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                             61 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 A calorimeter-Faraday cup to measure energy content of ion beams Luzzi, G
 1984
 34 1-2 p. 235-238
4 p.
 artikel
2 A comparison of SIMS with other techniques based on ion-beam solid interactions Werner, HW
 1984
 34 1-2 p. 83-101
19 p.
 artikel
3 A compilation of mass spectra from liquid metal sources Broughton, D
 1984
 34 1-2 p. 275-279
5 p.
 artikel
4 A high-current beam transport facility for hollow beams Krejcik, P
 1984
 34 1-2 p. 11-15
5 p.
 artikel
5 A liquid metal source of caesium ions for secondary ion mass spectrometry Prewett, PD
 1984
 34 1-2 p. 107-111
5 p.
 artikel
6 A low energy ion beam system for thermal evolution measurements of damage in ion bombarded single crystals Bailey, P
 1984
 34 1-2 p. 239-244
6 p.
 artikel
7 An ion beam system for ion scattering, bombardment induced light emission and secondary ion mass spectrometry Armour, DG
 1984
 34 1-2 p. 217-221
5 p.
 artikel
8 Atom beam source Franks, J
 1984
 34 1-2 p. 259-261
3 p.
 artikel
9 Beam-induced broadening effects in sputter depth profiling Wittmaack, Klaus
 1984
 34 1-2 p. 119-137
19 p.
 artikel
10 Charge-changing collisions in the JET neutral injection bending magnets Nielsen, BR
 1984
 34 1-2 p. 37-40
4 p.
 artikel
11 Computational models of liquid metal ion sources Evans, GA
 1984
 34 1-2 p. 47-50
4 p.
 artikel
12 CORDIS—an improved high-current ion source for gases Keller, R
 1984
 34 1-2 p. 31-35
5 p.
 artikel
13 Current status of the Daresbury Isotope separator MacGregor, IJD
 1984
 34 1-2 p. 3-6
4 p.
 artikel
14 Damage effects in silicon and MNOS structures caused by beams of ionized and neutral argon atoms with energies below 5 keV Bangert, U
 1984
 34 1-2 p. 163-166
4 p.
 artikel
15 Deterministic models of ion erosion, reflection and redeposition Smith, R
 1984
 34 1-2 p. 175-180
6 p.
 artikel
16 Editorial Board 1984
 34 1-2 p. IFC-
1 p.
 artikel
17 Effect of plasma imperfections on the divergence and emittance of the beam extracted from duoplasmatron sources Aubert, J
 1984
 34 1-2 p. 229-234
6 p.
 artikel
18 Effects of Ga ion irradiation from a liquid metal ion source Moore, VJ
 1984
 34 1-2 p. 189-191
3 p.
 artikel
19 Energy distribution, intensity modulation and emittance of the beam extracted from a duopigatron source Grandchamp, JP
 1984
 34 1-2 p. 67-71
5 p.
 artikel
20 Energy loss spectra for single electron capture in Ar3+-He collisions Kamber, EY
 1984
 34 1-2 p. 63-65
3 p.
 artikel
21 Field emission deposition: ion assisted deposition using liquid metal sources Mahony, C
 1984
 34 1-2 p. 301-304
4 p.
 artikel
22 High power beams for neutral injection heating Martin, AR
 1984
 34 1-2 p. 17-24
8 p.
 artikel
23 HV-gap geometries for high current heavy ion acceleration and beam transport Spädtke, P
 1984
 34 1-2 p. 73-82
10 p.
 artikel
24 Introduction Grant, WA
 1984
 34 1-2 p. 1-
1 p.
 artikel
25 Ion beam etching GaAs for integrated optical applications Webb, AP
 1984
 34 1-2 p. 159-162
4 p.
 artikel
26 JET Milestone 1984
 34 1-2 p. 333-
1 p.
 artikel
27 Measurement of ion beam parameters with electrostatic induction electrodes Szajnowski, WJ
 1984
 34 1-2 p. 285-289
5 p.
 artikel
28 Measurements of space charge compensation of ion beams Kreisler, P
 1984
 34 1-2 p. 215-216
2 p.
 artikel
29 Micro ion beams for fabrication Ahmed, H
 1984
 34 1-2 p. 41-
1 p.
 artikel
30 Microwave ion source for high current metal beams Noriyuki Sakudo,
 1984
 34 1-2 p. 245-249
5 p.
 artikel
31 Nanometre structures in semiconductors formed by low energy ion implantation Shannon, JM
 1984
 34 1-2 p. 193-197
5 p.
 artikel
32 Neutral emissions from liquid metal ion sources Thompson, SP
 1984
 34 1-2 p. 223-228
6 p.
 artikel
33 New patents 1984
 34 1-2 p. 335-339
5 p.
 artikel
34 Observations of electron stimulated desorption during SIMS profiling of insulators Kilner, JA
 1984
 34 1-2 p. 139-143
5 p.
 artikel
35 Oxygen distributions in synthesized SiO2 layers formed by high dose O+ implantation into silicon Hemment, PLF
 1984
 34 1-2 p. 203-208
6 p.
 artikel
36 Physical and chemical mechanisms in the ion-enhanced etching of silicon Coburn, JW
 1984
 34 1-2 p. 157-158
2 p.
 artikel
37 Plasma enhanced deposition of ‘silicon nitride’ for use as an encapsulant for silicon ion-implanted gallium arsenide Bartle, DC
 1984
 34 1-2 p. 315-320
6 p.
 artikel
38 Production of a dense low energy positive hydrogen ion beam van Bommel, PJM
 1984
 34 1-2 p. 25-29
5 p.
 artikel
39 Pulsed Cs beam development for the BNL polarized H− source Alessi, JG
 1984
 34 1-2 p. 7-10
4 p.
 artikel
40 Reactive ion plating of TiO2 Howson, RP
 1984
 34 1-2 p. 291-294
4 p.
 artikel
41 Recent developments in high current liquid metal ion sources for space propulsion Bartoli, C.
 1984
 34 1-2 p. 43-46
4 p.
 artikel
42 Recoil profiles produced by ion implantation through dielectric layers Blunt, RT
 1984
 34 1-2 p. 281-284
4 p.
 artikel
43 Shallow ion implantation in gallium arsenide Grange, JD
 1984
 34 1-2 p. 199-201
3 p.
 artikel
44 SIMS of solid hydrogen Clampitt, R
 1984
 34 1-2 p. 113-117
5 p.
 artikel
45 Small, simple and high efficiency arsenic ion source Lejeune, C
 1984
 34 1-2 p. 251-257
7 p.
 artikel
46 Some mechanisms of sputtered negative ion production Underwood, MC
 1984
 34 1-2 p. 153-156
4 p.
 artikel
47 Surface damage of PET sheet in rf bias ion plating Suzuki, K
 1984
 34 1-2 p. 181-187
7 p.
 artikel
48 Surface morphology of Si(100), GaAs(100) and InP(100) following O2 + and Cs+ ion bombardment Duncan, S
 1984
 34 1-2 p. 145-151
7 p.
 artikel
49 The application of liquid metal ion sources to SIMS Waugh, AR
 1984
 34 1-2 p. 103-106
4 p.
 artikel
50 The Center for Professional Advancement 1984
 34 1-2 p. 333-334
2 p.
 artikel
51 The characteristics of the ion and neutral fluxes incident on the substrate in an ion plating discharge Armour, DG
 1984
 34 1-2 p. 295-300
6 p.
 artikel
52 The deposition of inert gas ions in poly-N-vinylcarbazole (PVK) Barbaszewski, T
 1984
 34 1-2 p. 329-332
4 p.
 artikel
53 The effect of ion species on morphological structure development of ion bombarded (1131) single crystal Cu Carter, G
 1984
 34 1-2 p. 167-173
7 p.
 artikel
54 The effects of plasma and ion beam processing on the properties of n-GaAs Schottky diodes Smith, PJ
 1984
 34 1-2 p. 209-213
5 p.
 artikel
55 The epitaxial synthesis of diamond by the deposition of low energy carbon ions Freeman, JH
 1984
 34 1-2 p. 305-314
10 p.
 artikel
56 The influence of ion bombardment on the composition of reactively deposited alloy oxide films Ridge, Martin I
 1984
 34 1-2 p. 327-
1 p.
 artikel
57 The ion optics of low-energy ion beams Drummond, IW
 1984
 34 1-2 p. 51-61
11 p.
 artikel
58 The measurement of charge transfer cross-sections for a variety of ions on air and argon Kheyrandish, H
 1984
 34 1-2 p. 269-273
5 p.
 artikel
59 The 11th International Symposium on Discharges and Electrical Insulation in Vacuum 1984
 34 1-2 p. 334-
1 p.
 artikel
60 The use of an LMIS and argon ion sputtering in studies of thin film strain gauges Taylor, AG
 1984
 34 1-2 p. 321-325
5 p.
 artikel
61 Topography evolution in sputtered stratified media and in spatio-time variable ion flux conditions Carter, G
 1984
 34 1-2 p. 263-267
5 p.
 artikel
                             61 gevonden resultaten
 
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