| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A compatible technique for the formation of thin tantalum film resistors on silicon integrated circuits
|
|
|
1967
|
6 |
2 |
p. 200-201
2 p.
|
artikel
|
| 2 |
Advanced thin-film capacitor processes
|
|
|
1967
|
6 |
2 |
p. 204-
1 p.
|
artikel
|
| 3 |
Advance materials in microminiaturization and optical communication
|
|
|
1967
|
6 |
2 |
p. 195-
1 p.
|
artikel
|
| 4 |
A microelectronic laboratory for universities
|
|
|
1967
|
6 |
2 |
p. 197-
1 p.
|
artikel
|
| 5 |
A minimal capacitor cascade synthesis for integrated circuits
|
Newcomb, R.W.
|
|
1967
|
6 |
2 |
p. 113-124
12 p.
|
artikel
|
| 6 |
Applications of solid-liquid interdiffusion (SLID) bonding in integrated-circuit fabrication
|
|
|
1967
|
6 |
2 |
p. 198-
1 p.
|
artikel
|
| 7 |
A review of thin film techniques for microelectronics
|
Lloyd, P.
|
|
1967
|
6 |
2 |
p. 177-187
11 p.
|
artikel
|
| 8 |
A successful approach to vertical stack assemblies of flat packaged microcircuits
|
|
|
1967
|
6 |
2 |
p. 205-206
2 p.
|
artikel
|
| 9 |
A survey of crystal-growing processes and equipment
|
|
|
1967
|
6 |
2 |
p. 201-
1 p.
|
artikel
|
| 10 |
Automating the photo-resist developing process
|
|
|
1967
|
6 |
2 |
p. 195-
1 p.
|
artikel
|
| 11 |
Bad-weld detector uses integrated circuits
|
|
|
1967
|
6 |
2 |
p. 205-
1 p.
|
artikel
|
| 12 |
Birefringent tape—a new, easier technique for separating thin-film and printed circuit master drawings with perfect registration
|
|
|
1967
|
6 |
2 |
p. 195-
1 p.
|
artikel
|
| 13 |
Capacitors for monolithic integrated circuits
|
|
|
1967
|
6 |
2 |
p. 191-
1 p.
|
artikel
|
| 14 |
Capacitors-reliability, life and the relevance of circuit design
|
|
|
1967
|
6 |
2 |
p. 191-192
2 p.
|
artikel
|
| 15 |
Cermet resistors by reactive sputtering
|
|
|
1967
|
6 |
2 |
p. 205-
1 p.
|
artikel
|
| 16 |
Characteristics of silicon doped low-energy ion implantation
|
|
|
1967
|
6 |
2 |
p. 197-198
2 p.
|
artikel
|
| 17 |
Characteristics of soft metals for electrical connexions
|
Taylor, T.C.
|
|
1967
|
6 |
2 |
p. 125-130
6 p.
|
artikel
|
| 18 |
Characteristics of some chromium resistor films
|
|
|
1967
|
6 |
2 |
p. 205-
1 p.
|
artikel
|
| 19 |
Circuit board interlayer connexion
|
|
|
1967
|
6 |
2 |
p. 206-
1 p.
|
artikel
|
| 20 |
Comparative reliability tests on silicon-planar-switching transistors of european and U.S. manufacture
|
Guekos, G.
|
|
1967
|
6 |
2 |
p. 143-162
20 p.
|
artikel
|
| 21 |
Component reliability in telecommunications equipment—part 2
|
|
|
1967
|
6 |
2 |
p. 194-
1 p.
|
artikel
|
| 22 |
Component reliability in telecommunications equipment—part 1
|
|
|
1967
|
6 |
2 |
p. 192-
1 p.
|
artikel
|
| 23 |
Conduction in discontinuous metal films
|
|
|
1967
|
6 |
2 |
p. 202-
1 p.
|
artikel
|
| 24 |
Considerations concerning the reliability of relay transmitters
|
|
|
1967
|
6 |
2 |
p. 196-
1 p.
|
artikel
|
| 25 |
Contour deposition—a new epitaxial deposition technique for semiconductor devices and integrated circuits
|
|
|
1967
|
6 |
2 |
p. 201-
1 p.
|
artikel
|
| 26 |
Controlled doping of germanium layers made by the evaporation-condensation method
|
|
|
1967
|
6 |
2 |
p. 200-
1 p.
|
artikel
|
| 27 |
Crystallization of amorphous titanium dioxide films prepared by vacuum evaporation
|
|
|
1967
|
6 |
2 |
p. 202-
1 p.
|
artikel
|
| 28 |
Deposition of germanium films by sputtering
|
|
|
1967
|
6 |
2 |
p. 204-
1 p.
|
artikel
|
| 29 |
Deposition parameter effects on vapour-deposited zinc films
|
|
|
1967
|
6 |
2 |
p. 203-
1 p.
|
artikel
|
| 30 |
Dielectric thin films through rf sputtering
|
|
|
1967
|
6 |
2 |
p. 204-
1 p.
|
artikel
|
| 31 |
Effect of ferroelectric polarization on insulated-gate thin-film transistor parameters
|
|
|
1967
|
6 |
2 |
p. 204-
1 p.
|
artikel
|
| 32 |
Effects of diffusion current on characteristics of metal-oxide (insulator)-semiconductor transistors
|
|
|
1967
|
6 |
2 |
p. 201-
1 p.
|
artikel
|
| 33 |
Electron scattering mechanisms in n-type epitaxial GaP
|
|
|
1967
|
6 |
2 |
p. 199-200
2 p.
|
artikel
|
| 34 |
Environmental testing of electronic components—part 2
|
|
|
1967
|
6 |
2 |
p. 192-
1 p.
|
artikel
|
| 35 |
Environmental testing of electronic components—part 1
|
|
|
1967
|
6 |
2 |
p. 193-
1 p.
|
artikel
|
| 36 |
Error analysis in sampling theory
|
|
|
1967
|
6 |
2 |
p. 191-
1 p.
|
artikel
|
| 37 |
Exponential RC networks
|
Beneš, O.
|
|
1967
|
6 |
2 |
p. 163-164
2 p.
|
artikel
|
| 38 |
Fabrication considerations for monolithic electro-optical mosaics
|
|
|
1967
|
6 |
2 |
p. 198-
1 p.
|
artikel
|
| 39 |
Face-down bonding of monolithic integrated circuit logic arrays
|
|
|
1967
|
6 |
2 |
p. 205-
1 p.
|
artikel
|
| 40 |
Failure mechanisms in thin-film field effect transistors
|
|
|
1967
|
6 |
2 |
p. 191-
1 p.
|
artikel
|
| 41 |
Failure statistics for components used in equipment for closed circuit television
|
|
|
1967
|
6 |
2 |
p. 193-194
2 p.
|
artikel
|
| 42 |
Finding the MTBF of repairable systems by reduction of the reliability block diagram
|
Buzacott, J.A.
|
|
1967
|
6 |
2 |
p. 105-112
8 p.
|
artikel
|
| 43 |
GaAs epitaxial technology for integrated circuits
|
|
|
1967
|
6 |
2 |
p. 198-199
2 p.
|
artikel
|
| 44 |
Graphs reveal reasons for high cost maintenance
|
|
|
1967
|
6 |
2 |
p. 196-
1 p.
|
artikel
|
| 45 |
Growth of single-crystal silicon on beryllium oxide
|
|
|
1967
|
6 |
2 |
p. 198-
1 p.
|
artikel
|
| 46 |
Hybrid microelectronics bonding and packaging techniques
|
|
|
1967
|
6 |
2 |
p. 205-
1 p.
|
artikel
|
| 47 |
Impurity conduction in diffused germanium and silicon layers
|
|
|
1967
|
6 |
2 |
p. 200-
1 p.
|
artikel
|
| 48 |
Integrated circuit design analysis by digital computer
|
|
|
1967
|
6 |
2 |
p. 196-
1 p.
|
artikel
|
| 49 |
Integrated electronics—its place in education
|
|
|
1967
|
6 |
2 |
p. 197-
1 p.
|
artikel
|
| 50 |
Large-area masking with patterns of micron and submicron element size
|
|
|
1967
|
6 |
2 |
p. 197-
1 p.
|
artikel
|
| 51 |
Large scale integration technology
|
|
|
1967
|
6 |
2 |
p. 197-
1 p.
|
artikel
|
| 52 |
Maintenance strategy diagramming
|
|
|
1967
|
6 |
2 |
p. 195-
1 p.
|
artikel
|
| 53 |
Matrix modles for reliability estimates
|
|
|
1967
|
6 |
2 |
p. 196-
1 p.
|
artikel
|
| 54 |
Microelectronics goes commercial
|
|
|
1967
|
6 |
2 |
p. 196-
1 p.
|
artikel
|
| 55 |
Organization of silicon integrated circuit development
|
Hester, D.R.
|
|
1967
|
6 |
2 |
p. 95-98
4 p.
|
artikel
|
| 56 |
Packaging multiple assemblies of integrated circuit dice
|
|
|
1967
|
6 |
2 |
p. 206-
1 p.
|
artikel
|
| 57 |
Power dissipation in a diode in a common burn-in circuit
|
Root, C.D.
|
|
1967
|
6 |
2 |
p. 189-190
2 p.
|
artikel
|
| 58 |
Precision thin-film resistors
|
|
|
1967
|
6 |
2 |
p. 204-
1 p.
|
artikel
|
| 59 |
Predicting the reliability of a system
|
|
|
1967
|
6 |
2 |
p. 196-
1 p.
|
artikel
|
| 60 |
Preparation and characterization of evaporated boron films
|
|
|
1967
|
6 |
2 |
p. 204-
1 p.
|
artikel
|
| 61 |
Preparation and properties of silicon telluride
|
|
|
1967
|
6 |
2 |
p. 199-
1 p.
|
artikel
|
| 62 |
Problems in the specification and assessment of electronic-equipment reliability
|
|
|
1967
|
6 |
2 |
p. 191-
1 p.
|
artikel
|
| 63 |
Processing monolithic silicon integrated circuits
|
|
|
1967
|
6 |
2 |
p. 199-
1 p.
|
artikel
|
| 64 |
Process technology for linear integrated circuits
|
|
|
1967
|
6 |
2 |
p. 203-
1 p.
|
artikel
|
| 65 |
Properties and structure of thin silicon films sputtered on fused quartz substrate
|
|
|
1967
|
6 |
2 |
p. 203-204
2 p.
|
artikel
|
| 66 |
Reliability of components under radiation stress. Problems to be solved and some experimental results
|
|
|
1967
|
6 |
2 |
p. 193-
1 p.
|
artikel
|
| 67 |
Reliability of components used in stardardized electronics at the C.E.A.
|
|
|
1967
|
6 |
2 |
p. 193-
1 p.
|
artikel
|
| 68 |
Reliability of electromechanical switching devices—an engineer's views
|
Hyde, N.E.
|
|
1967
|
6 |
2 |
p. 81-94
14 p.
|
artikel
|
| 69 |
Reliability of public service installations
|
|
|
1967
|
6 |
2 |
p. 194-195
2 p.
|
artikel
|
| 70 |
Reliability predictions for repairable systems containing redundancy
|
Creasey, D.J.
|
|
1967
|
6 |
2 |
p. 135-142
8 p.
|
artikel
|
| 71 |
Resistivity and structure of sputtered molybdenum films
|
|
|
1967
|
6 |
2 |
p. 202-203
2 p.
|
artikel
|
| 72 |
Resistivity and structure of sputtered molybdenum films
|
|
|
1967
|
6 |
2 |
p. 202-
1 p.
|
artikel
|
| 73 |
Review of test equipment used in integrated circuit manufacturing
|
|
|
1967
|
6 |
2 |
p. 195-
1 p.
|
artikel
|
| 74 |
Secondary-electron analysis of electronic micro-circuits
|
Potts, H.R.
|
|
1967
|
6 |
2 |
p. 173-174
2 p.
|
artikel
|
| 75 |
Separation of the linear and parabolic terms in the steam oxidation of silicon
|
|
|
1967
|
6 |
2 |
p. 200-
1 p.
|
artikel
|
| 76 |
Silica: a moderating agent in silicon semiconductors
|
|
|
1967
|
6 |
2 |
p. 199-
1 p.
|
artikel
|
| 77 |
Silicon planar reliability and the future—part 2
|
|
|
1967
|
6 |
2 |
p. 191-
1 p.
|
artikel
|
| 78 |
Silicon planar reliability and the future—part 1
|
|
|
1967
|
6 |
2 |
p. 193-
1 p.
|
artikel
|
| 79 |
Solid-to-solid diffusion in the gallium arsenide device technology
|
|
|
1967
|
6 |
2 |
p. 202-
1 p.
|
artikel
|
| 80 |
Tantalum film deposited by asymmetric a-c sputtering
|
|
|
1967
|
6 |
2 |
p. 204-
1 p.
|
artikel
|
| 81 |
Temperature coefficients of resistance of evaporated thin films
|
|
|
1967
|
6 |
2 |
p. 203-
1 p.
|
artikel
|
| 82 |
The deposition of silicon upon sapphire substrates
|
|
|
1967
|
6 |
2 |
p. 203-
1 p.
|
artikel
|
| 83 |
The maximum dielectric strength of thin silicon oxide films
|
|
|
1967
|
6 |
2 |
p. 199-
1 p.
|
artikel
|
| 84 |
The preparation and properties of sputtered aluminium thin films
|
|
|
1967
|
6 |
2 |
p. 202-
1 p.
|
artikel
|
| 85 |
The reliability of components according to the layout of equipment in use
|
|
|
1967
|
6 |
2 |
p. 194-
1 p.
|
artikel
|
| 86 |
The reliability of components in P.T.T. equipment
|
|
|
1967
|
6 |
2 |
p. 194-
1 p.
|
artikel
|
| 87 |
The reliability of solid circuits
|
|
|
1967
|
6 |
2 |
p. 193-
1 p.
|
artikel
|
| 88 |
The use of MOS structure for the design of high value resistors in monolithic integrated circuits
|
|
|
1967
|
6 |
2 |
p. 200-
1 p.
|
artikel
|
| 89 |
Transistor and diode chip development
|
|
|
1967
|
6 |
2 |
p. 197-
1 p.
|
artikel
|
| 90 |
Transistors: reliability, life and the relevance of circuit design
|
|
|
1967
|
6 |
2 |
p. 192-
1 p.
|
artikel
|
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