| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Abstracts and book lists
|
Dummer, G.W.A.
|
|
1970
|
9 |
5 |
p. 357-
1 p.
|
artikel
|
| 2 |
A diffusion method for reliability prediction
|
|
|
1970
|
9 |
5 |
p. 379-
1 p.
|
artikel
|
| 3 |
A faster generation of MOS devices with low thresholds is riding the crest of the new wave, silicon-gate ICs
|
|
|
1970
|
9 |
5 |
p. 390-
1 p.
|
artikel
|
| 4 |
A history of value engineering
|
|
|
1970
|
9 |
5 |
p. 380-
1 p.
|
artikel
|
| 5 |
Aluminum metallization—Advantages and limitations for integrated circuit applications
|
|
|
1970
|
9 |
5 |
p. 391-
1 p.
|
artikel
|
| 6 |
An algorithm to determine the reliability of a complex system
|
|
|
1970
|
9 |
5 |
p. 383-
1 p.
|
artikel
|
| 7 |
Analysis of mission-oriented systems
|
|
|
1970
|
9 |
5 |
p. 383-
1 p.
|
artikel
|
| 8 |
Analysis of reliability data from operational control equipment
|
|
|
1970
|
9 |
5 |
p. 384-
1 p.
|
artikel
|
| 9 |
Analysis of television test and field data affected by spread in running time
|
|
|
1970
|
9 |
5 |
p. 384-385
2 p.
|
artikel
|
| 10 |
Analyzing 10 years of reporting on faulty components in carrier systems
|
|
|
1970
|
9 |
5 |
p. 384-
1 p.
|
artikel
|
| 11 |
A progress report on international standardization in the field of electronic reliability
|
|
|
1970
|
9 |
5 |
p. 381-
1 p.
|
artikel
|
| 12 |
A specification for quality (reliability) management, AvP92
|
|
|
1970
|
9 |
5 |
p. 381-
1 p.
|
artikel
|
| 13 |
A time-dependent complex system with pre-emptive priority repairs
|
|
|
1970
|
9 |
5 |
p. 383-
1 p.
|
artikel
|
| 14 |
At last, a bipolar shift register with the same bit capacity as MOS
|
|
|
1970
|
9 |
5 |
p. 389-
1 p.
|
artikel
|
| 15 |
A view of the reliability on solid tantalum capacitors
|
|
|
1970
|
9 |
5 |
p. 382-
1 p.
|
artikel
|
| 16 |
Bayesian analysis of the Weibull process with unknown scale and shape parameters
|
|
|
1970
|
9 |
5 |
p. 379-
1 p.
|
artikel
|
| 17 |
British Railway's experience with electronic control gear on locomotives: 1966–1968
|
|
|
1970
|
9 |
5 |
p. 385-
1 p.
|
artikel
|
| 18 |
Calendar of International Conferences, Symposia, Lectures and Meetings of Interest
|
|
|
1970
|
9 |
5 |
p. 373-374
2 p.
|
artikel
|
| 19 |
Call for papers
|
|
|
1970
|
9 |
5 |
p. 375-376
2 p.
|
artikel
|
| 20 |
Capacitor techniques for integrated circuit application
|
|
|
1970
|
9 |
5 |
p. 388-
1 p.
|
artikel
|
| 21 |
Chip bonding: promises and perils
|
|
|
1970
|
9 |
5 |
p. 387-
1 p.
|
artikel
|
| 22 |
Circuit tolerancing—A new approach to hybrid manufacture
|
|
|
1970
|
9 |
5 |
p. 388-
1 p.
|
artikel
|
| 23 |
Complete sample estimation techniques for reparameterized Weibull distributions
|
|
|
1970
|
9 |
5 |
p. 379-380
2 p.
|
artikel
|
| 24 |
Computers make a big difference in MOS designs
|
|
|
1970
|
9 |
5 |
p. 387-
1 p.
|
artikel
|
| 25 |
Cumulative reference list of published books on microelectronics and reliability
|
|
|
1970
|
9 |
5 |
p. 359-372
14 p.
|
artikel
|
| 26 |
Custom designed integrated circuits
|
|
|
1970
|
9 |
5 |
p. 388-
1 p.
|
artikel
|
| 27 |
Design of a reliable multiple contact for the coin telephone totalizer
|
|
|
1970
|
9 |
5 |
p. 382-
1 p.
|
artikel
|
| 28 |
Determination of the thickness and refractive index of films on silicon using split-beam ellipsometry
|
|
|
1970
|
9 |
5 |
p. 389-
1 p.
|
artikel
|
| 29 |
Determining maximum reliable load lines for power transistors
|
|
|
1970
|
9 |
5 |
p. 382-
1 p.
|
artikel
|
| 30 |
Developments in printed circuits—II. Packaged circuits
|
|
|
1970
|
9 |
5 |
p. 386-
1 p.
|
artikel
|
| 31 |
Die and wire bonding capabilities of thick-film conductors
|
|
|
1970
|
9 |
5 |
p. 394-
1 p.
|
artikel
|
| 32 |
Doping profile measurements on silicon epitaxial layers with field controlled planar diodes
|
|
|
1970
|
9 |
5 |
p. 392-
1 p.
|
artikel
|
| 33 |
Effect of reactor geometry on growth rate of epitaxial silicon
|
|
|
1970
|
9 |
5 |
p. 391-
1 p.
|
artikel
|
| 34 |
Effect of thermal instability on ultra-high frequency performance of insulated-gate field-effect transistors
|
|
|
1970
|
9 |
5 |
p. 389-390
2 p.
|
artikel
|
| 35 |
Electromigration failure modes in aluminum metallization for semiconductor devices
|
|
|
1970
|
9 |
5 |
p. 381-
1 p.
|
artikel
|
| 36 |
Epitaxial growth of silicon films evaporated on sapphire
|
|
|
1970
|
9 |
5 |
p. 387-
1 p.
|
artikel
|
| 37 |
Erratum
|
|
|
1970
|
9 |
5 |
p. 435-436
2 p.
|
artikel
|
| 38 |
Evaluation of D50S aluminium alloy wire-wrapped joints
|
|
|
1970
|
9 |
5 |
p. 381-
1 p.
|
artikel
|
| 39 |
Evaluation of telephone switching systems
|
|
|
1970
|
9 |
5 |
p. 385-
1 p.
|
artikel
|
| 40 |
Expected levels of circuit integration in the early seventies
|
|
|
1970
|
9 |
5 |
p. 386-
1 p.
|
artikel
|
| 41 |
Experience gained from reliability trials on an airborne radar
|
|
|
1970
|
9 |
5 |
p. 385-
1 p.
|
artikel
|
| 42 |
Experiences with an rf sputtering system of non-grounded double electrode configuration
|
|
|
1970
|
9 |
5 |
p. 393-
1 p.
|
artikel
|
| 43 |
Failure creating and removing in solids
|
|
|
1970
|
9 |
5 |
p. 382-
1 p.
|
artikel
|
| 44 |
Growing silicon on spinel adds up to high isolation, fast switching in ICs
|
|
|
1970
|
9 |
5 |
p. 391-
1 p.
|
artikel
|
| 45 |
High reliability resistors for use in submerged cable repeaters
|
|
|
1970
|
9 |
5 |
p. 382-
1 p.
|
artikel
|
| 46 |
High speed scanning electron microscopy at NPL
|
Pugh, D.J.
|
|
1970
|
9 |
5 |
p. 433-
1 p.
|
artikel
|
| 47 |
Improved stability in Al2O3-CdSe thin-film transistors
|
|
|
1970
|
9 |
5 |
p. 392-
1 p.
|
artikel
|
| 48 |
Incorporating photocells in integrated circuits
|
|
|
1970
|
9 |
5 |
p. 388-
1 p.
|
artikel
|
| 49 |
Influence of deposition and processing parameters on the TCR of Ni-Cr-Cu-Al alloy film resistors
|
|
|
1970
|
9 |
5 |
p. 392-
1 p.
|
artikel
|
| 50 |
Instabilites temporelles des transistors MOS—I. Le comportement lineaire
|
|
|
1970
|
9 |
5 |
p. 392-
1 p.
|
artikel
|
| 51 |
Integrated circuits and passive components in entertainment electronics
|
|
|
1970
|
9 |
5 |
p. 389-
1 p.
|
artikel
|
| 52 |
Integrated circuit with 25 transistors for processing FM signals
|
|
|
1970
|
9 |
5 |
p. 389-
1 p.
|
artikel
|
| 53 |
Integrated flip-flop circuits
|
|
|
1970
|
9 |
5 |
p. 389-
1 p.
|
artikel
|
| 54 |
Integrated video pre-amplifier, sync, a.g.c. and noise protection system for monochrome receivers
|
|
|
1970
|
9 |
5 |
p. 389-
1 p.
|
artikel
|
| 55 |
Inter Nepcon—Electrode clamp design the key to depositing thick aluminium films
|
|
|
1970
|
9 |
5 |
p. 393-
1 p.
|
artikel
|
| 56 |
Inter Nepcon—New techniques widen the scope of flexible printed wiring
|
|
|
1970
|
9 |
5 |
p. 387-
1 p.
|
artikel
|
| 57 |
Inter/Nepcon—The metallurgy of soldering microconnections
|
|
|
1970
|
9 |
5 |
p. 388-
1 p.
|
artikel
|
| 58 |
Ion doping of semiconductors
|
|
|
1970
|
9 |
5 |
p. 394-
1 p.
|
artikel
|
| 59 |
Lattice thermal conductivity of semiconductors: A chemical bond approach
|
|
|
1970
|
9 |
5 |
p. 391-
1 p.
|
artikel
|
| 60 |
Limitations to the performance of planar gunn effect devices
|
|
|
1970
|
9 |
5 |
p. 389-
1 p.
|
artikel
|
| 61 |
Lower confidence limits for availability assuming log normally distributed repair times
|
|
|
1970
|
9 |
5 |
p. 383-
1 p.
|
artikel
|
| 62 |
Low-temperature epitaxial growth of doped silicon films and junctions
|
|
|
1970
|
9 |
5 |
p. 390-
1 p.
|
artikel
|
| 63 |
Mains supply for data processing systems
|
|
|
1970
|
9 |
5 |
p. 380-
1 p.
|
artikel
|
| 64 |
Metallization systems for silicon integrated circuits
|
|
|
1970
|
9 |
5 |
p. 391-
1 p.
|
artikel
|
| 65 |
Methods for measuring the distribution of imperfections in semiconductors
|
|
|
1970
|
9 |
5 |
p. 382-
1 p.
|
artikel
|
| 66 |
MOS: A critical review. Problems for the designer
|
|
|
1970
|
9 |
5 |
p. 387-
1 p.
|
artikel
|
| 67 |
Mounting and connection of integrated circuits
|
|
|
1970
|
9 |
5 |
p. 388-
1 p.
|
artikel
|
| 68 |
Multi-emitter ICs stabilize voltages in solid state tuners
|
|
|
1970
|
9 |
5 |
p. 388-389
2 p.
|
artikel
|
| 69 |
New ferrite technology improves integrated circuits for microwaves
|
Edelman, H.C.M.
|
|
1970
|
9 |
5 |
p. 434-
1 p.
|
artikel
|
| 70 |
New techniques in equipment design
|
|
|
1970
|
9 |
5 |
p. 388-
1 p.
|
artikel
|
| 71 |
On failure-time distributions for systems of dissimilar units
|
|
|
1970
|
9 |
5 |
p. 383-
1 p.
|
artikel
|
| 72 |
On the mechanism of h FE degradation by emitter-base reverse current stress
|
Verwey, J.F.
|
|
1970
|
9 |
5 |
p. 425-432
8 p.
|
artikel
|
| 73 |
Papers to be published in future issues
|
|
|
1970
|
9 |
5 |
p. 395-
1 p.
|
artikel
|
| 74 |
Plastic semiconductor devices and integrated circuits for military applications
|
|
|
1970
|
9 |
5 |
p. 386-
1 p.
|
artikel
|
| 75 |
Plastics for long-life microcircuit encapsulation—II. Water absorption and resin to lead adhesion
|
|
|
1970
|
9 |
5 |
p. 386-
1 p.
|
artikel
|
| 76 |
Plastics for long-life microcircuit encapsulation—I. Materials properties and possible failure mechanisms
|
|
|
1970
|
9 |
5 |
p. 386-
1 p.
|
artikel
|
| 77 |
Powder dropper for flash evaporation
|
|
|
1970
|
9 |
5 |
p. 394-
1 p.
|
artikel
|
| 78 |
Quality management for the 1970s
|
|
|
1970
|
9 |
5 |
p. 380-
1 p.
|
artikel
|
| 79 |
Rapid evaluation of metal film resistors
|
|
|
1970
|
9 |
5 |
p. 393-
1 p.
|
artikel
|
| 80 |
Recent United Kingdom patents in microelectronics
|
|
|
1970
|
9 |
5 |
p. 377-378
2 p.
|
artikel
|
| 81 |
Reliability aspects of the ESRO II satellite programme
|
|
|
1970
|
9 |
5 |
p. 384-
1 p.
|
artikel
|
| 82 |
Reliability assurance of Post Office 4A2 type transistors for submarine cable use
|
|
|
1970
|
9 |
5 |
p. 383-
1 p.
|
artikel
|
| 83 |
Reliability improvement through effective non-destructive screening
|
|
|
1970
|
9 |
5 |
p. 381-
1 p.
|
artikel
|
| 84 |
Reliability of marine radar—a case history
|
|
|
1970
|
9 |
5 |
p. 384-
1 p.
|
artikel
|
| 85 |
Reliability prediction under fire
|
|
|
1970
|
9 |
5 |
p. 380-
1 p.
|
artikel
|
| 86 |
RF sputtered strontium titanate films
|
|
|
1970
|
9 |
5 |
p. 393-
1 p.
|
artikel
|
| 87 |
Satellite reliability engineering
|
|
|
1970
|
9 |
5 |
p. 385-
1 p.
|
artikel
|
| 88 |
Self-renewing computers reach for the stars
|
|
|
1970
|
9 |
5 |
p. 383-
1 p.
|
artikel
|
| 89 |
Shallow phosphorus diffusion profiles in silicon
|
|
|
1970
|
9 |
5 |
p. 390-
1 p.
|
artikel
|
| 90 |
Silicon-gate technology
|
|
|
1970
|
9 |
5 |
p. 391-
1 p.
|
artikel
|
| 91 |
Silicon material problems in semiconductor device technology
|
Schwuttke, G.H.
|
|
1970
|
9 |
5 |
p. 397-398
2 p.
|
artikel
|
| 92 |
Silicon nitride as a mask in phosphorus diffusion
|
|
|
1970
|
9 |
5 |
p. 387-
1 p.
|
artikel
|
| 93 |
Some measurements of stress in thin films prepared by low pressure triode sputtering
|
|
|
1970
|
9 |
5 |
p. 393-
1 p.
|
artikel
|
| 94 |
Some problems associated with the attainment of ultra-high vacuum
|
|
|
1970
|
9 |
5 |
p. 394-
1 p.
|
artikel
|
| 95 |
Some reliability characteristics of a stand-by redundant equipment with imperfect switching
|
Prakash, S.
|
|
1970
|
9 |
5 |
p. 419-423
5 p.
|
artikel
|
| 96 |
Specifications for electronic components of assessed quality: BS 9000
|
|
|
1970
|
9 |
5 |
p. 382-
1 p.
|
artikel
|
| 97 |
Stochastic behaviour of a redundant electronic equipment with imperfect switching and opportunistic repairs
|
Prakash, S.
|
|
1970
|
9 |
5 |
p. 413-418
6 p.
|
artikel
|
| 98 |
Study of flip-chip and beam-lead microcircuit assemblies
|
|
|
1970
|
9 |
5 |
p. 387-388
2 p.
|
artikel
|
| 99 |
Study of the neutral vacancy in semiconductors
|
|
|
1970
|
9 |
5 |
p. 390-
1 p.
|
artikel
|
| 100 |
Substrate bombardment in rf sputtering systems
|
|
|
1970
|
9 |
5 |
p. 393-
1 p.
|
artikel
|
| 101 |
Techniques for reliability assessment from field data
|
|
|
1970
|
9 |
5 |
p. 385-
1 p.
|
artikel
|
| 102 |
The anatomy of integrated-circuit technology
|
|
|
1970
|
9 |
5 |
p. 386-
1 p.
|
artikel
|
| 103 |
The application of computer aids in the analysis of fault data generated by a large data handling system
|
|
|
1970
|
9 |
5 |
p. 384-
1 p.
|
artikel
|
| 104 |
The effect of partial failure modes on reliability analysis
|
|
|
1970
|
9 |
5 |
p. 380-
1 p.
|
artikel
|
| 105 |
The implanted profiles of boron, phosphorus and arsenic in silicon from junction depth measurements
|
|
|
1970
|
9 |
5 |
p. 391-392
2 p.
|
artikel
|
| 106 |
The influence of crystal orientation on silicon semiconductor processing
|
|
|
1970
|
9 |
5 |
p. 390-
1 p.
|
artikel
|
| 107 |
The manufacture of highly reliable transistors for submarine cable systems
|
|
|
1970
|
9 |
5 |
p. 382-
1 p.
|
artikel
|
| 108 |
The role of quality assurance in the reliability of electronic computers
|
|
|
1970
|
9 |
5 |
p. 385-
1 p.
|
artikel
|
| 109 |
The silicon-silicon dioxide system
|
|
|
1970
|
9 |
5 |
p. 390-391
2 p.
|
artikel
|
| 110 |
The use of reflow soldered face bonded chips in hybrid ICs—I.
|
|
|
1970
|
9 |
5 |
p. 388-
1 p.
|
artikel
|
| 111 |
The value of reliability prediction
|
|
|
1970
|
9 |
5 |
p. 380-
1 p.
|
artikel
|
| 112 |
Thick and thin films for electronic applications—materials and processes review
|
|
|
1970
|
9 |
5 |
p. 386-
1 p.
|
artikel
|
| 113 |
Thick-film integrated circuits—I
|
|
|
1970
|
9 |
5 |
p. 392-393
2 p.
|
artikel
|
| 114 |
Thick-film integrated circuits—II
|
|
|
1970
|
9 |
5 |
p. 393-
1 p.
|
artikel
|
| 115 |
Thick films or thin?
|
|
|
1970
|
9 |
5 |
p. 393-
1 p.
|
artikel
|
| 116 |
Thin-film dielectric properties of rf sputtered oxides
|
|
|
1970
|
9 |
5 |
p. 393-394
2 p.
|
artikel
|
| 117 |
Void formation failure mechanisms in integrated circuits
|
|
|
1970
|
9 |
5 |
p. 381-
1 p.
|
artikel
|
Tijdschrift beschrijving