nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
Adherence of ion beam sputter deposited metal films on H-13 steel
|
|
|
1982 |
32 |
4 |
p. 214- 1 p. |
artikel |
2 |
4973. A first order diffusion approximation to atomic redistribution during ion bombardment of solids, II. Finite range approximation
|
|
|
1982 |
32 |
4 |
p. 218- 1 p. |
artikel |
3 |
4976. A gap reduction technique for obtaining submicron geometries utilizing redeposition effect
|
|
|
1982 |
32 |
4 |
p. 219- 1 p. |
artikel |
4 |
5021. Analysis of low-energy electron diffraction intensities from ZnS(110)
|
|
|
1982 |
32 |
4 |
p. 223- 1 p. |
artikel |
5 |
4887. An improved controller for mercury diffusion pumps
|
|
|
1982 |
32 |
4 |
p. 209- 1 p. |
artikel |
6 |
4891. A nonevaporable low temperature activatable getter material
|
|
|
1982 |
32 |
4 |
p. 210- 1 p. |
artikel |
7 |
4974. A novel technique for metal-silicide formation
|
|
|
1982 |
32 |
4 |
p. 218- 1 p. |
artikel |
8 |
4912. Anti-reflection coatings for thin-film polycrystalline CdS/Cu2S solar cells
|
|
|
1982 |
32 |
4 |
p. 212- 1 p. |
artikel |
9 |
4895. Application of a simple automatic null method for vapour pressure measurements by the torsion-Knudsen effusion-recoil technique
|
|
|
1982 |
32 |
4 |
p. 210- 1 p. |
artikel |
10 |
4892. A simple graphical method of pressure determination in a McLeod gauge.
|
|
|
1982 |
32 |
4 |
p. 210- 1 p. |
artikel |
11 |
4868. A small-scale cw HF laser based on a hollow-cathode discharge
|
|
|
1982 |
32 |
4 |
p. 208- 1 p. |
artikel |
12 |
5000. A study of the initial oxidation of polycrystalline Si using surface analysis techniques
|
|
|
1982 |
32 |
4 |
p. 221- 1 p. |
artikel |
13 |
5032. Atomic structure of laser annealed Si(111)(1 × 1)
|
|
|
1982 |
32 |
4 |
p. 224- 1 p. |
artikel |
14 |
4942. Atom probe analysis of rf-sputtered a-Si:H films
|
|
|
1982 |
32 |
4 |
p. 215- 1 p. |
artikel |
15 |
4816. A TSTA compound cryopump
|
|
|
1982 |
32 |
4 |
p. 208- 1 p. |
artikel |
16 |
4996. A two-dimensional velocity analyser for electrons produced in laboratory plasma experiments
|
|
|
1982 |
32 |
4 |
p. 221- 1 p. |
artikel |
17 |
5023. Auger analysis of surface deposits formed by exposure to plasma discharges in Doublet III
|
|
|
1982 |
32 |
4 |
p. 223- 1 p. |
artikel |
18 |
4997. Auger electron spectroscopy (AES) for surface analysis
|
|
|
1982 |
32 |
4 |
p. 221- 1 p. |
artikel |
19 |
5001. Auger lineshapes of solid surfaces—Atomic, bandlike, or something else?
|
|
|
1982 |
32 |
4 |
p. 221- 1 p. |
artikel |
20 |
4995. A velocity filter for ions of low energy
|
|
|
1982 |
32 |
4 |
p. 220- 1 p. |
artikel |
21 |
4982. Beam source for moderately fast neutral alkali atoms
|
|
|
1982 |
32 |
4 |
p. 219- 1 p. |
artikel |
22 |
4987. Beams steering and diffraction of magnetostatic backward volume waves
|
|
|
1982 |
32 |
4 |
p. 220- 1 p. |
artikel |
23 |
4871. Buried heterostructure lasers in the GaInAsP system: design
|
|
|
1982 |
32 |
4 |
p. 208- 1 p. |
artikel |
24 |
5007. Characterization of thin films for laser systems using surface analytical techniques
|
|
|
1982 |
32 |
4 |
p. 221-222 2 p. |
artikel |
25 |
5009. Chemical effects in ion scattering spectroscopy
|
|
|
1982 |
32 |
4 |
p. 222- 1 p. |
artikel |
26 |
5024. Chemical information from Auger electron spectroscopy
|
|
|
1982 |
32 |
4 |
p. 223- 1 p. |
artikel |
27 |
5002. Co-adsorbed phases of hydrogen and oxygen on W(001)
|
|
|
1982 |
32 |
4 |
p. 221- 1 p. |
artikel |
28 |
4946. Confinement studies on a plasma generated by CO2 laser irradiation of isolated D2 pellets within the CLEO stellarator
|
|
|
1982 |
32 |
4 |
p. 215-216 2 p. |
artikel |
29 |
4985. Continuous flow reflux oven as the source of an effusive molecular Cs beam
|
|
|
1982 |
32 |
4 |
p. 220- 1 p. |
artikel |
30 |
4939. Control system dynamics using glow discharge mass spectroscopy for thin film sputtering
|
|
|
1982 |
32 |
4 |
p. 215- 1 p. |
artikel |
31 |
4961. Critical curves for implanted garnet films in the presence of a demagnetizing field
|
|
|
1982 |
32 |
4 |
p. 217- 1 p. |
artikel |
32 |
4898. Cryopumped beam mass spectrometry
|
|
|
1982 |
32 |
4 |
p. 211- 1 p. |
artikel |
33 |
4992. CW far-infrared laser-scattering apparatus for plasma wave studies
|
|
|
1982 |
32 |
4 |
p. 220- 1 p. |
artikel |
34 |
4888. Cyclic pressure fluctuations above rotary pumps and their effects on pumping speed measurements
|
|
|
1982 |
32 |
4 |
p. 210- 1 p. |
artikel |
35 |
4972. Defect formation in heavily doped Si upon irradiation
|
|
|
1982 |
32 |
4 |
p. 218- 1 p. |
artikel |
36 |
4938. Dependence of the surface morphology of copper coated laser fusion targets on the dc sputter source
|
|
|
1982 |
32 |
4 |
p. 215- 1 p. |
artikel |
37 |
4879. Design and preliminary tests of the liquid helium cooled MFTF cryopumping system
|
|
|
1982 |
32 |
4 |
p. 209- 1 p. |
artikel |
38 |
4967. Detection of residual damage in 75As implanted silicon single crystal by secondary ion mass spectrometry
|
|
|
1982 |
32 |
4 |
p. 218- 1 p. |
artikel |
39 |
Diagnostic system of the Lawrence Livermore National Laboratory two-stage light-gas gun
|
|
|
1982 |
32 |
4 |
p. 220- 1 p. |
artikel |
40 |
4870. Diffraction losses and mode structure of equivalent TEM00 optical resonators
|
|
|
1982 |
32 |
4 |
p. 208- 1 p. |
artikel |
41 |
4914. Digital thickness monitor using only one crystal oscillator
|
|
|
1982 |
32 |
4 |
p. 212- 1 p. |
artikel |
42 |
Directory of manufacturers of vacuum plant, components and associated equipment in the UK—1982
|
Yarwood, J |
|
1982 |
32 |
4 |
p. 185-205 21 p. |
artikel |
43 |
4947. Dislocations in turbulent ionization waves
|
|
|
1982 |
32 |
4 |
p. 216- 1 p. |
artikel |
44 |
4878. Doublet III neutral beam cryopumping system
|
|
|
1982 |
32 |
4 |
p. 209- 1 p. |
artikel |
45 |
4889. Effect of hydrogen glow discharge conditioning on Zr/Al getter pumps
|
|
|
1982 |
32 |
4 |
p. 210- 1 p. |
artikel |
46 |
4935. Effect of ion bombardment during deposition on magnetic film properties
|
|
|
1982 |
32 |
4 |
p. 214- 1 p. |
artikel |
47 |
4966. Effect of ion implantation on CdSe thin film transistors
|
|
|
1982 |
32 |
4 |
p. 218- 1 p. |
artikel |
48 |
5014. Effect of oxygen implantation upon secondary ion yields
|
|
|
1982 |
32 |
4 |
p. 222- 1 p. |
artikel |
49 |
Effects of annealing in Hg vapour on the properties of rf-sputtered thin films of (Hg1-x Cd x)Te
|
|
|
1982 |
32 |
4 |
p. 213- 1 p. |
artikel |
50 |
4962. Effects of dosage and annealing on the magnetic behaviour of ion- implanted garnet films
|
|
|
1982 |
32 |
4 |
p. 217- 1 p. |
artikel |
51 |
Effects of sputtering on the surface composition of niobium oxides
|
|
|
1982 |
32 |
4 |
p. 214- 1 p. |
artikel |
52 |
4953. Electron energy distribution in CO and HeCO discharges: I
|
|
|
1982 |
32 |
4 |
p. 216- 1 p. |
artikel |
53 |
5030. Electronic states of Si(111) surfaces
|
|
|
1982 |
32 |
4 |
p. 224- 1 p. |
artikel |
54 |
4999. Electron microscopy study of the ferroelectric domains and domain wall structure in PbZr0.52 Ti0.48 O3
|
|
|
1982 |
32 |
4 |
p. 221- 1 p. |
artikel |
55 |
Energy spectrum diagnostics for collectively accelerated proton beams
|
|
|
1982 |
32 |
4 |
p. 220- 1 p. |
artikel |
56 |
4980. Field-emission liquid-metal ion source and triode ion gun
|
|
|
1982 |
32 |
4 |
p. 219- 1 p. |
artikel |
57 |
5508. Fourier analysis of linear surface kinetics in reactive molecular beam scattering
|
|
|
1982 |
32 |
4 |
p. 222- 1 p. |
artikel |
58 |
4860. Free convection flow through a porous medium bounded by a vertical surface
|
|
|
1982 |
32 |
4 |
p. 207- 1 p. |
artikel |
59 |
4862. Gas flow in the column of a TIG welding arc
|
|
|
1982 |
32 |
4 |
p. 207- 1 p. |
artikel |
60 |
4940. Glow discharge mass spectrometry of sputtered tantalum nitride
|
|
|
1982 |
32 |
4 |
p. 215- 1 p. |
artikel |
61 |
4909. Grain boundary diffusion in thin film couples
|
|
|
1982 |
32 |
4 |
p. 212- 1 p. |
artikel |
62 |
4948. High-energy electron distribution in an electron-beam-generated argon plasma
|
|
|
1982 |
32 |
4 |
p. 216- 1 p. |
artikel |
63 |
4971. High-purity thermal treatment of silicon
|
|
|
1982 |
32 |
4 |
p. 218- 1 p. |
artikel |
64 |
High rate deposition of transparent conducting films by modified reactive planar magnetron sputtering of Cd2Sn alloy
|
|
|
1982 |
32 |
4 |
p. 213- 1 p. |
artikel |
65 |
5015. Hydrogen depth profiling using SIMS—Problems and their solutions
|
|
|
1982 |
32 |
4 |
p. 222- 1 p. |
artikel |
66 |
4945. Hydrogen isotope analysis by quadrupole mass spectrometry
|
|
|
1982 |
32 |
4 |
p. 215- 1 p. |
artikel |
67 |
4963. Implantability of small bubble diameter garnet films
|
|
|
1982 |
32 |
4 |
p. 217- 1 p. |
artikel |
68 |
4933. Improved step coverage by ion beam resputtering
|
|
|
1982 |
32 |
4 |
p. 214- 1 p. |
artikel |
69 |
4915. Impurities-related memory traps in silicon nitride thin films
|
|
|
1982 |
32 |
4 |
p. 212- 1 p. |
artikel |
70 |
Indium doped cadmium sulfide films deposited by cylindrical magnetron reactive sputtering
|
|
|
1982 |
32 |
4 |
p. 213- 1 p. |
artikel |
71 |
4957. Influence of ion bombardment and intermediate layers on the adherence of gold to oxide substrates
|
|
|
1982 |
32 |
4 |
p. 217- 1 p. |
artikel |
72 |
4861. Influence of velocity gradients on measurements of velocity and streamwise vorticity with hot-wire X-array probes
|
|
|
1982 |
32 |
4 |
p. 207- 1 p. |
artikel |
73 |
4944. In-line production system for sputter deposition of graded index solar absorbing films
|
|
|
1982 |
32 |
4 |
p. 215- 1 p. |
artikel |
74 |
4955. Instrument to measure stratospheric ozone with high resolution
|
|
|
1982 |
32 |
4 |
p. 216- 1 p. |
artikel |
75 |
Internal stresses in amorphous silicon films deposited by cylindrical magnetron sputtering using Ne, Ar, Kr, Xe and Ar + H2
|
|
|
1982 |
32 |
4 |
p. 213- 1 p. |
artikel |
76 |
4873. Interrupted pumpdown of a vacuum system
|
|
|
1982 |
32 |
4 |
p. 208- 1 p. |
artikel |
77 |
5011. Intrinsic secondary ion emission from binary alloys during Ar+ bombardment
|
|
|
1982 |
32 |
4 |
p. 222- 1 p. |
artikel |
78 |
4959. Investigation of plasma etching mechanisms using beams of reactive gas ions
|
|
|
1982 |
32 |
4 |
p. 217- 1 p. |
artikel |
79 |
Ion beam deposition of special film structures
|
|
|
1982 |
32 |
4 |
p. 214- 1 p. |
artikel |
80 |
4977. Ion-beam-induced-current (IBIC) monitoring of uniform and selective ion-etching processes in layered structures
|
|
|
1982 |
32 |
4 |
p. 219- 1 p. |
artikel |
81 |
4978. Ion extraction from a plasma
|
|
|
1982 |
32 |
4 |
p. 219- 1 p. |
artikel |
82 |
4969. Ion implanted species dependence in silicon oxidation
|
|
|
1982 |
32 |
4 |
p. 218- 1 p. |
artikel |
83 |
4920. Ionization of atomic clusters sputterd from TiO2 and SrTiO3 surfaces
|
|
|
1982 |
32 |
4 |
p. 213- 1 p. |
artikel |
84 |
4988. Large acceptance angle retarding-potential analysers
|
|
|
1982 |
32 |
4 |
p. 220- 1 p. |
artikel |
85 |
4965. Laser annealing and epitaxy
|
|
|
1982 |
32 |
4 |
p. 217-218 2 p. |
artikel |
86 |
4964. Laser annealing of epitaxial garnet films under controlled atmospheres
|
|
|
1982 |
32 |
4 |
p. 217- 1 p. |
artikel |
87 |
5020. LEED intensity analysis of the structure of Al on GaAs(110)
|
|
|
1982 |
32 |
4 |
p. 223- 1 p. |
artikel |
88 |
4984. Liquid metal source of gold ions
|
|
|
1982 |
32 |
4 |
p. 219- 1 p. |
artikel |
89 |
4908. Low pressure CVD of III-V compounds
|
|
|
1982 |
32 |
4 |
p. 212- 1 p. |
artikel |
90 |
5016. Magnetically suspended cross-correlation chopper in molecular beam- surface experiments
|
|
|
1982 |
32 |
4 |
p. 223- 1 p. |
artikel |
91 |
4993. Measurement of ion energy distribution in an orbitron device
|
|
|
1982 |
32 |
4 |
p. 220- 1 p. |
artikel |
92 |
4921. Measurement of neutral and ion sputtering yields by matrix isolation spectroscopy
|
|
|
1982 |
32 |
4 |
p. 213- 1 p. |
artikel |
93 |
4896. Measurement of neutral gas density with ionization gauges in plasma physics research
|
|
|
1982 |
32 |
4 |
p. 210- 1 p. |
artikel |
94 |
4884. Mechanical boosters on clean or corrosive applications
|
|
|
1982 |
32 |
4 |
p. 209- 1 p. |
artikel |
95 |
4917. Mechanical properties of chemical vapour deposited coatings for fusion reactor application
|
|
|
1982 |
32 |
4 |
p. 212- 1 p. |
artikel |
96 |
4937. Metal coatings for laser fusion targets by electroplating
|
|
|
1982 |
32 |
4 |
p. 215- 1 p. |
artikel |
97 |
4906. Metallic coating of microspheres
|
|
|
1982 |
32 |
4 |
p. 211- 1 p. |
artikel |
98 |
4968. Microstructure of beam-annealed silicon
|
|
|
1982 |
32 |
4 |
p. 218- 1 p. |
artikel |
99 |
4899. Molecular and radiation transmissivities of chevron type baffles for cryopumping
|
|
|
1982 |
32 |
4 |
p. 211- 1 p. |
artikel |
100 |
5010. Molecular secondary ion mass spectrometry (SIMS)
|
|
|
1982 |
32 |
4 |
p. 222- 1 p. |
artikel |
101 |
4941. Mössbauer characterization of reactively sputtered iron nitride films
|
|
|
1982 |
32 |
4 |
p. 215- 1 p. |
artikel |
102 |
5017. New type of position sensitive photomultiplier
|
|
|
1982 |
32 |
4 |
p. 223- 1 p. |
artikel |
103 |
4894. Nitrogen sensitivities of a sample of commercial hot cathode ionization gauge tubes
|
|
|
1982 |
32 |
4 |
p. 210- 1 p. |
artikel |
104 |
4890. Nonevaporable getter for ion beam fusion
|
|
|
1982 |
32 |
4 |
p. 210- 1 p. |
artikel |
105 |
4952. Nonlinear dispersion relation of finite amplitude ionization waves: I. Theory and numerical calculation
|
|
|
1982 |
32 |
4 |
p. 216- 1 p. |
artikel |
106 |
Novel charged particle analyser for momentum determination in the multichanneling mode: I. Design aspects and electron/ion optical properties
|
|
|
1982 |
32 |
4 |
p. 220- 1 p. |
artikel |
107 |
4093. Novel device structures by molecular beam epitaxy
|
|
|
1982 |
32 |
4 |
p. 211- 1 p. |
artikel |
108 |
4867. Oscillating feedback currents in cylindrical electron multiplier
|
|
|
1982 |
32 |
4 |
p. 208- 1 p. |
artikel |
109 |
4913. Oscillatory behaviour of resistivity with thickness in bismuth thin films
|
|
|
1982 |
32 |
4 |
p. 212- 1 p. |
artikel |
110 |
5029. Oxidation of Si(111), 7 × 7 and 2 × 1: A comparison
|
|
|
1982 |
32 |
4 |
p. 224- 1 p. |
artikel |
111 |
Oxygen induced preferred orientation of dc sputtered platinum
|
|
|
1982 |
32 |
4 |
p. 214- 1 p. |
artikel |
112 |
4975. Pattern profile control utilizing shadowing effect in oblique ion-beam etching
|
|
|
1982 |
32 |
4 |
p. 218- 1 p. |
artikel |
113 |
4897. Performance of a simplified directional detector for gas molecules
|
|
|
1982 |
32 |
4 |
p. 210-211 2 p. |
artikel |
114 |
4877. Performance of BNL-TSTA compound cryopump
|
|
|
1982 |
32 |
4 |
p. 208-209 2 p. |
artikel |
115 |
4979. Plasma dynamics of an arc-driven, electromagnetic, projectile accelerator
|
|
|
1982 |
32 |
4 |
p. 219- 1 p. |
artikel |
116 |
4994. Plasma probe system with automatic sweep adjustment
|
|
|
1982 |
32 |
4 |
p. 220- 1 p. |
artikel |
117 |
4950. Plasma production by staged laser irradiation of mm-size deuterium pellets
|
|
|
1982 |
32 |
4 |
p. 216- 1 p. |
artikel |
118 |
4907. Plastic coating of microsphere substrates
|
|
|
1982 |
32 |
4 |
p. 211- 1 p. |
artikel |
119 |
4902. Platinum silicide formation under ultrahigh vacuum and controlled impurity ambients
|
|
|
1982 |
32 |
4 |
p. 211- 1 p. |
artikel |
120 |
4970. Pn junction formation in CdTe by ion implantation and pulsed ruby laser annealing
|
|
|
1982 |
32 |
4 |
p. 218- 1 p. |
artikel |
121 |
4986. Polarized He (23S) thermal metastable atom source
|
|
|
1982 |
32 |
4 |
p. 220- 1 p. |
artikel |
122 |
Practical aspects of constructing, operating amd maintaining rotary vane and diffusion-pumped systems
|
|
|
1982 |
32 |
4 |
p. 208- 1 p. |
artikel |
123 |
4934. Preferential sputtering from disordered GaAs
|
|
|
1982 |
32 |
4 |
p. 214- 1 p. |
artikel |
124 |
4981. Preliminary experiment on the Lambdatron ion source for the JT-60 neutral beam injector
|
|
|
1982 |
32 |
4 |
p. 219- 1 p. |
artikel |
125 |
4886. Pumped oil feed systems for rotary vacuum pumps
|
|
|
1982 |
32 |
4 |
p. 209- 1 p. |
artikel |
126 |
4881. Pumping behaviour of sputter ion pumps
|
|
|
1982 |
32 |
4 |
p. 209- 1 p. |
artikel |
127 |
4880. Pumping efficiencies of three-dimensional cryopumping structures
|
|
|
1982 |
32 |
4 |
p. 209- 1 p. |
artikel |
128 |
4883. Pumping of corrosive or hazardous gases with turbomolecular and oil-filled rotary vane backing pumps
|
|
|
1982 |
32 |
4 |
p. 209- 1 p. |
artikel |
129 |
5022. Quantitative analysis of iron oxides using Auger electron spectroscopy combined with ion sputtering
|
|
|
1982 |
32 |
4 |
p. 223- 1 p. |
artikel |
130 |
4929. Reactively sputter-deposited high-emissivity tungsten carbide/carbon coatings
|
|
|
1982 |
32 |
4 |
p. 214- 1 p. |
artikel |
131 |
4936. Recent advances in Pt coating of microspheres by a batch magnetron sputtering process
|
|
|
1982 |
32 |
4 |
p. 214-215 2 p. |
artikel |
132 |
5025. Resonant satellites in photoemission and Auger spectra of d-band metals
|
|
|
1982 |
32 |
4 |
p. 223-224 2 p. |
artikel |
133 |
5004. Scanning Auger microprobe study of gold-nickel-copper diffusion in thin films
|
|
|
1982 |
32 |
4 |
p. 221- 1 p. |
artikel |
134 |
5013. Secondary ion mass spectrometry analysis of semiconductor layers
|
|
|
1982 |
32 |
4 |
p. 222- 1 p. |
artikel |
135 |
5012. Secondary ion mass spectrometry and Rutherford backscattering spectroscopy for the analysis of thin films
|
|
|
1982 |
32 |
4 |
p. 222- 1 p. |
artikel |
136 |
4900. Selection and evaluation of an ultrahigh vacuum gate valve for ISABELLE beam line vacuum system
|
|
|
1982 |
32 |
4 |
p. 211- 1 p. |
artikel |
137 |
4904. Semiconducting behaviour in antimony-doped bismuth films
|
|
|
1982 |
32 |
4 |
p. 211- 1 p. |
artikel |
138 |
4918. SiCAl O compound coatings on molybdenum for application to fusion reactor first wall components
|
|
|
1982 |
32 |
4 |
p. 213- 1 p. |
artikel |
139 |
5019. Si(111): Ni surface studies by AES, UPS, LEED, and ion scattering
|
|
|
1982 |
32 |
4 |
p. 223- 1 p. |
artikel |
140 |
4983. Source plasma characteristics of the coaxial duoPIGatron ion source
|
|
|
1982 |
32 |
4 |
p. 219- 1 p. |
artikel |
141 |
4943. Sputtered iron oxide/silicon heterostructures
|
|
|
1982 |
32 |
4 |
p. 215- 1 p. |
artikel |
142 |
Sputtered TiW/Au Schottky barriers on GaAs
|
|
|
1982 |
32 |
4 |
p. 213- 1 p. |
artikel |
143 |
4911. Steam corrosion of glass under polymer thin films
|
|
|
1982 |
32 |
4 |
p. 212- 1 p. |
artikel |
144 |
4872. Steam ejector-condenser—stage 1 of a differential vacuum pumping station
|
|
|
1982 |
32 |
4 |
p. 208- 1 p. |
artikel |
145 |
4905. Structural aspects of tunnel-junction coupled granular lead films
|
|
|
1982 |
32 |
4 |
p. 211- 1 p. |
artikel |
146 |
4949. Structure study of AuSi interface by MeV ion scattering
|
|
|
1982 |
32 |
4 |
p. 216- 1 p. |
artikel |
147 |
5006. Studies of surface, thin film and interface properties by automatic spectroscopic ellipsometry
|
|
|
1982 |
32 |
4 |
p. 221- 1 p. |
artikel |
148 |
4866. Study of the activation of nonevaporable getters
|
|
|
1982 |
32 |
4 |
p. 207- 1 p. |
artikel |
149 |
4958. Surface morphologies produced by ion milling on ion-implanted 18Cr8Ni steels
|
|
|
1982 |
32 |
4 |
p. 217- 1 p. |
artikel |
150 |
4998. Surface phases of GaAs(100) and AlAs(100)
|
|
|
1982 |
32 |
4 |
p. 221- 1 p. |
artikel |
151 |
5003. Surface rearrangement of adsorbate-covered Mo(001)
|
|
|
1982 |
32 |
4 |
p. 221- 1 p. |
artikel |
152 |
5027. Surface structure of the Ni{001}C(2 × 2) NO system
|
|
|
1982 |
32 |
4 |
p. 224- 1 p. |
artikel |
153 |
4960. Temperature measurements of glass substrates during plasma etching
|
|
|
1982 |
32 |
4 |
p. 217- 1 p. |
artikel |
154 |
The 11B(d,γ0)13C reaction in the region of the giant dipole resonance
|
|
|
1982 |
32 |
4 |
p. 216- 1 p. |
artikel |
155 |
4916. The effect of substrate temperature on the electrical resistivity of thin manganese films
|
|
|
1982 |
32 |
4 |
p. 212- 1 p. |
artikel |
156 |
4910. The interaction of tin oxide films with O2, H2, NO, and H2S
|
|
|
1982 |
32 |
4 |
p. 212- 1 p. |
artikel |
157 |
5031. Theoretical studies of Si(111) surface structures
|
|
|
1982 |
32 |
4 |
p. 224- 1 p. |
artikel |
158 |
4863. Theory of chemisorption on d-band metals
|
|
|
1982 |
32 |
4 |
p. 207- 1 p. |
artikel |
159 |
4932. The production of amorphous silicon without hydrogen
|
|
|
1982 |
32 |
4 |
p. 214- 1 p. |
artikel |
160 |
4865. Thermal decomposition of Ti getter films from the DITE tokamak
|
|
|
1982 |
32 |
4 |
p. 207- 1 p. |
artikel |
161 |
4864. Thermal desorption and UPS study of Co adsorbed on Cu-covered Ru (0001)
|
|
|
1982 |
32 |
4 |
p. 207- 1 p. |
artikel |
162 |
4901. Thermoelectric power measurements in thin tin films
|
|
|
1982 |
32 |
4 |
p. 211- 1 p. |
artikel |
163 |
5033. The Si(111) 7 × 7 to ‘1 × 1’ transition: A summary
|
|
|
1982 |
32 |
4 |
p. 224- 1 p. |
artikel |
164 |
5028. The structure of NH3 on Ni(111)
|
|
|
1982 |
32 |
4 |
p. 224- 1 p. |
artikel |
165 |
4919. Thickness periodicity in the Auger line shapes from epitaxial (111) Pd/(111) Cu films
|
|
|
1982 |
32 |
4 |
p. 213- 1 p. |
artikel |
166 |
4882. Ultimate pressure of mechanical pumps and the effectiveness of foreline traps
|
|
|
1982 |
32 |
4 |
p. 209- 1 p. |
artikel |
167 |
4874. “Vacuum” layer double-shell cryogenic inertial fusion targets
|
|
|
1982 |
32 |
4 |
p. 208- 1 p. |
artikel |
168 |
4885. Vacuum pumping of aggressive and dust laden vapours
|
|
|
1982 |
32 |
4 |
p. 209- 1 p. |
artikel |
169 |
4954. Vacuum UV and soft X-ray optical emissions from electron impact on metals
|
|
|
1982 |
32 |
4 |
p. 216- 1 p. |
artikel |
170 |
5026. Variations in the stoichiometry of thin oxides on silicon as seen in the Si LVV Auger spectrum
|
|
|
1982 |
32 |
4 |
p. 224- 1 p. |
artikel |
171 |
4869. Versatile high-power single-longitudinal-mode pulsed dye laser
|
|
|
1982 |
32 |
4 |
p. 208- 1 p. |
artikel |
172 |
4956. Vertical wind velocity measurements by a Doppler lidar and comparisons with a Doppler sodar
|
|
|
1982 |
32 |
4 |
p. 216- 1 p. |
artikel |
173 |
4893. Water vapour pressure gauge
|
|
|
1982 |
32 |
4 |
p. 210- 1 p. |
artikel |
174 |
5018. XPS investigation of the oxidation of Hg1-x Cd xTe surfaces
|
|
|
1982 |
32 |
4 |
p. 223- 1 p. |
artikel |
175 |
5005. X-ray photoelectron and Auger analysis of thin films
|
|
|
1982 |
32 |
4 |
p. 221- 1 p. |
artikel |