nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
Accuracy of optical angle estimator operating through the turbulent atmosphere
|
|
|
1985 |
35 |
6 |
p. 231- 1 p. |
artikel |
2 |
A copact humidity test cabinet
|
|
|
1985 |
35 |
6 |
p. 243- 1 p. |
artikel |
3 |
Acoustic phenomena associated with a TEA laser discharge
|
|
|
1985 |
35 |
6 |
p. 223- 1 p. |
artikel |
4 |
A fail-safe automatic vent control for Pfeiffer turbomolecular pumps
|
|
|
1985 |
35 |
6 |
p. 224- 1 p. |
artikel |
5 |
A high-current, high speed electron beam lithography column
|
|
|
1985 |
35 |
6 |
p. 239- 1 p. |
artikel |
6 |
A high-density effusive target of atomic hydrogen
|
|
|
1985 |
35 |
6 |
p. 224- 1 p. |
artikel |
7 |
A high speed electrton beam lithography system.
|
|
|
1985 |
35 |
6 |
p. 239-240 2 p. |
artikel |
8 |
A mechanical booster for pumping radioactive and other dangerous gases
|
|
|
1985 |
35 |
6 |
p. 225- 1 p. |
artikel |
9 |
A method to reduce deflection aberrations in electron-beam lithography systems.
|
|
|
1985 |
35 |
6 |
p. 239- 1 p. |
artikel |
10 |
A multichannel flash tube implemented for large area annealing of ion implanted semiconductors
|
|
|
1985 |
35 |
6 |
p. 238- 1 p. |
artikel |
11 |
An analytical approach for calculating vacuum properties of outgassing tubing systems
|
|
|
1985 |
35 |
6 |
p. 223- 1 p. |
artikel |
12 |
An atomic-beam set-up for 0.5 MHz absolute frequency stabilisation of a single-mode cw dye laser
|
|
|
1985 |
35 |
6 |
p. 224- 1 p. |
artikel |
13 |
A new empirical formula for the sputtering yield
|
|
|
1985 |
35 |
6 |
p. 227- 1 p. |
artikel |
14 |
A new range of rotary vane vacuum pumps
|
|
|
1985 |
35 |
6 |
p. 244- 1 p. |
artikel |
15 |
A new technique for studying ion conversion and detachment reactions in oxygen and in O2/SO2 and O2/N2 mixtures
|
|
|
1985 |
35 |
6 |
p. 230- 1 p. |
artikel |
16 |
Annealing effects in tunnel junctions (voltage annealing with alternating polarity)
|
|
|
1985 |
35 |
6 |
p. 236- 1 p. |
artikel |
17 |
Annealing of indium-implanted CdTe
|
|
|
1985 |
35 |
6 |
p. 237- 1 p. |
artikel |
18 |
An observation of a high heat flux in a laser-heated plasma
|
|
|
1985 |
35 |
6 |
p. 230- 1 p. |
artikel |
19 |
Anomalous diffusion in phosphorus implanted silicon
|
|
|
1985 |
35 |
6 |
p. 238- 1 p. |
artikel |
20 |
An O-ring sealed rotary feedthrough for uhv applications
|
|
|
1985 |
35 |
6 |
p. 225- 1 p. |
artikel |
21 |
An outline theory of surface morphology development during radiation enhanced reactant erosion
|
|
|
1985 |
35 |
6 |
p. 227- 1 p. |
artikel |
22 |
An XPS study of sputtered a-Si, GE alloys
|
|
|
1985 |
35 |
6 |
p. 241- 1 p. |
artikel |
23 |
A predictive model for specimen heating during ion plating
|
|
|
1985 |
35 |
6 |
p. 225- 1 p. |
artikel |
24 |
Arguments about emitter shape for liquid-metal field-ion emission source
|
|
|
1985 |
35 |
6 |
p. 240- 1 p. |
artikel |
25 |
A simplified hybrid detector for ion counting
|
|
|
1985 |
35 |
6 |
p. 223- 1 p. |
artikel |
26 |
A spin flipper for reversal of polarisation in a thermal atomic beam
|
|
|
1985 |
35 |
6 |
p. 240- 1 p. |
artikel |
27 |
A system for phase and intermittency measurements in periodically turbulent flows
|
|
|
1985 |
35 |
6 |
p. 223- 1 p. |
artikel |
28 |
A three-dimensional model for the transport properties of polycrystalline silicon
|
|
|
1985 |
35 |
6 |
p. 238- 1 p. |
artikel |
29 |
Atmospheric aerosols investigated by inversion of experimental transmittance data
|
|
|
1985 |
35 |
6 |
p. 231- 1 p. |
artikel |
30 |
Atmospheric ozone determination by solar occultation using the UV spectrometer on the Solar Maximum Mission
|
|
|
1985 |
35 |
6 |
p. 231- 1 p. |
artikel |
31 |
Auger and photoelectron line energy relationships in aluminium-oxygen and silicon-oxygen compounds
|
|
|
1985 |
35 |
6 |
p. 241- 1 p. |
artikel |
32 |
A versatile tetst rig fir the evaluation of thermionic elecrton guns
|
|
|
1985 |
35 |
6 |
p. 240- 1 p. |
artikel |
33 |
Backscattered UV radiation: effects of multiple scattering and the lower boundary of the atmosphere
|
|
|
1985 |
35 |
6 |
p. 231- 1 p. |
artikel |
34 |
Calculation of sparking potentials in industrially important insulating electronegative gases
|
|
|
1985 |
35 |
6 |
p. 227-228 2 p. |
artikel |
35 |
Calculation of the curren-voltage-pressure characteristics of dc diode sputtering discharges
|
|
|
1985 |
35 |
6 |
p. 226- 1 p. |
artikel |
36 |
Catalogues and leaflets from manufacturers
|
|
|
1985 |
35 |
6 |
p. 245- 1 p. |
artikel |
37 |
Characterisation of aluminium nitride layers formed directly by 700–800 keV 15N2
+ implantation into aluminium
|
|
|
1985 |
35 |
6 |
p. 238- 1 p. |
artikel |
38 |
Charged wall formation and propagation analysis in ion-implanted contiguous disk bubble devices
|
|
|
1985 |
35 |
6 |
p. 233- 1 p. |
artikel |
39 |
Chemical bonding at the Si-metal interface: SiNi and SiCr
|
|
|
1985 |
35 |
6 |
p. 237- 1 p. |
artikel |
40 |
Clustering and second-neighbor interactions in semiconductor alloys
|
|
|
1985 |
35 |
6 |
p. 237- 1 p. |
artikel |
41 |
CO2 laser annealing of silicon
|
|
|
1985 |
35 |
6 |
p. 233- 1 p. |
artikel |
42 |
Computer studies of trajectory focusing effects on total reflection coefficient and energy spectrum of reflected ions
|
|
|
1985 |
35 |
6 |
p. 240- 1 p. |
artikel |
43 |
Conditions of existence and axial structure of long microwave discharges sustained by travelling waves
|
|
|
1985 |
35 |
6 |
p. 230- 1 p. |
artikel |
44 |
1981 C R Burch prize-winning entry A new view of field evaporation
|
|
|
1985 |
35 |
6 |
p. 226- 1 p. |
artikel |
45 |
Cr needle crystals with fcc structure plasma from Cr(CO)6
|
|
|
1985 |
35 |
6 |
p. 241- 1 p. |
artikel |
46 |
Cross-section of the reaction 9
Be(γ, n) near threshold
|
|
|
1985 |
35 |
6 |
p. 229- 1 p. |
artikel |
47 |
Dark-ground illumination as a quantitative diagnostic for plasma density
|
|
|
1985 |
35 |
6 |
p. 230- 1 p. |
artikel |
48 |
Defects in hydrogenated amorphous silicon-carbon alloy films prepared by glow discharge decomposition and sputtering
|
|
|
1985 |
35 |
6 |
p. 226- 1 p. |
artikel |
49 |
DEKTAK IID software enhancements
|
|
|
1985 |
35 |
6 |
p. 244- 1 p. |
artikel |
50 |
Deposition of thin films by beam induced polymerization of divinyl benzene
|
|
|
1985 |
35 |
6 |
p. 227- 1 p. |
artikel |
51 |
Deposition rate dependence of the critical optimization temperature for thin film properties: Evidence for the disturbed area reevaporation mechanism
|
|
|
1985 |
35 |
6 |
p. 225- 1 p. |
artikel |
52 |
Design of a continuous guard ring and its application to swarm experiments
|
|
|
1985 |
35 |
6 |
p. 228- 1 p. |
artikel |
53 |
Determination of vertical ozone distributions by spacecraft measurements using a limb-scan technique
|
|
|
1985 |
35 |
6 |
p. 231- 1 p. |
artikel |
54 |
Development of laser diagnostic probes for chemical vapor deposition of InP/InGaAsP epitaxial layers
|
|
|
1985 |
35 |
6 |
p. 223- 1 p. |
artikel |
55 |
Diffusion of gallium in quartz and bulk-fused silica
|
|
|
1985 |
35 |
6 |
p. 232- 1 p. |
artikel |
56 |
Diffusion of substitutional impurities in silicon at short oxidation times: An insight into point defect kinetics
|
|
|
1985 |
35 |
6 |
p. 235- 1 p. |
artikel |
57 |
Diffusion of tellurium dopant in silicon
|
|
|
1985 |
35 |
6 |
p. 235- 1 p. |
artikel |
58 |
Dry development of ion beam exposed PMMA resist
|
|
|
1985 |
35 |
6 |
p. 237-238 2 p. |
artikel |
59 |
Editorial: Software survey section
|
|
|
1985 |
35 |
6 |
p. I-IV nvt p. |
artikel |
60 |
Effect of electronic excitations on laser heating of a stationary plasma
|
|
|
1985 |
35 |
6 |
p. 230- 1 p. |
artikel |
61 |
Effect of iodine on electrical conduction in polyvinyl fluoride films
|
|
|
1985 |
35 |
6 |
p. 226- 1 p. |
artikel |
62 |
Effect of irradiation on CsNO3, RbNO3 and NaNO2 crystal structure
|
|
|
1985 |
35 |
6 |
p. 232- 1 p. |
artikel |
63 |
Effects of ion-implantation-induced damages and impurity on platinum silicide formation
|
|
|
1985 |
35 |
6 |
p. 233- 1 p. |
artikel |
64 |
Electrical properties and their thermal stability for silicon nitride films prepared by plasma-enhanced deposition
|
|
|
1985 |
35 |
6 |
p. 235- 1 p. |
artikel |
65 |
Electroelastic effect in alpha quartz
|
|
|
1985 |
35 |
6 |
p. 236- 1 p. |
artikel |
66 |
Electron beam array lithography
|
|
|
1985 |
35 |
6 |
p. 239- 1 p. |
artikel |
67 |
Electron beam direct writing of capacitor coupled GaAs FET logic circuits
|
|
|
1985 |
35 |
6 |
p. 240- 1 p. |
artikel |
68 |
Electron beam induced heat flow transient in aluminium
|
|
|
1985 |
35 |
6 |
p. 238- 1 p. |
artikel |
69 |
Electron beam probe for charge neutralization studies of heavy ion beams
|
|
|
1985 |
35 |
6 |
p. 240- 1 p. |
artikel |
70 |
Electron irradiation effects in p-type GaAs
|
|
|
1985 |
35 |
6 |
p. 235-236 2 p. |
artikel |
71 |
Electron-stimulated desorption from hydrogen exposed palladium 〈100〉
|
|
|
1985 |
35 |
6 |
p. 233- 1 p. |
artikel |
72 |
Enhanced emission o positive cesium ions from zeolite
|
|
|
1985 |
35 |
6 |
p. 240- 1 p. |
artikel |
73 |
EPR studies of the annealing of damage produced by boron implantation of silicon single crystals
|
|
|
1985 |
35 |
6 |
p. 238- 1 p. |
artikel |
74 |
Excited atom emission from metals under ion bombardment
|
|
|
1985 |
35 |
6 |
p. 230- 1 p. |
artikel |
75 |
Experimental observations of cathode-spot surface phenomena in the transition from a vacuum metal-vapor arc to a nitrogen arc
|
|
|
1985 |
35 |
6 |
p. 229- 1 p. |
artikel |
76 |
Extraction of volume-produced H− ions from a multicusp source
|
|
|
1985 |
35 |
6 |
p. 240- 1 p. |
artikel |
77 |
Firts-principles determination of the structure of the Al/GaAs (110) surface
|
|
|
1985 |
35 |
6 |
p. 242- 1 p. |
artikel |
78 |
Form publishers
|
|
|
1985 |
35 |
6 |
p. 245- 1 p. |
artikel |
79 |
Fragment ion pattern coefficients of quadrupole mass spectrometers
|
|
|
1985 |
35 |
6 |
p. 225- 1 p. |
artikel |
80 |
Gauge factor measurements for fluorocarbon polymer-gold films
|
Thurstans, RE |
|
1985 |
35 |
6 |
p. 219-221 3 p. |
artikel |
81 |
General model of sodium desorption and diffusion during electron bombardment of glass
|
|
|
1985 |
35 |
6 |
p. 232-233 2 p. |
artikel |
82 |
Growth and dissolution kinetics of ternary III–V heterostructures formed by liquid-phase epitaxy. III. Effects of temperature of programming
|
|
|
1985 |
35 |
6 |
p. 237- 1 p. |
artikel |
83 |
Growth and surface properties of lanthanum hexaboride crystals
|
|
|
1985 |
35 |
6 |
p. 237- 1 p. |
artikel |
84 |
Helium bubble and blister formation for Ni and an amorphous FeNiMoB alloy during 5 keV implantation at 300 K
|
|
|
1985 |
35 |
6 |
p. 232- 1 p. |
artikel |
85 |
High rate deposition of uniformly thick wear-resistant films onto spherical surfaces
|
|
|
1985 |
35 |
6 |
p. 226- 1 p. |
artikel |
86 |
High resolution ion beam lithography
|
|
|
1985 |
35 |
6 |
p. 232- 1 p. |
artikel |
87 |
Hydrogenated amorphous silicon growth by CO2 laser photodissociation of silane
|
|
|
1985 |
35 |
6 |
p. 234-235 2 p. |
artikel |
88 |
Hydrogen evolution from a-C:H films
|
Nyaiesh, AR |
|
1985 |
35 |
6 |
p. 203-206 4 p. |
artikel |
89 |
Hydrogen plasma etching of semiconductors and their oxides
|
|
|
1985 |
35 |
6 |
p. 234- 1 p. |
artikel |
90 |
Implementation of adaptive process control to a dry etching process
|
|
|
1985 |
35 |
6 |
p. 234- 1 p. |
artikel |
91 |
Institute of physics vauum group annual report 1984/1985
|
|
|
1985 |
35 |
6 |
p. 245- 1 p. |
artikel |
92 |
Integrating sandwich: a new method of measurement of the light absorption coefficient for atmospheric particles
|
|
|
1985 |
35 |
6 |
p. 231- 1 p. |
artikel |
93 |
Interaction between chromium oxide and chromium silicide
|
|
|
1985 |
35 |
6 |
p. 236- 1 p. |
artikel |
94 |
Interfacial reactions between aluminium and transition-metal nitride and carbide films
|
|
|
1985 |
35 |
6 |
p. 234- 1 p. |
artikel |
95 |
Interfacial reactions between au and hydrogenated amorphous Si
|
|
|
1985 |
35 |
6 |
p. 241- 1 p. |
artikel |
96 |
Ion beam assisted etching for GaAs device applications
|
|
|
1985 |
35 |
6 |
p. 232- 1 p. |
artikel |
97 |
Ion beam sputter-deposited diamondlike films
|
|
|
1985 |
35 |
6 |
p. 226- 1 p. |
artikel |
98 |
Ion beam techniques for material modification
|
|
|
1985 |
35 |
6 |
p. 238- 1 p. |
artikel |
99 |
Ion energy-dependent electrical properties of sulfur implants in GaAs
|
|
|
1985 |
35 |
6 |
p. 234- 1 p. |
artikel |
100 |
Ion interaction with solids: Surface texturing, some bulk effects, and their possible applications
|
|
|
1985 |
35 |
6 |
p. 233-234 2 p. |
artikel |
101 |
Ionisation growth in gases in strong uniform electric fields
|
|
|
1985 |
35 |
6 |
p. 230- 1 p. |
artikel |
102 |
IPAT '85-largest ever conference on ion and plasma assisted technique-Munich 1985
|
|
|
1985 |
35 |
6 |
p. 245-246 2 p. |
artikel |
103 |
Laser annealing effects in ion-implanted GaAs
|
|
|
1985 |
35 |
6 |
p. 237- 1 p. |
artikel |
104 |
Laser-induced local heating of multilayers
|
|
|
1985 |
35 |
6 |
p. 238- 1 p. |
artikel |
105 |
Laser interferometry for the detemination of thickness distributions of low absorbing films and their spatial and thickness resolutions
|
|
|
1985 |
35 |
6 |
p. 242- 1 p. |
artikel |
106 |
Laser writing on silicon-metal bilayers for optical storage. II. Microscopic study
|
|
|
1985 |
35 |
6 |
p. 234- 1 p. |
artikel |
107 |
Lateral seeding epitaxy by cw Ar laser irradiation and by high temperature chemical vapor deposition technique
|
|
|
1985 |
35 |
6 |
p. 234- 1 p. |
artikel |
108 |
LEED intensity measurements by an improved Faraday cup collector
|
|
|
1985 |
35 |
6 |
p. 242- 1 p. |
artikel |
109 |
Low energy Ar+ ion sputtering of liquid and sodium indium
|
|
|
1985 |
35 |
6 |
p. 226- 1 p. |
artikel |
110 |
Low-energy distribution in an electron-beam-generated argon plasma
|
|
|
1985 |
35 |
6 |
p. 230- 1 p. |
artikel |
111 |
Low NPSH pump provides new concept in condensate recovery
|
|
|
1985 |
35 |
6 |
p. 244- 1 p. |
artikel |
112 |
Magnetic dipole infrared atmospheric oxygen bands
|
|
|
1985 |
35 |
6 |
p. 232- 1 p. |
artikel |
113 |
Manganese incorporation behavior in molecular beam epitaxial gallium arsenide
|
|
|
1985 |
35 |
6 |
p. 237- 1 p. |
artikel |
114 |
Mechanical stability of reactive ion-etched poly (methylmethacrylate) and polyimide microstructures in trilevel electron beam lithography
|
|
|
1985 |
35 |
6 |
p. 238- 1 p. |
artikel |
115 |
Metastable atom density in helium, neon and argon discharges
|
|
|
1985 |
35 |
6 |
p. 229- 1 p. |
artikel |
116 |
Metastable doping behavior in antimony-implanted (100) silicon
|
|
|
1985 |
35 |
6 |
p. 235- 1 p. |
artikel |
117 |
Meter measures uv dosage in medical treatments
|
|
|
1985 |
35 |
6 |
p. 243- 1 p. |
artikel |
118 |
Microcomputer control of thin alloy deposition
|
|
|
1985 |
35 |
6 |
p. 225- 1 p. |
artikel |
119 |
Modal compensation of atmospheric turbulence induced wave front aberrations
|
|
|
1985 |
35 |
6 |
p. 231- 1 p. |
artikel |
120 |
Model calculations of tunnelling and thermal evaporation rate constants relating to eveporation
|
|
|
1985 |
35 |
6 |
p. 226- 1 p. |
artikel |
121 |
Models of single crystal sputtering
|
|
|
1985 |
35 |
6 |
p. 227- 1 p. |
artikel |
122 |
Molecular beam epitaxial growth of InGaAIP on (100) GaAs
|
|
|
1985 |
35 |
6 |
p. 236-237 2 p. |
artikel |
123 |
Neutral particle emission from zinc oxide surface induced by high-density electronic excitation
|
|
|
1985 |
35 |
6 |
p. 227- 1 p. |
artikel |
124 |
New-generation CHN eleemental analyser
|
|
|
1985 |
35 |
6 |
p. 243-244 2 p. |
artikel |
125 |
New patents
|
|
|
1985 |
35 |
6 |
p. 247-254 8 p. |
artikel |
126 |
New turbomolecular pumps for application with radioactive gases, e.g. tritium
|
|
|
1985 |
35 |
6 |
p. 224- 1 p. |
artikel |
127 |
On the origin of adsorption stress in thin porous films
|
|
|
1985 |
35 |
6 |
p. 226- 1 p. |
artikel |
128 |
On the origin of Auger lineshape in heavy ion-light solid target collision
|
|
|
1985 |
35 |
6 |
p. 242- 1 p. |
artikel |
129 |
Operation of the quadrupole mass-spectrometer in the ac mode
|
|
|
1985 |
35 |
6 |
p. 224- 1 p. |
artikel |
130 |
Optical properties of transparent and infra-red-reflecting ITO films in the 0.2–50 μm range
|
Hamberg, I |
|
1985 |
35 |
6 |
p. 207-209 3 p. |
artikel |
131 |
Organic getter for tritium
|
|
|
1985 |
35 |
6 |
p. 234- 1 p. |
artikel |
132 |
Physical problems concerning effusion processes of semiconductors in molecular beam epitaxy
|
|
|
1985 |
35 |
6 |
p. 238- 1 p. |
artikel |
133 |
Physics and chemistry of semiconductor interfaces: Some future directions
|
|
|
1985 |
35 |
6 |
p. 237- 1 p. |
artikel |
134 |
Planar channeling of ions in compound semiconductor superlattices
|
|
|
1985 |
35 |
6 |
p. 229- 1 p. |
artikel |
135 |
Plasma analysis based on newly found similarities in the relative populations of excited states produced by sputtering and by electron impact
|
|
|
1985 |
35 |
6 |
p. 227- 1 p. |
artikel |
136 |
Plasma beam studies of Si and Al etching mechanisms
|
|
|
1985 |
35 |
6 |
p. 233- 1 p. |
artikel |
137 |
Plasma conditions required for attainment of amzimum gain in resonantly photo-pumped aluminium XII and neon IX
|
|
|
1985 |
35 |
6 |
p. 228- 1 p. |
artikel |
138 |
Plasma etching of sputtered Mo and MoSi2 thin films in NF3 gas mixtures
|
|
|
1985 |
35 |
6 |
p. 233- 1 p. |
artikel |
139 |
Population inversion in the HeO2 system
|
|
|
1985 |
35 |
6 |
p. 224- 1 p. |
artikel |
140 |
Preparation and properties of V-substituted garnet films for ion-implanted 1.0-micron bubble devices with improved high-temperature propagation.
|
|
|
1985 |
35 |
6 |
p. 238-239 2 p. |
artikel |
141 |
Priciples of low energy ion scattering
|
|
|
1985 |
35 |
6 |
p. 242- 1 p. |
artikel |
142 |
Probability density function of the intensity for a laser-generated speckle field after propagation through the turbulent atmosphere
|
|
|
1985 |
35 |
6 |
p. 232- 1 p. |
artikel |
143 |
Production of high-quality V-coatings
|
|
|
1985 |
35 |
6 |
p. 226- 1 p. |
artikel |
144 |
Production of multiply charged ions
|
|
|
1985 |
35 |
6 |
p. 240- 1 p. |
artikel |
145 |
Properties and characteristics of Al-films deposited in dc and rf magnetron systems
|
|
|
1985 |
35 |
6 |
p. 227- 1 p. |
artikel |
146 |
Pumpdown calculations for small volume rapid cycle duties
|
|
|
1985 |
35 |
6 |
p. 224- 1 p. |
artikel |
147 |
Pumping of corrosive or hazardous gases with turbomolecular and oilfilled rotary vane backing pumps
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1985 |
35 |
6 |
p. 224- 1 p. |
artikel |
148 |
Quantitative Auger microanalysis of the silicon-oxygen-nitrogen system
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1985 |
35 |
6 |
p. 241- 1 p. |
artikel |
149 |
Quantitative boron determination in doped SiO2 films by SIMS
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1985 |
35 |
6 |
p. 242- 1 p. |
artikel |
150 |
Radiation effects in materials for fusion reactors
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1985 |
35 |
6 |
p. 228- 1 p. |
artikel |
151 |
Random walk of cathode arc spots in vacuum
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1985 |
35 |
6 |
p. 223-224 2 p. |
artikel |
152 |
Rapid annealing of silicon with a scanning cw Hg lamp
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1985 |
35 |
6 |
p. 235- 1 p. |
artikel |
153 |
Reduced CuCr mixing and reduced PtCu interdiffusion by oxygen in Cu/Cr and Pt/Cu/Cr thin films
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1985 |
35 |
6 |
p. 235- 1 p. |
artikel |
154 |
Refractive Q-switching of a ruby laser by a moving plasma
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1985 |
35 |
6 |
p. 223- 1 p. |
artikel |
155 |
Reusable transit container taiolored for optical systems
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1985 |
35 |
6 |
p. 244- 1 p. |
artikel |
156 |
Rutherford backscattering analysis of electroless gold contacts on cadmium telluride
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1985 |
35 |
6 |
p. 228- 1 p. |
artikel |
157 |
Scanning electron-beam annealing of arsenic- and bismuth-implanted silicon
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1985 |
35 |
6 |
p. 236- 1 p. |
artikel |
158 |
Sealing techniques for large ultra-light vacuum systems
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1985 |
35 |
6 |
p. 224-225 2 p. |
artikel |
159 |
Self-focusing of powerful CO2-laser beams in collisional plasmas
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1985 |
35 |
6 |
p. 224- 1 p. |
artikel |
160 |
Silicide and Schottky barrier formation in the TiSi and the TiSiO
x
Si systems
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1985 |
35 |
6 |
p. 233- 1 p. |
artikel |
161 |
Silicides of ruthenium and osmium: Thin film reactions, diffusion, nucleation, and stability
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1985 |
35 |
6 |
p. 237- 1 p. |
artikel |
162 |
Silicon MBE apparatus for uniform high-rate deposition on standard format wafers.
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1985 |
35 |
6 |
p. 239- 1 p. |
artikel |
163 |
Silver sensitization of germanium selenide films
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1985 |
35 |
6 |
p. 225- 1 p. |
artikel |
164 |
Single photon laser-induced fluorescence detection of NO and SO2 for atmospheric conditions of composition and pressure
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1985 |
35 |
6 |
p. 230-231 2 p. |
artikel |
165 |
Some unexpected equilibrium and transport properties in indium-doped silicon 1468
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1985 |
35 |
6 |
p. 234- 1 p. |
artikel |
166 |
Space-charge effects in liquid metal ion sources
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1985 |
35 |
6 |
p. 240- 1 p. |
artikel |
167 |
Spectroscopy and atomic physics of highly ionized krypton for tokamak plasmas
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1985 |
35 |
6 |
p. 229- 1 p. |
artikel |
168 |
Spin-orbit effects in optical model analyses of 3He elastic scattering on oxygen isotopes
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1985 |
35 |
6 |
p. 229-230 2 p. |
artikel |
169 |
Statistical measurements of irradiance fluctuations of a multipass laser beam propagated through laboratory-simulated atmospheric turbulence
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1985 |
35 |
6 |
p. 232- 1 p. |
artikel |
170 |
Strain-induced anisotropy measurement in oxide films grown on silicon
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1985 |
35 |
6 |
p. 225-226 2 p. |
artikel |
171 |
Stratospheric ozone and hydroxyl radical measurements by ballonborne lidar
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1985 |
35 |
6 |
p. 231- 1 p. |
artikel |
172 |
Structure of vapor-deposited Ge films as a function of substrate temperature
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1985 |
35 |
6 |
p. 235- 1 p. |
artikel |
173 |
Study of space-charge effect by computer
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1985 |
35 |
6 |
p. 229- 1 p. |
artikel |
174 |
Submicron eutectic thin-film structure
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1985 |
35 |
6 |
p. 237- 1 p. |
artikel |
175 |
Surface processes contrtollinbg MBE heterojunction formation: GaAs (100)/Ge interface
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1985 |
35 |
6 |
p. 241-242 2 p. |
artikel |
176 |
Surface segregation model for Sn-doped GaAs grown by molecular beam epitaxy
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1985 |
35 |
6 |
p. 235- 1 p. |
artikel |
177 |
Surface struicture of silicon carbide irradiated with helium ions with monoenergy and continuous energy distributions
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1985 |
35 |
6 |
p. 241- 1 p. |
artikel |
178 |
Technique for the study of surface roughness of thin films
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1985 |
35 |
6 |
p. 225- 1 p. |
artikel |
179 |
Technology and applications of broad-beam ion sources used in sputtering. Part II. Applications
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1985 |
35 |
6 |
p. 239- 1 p. |
artikel |
180 |
Tellurium in silicon Part I: Channeling and Rutherford backscattering studies of tellurium implanted silicon
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1985 |
35 |
6 |
p. 230- 1 p. |
artikel |
181 |
Temperature and field dependence of intergrain barriers in polycrystalline n-InSb films
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1985 |
35 |
6 |
p. 234- 1 p. |
artikel |
182 |
Temperature dependence of the impact response of copper: erosion by melting
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1985 |
35 |
6 |
p. 238- 1 p. |
artikel |
183 |
The composition and structure of oxide films grown on the (110) crystal face of iron
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1985 |
35 |
6 |
p. 241- 1 p. |
artikel |
184 |
The effect of a magnetic field on the impurity band density of states in the atomic limit
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1985 |
35 |
6 |
p. 229- 1 p. |
artikel |
185 |
The effect of gas purity on the reflectance and resistivity of magnetron sputtered al;uminium and its alloys
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1985 |
35 |
6 |
p. 227- 1 p. |
artikel |
186 |
The effects of defects on charged particle propagation in crystalline solids
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1985 |
35 |
6 |
p. 232- 1 p. |
artikel |
187 |
The effects of heat treatments on the transport properties of Cu
x
S thin films
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1985 |
35 |
6 |
p. 236- 1 p. |
artikel |
188 |
The effects of impurity diffusion and surface damage on oxygen precipitation in silicon
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1985 |
35 |
6 |
p. 236- 1 p. |
artikel |
189 |
The effects of neon implantation on the magnetic properties of garnet layers
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1985 |
35 |
6 |
p. 236- 1 p. |
artikel |
190 |
The fabrication and use of silicon and gallium arsenide ion source extraction grids
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1985 |
35 |
6 |
p. 239- 1 p. |
artikel |
191 |
The higher-current vacuum arc in an axial magnetic field: An experimental investigation
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1985 |
35 |
6 |
p. 229- 1 p. |
artikel |
192 |
The magnetization and Curie temperature of compositionally modulated Cu/Ni films
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1985 |
35 |
6 |
p. 233- 1 p. |
artikel |
193 |
The origin of the 1.59 eV luminescence in ZnTe and the nature of the postrange defects from ion implantation
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1985 |
35 |
6 |
p. 236- 1 p. |
artikel |
194 |
Thermally stimulated short-circuited current from plasma-polymerized polyacrylonitrile thin film sandwiched between aluminium electrodes
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1985 |
35 |
6 |
p. 228- 1 p. |
artikel |
195 |
The spatial distribution and spectral characteristics of field-induced electron emission sites on broad-area high voltage electrodes
|
Bayliss, KH |
|
1985 |
35 |
6 |
p. 211-217 7 p. |
artikel |
196 |
The surface topography of Ag/Cu alloys sputterred by bombardment with 35–100 keV argon ions
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1985 |
35 |
6 |
p. 227- 1 p. |
artikel |
197 |
The theoretical KLL Auger spectrum of atomic Na+ and Ne
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1985 |
35 |
6 |
p. 228- 1 p. |
artikel |
198 |
The TY6 ionization gauge
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1985 |
35 |
6 |
p. 244- 1 p. |
artikel |
199 |
The use of molecular beams to support microspheres during plasma coating.
|
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1985 |
35 |
6 |
p. 239- 1 p. |
artikel |
200 |
The use og ion scattering for the study of radiation damage in metal and semiconductors: I. High energy scattering studies. II. Low energy scattering studies of ion bombardent induced surface damage
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1985 |
35 |
6 |
p. 240-241 2 p. |
artikel |
201 |
Three-body attachment in oxygen and an air-like nitrogen and oxygen mixture
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1985 |
35 |
6 |
p. 227- 1 p. |
artikel |
202 |
Titanium-tungsten contacts to Si: The effects of alloying on Schottky contact and on silicide formation
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1985 |
35 |
6 |
p. 235- 1 p. |
artikel |
203 |
Transient voltage measurement of primary ionisation in nitrogen
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1985 |
35 |
6 |
p. 230- 1 p. |
artikel |
204 |
Trapping and surface permeation of deuterium in He-implanted Fe
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1985 |
35 |
6 |
p. 236- 1 p. |
artikel |
205 |
Use of Rutherford backscattering and channeling in the study of (Hg. Cd)Te
|
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1985 |
35 |
6 |
p. 228- 1 p. |
artikel |
206 |
Vibration isolation table
|
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1985 |
35 |
6 |
p. 244- 1 p. |
artikel |
207 |
Viscoelastic flow past an infinite plate with suction and constant heat flux
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1985 |
35 |
6 |
p. 223- 1 p. |
artikel |
208 |
X-ray photoemission of carbon: Lineshape analysis and application to studies of coals
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1985 |
35 |
6 |
p. 228-229 2 p. |
artikel |