| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
AC effects in IC reliability
|
Hu, Chenming
|
|
1996
|
76-77 |
11-12 |
p. 1611-1617
|
artikel
|
| 2 |
A comparison of focused ion beam and electron beam induced deposition processes
|
Lipp, S.
|
|
1996
|
76-77 |
11-12 |
p. 1779-1782
|
artikel
|
| 3 |
A comparison of MOSFETs aging under d.c., a.c. and alternating stress conditions
|
Revil, Nathalie
|
|
1993
|
76-77 |
11-12 |
p. 1909-1919
11 p.
|
artikel
|
| 4 |
A current self-limited protective device studied by LF-noise measurements
|
Modjtahedi, A.
|
|
1996
|
76-77 |
11-12 |
p. 1759-1762
|
artikel
|
| 5 |
A fast mechanical test technique for life time estimation of micro-joints
|
Khatibi, G.
|
|
2008
|
76-77 |
11-12 |
p. 1822-1830
9 p.
|
artikel
|
| 6 |
A low power MEMS gas sensor based on nanocrystalline ZnO thin films for sensing methane
|
Bhattacharyya, P.
|
|
2008
|
76-77 |
11-12 |
p. 1772-1779
8 p.
|
artikel
|
| 7 |
Analysis of the surface base current drift in GaAs HBT's
|
Maneux, C.
|
|
1996
|
76-77 |
11-12 |
p. 1903-1906
|
artikel
|
| 8 |
An automated approach for locating multiple faulty LUTs in an FPGA
|
Nandha Kumar, T.
|
|
2008
|
76-77 |
11-12 |
p. 1900-1906
7 p.
|
artikel
|
| 9 |
A new analytic model for the description of the intrinsic oxide breakdown statistics of ultra-thin oxides
|
Degraeve, R.
|
|
1996
|
76-77 |
11-12 |
p. 1639-1642
|
artikel
|
| 10 |
A new method to determine the influence of thermomechanical stress on the reliability of metal lines in integrated circuits
|
Glasow, A.v.
|
|
1996
|
76-77 |
11-12 |
p. 1755-1758
|
artikel
|
| 11 |
A new physics-based model for time-dependent Dielectric breakdown
|
Schlund, B.J.
|
|
1996
|
76-77 |
11-12 |
p. 1655-1658
|
artikel
|
| 12 |
A new statistical model for fitting bimodal oxide breakdown distributions at different field conditions
|
Degraeve, R.
|
|
1996
|
76-77 |
11-12 |
p. 1651-1654
|
artikel
|
| 13 |
A new technique to characterize the early stages of electromigration-induced resistance changes at low current densities
|
D'Haeger, V.
|
|
1996
|
76-77 |
11-12 |
p. 1695-1698
|
artikel
|
| 14 |
A new wafer level reliability method for evaluation of ionic induced pmosfet drift effects
|
Dreizner, A.
|
|
1996
|
76-77 |
11-12 |
p. 1855-1858
|
artikel
|
| 15 |
An investigation of hot carrier effects in submicron CMOS integrated circuits
|
Fang, Peng
|
|
1993
|
76-77 |
11-12 |
p. 1713-1727
15 p.
|
artikel
|
| 16 |
A novel approach to characterization of progressive breakdown in high-k/metal gate stacks
|
Pagano, R.
|
|
2008
|
76-77 |
11-12 |
p. 1759-1764
6 p.
|
artikel
|
| 17 |
Application of the atomic force microscope to integrated circuit failure analysis
|
Rodgers, Mark R.
|
|
1993
|
76-77 |
11-12 |
p. 1947-1956
10 p.
|
artikel
|
| 18 |
A practical system for hot spot detection using fluorescent microthermal imaging
|
Glacet, J.-Y.
|
|
1996
|
76-77 |
11-12 |
p. 1811-1814
|
artikel
|
| 19 |
A review of board level solder joints for mobile applications
|
Wong, E.H.
|
|
2008
|
76-77 |
11-12 |
p. 1747-1758
12 p.
|
artikel
|
| 20 |
Assessment of oxide charge density and centroid from Fowler-Nordheim derivative characteristics in MOS structures after uniform gate stress
|
Kies, R.
|
|
1996
|
76-77 |
11-12 |
p. 1619-1622
|
artikel
|
| 21 |
Automotive and aerospace electronic systems. Dependability requirements
|
Rose, P.D.
|
|
1996
|
76-77 |
11-12 |
p. 1923-1929
|
artikel
|
| 22 |
A wafer level reliability method for short-loop processing
|
Duluc, J.B.
|
|
1996
|
76-77 |
11-12 |
p. 1859-1862
|
artikel
|
| 23 |
Calendar
|
|
|
2008
|
76-77 |
11-12 |
p. I-II
nvt p.
|
artikel
|
| 24 |
Characterisation of chip-on-board and flip chip packaging technologies by acoustic microscopy
|
Lawton, W.
|
|
1996
|
76-77 |
11-12 |
p. 1803-1806
|
artikel
|
| 25 |
Characterisation of electromigration damage by multiple electrical measurements
|
Jones, B.K.
|
|
1993
|
76-77 |
11-12 |
p. 1829-1840
12 p.
|
artikel
|
| 26 |
Characterisation of reliability of compound semiconductor devices using electrical pulses
|
Brandt, M.
|
|
1996
|
76-77 |
11-12 |
p. 1891-1894
|
artikel
|
| 27 |
Comprehensive gate-oxide reliability evaluation for dram processes
|
Vollertsen, R.-P.
|
|
1996
|
76-77 |
11-12 |
p. 1631-1638
|
artikel
|
| 28 |
Comprehensive physical modeling of nmosfet hot-carrier-induced degradation
|
Lunenborg, M.M.
|
|
1996
|
76-77 |
11-12 |
p. 1667-1670
|
artikel
|
| 29 |
Consideration of temperature and current stress testing on flip chip solder interconnects
|
Yeo, Alfred
|
|
2008
|
76-77 |
11-12 |
p. 1847-1856
10 p.
|
artikel
|
| 30 |
Copper interconnection lines: SARF characterization and lifetime test
|
Ciofi, C.
|
|
1996
|
76-77 |
11-12 |
p. 1747-1750
|
artikel
|
| 31 |
DC, LF dispersion and hf characterisation of short time stressed inp based LM-HEMTS
|
Schreurs, D.
|
|
1996
|
76-77 |
11-12 |
p. 1911-1914
|
artikel
|
| 32 |
Designing circuits and processes to optimize performance and reliability: Metallurgy meets tcad
|
Thompson, C.V.
|
|
1996
|
76-77 |
11-12 |
p. 1683-1690
|
artikel
|
| 33 |
Design of a test structure to evaluate electro-thermomigration in power ICs
|
De Munari, I.
|
|
1996
|
76-77 |
11-12 |
p. 1875-1878
|
artikel
|
| 34 |
Dielectric integrity of thin thermal oxides on silicon
|
Brożek, Tomasz
|
|
1993
|
76-77 |
11-12 |
p. 1637-1656
20 p.
|
artikel
|
| 35 |
Diffusion barrier performance of Zr–N/Zr bilayered film in Cu/Si contact system
|
Wang, Ying
|
|
2008
|
76-77 |
11-12 |
p. 1800-1803
4 p.
|
artikel
|
| 36 |
Drain current dlts analysis of recoverable and permanent degradation effects in AlGaAs/GaAs AND AlGaAs/InGaAs HEMT'S
|
Meneghesso, G.
|
|
1996
|
76-77 |
11-12 |
p. 1895-1898
|
artikel
|
| 37 |
Dynamic effects in hot-carrier degradation relevant for CMOS operation
|
Weber, W.
|
|
1993
|
76-77 |
11-12 |
p. 1729-1736
8 p.
|
artikel
|
| 38 |
Editorial
|
Stojadinović, N.D.
|
|
1993
|
76-77 |
11-12 |
p. 1635-1636
2 p.
|
artikel
|
| 39 |
Effect of high-speed loading conditions on the fracture mode of the BGA solder joint
|
Kim, Jong-Woong
|
|
2008
|
76-77 |
11-12 |
p. 1882-1889
8 p.
|
artikel
|
| 40 |
Effect of the pre-gate oxide cleaning temperature on the reliability of GOI and devices performances in deep submicron CMOS technology
|
Chiang, Y.T.
|
|
2008
|
76-77 |
11-12 |
p. 1786-1790
5 p.
|
artikel
|
| 41 |
Effects of aluminum incorporation on hafnium oxide film using plasma immersion ion implantation
|
Sen, Banani
|
|
2008
|
76-77 |
11-12 |
p. 1765-1768
4 p.
|
artikel
|
| 42 |
Effects of isothermal aging and temperature–humidity treatment of substrate on joint reliability of Sn–3.0Ag–0.5Cu/OSP-finished Cu CSP solder joint
|
Yoon, Jeong-Won
|
|
2008
|
76-77 |
11-12 |
p. 1864-1874
11 p.
|
artikel
|
| 43 |
Effects of metallization lay-out on turn-off failure of modern power bipolar transistors
|
Busatto, G.
|
|
1996
|
76-77 |
11-12 |
p. 1867-1870
|
artikel
|
| 44 |
Efficient output ESD protection for 0.5-μm high-speed CMOS SRAM IC with well-coupled technique
|
Ker, Ming-Dou
|
|
1996
|
76-77 |
11-12 |
p. 1731-1734
|
artikel
|
| 45 |
Electrical characteristics of MOSFETs with La2O3/Y2O3 gate stack
|
Ahmet, Parhat
|
|
2008
|
76-77 |
11-12 |
p. 1769-1771
3 p.
|
artikel
|
| 46 |
Electric field dependence of TDDB activation energy in ultrathin oxides
|
Vincent, E.
|
|
1996
|
76-77 |
11-12 |
p. 1643-1646
|
artikel
|
| 47 |
Electromigration in thin-films for microelectronics
|
Baldini, G.L.
|
|
1993
|
76-77 |
11-12 |
p. 1779-1805
27 p.
|
artikel
|
| 48 |
Enhancement of t bd of mos gate oxides with a single-step pre-stress prior to a CVS in the Fowler-Nordheim regime
|
Martini, A.
|
|
1996
|
76-77 |
11-12 |
p. 1647-1650
|
artikel
|
| 49 |
ESD protection to overcome internal gate-oxide damage on digital-analog interface of mixed-mode CMOS IC's
|
Ker, Ming-Dou
|
|
1996
|
76-77 |
11-12 |
p. 1727-1730
|
artikel
|
| 50 |
Evaluation of structural degradation in packaged semiconductor components using a transient thermal characterisation technique
|
Christiaens, F.
|
|
1996
|
76-77 |
11-12 |
p. 1807-1810
|
artikel
|
| 51 |
Examination of reflow resistance for copper frame smd products
|
Setoya, T.
|
|
1996
|
76-77 |
11-12 |
p. 1799-1802
|
artikel
|
| 52 |
Experimental validation of mechanical stress models by micro-Raman spectroscopy
|
De Wolf, I.
|
|
1996
|
76-77 |
11-12 |
p. 1751-1754
|
artikel
|
| 53 |
Finite element investigations of mechanical stress in metallization structures
|
Weide, K.
|
|
1996
|
76-77 |
11-12 |
p. 1703-1706
|
artikel
|
| 54 |
Finite element model verification for packaged printed circuit board by experimental modal analysis
|
Lee, Ying-Chih
|
|
2008
|
76-77 |
11-12 |
p. 1837-1846
10 p.
|
artikel
|
| 55 |
Hot-carrier effects in scaled MOS devices
|
Takeda, Eiji
|
|
1993
|
76-77 |
11-12 |
p. 1687-1711
25 p.
|
artikel
|
| 56 |
Hot-carrier effects on leakage currents in MOSFETs—Modelling and experiment
|
Oualid, J.
|
|
1993
|
76-77 |
11-12 |
p. 1759-1777
19 p.
|
artikel
|
| 57 |
Hot-carrier reliability of N- and P-channel mosfets with polysilicon and CVD tungsten-polycide gate
|
Lou, C.L.
|
|
1996
|
76-77 |
11-12 |
p. 1663-1666
|
artikel
|
| 58 |
Implications of a localised defect model for wafer level reliability measurements of thin dielectrics
|
O'Sullivan, Paula
|
|
1993
|
76-77 |
11-12 |
p. 1679-1685
7 p.
|
artikel
|
| 59 |
Improved critical area prediction by application of pattern recognition techniques
|
Mattick, J.H.N.
|
|
1996
|
76-77 |
11-12 |
p. 1815-1818
|
artikel
|
| 60 |
Improved sensing characteristics of MISiC Schottky-diode hydrogen sensor by using HfO2 as gate insulator
|
Tang, W.M.
|
|
2008
|
76-77 |
11-12 |
p. 1780-1785
6 p.
|
artikel
|
| 61 |
Improved upper contacts PMMA on P3HT PTFTS using photolithographic processes
|
Mejia, I.
|
|
2008
|
76-77 |
11-12 |
p. 1795-1799
5 p.
|
artikel
|
| 62 |
Influence of parasitic structures on the ESD performance of a pure bipolar process
|
Nikolaïdis, T.
|
|
1996
|
76-77 |
11-12 |
p. 1723-1726
|
artikel
|
| 63 |
Influence of series resistance in oxide parameter extraction data from accelerated tests
|
Pio, F.
|
|
1993
|
76-77 |
11-12 |
p. 1657-1663
7 p.
|
artikel
|
| 64 |
Influence of the ferroelectric domain structure and switching properties on the endurance of PZT ferroelectric capacitors
|
Wouters, D.J.
|
|
1996
|
76-77 |
11-12 |
p. 1763-1766
|
artikel
|
| 65 |
Influence of underfill materials on the reliability of coreless flip chip package
|
Chuang, Chun-Chih
|
|
2008
|
76-77 |
11-12 |
p. 1875-1881
7 p.
|
artikel
|
| 66 |
Inside front cover - Editorial board
|
|
|
2008
|
76-77 |
11-12 |
p. IFC-
1 p.
|
artikel
|
| 67 |
In-situ monitoring of dry corrosion degradation of au ball bonds to al bond pads in plastic packages during HTSL
|
Ragay, F.W.
|
|
1996
|
76-77 |
11-12 |
p. 1931-1934
|
artikel
|
| 68 |
Introduction of plastic encapsulated devices in systems operating under severe temperature conditions
|
Hernandez, R
|
|
1996
|
76-77 |
11-12 |
p. 1943-1946
|
artikel
|
| 69 |
Investigation of charge trapping/de-trapping induced operation lifetime degradation in triple SuperFlash® memory cell
|
Cao, Zigui
|
|
2008
|
76-77 |
11-12 |
p. 1809-1814
6 p.
|
artikel
|
| 70 |
Investigation of trapped charge in oxides under Fowler-Nordheim stress using low bias conditions
|
Duane, R.
|
|
1996
|
76-77 |
11-12 |
p. 1623-1626
|
artikel
|
| 71 |
Justifications for reducing HBM and MM ESD qualification test time
|
Verhaege, K.
|
|
1996
|
76-77 |
11-12 |
p. 1715-1718
|
artikel
|
| 72 |
Measurement and modeling of a new width dependence of nmosfet degradation
|
Schuler, F.
|
|
1996
|
76-77 |
11-12 |
p. 1675-1678
|
artikel
|
| 73 |
Mechanical reliability of Sn-rich Au–Sn/Ni flip chip solder joints fabricated by sequential electroplating method
|
Yoon, Jeong-Won
|
|
2008
|
76-77 |
11-12 |
p. 1857-1863
7 p.
|
artikel
|
| 74 |
Method for precise determination of the statistical distribution of the input offset voltage of differential stages
|
Thewes, R.
|
|
1996
|
76-77 |
11-12 |
p. 1823-1826
|
artikel
|
| 75 |
Microdac — A novel approach to measure in situ deformation fields of microscopic scale
|
Vogel, D.
|
|
1996
|
76-77 |
11-12 |
p. 1939-1942
|
artikel
|
| 76 |
Model for life prediction of fatigue–creep interaction
|
Valentín, R.
|
|
2008
|
76-77 |
11-12 |
p. 1831-1836
6 p.
|
artikel
|
| 77 |
Nanoscopic evaluation of semiconductor properties by scanning probe microscopies
|
Balk, L.J.
|
|
1996
|
76-77 |
11-12 |
p. 1767-1774
|
artikel
|
| 78 |
New experimental findings on hot carrier effects in deep submicrometer surface channel PMOS
|
Park, Jong Tae
|
|
1996
|
76-77 |
11-12 |
p. 1659-1662
|
artikel
|
| 79 |
On the applicability of MIL-Spec-based helium fine leak test to packages with sub-micro liter cavity volumes
|
Goswami, Arindam
|
|
2008
|
76-77 |
11-12 |
p. 1815-1821
7 p.
|
artikel
|
| 80 |
On the status of wafer-level metal integrity testing
|
Dion, Michael J.
|
|
1993
|
76-77 |
11-12 |
p. 1807-1827
21 p.
|
artikel
|
| 81 |
Oxide breakdown decrease by oxide growth projection of implantation-caused stacking faults — A characterization case study using atomic force microscopy
|
Jacob, P.
|
|
1996
|
76-77 |
11-12 |
p. 1783-1786
|
artikel
|
| 82 |
Preface
|
Groeseneken, G.
|
|
1996
|
76-77 |
11-12 |
p. vii-ix
|
artikel
|
| 83 |
Pulsed stress reliability investigations of schottky diodes and HBTS
|
Schüβler, M.
|
|
1996
|
76-77 |
11-12 |
p. 1907-1910
|
artikel
|
| 84 |
Pulsed thermal characterization of a reverse biased pn-junction for ESD HBM simulation
|
Wolf, H.
|
|
1996
|
76-77 |
11-12 |
p. 1711-1714
|
artikel
|
| 85 |
Quality and reliability improvement through defect oriented failure analysis
|
de Pauw, P.
|
|
1996
|
76-77 |
11-12 |
p. 1835-1838
|
artikel
|
| 86 |
Question marks to the extrapolation to lower temperatures in high temperature storage life (HTSL) testing in plastic encapsulated IC'S
|
Schuddeboom, W.
|
|
1996
|
76-77 |
11-12 |
p. 1935-1938
|
artikel
|
| 87 |
Relation between yield and reliability of integrated circuits and application to failure rate assessment and reduction in the one digit FIT and PPM reliability ERA
|
Van Der Pol, Jacob A.
|
|
1996
|
76-77 |
11-12 |
p. 1603-1610
|
artikel
|
| 88 |
Relationship between profile of stressgenerated interface traps and degradation of submicron LDD mosfet's
|
Okhonin, S.
|
|
1996
|
76-77 |
11-12 |
p. 1671-1674
|
artikel
|
| 89 |
Reliability and degradation behaviors of semi-insulating Fe-doped InP buried heterostructure lasers fabricated by movpe and dry etching technique
|
Mawatari, Hiroyasu
|
|
1996
|
76-77 |
11-12 |
p. 1915-1918
|
artikel
|
| 90 |
Reliability improvement of single-poly quasi self-aligned bicmos bjts using base surface arsenic compensation
|
Vendrame, L.
|
|
1996
|
76-77 |
11-12 |
p. 1827-1830
|
artikel
|
| 91 |
Reliability indicators for lift-off of bond wires in IGBT power-modules
|
Farokhzad, B.
|
|
1996
|
76-77 |
11-12 |
p. 1863-1866
|
artikel
|
| 92 |
Reliability issues in submicron MOSFETs with oxynitride gate dielectrics
|
Joshi, Aniruddha B.
|
|
1993
|
76-77 |
11-12 |
p. 1845-1866
22 p.
|
artikel
|
| 93 |
Reliability issues of offset drain transistors after different modes of static electrical stress
|
Papadas, C.
|
|
1993
|
76-77 |
11-12 |
p. 1921-1933
13 p.
|
artikel
|
| 94 |
Reliability issues of silicon-dioxide structures—Application to FLOTOX EEPROM cells
|
Papadas, C.
|
|
1993
|
76-77 |
11-12 |
p. 1867-1908
42 p.
|
artikel
|
| 95 |
Reliability of a focused ion beam repair on digital cmos circuits
|
Van Camp, R
|
|
1996
|
76-77 |
11-12 |
p. 1787-1790
|
artikel
|
| 96 |
Reproducibility of field failures by ESD models — Comparison of HBM, socketed CDM and non-socketed CDM
|
Brodbeck, T.
|
|
1996
|
76-77 |
11-12 |
p. 1719-1722
|
artikel
|
| 97 |
Resistance changes due to Cu transport and precipitation during electromigration in submicrometric Al-0.5% Cu lines
|
Scorzoni, A.
|
|
1996
|
76-77 |
11-12 |
p. 1691-1694
|
artikel
|
| 98 |
Resistance decay after electromigration as the effect of mechanical stress relaxation
|
Baldini, G.L.
|
|
1993
|
76-77 |
11-12 |
p. 1841-1844
4 p.
|
artikel
|
| 99 |
Risetime effects of HBM and square pulses on the failure thresholds of GGNMOS-transistors
|
Musshoff, C.
|
|
1996
|
76-77 |
11-12 |
p. 1743-1746
|
artikel
|
| 100 |
SEGR: A unique failure mode for power MOSFETs in spacecraft
|
Allenspach, M.
|
|
1996
|
76-77 |
11-12 |
p. 1871-1874
|
artikel
|
| 101 |
Self-testing of fully differential multistage circuits using common-mode excitation
|
Toczek, Wojciech
|
|
2008
|
76-77 |
11-12 |
p. 1890-1899
10 p.
|
artikel
|
| 102 |
Significantly improving sub-90nm CMOSFET performances with notch-gate enhanced high tensile-stress contact etch stop layer
|
Hsu, Chia-Wei
|
|
2008
|
76-77 |
11-12 |
p. 1791-1794
4 p.
|
artikel
|
| 103 |
Simulation of the gate burnout of GaAs mesfet
|
Vashchenko, V.A.
|
|
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Soldered joints on leaded components: Development of a design tool to predict failure during temperature cycle tests
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Study of the microstructure of IC interconnect metallisations using analytical transmission electron microscopy and secondary ion mass spectrometry
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Study of the soft leakage current induced ESD on LDD transistor
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Study on the reliability of an InP/InGaAsP integrated laser modulator
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The application of advanced techniques for complex focused-ion-beam device modification
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The degradation mechanisms in high voltage pLEDMOS transistor with thick gate oxide
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The GaAs heterojunction bipolar transistor: an electron device with optical device reliability
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The impact of oxide degradation on the low frequency ( 1 f ) noise behaviour of P channel mosfets
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The influence of process variations on the robustness of an audio power IC
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The in-process bond shear test: Its relationship to ball bond reliability and its application to the reduction of wirebond process variation
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The isocurrent test: A promising tool for wafer-level evaluation of the interconnect reliability
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Threshold voltage degradation in plasma-damaged CMOS transistors — Role of electron and hole traps related to charging damage
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Transient hot-electron effect and its impact on circuit reliability
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Turn-on speed of grounded gate nMOS ESD protection transistors
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Validation of yield models with CMOS/SOS test structures
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Wafer level measurement system for sarf characterization of metal lines
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