| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
5210. A compact ion source with high brightness
|
|
|
1982
|
32 |
7 |
p. 457-
1 p.
|
artikel
|
| 2 |
5114. A Fabry Perot interferometer for plasma diagnostics
|
|
|
1982
|
32 |
7 |
p. 447-
1 p.
|
artikel
|
| 3 |
5225. A goniometer head for an atom-probe field ion microscope
|
|
|
1982
|
32 |
7 |
p. 458-
1 p.
|
artikel
|
| 4 |
5125. A hollow-cathode discharge as a cold uniform plasma source
|
|
|
1982
|
32 |
7 |
p. 448-
1 p.
|
artikel
|
| 5 |
5102. A molecular dynamics simulation study of the influence of the ionatom potential function upon sputtering
|
|
|
1982
|
32 |
7 |
p. 446-
1 p.
|
artikel
|
| 6 |
5122. An alpha particle range spectrometer using solid state nuclear track detectors
|
|
|
1982
|
32 |
7 |
p. 448-
1 p.
|
artikel
|
| 7 |
5039. An apparatus for measuring the adsorption of gases at high and low pressures
|
|
|
1982
|
32 |
7 |
p. 439-
1 p.
|
artikel
|
| 8 |
5053. An approach to the non-linearity of an ionization vacuum gauge at the upper limit of the measured pressure
|
|
|
1982
|
32 |
7 |
p. 441-
1 p.
|
artikel
|
| 9 |
5243. An atom probe study of the anomalous field evaporation of alloys containing silicon
|
|
|
1982
|
32 |
7 |
p. 460-
1 p.
|
artikel
|
| 10 |
5051. A new development of refrigerators of high operational reliability for use in cryopumps
|
|
|
1982
|
32 |
7 |
p. 440-441
2 p.
|
artikel
|
| 11 |
5063. A new simple universal leak-detector with air-cooled turbo-pump
|
|
|
1982
|
32 |
7 |
p. 442-
1 p.
|
artikel
|
| 12 |
5252. A new theory of electronic surface states
|
|
|
1982
|
32 |
7 |
p. 461-462
2 p.
|
artikel
|
| 13 |
5231. An extended X-ray absorption fine structure study of amorphous and crystalline germanium
|
|
|
1982
|
32 |
7 |
p. 459-
1 p.
|
artikel
|
| 14 |
5246. Angle-resolved and -integrated photoemission from a ZnSe (110) surface
|
|
|
1982
|
32 |
7 |
p. 461-
1 p.
|
artikel
|
| 15 |
5216. Angle-resolved electron spectrometer with multidetection
|
|
|
1982
|
32 |
7 |
p. 457-
1 p.
|
artikel
|
| 16 |
5040. A nitrogen ion laser pumped by a rapid discharge
|
|
|
1982
|
32 |
7 |
p. 439-
1 p.
|
artikel
|
| 17 |
Announcement
|
|
|
1982
|
32 |
7 |
p. 467-
1 p.
|
artikel
|
| 18 |
5052. Application of cryopumps in industrial vacuum technology
|
|
|
1982
|
32 |
7 |
p. 441-
1 p.
|
artikel
|
| 19 |
5054. Application of low temperature calorimetry for the measurement of impingement rate of gas molecules
|
|
|
1982
|
32 |
7 |
p. 441-
1 p.
|
artikel
|
| 20 |
5065. A self-latching electromechanical shutter for use in vacuum evaporators
|
|
|
1982
|
32 |
7 |
p. 442-
1 p.
|
artikel
|
| 21 |
5043. A semi-empirical formula to describe the net emission coefficient of self-absorbed spectral lines for use in modelling high-pressure discharge lamps
|
|
|
1982
|
32 |
7 |
p. 440-
1 p.
|
artikel
|
| 22 |
5047. A simple understanding of net outgassing rate as a function of pumping speed
|
|
|
1982
|
32 |
7 |
p. 440-
1 p.
|
artikel
|
| 23 |
5172. A strain monitor for ion implantation
|
|
|
1982
|
32 |
7 |
p. 453-
1 p.
|
artikel
|
| 24 |
5150. A study of Ge GaAs interfaces grown by molecular beam epitaxy
|
|
|
1982
|
32 |
7 |
p. 451-
1 p.
|
artikel
|
| 25 |
5219. A study of secondary molecular ion formation in rare earth and rare earth oxides
|
|
|
1982
|
32 |
7 |
p. 458-
1 p.
|
artikel
|
| 26 |
5253. A study of surface potentials of GaAs using the Kelvin probe method and the variations of the photoemission threshold
|
|
|
1982
|
32 |
7 |
p. 462-
1 p.
|
artikel
|
| 27 |
5238. A study of the SiAuAg interface by surface techniques
|
|
|
1982
|
32 |
7 |
p. 460-
1 p.
|
artikel
|
| 28 |
5104. Asymmetric triangular grating profiles with 90 groove angles produced by ion-beam erosion
|
|
|
1982
|
32 |
7 |
p. 446-
1 p.
|
artikel
|
| 29 |
5249. Atomic geometry of AlGaAs interfaces: GaAs (110)-p (1 × 1)-Al(θ), 0 ≤ θ ≤ 8.5 monolayers
|
|
|
1982
|
32 |
7 |
p. 461-
1 p.
|
artikel
|
| 30 |
5245. Atomic structure of GaP (110) and (111) faces
|
|
|
1982
|
32 |
7 |
p. 460-461
2 p.
|
artikel
|
| 31 |
5066. Automatic shutter controller for molecular beam epitaxy
|
|
|
1982
|
32 |
7 |
p. 442-
1 p.
|
artikel
|
| 32 |
[bd5078. Thin film preparation by plasma and low pressure CVD in a horizontal reactor
|
|
|
1982
|
32 |
7 |
p. 443-
1 p.
|
artikel
|
| 33 |
5143. Beam-intensity fluctuations in atmospheric turbulence
|
|
|
1982
|
32 |
7 |
p. 450-
1 p.
|
artikel
|
| 34 |
5145. Calculation and observation of thermal electrostatic noise in solar wind plasma
|
|
|
1982
|
32 |
7 |
p. 450-
1 p.
|
artikel
|
| 35 |
5197. Changes in the viscoelastic and electrical properties of polyethylene by the effect of gamma irradiation
|
|
|
1982
|
32 |
7 |
p. 455-456
2 p.
|
artikel
|
| 36 |
5141. Channeling analysis of MBE InAlAs InGaAs interfaces
|
|
|
1982
|
32 |
7 |
p. 450-
1 p.
|
artikel
|
| 37 |
5213. Chemical composition of the SiO 2 InSb interface as determined by X-ray photoelectron spectroscopy
|
|
|
1982
|
32 |
7 |
p. 457-
1 p.
|
artikel
|
| 38 |
5089. Coating of preformed pieces with TiN by high rate sputtering
|
|
|
1982
|
32 |
7 |
p. 444-445
2 p.
|
artikel
|
| 39 |
5148. Compounds in the PdSi and PtSi system obtained by electron bombardment and post-thermal annealing
|
|
|
1982
|
32 |
7 |
p. 450-451
2 p.
|
artikel
|
| 40 |
5139. Computer studies on radiation of axially-channeled electrons
|
|
|
1982
|
32 |
7 |
p. 450-
1 p.
|
artikel
|
| 41 |
5041. Contact charge-transfer lasers
|
|
|
1982
|
32 |
7 |
p. 439-
1 p.
|
artikel
|
| 42 |
5117. Continuous slowing-down approximation range of 50 KeV 100 MeV electrons
|
|
|
1982
|
32 |
7 |
p. 448-
1 p.
|
artikel
|
| 43 |
5096. Contribution of anisotropic velocity distribution of recoil atoms to sputtering yields and angular distributions of sputtered atoms
|
|
|
1982
|
32 |
7 |
p. 445-
1 p.
|
artikel
|
| 44 |
5132. Cross sections for the 16O(16O,8Beg,s)24Mg reaction and mechanisms of α-rearrangement reactions
|
|
|
1982
|
32 |
7 |
p. 449-
1 p.
|
artikel
|
| 45 |
5057. Cryostat for the production and acceleration of deuterium pellets for use in nuclear fusion plants
|
|
|
1982
|
32 |
7 |
p. 441-
1 p.
|
artikel
|
| 46 |
5196. Deep levels in electron irradiated edge-defined film-fed growth ribbon silicon
|
|
|
1982
|
32 |
7 |
p. 455-
1 p.
|
artikel
|
| 47 |
5135. Dependence of the radiation spectra from channeled electrons on their energy
|
|
|
1982
|
32 |
7 |
p. 449-
1 p.
|
artikel
|
| 48 |
5230. Depth profile composition studies of thin film CdS:Cu2S solar cells using XPS and AES
|
|
|
1982
|
32 |
7 |
p. 459-
1 p.
|
artikel
|
| 49 |
5240. Design of a molecular beam surface scattering apparatus for velocity and angular distribution measurements
|
|
|
1982
|
32 |
7 |
p. 460-
1 p.
|
artikel
|
| 50 |
5059. Detecting leaks in small parts
|
|
|
1982
|
32 |
7 |
p. 441-
1 p.
|
artikel
|
| 51 |
5224. Determination of the multiplier gain of a photomultiplier
|
|
|
1982
|
32 |
7 |
p. 458-
1 p.
|
artikel
|
| 52 |
5142. Developments and trends in vacuum metrology
|
|
|
1982
|
32 |
7 |
p. 450-
1 p.
|
artikel
|
| 53 |
5058. Developments of helium-leak-detection-techniques for UHVsystems of large accelerators and storage rings
|
|
|
1982
|
32 |
7 |
p. 441-
1 p.
|
artikel
|
| 54 |
5124. Diagnostics of high-pressure arc plasmas from laser-induced fluorescence
|
|
|
1982
|
32 |
7 |
p. 448-
1 p.
|
artikel
|
| 55 |
5077. Differences in nickel—aluminium films prepared by different evaporation methods
|
|
|
1982
|
32 |
7 |
p. 443-
1 p.
|
artikel
|
| 56 |
5092. Differential sputtering and surface segregation: The role of enhanced diffusion
|
|
|
1982
|
32 |
7 |
p. 445-
1 p.
|
artikel
|
| 57 |
5177. Diffusion of zinc in gallium arsenide: A new model
|
|
|
1982
|
32 |
7 |
p. 453-
1 p.
|
artikel
|
| 58 |
5179. Directional reactive-ion-etching of InP with Cl2 containing gases
|
|
|
1982
|
32 |
7 |
p. 454-
1 p.
|
artikel
|
| 59 |
5129. Double layer formation in a magnetized laboratory plasma
|
|
|
1982
|
32 |
7 |
p. 449-
1 p.
|
artikel
|
| 60 |
Editorial
|
|
|
1982
|
32 |
7 |
p. 397-
1 p.
|
artikel
|
| 61 |
5080. Effect of atmospheric oxygen on evaporated chromium films
|
|
|
1982
|
32 |
7 |
p. 443-444
2 p.
|
artikel
|
| 62 |
5140. Effect of ion current in the collisionless theory of floating ac probe measurements
|
|
|
1982
|
32 |
7 |
p. 450-
1 p.
|
artikel
|
| 63 |
5165. Effect of particle size on the chemisorption and decomposition of carbon monoxide by palladium and nickel clusters
|
|
|
1982
|
32 |
7 |
p. 452-
1 p.
|
artikel
|
| 64 |
5167. Effect of silicon dioxide surface-layer thickness on boron profiles for directly aligned implants into (100) silicon
|
|
|
1982
|
32 |
7 |
p. 452-
1 p.
|
artikel
|
| 65 |
5144. Effect of the turbulent atmosphere on the autocovariance function for a speckle field generated by a laser beam with random pointing error
|
|
|
1982
|
32 |
7 |
p. 450-
1 p.
|
artikel
|
| 66 |
5034. Effect of turbulence on pressure probes
|
|
|
1982
|
32 |
7 |
p. 439-
1 p.
|
artikel
|
| 67 |
5091. Effects of argon pressure and substrate temperature on the structure and properties of sputtered copper films
|
|
|
1982
|
32 |
7 |
p. 445-
1 p.
|
artikel
|
| 68 |
5075. Effects of oxygen and chlorine on the interfacial crystallization of amorphous selenium films
|
|
|
1982
|
32 |
7 |
p. 443-
1 p.
|
artikel
|
| 69 |
5251. Effects of surface relaxation on the electronic structure of ZnO (1010)
|
|
|
1982
|
32 |
7 |
p. 461-
1 p.
|
artikel
|
| 70 |
5086. Electrical properties of SiO2 and Si3N4 dielectric layers on InP
|
|
|
1982
|
32 |
7 |
p. 444-
1 p.
|
artikel
|
| 71 |
5073. Electrical transport properties of p-type Pb1—xCdxTe thin films
|
|
|
1982
|
32 |
7 |
p. 443-
1 p.
|
artikel
|
| 72 |
5220. Electron damage in ZnSe using transmission electron microscopy
|
|
|
1982
|
32 |
7 |
p. 458-
1 p.
|
artikel
|
| 73 |
5229. Electron emission from molybdenum under ion bombardment
|
|
|
1982
|
32 |
7 |
p. 459-
1 p.
|
artikel
|
| 74 |
5088. Electron spectroscopy of ion beam and hydrocarbon plasma generated diamondlike carbon films
|
|
|
1982
|
32 |
7 |
p. 444-
1 p.
|
artikel
|
| 75 |
5069. Electron transport studies in SiO2 films excited by a pulsed electron beam. (GB)
|
|
|
1982
|
32 |
7 |
p. 442-
1 p.
|
artikel
|
| 76 |
5087. Emission of electrons and positive ions upon fracture of oxide films
|
|
|
1982
|
32 |
7 |
p. 444-
1 p.
|
artikel
|
| 77 |
5046. Evaluation of ISABELLE full cell ultra-high vacuum system
|
|
|
1982
|
32 |
7 |
p. 440-
1 p.
|
artikel
|
| 78 |
5158. Experimental and calculated depth distribution of damage and projected ranges of 20 keV 4He ions in nickel
|
|
|
1982
|
32 |
7 |
p. 451-452
2 p.
|
artikel
|
| 79 |
5175. Fabrication of P+-N-N+ silicon solar cells by simultaneous diffusion of boron and phosphorus into silicon through silicon dioxide
|
|
|
1982
|
32 |
7 |
p. 453-
1 p.
|
artikel
|
| 80 |
5157. Factors influencing the formation and growth of faulted loops in BF2 +-implanted silicon
|
|
|
1982
|
32 |
7 |
p. 451-
1 p.
|
artikel
|
| 81 |
5207. Faraday cup analysis of ion beams produced by a dense plasma focus
|
|
|
1982
|
32 |
7 |
p. 456-
1 p.
|
artikel
|
| 82 |
5084. Film thickness uniformity of sputter deposited layers-comparison between calculation and practical results
|
|
|
1982
|
32 |
7 |
p. 444-
1 p.
|
artikel
|
| 83 |
5118. Flux-limited heat flow in a double plasma device
|
|
|
1982
|
32 |
7 |
p. 448-
1 p.
|
artikel
|
| 84 |
5044. Formation time and heating mechanism of arc cathode craters in vacuum
|
|
|
1982
|
32 |
7 |
p. 440-
1 p.
|
artikel
|
| 85 |
5241. GaAs-oxide interface states: Gigantic photoionization via Augerlike process
|
|
|
1982
|
32 |
7 |
p. 460-
1 p.
|
artikel
|
| 86 |
5038. Gauge calibration system based on piston manometer
|
|
|
1982
|
32 |
7 |
p. 439-
1 p.
|
artikel
|
| 87 |
5211. Geometrical effects on the beamlet optics of a two-stage ion accelerator
|
|
|
1982
|
32 |
7 |
p. 457-
1 p.
|
artikel
|
| 88 |
5074. Gold-aluminium thin-film interactions and compound formation
|
|
|
1982
|
32 |
7 |
p. 443-
1 p.
|
artikel
|
| 89 |
5168. Gold gettering in silicon by phosphorous diffusion and argon implantation: Mechanisms and limitations
|
|
|
1982
|
32 |
7 |
p. 452-453
2 p.
|
artikel
|
| 90 |
5223. Grain boundary potential determination in polycrystalline silicon by the scanning light spot technique
|
|
|
1982
|
32 |
7 |
p. 458-
1 p.
|
artikel
|
| 91 |
5067. Growth and thermal stability of single crystal metastable semiconducting (GaSb)1-x Ge x films. (GB)
|
|
|
1982
|
32 |
7 |
p. 442-
1 p.
|
artikel
|
| 92 |
5184. Growth of dislocation-free silicon films by molecular beam epitaxy (MBE)
|
|
|
1982
|
32 |
7 |
p. 454-
1 p.
|
artikel
|
| 93 |
5189. Heteroepitaxial silicon growth on polycrystalline MoSi2
|
|
|
1982
|
32 |
7 |
p. 455-
1 p.
|
artikel
|
| 94 |
5200. High density cascade effects
|
|
|
1982
|
32 |
7 |
p. 456-
1 p.
|
artikel
|
| 95 |
5121. High power heating in the ion cyclotron range of frequencies in the Wisconsin Tokapole II
|
|
|
1982
|
32 |
7 |
p. 448-
1 p.
|
artikel
|
| 96 |
5202. H− ion formation from a surface conversion type ion source
|
|
|
1982
|
32 |
7 |
p. 456-
1 p.
|
artikel
|
| 97 |
5126. Hollow cathode startup using a microplasma discharge
|
|
|
1982
|
32 |
7 |
p. 448-
1 p.
|
artikel
|
| 98 |
5186. Improved properties of In x Ga1 x As layers grown by molecular-beam epitaxy on InP substrates
|
|
|
1982
|
32 |
7 |
p. 454-
1 p.
|
artikel
|
| 99 |
5115. Impurity studies in fusion devices using laser-fluorescence spectroscopy
|
|
|
1982
|
32 |
7 |
p. 447-
1 p.
|
artikel
|
| 100 |
5155. In-depth profiles of deep-trap concentration in Fe-implanted n-type silicon
|
|
|
1982
|
32 |
7 |
p. 451-
1 p.
|
artikel
|
| 101 |
5094. Influence of bias sputtered glass on avalanche breakdown
|
|
|
1982
|
32 |
7 |
p. 445-
1 p.
|
artikel
|
| 102 |
5192. Influence of ion radiation on surface reactivity
|
|
|
1982
|
32 |
7 |
p. 455-
1 p.
|
artikel
|
| 103 |
5208. Influence of spherical and chromatic aberrations on the half-radius of an electron beam
|
|
|
1982
|
32 |
7 |
p. 456-
1 p.
|
artikel
|
| 104 |
5097. Influence of the bombarding angle on the sputtering yield of heavy atomic and molecular ion bombardment of Ag and Au
|
|
|
1982
|
32 |
7 |
p. 445-
1 p.
|
artikel
|
| 105 |
5161. Interference enhanced Raman scattering study of the interfacial reaction of PD on a-Si:H
|
|
|
1982
|
32 |
7 |
p. 452-
1 p.
|
artikel
|
| 106 |
5131. Intermolecular potentials from proton spin-lattice relaxation time in H2 AR and H2-N2 gas mixtures
|
|
|
1982
|
32 |
7 |
p. 449-
1 p.
|
artikel
|
| 107 |
5218. Intrinsic and defect surface states on single-crystal metal oxides
|
|
|
1982
|
32 |
7 |
p. 457-458
2 p.
|
artikel
|
| 108 |
5201. Ion beam characteristics of a gas-filled accelerator tube
|
|
|
1982
|
32 |
7 |
p. 456-
1 p.
|
artikel
|
| 109 |
5159. Ion beam characterization of the GaAs-GaAs oxide interface for plasma and anodic oxides
|
|
|
1982
|
32 |
7 |
p. 452-
1 p.
|
artikel
|
| 110 |
5206. Ion beam extraction from a plasma with aberration reduction by method of mutual exclusion
|
|
|
1982
|
32 |
7 |
p. 456-
1 p.
|
artikel
|
| 111 |
5147. Ion beam oxidation
|
|
|
1982
|
32 |
7 |
p. 450-
1 p.
|
artikel
|
| 112 |
5239. Ion channeling and Auger electron spectroscopy study of Sb-diffused Pb1 x Sn x Te crystals
|
|
|
1982
|
32 |
7 |
p. 460-
1 p.
|
artikel
|
| 113 |
5181. Ion implantation and low-temperature epitaxial regrowth of GaAs
|
|
|
1982
|
32 |
7 |
p. 454-
1 p.
|
artikel
|
| 114 |
5103. Ion implantation and sputtering in the presence of reactive gases: Bombardment-induced incorporation of oxygen and related phenomena
|
|
|
1982
|
32 |
7 |
p. 446-
1 p.
|
artikel
|
| 115 |
5082. Ion plating and ionization
|
|
|
1982
|
32 |
7 |
p. 444-
1 p.
|
artikel
|
| 116 |
5153. Laser annealing to produce ferroelectric-phase PbTiO3 thin films
|
|
|
1982
|
32 |
7 |
p. 451-
1 p.
|
artikel
|
| 117 |
5205. Laser cooling of heavy-ion beams
|
|
|
1982
|
32 |
7 |
p. 456-
1 p.
|
artikel
|
| 118 |
5060. Leak-detection in chemical plants
|
|
|
1982
|
32 |
7 |
p. 441-
1 p.
|
artikel
|
| 119 |
5061. Leak-detection in chemical plants with helium mass-spectrometer detectors
|
|
|
1982
|
32 |
7 |
p. 441-442
2 p.
|
artikel
|
| 120 |
LEED intensity measurements by an improved Faraday cup collector
|
Bechtold, HJ
|
|
1982
|
32 |
7 |
p. 425-431
7 p.
|
artikel
|
| 121 |
5248. LEED investigation of extended defects at the surface of Ge films grown epitaxially on GaAs(110)
|
|
|
1982
|
32 |
7 |
p. 461-
1 p.
|
artikel
|
| 122 |
5134. Levels in 149Nd studied with the (d,t) reaction
|
|
|
1982
|
32 |
7 |
p. 449-
1 p.
|
artikel
|
| 123 |
5233. Low energy ion scattering (LEIS) and the compositional and structural analysis of solid surfaces. Part I
|
|
|
1982
|
32 |
7 |
p. 459-
1 p.
|
artikel
|
| 124 |
5191. Low-temperature annealing and hydrogenation of defects at the SiSiO2 interface
|
|
|
1982
|
32 |
7 |
p. 455-
1 p.
|
artikel
|
| 125 |
5188. Low-temperature redistribution and gettering of oxygen in silicon
|
|
|
1982
|
32 |
7 |
p. 454-455
2 p.
|
artikel
|
| 126 |
5203. Magnetic effects in high current ion beams
|
|
|
1982
|
32 |
7 |
p. 456-
1 p.
|
artikel
|
| 127 |
5108. Magnetron sputtering of solar coatings inside tubes
|
|
|
1982
|
32 |
7 |
p. 447-
1 p.
|
artikel
|
| 128 |
5056. Mass spectrometric analyser for individual aerosol particles
|
|
|
1982
|
32 |
7 |
p. 441-
1 p.
|
artikel
|
| 129 |
5209. Mass transport in liquid gallium ion beam sources
|
|
|
1982
|
32 |
7 |
p. 456-457
2 p.
|
artikel
|
| 130 |
5081. Mechanical and tribological behaviour of ion plated soft metallic coatings
|
|
|
1982
|
32 |
7 |
p. 444-
1 p.
|
artikel
|
| 131 |
5236. Metal/silicon interface formation: The Ni Si and Pd Si systems
|
|
|
1982
|
32 |
7 |
p. 459-
1 p.
|
artikel
|
| 132 |
5100. Microstructure and properties of rf-sputtered amorphous hydrogenated silicon films
|
|
|
1982
|
32 |
7 |
p. 446-
1 p.
|
artikel
|
| 133 |
Models of single crystal sputtering
|
Yurasova, VE
|
|
1982
|
32 |
7 |
p. 399-424
26 p.
|
artikel
|
| 134 |
5171. Modification of a surface oxide due to 4He ion bombardment
|
|
|
1982
|
32 |
7 |
p. 453-
1 p.
|
artikel
|
| 135 |
5185. Molecular beam epitaxy of Ge-GaAs superlattices
|
|
|
1982
|
32 |
7 |
p. 454-
1 p.
|
artikel
|
| 136 |
5204. Molecular beam facility for studying mass spectrometer performance
|
|
|
1982
|
32 |
7 |
p. 456-
1 p.
|
artikel
|
| 137 |
5106. Molecular beam levitator for sputter coating of microspheres
|
|
|
1982
|
32 |
7 |
p. 446-447
2 p.
|
artikel
|
| 138 |
5036. Monte Carlo calculations for free molecular and near-free molecular flow through axially symmetric tubes
|
|
|
1982
|
32 |
7 |
p. 439-
1 p.
|
artikel
|
| 139 |
5068. Morphology of thin superconducting Nb films
|
|
|
1982
|
32 |
7 |
p. 442-
1 p.
|
artikel
|
| 140 |
5195. Neutron transmutation doping of silicon and other semiconducting materials
|
|
|
1982
|
32 |
7 |
p. 455-
1 p.
|
artikel
|
| 141 |
5215. New fluorescence detection system for X-ray absorption spectroscopy
|
|
|
1982
|
32 |
7 |
p. 457-
1 p.
|
artikel
|
| 142 |
5170. New ion implant technique for low-cost solar cell fabrication
|
|
|
1982
|
32 |
7 |
p. 453-
1 p.
|
artikel
|
| 143 |
5048. New series of air-cooled turbomolecular pumps for industry and research to be mounted in any position
|
|
|
1982
|
32 |
7 |
p. 440-
1 p.
|
artikel
|
| 144 |
5227. Novel charged particle analyser for momentum determination in the multichanneling mode. II. Physical realization, performance tests, and sample spectra
|
|
|
1982
|
32 |
7 |
p. 458-
1 p.
|
artikel
|
| 145 |
5119. Numerical simulation of a system for ion temperature measurement by Thomson scattering in a tokamak
|
|
|
1982
|
32 |
7 |
p. 448-
1 p.
|
artikel
|
| 146 |
5127. O5 ions in a low pressure glow discharge of oxygen
|
|
|
1982
|
32 |
7 |
p. 448-449
2 p.
|
artikel
|
| 147 |
5247. On the electronic structure of clean, 2 × 1 reconstructed silicon (001) surfaces
|
|
|
1982
|
32 |
7 |
p. 461-
1 p.
|
artikel
|
| 148 |
5154. On the formation of binary compounds in Au InP system
|
|
|
1982
|
32 |
7 |
p. 451-
1 p.
|
artikel
|
| 149 |
5085. On the properties of ion-beam sputtered CulnSe2 thin films
|
|
|
1982
|
32 |
7 |
p. 444-
1 p.
|
artikel
|
| 150 |
Oxidation of silicon surfaces
|
|
|
1982
|
32 |
7 |
p. 452-
1 p.
|
artikel
|
| 151 |
5163. Oxygen adsorption on the disordered silicon surface
|
|
|
1982
|
32 |
7 |
p. 452-
1 p.
|
artikel
|
| 152 |
5160. Oxygen impurity effects at metal/silicide interfaces: Formation of silicon oxide and suboxides in the Ni Si system
|
|
|
1982
|
32 |
7 |
p. 452-
1 p.
|
artikel
|
| 153 |
5110. Oxygen plasma etching of thick polymer layers
|
|
|
1982
|
32 |
7 |
p. 447-
1 p.
|
artikel
|
| 154 |
5045. Performance of mechanical vacuum pumps in the molecular flow range
|
|
|
1982
|
32 |
7 |
p. 440-
1 p.
|
artikel
|
| 155 |
5071. Positive-ion emission from α-AGI films
|
|
|
1982
|
32 |
7 |
p. 442-443
2 p.
|
artikel
|
| 156 |
5162. Possible oxygen chemisorption configurations on the Si(111) 2 × 1 surface
|
|
|
1982
|
32 |
7 |
p. 452-
1 p.
|
artikel
|
| 157 |
5232. Potentiometric nondestructive testing of surface-hardened materials
|
|
|
1982
|
32 |
7 |
p. 459-
1 p.
|
artikel
|
| 158 |
5098. Preferential sputtering and surface segregation in tungsten—molybdenum alloys
|
|
|
1982
|
32 |
7 |
p. 445-446
2 p.
|
artikel
|
| 159 |
5093. Properties of solar absorbing films produced by an in-line sputter coating plant
|
|
|
1982
|
32 |
7 |
p. 445-
1 p.
|
artikel
|
| 160 |
5049. Pumping of dry air and of saturated air-water vapour mixture with liquid ring vacuum pumps
|
|
|
1982
|
32 |
7 |
p. 440-
1 p.
|
artikel
|
| 161 |
5055. Pyrolysis mass spectrometer for direct sampling of primary products of thermolysis reactions
|
|
|
1982
|
32 |
7 |
p. 441-
1 p.
|
artikel
|
| 162 |
5137. Radiation and spin separation of high energy positrons channeled in bent crystals
|
|
|
1982
|
32 |
7 |
p. 449-
1 p.
|
artikel
|
| 163 |
5190. Radiation effects in crystalline SiO2: The role of aluminium
|
|
|
1982
|
32 |
7 |
p. 455-
1 p.
|
artikel
|
| 164 |
5166. Radiation enhanced diffusion of bromine in sodium chloride crystal
|
|
|
1982
|
32 |
7 |
p. 452-
1 p.
|
artikel
|
| 165 |
5136. Radiation from high energy positrons in a potential of crystal planes
|
|
|
1982
|
32 |
7 |
p. 449-
1 p.
|
artikel
|
| 166 |
5090. Reactive dc high-rate sputtering with the magnetron/plasmatron for industrial applications
|
|
|
1982
|
32 |
7 |
p. 445-
1 p.
|
artikel
|
| 167 |
5183. Recent European developments in MBE
|
|
|
1982
|
32 |
7 |
p. 454-
1 p.
|
artikel
|
| 168 |
5250. Reconstructions of GaAs and AlAs surfaces as a function of metal m As ratio
|
|
|
1982
|
32 |
7 |
p. 461-
1 p.
|
artikel
|
| 169 |
5105. Relations between the orientations of ion bombarded single crystals, resulting surface structures and sputtered spot patterns
|
|
|
1982
|
32 |
7 |
p. 446-
1 p.
|
artikel
|
| 170 |
5076. Reproductibility of vacuum deposited films of amorphous ZnTe
|
|
|
1982
|
32 |
7 |
p. 443-
1 p.
|
artikel
|
| 171 |
5222. Secondary ion emission from binary alloy systems. Part II: Ar+ bombardment with O2 absorption
|
|
|
1982
|
32 |
7 |
p. 458-
1 p.
|
artikel
|
| 172 |
5221. Secondary ion emission from binary alloy systems. Part I: O2 + bombardment
|
|
|
1982
|
32 |
7 |
p. 458-
1 p.
|
artikel
|
| 173 |
5174. Selenium implantation in indium phosphide
|
|
|
1982
|
32 |
7 |
p. 453-
1 p.
|
artikel
|
| 174 |
5187. Shallow PtSi-Si Schottky barrier contacts formed by a multilayer metallization technique
|
|
|
1982
|
32 |
7 |
p. 454-
1 p.
|
artikel
|
| 175 |
5214. Silicide interface stoichiometry
|
|
|
1982
|
32 |
7 |
p. 457-
1 p.
|
artikel
|
| 176 |
5111. Simulation of ion-beam etched pattern profiles
|
|
|
1982
|
32 |
7 |
p. 447-
1 p.
|
artikel
|
| 177 |
Solar selective surfaces
|
Hill, R.
|
|
1982
|
32 |
7 |
p. 463-
1 p.
|
artikel
|
| 178 |
5212. Some experimental facts that indicate the elimination of astigmatism in ion beams with separators using crossed electric and magnetic fields
|
|
|
1982
|
32 |
7 |
p. 457-
1 p.
|
artikel
|
| 179 |
5120. Spectroscopic observations of impurities in Tokapole II discharges
|
|
|
1982
|
32 |
7 |
p. 448-
1 p.
|
artikel
|
| 180 |
5123. Spectrum and energy levels of four-times-ionized niobium
|
|
|
1982
|
32 |
7 |
p. 448-
1 p.
|
artikel
|
| 181 |
5128. Stationary striations in a glow discharge
|
|
|
1982
|
32 |
7 |
p. 449-
1 p.
|
artikel
|
| 182 |
5152. Stoichiometric disturbances in ion implanted compound semiconductors
|
|
|
1982
|
32 |
7 |
p. 451-
1 p.
|
artikel
|
| 183 |
5113. Stopping power measurements in the 20 150 KeV region using thick target backscattering: 1H and 4He on carbon, silicon and gold
|
|
|
1982
|
32 |
7 |
p. 447-
1 p.
|
artikel
|
| 184 |
5112. Strains and photovoltaic response in Ta-sputtered Si metal-insulator-semiconductor solar cells
|
|
|
1982
|
32 |
7 |
p. 447-
1 p.
|
artikel
|
| 185 |
5235. Study of stability of MIS polycryslalline silicon solar cells by Auger electron spectroscopy
|
|
|
1982
|
32 |
7 |
p. 459-
1 p.
|
artikel
|
| 186 |
5217. Surface and interface properties of Zn3P2 solar cells
|
|
|
1982
|
32 |
7 |
p. 457-
1 p.
|
artikel
|
| 187 |
5099. Surface recoil atoms in the angular distribution of sputtered gold under bombardment of monocrystals with ions
|
|
|
1982
|
32 |
7 |
p. 446-
1 p.
|
artikel
|
| 188 |
5244. Surface reconstruction and interface formation in Si and GaAs
|
|
|
1982
|
32 |
7 |
p. 460-
1 p.
|
artikel
|
| 189 |
5242. Surface topography and alignment of liquid crystals on rubbed oxide surfaces
|
|
|
1982
|
32 |
7 |
p. 460-
1 p.
|
artikel
|
| 190 |
5095. The dependence of deposition rate on power input for dc and rf magnetron sputtering
|
|
|
1982
|
32 |
7 |
p. 445-
1 p.
|
artikel
|
| 191 |
5194. The effect of phosphorus ion implantation on molybdenum/silicon contacts
|
|
|
1982
|
32 |
7 |
p. 455-
1 p.
|
artikel
|
| 192 |
5062. The effect of the cold water pressure test on the leakage detection with test gases on a test heat exchanger
|
|
|
1982
|
32 |
7 |
p. 442-
1 p.
|
artikel
|
| 193 |
5176. The electrical properties of sulphur in silicon
|
|
|
1982
|
32 |
7 |
p. 453-
1 p.
|
artikel
|
| 194 |
5178. The influence of tin implantation on the oxidation of iron
|
|
|
1982
|
32 |
7 |
p. 453-
1 p.
|
artikel
|
| 195 |
5133. The level structure of 142Pr deduced from the 141Pr(n,γ)142Pr reaction
|
|
|
1982
|
32 |
7 |
p. 449-
1 p.
|
artikel
|
| 196 |
The new editorial management board
|
|
|
1982
|
32 |
7 |
p. 395-
1 p.
|
artikel
|
| 197 |
5169. Theoretical and experimental investigation of the dynamics of pulsed laser annealing of amorphous silicon
|
|
|
1982
|
32 |
7 |
p. 453-
1 p.
|
artikel
|
| 198 |
Theoretical and experimental study of high fluence germanium implantation into silicon. Contribution of atomic mixing
|
Gras-Marti, A
|
|
1982
|
32 |
7 |
p. 433-437
5 p.
|
artikel
|
| 199 |
5050. Theoretical investigation of the effect of the pump contour on the pumping speed of diffusion pumps
|
|
|
1982
|
32 |
7 |
p. 440-
1 p.
|
artikel
|
| 200 |
5199. Theory of the spatial distribution of defects in radiation cascades in crystals. II. The structure of the cascade region
|
|
|
1982
|
32 |
7 |
p. 456-
1 p.
|
artikel
|
| 201 |
5198. Theory of the spatial distribution of defects in radiation cascades in crystals. I. The cascade of moving atoms
|
|
|
1982
|
32 |
7 |
p. 456-
1 p.
|
artikel
|
| 202 |
5037. The problem of the approximate calculation for molecular conductance
|
|
|
1982
|
32 |
7 |
p. 439-
1 p.
|
artikel
|
| 203 |
5107. The properties of films prepared by the rf sputtering of PTFE and plasma polymerization of some freons
|
|
|
1982
|
32 |
7 |
p. 447-
1 p.
|
artikel
|
| 204 |
5156. The reaction of fluorine atoms with silicon
|
|
|
1982
|
32 |
7 |
p. 451-
1 p.
|
artikel
|
| 205 |
5072. Thermionic emission and atom vaporization of the Gd-B system
|
|
|
1982
|
32 |
7 |
p. 443-
1 p.
|
artikel
|
| 206 |
5070. Thermoelectric effect in ytterbium and samarium films
|
|
|
1982
|
32 |
7 |
p. 442-
1 p.
|
artikel
|
| 207 |
5149. The role of plasma diffusion in heat dissipation during laser annealing
|
|
|
1982
|
32 |
7 |
p. 451-
1 p.
|
artikel
|
| 208 |
5237. The surface energy of Si, GaAs, and GaP
|
|
|
1982
|
32 |
7 |
p. 460-
1 p.
|
artikel
|
| 209 |
5101. The work function of sputter-formed Re-1% Pt
|
|
|
1982
|
32 |
7 |
p. 446-
1 p.
|
artikel
|
| 210 |
5083. Thickness uniformity of evaporated layers in theory and practice
|
|
|
1982
|
32 |
7 |
p. 444-
1 p.
|
artikel
|
| 211 |
5109. Thick zone plate fabrication using reactive sputter etching
|
|
|
1982
|
32 |
7 |
p. 447-
1 p.
|
artikel
|
| 212 |
5138. Total intensity of Kumakhov radiation of channeled positrons and electrons for high energy particles
|
|
|
1982
|
32 |
7 |
p. 449-
1 p.
|
artikel
|
| 213 |
5234. Trace detection in surface microanalysis
|
|
|
1982
|
32 |
7 |
p. 459-
1 p.
|
artikel
|
| 214 |
5116. Transition from diffusion-convection to shealth-convection of a cold Langmuir probe in a moving compressible plasma
|
|
|
1982
|
32 |
7 |
p. 447-448
2 p.
|
artikel
|
| 215 |
5226. Transmission electron microscope study of ion beam annealing effects of ion-implanted and evaporated amorphous silicon
|
|
|
1982
|
32 |
7 |
p. 458-
1 p.
|
artikel
|
| 216 |
5151. Trapping of Sb by TaC and Cu precipitates in ion-implanted Fe
|
|
|
1982
|
32 |
7 |
p. 451-
1 p.
|
artikel
|
| 217 |
5130. Tst of an electronic distribution model with macroscopic measurements performed on a proton-beam-induced neon plasma containing nitrogen impurities
|
|
|
1982
|
32 |
7 |
p. 449-
1 p.
|
artikel
|
| 218 |
5064. Twin Knudsen cell for evaporation investigations
|
|
|
1982
|
32 |
7 |
p. 442-
1 p.
|
artikel
|
| 219 |
5228. Ultrahigh vacuum multipurpose offset manipulator for surface and thin film reaction studies
|
|
|
1982
|
32 |
7 |
p. 458-459
2 p.
|
artikel
|
| 220 |
5042. Ultrashort pulse generation by Nd3+: glass and Nd3+: YAG lasers
|
|
|
1982
|
32 |
7 |
p. 440-
1 p.
|
artikel
|
| 221 |
5079. Uniform evaporated coatings on rotating conical workholders
|
|
|
1982
|
32 |
7 |
p. 443-
1 p.
|
artikel
|
| 222 |
5182. Use of molecular beam epitaxy for the achievement of low resistance intercell contacts in multiband gap solar cells
|
|
|
1982
|
32 |
7 |
p. 454-
1 p.
|
artikel
|
| 223 |
Vacuum group committee report 1981/2
|
Grossart, GS
|
|
1982
|
32 |
7 |
p. 465-
1 p.
|
artikel
|
| 224 |
5193. Vapour phase epitaxy of Cd x Hg1-x Te using organumetallics
|
|
|
1982
|
32 |
7 |
p. 455-
1 p.
|
artikel
|
| 225 |
5146. Variance of intensity for a discrete-spectrum, polychromatic speckle field after propagation through the turbulent atmosphere
|
|
|
1982
|
32 |
7 |
p. 450-
1 p.
|
artikel
|
| 226 |
5035. Viscosity measurements in the presence of electric fields
|
|
|
1982
|
32 |
7 |
p. 439-
1 p.
|
artikel
|
| 227 |
5173. Void formation and denudation in ion-irradiated nickel
|
|
|
1982
|
32 |
7 |
p. 453-
1 p.
|
artikel
|
| 228 |
5180. Volatile metal oxide incorporation in layers of GaAs and Ga1-x Al xAs grown by molecular beam epitaxy
|
|
|
1982
|
32 |
7 |
p. 454-
1 p.
|
artikel
|
Tijdschrift beschrijving