| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A formula for the calculation of the sputtering yield of polycrystalline material
|
|
|
1985
|
35 |
8 |
p. 331-
1 p.
|
artikel
|
| 2 |
A general review of synchrotron radiation, its uses and special technologies
|
|
|
1985
|
35 |
8 |
p. 332-
1 p.
|
artikel
|
| 3 |
A high-power polarized coherent TE N2 laser
|
|
|
1985
|
35 |
8 |
p. 328-
1 p.
|
artikel
|
| 4 |
A high resolution electron spectrometer facility for studying the spectra of microscopically localized field emission sites on planar cathodes
|
|
|
1985
|
35 |
8 |
p. 327-
1 p.
|
artikel
|
| 5 |
A high stability low cost film thickness monitor
|
Nyaiesh, AR
|
|
1985
|
35 |
8 |
p. 325-326
2 p.
|
artikel
|
| 6 |
Al alloy-ceramic ultrahigh vacuum and cryogenic feedthrough useful from dc to 6.5 GHz
|
|
|
1985
|
35 |
8 |
p. 329-
1 p.
|
artikel
|
| 7 |
A miniature scanning electron microscope for investigation of the interior surface of a superconducting Nb radiofrequency accelerating cavity
|
|
|
1985
|
35 |
8 |
p. 345-
1 p.
|
artikel
|
| 8 |
A molecular dynamics study of irradiation damage in rutile, TiO2
|
|
|
1985
|
35 |
8 |
p. 343-
1 p.
|
artikel
|
| 9 |
A multibeam scheme for electron-beam lithography
|
|
|
1985
|
35 |
8 |
p. 343-
1 p.
|
artikel
|
| 10 |
Analysis of surface structures and of size and shape variations in ionitrided precipitation hardening stainless steel samples
|
Tesi, B
|
|
1985
|
35 |
8 |
p. 307-314
8 p.
|
artikel
|
| 11 |
Analytical model for low-pressure gas discharges: application to the Hg+;Ar discharge
|
|
|
1985
|
35 |
8 |
p. 334-
1 p.
|
artikel
|
| 12 |
An automatic thin-film thickness indicator implemented with a Z-80 microcomputer
|
|
|
1985
|
35 |
8 |
p. 330-
1 p.
|
artikel
|
| 13 |
An e-beam microfabrication system for nanolithography
|
|
|
1985
|
35 |
8 |
p. 344-
1 p.
|
artikel
|
| 14 |
An electron-beam/optical-hybrid lithography approach to submicrometer electronic devices
|
|
|
1985
|
35 |
8 |
p. 344-
1 p.
|
artikel
|
| 15 |
Angular distributions and sputtering yield of Al and Al2O3 during 40 keV argon ion bombardment
|
|
|
1985
|
35 |
8 |
p. 336-
1 p.
|
artikel
|
| 16 |
Annealing and light induced changes in the field effect conductance of amorphous silicon
|
|
|
1985
|
35 |
8 |
p. 341-
1 p.
|
artikel
|
| 17 |
Anode surface temperature and spot formation model for the vacuum arc
|
|
|
1985
|
35 |
8 |
p. 332-
1 p.
|
artikel
|
| 18 |
A quantitative account of the mechanisms of the positive column HeCd+ laser (441.6 mm)
|
|
|
1985
|
35 |
8 |
p. 328-
1 p.
|
artikel
|
| 19 |
A secondary electron detector for scanning electron microscopy of irradiated nuclear fuel
|
|
|
1985
|
35 |
8 |
p. 346-
1 p.
|
artikel
|
| 20 |
A simple model for the lowest excited states of α-CO/W (100): application to electron stimulated desorption
|
|
|
1985
|
35 |
8 |
p. 327-
1 p.
|
artikel
|
| 21 |
Assessment of the extent of atomic mixing from sputtering experiments
|
|
|
1985
|
35 |
8 |
p. 331-
1 p.
|
artikel
|
| 22 |
A study of defects in amorphous silicon films
|
|
|
1985
|
35 |
8 |
p. 333-
1 p.
|
artikel
|
| 23 |
A study of the sputtering of copper-nickel using a combination of techniques
|
|
|
1985
|
35 |
8 |
p. 331-
1 p.
|
artikel
|
| 24 |
A tensile testing machine for evaporated thin metal films
|
|
|
1985
|
35 |
8 |
p. 330-
1 p.
|
artikel
|
| 25 |
Cathodoluminescence studies of post-range defect introduction from ion implantation in CdSe
|
|
|
1985
|
35 |
8 |
p. 341-
1 p.
|
artikel
|
| 26 |
Channeling measurements of lattice disorder at the GaAsInAs (100) heterojunction
|
|
|
1985
|
35 |
8 |
p. 334-
1 p.
|
artikel
|
| 27 |
Characterization and annealing behavior of drop levels in CdTe epitaxial layers
|
|
|
1985
|
35 |
8 |
p. 341-
1 p.
|
artikel
|
| 28 |
Chlorine and hydrogen chloride on clean and oxygen-covered Fe (100): Bonding and reactions
|
|
|
1985
|
35 |
8 |
p. 346-
1 p.
|
artikel
|
| 29 |
Compensation mechanisms related to boron implantation in GaAs
|
|
|
1985
|
35 |
8 |
p. 340-
1 p.
|
artikel
|
| 30 |
Competing ambient effects on the interdiffusion in Pt/Ni Al films
|
|
|
1985
|
35 |
8 |
p. 339-
1 p.
|
artikel
|
| 31 |
Competing processes of Si molecular beam reactive etching and simultaneous deposition on film and bulk SiO2
|
|
|
1985
|
35 |
8 |
p. 339-
1 p.
|
artikel
|
| 32 |
Continuous-wave laser fluorescence spectroscopy of impurities in tokamaks
|
|
|
1985
|
35 |
8 |
p. 334-
1 p.
|
artikel
|
| 33 |
Cryopump regeneration studies
|
|
|
1985
|
35 |
8 |
p. 328-
1 p.
|
artikel
|
| 34 |
Crystalline aspects of impurity generated sputter cones
|
|
|
1985
|
35 |
8 |
p. 330-
1 p.
|
artikel
|
| 35 |
cw-laser annealed solar cells
|
|
|
1985
|
35 |
8 |
p. 339-
1 p.
|
artikel
|
| 36 |
Daytime E-region ion and nitric oxide densities
|
|
|
1985
|
35 |
8 |
p. 335-
1 p.
|
artikel
|
| 37 |
Density perturbations induced by a discharge in a laser cavity
|
|
|
1985
|
35 |
8 |
p. 328-
1 p.
|
artikel
|
| 38 |
Deposition and properties of optical oxide coatings from polymerized solutions
|
|
|
1985
|
35 |
8 |
p. 330-
1 p.
|
artikel
|
| 39 |
Depth distribution of ion-implanted argon in gadolinium and samarium films
|
|
|
1985
|
35 |
8 |
p. 338-
1 p.
|
artikel
|
| 40 |
Design of an electrostatic ion optical system for microfabrication with 100 Å resolution
|
|
|
1985
|
35 |
8 |
p. 343-
1 p.
|
artikel
|
| 41 |
Determination of atmospheric aerosol particle size distribution and visibility using a mobile laboratory
|
|
|
1985
|
35 |
8 |
p. 335-
1 p.
|
artikel
|
| 42 |
Determination of effective surface recombination velocity and minority-carrier lifetime in high-efficiency Si solar cells
|
|
|
1985
|
35 |
8 |
p. 340-
1 p.
|
artikel
|
| 43 |
Deuterium trapping by impurities in copper
|
|
|
1985
|
35 |
8 |
p. 337-
1 p.
|
artikel
|
| 44 |
Developments in broad-beam, ion source technology and applications
|
|
|
1985
|
35 |
8 |
p. 343-
1 p.
|
artikel
|
| 45 |
Diffusion of Au into Sn thin films studied by the attenuated total reflection method
|
|
|
1985
|
35 |
8 |
p. 339-
1 p.
|
artikel
|
| 46 |
Diffusion of oxygen in silicon
|
|
|
1985
|
35 |
8 |
p. 339-
1 p.
|
artikel
|
| 47 |
Distribution of ionisation fractions in irradiated targets
|
|
|
1985
|
35 |
8 |
p. 343-
1 p.
|
artikel
|
| 48 |
Dynamic properties of charged walls in ion implanted garnets
|
|
|
1985
|
35 |
8 |
p. 338-
1 p.
|
artikel
|
| 49 |
Editorial: Software survey section
|
Colligon, John S
|
|
1985
|
35 |
8 |
p. I-IV
nvt p.
|
artikel
|
| 50 |
e+e-→+heavy lepton by one photon exchange
|
|
|
1985
|
35 |
8 |
p. 334-
1 p.
|
artikel
|
| 51 |
Effect of heating on the electrical and optical properties of tin disulphide thin films
|
|
|
1985
|
35 |
8 |
p. 330-
1 p.
|
artikel
|
| 52 |
Effect of hydrogen on the deposition rate for planar rf magnetron sputtering of hydrogenated amorphous silicon
|
|
|
1985
|
35 |
8 |
p. 331-
1 p.
|
artikel
|
| 53 |
Effect of substrate temperature on SnTe films
|
|
|
1985
|
35 |
8 |
p. 330-
1 p.
|
artikel
|
| 54 |
Effects of various encapsulating films on laser recrystallization of silicon on SiO2
|
|
|
1985
|
35 |
8 |
p. 340-
1 p.
|
artikel
|
| 55 |
Electrical and structural properties of p-n junctions in cw laser annealed silicon
|
|
|
1985
|
35 |
8 |
p. 337-
1 p.
|
artikel
|
| 56 |
Electrical properties and grain size of phosphorus in situ doped and cw laser annealed polycrystalline silicon films
|
|
|
1985
|
35 |
8 |
p. 341-
1 p.
|
artikel
|
| 57 |
Electron-beam array lithography stitching experiments
|
|
|
1985
|
35 |
8 |
p. 344-
1 p.
|
artikel
|
| 58 |
Electron-beam fabrication of a 1.25 μm, 16-bit I 2 Lmuprocessor
|
|
|
1985
|
35 |
8 |
p. 344-
1 p.
|
artikel
|
| 59 |
Electron beam lithography
|
|
|
1985
|
35 |
8 |
p. 336-
1 p.
|
artikel
|
| 60 |
Electron stimulated desorption of excited alkali atoms from alkali halide surfaces
|
|
|
1985
|
35 |
8 |
p. 337-
1 p.
|
artikel
|
| 61 |
Energy consumption and the ability to obtain UHV using a Diffstak diffusion pump
|
|
|
1985
|
35 |
8 |
p. 327-
1 p.
|
artikel
|
| 62 |
Evaluation of a glass epoxy for vacuum applications
|
Santhanam, Jayalaksmi
|
|
1985
|
35 |
8 |
p. 321-323
3 p.
|
artikel
|
| 63 |
Experimental investigation of flow characteristics and thermal accomodation in neutralizer gas cells
|
|
|
1985
|
35 |
8 |
p. 327-
1 p.
|
artikel
|
| 64 |
Experimental investigation of flow characteristics and thermal through a tube under free molecular conditions
|
|
|
1985
|
35 |
8 |
p. 327-
1 p.
|
artikel
|
| 65 |
Experimental investigation of the amorphous silicon melting temperature by fast heating process
|
|
|
1985
|
35 |
8 |
p. 340-
1 p.
|
artikel
|
| 66 |
Experimental performance of an open structure cryopump
|
|
|
1985
|
35 |
8 |
p. 329-
1 p.
|
artikel
|
| 67 |
Experimental support for a Gomer-type escape mechanism and heavy-ion tunnelling in field evaporation
|
|
|
1985
|
35 |
8 |
p. 330-
1 p.
|
artikel
|
| 68 |
Experimental validation of the solar aureole technique for determining aerosol size distributions
|
|
|
1985
|
35 |
8 |
p. 335-
1 p.
|
artikel
|
| 69 |
Expitaxial regrowth of (100) InP layers amorphized by ion implantation at room temperature
|
|
|
1985
|
35 |
8 |
p. 338-
1 p.
|
artikel
|
| 70 |
Expitaxial regrowth of intrinsic, 31P-doped and compensated (31P + 11B-doped) amorphous Si
|
|
|
1985
|
35 |
8 |
p. 338-
1 p.
|
artikel
|
| 71 |
Factors determining the compound phases formed by oxygen or nitrogen implantation in metals
|
|
|
1985
|
35 |
8 |
p. 337-
1 p.
|
artikel
|
| 72 |
FET fabrication using maskless ion implantation
|
|
|
1985
|
35 |
8 |
p. 336-
1 p.
|
artikel
|
| 73 |
Field ion microscopy and pulsed laser atom-probe mass spectroscopy of insulating glasses
|
|
|
1985
|
35 |
8 |
p. 345-
1 p.
|
artikel
|
| 74 |
Forbidden line emission from highly ionized atoms in tokamak plasmas
|
|
|
1985
|
35 |
8 |
p. 333-
1 p.
|
artikel
|
| 75 |
Formation and Schottky behavior of manganese silicides on n -type silicon
|
|
|
1985
|
35 |
8 |
p. 339-
1 p.
|
artikel
|
| 76 |
Formation of droplets on Si surfaces bombarded by In from a capillary type liquid metal ion source
|
Rüdenauer, FG
|
|
1985
|
35 |
8 |
p. 315-320
6 p.
|
artikel
|
| 77 |
Growth of autectic thin film structures
|
|
|
1985
|
35 |
8 |
p. 337-
1 p.
|
artikel
|
| 78 |
Guidelines for construction of low-pressure gas manifolds
|
|
|
1985
|
35 |
8 |
p. 329-
1 p.
|
artikel
|
| 79 |
Heat-treatment studies on thin-film CdS/Cu x S solar cells
|
|
|
1985
|
35 |
8 |
p. 340-
1 p.
|
artikel
|
| 80 |
Height and slope distributions for surfaces of rough metallic deposits
|
|
|
1985
|
35 |
8 |
p. 330-
1 p.
|
artikel
|
| 81 |
High-efficiency high-energy flashlamp-pumped dye laser
|
|
|
1985
|
35 |
8 |
p. 328-
1 p.
|
artikel
|
| 82 |
High-resolution electron microscopy of electron irradiation damage in apatite
|
|
|
1985
|
35 |
8 |
p. 346-
1 p.
|
artikel
|
| 83 |
High-temperature annealing effects on tin oxide films
|
|
|
1985
|
35 |
8 |
p. 342-
1 p.
|
artikel
|
| 84 |
High-voltage double layers in a magnetised plasma column
|
|
|
1985
|
35 |
8 |
p. 335-
1 p.
|
artikel
|
| 85 |
Hydrogen content of a variety of plasma-deposited silicon nitrides
|
|
|
1985
|
35 |
8 |
p. 337-
1 p.
|
artikel
|
| 86 |
Ideal and relaxed surfaces of SiC
|
|
|
1985
|
35 |
8 |
p. 346-
1 p.
|
artikel
|
| 87 |
Impurity and defect levels in beryllium-doped GaAs grown by molecular beam epitaxy
|
|
|
1985
|
35 |
8 |
p. 338-
1 p.
|
artikel
|
| 88 |
Indirect plasma deposition of silicon dioxide
|
|
|
1985
|
35 |
8 |
p. 330-
1 p.
|
artikel
|
| 89 |
Indium antimonide-bismuth compositions grown by molecular beam epitaxy
|
|
|
1985
|
35 |
8 |
p. 341-
1 p.
|
artikel
|
| 90 |
Influence of buffer thickness on the performance of GaAs field effect transistors prepared by molecular beam epitaxy
|
|
|
1985
|
35 |
8 |
p. 342-
1 p.
|
artikel
|
| 91 |
Infrared interferometric analysis of thin films and optical surfaces
|
|
|
1985
|
35 |
8 |
p. 346-
1 p.
|
artikel
|
| 92 |
Infrared optogalvanic measurements on helium and helium-hydrogen discharges
|
|
|
1985
|
35 |
8 |
p. 328-
1 p.
|
artikel
|
| 93 |
Interactions of residual gases with a barium getter film as measured by AES and XPS
|
|
|
1985
|
35 |
8 |
p. 345-
1 p.
|
artikel
|
| 94 |
Interface structures during solid-phase-epitaxial growth in ion-implanted semiconductors and a crystallization model
|
|
|
1985
|
35 |
8 |
p. 339-
1 p.
|
artikel
|
| 95 |
Investigations of holes machined by laser beam on Al and Cr thin films
|
|
|
1985
|
35 |
8 |
p. 336-
1 p.
|
artikel
|
| 96 |
Ion beam exposure characteristics of resists: Experimental results
|
|
|
1985
|
35 |
8 |
p. 338-
1 p.
|
artikel
|
| 97 |
Ion-beam-induced metastable Pt2Si3 phase. III. Structure and diffusion in amorphous Pt2Si3
|
|
|
1985
|
35 |
8 |
p. 339-
1 p.
|
artikel
|
| 98 |
Ion-beam-induced topography and surface diffusion
|
|
|
1985
|
35 |
8 |
p. 331-
1 p.
|
artikel
|
| 99 |
Ion beam joining technique
|
|
|
1985
|
35 |
8 |
p. 343-
1 p.
|
artikel
|
| 100 |
Ion extraction from a plasma through a conical orifice
|
|
|
1985
|
35 |
8 |
p. 345-
1 p.
|
artikel
|
| 101 |
Ion-extraction performance of the circular magnetic-multipole bucket ion source applied for the neutral beam injection system of the Heliotron E machine
|
|
|
1985
|
35 |
8 |
p. 345-
1 p.
|
artikel
|
| 102 |
Ion implanted metastable surface alloys in vanadium
|
|
|
1985
|
35 |
8 |
p. 343-
1 p.
|
artikel
|
| 103 |
Ion saturation current density and specific heat flux on a cynlinder probe immersed in a dense plasma
|
|
|
1985
|
35 |
8 |
p. 335-
1 p.
|
artikel
|
| 104 |
Ion-surface interactions during vapor phase crystal growth by sputtering, MBE, and plasma-enhanced CVD: Applications to semiconductors
|
|
|
1985
|
35 |
8 |
p. 346-
1 p.
|
artikel
|
| 105 |
Kinetics and mechanisms of chemical reactions in nonequilibrium-plasma etching of silicon and silicon compounds
|
|
|
1985
|
35 |
8 |
p. 343-
1 p.
|
artikel
|
| 106 |
Large cross-section pulsed TEA-CO2 interferometer for plasma diagnostics
|
|
|
1985
|
35 |
8 |
p. 334-
1 p.
|
artikel
|
| 107 |
Large grain CdTe thin films on SbBi alloy-coated Ta substrates
|
|
|
1985
|
35 |
8 |
p. 342-
1 p.
|
artikel
|
| 108 |
Large turbomolecular pumps for fusion research and high-energy physics
|
|
|
1985
|
35 |
8 |
p. 328-
1 p.
|
artikel
|
| 109 |
Laser beam power fade induced by system and atmospheric effects
|
|
|
1985
|
35 |
8 |
p. 336-
1 p.
|
artikel
|
| 110 |
Laser-generated electron emission from surfaces: Effect of the pulse shape on temperature and transient phenomena
|
|
|
1985
|
35 |
8 |
p. 327-
1 p.
|
artikel
|
| 111 |
Laser magnetic resonance of metastable krypton and xenon atoms
|
|
|
1985
|
35 |
8 |
p. 332-
1 p.
|
artikel
|
| 112 |
Level's population and Kumakhov radiation for planar-channeled MEV electrons
|
|
|
1985
|
35 |
8 |
p. 335-
1 p.
|
artikel
|
| 113 |
Long term impurity deposition on the first wall of doublet III
|
|
|
1985
|
35 |
8 |
p. 337-
1 p.
|
artikel
|
| 114 |
Masked ion-beam litography: A feasibility demonstration for submicrometer device fabrication
|
|
|
1985
|
35 |
8 |
p. 336-
1 p.
|
artikel
|
| 115 |
Measurement of the ionisation and attachment coefficients in SF6 and air mixtures
|
|
|
1985
|
35 |
8 |
p. 334-
1 p.
|
artikel
|
| 116 |
Measurements of the magnification behaviour of some three-element electrostatic lenses
|
|
|
1985
|
35 |
8 |
p. 344-
1 p.
|
artikel
|
| 117 |
Methods of pumping speed and gas release measurement in ionization gauge heads—A review
|
|
|
1985
|
35 |
8 |
p. 329-
1 p.
|
artikel
|
| 118 |
Modelling ion beam milling
|
|
|
1985
|
35 |
8 |
p. 342-
1 p.
|
artikel
|
| 119 |
Model of bias sputtering in a dc-triode configuration applied to the production of Pd films
|
|
|
1985
|
35 |
8 |
p. 331-
1 p.
|
artikel
|
| 120 |
Motional side-band resonances in the microwave spectrum of stored ions
|
|
|
1985
|
35 |
8 |
p. 333-
1 p.
|
artikel
|
| 121 |
Neutral particle diagnostics for ohmically and auxiliary heated tokamaks
|
|
|
1985
|
35 |
8 |
p. 333-
1 p.
|
artikel
|
| 122 |
New operation mode of a microchannel plate for the detection of low-energy positive ions
|
|
|
1985
|
35 |
8 |
p. 328-
1 p.
|
artikel
|
| 123 |
New technique for measuring win velocity
|
|
|
1985
|
35 |
8 |
p. 335-
1 p.
|
artikel
|
| 124 |
NiSi formation at the silicide/Si interface on the NiPt/Si system
|
|
|
1985
|
35 |
8 |
p. 341-
1 p.
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artikel
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| 125 |
NMR study of magnetic doped semiconducting (SnTe)100−x (MnTe) x compounds
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1985
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p. 334-
1 p.
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artikel
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| 126 |
On gaseous sodium halide dimers
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1985
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35 |
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p. 333-
1 p.
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artikel
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| 127 |
On magnetic shielding in hydrogen masers
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1985
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35 |
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p. 328-
1 p.
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artikel
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| 128 |
On the determination of particle concentrations in multitemperature plasmas
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1985
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35 |
8 |
p. 333-
1 p.
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artikel
|
| 129 |
Operational aspects of a gallium phosphide source of P2 vapor in molecular beam epitaxy
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1985
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35 |
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p. 336-
1 p.
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artikel
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| 130 |
Phase transitions in compound semiconductor films triggered by laser irradiation
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1985
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35 |
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p. 342-
1 p.
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artikel
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| 131 |
Photoluminescence of undoped In0.53 Ga0.47As/InP grown by the vapor phase epitaxy technique
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1985
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p. 341-
1 p.
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artikel
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| 132 |
Plasma-enhanced chemical vapor deposited SiO2/InP interface
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1985
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p. 337-
1 p.
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artikel
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| 133 |
Plasma expulsion from the plasma jet igniter
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1985
|
35 |
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p. 344-
1 p.
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artikel
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| 134 |
Plasma kinetic effects of nitrogen and hydrogen addition to carbon monoxide laser discharges
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1985
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35 |
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p. 334-
1 p.
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artikel
|
| 135 |
Pressure concentrations due to plastic deformation of thin films or gaskets between anvils
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1985
|
35 |
8 |
p. 332-
1 p.
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artikel
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| 136 |
Problems in monitoring partial pressures in industrial vacuum plant
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1985
|
35 |
8 |
p. 329-
1 p.
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artikel
|
| 137 |
Pulsed laser heating of silicon: The coupling of optical absorption and thermal conduction during irradiation
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1985
|
35 |
8 |
p. 340-
1 p.
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artikel
|
| 138 |
Pulse-laser-induced supersaturation of indium and antimony in germanium
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1985
|
35 |
8 |
p. 339-
1 p.
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artikel
|
| 139 |
Reactions of atomic hydrogen in the deposition of hydrogenated amorphous silicon by glow discharge and reactive sputtering
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1985
|
35 |
8 |
p. 331-
1 p.
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artikel
|
| 140 |
Reactive ion etching of aluminium using SiCl4
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1985
|
35 |
8 |
p. 331-
1 p.
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artikel
|
| 141 |
Recent developments in cryopumping
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1985
|
35 |
8 |
p. 328-
1 p.
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artikel
|
| 142 |
Reducing the grain size of polycrystalline lead films by the use of nucleants
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1985
|
35 |
8 |
p. 341-
1 p.
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artikel
|
| 143 |
Reduction of the impurity concentration of an intense hydrogen ion beam
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1985
|
35 |
8 |
p. 345-
1 p.
|
artikel
|
| 144 |
Resonant contributions to the cross section for electron stimulated desorption of neutral particles from adsorbates
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|
1985
|
35 |
8 |
p. 333-
1 p.
|
artikel
|
| 145 |
RIE of SiO2 in doped and undoped fluorocarbon plasmas
|
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1985
|
35 |
8 |
p. 332-
1 p.
|
artikel
|
| 146 |
Scattered electron counting system for nozzle beam studies of small clusters
|
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|
1985
|
35 |
8 |
p. 332-
1 p.
|
artikel
|
| 147 |
Si incorporation in Al x Ga1−x As grown by molecular beam epitaxy
|
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|
1985
|
35 |
8 |
p. 342-
1 p.
|
artikel
|
| 148 |
Similarity in interactions between metal-semiconductor and metal-metal interfaces
|
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1985
|
35 |
8 |
p. 342-
1 p.
|
artikel
|
| 149 |
Simulation of high-voltage breakdown in the post-arc column
|
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|
1985
|
35 |
8 |
p. 334-
1 p.
|
artikel
|
| 150 |
Simulation of plasma-assisted etching processed by ion-beam techniques
|
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1985
|
35 |
8 |
p. 336-
1 p.
|
artikel
|
| 151 |
Specimen manipulators for high resolution in ultra-high vacuum
|
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|
1985
|
35 |
8 |
p. 329-
1 p.
|
artikel
|
| 152 |
Spinning rotor vacuum gauges
|
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1985
|
35 |
8 |
p. 329-
1 p.
|
artikel
|
| 153 |
Stability of glow discharge
|
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1985
|
35 |
8 |
p. 332-
1 p.
|
artikel
|
| 154 |
Stoichiometry determination of reactively sputtered titanium-silicide
|
|
|
1985
|
35 |
8 |
p. 332-
1 p.
|
artikel
|
| 155 |
Stopping ratios for 30–330 keV ions with 1 ⩽Z 1⩽5
|
|
|
1985
|
35 |
8 |
p. 333-
1 p.
|
artikel
|
| 156 |
Structural studies of Schottky barrier formation by means of surface EXAFS: Pd and AG on Si(111) 7 × 7
|
|
|
1985
|
35 |
8 |
p. 346-
1 p.
|
artikel
|
| 157 |
Structural study of alloyed gold metallization contacts on InGaAsP/InP layers
|
|
|
1985
|
35 |
8 |
p. 339-
1 p.
|
artikel
|
| 158 |
Studies of a glow discharge electron beam
|
|
|
1985
|
35 |
8 |
p. 344-
1 p.
|
artikel
|
| 159 |
Studies of current-voltage characteristics of antimony oxide films
|
|
|
1985
|
35 |
8 |
p. 343-
1 p.
|
artikel
|
| 160 |
Surface composition of a tin lead alloy
|
|
|
1985
|
35 |
8 |
p. 345-
1 p.
|
artikel
|
| 161 |
System related impurity incorporation during the growth of gallium arsenide by molecular beam epitaxy
|
|
|
1985
|
35 |
8 |
p. 343-
1 p.
|
artikel
|
| 162 |
Techniques for the correction of topographical effects in scanning Auger electron microscopy
|
|
|
1985
|
35 |
8 |
p. 345-
1 p.
|
artikel
|
| 163 |
Technology and applications of broad-beam ion sources used in sputtering. Part I. Ion source technology
|
|
|
1985
|
35 |
8 |
p. 343-
1 p.
|
artikel
|
| 164 |
Tellurium and iodine in silicon part II: Hall effect and resistivity measurements on ion implanted silicon
|
|
|
1985
|
35 |
8 |
p. 335-
1 p.
|
artikel
|
| 165 |
Testing of a field electron energy analyser
|
|
|
1985
|
35 |
8 |
p. 344-
1 p.
|
artikel
|
| 166 |
The behavior of boron (also arsenic) in bilayers of polycrystalline silicon and tungsten disilicide
|
|
|
1985
|
35 |
8 |
p. 339-
1 p.
|
artikel
|
| 167 |
The behaviour of uranium oxides in low partial pressures of O2 Studied using X-ray photoelectron spectroscopy
|
|
|
1985
|
35 |
8 |
p. 346-
1 p.
|
artikel
|
| 168 |
The dynamics of imploding argon plasmas
|
|
|
1985
|
35 |
8 |
p. 332-
1 p.
|
artikel
|
| 169 |
The effect of implantation on explosively crystallized a-Si
|
|
|
1985
|
35 |
8 |
p. 340-
1 p.
|
artikel
|
| 170 |
The effect of the atomic incident angle upon the microstructure of thick beryllium deposits produced by physical vapor deposition
|
|
|
1985
|
35 |
8 |
p. 330-
1 p.
|
artikel
|
| 171 |
The effect of the inlet valve on the ultimate vacua above integrated pumping groups
|
|
|
1985
|
35 |
8 |
p. 329-
1 p.
|
artikel
|
| 172 |
The electrical resistivity of thin metal films with unlike surfaces
|
|
|
1985
|
35 |
8 |
p. 329-
1 p.
|
artikel
|
| 173 |
The erosion energy efficiency of sputtering
|
|
|
1985
|
35 |
8 |
p. 331-
1 p.
|
artikel
|
| 174 |
The existence of an electron shock structure in the electrical breakdown of nitrogen
|
|
|
1985
|
35 |
8 |
p. 332-
1 p.
|
artikel
|
| 175 |
The Ferranti oscillogyro: a miniature vacuum system
|
|
|
1985
|
35 |
8 |
p. 328-
1 p.
|
artikel
|
| 176 |
The growth of a GaP epilayer on Si substrates by metallorganic CVD
|
|
|
1985
|
35 |
8 |
p. 342-
1 p.
|
artikel
|
| 177 |
The growth of Cd x Hg1−x Te using organometallics
|
|
|
1985
|
35 |
8 |
p. 337-
1 p.
|
artikel
|
| 178 |
The influence of charge transfer on ion probe measurements of laser-produced plasmas
|
|
|
1985
|
35 |
8 |
p. 335-
1 p.
|
artikel
|
| 179 |
The mechanism of the enhancement in divacancy production by oxygen during electron irradiation of silicon. I. Experimental
|
|
|
1985
|
35 |
8 |
p. 340-
1 p.
|
artikel
|
| 180 |
The N-P final state interaction in the 2H(d,np)2H reaction at 12 MeV
|
|
|
1985
|
35 |
8 |
p. 334-
1 p.
|
artikel
|
| 181 |
Theoretical and experimental study of high fluence germanium implantation into silicon. Contribution of atomic mixing
|
|
|
1985
|
35 |
8 |
p. 343-
1 p.
|
artikel
|
| 182 |
Theory of hydrogen chemisorption on ferromagnets
|
|
|
1985
|
35 |
8 |
p. 338-
1 p.
|
artikel
|
| 183 |
The preparation and characterization of transition metal nitride films
|
|
|
1985
|
35 |
8 |
p. 345-
1 p.
|
artikel
|
| 184 |
The ratio of the single and double scattering intensities in ion scattering spectroscopy as a quantitative measure of surface structures
|
|
|
1985
|
35 |
8 |
p. 345-
1 p.
|
artikel
|
| 185 |
The relation between the conductance of an elbow and the angle between the tubes
|
|
|
1985
|
35 |
8 |
p. 327-
1 p.
|
artikel
|
| 186 |
The relationship between vacuum and atomic collisions in solids
|
|
|
1985
|
35 |
8 |
p. 345-
1 p.
|
artikel
|
| 187 |
Thermal removal of surface carbon from GaAs substrate used in molecular beam epitaxy
|
|
|
1985
|
35 |
8 |
p. 342-
1 p.
|
artikel
|
| 188 |
The velocity dependency of fast heavy-ion induced desorption of biomolecules
|
|
|
1985
|
35 |
8 |
p. 336-
1 p.
|
artikel
|
| 189 |
Two-dimensional fluid simultations of non-uniformly iradiated targets for inertial confinement fusion
|
|
|
1985
|
35 |
8 |
p. 335-
1 p.
|
artikel
|
| 190 |
uv laser triggering of high-voltage gas switches
|
|
|
1985
|
35 |
8 |
p. 328-
1 p.
|
artikel
|
| 191 |
Vacuum deposition of high quality metal films on porous substrates
|
|
|
1985
|
35 |
8 |
p. 330-
1 p.
|
artikel
|
| 192 |
Vibrational temperature in a weakly ionised steady-state nitrogen discharge plasma
|
|
|
1985
|
35 |
8 |
p. 334-
1 p.
|
artikel
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