Digitale Bibliotheek
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                             171 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 A distributed minority and majority voting based redundancy scheme Balasubramanian, P.
2015
55 9-10 p. 1373-1378
6 p.
artikel
2 Ageing mechanisms in Deep Trench Termination (DT2) Diode Baccar, F.
2015
55 9-10 p. 1981-1987
7 p.
artikel
3 Ageing monitoring in IGBT module under sinusoidal loading Ghimire, Pramod
2015
55 9-10 p. 1945-1949
5 p.
artikel
4 Ageing of InGaN-based LEDs: Effects on internal quantum efficiency and role of defects La Grassa, M.
2015
55 9-10 p. 1775-1778
4 p.
artikel
5 A methodologic project to characterize and model COTS component reliability Durier, A.
2015
55 9-10 p. 2097-2102
6 p.
artikel
6 Analysis and modeling of passive device degradation for a long-term electromagnetic emission study of a DC–DC converter Huang, H.
2015
55 9-10 p. 2061-2066
6 p.
artikel
7 Analysis of neutron-induced single-event burnout in SiC power MOSFETs Shoji, Tomoyuki
2015
55 9-10 p. 1517-1521
5 p.
artikel
8 Analysis of the role of the parasitic BJT of Super-Junction power MOSFET under TLP stress Chirilă, T.
2015
55 9-10 p. 1481-1485
5 p.
artikel
9 An athermal measurement technique for long time constants traps characterization in GaN HEMT transistors Divay, A.
2015
55 9-10 p. 1703-1707
5 p.
artikel
10 Anomaly detection for satellite power subsystem with associated rules based on Kernel Principal Component Analysis Pan, Dawei
2015
55 9-10 p. 2082-2086
5 p.
artikel
11 A novel analytical method for defect tolerance assessment Slimani, M.
2015
55 9-10 p. 1285-1289
5 p.
artikel
12 An SEM/STM based nanoprobing and TEM study of breakdown locations in HfO2/SiOx dielectric stacks for failure analysis Shubhakar, K.
2015
55 9-10 p. 1450-1455
6 p.
artikel
13 A numerical procedure for simulating thermal oxidation diffusion of epoxy molding compounds Cui, Zaifu
2015
55 9-10 p. 1877-1881
5 p.
artikel
14 A reliable solderless connection technique for high I/O counts ceramic land grid array package for space applications Sauveplane, J.B.
2015
55 9-10 p. 1815-1820
6 p.
artikel
15 A robust electro-thermal IGBT SPICE model: Application to short-circuit protection circuit design Cavaiuolo, D.
2015
55 9-10 p. 1971-1975
5 p.
artikel
16 ASTEP (2005–2015): Ten years of soft error and atmospheric radiation characterization on the Plateau de Bure Autran, J.L.
2015
55 9-10 p. 1506-1511
6 p.
artikel
17 A thermal modeling methodology for power semiconductor modules van der Broeck, Christoph H.
2015
55 9-10 p. 1938-1944
7 p.
artikel
18 Auger electron spectroscopy characterization of Ti/NiV/Ag multilayer back-metal for monitoring of Ni migration on Ag surface Ricciari, R.
2015
55 9-10 p. 1617-1621
5 p.
artikel
19 A unified multiple stress reliability model for microelectronic devices — Application to 1.55μm DFB laser diode module for space validation Bensoussan, A.
2015
55 9-10 p. 1729-1735
7 p.
artikel
20 AVERT: An elaborate model for simulating variable retention time in DRAMs Kim, Dae-Hyun
2015
55 9-10 p. 1313-1319
7 p.
artikel
21 Avoiding flex cracks in ceramic capacitors: Analytical tool for a reliable failure analysis and guideline for positioning cercaps on PCBs Vogel, G.
2015
55 9-10 p. 2159-2164
6 p.
artikel
22 A way to implement the electro-optical technique to inertial MEMS Melendez, K.
2015
55 9-10 p. 1916-1919
4 p.
artikel
23 Breakdown behaviour of high-voltage GaN-HEMTs Saito, W.
2015
55 9-10 p. 1682-1686
5 p.
artikel
24 Built-in self-test for bias temperature instability, hot-carrier injection, and gate oxide breakdown in embedded DRAMs Kim, Dae-Hyun
2015
55 9-10 p. 2113-2118
6 p.
artikel
25 Case study of failure analysis in thin film silicon solar cell Mello, D.
2015
55 9-10 p. 1800-1803
4 p.
artikel
26 16-Channel micro magnetic flux sensor array for IGBT current distribution measurement Tomonaga, H.
2015
55 9-10 p. 1357-1362
6 p.
artikel
27 Characteristics and aging of PCB embedded power electronics Randoll, Richard
2015
55 9-10 p. 1634-1639
6 p.
artikel
28 Characterization and analysis of electrical trap related effects on the reliability of AlInN/GaN HEMTs Petitdidier, S.
2015
55 9-10 p. 1719-1723
5 p.
artikel
29 Characterization and model of temperature effect on the conducted immunity of Op-Amp Dubois, T.
2015
55 9-10 p. 2055-2060
6 p.
artikel
30 Charge induced by ionizing radiation understood as a disturbance in a sliding mode control of dielectric charge Domínguez-Pumar, Manuel
2015
55 9-10 p. 1926-1931
6 p.
artikel
31 Clamp voltage and ideality factor in laser diodes Vanzi, M.
2015
55 9-10 p. 1736-1740
5 p.
artikel
32 Compact thermal modeling of spin transfer torque magnetic tunnel junction Wang, Y.
2015
55 9-10 p. 1649-1653
5 p.
artikel
33 Comparison of analytic distribution function models for hot-carrier degradation modeling in nLDMOSFETs Sharma, P.
2015
55 9-10 p. 1427-1432
6 p.
artikel
34 Comparison of Si <100> and <110> crystal orientation nanowire transistor reliability using Poisson–Schrödinger and classical simulations Gerrer, L.
2015
55 9-10 p. 1307-1312
6 p.
artikel
35 Comprehensive 2D-carrier profiling of low-doping region by high-sensitivity scanning spreading resistance microscopy (SSRM) for power device applications Zhang, L.
2015
55 9-10 p. 1559-1563
5 p.
artikel
36 Comprehensive reliability and aging analysis on SRAMs within microprocessor systems Liu, Taizhi
2015
55 9-10 p. 1290-1296
7 p.
artikel
37 Conductive filament evolution in HfO2 resistive RAM device during constant voltage stress Lorenzi, P.
2015
55 9-10 p. 1446-1449
4 p.
artikel
38 Correlation between forward-reverse low-frequency noise and atypical I–V signatures in 980nm high-power laser diodes Del Vecchio, P.
2015
55 9-10 p. 1741-1745
5 p.
artikel
39 Correlation between mechanical properties and microstructure of different aluminum wire qualities after ultrasonic bonding Broll, M.S.
2015
55 9-10 p. 1855-1860
6 p.
artikel
40 Correlation between transient evolutions of the gate and drain currents in AlGaN/GaN technologies Lazăr, O.
2015
55 9-10 p. 1714-1718
5 p.
artikel
41 Coupled electro-magnetic field & Lorentz force effects in silicon and metal for ESD investigation in transient and harmonic regimes Galy, Philippe
2015
55 9-10 p. 1532-1536
5 p.
artikel
42 DC–DC's total ionizing dose hardness decrease in passive reserve mode Kessarinskiy, L.N.
2015
55 9-10 p. 1527-1531
5 p.
artikel
43 Degradation of 0.25μm GaN HEMTs under high temperature stress test Dammann, M.
2015
55 9-10 p. 1667-1671
5 p.
artikel
44 Degradation testing and failure analysis of DC film capacitors under high humidity conditions Wang, Huai
2015
55 9-10 p. 2007-2011
5 p.
artikel
45 Design and implementation of a low cost test bench to assess the reliability of FPGA Naouss, M.
2015
55 9-10 p. 1341-1345
5 p.
artikel
46 Design for built-in FPGA reliability via fine-grained 2-D error correction codes Ahilan, A.
2015
55 9-10 p. 2108-2112
5 p.
artikel
47 Design of SET tolerant LC oscillators using distributed bias circuitry Jagtap, Sharayu
2015
55 9-10 p. 1537-1541
5 p.
artikel
48 Destruction failure analysis and international reliability test standard for power devices Setoya, Takashi
2015
55 9-10 p. 1932-1937
6 p.
artikel
49 Die crack failure mechanism investigations depending on the time of failure Zirilli, T.
2015
55 9-10 p. 1600-1606
7 p.
artikel
50 Dielectric charging effects in floating electrode MEMS capacitive switches Michalas, L.
2015
55 9-10 p. 1891-1895
5 p.
artikel
51 3D simulation of single-event-transient effects in symmetrical dual-material double-gate MOSFETs Munteanu, D.
2015
55 9-10 p. 1522-1526
5 p.
artikel
52 Dynamical IMC-growth calculation Meinshausen, L.
2015
55 9-10 p. 1832-1837
6 p.
artikel
53 Editorial Bafleur, Marise
2015
55 9-10 p. 1269-1270
2 p.
artikel
54 Editorial Board 2015
55 9-10 p. IFC-
1 p.
artikel
55 Effect of source and drain asymmetry on hot carrier degradation in vertical nanowire MOSFETs Lee, Jae Hoon
2015
55 9-10 p. 1456-1459
4 p.
artikel
56 Effect of thermal aging on the electrical resistivity of Fe-added SAC105 solder alloys Sabri, M.F.M.
2015
55 9-10 p. 1882-1885
4 p.
artikel
57 Effects of buffer compensation strategies on the electrical performance and RF reliability of AlGaN/GaN HEMTs Bisi, D.
2015
55 9-10 p. 1662-1666
5 p.
artikel
58 Effects of constant voltage and constant current stress in PCBM:P3HT solar cells Cester, A.
2015
55 9-10 p. 1795-1799
5 p.
artikel
59 Effects of thermal and electrical stress on DH4T-based organic thin-film-transistors with PMMA gate dielectrics Wrachien, N.
2015
55 9-10 p. 1790-1794
5 p.
artikel
60 Effects of thermal cycling on aluminum metallization of power diodes Brincker, M.
2015
55 9-10 p. 1988-1991
4 p.
artikel
61 Electrical characterization of multiple leakage current paths in HfO2/Al2O3-based nanolaminates Rodríguez, A.
2015
55 9-10 p. 1442-1445
4 p.
artikel
62 Electrical model of an inverter body-biased structure in triple-well technology under pulsed photoelectric laser stimulation Borrel, N.
2015
55 9-10 p. 1592-1599
8 p.
artikel
63 Electronic counterfeit detection based on the measurement of electromagnetic fingerprint Huang, H.
2015
55 9-10 p. 2050-2054
5 p.
artikel
64 Energy monitoring of high dose ion implantation in semiconductors via photocurrent measurement Eichenseer, C.
2015
55 9-10 p. 1369-1372
4 p.
artikel
65 Entropy-based sensor selection for condition monitoring and prognostics of aircraft engine Liu, Liansheng
2015
55 9-10 p. 2092-2096
5 p.
artikel
66 Envelope probability and EFAST-based sensitivity analysis method for electronic prognostic uncertainty quantification Sun, Bo
2015
55 9-10 p. 1384-1390
7 p.
artikel
67 ESD characterization of multi-finger RF nMOSFET transistors by TLP and transient interferometric mapping technique Rigato, Matteo
2015
55 9-10 p. 1471-1475
5 p.
artikel
68 Evidence of chlorine ion penetration in InP/InAsP quantum well structures during dry etching processes and effects of induced-defects on the electronic and structural behaviour Landesman, J.P.
2015
55 9-10 p. 1750-1753
4 p.
artikel
69 Experimental and comparative study of gamma radiation effects on Si-IGBT and SiC-JFET Tala-Ighil, B.
2015
55 9-10 p. 1512-1516
5 p.
artikel
70 Experimental investigation on the evolution of a conducted-EMI buck converter after thermal aging tests of the MOSFET Douzi, S.
2015
55 9-10 p. 1391-1394
4 p.
artikel
71 Experimental study of Single Event Effects induced by heavy ion irradiation in enhancement mode GaN power HEMT Abbate, C.
2015
55 9-10 p. 1496-1500
5 p.
artikel
72 Exploiting reliable features of asynchronous circuits for designing low-voltage components in FD-SOI technology Rolloff, Otto Aureliano
2015
55 9-10 p. 1302-1306
5 p.
artikel
73 Exploring the use of approximate TMR to mask transient faults in logic with low area overhead Gomes, Iuri A.C.
2015
55 9-10 p. 2072-2076
5 p.
artikel
74 Fabrication of advanced probes for atomic force microscopy using focused ion beam Ageev, O.A.
2015
55 9-10 p. 2131-2134
4 p.
artikel
75 Failure analysis and reliability on system level Jacob, P.
2015
55 9-10 p. 2154-2158
5 p.
artikel
76 Failure analysis of ESD-stressed SiC MESFET Phulpin, T.
2015
55 9-10 p. 1542-1548
7 p.
artikel
77 Failure analysis of power devices based on real-time monitoring Watanabe, A.
2015
55 9-10 p. 2032-2035
4 p.
artikel
78 Failure analysis on recovering low resistive via in mixed-mode device Castignolles, M.
2015
55 9-10 p. 1574-1578
5 p.
artikel
79 Failure causes and mechanisms of retrofit LED lamps De Santi, C.
2015
55 9-10 p. 1765-1769
5 p.
artikel
80 Failure mechanisms of microbolometer thermal imager sensors using chip-scale packaging Elßner, Michael
2015
55 9-10 p. 1901-1905
5 p.
artikel
81 Failure mechanism study and immunity modeling of an embedded analog-to-digital converter based on immunity measurements Ayed, A.
2015
55 9-10 p. 2067-2071
5 p.
artikel
82 Failures on DC–DC modules following a change of wire bonding material from gold to copper Belfort, Y.
2015
55 9-10 p. 2003-2006
4 p.
artikel
83 Fault isolation in a case study of failure analysis on Metal–Insulator–Metal capacitor structures Giuffrida, V.
2015
55 9-10 p. 1640-1643
4 p.
artikel
84 Focused high- and low-energy ion milling for TEM specimen preparation Lotnyk, A.
2015
55 9-10 p. 2119-2125
7 p.
artikel
85 Formation of coupled-cavities in quantum cascade lasers using focused ion beam milling Czerwinski, Andrzej
2015
55 9-10 p. 2142-2146
5 p.
artikel
86 General linearized model use for High Power Reliability Assessment test results: Conditions, procedure and case study Bergès, C.
2015
55 9-10 p. 1346-1350
5 p.
artikel
87 High-resolution X-ray computed tomography of through silicon vias for RF MEMS integrated passive device applications de Veen, P.J.
2015
55 9-10 p. 1644-1648
5 p.
artikel
88 High temperature performances of normally-off p-GaN gate AlGaN/GaN HEMTs on SiC and Si substrates for power applications Fleury, Clément
2015
55 9-10 p. 1687-1691
5 p.
artikel
89 High temperature pulsed-gate robustness testing of SiC power MOSFETs Fayyaz, A.
2015
55 9-10 p. 1724-1728
5 p.
artikel
90 High-throughput and full automatic DBC-module screening tester for high power IGBT Tsukuda, M.
2015
55 9-10 p. 1363-1368
6 p.
artikel
91 Identification and analysis of power substrates degradations subjected to severe aging tests Woirgard, E.
2015
55 9-10 p. 1961-1965
5 p.
artikel
92 Impact of aluminum wire and ribbon bonding technologies on D2PAK package reliability during thermal cycling applications Jacques, S.
2015
55 9-10 p. 1821-1825
5 p.
artikel
93 Impact of dynamic voltage scaling and thermal factors on SRAM reliability Rosa, F.R.
2015
55 9-10 p. 1486-1490
5 p.
artikel
94 Impact of gate insulator on the dc and dynamic performance of AlGaN/GaN MIS-HEMTs Rossetto, I.
2015
55 9-10 p. 1692-1696
5 p.
artikel
95 Impact of hot carrier injection on switching time evolution for power RF LDMOS after accelerated tests Belaïd, M.A.
2015
55 9-10 p. 2041-2044
4 p.
artikel
96 Impact of PVT variability on 20nm FinFET standard cells Zimpeck, A.L.
2015
55 9-10 p. 1379-1383
5 p.
artikel
97 Impacts of plasma process-induced damage on MOSFET parameter variability and reliability Eriguchi, Koji
2015
55 9-10 p. 1464-1470
7 p.
artikel
98 Improvement of MOSFET matching characterization with calibrated multiplexed test structure Welter, L.
2015
55 9-10 p. 1328-1333
6 p.
artikel
99 Improvement of signal to noise ratio in electro optical probing technique by wavelets filtering Boscaro, A.
2015
55 9-10 p. 1585-1591
7 p.
artikel
100 In-depth investigation of metallization aging in power MOSFETs Ruffilli, R.
2015
55 9-10 p. 1966-1970
5 p.
artikel
101 Induced charging phenomena on SiNx dielectric films used in RF MEMS capacitive switches Koutsoureli, M.
2015
55 9-10 p. 1911-1915
5 p.
artikel
102 Integrated vehicle health management: An approach to dealing with lifetime prediction considerations on relays Wileman, Andrew J.
2015
55 9-10 p. 2165-2171
7 p.
artikel
103 Intrinsic stress analysis of tungsten-lined open TSVs Filipovic, Lado
2015
55 9-10 p. 1843-1848
6 p.
artikel
104 Investigation of the dynamic on-state resistance of AlGaN/GaN HEMTs Rzin, M.
2015
55 9-10 p. 1672-1676
5 p.
artikel
105 Investigation on stress induced hump phenomenon in IGZO thin film transistors under negative bias stress and illumination Kim, Dae Hyun
2015
55 9-10 p. 1811-1814
4 p.
artikel
106 Investigation on the effect of external mechanical stress on the DC characteristics of GaAs microwave devices Adokanou, K.
2015
55 9-10 p. 1697-1702
6 p.
artikel
107 Investigations on electro-optical and thermal performances degradation of high power density GaAs-based laser diode in vacuum environment Michaud, J.
2015
55 9-10 p. 1746-1749
4 p.
artikel
108 Junction temperature estimation method for a 600V, 30A IGBT module during converter operation Choi, U.M.
2015
55 9-10 p. 2022-2026
5 p.
artikel
109 Latent gate oxide defects case studies Goxe, J.
2015
55 9-10 p. 1607-1610
4 p.
artikel
110 Life time comparison of LED package and the self-ballasted LED lamps by simple linear regression analysis Yoon, Y.G.
2015
55 9-10 p. 1779-1783
5 p.
artikel
111 Lifetime estimation of high-temperature high-voltage polymer film capacitor based on capacitance loss Makdessi, M.
2015
55 9-10 p. 2012-2016
5 p.
artikel
112 Long-term degradation mechanisms of mid-power LEDs for lighting applications Buffolo, M.
2015
55 9-10 p. 1754-1758
5 p.
artikel
113 Low magnetic field Impact on NBTI degradation Merah, S.M.
2015
55 9-10 p. 1460-1463
4 p.
artikel
114 Magnetic imaging for resistive, capacitive and inductive devices; from theory to piezo actuator failure localization Courjault, N.
2015
55 9-10 p. 1622-1627
6 p.
artikel
115 Mechanical stress investigation after technological process in Deep Trench Termination DT2 using BenzoCycloButene as dielectric material Arbess, H.
2015
55 9-10 p. 2017-2021
5 p.
artikel
116 Metal fatigue in copper pillar Flip Chip BGA: A refined acceleration model for the aluminium pad cracking failure mechanism Alberti, R.
2015
55 9-10 p. 1838-1842
5 p.
artikel
117 Modelling the impact of refinishing processes on COTS components for use in aerospace applications Stoyanov, S.
2015
55 9-10 p. 1271-1279
9 p.
artikel
118 Moisture absorption and desorption in wafer level chip scale packages Rongen, K.
2015
55 9-10 p. 1872-1876
5 p.
artikel
119 Nitrogen-Vacancy centers in diamond for current imaging at the redistributive layer level of Integrated Circuits Nowodzinski, A.
2015
55 9-10 p. 1549-1553
5 p.
artikel
120 Numerical analysis and experimental tests for solder joints power cycling optimization Cova, P.
2015
55 9-10 p. 2036-2040
5 p.
artikel
121 Online test method of FPGA solder joint resistance with low power consumption Wang, Nantian
2015
55 9-10 p. 1867-1871
5 p.
artikel
122 Optimization of a MOS–IGBT–SCR ESD protection component in smart power SOI technology Arbess, H.
2015
55 9-10 p. 1476-1480
5 p.
artikel
123 Parallel algorithm for finding modules of large-scale coherent fault trees Li, Z.F.
2015
55 9-10 p. 1400-1403
4 p.
artikel
124 Particle filter approach to lifetime prediction for microelectronic devices and systems with multiple failure mechanisms Raghavan, Nagarajan
2015
55 9-10 p. 1297-1301
5 p.
artikel
125 Photothermal activated failure mechanism in polymer-based packaging of low power InGaN/GaN MQW LED under active storage Baillot, Raphael
2015
55 9-10 p. 1759-1764
6 p.
artikel
126 Physically-based extraction methodology for accurate MOSFET degradation assessment Torrente, Giulio
2015
55 9-10 p. 1417-1421
5 p.
artikel
127 Plasma FIB: Enlarge your field of view and your field of applications Garnier, A.
2015
55 9-10 p. 2135-2141
7 p.
artikel
128 Power modules die attach: A comprehensive evolution of the nanosilver sintering physical properties versus its porosity Youssef, T.
2015
55 9-10 p. 1997-2002
6 p.
artikel
129 Prediction of proton cross sections for SEU in SRAMs and SDRAMs using the METIS engineer tool Weulersse, C.
2015
55 9-10 p. 1491-1495
5 p.
artikel
130 Preliminary failure-mode characterization of emerging direct-lead-bonding power module. Comparison with standard wire-bonding interconnection Sanfins, W.
2015
55 9-10 p. 1956-1960
5 p.
artikel
131 Probabilistic insight to possibility of new metal filament nucleation during repeated cycling of conducting bridge memory Raghavan, Nagarajan
2015
55 9-10 p. 1412-1416
5 p.
artikel
132 Purpose, potential and realization of chip-attached micro-pin fin heat sinks Conrad, M.
2015
55 9-10 p. 1992-1996
5 p.
artikel
133 Radiation and COTS at ground level Autran, J.L.
2015
55 9-10 p. 2147-2153
7 p.
artikel
134 Radiation-induced single event transients modeling and testing on nanometric flash-based technologies Sterpone, L.
2015
55 9-10 p. 2087-2091
5 p.
artikel
135 Reliability modeling and analysis of flicker noise for pore structure in amorphous chalcogenide-based phase-change memory devices Lim, Jun Yeong
2015
55 9-10 p. 1320-1322
3 p.
artikel
136 Reliability odometer for real-time and in situ lifetime measurement of power devices Ciappa, Mauro
2015
55 9-10 p. 1351-1356
6 p.
artikel
137 Reliability of high-speed SiGe:C HBT under electrical stress close to the SOA limit Jacquet, T.
2015
55 9-10 p. 1433-1437
5 p.
artikel
138 Reliability of platinum electrodes and heating elements on SiO2 insulation layers and membranes Rusanov, R.
2015
55 9-10 p. 1920-1925
6 p.
artikel
139 Reliability studies of vertical GaN devices based on bulk GaN substrates Kizilyalli, Isik C.
2015
55 9-10 p. 1654-1661
8 p.
artikel
140 Reliability test of a RF MEMS varactor based on a double actuation mechanism Cazzorla, A.
2015
55 9-10 p. 1906-1910
5 p.
artikel
141 RF-driving of acoustic-optical tunable filters; design, realization and qualification of analog and digital modules for ESA Vanhamel, J.
2015
55 9-10 p. 2103-2107
5 p.
artikel
142 RF functional-based complete FA flow Fudoli, A.
2015
55 9-10 p. 1579-1584
6 p.
artikel
143 Robust design of thermo-mechanical MEMS switch embedded in aluminium BEOL interconnect Orellana, S.
2015
55 9-10 p. 1896-1900
5 p.
artikel
144 Robustness of MW-Level IGBT modules against gate oscillations under short circuit events Reigosa, P.D.
2015
55 9-10 p. 1950-1955
6 p.
artikel
145 Robust prognostics for state of health estimation of lithium-ion batteries based on an improved PSO–SVR model Qin, Taichun
2015
55 9-10 p. 1280-1284
5 p.
artikel
146 Ruggedness of 1200V SiC MPS diodes Fichtner, S.
2015
55 9-10 p. 1677-1681
5 p.
artikel
147 Scanning acoustic GHz-microscopy versus conventional SAM for advanced assessment of ball bond and metal interfaces in microelectronic devices Vogg, G.
2015
55 9-10 p. 1554-1558
5 p.
artikel
148 SEU sensitivity of Junctionless Single-Gate SOI MOSFETs-based 6T SRAM cells investigated by 3D TCAD simulation Munteanu, D.
2015
55 9-10 p. 1501-1505
5 p.
artikel
149 ShadowStack: A new approach for secure program execution Ferreira, Raphael Segabinazzi
2015
55 9-10 p. 2077-2081
5 p.
artikel
150 Statistics of retention failure in the low resistance state for hafnium oxide RRAM using a Kinetic Monte Carlo approach Raghavan, Nagarajan
2015
55 9-10 p. 1422-1426
5 p.
artikel
151 Step-stress accelerated testing of high-power LED lamps based on subsystem isolation method Cai, Miao
2015
55 9-10 p. 1784-1789
6 p.
artikel
152 Study of short-circuit robustness of SiC MOSFETs, analysis of the failure modes and comparison with BJTs Chen, Cheng
2015
55 9-10 p. 1708-1713
6 p.
artikel
153 Study on specific effects of high frequency ripple currents and temperature on supercapacitors ageing German, R.
2015
55 9-10 p. 2027-2031
5 p.
artikel
154 System-level variation-aware aging simulator using a unified novel gate-delay model for bias temperature instability, hot carrier injection, and gate oxide breakdown Liu, Taizhi
2015
55 9-10 p. 1334-1340
7 p.
artikel
155 TCAD simulation of current filamentation in adjacent IGBT cells under turn-on and turn-off short circuit condition Suzuki, Hiroshi
2015
55 9-10 p. 1976-1980
5 p.
artikel
156 TEM sample preparation of a SEM cross section using electron beam induced deposition of carbon Ricci, E.
2015
55 9-10 p. 2126-2130
5 p.
artikel
157 Test setup for reliability studies of DDR2 SDRAM Versen, M.
2015
55 9-10 p. 1395-1399
5 p.
artikel
158 The degradation mechanism of flexible a-Si:H/μc-Si:H photovoltaic modules Jeong, Jae-Seong
2015
55 9-10 p. 1804-1810
7 p.
artikel
159 The die-to-die calibrated combined model of negative bias temperature instability and gate oxide breakdown from device to system Cha, Soonyoung
2015
55 9-10 p. 1404-1411
8 p.
artikel
160 The effect of iron and bismuth addition on the microstructural, mechanical, and thermal properties of Sn–1Ag–0.5Cu solder alloy Mahdavifard, M.H.
2015
55 9-10 p. 1886-1890
5 p.
artikel
161 Thermal cycle reliability of Cu-nanoparticle joint Ishizaki, T.
2015
55 9-10 p. 1861-1866
6 p.
artikel
162 Thermomechanical modeling and simulation of a silicone gel for power electronic devices Haussener, M.
2015
55 9-10 p. 2045-2049
5 p.
artikel
163 Thermoreflectance mapping observation of Power MOSFET under UIS avalanche breakdown condition Endo, Koichi
2015
55 9-10 p. 1628-1633
6 p.
artikel
164 Top-down delayering to expose large inspection area on die side-edge with Platinum (Pt) deposition technique Yap, H.H.
2015
55 9-10 p. 1611-1616
6 p.
artikel
165 Ultra wide voltage range consideration of reliability-aware STT magnetic flip-flop in 28nm FDSOI technology Cai, H.
2015
55 9-10 p. 1323-1327
5 p.
artikel
166 Unsupervised learning for signal mapping in dynamic photon emission Chef, S.
2015
55 9-10 p. 1564-1568
5 p.
artikel
167 Unusual defects, generated by wafer sawing: An update, including pick&place processing Jacob, P.
2015
55 9-10 p. 1826-1831
6 p.
artikel
168 Upscreening of LED COTS for space science applications Kiryukhina, K.
2015
55 9-10 p. 1770-1774
5 p.
artikel
169 Use of a silicon drift detector for cathodoluminescence detection Béranger, M.
2015
55 9-10 p. 1569-1573
5 p.
artikel
170 Virtual prototyping in a Design-for-Reliability approach Barnat, Samed
2015
55 9-10 p. 1849-1854
6 p.
artikel
171 Wire width dependence of hot carrier degradation in silicon nanowire gate-all-around MOSFETs Choi, Jin Hyung
2015
55 9-10 p. 1438-1441
4 p.
artikel
                             171 gevonden resultaten
 
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