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                             131 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 1220. Analysis of thin surface layers and impurity profiles by back-scattering and channeling of MeV helium ions 1972
 22 12 p. 665-
1 p.
 artikel
2 1230. Application of electron beam for zone refining of refractory materials 1972
 22 12 p. 666-
1 p.
 artikel
3 1222. Application of ion implantation in MOS FET technology 1972
 22 12 p. 666-
1 p.
 artikel
4 1146. Application of thoria cathodes in magnetrons 1972
 22 12 p. 659-
1 p.
 artikel
5 Author index of abstracts 1972
 22 12 p. 668-
1 p.
 artikel
6 1233. A variant of the sublimation method of preparation of CdS single crystals 1972
 22 12 p. 666-
1 p.
 artikel
7 1239. Axially balanced ceramic-to-metal seals in construction of high-power transmitting valves 1972
 22 12 p. 667-
1 p.
 artikel
8 1140. Calculation of probability of exit of electrons from dielectrics during secondary emission and external photoeffect 1972
 22 12 p. 659-
1 p.
 artikel
9 1186. Characteristics of thin polycrystalline selenium films 1972
 22 12 p. 663-
1 p.
 artikel
10 1179. Charge carrier exchange between semiconductor and insulator 1972
 22 12 p. 662-663
2 p.
 artikel
11 1183. Conduction and luminescence in metal - dielectric - metal 1972
 22 12 p. 663-
1 p.
 artikel
12 1162. Construction of cold traps for vacuum systems used in the Lamina factory 1972
 22 12 p. 661-
1 p.
 artikel
13 1178. Current and breakdown characteristics of amorphous SIO2 in metal-oxide-semiconductor structure 1972
 22 12 p. 662-
1 p.
 artikel
14 1227. Deceleration of protons in chromiun and copper 1972
 22 12 p. 666-
1 p.
 artikel
15 1195. Deposition of thin films by electrical explosion of conductors 1972
 22 12 p. 664-
1 p.
 artikel
16 1217. Deterioration of cathodolumiscent screens on fibre-optical substrates due to electron irradiation 1972
 22 12 p. 665-
1 p.
 artikel
17 1229. Development works on high-purity metals for electronics 1972
 22 12 p. 666-
1 p.
 artikel
18 1198. Distribution of Al in epitaxial films of Ga x Al1−x As obtained by liquid-phase epitaxy 1972
 22 12 p. 664-
1 p.
 artikel
19 1168. Doping profile measurements of epitaxial gallium arsenide films 1972
 22 12 p. 661-
1 p.
 artikel
20 1139. Electrical properties of calcium-strontium oxide in barium vapour 1972
 22 12 p. 659-
1 p.
 artikel
21 1202. Electrical properties of epitaxial films of n-GaAs 1972
 22 12 p. 664-
1 p.
 artikel
22 1138. Electronic phase transformations and instability phenomena during adsorption on semiconductors 1972
 22 12 p. 659-
1 p.
 artikel
23 1174. Electronic processes on the interface semiconductor-dielectric 1972
 22 12 p. 662-
1 p.
 artikel
24 1170. Electronic properties of thin films of ZnO 1972
 22 12 p. 662-
1 p.
 artikel
25 Electrostatic ion pump 1972
 22 12 p. 653-
1 p.
 artikel
26 1187. Eletrical and optical studies on ultra thin Al2O3 tunnel structures 1972
 22 12 p. 663-
1 p.
 artikel
27 1225. Energy losses of electrons in aluminium alloys with 3d-transition metals 1972
 22 12 p. 666-
1 p.
 artikel
28 1165. ESR and electrical properties of ion implanted layers in semiconductors 1972
 22 12 p. 661-
1 p.
 artikel
29 European expansion by electrotech 1972
 22 12 p. 656-
1 p.
 artikel
30 1216. Evaluation of sagging of the plane frontal window of a high-vacuum device 1972
 22 12 p. 665-
1 p.
 artikel
31 1212. Evaporation of films of complex compositions 1972
 22 12 p. 665-
1 p.
 artikel
32 1147. External multiphoton effect from dielectrics and intrinsic semiconductors 1972
 22 12 p. 659-
1 p.
 artikel
33 Extractor ionization gauge 1972
 22 12 p. 653-654
2 p.
 artikel
34 Factors limiting the attainment of ultra-high vacuum below 10−10 torr Carter, G
 1972
 22 12 p. 643-649
7 p.
 artikel
35 1232. Formation of excrescences on sublimating in vacuum surface of silicon 1972
 22 12 p. 666-
1 p.
 artikel
36 1141. Generality of basic characteristics under field electron emission of n- and p-type semiconductors 1972
 22 12 p. 659-
1 p.
 artikel
37 1167. Generation of anomalous photovoltages 1972
 22 12 p. 661-
1 p.
 artikel
38 1238. Glass-to-metal vacuum seal obtained by electroforming 1972
 22 12 p. 667-
1 p.
 artikel
39 Helium leak detectors 1972
 22 12 p. 657-
1 p.
 artikel
40 Helium leak detector with remote indication 1972
 22 12 p. 653-
1 p.
 artikel
41 1219. Hermetization of high-voltage anode leads of electron-beam tubes with flexible cables 1972
 22 12 p. 665-
1 p.
 artikel
42 1193. High-ohmic silicon films obtained by submilation in vacuum on low-ohmic substrates 1972
 22 12 p. 664-
1 p.
 artikel
43 High pressure ionisation gauge 1972
 22 12 p. 654-
1 p.
 artikel
44 Hot pressing system 1972
 22 12 p. 655-
1 p.
 artikel
45 1152. Improvement of production systems for vacuum metallization of quartz resonators 1972
 22 12 p. 660-
1 p.
 artikel
46 Industrial control equipment 1972
 22 12 p. 657-
1 p.
 artikel
47 1143. Influence of electric field and current on the evaporation rate of the barium component from an oxide cathode 1972
 22 12 p. 659-
1 p.
 artikel
48 1190. Influence of interphase interaction on the character of nucleation in the condensed phase 1972
 22 12 p. 663-
1 p.
 artikel
49 1235. Influence of natural defects on electrical properties of A II B VI type compounds 1972
 22 12 p. 666-
1 p.
 artikel
50 1214. Influence of roughness of oxide coating of cathodes on internal rube short-circuiting 1972
 22 12 p. 665-
1 p.
 artikel
51 1194. Influence of slow electrons on the resistance of cadmium selenide films 1972
 22 12 p. 664-
1 p.
 artikel
52 1181. Influence of volume traps on the capacitance at the CdSe-SiO x interface 1972
 22 12 p. 663-
1 p.
 artikel
53 1164. Instability in cadmium selenide TFT 1972
 22 12 p. 661-
1 p.
 artikel
54 Institute of physics announcements physical methods for surface chemistry 1972
 22 12 p. 657-
1 p.
 artikel
55 1201. Investigation and preparation of thin CdS films on single crystal substrates of ZnO 1972
 22 12 p. 665-
1 p.
 artikel
56 1145. Investigation of porous layers of MgO as transmission emitters for preliminary amplification of image brightness 1972
 22 12 p. 659-
1 p.
 artikel
57 1199. Investigation of the CdSe-SiOx system properties by the MIS structure capacitance measurement method 1972
 22 12 p. 664-
1 p.
 artikel
58 1226. Ion etching and its application 1972
 22 12 p. 666-
1 p.
 artikel
59 Mass flowmeters 1972
 22 12 p. 657-
1 p.
 artikel
60 Mass spectrometer for educational use 1972
 22 12 p. 654-
1 p.
 artikel
61 1189. Mechanism of condensation of molecular vapour on epitaxial substrate 1972
 22 12 p. 663-
1 p.
 artikel
62 1185. Methodology of investigation of anomalies occuring during the formation of metal-semiconductor contacts 1972
 22 12 p. 663-
1 p.
 artikel
63 1158. Methods and equipment for measurement of vacuum pump parameters 1972
 22 12 p. 660-661
2 p.
 artikel
64 1150. Modern pumping systems with diffusion pumps 1972
 22 12 p. 660-
1 p.
 artikel
65 Modular ion implantation systems 1972
 22 12 p. 654-
1 p.
 artikel
66 Molecular beam apparatus 1972
 22 12 p. 655-656
2 p.
 artikel
67 MRC/Sloan marketing agreement 1972
 22 12 p. 656-
1 p.
 artikel
68 1221. New masking methods for microelectronics 1972
 22 12 p. 665-666
2 p.
 artikel
69 1211. Observation of whiskers in evaporated films of CdS 1972
 22 12 p. 665-
1 p.
 artikel
70 1200. On the kinetics and conditions of optimum growth of epitaxial films of GaAs 1972
 22 12 p. 664-
1 p.
 artikel
71 1171. Optical and electrical properties of sputtered amorphous silicon 1972
 22 12 p. 662-
1 p.
 artikel
72 Optical properties of thin films 1972
 22 12 p. 657-
1 p.
 artikel
73 1166. Photoelectric properties of PbTe epitaxial 1972
 22 12 p. 661-
1 p.
 artikel
74 1142. Photoemission from aggregate F-centres in KCl and KBr crystals 1972
 22 12 p. 659-
1 p.
 artikel
75 1191. Photoemission investigation of energy structure of cadmium selenium films 1972
 22 12 p. 663-664
2 p.
 artikel
76 1173. Preparation and properties of silicon nitride films and their applications 1972
 22 12 p. 662-
1 p.
 artikel
77 1177. Preparation and some electrophysical parameters of MIS structures 1972
 22 12 p. 662-
1 p.
 artikel
78 1231. Preparation, morphology and structure of needle-like germanium crystals 1972
 22 12 p. 666-
1 p.
 artikel
79 1203. Preparation of high-quality SiO2 films by the method of thermal oxidation 1972
 22 12 p. 664-
1 p.
 artikel
80 1234. Preparation of mixed single crystals by simultaneous sublimation of germaniun selenide and germanium sulphide in vacuum 1972
 22 12 p. 666-
1 p.
 artikel
81 1196. Preparation of Ta2O5 thin films by three-electrode cathodic sputtering 1972
 22 12 p. 664-
1 p.
 artikel
82 1197. Preparation of thin ferroelectric films type ABO3 1972
 22 12 p. 664-
1 p.
 artikel
83 1157. Problems of diffusion pump design 1972
 22 12 p. 660-
1 p.
 artikel
84 Production and measurement of ultra-high vacuum below 10−10 torr de Cherniony, L
 1972
 22 12 p. 635-642
8 p.
 artikel
85 1175. Production and properties of MIS structures on the basis of germanium nitride 1972
 22 12 p. 662-
1 p.
 artikel
86 1155. Properties of a modified ion-sorption pump with cold cathode 1972
 22 12 p. 660-
1 p.
 artikel
87 1156. Properties of sorption pumps and zeolite traps 1972
 22 12 p. 660-
1 p.
 artikel
88 1154. Properties of the orbitron ion-sorption pump type PO-2000 1972
 22 12 p. 660-
1 p.
 artikel
89 Pulse bias sputtering system 1972
 22 12 p. 654-
1 p.
 artikel
90 1204. Radio frequency sputtering of thin films for microelectronics 1972
 22 12 p. 664-
1 p.
 artikel
91 1180. Reduction of positive charge in SIO2 layers by PbO 1972
 22 12 p. 663-
1 p.
 artikel
92 1215. Removal of the organic layer from the glass envelope black-and-white TV tube during vacuum treatment 1972
 22 12 p. 665-
1 p.
 artikel
93 1188. Reproducibility of electrical characteristics of films based on tantalum 1972
 22 12 p. 663-
1 p.
 artikel
94 1205. Resistance profiles of epitaxial films 1972
 22 12 p. 664-
1 p.
 artikel
95 Roots pumps 1972
 22 12 p. 657-
1 p.
 artikel
96 1159. Rotary compression vacuum gauge with mercury drop 1972
 22 12 p. 661-
1 p.
 artikel
97 Rotary push-pull feedthrough 1972
 22 12 p. 655-
1 p.
 artikel
98 1161. Sealing of vacuum chambers 1972
 22 12 p. 661-
1 p.
 artikel
99 1144. Secondary electron emission in the region of high energies 1972
 22 12 p. 659-
1 p.
 artikel
100 Some parameters affecting the resistivity of vapour deposited CdS films Doucas, G
 1972
 22 12 p. 651-652
2 p.
 artikel
101 1218. Some requirements of glass and glass articles used in the production of photoelectron devices 1972
 22 12 p. 665-
1 p.
 artikel
102 Sony visit Wentgate 1972
 22 12 p. 656-
1 p.
 artikel
103 Straight-through valves 1972
 22 12 p. 654-655
2 p.
 artikel
104 1208. Structure of A II B VI epitaxial films in dependence on conditions of evaporation 1972
 22 12 p. 665-
1 p.
 artikel
105 1151. Technical parameters and arrangements of the vacuum evaporator type NA-500S 1972
 22 12 p. 660-
1 p.
 artikel
106 1228. Technology of stoichiometric gallium antimonide 1972
 22 12 p. 666-
1 p.
 artikel
107 1223. Temperature increase of solid samples caused by radiation of the IKS-14 infrared spectrometer source 1972
 22 12 p. 666-
1 p.
 artikel
108 1209. Texture of evaporated films of copper phthalocyanine 1972
 22 12 p. 665-
1 p.
 artikel
109 1169. The electrical conductivity of CdSe films prepared by vacuum evaporation 1972
 22 12 p. 661-
1 p.
 artikel
110 1207. The filling factor in thin films of γ-AgI 1972
 22 12 p. 665-
1 p.
 artikel
111 1236. The influence of contact layer thickness on some properties of reed relays 1972
 22 12 p. 666-
1 p.
 artikel
112 1182. The influence of ion bombardment on MOS structure properties 1972
 22 12 p. 663-
1 p.
 artikel
113 1176. The influence of the metallization on the charges in various MOS structures 1972
 22 12 p. 662-
1 p.
 artikel
114 1184. The influence of thermal treatment on the photovoltaic effect at the contact of tellurium thin films with different metals 1972
 22 12 p. 663-
1 p.
 artikel
115 1172. The inlfuence of annealing on electrical properties of thin vapour-deposited films of Cd3As2 1972
 22 12 p. 662-
1 p.
 artikel
116 1192. The method of preparation of thin films of semiconducting materials by directed crystallization 1972
 22 12 p. 664-
1 p.
 artikel
117 1213. The methods of hermetic-contact life-time comparison 1972
 22 12 p. 665-
1 p.
 artikel
118 1160. Thermoelastic demountable vacuum seals 1972
 22 12 p. 661-
1 p.
 artikel
119 1224. The theory of characteristics energy losses in transition metals 1972
 22 12 p. 666-
1 p.
 artikel
120 1206. Thickness of Al2O3 thin formed by anodic oxidation of Al 1972
 22 12 p. 664-
1 p.
 artikel
121 1163. Thin-film cadmium telluride selenide solar cell 1972
 22 12 p. 661-
1 p.
 artikel
122 1201. Thin-film Hall effect device of indium antimonide 1972
 22 12 p. 664-
1 p.
 artikel
123 Third Israeli vacuum congress, Haifa 1973: call for papers and advance notice 1972
 22 12 p. 657-
1 p.
 artikel
124 1237. Transition glasses from quartz glass to sodium calcium glass 1972
 22 12 p. 667-
1 p.
 artikel
125 1148. Two-photon absorption in solids 1972
 22 12 p. 659-
1 p.
 artikel
126 1149. Ultrahigh vacuum evaporation apparatus type NP-350-UW 1972
 22 12 p. 660-
1 p.
 artikel
127 1153. Vacuum evaporation apparatus with electron-beam evaporator 1972
 22 12 p. 660-
1 p.
 artikel
128 Vacuum flange gaskets 1972
 22 12 p. 654-
1 p.
 artikel
129 Varian/NRC catalogue 1972
 22 12 p. 657-
1 p.
 artikel
130 Vertical vacuum furnace 1972
 22 12 p. 655-
1 p.
 artikel
131 Wabco westinghouse enter UK market 1972
 22 12 p. 656-
1 p.
 artikel
                             131 gevonden resultaten
 
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