no |
title |
author |
magazine |
year |
volume |
issue |
page(s) |
type |
1 |
2. An uhv system for in situ preparation and analysis of thin films and surfaces
|
Shapira, Y. |
|
1978 |
28 |
12 |
p. 523-526 4 p. |
article |
2 |
8. A specimen-exchange device for an ultra-high vacuum atom-probe field-ion microscope
|
Wagner, Alfred |
|
1978 |
28 |
12 |
p. 543-545 3 p. |
article |
3 |
6. Conductivity effects in amorphous chalcogenide films
|
Yaniv, Zvi |
|
1978 |
28 |
12 |
p. 535-539 5 p. |
article |
4 |
12. Controlled deposition of protective aluminum films on aircraft steels
|
Oron, Moshé |
|
1978 |
28 |
12 |
p. 567-570 4 p. |
article |
5 |
10. Further developments with single structure vapour pumping groups
|
Dennis, N.T.M. |
|
1978 |
28 |
12 |
p. 551-558 8 p. |
article |
6 |
9. Improvement of electron gun brightness in conventional scanning electron microscope (SEM) by coating its tungsten filament with a zirconium carbide (ZrC) thin film
|
Oron, Moshé |
|
1978 |
28 |
12 |
p. 547-550 4 p. |
article |
7 |
13. Measurement of the lattice constant of SiGe heteroepitaxial layers grown on a silicon substrate
|
Aharoni, Herzl |
|
1978 |
28 |
12 |
p. 571-578 8 p. |
article |
8 |
7. Requirements for comprehensive surface analysis
|
|
|
1978 |
28 |
12 |
p. 541- 1 p. |
article |
9 |
The fifth Israeli vacuum congress
|
|
|
1978 |
28 |
12 |
p. 513- 1 p. |
article |
10 |
11. Thermal outgassing behaviour of Inconel 600 after different methods of surface preparation
|
Reiter, F.W. |
|
1978 |
28 |
12 |
p. 559-566 8 p. |
article |
11 |
3. Trends in the development of turbomolecular vacuum pumps
|
Henning, J. |
|
1978 |
28 |
12 |
p. 527- 1 p. |
article |
12 |
1. Ultra-high vacuum systems for surface research
|
Margoninski, Y. |
|
1978 |
28 |
12 |
p. 515-521 7 p. |
article |
13 |
5. VCNR type characteristic in thin film amorphous TeGeAsSi films
|
Yaniv, Zvi |
|
1978 |
28 |
12 |
p. 533-534 2 p. |
article |
14 |
4. Vertical electrode configuration to avoid contaminating particles in sputtered ZnO thin films
|
Maniv, S. |
|
1978 |
28 |
12 |
p. 529-532 4 p. |
article |