nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
Cation distribution in bismuth-doped M-type barium hexaferrite
|
Winotai, P. |
|
2000 |
35 |
11 |
p. 1747-1753 7 p. |
artikel |
2 |
Characterization of (Ba0.65Sr0.35)(Ti0.65Zr0.35)O3 thin film
|
Byun, Jae-Dong |
|
2000 |
35 |
11 |
p. 1755-1761 7 p. |
artikel |
3 |
Crystal growth of Sr2RuO4
|
Mao, Z.Q. |
|
2000 |
35 |
11 |
p. 1813-1824 12 p. |
artikel |
4 |
Dielectric properties of a multiple octahedral-cation system Pb[(Mg1/3Ta2/3),(Zn1/3Nb2/3)]O3 modified by Pb(Mg1/3Nb2/3)O3
|
Chae, Min-Chul |
|
2000 |
35 |
11 |
p. 1763-1773 11 p. |
artikel |
5 |
Growth and superconductivity of La-doped Bi-2201 whiskers
|
Jin, H |
|
2000 |
35 |
11 |
p. 1805-1812 8 p. |
artikel |
6 |
Kinetic effect of crystal growth on the absolute stability of a planar interface in undercooled melts
|
Li, Jinfu |
|
2000 |
35 |
11 |
p. 1775-1783 9 p. |
artikel |
7 |
Liquid phase sintering of (Zr,Sn)TiO4 microwave dielectric ceramics
|
Huang, Cheng-Liang |
|
2000 |
35 |
11 |
p. 1881-1888 8 p. |
artikel |
8 |
Low-temperature synthesis of pure and Mn-doped willemite phosphor (Zn2SiO4:Mn) in aqueous medium
|
Ahmadi, Temer S |
|
2000 |
35 |
11 |
p. 1869-1879 11 p. |
artikel |
9 |
Opto-electrical characterization of γ-In2Se2.5Te0.5thin layers☆ 1 1 ☆ This work is a part of the Ph.D. thesis defended by Mahieddine Emziane at the University of Nantes on December 2, 1998.
|
Emziane, M |
|
2000 |
35 |
11 |
p. 1849-1857 9 p. |
artikel |
10 |
Oxygen stoichiometry and the problem of the growth of (VO)2P2O7 single crystals
|
Prokofiev, A.V |
|
2000 |
35 |
11 |
p. 1859-1868 10 p. |
artikel |
11 |
Physical properties of the cation-mixed M′MPS3 phases
|
Manrı́quez, V. |
|
2000 |
35 |
11 |
p. 1889-1895 7 p. |
artikel |
12 |
Preparation of late transition metal selenides with different morphologies in ethylenediamine
|
Han, Z.H |
|
2000 |
35 |
11 |
p. 1825-1829 5 p. |
artikel |
13 |
Radioluminescence investigation of Nasicon materials
|
Brovetto, P. |
|
2000 |
35 |
11 |
p. 1797-1803 7 p. |
artikel |
14 |
Structure of Ti4AlN3—a layered Mn+1AXn nitride
|
Rawn, C.J |
|
2000 |
35 |
11 |
p. 1785-1796 12 p. |
artikel |
15 |
Superconductivity of hydrogen inserted LiNbO2
|
Kumada, N |
|
2000 |
35 |
11 |
p. 1743-1746 4 p. |
artikel |
16 |
Synthesis of ZnO with and without microwaves
|
Komarneni, Sridhar |
|
2000 |
35 |
11 |
p. 1843-1847 5 p. |
artikel |
17 |
Tunable color emission and solid solubility limit in Ba1−xCaxAl2O4:Eu0.001 2+ phosphors through the mixed states of CaAl2O4 and BaAl2O4
|
Ju, S.H |
|
2000 |
35 |
11 |
p. 1831-1835 5 p. |
artikel |
18 |
Wurtzite GaN epitaxial growth on Si(111) using silicon nitride as an initial layer
|
Liu, Hongxue |
|
2000 |
35 |
11 |
p. 1837-1842 6 p. |
artikel |