| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A metal-oxide-semiconductor (MOS) hall element
|
|
|
1967
|
6 |
1 |
p. 75-
1 p.
|
artikel
|
| 2 |
A method for statistical tolerance calculation
|
|
|
1967
|
6 |
1 |
p. 67-
1 p.
|
artikel
|
| 3 |
A microelectronics interconnexion method
|
|
|
1967
|
6 |
1 |
p. 72-73
2 p.
|
artikel
|
| 4 |
A monolithic silicon class B hearing aid amplifier
|
|
|
1967
|
6 |
1 |
p. 80-
1 p.
|
artikel
|
| 5 |
An evaluation method for deposited thin film interfacial interconnexions
|
|
|
1967
|
6 |
1 |
p. 77-
1 p.
|
artikel
|
| 6 |
An integrated analog switch using a bidirectional transistor
|
|
|
1967
|
6 |
1 |
p. 80-
1 p.
|
artikel
|
| 7 |
Application of optoelectronics to semiconductor microcircuits
|
|
|
1967
|
6 |
1 |
p. 72-
1 p.
|
artikel
|
| 8 |
Applications of inorganic and organic thick films in electronic equipment
|
|
|
1967
|
6 |
1 |
p. 76-77
2 p.
|
artikel
|
| 9 |
Applying fasteners effectively
|
|
|
1967
|
6 |
1 |
p. 69-
1 p.
|
artikel
|
| 10 |
A prediction of the photoresist influence on integrated circuit yield
|
|
|
1967
|
6 |
1 |
p. 73-
1 p.
|
artikel
|
| 11 |
A versatile digital frequency synthesizer for use in mobile radio communication sets
|
|
|
1967
|
6 |
1 |
p. 79-
1 p.
|
artikel
|
| 12 |
Beam-lead technology
|
|
|
1967
|
6 |
1 |
p. 72-
1 p.
|
artikel
|
| 13 |
Capacitors
|
Girling, D.S.
|
|
1967
|
6 |
1 |
p. 35-51
17 p.
|
artikel
|
| 14 |
Carrier concentration and minority carrier lifetime measurement in semiconductor epitaxial by the MOS capacitance method
|
|
|
1967
|
6 |
1 |
p. 74-
1 p.
|
artikel
|
| 15 |
Characteristics of non-vacuum deposited metal films for electronic circuitry
|
|
|
1967
|
6 |
1 |
p. 76-
1 p.
|
artikel
|
| 16 |
Circuit failure asymmetries for reliability improvement in digital circuits
|
|
|
1967
|
6 |
1 |
p. 71-
1 p.
|
artikel
|
| 17 |
Correlation techniques applied to evaluating vacuum deposition of thin film nichrome resistor arrays
|
|
|
1967
|
6 |
1 |
p. 77-
1 p.
|
artikel
|
| 18 |
Deposition of tin oxide system resistance film through the droplet flash vapour deposition process
|
|
|
1967
|
6 |
1 |
p. 76-
1 p.
|
artikel
|
| 19 |
Detection of resistivity variation in a semiconductor pellet with an electron beam
|
Munakata, C.
|
|
1967
|
6 |
1 |
p. 27-32
6 p.
|
artikel
|
| 20 |
Dislocation reactions in silicon web-dendrite crystals
|
|
|
1967
|
6 |
1 |
p. 73-
1 p.
|
artikel
|
| 21 |
Editorial Board
|
|
|
1967
|
6 |
1 |
p. IFC-
1 p.
|
artikel
|
| 22 |
Effect of fast cooling on diffusion-induced imperfections in silicon
|
|
|
1967
|
6 |
1 |
p. 73-
1 p.
|
artikel
|
| 23 |
Electromechanical switching devices: reliability, life and the relevance of circuit design
|
|
|
1967
|
6 |
1 |
p. 69-
1 p.
|
artikel
|
| 24 |
Epitaxial deposition of cadmium selenide
|
|
|
1967
|
6 |
1 |
p. 78-
1 p.
|
artikel
|
| 25 |
Equilibrium potentials of isolated metal areas during electron beam bombardment polymerization
|
Geddes, K.R.
|
|
1967
|
6 |
1 |
p. 17-24
8 p.
|
artikel
|
| 26 |
Evaluating sealed contacts
|
|
|
1967
|
6 |
1 |
p. 70-
1 p.
|
artikel
|
| 27 |
Failure analysis of microcircuitry by scanning electron microscopy
|
Thornton, P.R.
|
|
1967
|
6 |
1 |
p. 9-14
6 p.
|
artikel
|
| 28 |
Frequency behaviour of diffused resistances
|
|
|
1967
|
6 |
1 |
p. 72-
1 p.
|
artikel
|
| 29 |
Infra-red: A new approach to thermal measurement for reliability
|
|
|
1967
|
6 |
1 |
p. 68-
1 p.
|
artikel
|
| 30 |
Infra-red interference spectra observed in silicon epitaxial wafers
|
|
|
1967
|
6 |
1 |
p. 74-
1 p.
|
artikel
|
| 31 |
Interstitial-substitutional diffusion in a finite medium, gold into silicon
|
|
|
1967
|
6 |
1 |
p. 73-
1 p.
|
artikel
|
| 32 |
Introducing redundancy in analog systems
|
|
|
1967
|
6 |
1 |
p. 67-
1 p.
|
artikel
|
| 33 |
Ion drift in the fringing field of MOS capacitors
|
|
|
1967
|
6 |
1 |
p. 75-
1 p.
|
artikel
|
| 34 |
Microcircuit photomasks from automatic techniques
|
|
|
1967
|
6 |
1 |
p. 72-
1 p.
|
artikel
|
| 35 |
Misfit dislocations in semiconductors
|
|
|
1967
|
6 |
1 |
p. 74-
1 p.
|
artikel
|
| 36 |
Multilayer circuit boards: sharpening an imperfect art
|
|
|
1967
|
6 |
1 |
p. 70-
1 p.
|
artikel
|
| 37 |
New trends in microelectronics fabrication technology 1965–1966 (Part 1)
|
|
|
1967
|
6 |
1 |
p. 71-
1 p.
|
artikel
|
| 38 |
Nomographic design of vacuum gasket seals
|
|
|
1967
|
6 |
1 |
p. 78-
1 p.
|
artikel
|
| 39 |
Overlay transistors move into microwave region
|
|
|
1967
|
6 |
1 |
p. 70-
1 p.
|
artikel
|
| 40 |
Packaging with laser welding
|
|
|
1967
|
6 |
1 |
p. 72-
1 p.
|
artikel
|
| 41 |
Parameter estimation for a generalized gamma distribution
|
|
|
1967
|
6 |
1 |
p. 68-
1 p.
|
artikel
|
| 42 |
Physics of failure and accelerated testing
|
|
|
1967
|
6 |
1 |
p. 69-
1 p.
|
artikel
|
| 43 |
Possiblities and limits of increasing reliability in communication engineering by redundancy (Part 2)
|
|
|
1967
|
6 |
1 |
p. 71-
1 p.
|
artikel
|
| 44 |
Prediction and engineering assessment in early design
|
|
|
1967
|
6 |
1 |
p. 71-
1 p.
|
artikel
|
| 45 |
Proper test-point allocation
|
|
|
1967
|
6 |
1 |
p. 80-
1 p.
|
artikel
|
| 46 |
Properties of indium oxide glaze resistors
|
|
|
1967
|
6 |
1 |
p. 76-
1 p.
|
artikel
|
| 47 |
Reliability as a management tool
|
|
|
1967
|
6 |
1 |
p. 67-
1 p.
|
artikel
|
| 48 |
Reliability of plated-through holes in multilayer boards
|
|
|
1967
|
6 |
1 |
p. 70-
1 p.
|
artikel
|
| 49 |
Reliability testing in a bayesian context
|
|
|
1967
|
6 |
1 |
p. 67-
1 p.
|
artikel
|
| 50 |
Resistor reliability, choice of type and influence of environment
|
Nichols, B.H.
|
|
1967
|
6 |
1 |
p. 1-8
8 p.
|
artikel
|
| 51 |
Second breakdown and current distributions in transistors
|
|
|
1967
|
6 |
1 |
p. 70-
1 p.
|
artikel
|
| 52 |
Semiconductor device reliability evaluation and improvement on minuteman II CQAP
|
|
|
1967
|
6 |
1 |
p. 70-
1 p.
|
artikel
|
| 53 |
Service-life and reliability of mullard electrolytic capacitors
|
|
|
1967
|
6 |
1 |
p. 68-69
2 p.
|
artikel
|
| 54 |
Solion tetrode—A reliable integrator and memory device
|
|
|
1967
|
6 |
1 |
p. 71-
1 p.
|
artikel
|
| 55 |
Stability of palladium oxide resistive glaze films
|
Melan, E.H.
|
|
1967
|
6 |
1 |
p. 53-54
2 p.
|
artikel
|
| 56 |
Tantalum film circuits
|
|
|
1967
|
6 |
1 |
p. 77-
1 p.
|
artikel
|
| 57 |
Testing co-axial cables
|
|
|
1967
|
6 |
1 |
p. 69-
1 p.
|
artikel
|
| 58 |
The binding entropy of point defects to dislocations
|
|
|
1967
|
6 |
1 |
p. 74-
1 p.
|
artikel
|
| 59 |
The composition and some physical properties of manganese oxide thin films
|
|
|
1967
|
6 |
1 |
p. 77-78
2 p.
|
artikel
|
| 60 |
The connector specifications
|
|
|
1967
|
6 |
1 |
p. 69-
1 p.
|
artikel
|
| 61 |
The degenerate semiconductor thin films—II. the longitudinal electrical conductivity
|
|
|
1967
|
6 |
1 |
p. 74-
1 p.
|
artikel
|
| 62 |
The degenerate semiconductor thin films—I. The fermi energy
|
|
|
1967
|
6 |
1 |
p. 73-
1 p.
|
artikel
|
| 63 |
The design of digital counters using micrologic elements
|
|
|
1967
|
6 |
1 |
p. 79-80
2 p.
|
artikel
|
| 64 |
The effect of moisture upon tantalum oxide thin film capacitors
|
|
|
1967
|
6 |
1 |
p. 78-
1 p.
|
artikel
|
| 65 |
The effects of fixed bulk charge on the characteristics of metal-oxide-semiconductor transistors
|
|
|
1967
|
6 |
1 |
p. 75-
1 p.
|
artikel
|
| 66 |
The effects of fixed bulk charge on the thermal noise in metal-oxide-seminconductor transistors
|
|
|
1967
|
6 |
1 |
p. 75-
1 p.
|
artikel
|
| 67 |
The etching and polishing behaviour of Ge and Si with HI
|
|
|
1967
|
6 |
1 |
p. 73-
1 p.
|
artikel
|
| 68 |
The failure of plastics insulants due to silver migration
|
|
|
1967
|
6 |
1 |
p. 68-
1 p.
|
artikel
|
| 69 |
The properties of Viton “A” elastomers—III. Steady state and transient activated gas emission processes from Viton “A”
|
|
|
1967
|
6 |
1 |
p. 79-
1 p.
|
artikel
|
| 70 |
The properties of Viton “A” elastomers—II. The influence of permeation diffusion, and solubility of gases on the gas emission rate from an O-ring used as an atmospheric seal or high vacuum immersed
|
|
|
1967
|
6 |
1 |
p. 79-
1 p.
|
artikel
|
| 71 |
The reliability of electronic systems
|
|
|
1967
|
6 |
1 |
p. 71-
1 p.
|
artikel
|
| 72 |
Thermal analysis of hybrid microcircuits
|
|
|
1967
|
6 |
1 |
p. 72-
1 p.
|
artikel
|
| 73 |
The use of X-ray diffraction to study defects occurring during silicon-device manufacture
|
|
|
1967
|
6 |
1 |
p. 75-76
2 p.
|
artikel
|
| 74 |
Thin film hafnium-hafnium dioxide capacitors
|
|
|
1967
|
6 |
1 |
p. 77-
1 p.
|
artikel
|
| 75 |
Tin and zinc diffusion into gallium arsenide from doped silicon dioxide layers
|
|
|
1967
|
6 |
1 |
p. 74-
1 p.
|
artikel
|
| 76 |
Tungsten carbide-tungaten resistive glazes
|
|
|
1967
|
6 |
1 |
p. 78-
1 p.
|
artikel
|
| 77 |
Ultrahigh vacuum station for thin film and residual gas analysis studies
|
|
|
1967
|
6 |
1 |
p. 78-79
2 p.
|
artikel
|
| 78 |
Vacuum deposited molybdenum films
|
|
|
1967
|
6 |
1 |
p. 78-
1 p.
|
artikel
|
| 79 |
What is meaningful integrated-circuit reliability?
|
|
|
1967
|
6 |
1 |
p. 67-68
2 p.
|
artikel
|
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