| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Activities in vacuum science and technology in the USSR and in eastern europe
|
Yarwood, J
|
|
1979
|
29 |
11-12 |
p. 453-454
2 p.
|
artikel
|
| 2 |
4158. Adhesion and hydrophilicity of glow-discharge polymerized propylene coatings. (USA)
|
|
|
1979
|
29 |
11-12 |
p. 457-
1 p.
|
artikel
|
| 3 |
4211. Alloy compositional profiles by AES, ESCA and ion sputtering: air-exposed Fe1−xPdx films. (USA)
|
|
|
1979
|
29 |
11-12 |
p. 464-
1 p.
|
artikel
|
| 4 |
A miniaturized 16 I s−1 turbomolecular pump for space application
|
Henning, J
|
|
1979
|
29 |
11-12 |
p. 447-448
2 p.
|
artikel
|
| 5 |
4213. Analysis of the oxide/semiconductor interface using Auger and ESCA as applied to InP and GaAs. (USA)
|
|
|
1979
|
29 |
11-12 |
p. 464-
1 p.
|
artikel
|
| 6 |
4155. An appraisal of glow discharge treatment of copper surfaces by the techniques of electron stimulated desorption. (GB)
|
|
|
1979
|
29 |
11-12 |
p. 457-
1 p.
|
artikel
|
| 7 |
An efficient alternative method of LEED analysis for structural determinations of surfaces
|
Clarke, LJ
|
|
1979
|
29 |
11-12 |
p. 405-416
12 p.
|
artikel
|
| 8 |
4196. Application of Auger electron spectroscopy to studies of the silicon/silicide interface. (USA)
|
|
|
1979
|
29 |
11-12 |
p. 462-
1 p.
|
artikel
|
| 9 |
4163. A specimen manipulator for analytical vacuum instrumentation
|
|
|
1979
|
29 |
11-12 |
p. 458-
1 p.
|
artikel
|
| 10 |
4153. A theoretical study of Al overlayers on Si (111). (USA)
|
|
|
1979
|
29 |
11-12 |
p. 457-
1 p.
|
artikel
|
| 11 |
4214. Auger profiling studies of LPE n-Al xGa1−xAs-n-GaAs heterojunctions and the absence of rectification. (USA)
|
|
|
1979
|
29 |
11-12 |
p. 464-
1 p.
|
artikel
|
| 12 |
Behaviour of AlAl2O3-metal capacitors when subjected to voltage and temperature changes
|
Berlicki, T
|
|
1979
|
29 |
11-12 |
p. 449-450
2 p.
|
artikel
|
| 13 |
Committee report 1978/79
|
Weston, GF
|
|
1979
|
29 |
11-12 |
p. 467-
1 p.
|
artikel
|
| 14 |
4146. Comparative study of annealed neon-, argon- and krypton-ion implantation damage in silicon. (USA)
|
|
|
1979
|
29 |
11-12 |
p. 456-
1 p.
|
artikel
|
| 15 |
4189. Comparison of the performances of some surface treatments. (France)
|
|
|
1979
|
29 |
11-12 |
p. 461-
1 p.
|
artikel
|
| 16 |
4154. Covalent-ionic trend at Schottky barrier interfaces in a pairing model. (USA)
|
|
|
1979
|
29 |
11-12 |
p. 457-
1 p.
|
artikel
|
| 17 |
4157. Design and operating characteristics of low pressure plasma systems. (GB)
|
|
|
1979
|
29 |
11-12 |
p. 457-
1 p.
|
artikel
|
| 18 |
4184. Design and optimization of directly heated LaB6 cathode assemblies for electron-beam instruments. (USA)
|
|
|
1979
|
29 |
11-12 |
p. 460-
1 p.
|
artikel
|
| 19 |
4147. Desorption of neutral molecules from Al (6061) by electron and ion bombardment. (USA)
|
|
|
1979
|
29 |
11-12 |
p. 456-
1 p.
|
artikel
|
| 20 |
4166. Dissolution of amorphous silicon into solid aluminium. (USA)
|
|
|
1979
|
29 |
11-12 |
p. 458-
1 p.
|
artikel
|
| 21 |
4138. Education in vacuum science and technology in undergraduate and post-experience courses. (GB)
|
|
|
1979
|
29 |
11-12 |
p. 455-
1 p.
|
artikel
|
| 22 |
4152. Effects of ultrathin oxides in conducting MIS structures on GaAs. (USA)
|
|
|
1979
|
29 |
11-12 |
p. 456-
1 p.
|
artikel
|
| 23 |
4156. Electrode surface effects in the high voltage glow discharge. (GB)
|
|
|
1979
|
29 |
11-12 |
p. 457-
1 p.
|
artikel
|
| 24 |
4150. Electronic states of impurities located at or near semiconductor-insulator interfaces. (USA)
|
|
|
1979
|
29 |
11-12 |
p. 456-
1 p.
|
artikel
|
| 25 |
4190. Electron microprobe, principles and application to spectrochemical analyses of surfaces. (France)
|
|
|
1979
|
29 |
11-12 |
p. 461-
1 p.
|
artikel
|
| 26 |
4145. Epitaxial regrowth of Ar-implanted amorphous silicon. (USA)
|
|
|
1979
|
29 |
11-12 |
p. 455-456
2 p.
|
artikel
|
| 27 |
4144. Epitaxial regrowth of Ne- and Kr-implanted amorphous silicon. (USA)
|
|
|
1979
|
29 |
11-12 |
p. 455-
1 p.
|
artikel
|
| 28 |
4142. Extrinsic surface states for oxygen chemisorbed on the GaAs (110) surface. (USA)
|
|
|
1979
|
29 |
11-12 |
p. 455-
1 p.
|
artikel
|
| 29 |
4168. Field-assisted minority carrier electron transport across a p-InGaAa/p-InP heterojunction. (USA)
|
|
|
1979
|
29 |
11-12 |
p. 458-
1 p.
|
artikel
|
| 30 |
4160. First intercontinental test of uhv transfer device. (USA)
|
|
|
1979
|
29 |
11-12 |
p. 457-
1 p.
|
artikel
|
| 31 |
4164. Four fast working locks, functioning to 10−8 torr. (France)
|
|
|
1979
|
29 |
11-12 |
p. 458-
1 p.
|
artikel
|
| 32 |
4170. GeGaAs (110) interface formation. (USA)
|
|
|
1979
|
29 |
11-12 |
p. 459-
1 p.
|
artikel
|
| 33 |
4183. Hydrocarbon contamination in vacuum dependent scientific instruments. (GB)
|
|
|
1979
|
29 |
11-12 |
p. 460-
1 p.
|
artikel
|
| 34 |
Improved version of the CERN condensation cryopump
|
Benvenuti, C
|
|
1979
|
29 |
11-12 |
p. 427-432
6 p.
|
artikel
|
| 35 |
4165. Influence of the free surface on the electrical behaviour of metal contacts to p-InAs. (USA)
|
|
|
1979
|
29 |
11-12 |
p. 458-
1 p.
|
artikel
|
| 36 |
4186. Initial etching in an rf butane plasma. (GB)
|
|
|
1979
|
29 |
11-12 |
p. 461-
1 p.
|
artikel
|
| 37 |
4171. Ion plating. (France)
|
|
|
1979
|
29 |
11-12 |
p. 459-
1 p.
|
artikel
|
| 38 |
IPAT 1979. International conference on ion plating and allied techniques
|
Yarwood, J
|
|
1979
|
29 |
11-12 |
p. 468-
1 p.
|
artikel
|
| 39 |
Langmuir probe studies of the glow discharge in an rf sputtering system at various frequencies
|
Norström, H
|
|
1979
|
29 |
11-12 |
p. 443-445
3 p.
|
artikel
|
| 40 |
4188. Lowering of the degassing rate of stainless steels of the AISI 304 and 316 series. (France)
|
|
|
1979
|
29 |
11-12 |
p. 461-
1 p.
|
artikel
|
| 41 |
4175. Mean free path of negative ions in diode sputtering. (USA)
|
|
|
1979
|
29 |
11-12 |
p. 459-
1 p.
|
artikel
|
| 42 |
4151. Measurement of MIS capacitors with oxygen-doped Al x Ga1 − xAs insulating layers on GaAs. (USA)
|
|
|
1979
|
29 |
11-12 |
p. 456-
1 p.
|
artikel
|
| 43 |
4197. Measurement of valence band Auger spectra for GaAs (110) from Ga and As CCV transitions. (USA)
|
|
|
1979
|
29 |
11-12 |
p. 462-
1 p.
|
artikel
|
| 44 |
4193. Metal-semiconductor surface and interface states on (110) GaAs. (USA)
|
|
|
1979
|
29 |
11-12 |
p. 461-
1 p.
|
artikel
|
| 45 |
4210. Method for the cross-sectional examination of molecular semi-conductor/metal film junctions using transition electron microscopy. (USA)
|
|
|
1979
|
29 |
11-12 |
p. 463-464
2 p.
|
artikel
|
| 46 |
4181. Multiple molecular beam interferometric maser: construction and main characteristics of the experimental results. (France)
|
|
|
1979
|
29 |
11-12 |
p. 460-
1 p.
|
artikel
|
| 47 |
4194. New phenomena in Schottky barrier formation on III–V compounds. (USA)
|
|
|
1979
|
29 |
11-12 |
p. 462-
1 p.
|
artikel
|
| 48 |
4174. New sputtering system for manufacturing ZnO thin-film SAW devices. (USA)
|
|
|
1979
|
29 |
11-12 |
p. 459-
1 p.
|
artikel
|
| 49 |
[No title]
|
Palmer, DW
|
|
1979
|
29 |
11-12 |
p. 466-
1 p.
|
artikel
|
| 50 |
[No title]
|
Yarwood, J
|
|
1979
|
29 |
11-12 |
p. 465-
1 p.
|
artikel
|
| 51 |
4187. On the deconversion of semiconducting CdF2 crystals due to vacuum heat treatment. (GB)
|
|
|
1979
|
29 |
11-12 |
p. 461-
1 p.
|
artikel
|
| 52 |
4204. On the geometrical structure of cleaved Si (111) surfaces. (USA)
|
|
|
1979
|
29 |
11-12 |
p. 463-
1 p.
|
artikel
|
| 53 |
4149. Optical studies of the anodic oxide on GaAs. (USA)
|
|
|
1979
|
29 |
11-12 |
p. 456-
1 p.
|
artikel
|
| 54 |
4140. Oxygen uptake on an epitaxial PbSnTe (111) surface. (USA)
|
|
|
1979
|
29 |
11-12 |
p. 455-
1 p.
|
artikel
|
| 55 |
4182. Physico-chemical methods of analysis, their characteristics and comparison. (France)
|
|
|
1979
|
29 |
11-12 |
p. 460-
1 p.
|
artikel
|
| 56 |
4212. Plasma anodization of GaAs in a dc discharge. (USA)
|
|
|
1979
|
29 |
11-12 |
p. 464-
1 p.
|
artikel
|
| 57 |
4173. Preparation and compositional analysis of sputtered TaN films. (USA)
|
|
|
1979
|
29 |
11-12 |
p. 459-
1 p.
|
artikel
|
| 58 |
4179. Pressure measurements in the SRS. (GB)
|
|
|
1979
|
29 |
11-12 |
p. 460-
1 p.
|
artikel
|
| 59 |
Problems in the production and measurement of atomically clean surface environments and their confirmation based on the use of field emission
|
de Chernatony, L
|
|
1979
|
29 |
11-12 |
p. 389-403
15 p.
|
artikel
|
| 60 |
4169. Pseudopotential calculations for ultrathin layer heterostructures. (USA)
|
|
|
1979
|
29 |
11-12 |
p. 458-
1 p.
|
artikel
|
| 61 |
4139. Reactions of oxygen with ZnO 1010 surfaces. (USA)
|
|
|
1979
|
29 |
11-12 |
p. 455-
1 p.
|
artikel
|
| 62 |
4209. Rf induction technique for sample heating in surface science experiments. (USA)
|
|
|
1979
|
29 |
11-12 |
p. 463-
1 p.
|
artikel
|
| 63 |
Sample contamination caused by sputtering during ion implantation
|
Hemment, PLF
|
|
1979
|
29 |
11-12 |
p. 439-442
4 p.
|
artikel
|
| 64 |
4176. Scale-up problems in electron-beam evaporation and sputtering. (USA)
|
|
|
1979
|
29 |
11-12 |
p. 459-
1 p.
|
artikel
|
| 65 |
4192. Schottky barriers on ordered and disordered surfaces of GaAs (110). (USA)
|
|
|
1979
|
29 |
11-12 |
p. 461-
1 p.
|
artikel
|
| 66 |
4203. Self-consistent study of the (2 × 1) reconstructed Si (111) surface. (USA)
|
|
|
1979
|
29 |
11-12 |
p. 463-
1 p.
|
artikel
|
| 67 |
4159. Self-maintaining high-voltage ac vacuum system. (USA)
|
|
|
1979
|
29 |
11-12 |
p. 457-
1 p.
|
artikel
|
| 68 |
4143. Sheet resistance variation on colour-banded silicon following high dose implantations at high dose rates. (USA)
|
|
|
1979
|
29 |
11-12 |
p. 455-
1 p.
|
artikel
|
| 69 |
4191. Silver contact on GaAs (001) and InP (001)
|
|
|
1979
|
29 |
11-12 |
p. 461-
1 p.
|
artikel
|
| 70 |
4172. Sputtering of PtSi. (USA)
|
|
|
1979
|
29 |
11-12 |
p. 459-
1 p.
|
artikel
|
| 71 |
4195. Structural studies of thin nickel films on silicon surfaces. (USA)
|
|
|
1979
|
29 |
11-12 |
p. 462-
1 p.
|
artikel
|
| 72 |
4205. Surface and near-surface atomic structure of GaAs (110)
|
|
|
1979
|
29 |
11-12 |
p. 463-
1 p.
|
artikel
|
| 73 |
4208. Surface bands in relaxed cleavage surface of GaP. (USA)
|
|
|
1979
|
29 |
11-12 |
p. 463-
1 p.
|
artikel
|
| 74 |
4207. Surface composition of polycrystalline AuCu alloys as a function of temperature. (USA)
|
|
|
1979
|
29 |
11-12 |
p. 463-
1 p.
|
artikel
|
| 75 |
4200. Surface electronic structure studies of GaAs (110). (USA)
|
|
|
1979
|
29 |
11-12 |
p. 462-
1 p.
|
artikel
|
| 76 |
4199. Surface final-state effects on core electron transition energies. (USA)
|
|
|
1979
|
29 |
11-12 |
p. 462-
1 p.
|
artikel
|
| 77 |
4202. (110) surface states of GaAs and matrix element effects in angle-resolved photoemission. (USA)
|
|
|
1979
|
29 |
11-12 |
p. 462-463
2 p.
|
artikel
|
| 78 |
4201. Symmetry determination of surface states on GaAs (110) using polarization-dependent, angle-resolved photoemission. (USA)
|
|
|
1979
|
29 |
11-12 |
p. 462-
1 p.
|
artikel
|
| 79 |
4148. Synchroton radiation photoemission studies of the adsorption of oxygen on magnesium and aluminium. (USA)
|
|
|
1979
|
29 |
11-12 |
p. 456-
1 p.
|
artikel
|
| 80 |
4162. The design of very cheap sorption pumps. (GB)
|
|
|
1979
|
29 |
11-12 |
p. 458-
1 p.
|
artikel
|
| 81 |
4141. Theoretical studies of Si and GaAs surfaces and initial steps in the oxidation. (USA)
|
|
|
1979
|
29 |
11-12 |
p. 455-
1 p.
|
artikel
|
| 82 |
4185. The role of chemisorption in plasma etching. (USA)
|
|
|
1979
|
29 |
11-12 |
p. 460-
1 p.
|
artikel
|
| 83 |
4167. The structure and growth of thin films of lead telluride and lead selenide condensed in vacuum on to amorphous substrates. (GB)
|
|
|
1979
|
29 |
11-12 |
p. 458-
1 p.
|
artikel
|
| 84 |
4180. The vacuum system for the Daresbury synchrotron radiation source. (GB)
|
|
|
1979
|
29 |
11-12 |
p. 460-
1 p.
|
artikel
|
| 85 |
The vacuum use of perfluoro polyether
|
Laurenson, L
|
|
1979
|
29 |
11-12 |
p. 433-437
5 p.
|
artikel
|
| 86 |
4161. Trends in the development and use of turbomolecular pumps. (GB)
|
|
|
1979
|
29 |
11-12 |
p. 457-458
2 p.
|
artikel
|
| 87 |
4177. Two-step process for thin films of tin oxide
|
|
|
1979
|
29 |
11-12 |
p. 459-
1 p.
|
artikel
|
| 88 |
4206. UPS and LEED studies of GaAs (110) and (111) As surfaces. (USA)
|
|
|
1979
|
29 |
11-12 |
p. 463-
1 p.
|
artikel
|
| 89 |
Vacuum gauge calibration by the static method
|
Berman, A
|
|
1979
|
29 |
11-12 |
p. 417-425
9 p.
|
artikel
|
| 90 |
4178. Vacuum system for an intense pulsed neutron source at the Rutherford Laboratory. (GB)
|
|
|
1979
|
29 |
11-12 |
p. 459-460
2 p.
|
artikel
|
| 91 |
4198. Wave functions and (110) surface structure of III–V compounds. (USA)
|
|
|
1979
|
29 |
11-12 |
p. 462-
1 p.
|
artikel
|
| 92 |
Workshop notes and short contributions
|
Wittstock, J
|
|
1979
|
29 |
11-12 |
p. 451-
1 p.
|
artikel
|
| 93 |
4215. XPS measurements of abrupt Ge-GaAs heterojunction interfaces. (USA)
|
|
|
1979
|
29 |
11-12 |
p. 464-
1 p.
|
artikel
|
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