| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A new reference ionization gauge for vacuum pressure measurement in the range 10−5 to 1 Pa
|
Sutton, CM
|
|
1982
|
32 |
5 |
p. 247-251
5 p.
|
artikel
|
| 2 |
A note on the design of vapour traps used with vacuum diffusion pumps
|
Carpenter, LG
|
|
1982
|
32 |
5 |
p. 307-308
2 p.
|
artikel
|
| 3 |
A simple efficient SIMS apparatus for use on accelerator beam lines
|
Bolouri, H
|
|
1982
|
32 |
5 |
p. 293-295
3 p.
|
artikel
|
| 4 |
Automatic control of gas pressure in a vacuum system
|
Lucas, J
|
|
1982
|
32 |
5 |
p. 257-263
7 p.
|
artikel
|
| 5 |
Comparison of two pumping speed measuring methods of oil diffusion pumps
|
Sharma, JKN
|
|
1982
|
32 |
5 |
p. 253-256
4 p.
|
artikel
|
| 6 |
Depth distribution of ion-implanted argon in gadolinium and samarium films
|
Iskanderova, ZA
|
|
1982
|
32 |
5 |
p. 269-275
7 p.
|
artikel
|
| 7 |
Electron beam technology in microelectronic fabrication
|
Lawes, RA
|
|
1982
|
32 |
5 |
p. 309-
1 p.
|
artikel
|
| 8 |
High-speed ion pump with a multipactor cathode—The multipactor ion pump
|
Yokoo, K
|
|
1982
|
32 |
5 |
p. 265-268
4 p.
|
artikel
|
| 9 |
Interactions between co-adsorbed CH4 and CO on tungsten: ESD and flash desorption study
|
López Sancho, MP
|
|
1982
|
32 |
5 |
p. 277-281
5 p.
|
artikel
|
| 10 |
Kryo-Vakuumtecknik: Grundlagen und Anwendungen
|
Yarwood, J
|
|
1982
|
32 |
5 |
p. 309-310
2 p.
|
artikel
|
| 11 |
Plasma etch and deposition monitoring with an oscillating quartz crystal
|
Nyaiesh, AR
|
|
1982
|
32 |
5 |
p. 305-307
3 p.
|
artikel
|
| 12 |
Properties of vapour-quenched metallic boron with A1-type crystal structure
|
Reale, C
|
|
1982
|
32 |
5 |
p. 245-246
2 p.
|
artikel
|
| 13 |
Radio frequency stimulated exoelectron emission from graphite
|
Bose, SK
|
|
1982
|
32 |
5 |
p. 243-244
2 p.
|
artikel
|
| 14 |
Study of molecular flow inside a test dome connected to the same diameter diffusion pump
|
Sharma, JKN
|
|
1982
|
32 |
5 |
p. 283-291
9 p.
|
artikel
|
| 15 |
The deduction of continuously distributed activation energy site populations from tempering schedules
|
Carter, G
|
|
1982
|
32 |
5 |
p. 233-241
9 p.
|
artikel
|
| 16 |
The rf voltage/current characteristics and related de negative bias properties of an electrotech flat bed plasma etcher
|
Morgan, RA
|
|
1982
|
32 |
5 |
p. 297-303
7 p.
|
artikel
|
| 17 |
Thermal outgassing properties of mechanically polished and of sand- and bead-blasted Inconel 600 surfaces up to 500°C
|
Reiter, F
|
|
1982
|
32 |
5 |
p. 227-232
6 p.
|
artikel
|
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