| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A bibliography of metal-insulator-semiconductor studies
|
|
|
1968
|
7 |
3 |
p. 274-
1 p.
|
artikel
|
| 2 |
A compatible patterning technique for custom built thin and thick film circuits
|
|
|
1968
|
7 |
3 |
p. 281-
1 p.
|
artikel
|
| 3 |
Advances in computer generation of master artwork for micro-miniature circuits
|
|
|
1968
|
7 |
3 |
p. 284-
1 p.
|
artikel
|
| 4 |
Advances in zone refining
|
|
|
1968
|
7 |
3 |
p. 277-
1 p.
|
artikel
|
| 5 |
A high accuracy automated microflash camera
|
|
|
1968
|
7 |
3 |
p. 283-284
2 p.
|
artikel
|
| 6 |
Analyses of dielectric breakdown in samples and components
|
|
|
1968
|
7 |
3 |
p. 268-
1 p.
|
artikel
|
| 7 |
Analysis of double-gate thin-film transistor
|
|
|
1968
|
7 |
3 |
p. 280-281
2 p.
|
artikel
|
| 8 |
Analysis of single crystal silicon slices by neutron activation
|
|
|
1968
|
7 |
3 |
p. 277-
1 p.
|
artikel
|
| 9 |
Anodic tantalum oxide capacitors prepared from reactively sputtered tantalum
|
|
|
1968
|
7 |
3 |
p. 277-278
2 p.
|
artikel
|
| 10 |
A resonant gate transistor, a frequency selective component for integrated circuits
|
|
|
1968
|
7 |
3 |
p. 275-
1 p.
|
artikel
|
| 11 |
A review of process equipment for an integrated circuit facility
|
|
|
1968
|
7 |
3 |
p. 284-
1 p.
|
artikel
|
| 12 |
A simple non-destructive method of measuring the thickness of transparent thin films between 10 and 600 nm
|
|
|
1968
|
7 |
3 |
p. 282-
1 p.
|
artikel
|
| 13 |
A thermoelectric servo control for ultra-high-vacuum applications
|
|
|
1968
|
7 |
3 |
p. 282-
1 p.
|
artikel
|
| 14 |
Automated mask production for semiconductor technology
|
|
|
1968
|
7 |
3 |
p. 284-
1 p.
|
artikel
|
| 15 |
A versatile integrated logarithmic video amplifier
|
|
|
1968
|
7 |
3 |
p. 283-
1 p.
|
artikel
|
| 16 |
A 28 volt logic microcircuit
|
|
|
1968
|
7 |
3 |
p. 283-
1 p.
|
artikel
|
| 17 |
Computer partitioning improves long-term reliability in space
|
|
|
1968
|
7 |
3 |
p. 271-
1 p.
|
artikel
|
| 18 |
Conduction through TiO2 thin films with large ionic space charge
|
|
|
1968
|
7 |
3 |
p. 279-
1 p.
|
artikel
|
| 19 |
Co-sputtered cermet films
|
|
|
1968
|
7 |
3 |
p. 282-
1 p.
|
artikel
|
| 20 |
Demagnetizing fields in thin magnetic films
|
|
|
1968
|
7 |
3 |
p. 282-
1 p.
|
artikel
|
| 21 |
Design of digital circuits with respect to their reliability
|
|
|
1968
|
7 |
3 |
p. 271-
1 p.
|
artikel
|
| 22 |
Dielectric isolation layers for use in large scale integrated systems
|
|
|
1968
|
7 |
3 |
p. 275-
1 p.
|
artikel
|
| 23 |
Diffused diodes in silicon-on-sapphire
|
|
|
1968
|
7 |
3 |
p. 275-
1 p.
|
artikel
|
| 24 |
Diffusion furnaces for semiconductor processing
|
|
|
1968
|
7 |
3 |
p. 284-
1 p.
|
artikel
|
| 25 |
Diffusion technology in electronics industry
|
|
|
1968
|
7 |
3 |
p. 273-
1 p.
|
artikel
|
| 26 |
Diode voltage—Capacitance method for measuring resistivity and impurity profile in a silicon epitaxial layer
|
|
|
1968
|
7 |
3 |
p. 277-
1 p.
|
artikel
|
| 27 |
Distribution analysis for reliability improvement
|
Barlič, Janez J.
|
|
1968
|
7 |
3 |
p. 237-240
4 p.
|
artikel
|
| 28 |
Effects of traps on thin film transistors
|
|
|
1968
|
7 |
3 |
p. 280-
1 p.
|
artikel
|
| 29 |
Elastic ceramic material has multi-microcircuit uses
|
|
|
1968
|
7 |
3 |
p. 274-
1 p.
|
artikel
|
| 30 |
Electron beam evaporation of metal oxide dielectric films
|
|
|
1968
|
7 |
3 |
p. 284-
1 p.
|
artikel
|
| 31 |
Electron mobility in polar semiconductors at intermediate and high electric fields
|
|
|
1968
|
7 |
3 |
p. 275-276
2 p.
|
artikel
|
| 32 |
Erratum
|
|
|
1968
|
7 |
3 |
p. 285-
1 p.
|
artikel
|
| 33 |
Evaluation of the interfacial resistance of thin film interconnexions
|
Galla, R.T.
|
|
1968
|
7 |
3 |
p. 185-192
8 p.
|
artikel
|
| 34 |
Fabrication of planar silicon transistors without photoresist
|
|
|
1968
|
7 |
3 |
p. 276-
1 p.
|
artikel
|
| 35 |
Failure mode, effects, and criticality analysis
|
|
|
1968
|
7 |
3 |
p. 268-
1 p.
|
artikel
|
| 36 |
Failure modes of integrated circuits and their relationship to reliability
|
Workman, W.
|
|
1968
|
7 |
3 |
p. 257-258
2 p.
|
artikel
|
| 37 |
Field-effect transistor (FET) bibliography
|
|
|
1968
|
7 |
3 |
p. 274-
1 p.
|
artikel
|
| 38 |
Firing characteristics of palladium-silver thick film resistors
|
|
|
1968
|
7 |
3 |
p. 279-
1 p.
|
artikel
|
| 39 |
Flip-component technology
|
|
|
1968
|
7 |
3 |
p. 283-
1 p.
|
artikel
|
| 40 |
Further studies into connector field failure data as related to the commercial aviation industry
|
|
|
1968
|
7 |
3 |
p. 269-
1 p.
|
artikel
|
| 41 |
Galvanomagnetic Thin Film devices
|
|
|
1968
|
7 |
3 |
p. 281-
1 p.
|
artikel
|
| 42 |
Grain size distribution in thin films—I. Conservative systems
|
|
|
1968
|
7 |
3 |
p. 280-
1 p.
|
artikel
|
| 43 |
Grain size distribution in thin films—II. Non-conservative systems
|
|
|
1968
|
7 |
3 |
p. 280-
1 p.
|
artikel
|
| 44 |
How accurate are reliability predictions?
|
|
|
1968
|
7 |
3 |
p. 267-
1 p.
|
artikel
|
| 45 |
In-process control of structural defects in semiconductor manufacture
|
|
|
1968
|
7 |
3 |
p. 268-
1 p.
|
artikel
|
| 46 |
Instability in vacuum deposited silicon oxide
|
|
|
1968
|
7 |
3 |
p. 275-
1 p.
|
artikel
|
| 47 |
Magnetoreactive element and new solid-state inductor
|
|
|
1968
|
7 |
3 |
p. 276-
1 p.
|
artikel
|
| 48 |
Metal-silicon Schottky barriers
|
|
|
1968
|
7 |
3 |
p. 275-
1 p.
|
artikel
|
| 49 |
Microelectronics—another good year and more coming
|
|
|
1968
|
7 |
3 |
p. 274-
1 p.
|
artikel
|
| 50 |
New thin-film resistive memory
|
|
|
1968
|
7 |
3 |
p. 281-282
2 p.
|
artikel
|
| 51 |
Nonelectronic reliability part data collection and analysis
|
|
|
1968
|
7 |
3 |
p. 269-
1 p.
|
artikel
|
| 52 |
Ohmic contacts for GaAs devices
|
|
|
1968
|
7 |
3 |
p. 273-
1 p.
|
artikel
|
| 53 |
Photoconduction and trapping in sputtered tantalum oxide films
|
|
|
1968
|
7 |
3 |
p. 279-
1 p.
|
artikel
|
| 54 |
Power regulation and control using multifunctional integrated circuits
|
|
|
1968
|
7 |
3 |
p. 283-
1 p.
|
artikel
|
| 55 |
Precision thin-film resistors for high frequency applications
|
Maclachlan, D.F.A.
|
|
1968
|
7 |
3 |
p. 175-178
4 p.
|
artikel
|
| 56 |
Predicting integrated circuit reliability via failure mechanisms
|
|
|
1968
|
7 |
3 |
p. 269-270
2 p.
|
artikel
|
| 57 |
Preparation and properties of clean surfaces of aluminum
|
|
|
1968
|
7 |
3 |
p. 280-
1 p.
|
artikel
|
| 58 |
Production techniques for integrated circuits
|
|
|
1968
|
7 |
3 |
p. 284-
1 p.
|
artikel
|
| 59 |
Properties of insulating thin films deposited by R. F. sputtering
|
|
|
1968
|
7 |
3 |
p. 281-
1 p.
|
artikel
|
| 60 |
Quality control during resistance welding of electronic components
|
|
|
1968
|
7 |
3 |
p. 270-
1 p.
|
artikel
|
| 61 |
Quality evaluation of welds as they are made by use of a fibre optic-near infrared sensor
|
|
|
1968
|
7 |
3 |
p. 268-269
2 p.
|
artikel
|
| 62 |
Radiation impedance approach to the analysis of a thin film inductor in a microwave integrated circuit
|
|
|
1968
|
7 |
3 |
p. 281-
1 p.
|
artikel
|
| 63 |
Rapid determination of the temperature coefficient of thin-film resistors
|
Engelter, A.
|
|
1968
|
7 |
3 |
p. 181-184
4 p.
|
artikel
|
| 64 |
Recent developments in thick-film hybrid modules
|
|
|
1968
|
7 |
3 |
p. 281-
1 p.
|
artikel
|
| 65 |
Reliability and maintainability considerations for total ship systems
|
|
|
1968
|
7 |
3 |
p. 272-
1 p.
|
artikel
|
| 66 |
Reliability and maintainability technical and cost relationships
|
|
|
1968
|
7 |
3 |
p. 267-268
2 p.
|
artikel
|
| 67 |
Reliability data from in-flight spacecraft
|
|
|
1968
|
7 |
3 |
p. 271-272
2 p.
|
artikel
|
| 68 |
Reliability growth and its upper limit
|
|
|
1968
|
7 |
3 |
p. 272-
1 p.
|
artikel
|
| 69 |
Reliability of microelectronic circuit connections
|
|
|
1968
|
7 |
3 |
p. 269-
1 p.
|
artikel
|
| 70 |
Reliability of plastic semiconductors
|
|
|
1968
|
7 |
3 |
p. 270-
1 p.
|
artikel
|
| 71 |
Reliability physics for microelectronics
|
|
|
1968
|
7 |
3 |
p. 267-
1 p.
|
artikel
|
| 72 |
Reliable decisions from unreliable measurements
|
|
|
1968
|
7 |
3 |
p. 267-
1 p.
|
artikel
|
| 73 |
Restoration of high frequencies in photomask line patterns by photographic non-linearity
|
|
|
1968
|
7 |
3 |
p. 283-
1 p.
|
artikel
|
| 74 |
Semiconductor device life and system removal rates
|
|
|
1968
|
7 |
3 |
p. 270-
1 p.
|
artikel
|
| 75 |
Semiconductor radiography: Its strengths, weaknesses and the controls necessary to assure its efficacy
|
|
|
1968
|
7 |
3 |
p. 270-
1 p.
|
artikel
|
| 76 |
Silicon device technology
|
|
|
1968
|
7 |
3 |
p. 277-
1 p.
|
artikel
|
| 77 |
Silicon nitride etching
|
|
|
1968
|
7 |
3 |
p. 277-
1 p.
|
artikel
|
| 78 |
Some life-cycle cost estimates for electronic equipments: Methods and results
|
|
|
1968
|
7 |
3 |
p. 271-
1 p.
|
artikel
|
| 79 |
Some results of long term life tests with p-n-p Alloyed Ge-transistors
|
Strutt, M.J.O.
|
|
1968
|
7 |
3 |
p. 241-256
16 p.
|
artikel
|
| 80 |
Sputtered thin-film molybdenum resistors
|
|
|
1968
|
7 |
3 |
p. 277-
1 p.
|
artikel
|
| 81 |
System engineering for reliability and ease of maintenance
|
|
|
1968
|
7 |
3 |
p. 272-
1 p.
|
artikel
|
| 82 |
Tantalum thin film “Breadboards” for switching circuit development
|
|
|
1968
|
7 |
3 |
p. 278-
1 p.
|
artikel
|
| 83 |
Thallium oxide glaze resistors
|
|
|
1968
|
7 |
3 |
p. 279-
1 p.
|
artikel
|
| 84 |
The importance of electric contacts in electronics
|
|
|
1968
|
7 |
3 |
p. 270-271
2 p.
|
artikel
|
| 85 |
The many facets of gallium arsenide
|
|
|
1968
|
7 |
3 |
p. 274-
1 p.
|
artikel
|
| 86 |
Theory of conduction through thin insulating films with ionic space charge
|
|
|
1968
|
7 |
3 |
p. 279-
1 p.
|
artikel
|
| 87 |
The performance and evaluation of thin film insulating crossovers
|
Richardson, W.W.
|
|
1968
|
7 |
3 |
p. 213-216
4 p.
|
artikel
|
| 88 |
The “pinch” resistor in integrated circuits
|
O'Grady, R.P.
|
|
1968
|
7 |
3 |
p. 233-236
4 p.
|
artikel
|
| 89 |
The Resonistor: A frequency selective device utilizing the mechanical resonance of a silicon substrate
|
|
|
1968
|
7 |
3 |
p. 276-
1 p.
|
artikel
|
| 90 |
Thermal analysis of ceramic-based microcircuits
|
|
|
1968
|
7 |
3 |
p. 273-
1 p.
|
artikel
|
| 91 |
Thermal limitations of the thin film transistor
|
|
|
1968
|
7 |
3 |
p. 282-
1 p.
|
artikel
|
| 92 |
Thermische einflusse der schaltfolge auf die lebensdauer des schutzgaskontaktes bei starker induktiver belastung
|
|
|
1968
|
7 |
3 |
p. 271-
1 p.
|
artikel
|
| 93 |
Thick film field effect transistors based on silk-screened CdS
|
|
|
1968
|
7 |
3 |
p. 278-
1 p.
|
artikel
|
| 94 |
Thin film dielectric capacitors formed by reactive sputtering
|
|
|
1968
|
7 |
3 |
p. 278-
1 p.
|
artikel
|
| 95 |
Thin film hafnium technology
|
|
|
1968
|
7 |
3 |
p. 278-
1 p.
|
artikel
|
| 96 |
TIROS: A case history in reliability
|
|
|
1968
|
7 |
3 |
p. 272-
1 p.
|
artikel
|
| 97 |
Transition probability of impact ionization in silicon
|
|
|
1968
|
7 |
3 |
p. 274-275
2 p.
|
artikel
|
| 98 |
Travelling solvent defects on silicon wafers
|
|
|
1968
|
7 |
3 |
p. 268-
1 p.
|
artikel
|
| 99 |
Two experimental methods for the determination of the technical reliabilities of a system and its components
|
|
|
1968
|
7 |
3 |
p. 265-
1 p.
|
artikel
|
| 100 |
Ultra reliable submerged repeaters
|
|
|
1968
|
7 |
3 |
p. 273-
1 p.
|
artikel
|
| 101 |
Vacuum deposition of glass dielectrics
|
|
|
1968
|
7 |
3 |
p. 282-
1 p.
|
artikel
|
| 102 |
Vacuum deposition of silicon on corundum
|
|
|
1968
|
7 |
3 |
p. 279-280
2 p.
|
artikel
|
| 103 |
What reliability figures can I expect from ICs and how are they derived?
|
|
|
1968
|
7 |
3 |
p. 270-
1 p.
|
artikel
|
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