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                             103 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 Advanced thermal failure analysis and reliability investigations – Industrial demands and related limitations Altes, Andreas
 2008
 88-90 8-9 p. 1273-1278
6 p.
 artikel
2 A four-point-bending-test for the stability assessment of glass frit bonded molded microsensors Nötzold, K.
 2008
 88-90 8-9 p. 1562-1566
5 p.
 artikel
3 Alpha particle radiation effects in RF MEMS capacitive switches Ruan, J.
 2008
 88-90 8-9 p. 1241-1244
4 p.
 artikel
4 Analysis of traps effect on AlGaN/GaN HEMT by luminescence techniques Bouya, M.
 2008
 88-90 8-9 p. 1366-1369
4 p.
 artikel
5 Analytical model for multi-junction solar cells prediction in space environment Gauffier, A.
 2008
 88-90 8-9 p. 1494-1499
6 p.
 artikel
6 An analytical model for hot carrier degradation in nanoscale CMOS suitable for the simulation of degradation in analog IC applications Maricau, E.
 2008
 88-90 8-9 p. 1576-1580
5 p.
 artikel
7 Automotive IC reliability: Elements of the battle towards zero defects Kuper, Fred G.
 2008
 88-90 8-9 p. 1459-1463
5 p.
 artikel
8 Ball grid array (BGA) solder joint intermittency real-time detection Roth, N.
 2008
 88-90 8-9 p. 1155-1160
6 p.
 artikel
9 Behaviour of 1.2kV SiC JBS diodes under repetitive high power stress Banu, V.
 2008
 88-90 8-9 p. 1444-1448
5 p.
 artikel
10 Bridging the business model gap between the semiconductor industry and the automotive industry with respect to quality and reliability de Jong, M.
 2008
 88-90 8-9 p. 1112-1113
2 p.
 artikel
11 Charging and discharging phenomena in electrostatically-driven single-crystal-silicon MEM resonators: DC bias dependence and influence on the series resonance frequency Kalicinski, Stanislaw
 2008
 88-90 8-9 p. 1221-1226
6 p.
 artikel
12 Compact modeling of the non-linear post-breakdown current in thin gate oxides using the generalized diode equation Miranda, E.
 2008
 88-90 8-9 p. 1604-1607
4 p.
 artikel
13 Comparison between changes of ultracapacitors model parameters during calendar life and power cycling ageing tests El Brouji, H.
 2008
 88-90 8-9 p. 1473-1478
6 p.
 artikel
14 Comparison of laser voltage probing and mapping results in oversized and minimum size devices of 120nm and 65nm technology Kindereit, Ulrike
 2008
 88-90 8-9 p. 1322-1326
5 p.
 artikel
15 Conditional time resolved photoemission for debugging ICs with intermittent faults Zachariasse, Frank
 2008
 88-90 8-9 p. 1289-1294
6 p.
 artikel
16 Cu/low-k dielectric TDDB reliability issues for advanced CMOS technologies Chen, F.
 2008
 88-90 8-9 p. 1375-1383
9 p.
 artikel
17 Defect analysis concerning variation in characteristics of PIN diode for Hybrid Vehicles Goto, Yasunori
 2008
 88-90 8-9 p. 1485-1489
5 p.
 artikel
18 Degradation behavior of Ta2O5 stacks and its dependence on the gate electrode Atanassova, E.
 2008
 88-90 8-9 p. 1193-1197
5 p.
 artikel
19 3D electro-thermal investigations for reliability of ultra low ON state resistance power MOSFET Sauveplane, J.B.
 2008
 88-90 8-9 p. 1464-1467
4 p.
 artikel
20 Detectability of dynamic photon emission in static Si CCD for signal path determination in integrated circuits Laskowski, Piotr
 2008
 88-90 8-9 p. 1295-1299
5 p.
 artikel
21 Detection of failure sites by focused ion beam and nano-probing in the interconnect of three-dimensional stacked circuit structures Yang, Yu
 2008
 88-90 8-9 p. 1517-1520
4 p.
 artikel
22 Detection of localized UIS failure on IGBTs with the aid of lock-in thermography Breglio, G.
 2008
 88-90 8-9 p. 1432-1434
3 p.
 artikel
23 Determination of migration effects in Cu-via structures with respect to process-induced stress Weide-Zaage, Kirsten
 2008
 88-90 8-9 p. 1393-1397
5 p.
 artikel
24 Determination of temperature change inside IC packages during laser ablation of molding compound Schwindenhammer, P.
 2008
 88-90 8-9 p. 1263-1267
5 p.
 artikel
25 Dynamic stress method for accurate NVM oxide robustness evaluation for automotive applications Pic, D.
 2008
 88-90 8-9 p. 1318-1321
4 p.
 artikel
26 Editorial Groeseneken, Guido
 2008
 88-90 8-9 p. 1111-
1 p.
 artikel
27 Effect of physical defect on shmoos in CMOS DSM technologies Machouat, A.
 2008
 88-90 8-9 p. 1333-1338
6 p.
 artikel
28 Electrical characterization and reliability study of HEMTs on composite substrates under high electric fields Tazzoli, A.
 2008
 88-90 8-9 p. 1370-1374
5 p.
 artikel
29 ESD failure signature in capacitive RF MEMS switches Ruan, J.
 2008
 88-90 8-9 p. 1237-1240
4 p.
 artikel
30 ESD issues in advanced CMOS bulk and FinFET technologies: Processing, protection devices and circuit strategies Russ, Christian
 2008
 88-90 8-9 p. 1403-1411
9 p.
 artikel
31 ESD sensitivity investigation on a wide range of high density embedded capacitors Barbier, Frederic
 2008
 88-90 8-9 p. 1422-1426
5 p.
 artikel
32 Experimental evidence of “latent gate oxide damages” in medium voltage power MOSFET as a result of heavy ions exposure Busatto, G.
 2008
 88-90 8-9 p. 1306-1309
4 p.
 artikel
33 Failure Analysis enhancement by evaluating the Photoelectric Laser Stimulation impact on mixed-mode ICs Sienkiewicz, M.
 2008
 88-90 8-9 p. 1529-1532
4 p.
 artikel
34 Failure analysis of a thin-film nitride MEMS package Li, Q.
 2008
 88-90 8-9 p. 1557-1561
5 p.
 artikel
35 Fast and rigorous use of thermal time constant to characterize back end of the line test structure in advanced technology Reverdy, A.
 2008
 88-90 8-9 p. 1279-1284
6 p.
 artikel
36 Fast electromigration wafer mapping for wafer fab process monitoring and improvement Li, Yuan
 2008
 88-90 8-9 p. 1388-1392
5 p.
 artikel
37 Fracture morphology and mechanism of IMC in Low-Ag SAC Solder/UBM (Ni(P)-Au) for WLCSP Sun, F.
 2008
 88-90 8-9 p. 1167-1170
4 p.
 artikel
38 Generic simulator for faulty IC Ferrigno, Julie
 2008
 88-90 8-9 p. 1592-1596
5 p.
 artikel
39 High performance, FPGA-based test apparatus for unclamped inductive switching of IGBTs Iannuzzo, F.
 2008
 88-90 8-9 p. 1449-1452
4 p.
 artikel
40 Hot spot analysis during thermal shutdown of SOI BCDMOS half bridge driver for automotive applications Heer, M.
 2008
 88-90 8-9 p. 1525-1528
4 p.
 artikel
41 IGBT module failure analysis in railway applications Perpiñà, X.
 2008
 88-90 8-9 p. 1427-1431
5 p.
 artikel
42 IGBT modules robustness during turn-off commutation Busatto, G.
 2008
 88-90 8-9 p. 1435-1439
5 p.
 artikel
43 Impact of inside spacer process on fully self-aligned 250GHz SiGe:C HBTs reliability performances: a-Si vs. nitride Diop, M.
 2008
 88-90 8-9 p. 1198-1201
4 p.
 artikel
44 Impact of silicon nitride CESL on NLDEMOS transistor reliability Beylier, G.
 2008
 88-90 8-9 p. 1539-1543
5 p.
 artikel
45 Influence of the organic pollution on the reliability of HE9 connectors Crétinon, L.
 2008
 88-90 8-9 p. 1129-1132
4 p.
 artikel
46 InGaP/GaAs heterojunction bipolar transistor and RF power amplifier reliability Liu, Xiang
 2008
 88-90 8-9 p. 1212-1215
4 p.
 artikel
47 Inside front cover - Editorial board 2008
 88-90 8-9 p. IFC-
1 p.
 artikel
48 Insights on trap generation and breakdown in ultra thin SiO2 and SiON dielectrics from low voltage stress-induced leakage current measurements Nicollian, Paul E.
 2008
 88-90 8-9 p. 1171-1177
7 p.
 artikel
49 Intermittent-contact scanning capacitance microscopy versus contact mode SCM applied to 2D dopant profiling Biberger, Roland
 2008
 88-90 8-9 p. 1339-1342
4 p.
 artikel
50 Kelvin probe microscopy for reliability investigation of RF-MEMS capacitive switches Belarni, A.
 2008
 88-90 8-9 p. 1232-1236
5 p.
 artikel
51 Laser decapsulation of plastic packages for failure analysis: Process control and artefact investigations Aubert, A.
 2008
 88-90 8-9 p. 1144-1148
5 p.
 artikel
52 Layout analysis as supporting tool for failure localization: Basic principles and case studies Hartmann, C.
 2008
 88-90 8-9 p. 1343-1348
6 p.
 artikel
53 Lifetime analysis of solder joints in high power IGBT modules for increasing the reliability for operation at 150°C Feller, L.
 2008
 88-90 8-9 p. 1161-1166
6 p.
 artikel
54 Low-cost preparation method for exposing IC surfaces in stacked die packages by micro-abrasive blasting Martens, S.
 2008
 88-90 8-9 p. 1513-1516
4 p.
 artikel
55 MIMC reliability and electrical behavior defined by a physical layer property of the dielectric Ackaert, J.
 2008
 88-90 8-9 p. 1553-1556
4 p.
 artikel
56 Nanometer-scale leakage measurements in high vacuum on de-processed high-k capacitors Polspoel, W.
 2008
 88-90 8-9 p. 1521-1524
4 p.
 artikel
57 NBTI on smart power technologies: A detailed analysis of two concurrent effects using a re-examined on-the-fly technique Aresu, S.
 2008
 88-90 8-9 p. 1310-1312
3 p.
 artikel
58 Near-field detection of photon emission from silicon with 30nm spatial resolution Isakov, D.
 2008
 88-90 8-9 p. 1285-1288
4 p.
 artikel
59 Negative bias temperature instability in n-channel power VDMOSFETs Danković, D.
 2008
 88-90 8-9 p. 1313-1317
5 p.
 artikel
60 New aspects for lifetime prediction of bipolar transistors in automotive power wafer technologies by using a power law fitting procedure Goroll, Michael
 2008
 88-90 8-9 p. 1509-1512
4 p.
 artikel
61 Non-linear width scaling of ESD protection devices and link with p-well implant in BCD-processes Olthof, E.H.T.
 2008
 88-90 8-9 p. 1417-1421
5 p.
 artikel
62 Novel simulation approach for transient analysis and reliable thermal management of power devices Castellazzi, A.
 2008
 88-90 8-9 p. 1500-1504
5 p.
 artikel
63 On chip–package stress interaction van Driel, W.D.
 2008
 88-90 8-9 p. 1268-1272
5 p.
 artikel
64 On the temperature dependence of NBTI recovery Aichinger, T.
 2008
 88-90 8-9 p. 1178-1184
7 p.
 artikel
65 Optimization of gate poly TAB size and reliability on short channel pMOSFET Seok, Jung-Eun
 2008
 88-90 8-9 p. 1185-1188
4 p.
 artikel
66 Packaging influences on the reliability of MEMS resonators Zaal, J.J.M.
 2008
 88-90 8-9 p. 1567-1571
5 p.
 artikel
67 Performance and reliability testing of modern IGBT devices under typical operating conditions of aeronautic applications Fock-Sui-Too, J.L.
 2008
 88-90 8-9 p. 1453-1458
6 p.
 artikel
68 PLL soft functional failure analysis in advanced logic product using fault based analogue simulation and soft defect localization Gao, Liming
 2008
 88-90 8-9 p. 1349-1353
5 p.
 artikel
69 PMOS breakdown effects on digital circuits – Modeling and analysis Kuang, Weidong
 2008
 88-90 8-9 p. 1597-1600
4 p.
 artikel
70 Reduction of test effort. Looking for more acceleration for reliable components for automotive applications Pufall, R.
 2008
 88-90 8-9 p. 1490-1493
4 p.
 artikel
71 Relevant metrics for evaluation of concurrent error detection schemes de Vasconcelos, Maí C.R.
 2008
 88-90 8-9 p. 1601-1603
3 p.
 artikel
72 Reliability and defectivity comparison of n- and p-channel SLS ELA polysilicon TFTs fabricated with a novel crystallization technique Moschou, D.C.
 2008
 88-90 8-9 p. 1544-1548
5 p.
 artikel
73 Reliability and failure in single crystal silicon MEMS devices Neels, A.
 2008
 88-90 8-9 p. 1245-1247
3 p.
 artikel
74 Reliability- and process-variation aware design of integrated circuits Alam, M.
 2008
 88-90 8-9 p. 1114-1122
9 p.
 artikel
75 Reliability aspects of a radiation detector fabricated by post-processing a standard CMOS chip Salm, Cora
 2008
 88-90 8-9 p. 1139-1143
5 p.
 artikel
76 Reliability assessment of integrated power transistors: Lateral DMOS versus vertical DMOS Moens, P.
 2008
 88-90 8-9 p. 1300-1305
6 p.
 artikel
77 Reliability improvement of InGaN LED backlight module by accelerated life test (ALT) and screen policy of potential leakage LED Jeong, Jae-Seong
 2008
 88-90 8-9 p. 1216-1220
5 p.
 artikel
78 Reliability investigations of 850nm silicon photodiodes under proton irradiation for space applications Bourqui, M.L.
 2008
 88-90 8-9 p. 1202-1207
6 p.
 artikel
79 Reliability issues of e-Cubes heterogeneous system integration Janczyk, Grzegorz
 2008
 88-90 8-9 p. 1133-1138
6 p.
 artikel
80 Reliability study of TaON capacitors: From leakage current characterization to ESD robustness prediction Verchiani, M.
 2008
 88-90 8-9 p. 1412-1416
5 p.
 artikel
81 RF CMOS reliability simulations Sasse, Guido T.
 2008
 88-90 8-9 p. 1581-1585
5 p.
 artikel
82 Selective activation of failure mechanisms in packaged double-heterostructure light emitting diodes using controlled neutron energy irradiation Deshayes, Y.
 2008
 88-90 8-9 p. 1354-1360
7 p.
 artikel
83 Signal probability for reliability evaluation of logic circuits Franco, Denis Teixeira
 2008
 88-90 8-9 p. 1586-1591
6 p.
 artikel
84 Silicon based system in package: Improvement of passive integration process to avoid TBMS failure Gautier, Christian
 2008
 88-90 8-9 p. 1258-1262
5 p.
 artikel
85 Simulation of migration effects in nanoscaled copper metallizations Weide-Zaage, Kirsten
 2008
 88-90 8-9 p. 1398-1402
5 p.
 artikel
86 Solder joint and trace line failure simulation and experimental validation of fan-out type wafer level packaging subjected to drop impact Chou, Chan-Yen
 2008
 88-90 8-9 p. 1149-1154
6 p.
 artikel
87 Statistical aspects of reliability in bulk MOSFETs with multiple defect states and random discrete dopants Bukhori, Muhammad Faiz
 2008
 88-90 8-9 p. 1549-1552
4 p.
 artikel
88 Statistical simulation of random dopant induced threshold voltage fluctuations for 35nm channel length MOSFET Kovac, Urban
 2008
 88-90 8-9 p. 1572-1575
4 p.
 artikel
89 Study of copper drift during TDDB of intermetal dielectrics by using fully passivated MOS capacitors as test vehicle Croes, K.
 2008
 88-90 8-9 p. 1384-1387
4 p.
 artikel
90 Sulfur-contamination of high power white LED Mura, G.
 2008
 88-90 8-9 p. 1208-1211
4 p.
 artikel
91 Surface ESD (ESDFOS) in assembly fab machineries as a functional and reliability risk – Failure analysis, tool diagnosis and on-site-remedies Jacob, Peter
 2008
 88-90 8-9 p. 1608-1612
5 p.
 artikel
92 Systems-in-foil – Devices, fabrication processes and reliability issues van den Brand, J.
 2008
 88-90 8-9 p. 1123-1128
6 p.
 artikel
93 Temperature stability of a piezoresistive MEMS resonator including self-heating Bendida, S.
 2008
 88-90 8-9 p. 1227-1231
5 p.
 artikel
94 Testing semiconductor devices at extremely high operating temperatures Borthen, Peter
 2008
 88-90 8-9 p. 1440-1443
4 p.
 artikel
95 Thermal heating within SOI Koning, J.J.
 2008
 88-90 8-9 p. 1505-1508
4 p.
 artikel
96 Thermal modeling of high frequency DC–DC switching modules: Electromagnetic and thermal simulation of magnetic components Cova, P.
 2008
 88-90 8-9 p. 1468-1472
5 p.
 artikel
97 Thermal resistance assessment in multi-trenched power devices Roig, J.
 2008
 88-90 8-9 p. 1479-1484
6 p.
 artikel
98 Thermal storage effects on AlGaN/GaN HEMT Danesin, Francesca
 2008
 88-90 8-9 p. 1361-1365
5 p.
 artikel
99 Timing analysis of scan design integrated circuits using stimulation by an infrared diode laser in externally triggered pulsing condition Kiyan, Tuba
 2008
 88-90 8-9 p. 1327-1332
6 p.
 artikel
100 Unusual defects, generated by wafer sawing: Diagnosis, mechanisms and how to distinguish from related failures Jacob, Peter
 2008
 88-90 8-9 p. 1253-1257
5 p.
 artikel
101 Voltage acceleration of time dependent breakdown of ultra-thin NO and NON dielectrics Hofmann, Peter
 2008
 88-90 8-9 p. 1189-1192
4 p.
 artikel
102 Voltage and temperature effect on dielectric charging for RF-MEMS capacitive switches reliability investigation Lamhamdi, M.
 2008
 88-90 8-9 p. 1248-1252
5 p.
 artikel
103 Voltage-based fault path tracing by transistor operating point analysis Sanada, Masaru
 2008
 88-90 8-9 p. 1533-1538
6 p.
 artikel
                             103 gevonden resultaten
 
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