nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
A comparison of the construction of old and new turbomolecular pumps
|
Henning, J |
|
1980 |
30 |
4-5 |
p. 183-187 5 p. |
artikel |
2 |
A counterbalanced pushrod vacuum dilatometer for low-strength materials
|
|
|
1980 |
30 |
4-5 |
p. 202- 1 p. |
artikel |
3 |
AES studies of chemical shift and beam effect on molybdenum oxides
|
|
|
1980 |
30 |
4-5 |
p. 202- 1 p. |
artikel |
4 |
A low-energy electron spectrometer using concentric hemispheres and a grid retarding field
|
|
|
1980 |
30 |
4-5 |
p. 201- 1 p. |
artikel |
5 |
An uhv system for in siru preparation and analysis of thin films and surfaces
|
|
|
1980 |
30 |
4-5 |
p. 202- 1 p. |
artikel |
6 |
An XPS/AES study of films on electroplated Co-Sn alloy
|
|
|
1980 |
30 |
4-5 |
p. 203- 1 p. |
artikel |
7 |
An XPS study of the adherence of refractory carbide, silicide and boride rf sputtered wear-resistant coatings
|
|
|
1980 |
30 |
4-5 |
p. 200- 1 p. |
artikel |
8 |
Application of vacuum processes in engineering including electron beam welding, vacuum furnaces and metallizing
|
Saunders, Christopher |
|
1980 |
30 |
4-5 |
p. 167-173 7 p. |
artikel |
9 |
A specimen-exchange device for an ultra-high vacuum atom-probe field-ion microscope
|
|
|
1980 |
30 |
4-5 |
p. 198- 1 p. |
artikel |
10 |
Bakeable aluminium vacuum chamber and bellows with an aluminium flange and metal seal for ultra-high vacuum
|
|
|
1980 |
30 |
4-5 |
p. 198- 1 p. |
artikel |
11 |
Breakdown of nitrogen in long uniform field gaps stressed with high voltage
|
|
|
1980 |
30 |
4-5 |
p. 197- 1 p. |
artikel |
12 |
Cadmium selenide thin-film transistors
|
|
|
1980 |
30 |
4-5 |
p. 200- 1 p. |
artikel |
13 |
Conductivity effects in amorphous chalcogenide films
|
|
|
1980 |
30 |
4-5 |
p. 199- 1 p. |
artikel |
14 |
Controlled deposition of protective aluminium films on aircraft steels
|
|
|
1980 |
30 |
4-5 |
p. 199- 1 p. |
artikel |
15 |
Desorption spectrometric results of the adsorption of deuterium on pyrocarbon, silicon and boron carbide surfaces
|
|
|
1980 |
30 |
4-5 |
p. 197- 1 p. |
artikel |
16 |
Determination of the critical magnetic field of a superconducting A1-type As, Sb and Bi phase
|
|
|
1980 |
30 |
4-5 |
p. 199- 1 p. |
artikel |
17 |
Diffusion studies of Au through electroplated Pt films by Auger electron spectroscopy
|
|
|
1980 |
30 |
4-5 |
p. 202-203 2 p. |
artikel |
18 |
Effect of substrate temperature on the thickness of evaporated Se-36.7 at.% As alloy films
|
|
|
1980 |
30 |
4-5 |
p. 199-200 2 p. |
artikel |
19 |
Electron scattering by gas in the scanning electron microscope
|
|
|
1980 |
30 |
4-5 |
p. 201- 1 p. |
artikel |
20 |
End-effects in cylindrical magnetron sputtering sources
|
|
|
1980 |
30 |
4-5 |
p. 200- 1 p. |
artikel |
21 |
Further developments with single structure vapour pumping groups
|
|
|
1980 |
30 |
4-5 |
p. 198- 1 p. |
artikel |
22 |
Gas evolution and gettering in high pressure discharge lamps
|
|
|
1980 |
30 |
4-5 |
p. 200- 1 p. |
artikel |
23 |
Hall effect measurements on flash evaporated cadmium sulphide thin films
|
|
|
1980 |
30 |
4-5 |
p. 199- 1 p. |
artikel |
24 |
Heat exchanges and columnar growth in electron-beam evaporation of silicon films for solar cell applications
|
|
|
1980 |
30 |
4-5 |
p. 199- 1 p. |
artikel |
25 |
Improvement of electron gun brightness in conventional scanning electron microscope (SEM) by coating its tungsten filament with a zirconium carbide (ZrC) thin film
|
|
|
1980 |
30 |
4-5 |
p. 199- 1 p. |
artikel |
26 |
Influence of sample inclination and rotation during ion-beam etching on ion-etched structures
|
|
|
1980 |
30 |
4-5 |
p. 201- 1 p. |
artikel |
27 |
Ion-excited Auger electron emission from silicon
|
|
|
1980 |
30 |
4-5 |
p. 203- 1 p. |
artikel |
28 |
Kinetics data for diffusion of outgassing species from RTV 560 silicone rubber
|
|
|
1980 |
30 |
4-5 |
p. 201- 1 p. |
artikel |
29 |
Limits of composition achievable by ion implantation
|
|
|
1980 |
30 |
4-5 |
p. 197- 1 p. |
artikel |
30 |
Local regions of high-pressure plasma in a vacuum spark
|
|
|
1980 |
30 |
4-5 |
p. 197- 1 p. |
artikel |
31 |
Low work function electron emitter hexaborides
|
|
|
1980 |
30 |
4-5 |
p. 198- 1 p. |
artikel |
32 |
Magnetic multipole line-cusp plasma generator for neutral beam injectors
|
|
|
1980 |
30 |
4-5 |
p. 200- 1 p. |
artikel |
33 |
Magnetic sector atom-probe field ion microscopy with a retarding potential analyzer
|
|
|
1980 |
30 |
4-5 |
p. 201- 1 p. |
artikel |
34 |
Measurement of the lattice constant of Si-Ge heteroepitaxial layers grown on a silicon substrate
|
|
|
1980 |
30 |
4-5 |
p. 202- 1 p. |
artikel |
35 |
Mechanism of silicon etching by a CF4 plasma
|
|
|
1980 |
30 |
4-5 |
p. 201- 1 p. |
artikel |
36 |
Method of continuously measuring work function changes
|
|
|
1980 |
30 |
4-5 |
p. 198- 1 p. |
artikel |
37 |
Microprocessor control of a small vacuum system
|
Lucas, J |
|
1980 |
30 |
4-5 |
p. 160-166 7 p. |
artikel |
38 |
Modem diffusion pump vs turbomolecular pump systems
|
Harris, N.S. |
|
1980 |
30 |
4-5 |
p. 175-181 7 p. |
artikel |
39 |
Multilayer thermal desorption
|
Edwards Jr, D |
|
1980 |
30 |
4-5 |
p. 189-192 4 p. |
artikel |
40 |
[No title]
|
Colligon, J |
|
1980 |
30 |
4-5 |
p. 206- 1 p. |
artikel |
41 |
[No title]
|
Castle, J.E. |
|
1980 |
30 |
4-5 |
p. 205- 1 p. |
artikel |
42 |
On the difference between true and net outgassing rates
|
|
|
1980 |
30 |
4-5 |
p. 201- 1 p. |
artikel |
43 |
Optical spectroscopy for diagnostics and process control during glow discharge etching and sputter deposition
|
|
|
1980 |
30 |
4-5 |
p. 202- 1 p. |
artikel |
44 |
Oxygen adsorption on polycrystalline cu films studied by means of gravimetric uptake and work function change
|
|
|
1980 |
30 |
4-5 |
p. 197- 1 p. |
artikel |
45 |
Photoconduction in Si3N4 deposited on tungsten-coated silicon wafers
|
|
|
1980 |
30 |
4-5 |
p. 199- 1 p. |
artikel |
46 |
Plasma polymerization of ethylene by magnetron discharge. (USA)
|
|
|
1980 |
30 |
4-5 |
p. 198- 1 p. |
artikel |
47 |
Plasma stream transport method. (2) Use of charge exchange plasma source
|
|
|
1980 |
30 |
4-5 |
p. 198- 1 p. |
artikel |
48 |
Pressure-operated shutter for thin-film monitor
|
|
|
1980 |
30 |
4-5 |
p. 200- 1 p. |
artikel |
49 |
Quantitative AES analysis of coevaporated Cu/Ni films and the effects of ion sputtering on them: experiments at liquid nitrogen and room temperature
|
|
|
1980 |
30 |
4-5 |
p. 200- 1 p. |
artikel |
50 |
Resolution factors in the use of a double-pass CMA for ISS
|
|
|
1980 |
30 |
4-5 |
p. 202- 1 p. |
artikel |
51 |
Response of a quartz crystal microbalance to a liquid deposit. (USA)
|
|
|
1980 |
30 |
4-5 |
p. 201- 1 p. |
artikel |
52 |
Synchronous modulation in scanning Auger electron microscopy. (USA)
|
|
|
1980 |
30 |
4-5 |
p. 203- 1 p. |
artikel |
53 |
System for transferring samples between chambers in uhv
|
|
|
1980 |
30 |
4-5 |
p. 198- 1 p. |
artikel |
54 |
Temperature dependence of electron spin polarization in low-energy electron diffraction from W(001)
|
|
|
1980 |
30 |
4-5 |
p. 202- 1 p. |
artikel |
55 |
The afterglow at intermediate pressures. I. Helium
|
|
|
1980 |
30 |
4-5 |
p. 197- 1 p. |
artikel |
56 |
The application of ionization vacuum gauges to measurements in vacuum chambers provided with cryo-pumping surfaces
|
Haefer, R.A. |
|
1980 |
30 |
4-5 |
p. 193-195 3 p. |
artikel |
57 |
The effect of bakeout temperature on the electron and ion induced gas desorption coefficients of some technological materials
|
|
|
1980 |
30 |
4-5 |
p. 197- 1 p. |
artikel |
58 |
The lateral spread of short glow discharges
|
|
|
1980 |
30 |
4-5 |
p. 198- 1 p. |
artikel |
59 |
The modern cryopump
|
Bentley, P.D. |
|
1980 |
30 |
4-5 |
p. 145-158 14 p. |
artikel |
60 |
Thermal outgassing behaviour of Inconel 600 after different methods of surface preparation
|
|
|
1980 |
30 |
4-5 |
p. 201- 1 p. |
artikel |
61 |
Thermal transpiration: a comparison of experiment and theory
|
|
|
1980 |
30 |
4-5 |
p. 197- 1 p. |
artikel |
62 |
Ultra-high vacuum systems for surface research
|
|
|
1980 |
30 |
4-5 |
p. 202- 1 p. |
artikel |
63 |
Vacuum-sealed specimen stage for scanning microscopy of air-sensitive materials
|
|
|
1980 |
30 |
4-5 |
p. 198-199 2 p. |
artikel |
64 |
VCNR type characteristic in thin film amorphous Te-Ge-As-Si films
|
|
|
1980 |
30 |
4-5 |
p. 199- 1 p. |
artikel |
65 |
Vertical electrode configuration to avoid contaminating particles in sputtered ZnO thin films
|
|
|
1980 |
30 |
4-5 |
p. 200- 1 p. |
artikel |
66 |
Visual aids project
|
|
|
1980 |
30 |
4-5 |
p. 207- 1 p. |
artikel |