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                             93 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 4062. A cathode spot model and its energy balance for metal vapour arcs. (GB) 1979
 29 8-9 p. 323-324
2 p.
 artikel
2 Activities in vacuum science and technology in the USSR and in Eastern Europe Yarwood, J
 1979
 29 8-9 p. 319-322
4 p.
 artikel
3 4092. A gas-discharge atomic hydrogen source for electron-scattering experiments. (GB) 1979
 29 8-9 p. 327-
1 p.
 artikel
4 4108. Alignment of X-ray lithography masks using a new interferometric technique—experimental results. (USA) 1979
 29 8-9 p. 329-
1 p.
 artikel
5 4083. A neutral-particle analyser for plasma diagnostics. (GB) 1979
 29 8-9 p. 326-
1 p.
 artikel
6 4133. Annealing and rolling behaviours of concentration profiles of Cr and Cu implanted into mild steel. (USA) 1979
 29 8-9 p. 332-
1 p.
 artikel
7 4078. An X-ray diffraction study on the lattice imperfections in vapour-deposited fcc (Ag-4.5 at % Ge) alloy films. (GB) 1979
 29 8-9 p. 325-
1 p.
 artikel
8 4129. A refined ultra-high vacuum furnace for rare gas analysis. (GB) 1979
 29 8-9 p. 331-
1 p.
 artikel
9 4057. A rotating-electrode system for improved reproducibility in spark source mass spectrometry. (GB) 1979
 29 8-9 p. 323-
1 p.
 artikel
10 Atom and ion sources Steckelmacher, W
 1979
 29 8-9 p. 333-
1 p.
 artikel
11 4090. Averaging of electron-beam aberrations. (USA) 1979
 29 8-9 p. 326-
1 p.
 artikel
12 4079. Beryllium thin films as optical filters in helium discharge lamps. (GB) 1979
 29 8-9 p. 325-
1 p.
 artikel
13 4064. Boltzmann equation analysis of the electron swarm development in nitrogen. (GB) 1979
 29 8-9 p. 324-
1 p.
 artikel
14 4056. CAMAC-controlled system for the measurement of ion mobilities. (GB) 1979
 29 8-9 p. 323-
1 p.
 artikel
15 4071. Capabilities and limitations of pumps. Steam jet ejectors and liquid ring pumps. (GB) 1979
 29 8-9 p. 324-
1 p.
 artikel
16 4137. Charge neutralization of insulating surfaces in the SEM by gas ionization. (GB) 1979
 29 8-9 p. 332-
1 p.
 artikel
17 4131. Chemical characterization of WC-Co composite materials by AES and ISS. (1) Processing. (USA) 1979
 29 8-9 p. 331-332
2 p.
 artikel
18 4114. Chrome mask fabrication with electron-beam lithographic system. (USA) 1979
 29 8-9 p. 329-
1 p.
 artikel
19 4132. Comparison of Auger signals measured using differential and integral Auger spectra from C and O adsorbed on W. (USA) 1979
 29 8-9 p. 332-
1 p.
 artikel
20 4093. Comprehensive analysis of gratings for ultraviolet space instrumentation. (USA) 1979
 29 8-9 p. 327-
1 p.
 artikel
21 4073. Controlled vapour growth of small particles of Pd and Fe on thin Al2O3 substrates. (USA) 1979
 29 8-9 p. 324-325
2 p.
 artikel
22 4119. Control of pattern dimensions in electron lithography. (USA) 1979
 29 8-9 p. 330-
1 p.
 artikel
23 4085. Deflection distortion in scanning electron-beam systems. (USA) 1979
 29 8-9 p. 326-
1 p.
 artikel
24 4125. Design aspects of a scanning electron-beam-microfabrication instrument having 10 × 10 mm field coverage, normal substrate incidence and high throughput. (USA) 1979
 29 8-9 p. 331-
1 p.
 artikel
25 4110. Design of a medium-power X-ray lithography system. (USA) 1979
 29 8-9 p. 329-
1 p.
 artikel
26 4084. Design of a variable-aperture projection and scanning system for electron beam. (USA) 1979
 29 8-9 p. 326-
1 p.
 artikel
27 4091. Design of electron-beam scanning systems using the moving objective lens. (USA) 1979
 29 8-9 p. 327-
1 p.
 artikel
28 4122. Digitally positioned mechanical stage. (USA) 1979
 29 8-9 p. 330-
1 p.
 artikel
29 4112. Direct, electron lithographic fabrication of silicon devices and circuits. (USA) 1979
 29 8-9 p. 329-
1 p.
 artikel
30 4126. Double-aperture method of producing variably shaped writing spots for electron lithography. (USA) 1979
 29 8-9 p. 331-
1 p.
 artikel
31 4117. Electron-beam exposure profiles in polymer films for metallic film mask fabrication. (USA) 1979
 29 8-9 p. 330-
1 p.
 artikel
32 4111. Electron-beam fabrication of submicron gates for GaAs FET's (USA) 1979
 29 8-9 p. 329-
1 p.
 artikel
33 4128. Electron-beam lithographic pattern generation system. (USA) 1979
 29 8-9 p. 331-
1 p.
 artikel
34 4089. Electrostatic einzel lenses with reduced spherical aberration for use in field-emission guns. (USA) 1979
 29 8-9 p. 326-
1 p.
 artikel
35 4075. Evaporated films of arsenic trisulfide: physical model of effects of light exposure and heat cycling. (USA) 1979
 29 8-9 p. 325-
1 p.
 artikel
36 4109. Fabrication of integrated injection logic using e-beam lithography. (USA) 1979
 29 8-9 p. 329-
1 p.
 artikel
37 4104. Fabrication of micro- and submicron-bubble memory devices by a mask transfer technique with subsequent gatter-ion etching. (USA) 1979
 29 8-9 p. 328-
1 p.
 artikel
38 4087. Focusing and dispersing properties of a stigmatic crossed-field energy analyzer. (USA) 1979
 29 8-9 p. 326-
1 p.
 artikel
39 4086. Focusing of electron by laser-beam fields. (USA) 1979
 29 8-9 p. 326-
1 p.
 artikel
40 4120. High-contrast registration marks for electron-beam pattern exposure on (100) silicon. (USA) 1979
 29 8-9 p. 330-
1 p.
 artikel
41 4135. Highly stable single-crystal LaB6 cathode for conventional electron microprobe instruments. (USA) 1979
 29 8-9 p. 332-
1 p.
 artikel
42 4054. High-power discharge in Na-Xe vapor. (USA) 1979
 29 8-9 p. 323-
1 p.
 artikel
43 4123. High-precision automatic alignment procedure for vector scan e-beam lithography. (USA) 1979
 29 8-9 p. 330-331
2 p.
 artikel
44 4076. High-temperature substrate deposition of CdS thin films. (GB) 1979
 29 8-9 p. 325-
1 p.
 artikel
45 4099. Imaging and alignment tests on an electron projection system. (USA) 1979
 29 8-9 p. 328-
1 p.
 artikel
46 4097. Imaging conditions for electron-beam micromavhining. (USA) 1979
 29 8-9 p. 327-
1 p.
 artikel
47 4136. Improved integrated circuit failure analysis using SEM video processing. (USA) 1979
 29 8-9 p. 332-
1 p.
 artikel
48 Improvements in film quality through progress in vacuum generation and deposition technology Pulker, HK
 1979
 29 8-9 p. 309-312
4 p.
 artikel
49 4134. Inspection for defects of a mask containing one- to submicrometer patterns using a scanning electron microscope and feature extraction method. (USA) 1979
 29 8-9 p. 332-
1 p.
 artikel
50 4082. Ionic recombination of atomic and molecular ions in flowing afterglow plasmas. (GB) 1979
 29 8-9 p. 325-326
2 p.
 artikel
51 4067. Measurement of the traverse diffusion and Townsend's first ionisation coefficients from the observation of the photon flux produced in a Townsend discharge in molecular hydrogen. (GB) 1979
 29 8-9 p. 324-
1 p.
 artikel
52 Measurement of ultra high vacuum Part I. Total pressure measurements Weston, GF
 1979
 29 8-9 p. 277-291
15 p.
 artikel
53 4096. Mechanism of cavity formation in unfired ceramic by electron beam machining. (USA) 1979
 29 8-9 p. 327-
1 p.
 artikel
54 4124. Method of optimizing registration signals for electron-beam microfabrication. (USA) 1979
 29 8-9 p. 331-
1 p.
 artikel
55 4058. Multidipole plasma density. (USA) 1979
 29 8-9 p. 323-
1 p.
 artikel
56 4116. Negative electron resists for direct fabrication of devices. (USA) 1979
 29 8-9 p. 330-
1 p.
 artikel
57 4060. Negative work-function correction at a positively-charged surface. (GB) 1979
 29 8-9 p. 323-
1 p.
 artikel
58 4069. Observation of high-temperature electron injection in dense argon and mercury: application to cathode spots. (GB) 1979
 29 8-9 p. 324-
1 p.
 artikel
59 On the difficulties in interpreting thermal evolution spectra Donnelly, SE
 1979
 29 8-9 p. 303-307
5 p.
 artikel
60 4101. Optical manipulation of resist profile in conformable printing. (USA) 1979
 29 8-9 p. 328-
1 p.
 artikel
61 Physics of thin films Steckelmacher, W
 1979
 29 8-9 p. 334-
1 p.
 artikel
62 4094. Polarisation shift effect in high-density plasmas. (GB) 1979
 29 8-9 p. 327-
1 p.
 artikel
63 4105. Polyimide membrane X-ray lithography masks—fabrication and distortion measurements. (USA) 1979
 29 8-9 p. 328-
1 p.
 artikel
64 4098. Projection ion lithography with aperture lenses. (USA) 1979
 29 8-9 p. 327-
1 p.
 artikel
65 4121. Qualty assurance procedures for MEBES. (USA) 1979
 29 8-9 p. 330-
1 p.
 artikel
66 4074. Radiation effects of electron-beam metal depositions on IGFET's. (USA) 1979
 29 8-9 p. 325-
1 p.
 artikel
67 4100. Recent progress on the electron image projector. (USA) 1979
 29 8-9 p. 328-
1 p.
 artikel
68 4059. Recombination effects in an expanding laser-produced plasma. (USA) 1979
 29 8-9 p. 323-
1 p.
 artikel
69 4080. Resistive toroidal equilibria of Tokamak plasmas. (GB) 1979
 29 8-9 p. 325-
1 p.
 artikel
70 4072. Rotary pump back-migration. (GB) 1979
 29 8-9 p. 324-
1 p.
 artikel
71 4118. Self-consistent proximity effect correction technique for resist exposure (SPECTRE). (USA) 1979
 29 8-9 p. 330-
1 p.
 artikel
72 4102. Simulation of X-ray resist line edge profiles. (USA) 1979
 29 8-9 p. 328-
1 p.
 artikel
73 4115. Sol-gel behaviour and image formation in poly(glycidil methacrylate) and its copolymers with ethyl acrylate. (USA) 1979
 29 8-9 p. 330-
1 p.
 artikel
74 Some vacuum physics of steam condensers for turbines Bloomer, RN
 1979
 29 8-9 p. 293-301
9 p.
 artikel
75 4130. Surface analysis of WC-Co composite materials. (2) Quantitative Auger electron spectrometry. (USA) 1979
 29 8-9 p. 331-
1 p.
 artikel
76 4103. Surface relief gratings of 3200 Å period fabrication techniques and influence on thin-film growth. (USA) 1979
 29 8-9 p. 328-
1 p.
 artikel
77 4088. Systematic transformations of the asymptotic aberration coefficients of round electrostatic lenses (1). (USA) 1979
 29 8-9 p. 326-
1 p.
 artikel
78 4081. The anisotropic properties of rare-gas afterglow plasmas. (GB) 1979
 29 8-9 p. 325-
1 p.
 artikel
79 4061. The effect of non-uniformities on the measured transport parameters of electron swarms in hydrogen. (GB) 1979
 29 8-9 p. 323-
1 p.
 artikel
80 4066. The motion of a low-pressure arc in a strong magnetic field. (GB) 1979
 29 8-9 p. 324-
1 p.
 artikel
81 The producrion of vacuum: Past, present and future Yarwood, J
 1979
 29 8-9 p. 313-317
5 p.
 artikel
82 4070. The spatial and temporal development of the early phases of homogeneous discharges in N2. (GB) 1979
 29 8-9 p. 324-
1 p.
 artikel
83 4065. The transition from the first to the second stage of the ring discharge. (GB) 1979
 29 8-9 p. 324-
1 p.
 artikel
84 Thin film processing Steckelmacher, W
 1979
 29 8-9 p. 335-
1 p.
 artikel
85 4095. Three-body attachment in oxygen. (GB) 1979
 29 8-9 p. 327-
1 p.
 artikel
86 4063. Time-resolved studies of the electrical breakdown of a gas at radio frequencies. (GB) 1979
 29 8-9 p. 324-
1 p.
 artikel
87 4077. Tin-doping effects in GaAs films grown by molecular beam epitaxy. (USA) 1979
 29 8-9 p. 325-
1 p.
 artikel
88 4055. Transmittance of cultured crystalline quartz in the vacuum ultraviolet before and after electron irradiation. (USA) 1979
 29 8-9 p. 323-
1 p.
 artikel
89 4068. Two modes of moving striations in neon glow discharges. (GB) 1979
 29 8-9 p. 324-
1 p.
 artikel
90 4113. Two-phase high-density charge coupled devices fabricated by electron-beam lithography. (USA) 1979
 29 8-9 p. 329-
1 p.
 artikel
91 4127. Variable spot shaping for electron-beam lithography. (USA) 1979
 29 8-9 p. 331-
1 p.
 artikel
92 4107. X-ray exposure system using finely position adjusting apparatus. (USA) 1979
 29 8-9 p. 328-329
2 p.
 artikel
93 4106. X-ray lithography by synchrotron radiation of INS-ES. (USA) 1979
 29 8-9 p. 328-
1 p.
 artikel
                             93 gevonden resultaten
 
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