| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A flip chip interconnection and packaging system
|
|
|
1970
|
9 |
6 |
p. 456-
1 p.
|
artikel
|
| 2 |
An algorithm for the placement of large scale integrated circuit elements
|
|
|
1970
|
9 |
6 |
p. 459-
1 p.
|
artikel
|
| 3 |
Analysis of surface and bulk impurities in silicon single crystal slices by neutron activation
|
|
|
1970
|
9 |
6 |
p. 463-
1 p.
|
artikel
|
| 4 |
Analyzing and interpreting field failure data
|
|
|
1970
|
9 |
6 |
p. 453-
1 p.
|
artikel
|
| 5 |
Anomalous diffusion in semiconductors—A quantitative analysis
|
|
|
1970
|
9 |
6 |
p. 461-
1 p.
|
artikel
|
| 6 |
A redundancy analysis technique
|
|
|
1970
|
9 |
6 |
p. 454-
1 p.
|
artikel
|
| 7 |
Argon content of SiO2 films deposited by rf sputtering in argon
|
|
|
1970
|
9 |
6 |
p. 464-
1 p.
|
artikel
|
| 8 |
A software reliability program
|
|
|
1970
|
9 |
6 |
p. 456-
1 p.
|
artikel
|
| 9 |
A systems unavailability trade-off program
|
|
|
1970
|
9 |
6 |
p. 455-
1 p.
|
artikel
|
| 10 |
A unifying reliability analysis philosophy
|
|
|
1970
|
9 |
6 |
p. 455-
1 p.
|
artikel
|
| 11 |
Automatic impedance matching system for rf sputtering
|
|
|
1970
|
9 |
6 |
p. 465-466
2 p.
|
artikel
|
| 12 |
Automatic interconnection system for electronic components
|
|
|
1970
|
9 |
6 |
p. 459-
1 p.
|
artikel
|
| 13 |
A voltage variable resistor most
|
Townsend, W.G.
|
|
1970
|
9 |
6 |
p. 491-496
6 p.
|
artikel
|
| 14 |
Berechnung der Kapazitäts-und Induktivitätsbeläge ebener Streifenleitungen durch konforme Abbildung
|
|
|
1970
|
9 |
6 |
p. 460-
1 p.
|
artikel
|
| 15 |
Bipolar compatible MOS ICs
|
|
|
1970
|
9 |
6 |
p. 463-
1 p.
|
artikel
|
| 16 |
BS9000 and integrated circuits
|
|
|
1970
|
9 |
6 |
p. 450-
1 p.
|
artikel
|
| 17 |
Bulk trapping effect on carrier diffusion length as determined by the surface photovoltage method: Theory
|
|
|
1970
|
9 |
6 |
p. 462-463
2 p.
|
artikel
|
| 18 |
Calculation of the current density in the contacts of a thin film resistor
|
|
|
1970
|
9 |
6 |
p. 464-
1 p.
|
artikel
|
| 19 |
Calendar of International Conferences, Symposia, Lectures and Meetings of Interest
|
|
|
1970
|
9 |
6 |
p. 440-442
3 p.
|
artikel
|
| 20 |
Call for paper
|
|
|
1970
|
9 |
6 |
p. 443-444
2 p.
|
artikel
|
| 21 |
Characteristics of aluminum-silicon Schottky barrier diode
|
|
|
1970
|
9 |
6 |
p. 460-461
2 p.
|
artikel
|
| 22 |
Characteristic traits of semiconductor failures
|
|
|
1970
|
9 |
6 |
p. 452-
1 p.
|
artikel
|
| 23 |
Circuit design selection—A reliability factor
|
|
|
1970
|
9 |
6 |
p. 454-
1 p.
|
artikel
|
| 24 |
Comment on the paper “failure of aluminium contacts to silicon in shallow diffused transistors”
|
Cunningham, J.A.
|
|
1970
|
9 |
6 |
p. 515-516
2 p.
|
artikel
|
| 25 |
Computerized reliability analysis using REACT
|
|
|
1970
|
9 |
6 |
p. 450-
1 p.
|
artikel
|
| 26 |
Computers are like cancer because they are completely out of sync with their total environment
|
Gianelle, W.H.
|
|
1970
|
9 |
6 |
p. 437-
1 p.
|
artikel
|
| 27 |
Configuration management: The interface of enigneering, production, and quality control
|
|
|
1970
|
9 |
6 |
p. 448-
1 p.
|
artikel
|
| 28 |
Contribution of discrete and flat thick film resistors to logic circuit reliability
|
|
|
1970
|
9 |
6 |
p. 465-
1 p.
|
artikel
|
| 29 |
Controlled collapse reflow chip joining
|
|
|
1970
|
9 |
6 |
p. 457-458
2 p.
|
artikel
|
| 30 |
Correlation of reliability performance measurements
|
|
|
1970
|
9 |
6 |
p. 455-
1 p.
|
artikel
|
| 31 |
Courses in microelectronics and reliability
|
|
|
1970
|
9 |
6 |
p. 438-439
2 p.
|
artikel
|
| 32 |
Deep levels within the forbidden gap of silicon-on-sapphire films
|
|
|
1970
|
9 |
6 |
p. 461-
1 p.
|
artikel
|
| 33 |
Design of reliable yet economical industrial control systems
|
|
|
1970
|
9 |
6 |
p. 453-
1 p.
|
artikel
|
| 34 |
Detection of internal crystal imperfections
|
|
|
1970
|
9 |
6 |
p. 452-
1 p.
|
artikel
|
| 35 |
Determining optimum reliability programs
|
|
|
1970
|
9 |
6 |
p. 449-
1 p.
|
artikel
|
| 36 |
Die Berechnung des komplexen Widerstandes von Dünnschichtkondensatoren
|
|
|
1970
|
9 |
6 |
p. 465-
1 p.
|
artikel
|
| 37 |
Dielectric films for Ge planar devices
|
|
|
1970
|
9 |
6 |
p. 463-
1 p.
|
artikel
|
| 38 |
Dynamic performance of Schottky-barrier field-effect transistors
|
|
|
1970
|
9 |
6 |
p. 459-460
2 p.
|
artikel
|
| 39 |
Electrical properties of silicon doped with platinum
|
|
|
1970
|
9 |
6 |
p. 460-
1 p.
|
artikel
|
| 40 |
Electromigration in integrated circuits
|
|
|
1970
|
9 |
6 |
p. 451-
1 p.
|
artikel
|
| 41 |
Electron tunneling and contact resistance of metal-silicon contact barriers
|
|
|
1970
|
9 |
6 |
p. 461-
1 p.
|
artikel
|
| 42 |
Establishment of a redundancy priority for spacecraft elements
|
|
|
1970
|
9 |
6 |
p. 454-
1 p.
|
artikel
|
| 43 |
Failure analysis as a tool for determining semiconductor screens
|
|
|
1970
|
9 |
6 |
p. 456-
1 p.
|
artikel
|
| 44 |
Failure rate distribution of electronic components
|
Grange, J.M.
|
|
1970
|
9 |
6 |
p. 511-513
3 p.
|
artikel
|
| 45 |
F-111A Reliability
|
|
|
1970
|
9 |
6 |
p. 454-
1 p.
|
artikel
|
| 46 |
Fault trees for reliability analysis
|
|
|
1970
|
9 |
6 |
p. 449-450
2 p.
|
artikel
|
| 47 |
Flip-chip/beam-lead microbonding techniques
|
|
|
1970
|
9 |
6 |
p. 458-
1 p.
|
artikel
|
| 48 |
Gain degradation in planar transistors following emitter-base reverse biassing
|
|
|
1970
|
9 |
6 |
p. 450-451
2 p.
|
artikel
|
| 49 |
Generating IC artwork automatically saves time, prevents costly errors
|
|
|
1970
|
9 |
6 |
p. 458-
1 p.
|
artikel
|
| 50 |
Graphical method for the determination of junction parameters and of multiplication parameters
|
|
|
1970
|
9 |
6 |
p. 460-
1 p.
|
artikel
|
| 51 |
High-frequency properties and uses of MIS varactors
|
|
|
1970
|
9 |
6 |
p. 463-464
2 p.
|
artikel
|
| 52 |
High-speed interconnections using ECL-TC
|
|
|
1970
|
9 |
6 |
p. 457-
1 p.
|
artikel
|
| 53 |
Homogeneous attenuation elements in thin film technique
|
|
|
1970
|
9 |
6 |
p. 464-
1 p.
|
artikel
|
| 54 |
Hybrid integrated circuits with beam lead silicon chips and beam lead subcarriers
|
|
|
1970
|
9 |
6 |
p. 457-
1 p.
|
artikel
|
| 55 |
Hybrid microelectronics modules designed using basic thermal design guidelines
|
|
|
1970
|
9 |
6 |
p. 456-
1 p.
|
artikel
|
| 56 |
Integration density and power dissipation of MOS and bipolar shift registers—A comparison
|
Kasperkovitz, D.
|
|
1970
|
9 |
6 |
p. 497-501
5 p.
|
artikel
|
| 57 |
Introduction to microelectronics
|
G.W.A.D.,
|
|
1970
|
9 |
6 |
p. 467-
1 p.
|
artikel
|
| 58 |
Long-term storage and system reliability
|
|
|
1970
|
9 |
6 |
p. 453-454
2 p.
|
artikel
|
| 59 |
LSI reliability assessment and prediction
|
|
|
1970
|
9 |
6 |
p. 451-452
2 p.
|
artikel
|
| 60 |
Measurement of the ionization rates in diffused silicon p-n junctions
|
|
|
1970
|
9 |
6 |
p. 462-
1 p.
|
artikel
|
| 61 |
Metal bridging under planar oxide
|
|
|
1970
|
9 |
6 |
p. 451-
1 p.
|
artikel
|
| 62 |
Metal edge coverage and control of charge accumulation in rf shuttered insulators
|
|
|
1970
|
9 |
6 |
p. 463-
1 p.
|
artikel
|
| 63 |
Microwave properties of Schottky-barrier field-effect transistors
|
|
|
1970
|
9 |
6 |
p. 460-
1 p.
|
artikel
|
| 64 |
Micro-wire wrapping at 1·27 mm centres
|
|
|
1970
|
9 |
6 |
p. 458-
1 p.
|
artikel
|
| 65 |
Monolithic voltage regulators
|
|
|
1970
|
9 |
6 |
p. 460-
1 p.
|
artikel
|
| 66 |
MOS course—I. The basic structures
|
|
|
1970
|
9 |
6 |
p. 456-
1 p.
|
artikel
|
| 67 |
New beam-lead connection method boosts semiconductor memory yields
|
|
|
1970
|
9 |
6 |
p. 459-
1 p.
|
artikel
|
| 68 |
Non-destructive determination of carrier concentration in epitaxial silicon using a total internal reflection technique
|
|
|
1970
|
9 |
6 |
p. 461-
1 p.
|
artikel
|
| 69 |
On condition maintenance programs
|
|
|
1970
|
9 |
6 |
p. 455-
1 p.
|
artikel
|
| 70 |
On the separation of bulk and surface components of lifetime using the pulsed MOS capacitor
|
|
|
1970
|
9 |
6 |
p. 462-
1 p.
|
artikel
|
| 71 |
Open circuit voltage decay behavior of junction devices
|
|
|
1970
|
9 |
6 |
p. 461-
1 p.
|
artikel
|
| 72 |
Other approaches to integrated circuits
|
|
|
1970
|
9 |
6 |
p. 456-
1 p.
|
artikel
|
| 73 |
Papers to be published in future issues
|
|
|
1970
|
9 |
6 |
p. 468-
1 p.
|
artikel
|
| 74 |
People subsystem measurement for total reliability
|
|
|
1970
|
9 |
6 |
p. 450-
1 p.
|
artikel
|
| 75 |
Radio frequency sputtering in IC processing
|
|
|
1970
|
9 |
6 |
p. 459-
1 p.
|
artikel
|
| 76 |
Recent United Kingdom patents in microelectronics
|
|
|
1970
|
9 |
6 |
p. 445-447
3 p.
|
artikel
|
| 77 |
Re-emission of sputtered SiO2 during growth and its relation to film quality
|
|
|
1970
|
9 |
6 |
p. 465-
1 p.
|
artikel
|
| 78 |
Reliability at CNET
|
|
|
1970
|
9 |
6 |
p. 448-
1 p.
|
artikel
|
| 79 |
Reliability considerations pertinent to materials systems used in microbonding
|
|
|
1970
|
9 |
6 |
p. 457-
1 p.
|
artikel
|
| 80 |
Reliability factors in the design process
|
|
|
1970
|
9 |
6 |
p. 454-
1 p.
|
artikel
|
| 81 |
Reliability for N/C machines—A must!
|
|
|
1970
|
9 |
6 |
p. 453-
1 p.
|
artikel
|
| 82 |
Reliability physics—An assessment
|
|
|
1970
|
9 |
6 |
p. 450-
1 p.
|
artikel
|
| 83 |
Reliability physics investigation of integrated circuit failures
|
|
|
1970
|
9 |
6 |
p. 451-
1 p.
|
artikel
|
| 84 |
Reliability: SAS programme
|
|
|
1970
|
9 |
6 |
p. 452-
1 p.
|
artikel
|
| 85 |
Reliability testing uniformity, efficiency and economy needed
|
|
|
1970
|
9 |
6 |
p. 450-
1 p.
|
artikel
|
| 86 |
Repair queueing models for system availability
|
|
|
1970
|
9 |
6 |
p. 455-
1 p.
|
artikel
|
| 87 |
Review of vacuum deposition mechanisms—I.
|
|
|
1970
|
9 |
6 |
p. 464-
1 p.
|
artikel
|
| 88 |
Review of vacuum deposition mechanisms—II
|
|
|
1970
|
9 |
6 |
p. 465-
1 p.
|
artikel
|
| 89 |
Review of vacuum deposition mechanisms—III
|
|
|
1970
|
9 |
6 |
p. 466-
1 p.
|
artikel
|
| 90 |
Review of vacuum deposition mechanisms—IV
|
|
|
1970
|
9 |
6 |
p. 466-
1 p.
|
artikel
|
| 91 |
Role of product evaluation facility in reliability
|
|
|
1970
|
9 |
6 |
p. 449-
1 p.
|
artikel
|
| 92 |
Short pulse rating of integrated circuit conductors
|
Kroko, L.J.
|
|
1970
|
9 |
6 |
p. 503-508
6 p.
|
artikel
|
| 93 |
Silicon and silicon-dioxide processing for high-frequency MESFET preparation
|
|
|
1970
|
9 |
6 |
p. 464-
1 p.
|
artikel
|
| 94 |
Small signal equivalent circuit of an isotype heterojunction dominated by traps
|
|
|
1970
|
9 |
6 |
p. 460-
1 p.
|
artikel
|
| 95 |
Sodium migration through electron-gun evaporated Al2O3 and double layer Al2O3-SiO2 structures
|
|
|
1970
|
9 |
6 |
p. 462-
1 p.
|
artikel
|
| 96 |
Some Bayes estimates of long-run availability in a two-state system
|
|
|
1970
|
9 |
6 |
p. 448-
1 p.
|
artikel
|
| 97 |
Some economic aspects of maintenance versus redundancy for manned space stations
|
|
|
1970
|
9 |
6 |
p. 455-
1 p.
|
artikel
|
| 98 |
Specification X-1414: A reliability milestone
|
|
|
1970
|
9 |
6 |
p. 449-
1 p.
|
artikel
|
| 99 |
Spin-wave energy and source of inhomogeneities in thin films
|
|
|
1970
|
9 |
6 |
p. 466-
1 p.
|
artikel
|
| 100 |
Sputtering materials for electronic applications
|
|
|
1970
|
9 |
6 |
p. 464-
1 p.
|
artikel
|
| 101 |
Standard items form troubleshooter for electronic systems on British jets
|
|
|
1970
|
9 |
6 |
p. 456-
1 p.
|
artikel
|
| 102 |
Superlattice and negative differential conductivity in semiconductors
|
|
|
1970
|
9 |
6 |
p. 463-
1 p.
|
artikel
|
| 103 |
Systematic design language an advanced layout tool for artwork
|
|
|
1970
|
9 |
6 |
p. 458-
1 p.
|
artikel
|
| 104 |
System effectiveness analysis of complex systems
|
|
|
1970
|
9 |
6 |
p. 452-453
2 p.
|
artikel
|
| 105 |
Systems effectiveness evaluations
|
|
|
1970
|
9 |
6 |
p. 453-
1 p.
|
artikel
|
| 106 |
Termination resistance in thick-film resistors
|
|
|
1970
|
9 |
6 |
p. 464-
1 p.
|
artikel
|
| 107 |
Testing of mulilayer printed circuits' reliability
|
|
|
1970
|
9 |
6 |
p. 452-
1 p.
|
artikel
|
| 108 |
The choice of reflow soldering method
|
|
|
1970
|
9 |
6 |
p. 458-
1 p.
|
artikel
|
| 109 |
The effectiveness of part pre-failure analysis
|
|
|
1970
|
9 |
6 |
p. 451-
1 p.
|
artikel
|
| 110 |
The low-power-drain microelectronic VHF amplifier
|
|
|
1970
|
9 |
6 |
p. 459-
1 p.
|
artikel
|
| 111 |
Theory of low frequency noise in Si MOST'S
|
|
|
1970
|
9 |
6 |
p. 459-
1 p.
|
artikel
|
| 112 |
The philosophy of reliability
|
|
|
1970
|
9 |
6 |
p. 450-
1 p.
|
artikel
|
| 113 |
The precision manufacture and registration of masks for vacuum evaporation
|
|
|
1970
|
9 |
6 |
p. 459-
1 p.
|
artikel
|
| 114 |
The reliability of the VC 10 ILS equipment
|
Sargeant, H.
|
|
1970
|
9 |
6 |
p. 469-490
22 p.
|
artikel
|
| 115 |
The use of reflow soldered face bonded chips in hybrid integrated circuits
|
|
|
1970
|
9 |
6 |
p. 457-
1 p.
|
artikel
|
| 116 |
Thick film materials capabilities: 1969
|
|
|
1970
|
9 |
6 |
p. 466-
1 p.
|
artikel
|
| 117 |
Thick film technique—State of development and further outlooks
|
|
|
1970
|
9 |
6 |
p. 464-465
2 p.
|
artikel
|
| 118 |
Updating of reliability criteria documents
|
|
|
1970
|
9 |
6 |
p. 448-449
2 p.
|
artikel
|
| 119 |
Vapour-deposited thin-film diodes—A comparison
|
|
|
1970
|
9 |
6 |
p. 465-
1 p.
|
artikel
|
| 120 |
Variables in the thick-film screen printing process and their effect on register tolerances in large-scale production
|
|
|
1970
|
9 |
6 |
p. 466-
1 p.
|
artikel
|
| 121 |
Watt-megahertz ratings run second to high reliability in foreign r-f power transistors
|
|
|
1970
|
9 |
6 |
p. 452-
1 p.
|
artikel
|
| 122 |
X-ray measurement of elastic strain and annealing in semiconductors
|
|
|
1970
|
9 |
6 |
p. 461-
1 p.
|
artikel
|
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