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                             35 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 A graphite crucible for spitting-free high rate e-gun evaporation of Ge 1983
33 4 p. 248-
1 p.
artikel
2 Aspects for the design of sputtering systems Maniv, S
1983
33 4 p. 215-219
5 p.
artikel
3 Cadmium selenide crystal: a novel room temperature gamma radiation detector 1983
33 4 p. 251-
1 p.
artikel
4 Carrier surface recombination in HgI2 nuclear detectors 1983
33 4 p. 249-
1 p.
artikel
5 Characterization of the Polarity Dependent Memory and Switching effect in sandwiches of metal/a-Si/ITO Lewin, I
1983
33 4 p. 237-240
4 p.
artikel
6 Characterization of titanium coatings obtained by the cold plasma technique Ruder, A
1983
33 4 p. 231-233
3 p.
artikel
7 Crystal growth of CdEr2S4 by vapour transport 1983
33 4 p. 250-251
2 p.
artikel
8 Cut-on interference filter for the 8–11.7 μm region Lubezky, I
1983
33 4 p. 225-226
2 p.
artikel
9 Deposition and characteization of ZrO2 from OM-CVD 1983
33 4 p. 249-
1 p.
artikel
10 Erosion processes of metal cathodes by electric vacuum arcs 1983
33 4 p. 247-248
2 p.
artikel
11 High mobility lead-tin-telluride films evaporated onto polyimide substrates Klein, A
1983
33 4 p. 245-246
2 p.
artikel
12 Multilayer antireflection coating on BK-7 for the visible and 1.06 μm 1983
33 4 p. 248-
1 p.
artikel
13 Multilayer antireflection coating on sapphire for the 3–5 μm region 1983
33 4 p. 248-
1 p.
artikel
14 On the mechanism of electron-beam induced phenomena in Na β-alumina Livshits, A
1983
33 4 p. 241-243
3 p.
artikel
15 Pb-salts heteroepitaxy for injection lasers at ∼10μm 1983
33 4 p. 249-
1 p.
artikel
16 Photo-absorption experiments on amorphous semiconductor films using a wave-guided CO laser 1983
33 4 p. 249-
1 p.
artikel
17 Photoelectron spectroscopy—principles and applications Azoulay, J
1983
33 4 p. 211-213
3 p.
artikel
18 Plasma ionization in inorganic mass spectrometry 1983
33 4 p. 247-
1 p.
artikel
19 Preparation by spray hydrolysis and characterization of properties of tin doped indium oxide electrodes 1983
33 4 p. 251-
1 p.
artikel
20 Preparation of gallium phosphide thin films from organometallic gallium 1983
33 4 p. 249-
1 p.
artikel
21 Quantitative SIMS analysis Furman, E
1983
33 4 p. 209-
1 p.
artikel
22 Raman spectra and optical constants of ion-implanted silicon-on-sapphire (SOS) layers 1983
33 4 p. 250-
1 p.
artikel
23 Recent developments in thermal ionization mass spectrometry 1983
33 4 p. 247-
1 p.
artikel
24 Revised theory of pierce-type electron guns 1983
33 4 p. 248-
1 p.
artikel
25 Silicon-germanium heterostructures 1983
33 4 p. 250-
1 p.
artikel
26 Solid state reactions of TaW thin films and Si single crystals Appelbaum, A
1983
33 4 p. 227-230
4 p.
artikel
27 Some considerations in VLSI metallization by sputtering 1983
33 4 p. 248-
1 p.
artikel
28 6th congress of the Israeli society for vacuum technology Grünbaum, Enrique
1983
33 4 p. 205-
1 p.
artikel
29 The effect of an oxide layer on the ohmicity of contacts to amorphous silicon Levin, KH
1983
33 4 p. 235-236
2 p.
artikel
30 The effect of deposition temperature on the properties of a-Si:F films 1983
33 4 p. 250-
1 p.
artikel
31 Titles of contributions 1983
33 4 p. 207-208
2 p.
artikel
32 Undesirable contamination in rf sputtered α-Si layers Aharoni, H
1983
33 4 p. 221-224
4 p.
artikel
33 Vacuum high temperature microscopy 1983
33 4 p. 247-
1 p.
artikel
34 Vertical unseeded vapour growth of large CdTe crystals 1983
33 4 p. 250-
1 p.
artikel
35 What happens at the interface between two layers? A qualitative study 1983
33 4 p. 251-
1 p.
artikel
                             35 gevonden resultaten
 
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