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                             32 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 A consideration of the effect of reactor parameters on the characteristics of layers prepared by low pressure chemical vapour deposition Hitchman, M.L.
 1984
 34 3-4 p. 377-384
8 p.
 artikel
2 Applications of coatings produced by field emission deposition Prewett, P.D.
 1984
 34 3-4 p. 385-390
6 p.
 artikel
3 A review of reactive ion beam etching for production Revell, P.J.
 1984
 34 3-4 p. 455-462
8 p.
 artikel
4 A review of the analysis of surfaces and thin films by AES and XPS Seah, M.P.
 1984
 34 3-4 p. 463-478
16 p.
 artikel
5 Argon and reactive ion beam etching for SAW devices Chapman, R.E.
 1984
 34 3-4 p. 417-424
8 p.
 artikel
6 Capabilities of molecular beam epitaxy and materials prospects Bardsley, W.
 1984
 34 3-4 p. 391-394
4 p.
 artikel
7 Electron probe X-ray microanalysis of surfaces and thin films Bulpett, R.
 1984
 34 3-4 p. 481-486
6 p.
 artikel
8 Glow discharge characteristics of importance in low pressure plasma techniques 1984
 34 3-4 p. 487-
1 p.
 artikel
9 Introduction Williams, B.D.
 1984
 34 3-4 p. 341-
1 p.
 artikel
10 Investigation of the dependence of reactive ion etching of AlSiCu alloys upon film deposition characteristics Maleham, J.
 1984
 34 3-4 p. 437-444
8 p.
 artikel
11 Ion implantation and optical devices Townsend, P.D.
 1984
 34 3-4 p. 395-398
4 p.
 artikel
12 Low pressure chemical vapour (BPOVD) of Al and AlSi alloy films 1984
 34 3-4 p. 488-
1 p.
 artikel
13 Low pressure chemical vapour (BPOVD) of Al and AlSi alloy films 1984
 34 3-4 p. 488-
1 p.
 artikel
14 Low pressure processes 1984
 34 3-4 p. 487-
1 p.
 artikel
15 Magnetron sputtered lithium niobate films Meek, P.R.
 1984
 34 3-4 p. 411-415
5 p.
 artikel
16 Metal doped polymer films prepared by plasma polymerization and their potential applications Biederman, H.
 1984
 34 3-4 p. 405-410
6 p.
 artikel
17 New patents 1984
 34 3-4 p. 491-494
4 p.
 artikel
18 New sputtering techniques for semiconductor metallization Hughes, G.
 1984
 34 3-4 p. 365-369
5 p.
 artikel
19 Optical film combinations for solar and thermal energy use Howson, R.P.
 1984
 34 3-4 p. 425-427
3 p.
 artikel
20 Plasma diagnostics in ion-assisted physical vapour deposition systems Hurley, R.E.
 1984
 34 3-4 p. 351-355
5 p.
 artikel
21 Plasma etching of silicon for semiconductor device fabrication 1984
 34 3-4 p. 488-
1 p.
 artikel
22 Plasma etching of titanium disilicide Tomkins, G.
 1984
 34 3-4 p. 451-454
4 p.
 artikel
23 Reactive ion etching of quartz for device applications 1984
 34 3-4 p. 488-
1 p.
 artikel
24 Review: dry etching of silicon oxide van Roosmalen, Alfred J.
 1984
 34 3-4 p. 429-436
8 p.
 artikel
25 Rutherford backscattering for thin film and surface analysis 1984
 34 3-4 p. 489-
1 p.
 artikel
26 Secondary ion mass spectrometry Kenway-Jackson, C.
 1984
 34 3-4 p. 479-480
2 p.
 artikel
27 Spatially resolved optical spectroscopy of plasma etching systems Field, D.
 1984
 34 3-4 p. 347-349
3 p.
 artikel
28 Sustaining mechanisms in rf plasmas Gill, M.D.
 1984
 34 3-4 p. 357-364
8 p.
 artikel
29 The effect of ion species on bombardment induced topography during ion etching of silicon Carter, G.
 1984
 34 3-4 p. 445-450
6 p.
 artikel
30 The plasma-enhanced deposition of hydrogenated amorphous silicon Easton, B.C.
 1984
 34 3-4 p. 371-376
6 p.
 artikel
31 The properties and applications of low energy plasmas Curran, J.E.
 1984
 34 3-4 p. 343-345
3 p.
 artikel
32 Use of thin films in optical waveguiding devices—a case study Pitt, C.W.
 1984
 34 3-4 p. 399-403
5 p.
 artikel
                             32 gevonden resultaten
 
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