nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
A computer controlled low energy electron diffractometer for surface crystallography
|
de Carvalho, VE |
|
1984 |
34 |
10-11 |
p. 893-897 5 p. |
artikel |
2 |
A computer simulation of nuclear reaction spectra with applications in analysis and depth profiling of light elements
|
Simpson, JCB |
|
1984 |
34 |
10-11 |
p. 899-902 4 p. |
artikel |
3 |
A maintenance-free turbomolecular pump of compact design
|
|
|
1984 |
34 |
10-11 |
p. 1022-1023 2 p. |
artikel |
4 |
A melting model for pulsed laser heating of silicon
|
Cole, JM |
|
1984 |
34 |
10-11 |
p. 871-874 4 p. |
artikel |
5 |
A molecular dynamics computer simulation of the time dependence of surface damage production in ion irradiated metal targets
|
Webb, Roger P |
|
1984 |
34 |
10-11 |
p. 847-851 5 p. |
artikel |
6 |
Applications of dynamic recoil mixing (DRM)
|
Colligon, JS |
|
1984 |
34 |
10-11 |
p. 843-846 4 p. |
artikel |
7 |
Artifacts in high resolution SIMS: the contribution of the ion source
|
Thompson, SP |
|
1984 |
34 |
10-11 |
p. 947-951 5 p. |
artikel |
8 |
Aspects of various processes for coating and surface hardening
|
Almond, EA |
|
1984 |
34 |
10-11 |
p. 835-842 8 p. |
artikel |
9 |
A theoretical model of a liquid metal ion source
|
Kingham, David R |
|
1984 |
34 |
10-11 |
p. 941-945 5 p. |
artikel |
10 |
Author index of articles
|
|
|
1984 |
34 |
10-11 |
p. i- 1 p. |
artikel |
11 |
Calculations of thermalization during the sputter deposition process
|
Somekh, RE |
|
1984 |
34 |
10-11 |
p. 987-990 4 p. |
artikel |
12 |
Characterization of bias sputtered metallization for IC technology
|
McIntyre, N |
|
1984 |
34 |
10-11 |
p. 963-968 6 p. |
artikel |
13 |
Characterization of interface states in thin films of thermally grown SiO2
|
Campabadal, F |
|
1984 |
34 |
10-11 |
p. 1005-1007 3 p. |
artikel |
14 |
Characterization of semiconductor materials and devices by surface analysis techniques
|
van Oostrom, A |
|
1984 |
34 |
10-11 |
p. 881-892 12 p. |
artikel |
15 |
Composition and properties of unhydrogenated amorphous silicon produced by sputtering in argon or neon gas
|
Zaka, Y |
|
1984 |
34 |
10-11 |
p. 975-978 4 p. |
artikel |
16 |
Compositions of metals implanted to very high fluences
|
Singer, IL |
|
1984 |
34 |
10-11 |
p. 853-859 7 p. |
artikel |
17 |
Contamination effects in ion beam mixed cobalt silicide growth
|
Edwards, SC |
|
1984 |
34 |
10-11 |
p. 1017-1019 3 p. |
artikel |
18 |
Corrosive series turbomolecular pumps for semiconductor processes
|
|
|
1984 |
34 |
10-11 |
p. 1022- 1 p. |
artikel |
19 |
Dependence of photoconductive properties of unhydrogenated Ne-sputtered a-Si on preparation conditions
|
Abo-Namous, SA |
|
1984 |
34 |
10-11 |
p. 1001-1004 4 p. |
artikel |
20 |
Depth profiling of thin films of Ag and Au on Mo deposited on a quartz crystal microbalance
|
Onsgaard, J |
|
1984 |
34 |
10-11 |
p. 831-833 3 p. |
artikel |
21 |
Editorial
|
Colligon, JS |
|
1984 |
34 |
10-11 |
p. 817- 1 p. |
artikel |
22 |
Effect of laser and electron beam annealing on the structure of Pb1−xHgxS and Pb1−xHgxTe thin films
|
|
|
1984 |
34 |
10-11 |
p. 1023- 1 p. |
artikel |
23 |
Effect of laser and electron beam annealing on the structure of Pb1−xHgxS and Pb1−xHgxTe thin films
|
|
|
1984 |
34 |
10-11 |
p. 1023- 1 p. |
artikel |
24 |
Epitaxial silicide formation by electron beam annealing of nickel thin films
|
Harper, RE |
|
1984 |
34 |
10-11 |
p. 875-879 5 p. |
artikel |
25 |
Focused ion beam systems for materials analysis and modification
|
Prewett, PD |
|
1984 |
34 |
10-11 |
p. 931-939 9 p. |
artikel |
26 |
Formation of TiSi2 by electron beam annealing of arsenic implanted titanium films on silicon substrates
|
Maydell-Ondrusz, EA |
|
1984 |
34 |
10-11 |
p. 995-999 5 p. |
artikel |
27 |
Influence of substrate material on the initial thin film growth during ion deposition from a glow discharge
|
Berg, S |
|
1984 |
34 |
10-11 |
p. 969-973 5 p. |
artikel |
28 |
Laser-induced ion mass analysis: a novel technique for solid-state examination
|
Ruckman, JC |
|
1984 |
34 |
10-11 |
p. 911-924 14 p. |
artikel |
29 |
Laser-microprobe mass-analysis of surface layers and bulk solids
|
Southon, MJ |
|
1984 |
34 |
10-11 |
p. 903-909 7 p. |
artikel |
30 |
Magnetron sputtering of Cu55Ni45
|
Barber, ZH |
|
1984 |
34 |
10-11 |
p. 991-994 4 p. |
artikel |
31 |
Metallic glass formation by ion implantation into nickel
|
Al-Tamimi, ZY |
|
1984 |
34 |
10-11 |
p. 861-865 5 p. |
artikel |
32 |
Microcomputer controlled growth of zinc selenide on gallium arsenide using molecular beam epitaxy
|
Cooper, AJ |
|
1984 |
34 |
10-11 |
p. 925-929 5 p. |
artikel |
33 |
Microwave plasma etching
|
Suzuki, Keizo |
|
1984 |
34 |
10-11 |
p. 953-957 5 p. |
artikel |
34 |
Nitrogen implantation in titanium: RBS, THEED and TEM analysis
|
Gauthier, J-P |
|
1984 |
34 |
10-11 |
p. 1013-1016 4 p. |
artikel |
35 |
Optical furnace annealing of high and low dose silicon ion implanted GaAs
|
|
|
1984 |
34 |
10-11 |
p. 1021- 1 p. |
artikel |
36 |
Particle energy loss spectroscopy and SEM studies of topography development in thin aluminium films implanted with high doses of helium
|
Barfoot, KM |
|
1984 |
34 |
10-11 |
p. 825-829 5 p. |
artikel |
37 |
Plasma processing
|
|
|
1984 |
34 |
10-11 |
p. 1022- 1 p. |
artikel |
38 |
RBS and SIMS measurements of the fluence dependence of the range distributions of Pb implanted into Si(111) crystals
|
|
|
1984 |
34 |
10-11 |
p. 1021- 1 p. |
artikel |
39 |
Regeneration of cryopumps in semiconductor processing
|
|
|
1984 |
34 |
10-11 |
p. 1023- 1 p. |
artikel |
40 |
Removal of damage in ion-implanted GaInAs
|
Shahid, MA |
|
1984 |
34 |
10-11 |
p. 867-870 4 p. |
artikel |
41 |
Some problems and prospects in high erosion yield sputtering
|
Carter, G |
|
1984 |
34 |
10-11 |
p. 819-824 6 p. |
artikel |
42 |
Some recent trends in the preparation of thin layers by low pressure chemical vapour deposition
|
Hitchman, Michael L |
|
1984 |
34 |
10-11 |
p. 979-986 8 p. |
artikel |
43 |
Static SIMS, FABMS and SIMS imaging for surface analysis of technologically important materials
|
|
|
1984 |
34 |
10-11 |
p. 1021- 1 p. |
artikel |
44 |
Surface activation of polymers in a microwave plasma
|
Neusch, M |
|
1984 |
34 |
10-11 |
p. 959-961 3 p. |
artikel |
45 |
The adaptation of turbomolecular pumps to plasma etching processes
|
Henning, J |
|
1984 |
34 |
10-11 |
p. 1009-1012 4 p. |
artikel |
46 |
Two-dimensional electron gas systems at semiconductor interfaces
|
|
|
1984 |
34 |
10-11 |
p. 1021-1022 2 p. |
artikel |
47 |
Vacuum pumping equipment for semiconductor processing units
|
|
|
1984 |
34 |
10-11 |
p. 1023- 1 p. |
artikel |
48 |
Video tape manufacturing by high vacuum evaporation—aspects of machine technology
|
|
|
1984 |
34 |
10-11 |
p. 1022- 1 p. |
artikel |