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                             142 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 3950. Absorption coefficient measurements for vacuum-deposited Cu-ternary thin films. (USA) 1979
 29 4-5 p. 196-
1 p.
 artikel
2 Activities in vacuum science and technology in the USSR and in Eastern Europe Yarwood, J
 1979
 29 4-5 p. 181-184
4 p.
 artikel
3 3975. Advances in cleaning metal and glass surfaces to micron-level cleanliness. (USA) 1979
 29 4-5 p. 199-
1 p.
 artikel
4 3919. AES and XPS of silicon nitride films of varying refractive indices. (USA) 1979
 29 4-5 p. 191-
1 p.
 artikel
5 3994. A multi-crystal u cleava cleavage device for crystal-surface studies in ultra-high vacuum. (Germany) 1979
 29 4-5 p. 201-
1 p.
 artikel
6 3905. Analysis of the imaging accuracy in reactive ion etching. (USA) 1979
 29 4-5 p. 189-
1 p.
 artikel
7 3980. Application of a double-pass CMA to ion scattering from some actinide materials. (USA) 1979
 29 4-5 p. 199-
1 p.
 artikel
8 3932. A study of the sorption of CO on W and Ni single-crystal surfaces by ion scattering. (USA) 1979
 29 4-5 p. 194-
1 p.
 artikel
9 3875. A theory for the cathode mechanism in low-current vacuum arcs, with application to the calculation of erosion rate. (USA) 1979
 29 4-5 p. 186-
1 p.
 artikel
10 3915. Atomic and electronic structure of semiconductor surfaces. (USA) 1979
 29 4-5 p. 190-191
2 p.
 artikel
11 3916. Auger and photoelectron study of codeposited sulphur and oxygen layers on silver (111). (USA) 1979
 29 4-5 p. 191-
1 p.
 artikel
12 3921. Auger electron spectroscopy studies of I-III-VI2 chalcopyrite compounds. (USA) 1979
 29 4-5 p. 191-
1 p.
 artikel
13 3978. Auger study of surface carbon and oxygen on thorium following ion bombardment. (USA) 1979
 29 4-5 p. 199-
1 p.
 artikel
14 3937. Back-diffusion of electrons in argon in the presence of an electric field. (GB) 1979
 29 4-5 p. 194-195
2 p.
 artikel
15 3902. Behaviour of sorb-ac wafer pumps in plasma machines. (USA) 1979
 29 4-5 p. 189-
1 p.
 artikel
16 3866. Chemisorbed phases of O2 on TiO2 and SrTiO3.. (USA) 1979
 29 4-5 p. 185-
1 p.
 artikel
17 3871. Chlorine adsorption on silver surfaces. (USA) 1979
 29 4-5 p. 185-
1 p.
 artikel
18 3918. Combination analysis of metal oxides using ESCA, AES and SIMS. (USA) 1979
 29 4-5 p. 191-
1 p.
 artikel
19 3982. Combined low-energy ion scattering and X-ray photoelectron spectroscopy study of Ta2OO5 bombarded by 500–3000 eV He ions. (USA) 1979
 29 4-5 p. 200-
1 p.
 artikel
20 3892. Compact electron-beam source for formation of neutral beams of very low vapour pressure materials. (USA) 1979
 29 4-5 p. 188-
1 p.
 artikel
21 3910. Computer controlled ESCA for nondestructive surface characterization utilizing a TV-type position sensitive detector. (USA) 1979
 29 4-5 p. 190-
1 p.
 artikel
22 3954. Correlation between the defect structure and electrical properties of deformed Si surfaces. (USA) 1979
 29 4-5 p. 196-197
2 p.
 artikel
23 3901. Cryosorption pumping of deuterium by MS-5A at temperatures above 4.2 K for fusion reactor applications. (USA) 1979
 29 4-5 p. 189-
1 p.
 artikel
24 3889. dc-bias-dependent dielectric dispersion properties of evaporated silicon oxide films. (GB) 1979
 29 4-5 p. 187-
1 p.
 artikel
25 3890. Debye-like dielectric dispersion properties of evaporated silicon oxide films at very low frequencies. (GB) 1979
 29 4-5 p. 187-
1 p.
 artikel
26 3908. Description of a polarized source of He radiation for surface studies. (USA) 1979
 29 4-5 p. 190-
1 p.
 artikel
27 3929. Determination of adsorbate bond geometry using photoemission. (USA) 1979
 29 4-5 p. 193-194
2 p.
 artikel
28 3983. Determination of quantitative sputter rates of iron oxide by Auger electron spectroscopy (AES) and ellipsometry. (USA) 1979
 29 4-5 p. 200-
1 p.
 artikel
29 3909. Determining the angles of incidence in a LEED experiment. (USA) 1979
 29 4-5 p. 190-
1 p.
 artikel
30 3896. Diagnostic methods for sputtering plasmas. (USA) 1979
 29 4-5 p. 188-
1 p.
 artikel
31 3891. Diatomic-complex donor and acceptor model for Ge-doped vapour-grown GaAs. (USA) 1979
 29 4-5 p. 188-
1 p.
 artikel
32 3882. Differentially pumped 6 in. metal sealed gate valve. (USA) 1979
 29 4-5 p. 187-
1 p.
 artikel
33 3968. Dual laser interferometer for plasma density measurements on large tokamaks. (USA) 1979
 29 4-5 p. 198-
1 p.
 artikel
34 3923. Effect of primary ion energy and surface chemistry on the secondary ion yields in low-energy SIMS experiments. (USA) 1979
 29 4-5 p. 193-
1 p.
 artikel
35 3941. Effects of accumulated film layers on the accuracy of quartz film thickness monitors. (USA) 1979
 29 4-5 p. 195-
1 p.
 artikel
36 3917. Elastic and inelastic contributions to secondary electron yield structure. (USA) 1979
 29 4-5 p. 191-
1 p.
 artikel
37 3911. Electrical properties of lead-zirconate-lead-titanate ferroelectric thin films and their composition analysis by Auger electron spectroscopy. (USA) 1979
 29 4-5 p. 190-
1 p.
 artikel
38 3949. Electrochromism in WO3 films with BaO additions. (USA) 1979
 29 4-5 p. 196-
1 p.
 artikel
39 3927. Electronic orbitals of Se bonded to Ni(100). (USA) 1979
 29 4-5 p. 193-
1 p.
 artikel
40 3913. Electron-solid interactions: their nature and consequences. (USA) 1979
 29 4-5 p. 190-
1 p.
 artikel
41 3942. Electron spectroscopic study of oxygen-plasma-treated polymer surfaces. (USA) 1979
 29 4-5 p. 195-
1 p.
 artikel
42 3939. Electron trapping in SiO2 due to electron-beam deposition of aluminum. (USA) 1979
 29 4-5 p. 195-
1 p.
 artikel
43 3981. Energy distributions of sputtered copper neutrals and ions. (USA) 1979
 29 4-5 p. 199-200
2 p.
 artikel
44 Energy spectra of secondary ions and secondary ion emission (SIE) mechanisms Tsipinyuk, BA
 1979
 29 4-5 p. 155-167
13 p.
 artikel
45 3977. Enhanced etching of ion-implanted silicon nitride in buffered hydrofluoric acid. (USA) 1979
 29 4-5 p. 199-
1 p.
 artikel
46 3876. Erosion products from the cathode spot region of a copper vacuum arc. (USA) 1979
 29 4-5 p. 186-
1 p.
 artikel
47 3885. Fast hydrogen gas injection system for plasma physics experiments. (USA) 1979
 29 4-5 p. 187-
1 p.
 artikel
48 3886. Fast valve for gas injection into vacuum. (USA) 1979
 29 4-5 p. 187-
1 p.
 artikel
49 3971. Flow rate effects in plasma etching. (USA) 1979
 29 4-5 p. 198-
1 p.
 artikel
50 3934. Flux and fluence dependence of implantation disorder in GaAs substrates. (USA) 1979
 29 4-5 p. 194-
1 p.
 artikel
51 3959. Friction and wear results from WC + Co coatings by — dc biased rf sputtering in a helium atmosphere. (USA) 1979
 29 4-5 p. 197-
1 p.
 artikel
52 3887. Glow discharge processing vs bakeout for aluminum storage ring vacuum chambers. (USA) 1979
 29 4-5 p. 187-
1 p.
 artikel
53 3967. High-frequency Stark effect on optically excited atoms of a plasma in the static magnetic field. (USA) 1979
 29 4-5 p. 198-
1 p.
 artikel
54 3914. High resolution Auger sputter profiling study of the effect of phosphorus pileup on the SiSiO2 interface morphology. (USA) 1979
 29 4-5 p. 190-
1 p.
 artikel
55 3960. Hydrogen evolution from plasma-deposited amorphous silicon films. (USA) 1979
 29 4-5 p. 197-
1 p.
 artikel
56 3933. Identification of surface radicals by vibration spectroscopy. Reactions of C2HH2,, C2HH4 and H2 on Pt (111). (USA) 1979
 29 4-5 p. 194-
1 p.
 artikel
57 3955. Improvement of the diffusion barrier properties of rf-sputtered molybdenum. (USA) 1979
 29 4-5 p. 197-
1 p.
 artikel
58 3936. Influence of environment on oxide-cathode emission. (Germany) 1979
 29 4-5 p. 194-
1 p.
 artikel
59 3888. Interface states at the GaGaAs interface. (USA) 1979
 29 4-5 p. 187-
1 p.
 artikel
60 3907. Investigation of oxide growth in nickel thin films. (Germany) 1979
 29 4-5 p. 189-190
2 p.
 artikel
61 3970. Ion exchange currents in vacuum accelerator tubes. (GB) 1979
 29 4-5 p. 198-
1 p.
 artikel
62 3874. Ionization processes in the positive column of the low-pressure HgAr discharge. (USA) 1979
 29 4-5 p. 186-
1 p.
 artikel
63 3924. Ion nitriding of steels. (USA) 1979
 29 4-5 p. 193-
1 p.
 artikel
64 3867. ir study of molecules adsorbed on metal surfaces by surface electromagnetic wave spectroscopy. (USA) 1979
 29 4-5 p. 185-
1 p.
 artikel
65 3872. Kinetics of thermal desorption and thermal conversion of adsorbates: AES studies. (USA) 1979
 29 4-5 p. 185-186
2 p.
 artikel
66 3961. Large-scale sputtering of indium-tin oxide. (USA) 1979
 29 4-5 p. 197-
1 p.
 artikel
67 3986. LEED analysis of a Cu(110) surface. (USA) 1979
 29 4-5 p. 200-
1 p.
 artikel
68 3987. LEED—Auger study of the (110) surface of a 1% SiFe single crystal. (USA) 1979
 29 4-5 p. 200-
1 p.
 artikel
69 3869. LEED structure analysis of a p((2 × 2) chemisorbed layer of CO on Ti(0001). (USA) 1979
 29 4-5 p. 185-
1 p.
 artikel
70 3973. Low-temperature interdiffusion in titanium-permalloy thin-film diffusion couples. (USA) 1979
 29 4-5 p. 199-
1 p.
 artikel
71 3895. Magnetron sputtering: basic physics and application to cylindrical magnetrons. (USA) 1979
 29 4-5 p. 188-
1 p.
 artikel
72 3898. Mass spectrometric solutions to manufacturing problems in the semiconductor industry. (USA) 1979
 29 4-5 p. 188-
1 p.
 artikel
73 3904. Mass spectrometric study of plasma etching. (USA) 1979
 29 4-5 p. 189-
1 p.
 artikel
74 3952. Measurement of plasma discharge characteristics for sputtering applications. (USA) 1979
 29 4-5 p. 196-
1 p.
 artikel
75 3903. Mechanical properties on ion-beam-textured surgical implant alloys. (USA) 1979
 29 4-5 p. 189-
1 p.
 artikel
76 3931. Molecular-beam apparatus for the study of gas—surface interactions. (USA) 1979
 29 4-5 p. 194-
1 p.
 artikel
77 3993. Molecular beam epitaxy of GaAs and simultaneous characterization by RHEED, SIMS and AES techniques. (Germany) 1979
 29 4-5 p. 201-
1 p.
 artikel
78 3947. Multisource deposition rate control using a mass spectrometer as a sensing element. (USA) 1979
 29 4-5 p. 196-
1 p.
 artikel
79 3935. Multistep ionization in the positive column of low-pressure NaNe and Ne discharges. (USA) 1979
 29 4-5 p. 194-
1 p.
 artikel
80 3957. Niobium nitride thin film SQUID's biased at 20 MHz and 9.2 GHz. (USA) 1979
 29 4-5 p. 197-
1 p.
 artikel
81 [No title] Greaves, RIN
 1979
 29 4-5 p. 203-
1 p.
 artikel
82 [No title] Yarwood, J
 1979
 29 4-5 p. 205-
1 p.
 artikel
83 3912. Observation of phosphorus pile-up at the SiO2 Si interface. (USA) 1979
 29 4-5 p. 190-
1 p.
 artikel
84 3951. Optical properties of selectively absorbing metal/insulator composite films. (USA) 1979
 29 4-5 p. 196-
1 p.
 artikel
85 3868. Oxidation of tin: an ESCA study.(USA) 1979
 29 4-5 p. 185-
1 p.
 artikel
86 3870. Oxygen uptake on epitaxial PbTe(111) surfaces. (USA) 1979
 29 4-5 p. 185-
1 p.
 artikel
87 3880. Performance of a cryopump—ion pump system. (USA) 1979
 29 4-5 p. 186-
1 p.
 artikel
88 3894. Planar magnetron sputtering. (USA) 1979
 29 4-5 p. 188-
1 p.
 artikel
89 3897. Plasma diagnostics with electric probes. (USA) 1979
 29 4-5 p. 188-
1 p.
 artikel
90 3883. Precision molecular flow measurement and control for single and multigas systems. (USA) 1979
 29 4-5 p. 187-
1 p.
 artikel
91 3930. Precursor adsorption of O2 on tin and the activation energy for chemisorption. (USA) 1979
 29 4-5 p. 194-
1 p.
 artikel
92 3879. Problems with turbomolecular pumps in magnetic fields. (USA) 1979
 29 4-5 p. 186-
1 p.
 artikel
93 3906. Profile control by reactive sputter etching. (USA) 1979
 29 4-5 p. 189-
1 p.
 artikel
94 3878. Properties and use of perfluoro polyethers for vacuum applications. (USA) 1979
 29 4-5 p. 186-
1 p.
 artikel
95 3928. Purposeful modification by gas adsorption of atomically clean iron surfaces at room temperature and characterization by 21.2 eV photoemission. (USA) 1979
 29 4-5 p. 193-
1 p.
 artikel
96 3925. Quasisimultaneous SIMS, AES and XPS investigations of the oxidation of Mo, Ti and Co in the monolayer range. (USA) 1979
 29 4-5 p. 193-
1 p.
 artikel
97 3. Radiant heating using paraboloidal reflectors Thutupalli, GKM
 1979
 29 4-5 p. 179-180
2 p.
 artikel
98 3953. Rate and pressure dependence of contaminants in vacuum-deposited aluminum films. (USA) 1979
 29 4-5 p. 196-
1 p.
 artikel
99 3972. Reactive ion etching of aluminum and aluminum alloys in an rf plasma containing halogen species. (USA) 1979
 29 4-5 p. 198-199
2 p.
 artikel
100 3963. Reduction of contamination in triode sputtering systems. (USA) 1979
 29 4-5 p. 197-198
2 p.
 artikel
101 3944. Reflectance and structure of evaporated chromium and molybdenum films. (USA) 1979
 29 4-5 p. 195-
1 p.
 artikel
102 Report Yarwood, J
 1979
 29 4-5 p. 207-
1 p.
 artikel
103 3893. Resistivity and microstructure of polycrystalline Au films deposited by rf bias-diode and triode sputtering. (USA) 1979
 29 4-5 p. 188-
1 p.
 artikel
104 3873. Secondary emission from multialkali photocathodes. (USA) 1979
 29 4-5 p. 186-
1 p.
 artikel
105 3964. Selective resputtering-induced anisotropy in amorphous films. (USA) 1979
 29 4-5 p. 198-
1 p.
 artikel
106 3969. Self-magnetic insulation in vacuum for coaxial geometry. (USA) 1979
 29 4-5 p. 198-
1 p.
 artikel
107 3881. Simple vacuum gauge using TaN thin films in the pressure range of 105 to 103 Pa. (USA) Pa. (USA) 1979
 29 4-5 p. 187-
1 p.
 artikel
108 3920. Solid-state reaction of Ti and sapphire. (USA) 1979
 29 4-5 p. 191-
1 p.
 artikel
109 3989. Some effects of anisotropic vibrations in LEED. (USA) 1979
 29 4-5 p. 200-
1 p.
 artikel
110 3979. Some performance tests of a micro-area AES. (USA) 1979
 29 4-5 p. 199-
1 p.
 artikel
111 3995. Spreading of Pd layers on W(110) and vicinal planes by surface diffusion. (Germany) 1979
 29 4-5 p. 201-
1 p.
 artikel
112 3956. Structural analysis of rf and dc sputtered Nb3GGe thin films containing oxygen. (USA) 1979
 29 4-5 p. 197-
1 p.
 artikel
113 3958. Structural and compositional characterization of sputter deposited WC + Co films. (USA) 1979
 29 4-5 p. 197-
1 p.
 artikel
114 3877. Suction of solvent vapours with oil-immersed positive displacement pumps operating at an elevated working temperature. (Germany) 1979
 29 4-5 p. 186-
1 p.
 artikel
115 3984. Surface photovoltage experiments on SrTiO3 electrodes. (USA) 1979
 29 4-5 p. 200-
1 p.
 artikel
116 3992. Surface photovoltage spectroscopy of defects and impurities in trigonal selenium. (USA) 1979
 29 4-5 p. 201-
1 p.
 artikel
117 3926. Surface resonances and the oxidation of single-crystal aluminum (USA) 1979
 29 4-5 p. 193-
1 p.
 artikel
118 3996. Surface segregation of Sn during MBE of n--type GaAs established by SIMS and AES. (USA) 1979
 29 4-5 p. 201-
1 p.
 artikel
119 3988. Surface structure and orbital symmetries of (110) surface states of GaAs. (USA) 1979
 29 4-5 p. 200-
1 p.
 artikel
120 1. Surface temperature of glass substrate heated through Ga Shigeta, J
 1979
 29 4-5 p. 175-
1 p.
 artikel
121 3946. Synthesis and physical properties of superconducting compound films formed by the electron-beam codeposition of the elements. (USA) 1979
 29 4-5 p. 195-196
2 p.
 artikel
122 3962. Technology of ion beam sources used in sputtering. (USA) 1979
 29 4-5 p. 197-
1 p.
 artikel
123 3985. Temperature effects in polarized low-energy electron scattering from solids and liquids. (USA) 1979
 29 4-5 p. 200-
1 p.
 artikel
124 3899. TFTR vacuum system. (USA) 1979
 29 4-5 p. 188-189
2 p.
 artikel
125 3965. The characterization of a laser-produced negative hydrogen ion plasma. (USA) 1979
 29 4-5 p. 198-
1 p.
 artikel
126 The influence of virtual leaks on the pressure in high and ultra-high vacuum systems Edwards Jr, D
 1979
 29 4-5 p. 169-172
4 p.
 artikel
127 3976. The nitrogen pressure in a vacuum system. (USA) 1979
 29 4-5 p. 199-
1 p.
 artikel
128 The use of an oscillating vane gauge to determine gas composition of binary gas mixtures Dyksterhuis, FH
 1979
 29 4-5 p. 149-154
6 p.
 artikel
129 3943. Thickness dependence of an amorphous overlayer Ge film on the electrical conductivity of ultra-thin Pt films. (USA) 1979
 29 4-5 p. 195-
1 p.
 artikel
130 3948. Thickness dependence of structural and electrical properties of Cds films for solar cells. (USA) 1979
 29 4-5 p. 196-
1 p.
 artikel
131 Thickness monitoring of optical thin films Thutupalli, GKM
 1979
 29 4-5 p. 173-174
2 p.
 artikel
132 3945. Thin-film NiCr resistor. (USA) 1979
 29 4-5 p. 195-
1 p.
 artikel
133 3974. Thirty cm ion milling source. (USA) 1979
 29 4-5 p. 199-
1 p.
 artikel
134 3922. Trapping of deuterium implanted into stainless steel at low temperature. (USA) 1979
 29 4-5 p. 193-
1 p.
 artikel
135 3900. Turbomolecular pump vacuum system for the Princeton Large Torus. (USA) 1979
 29 4-5 p. 189-
1 p.
 artikel
136 3940. Uhv facility for metal—semiconductor thin-film studies. (USA) 1979
 29 4-5 p. 195-
1 p.
 artikel
137 2. Ultra-high vacuum and cryogenic feedthrough with 48 pins Ishimaru, H
 1979
 29 4-5 p. 177-178
2 p.
 artikel
138 3966. Use of a Hall accelerator in the production of negative hydrogen ions in cesium vapour. (USA) 1979
 29 4-5 p. 198-
1 p.
 artikel
139 3990. V Au Auger spectra from W(100). (USA) 1979
 29 4-5 p. 200-
1 p.
 artikel
140 3884. Versatile electrical feedthrough for probe measurements o. (USA). (USA) 1979
 29 4-5 p. 187-
1 p.
 artikel
141 3938. Work functions and structures of alkaline-earth thin films. (USA) 1979
 29 4-5 p. 195-
1 p.
 artikel
142 3991. X-ray photoelectron spectroscopy with X-ray photons of higher energy. (USA) 1979
 29 4-5 p. 200-201
2 p.
 artikel
                             142 gevonden resultaten
 
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