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                             48 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 A computer controlled low energy electron diffractometer for surface crystallography de Carvalho, VE
1984
34 10-11 p. 893-897
5 p.
artikel
2 A computer simulation of nuclear reaction spectra with applications in analysis and depth profiling of light elements Simpson, JCB
1984
34 10-11 p. 899-902
4 p.
artikel
3 A maintenance-free turbomolecular pump of compact design 1984
34 10-11 p. 1022-1023
2 p.
artikel
4 A melting model for pulsed laser heating of silicon Cole, JM
1984
34 10-11 p. 871-874
4 p.
artikel
5 A molecular dynamics computer simulation of the time dependence of surface damage production in ion irradiated metal targets Webb, Roger P
1984
34 10-11 p. 847-851
5 p.
artikel
6 Applications of dynamic recoil mixing (DRM) Colligon, JS
1984
34 10-11 p. 843-846
4 p.
artikel
7 Artifacts in high resolution SIMS: the contribution of the ion source Thompson, SP
1984
34 10-11 p. 947-951
5 p.
artikel
8 Aspects of various processes for coating and surface hardening Almond, EA
1984
34 10-11 p. 835-842
8 p.
artikel
9 A theoretical model of a liquid metal ion source Kingham, David R
1984
34 10-11 p. 941-945
5 p.
artikel
10 Author index of articles 1984
34 10-11 p. i-
1 p.
artikel
11 Calculations of thermalization during the sputter deposition process Somekh, RE
1984
34 10-11 p. 987-990
4 p.
artikel
12 Characterization of bias sputtered metallization for IC technology McIntyre, N
1984
34 10-11 p. 963-968
6 p.
artikel
13 Characterization of interface states in thin films of thermally grown SiO2 Campabadal, F
1984
34 10-11 p. 1005-1007
3 p.
artikel
14 Characterization of semiconductor materials and devices by surface analysis techniques van Oostrom, A
1984
34 10-11 p. 881-892
12 p.
artikel
15 Composition and properties of unhydrogenated amorphous silicon produced by sputtering in argon or neon gas Zaka, Y
1984
34 10-11 p. 975-978
4 p.
artikel
16 Compositions of metals implanted to very high fluences Singer, IL
1984
34 10-11 p. 853-859
7 p.
artikel
17 Contamination effects in ion beam mixed cobalt silicide growth Edwards, SC
1984
34 10-11 p. 1017-1019
3 p.
artikel
18 Corrosive series turbomolecular pumps for semiconductor processes 1984
34 10-11 p. 1022-
1 p.
artikel
19 Dependence of photoconductive properties of unhydrogenated Ne-sputtered a-Si on preparation conditions Abo-Namous, SA
1984
34 10-11 p. 1001-1004
4 p.
artikel
20 Depth profiling of thin films of Ag and Au on Mo deposited on a quartz crystal microbalance Onsgaard, J
1984
34 10-11 p. 831-833
3 p.
artikel
21 Editorial Colligon, JS
1984
34 10-11 p. 817-
1 p.
artikel
22 Effect of laser and electron beam annealing on the structure of Pb1−xHgxS and Pb1−xHgxTe thin films 1984
34 10-11 p. 1023-
1 p.
artikel
23 Effect of laser and electron beam annealing on the structure of Pb1−xHgxS and Pb1−xHgxTe thin films 1984
34 10-11 p. 1023-
1 p.
artikel
24 Epitaxial silicide formation by electron beam annealing of nickel thin films Harper, RE
1984
34 10-11 p. 875-879
5 p.
artikel
25 Focused ion beam systems for materials analysis and modification Prewett, PD
1984
34 10-11 p. 931-939
9 p.
artikel
26 Formation of TiSi2 by electron beam annealing of arsenic implanted titanium films on silicon substrates Maydell-Ondrusz, EA
1984
34 10-11 p. 995-999
5 p.
artikel
27 Influence of substrate material on the initial thin film growth during ion deposition from a glow discharge Berg, S
1984
34 10-11 p. 969-973
5 p.
artikel
28 Laser-induced ion mass analysis: a novel technique for solid-state examination Ruckman, JC
1984
34 10-11 p. 911-924
14 p.
artikel
29 Laser-microprobe mass-analysis of surface layers and bulk solids Southon, MJ
1984
34 10-11 p. 903-909
7 p.
artikel
30 Magnetron sputtering of Cu55Ni45 Barber, ZH
1984
34 10-11 p. 991-994
4 p.
artikel
31 Metallic glass formation by ion implantation into nickel Al-Tamimi, ZY
1984
34 10-11 p. 861-865
5 p.
artikel
32 Microcomputer controlled growth of zinc selenide on gallium arsenide using molecular beam epitaxy Cooper, AJ
1984
34 10-11 p. 925-929
5 p.
artikel
33 Microwave plasma etching Suzuki, Keizo
1984
34 10-11 p. 953-957
5 p.
artikel
34 Nitrogen implantation in titanium: RBS, THEED and TEM analysis Gauthier, J-P
1984
34 10-11 p. 1013-1016
4 p.
artikel
35 Optical furnace annealing of high and low dose silicon ion implanted GaAs 1984
34 10-11 p. 1021-
1 p.
artikel
36 Particle energy loss spectroscopy and SEM studies of topography development in thin aluminium films implanted with high doses of helium Barfoot, KM
1984
34 10-11 p. 825-829
5 p.
artikel
37 Plasma processing 1984
34 10-11 p. 1022-
1 p.
artikel
38 RBS and SIMS measurements of the fluence dependence of the range distributions of Pb implanted into Si(111) crystals 1984
34 10-11 p. 1021-
1 p.
artikel
39 Regeneration of cryopumps in semiconductor processing 1984
34 10-11 p. 1023-
1 p.
artikel
40 Removal of damage in ion-implanted GaInAs Shahid, MA
1984
34 10-11 p. 867-870
4 p.
artikel
41 Some problems and prospects in high erosion yield sputtering Carter, G
1984
34 10-11 p. 819-824
6 p.
artikel
42 Some recent trends in the preparation of thin layers by low pressure chemical vapour deposition Hitchman, Michael L
1984
34 10-11 p. 979-986
8 p.
artikel
43 Static SIMS, FABMS and SIMS imaging for surface analysis of technologically important materials 1984
34 10-11 p. 1021-
1 p.
artikel
44 Surface activation of polymers in a microwave plasma Neusch, M
1984
34 10-11 p. 959-961
3 p.
artikel
45 The adaptation of turbomolecular pumps to plasma etching processes Henning, J
1984
34 10-11 p. 1009-1012
4 p.
artikel
46 Two-dimensional electron gas systems at semiconductor interfaces 1984
34 10-11 p. 1021-1022
2 p.
artikel
47 Vacuum pumping equipment for semiconductor processing units 1984
34 10-11 p. 1023-
1 p.
artikel
48 Video tape manufacturing by high vacuum evaporation—aspects of machine technology 1984
34 10-11 p. 1022-
1 p.
artikel
                             48 gevonden resultaten
 
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