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                             109 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 112. A compression vacuum gauge 1973
 23 2 p. 71-
1 p.
 artikel
2 174. Activation of palladium membrane by titanium hydride with the aim of reducing temperature of hydrogen diffusion purification 1973
 23 2 p. 75-
1 p.
 artikel
3 111. A mechanical vacuum pump 1973
 23 2 p. 71-
1 p.
 artikel
4 128. A method of improving the parameters of diffusion layers in gallium arsenide 1973
 23 2 p. 72-
1 p.
 artikel
5 148. A method of producing coatings 1973
 23 2 p. 73-
1 p.
 artikel
6 149. An apparatus for vacuum sputtering 1973
 23 2 p. 73-
1 p.
 artikel
7 An improved technique for cleaning McLeod gauges Berman, A
 1973
 23 2 p. 61-
1 p.
 artikel
8 154. A non-alundized heater 1973
 23 2 p. 74-
1 p.
 artikel
9 137. Basic characteristics and origin of transitional layers in gallium arsenide autoepitaxy 1973
 23 2 p. 72-
1 p.
 artikel
10 Behaviour of impurity atoms and adsorbed oxygen atoms on (001) face of iron epitaxial film Kanaji, T
 1973
 23 2 p. 55-59
5 p.
 artikel
11 87. Cold cathodes based on thread-like single crystals 1973
 23 2 p. 69-
1 p.
 artikel
12 123. Commercial ellipsometer and investigation of the kinetics of oxide films on silicon 1973
 23 2 p. 72-
1 p.
 artikel
13 143. Comparison of structure of island gold condensates on NaCl obtained by thermal evaporation and cathodic sputtering 1973
 23 2 p. 73-
1 p.
 artikel
14 99. Comparison of the emission properties of metallic photocathodes in the region of soft X-ray radiation 1973
 23 2 p. 70-
1 p.
 artikel
15 130. Concentration profiles from ion implantation and their utilization for fabrication of varicaps and bipolar transistors 1973
 23 2 p. 72-
1 p.
 artikel
16 95. Conditions of gas discharge initiation in plane two-electrode gap with hot cathode at low pressure 1973
 23 2 p. 69-70
2 p.
 artikel
17 141. Configuration of inter-domain boundaries and coercive force of two-layer ferromagnetic films 1973
 23 2 p. 73-
1 p.
 artikel
18 181. Copper alloy refined through internal oxidation 1973
 23 2 p. 76-
1 p.
 artikel
19 108. Creation of a high-power amplifier based on a beam-plasma system 1973
 23 2 p. 70-
1 p.
 artikel
20 144. Deformational splitting of impurity adsorption band in heteroepitaxial n-type germanium films 1973
 23 2 p. 73-
1 p.
 artikel
21 104. Determination of the time of discharge development with hot cathode at low pressures taking account of the motion of positive ions 1973
 23 2 p. 70-
1 p.
 artikel
22 150. Device for fixing substrates in vacuum installations 1973
 23 2 p. 73-
1 p.
 artikel
23 109. Diffusion of hydrogen through palladium at low pressures and hydrogen pumping through a palladium diaphragm in a hydrogen generator system 1973
 23 2 p. 70-71
2 p.
 artikel
24 172. Disturbance of oxide films by electron beams 1973
 23 2 p. 75-
1 p.
 artikel
25 139. Domain structure and the remagnetization process in thin ferromagnetic films of elinvar composition 1973
 23 2 p. 72-73
2 p.
 artikel
26 157. Economic gas-discharge light source for technological equipments 1973
 23 2 p. 74-
1 p.
 artikel
27 Editorial Board 1973
 23 2 p. IFC-
1 p.
 artikel
28 133. Electrical properties of p-n junctions in n-GaP 1973
 23 2 p. 72-
1 p.
 artikel
29 142. Electroluminescence of CdF2Mn films 1973
 23 2 p. 73-
1 p.
 artikel
30 115. Electromagnetic valves for backing pumps 1973
 23 2 p. 71-
1 p.
 artikel
31 98. Emission of oxide cathodes under impact of positive ions of potassium and electrons 1973
 23 2 p. 70-
1 p.
 artikel
32 122. Epitaxial growth of thin films of the system CdS-In2S3 1973
 23 2 p. 71-
1 p.
 artikel
33 159. Evaluation of the degree of radiation danger of high-voltage electron devices 1973
 23 2 p. 74-
1 p.
 artikel
34 Gas absorption and outgassing of metals Malev, MD
 1973
 23 2 p. 43-50
8 p.
 artikel
35 140. Hall effect and magnetoresistance of thin films of CoNi alloys 1973
 23 2 p. 73-
1 p.
 artikel
36 110. High-vacuum systems with cryogenic pumping at the forevacuum and high-vacuum stages 1973
 23 2 p. 71-
1 p.
 artikel
37 171. Influence of boron and phosphorus ion bombardment on the etching rate of thermally grown oxide 1973
 23 2 p. 75-
1 p.
 artikel
38 173. Influence of electrostatic field on surface diffusion in a field electron emitter 1973
 23 2 p. 75-
1 p.
 artikel
39 134. Influence of impurities on the growth of silicon epitaxial films at reduced temperatures 1973
 23 2 p. 72-
1 p.
 artikel
40 161. Influence of initial velocities on image contrast in an emission electron microscope 1973
 23 2 p. 74-
1 p.
 artikel
41 169. Influence of ion bombardment on the redistribution of charge carriers in a diffusion layer 1973
 23 2 p. 75-
1 p.
 artikel
42 86. Influence of oil on changes in the coefficient of secondary electron emission of emitters under electron bombardment 1973
 23 2 p. 69-
1 p.
 artikel
43 91. Influence of the microrelief on an emitting cathode surface on its emission properties 1973
 23 2 p. 69-
1 p.
 artikel
44 136. Influence of thickness on electrical strength of dielectric films 1973
 23 2 p. 72-
1 p.
 artikel
45 103. Influence of volume and surface charges on the operation of plasma display device 1973
 23 2 p. 70-
1 p.
 artikel
46 146. Influencing the evaporation rate of zinc oxide by shortwave light 1973
 23 2 p. 73-
1 p.
 artikel
47 119. Interference method of thickness monitoring of epitaxial films 1973
 23 2 p. 71-
1 p.
 artikel
48 100. Investigation of composition thermionic emitters based on lanthanum hexaboride 1973
 23 2 p. 70-
1 p.
 artikel
49 94. Investigation of field electron emitters based on chromium 1973
 23 2 p. 69-
1 p.
 artikel
50 125. Investigation of four-layer epitaxial high-voltage silicon p +-n-p-n + structures 1973
 23 2 p. 72-
1 p.
 artikel
51 116. Investigation of injection characteristics of symmetrical PIN-diodes prepared by the method of ion implantation 1973
 23 2 p. 71-
1 p.
 artikel
52 170. Investigation of interface levels in SiSiO2 structures after ion bombardment 1973
 23 2 p. 75-
1 p.
 artikel
53 147. Investigation of intrinsic stresses in vacuum-evaporated thin films 1973
 23 2 p. 73-
1 p.
 artikel
54 117. Investigation of properties and applications for protection of p-n junction of oxide film prepared by the bombardment of silicon by atomic oxygen ions 1973
 23 2 p. 71-
1 p.
 artikel
55 127. Investigation of semiconductor converters transparent in infra-red region of solar spectrum 1973
 23 2 p. 72-
1 p.
 artikel
56 176. Investigation of semiconductor devices with a scanning electron microscope 1973
 23 2 p. 75-
1 p.
 artikel
57 135. Investigation of some electrical and recombination properties of the system SiSiO2 1973
 23 2 p. 72-
1 p.
 artikel
58 124. Investigation of some properties of MIS structures with aluminium oxide films 1973
 23 2 p. 72-
1 p.
 artikel
59 158. Investigation of the duration of arcing in vacuum on switching-off direct current 1973
 23 2 p. 74-
1 p.
 artikel
60 177. Ion current integrator 1973
 23 2 p. 75-
1 p.
 artikel
61 162. Ion focusing of an electron beam in a transverse gas flow 1973
 23 2 p. 74-
1 p.
 artikel
62 118. Low-frequency current noise in single crystals and thin films of CdSe in alternating electric field 1973
 23 2 p. 71-
1 p.
 artikel
63 89. Low-frequency oscillations in the weakly ionized plasma of a high-frequency discharge in a magnetic field 1973
 23 2 p. 69-
1 p.
 artikel
64 138. Magnetic compensation in iron-gadolinium and iron-terbium thin films 1973
 23 2 p. 72-
1 p.
 artikel
65 101. Manifestation of structure in electron energy distribution functions and determination of the effective cross sections for inelastic processes 1973
 23 2 p. 70-
1 p.
 artikel
66 187. Measuring the H/D ratio by compensation with type MI-1305 mass spectrometer 1973
 23 2 p. 76-
1 p.
 artikel
67 114. Mechanism for transmitting rotatory motion into a vacuum 1973
 23 2 p. 71-
1 p.
 artikel
68 186. Method of determining the diffusion coefficient of gases into dielectric materials 1973
 23 2 p. 76-
1 p.
 artikel
69 153. Method of determining the emission characteristics of cathodes in electrical vacuum apparatus 1973
 23 2 p. 74-
1 p.
 artikel
70 185. Method of joining glass to parts made from a ferrochromium alloy 1973
 23 2 p. 76-
1 p.
 artikel
71 113. Method of moving components situated in a hermetically-sealed space 1973
 23 2 p. 71-
1 p.
 artikel
72 152. Method of preparing a cathode unit with a profiled side surface 1973
 23 2 p. 74-
1 p.
 artikel
73 160. Method of preparing an oxide cathode 1973
 23 2 p. 74-
1 p.
 artikel
74 179. Nature of luminescence centres in an anodic oxide film on aluminium 1973
 23 2 p. 75-
1 p.
 artikel
75 New products and developments 1973
 23 2 p. 63-68
6 p.
 artikel
76 175. Non-contact method of checking parameters of semiconductor structures with directed electron beam 1973
 23 2 p. 75-
1 p.
 artikel
77 106. Non-symmetrical density distribution of particles in a gas-discharge plasma 1973
 23 2 p. 70-
1 p.
 artikel
78 Notes for contributors 1973
 23 2 p. 62-
1 p.
 artikel
79 163. Observation of dielectrics in the scanning electron microscope 1973
 23 2 p. 74-
1 p.
 artikel
80 97. On calculation of cathode potential fall in a hot cathode discharge 1973
 23 2 p. 70-
1 p.
 artikel
81 167. Optical adsorption in germanium subjected to oxygen-ion bombardment 1973
 23 2 p. 75-
1 p.
 artikel
82 166. Optical properties of Si and Ge layers disordered by ionic bombardment 1973
 23 2 p. 75-
1 p.
 artikel
83 156. Pre-commutation noise in television pick-up tubes 1973
 23 2 p. 74-
1 p.
 artikel
84 121. Preparation and properties of germanium nitride films 1973
 23 2 p. 71-
1 p.
 artikel
85 132. Preparation methods and properties of some thermoelectrical materials 1973
 23 2 p. 72-
1 p.
 artikel
86 145. Preparation of epitaxial ZnS films on GaAs in an open system with hydrogen flow 1973
 23 2 p. 73-
1 p.
 artikel
87 155. Rapidly-removable lid for vacuum apparatus 1973
 23 2 p. 74-
1 p.
 artikel
88 165. Redistribution of secondary electrons on target surface 1973
 23 2 p. 75-
1 p.
 artikel
89 164. Secondary electron emission from the metal-fibre screen of an electron-beam tube for electrostatic printing 1973
 23 2 p. 74-
1 p.
 artikel
90 151. Semi-automatic device for winding spirals 1973
 23 2 p. 73-74
2 p.
 artikel
91 184. Solder for joining electrical-vacuum parts 1973
 23 2 p. 76-
1 p.
 artikel
92 182. Solder for joining parts of electrical vacuum apparatus 1973
 23 2 p. 76-
1 p.
 artikel
93 183. Solder for vacuum-tight soldering 1973
 23 2 p. 76-
1 p.
 artikel
94 88. Some characteristics of glow discharge with electrodes, the surfaces of which are covered by dielectrics 1973
 23 2 p. 69-
1 p.
 artikel
95 90. Some characteristics of relaxation oscillations in an He-Ne discharge with hot cathode 1973
 23 2 p. 69-
1 p.
 artikel
96 93. Some emission properties of film cathodes 1973
 23 2 p. 69-
1 p.
 artikel
97 107. Some operating characteristics of a pulse gas-discharge device with hollow-cathode starting electrode 1973
 23 2 p. 70-
1 p.
 artikel
98 Sorption kinetics of oxygen at very low pressures by zirconium Nagasaka, M
 1973
 23 2 p. 51-54
4 p.
 artikel
99 126. Spectral distribution of photoconductivity of single crystals and films of TlGaSe2 1973
 23 2 p. 72-
1 p.
 artikel
100 168. Spectral-kinetic characteristics of radical-recombination luminescence in crystal-phosphors activated by manganese 1973
 23 2 p. 75-
1 p.
 artikel
101 120. Surface properties of heteroepitaxial germanium films 1973
 23 2 p. 71-
1 p.
 artikel
102 92. Temperature dependence of BaW110 system work function 1973
 23 2 p. 69-
1 p.
 artikel
103 96. Theory of discharge initiation in hot cathode thyratron 1973
 23 2 p. 70-
1 p.
 artikel
104 102. The probe method of monitoring the formation and destruction of oxide layers on metallic electrode surfaces under conditions of gas discharge 1973
 23 2 p. 70-
1 p.
 artikel
105 131. Thermal annealing of inversion silicon layers doped by nitrogen and characteristics of p-n junctions 1973
 23 2 p. 72-
1 p.
 artikel
106 180. Thermal decomposition of n-pentane. 1. Rate-pressure relations and survey of reaction products 1973
 23 2 p. 76-
1 p.
 artikel
107 105. Thermionic properties of borides of transition metals of the VI group 1973
 23 2 p. 70-
1 p.
 artikel
108 129. Ultra-high frequency transistor prepared by ion implantation 1973
 23 2 p. 72-
1 p.
 artikel
109 178. Use of a medical X-ray image intensifier in Laue investigations 1973
 23 2 p. 75-
1 p.
 artikel
                             109 gevonden resultaten
 
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