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                             133 results found
no title author magazine year volume issue page(s) type
1 Access resistor modelling for EEPROM’s retention test vehicle Canet, P.
 2013
 53 9-11 p. 1218-1223
6 p.
 article
2 A comparative study on device degradation under a positive gate stress and hot carrier stress in InGaZnO thin film transistors Jang, Hyun Jun
 2013
 53 9-11 p. 1814-1817
4 p.
 article
3 A defect-tolerant area-efficient multiplexer for basic blocks in SRAM-based FPGAs Ben Dhia, A.
 2013
 53 9-11 p. 1189-1193
5 p.
 article
4 A low-cost built-in error correction circuit design for STT-MRAM reliability improvement Kang, Wang
 2013
 53 9-11 p. 1224-1229
6 p.
 article
5 Analysis of Schottky gate degradation evolution in AlGaN/GaN HEMTs during HTRB stress Brunel, L.
 2013
 53 9-11 p. 1450-1455
6 p.
 article
6 Analysis of the UIS behavior of power devices by means of SPICE-based electrothermal simulations d’Alessandro, Vincenzo
 2013
 53 9-11 p. 1713-1718
6 p.
 article
7 Analysis of ultracapacitors ageing in automotive application Catelani, M.
 2013
 53 9-11 p. 1676-1680
5 p.
 article
8 A new two-dimensional TCAD model for threshold instability in silicon carbide MOSFETs Kikuchi, Takuo
 2013
 53 9-11 p. 1730-1734
5 p.
 article
9 A nonlinear degradation path dependent end-of-life estimation framework from noisy observations Cucu Laurenciu, N.
 2013
 53 9-11 p. 1213-1217
5 p.
 article
10 A novel method to measure the internal pressure of MEMS thin-film packages Wang, B.
 2013
 53 9-11 p. 1663-1666
4 p.
 article
11 A novel soldering method to evaluate PCB pad cratering for pin-pull testing Cai, M.
 2013
 53 9-11 p. 1568-1574
7 p.
 article
12 A novel test structure for OxRRAM process variability evaluation Aziza, H.
 2013
 53 9-11 p. 1208-1212
5 p.
 article
13 Application of quantitative modal analysis for investigation of thermal degradation of microelectronic packages Rafiee, P.
 2013
 53 9-11 p. 1563-1567
5 p.
 article
14 Approach of a physically based lifetime model for solder layers in power modules Steinhorst, P.
 2013
 53 9-11 p. 1199-1202
4 p.
 article
15 Avoiding misleading artefacts in metallurgical preparation of die attach solder joints in high power modules Dugal, Franc
 2013
 53 9-11 p. 1403-1408
6 p.
 article
16 Benefits of field failure distribution modeling to the failure analysis Bergès, C.
 2013
 53 9-11 p. 1194-1198
5 p.
 article
17 Bidirectional electromigration failure Lim, M.K.
 2013
 53 9-11 p. 1261-1265
5 p.
 article
18 Breakdown mechanisms in MgO based magnetic tunnel junctions and correlation with low frequency noise Amara-Dababi, S.
 2013
 53 9-11 p. 1239-1242
4 p.
 article
19 BTI and HCI first-order aging estimation for early use in standard cell technology mapping Butzen, P.F.
 2013
 53 9-11 p. 1360-1364
5 p.
 article
20 BTI, HCI and TDDB aging impact in flip–flops Nunes, Cícero
 2013
 53 9-11 p. 1355-1359
5 p.
 article
21 Characterization and modeling of laser-induced single-event burn-out in SiC power diodes Mbaye, N.
 2013
 53 9-11 p. 1315-1319
5 p.
 article
22 Comparison between positive and negative constant current stress on dye-sensitized solar cells Bari, D.
 2013
 53 9-11 p. 1804-1808
5 p.
 article
23 Comparison of the performances of an InAlN/GaN HEMT with a Mo/Au gate or a Ni/Pt/Au gate Rossetto, I.
 2013
 53 9-11 p. 1476-1480
5 p.
 article
24 Conclusion of the accelerated stress conditions affecting phosphor-converted LEDs using the fractional factorial design method Yoon, Y.G.
 2013
 53 9-11 p. 1519-1523
5 p.
 article
25 Conducted and radiated EMI evolution of power RF N-LDMOS after accelerated ageing tests Tlig, M.
 2013
 53 9-11 p. 1793-1797
5 p.
 article
26 Conductive adhesive joint for extreme temperature applications Jullien, J.B.
 2013
 53 9-11 p. 1597-1601
5 p.
 article
27 Contoured device sample preparation technique for ±5μm remaining silicon thicknesses that meets solid immersion lens requirements Richardson, Chris
 2013
 53 9-11 p. 1434-1438
5 p.
 article
28 Defect signatures in degraded high power laser diodes Hortelano, V.
 2013
 53 9-11 p. 1501-1505
5 p.
 article
29 Design issues of a thin-film p-channel SOI power MOSFET for high-temperature applications Yoshimura, Masayuki
 2013
 53 9-11 p. 1778-1782
5 p.
 article
30 Detectability of automotive power MOSFET on-resistance failure at high current induced by Wafer Fab process excursion Weber, Y.
 2013
 53 9-11 p. 1393-1398
6 p.
 article
31 Direct observation of the generation of breakdown spots in MIM structures under constant voltage stress Saura, X.
 2013
 53 9-11 p. 1257-1260
4 p.
 article
32 Distributed electro-thermal model of IGBT chip – Application to top-metal ageing effects in short circuit conditions Moussodji, J.
 2013
 53 9-11 p. 1725-1729
5 p.
 article
33 Durability study of a fluorescent optical memory in glass studied by luminescence spectroscopy Royon, A.
 2013
 53 9-11 p. 1514-1518
5 p.
 article
34 Dynamic Near-Field Scanning Thermal Microscopy on thin films Heiderhoff, R.
 2013
 53 9-11 p. 1413-1417
5 p.
 article
35 Dynamic simulation of migration induced failure mechanism in integrated circuit interconnects Moujbani, Aymen
 2013
 53 9-11 p. 1365-1369
5 p.
 article
36 Dynamic simulation of octahedron slotted metal structures Kludt, J.
 2013
 53 9-11 p. 1606-1610
5 p.
 article
37 Editorial Labat, Nathalie
 2013
 53 9-11 p. 1169-1170
2 p.
 article
38 Effective and reliable heat management for power devices exposed to cyclic short overload pulses Nelhiebel, M.
 2013
 53 9-11 p. 1745-1749
5 p.
 article
39 Effect of moisture swelling on MEMS packaging and integrated sensors Keller, J.
 2013
 53 9-11 p. 1648-1654
7 p.
 article
40 Effect of negative bias temperature instability induced by a low stress voltage on nanoscale high-k/metal gate pMOSFETs Lee, Seonhaeng
 2013
 53 9-11 p. 1351-1354
4 p.
 article
41 Effects of constant voltage stress on p- and n-type organic thin film transistors with poly(methyl methacrylate) gate dielectric Wrachien, N.
 2013
 53 9-11 p. 1798-1803
6 p.
 article
42 Electrical behavior of Au–Ge eutectic solder under aging for solder bump application in high temperature Electronics Lau, F.L.
 2013
 53 9-11 p. 1581-1586
6 p.
 article
43 Electrical characterization under mechanical stress at various temperatures of PiN power diodes in a health monitoring approach Baccar, F.
 2013
 53 9-11 p. 1719-1724
6 p.
 article
44 Electrical modeling of the photoelectric effect induced by a pulsed laser applied to an SRAM cell Sarafianos, A.
 2013
 53 9-11 p. 1300-1305
6 p.
 article
45 Electro- and thermomigration-induced IMC formation in SnAg3.0Cu0.5 solder joints on nickel gold pads Meinshausen, L.
 2013
 53 9-11 p. 1575-1580
6 p.
 article
46 Embedded packaging and assembly; Reliability and supply chain implications Bauer, Charles E.
 2013
 53 9-11 p. 1179-1182
4 p.
 article
47 ESD characterization of multi-chip RGB LEDs Vaccari, S.
 2013
 53 9-11 p. 1510-1513
4 p.
 article
48 Estimation of power MOSFET junction temperature during avalanche mode: Experimental tests and modelling Azoui, T.
 2013
 53 9-11 p. 1750-1754
5 p.
 article
49 Evaluation of thermal balancing techniques in InGaP/GaAs HBT power arrays for wireless handset power amplifiers Metzger, A.G.
 2013
 53 9-11 p. 1471-1475
5 p.
 article
50 Experimental analysis of electro-thermal instability in SiC Power MOSFETs Riccio, M.
 2013
 53 9-11 p. 1739-1744
6 p.
 article
51 Experimental and analytical study of geometry effects on the fatigue life of Al bond wire interconnects Czerny, B.
 2013
 53 9-11 p. 1558-1562
5 p.
 article
52 Experimental investigation of Zener diode reliability under pulsed Electrical Overstress (EOS) Zhu, F.
 2013
 53 9-11 p. 1288-1292
5 p.
 article
53 Extending the lifetime of power electronic assemblies by increased cooling temperatures Hutzler, Aaron
 2013
 53 9-11 p. 1774-1777
4 p.
 article
54 Failure analysis and detection methodology for capacitive RF-MEMS switches based on BEOL BiCMOS process Torres Matabosch, N.
 2013
 53 9-11 p. 1659-1662
4 p.
 article
55 Failure analysis of GaAs microwave devices with plastic encapsulation by electro-optical techniques Ben Naceur, W.
 2013
 53 9-11 p. 1375-1380
6 p.
 article
56 Failure analysis techniques for a 3D world Henderson, Christopher L.
 2013
 53 9-11 p. 1171-1178
8 p.
 article
57 Failure causes generating aluminium protrusion/extrusion Jacob, Peter
 2013
 53 9-11 p. 1553-1557
5 p.
 article
58 Fatigue life evaluation of aluminum bonding wire in silicone gel under random vibration testing Sasaki, K.
 2013
 53 9-11 p. 1766-1770
5 p.
 article
59 Field-effect control of breakdown paths in HfO2 based MIM structures Saura, X.
 2013
 53 9-11 p. 1346-1350
5 p.
 article
60 Field failure mechanism and reproduction due to moisture for low-voltage ZnO varistors Jeong, Jae-Seong
 2013
 53 9-11 p. 1632-1637
6 p.
 article
61 Finite element modeling and characterization of lead-free solder joints fatigue life during power cycling of surface mounting power devices Delmonte, N.
 2013
 53 9-11 p. 1611-1616
6 p.
 article
62 Frequency mapping in dynamic light emission with wavelet transform Chef, S.
 2013
 53 9-11 p. 1387-1392
6 p.
 article
63 GaAs P-HEMT MMIC processes behavior under multiple heavy ion radiation stress conditions combined with DC and RF biasing Bensoussan, A.
 2013
 53 9-11 p. 1466-1470
5 p.
 article
64 High optical strength GaAs-based laser structures Bettiati, Mauro A.
 2013
 53 9-11 p. 1496-1500
5 p.
 article
65 High temperature gate-bias and reverse-bias tests on SiC MOSFETs Yang, L.
 2013
 53 9-11 p. 1771-1773
3 p.
 article
66 “Hot-plugging” of LED modules: Electrical characterization and device degradation Dal Lago, M.
 2013
 53 9-11 p. 1524-1528
5 p.
 article
67 IGBT chip current imaging system by scanning local magnetic field Shiratsuchi, Hiroaki
 2013
 53 9-11 p. 1409-1412
4 p.
 article
68 Impact of back gate biases on hot carrier effects in multiple gate junctionless transistors Lee, Seung Min
 2013
 53 9-11 p. 1329-1332
4 p.
 article
69 Impact of field-plate geometry on the reliability of GaN-on-SiC HEMTs Chini, A.
 2013
 53 9-11 p. 1461-1465
5 p.
 article
70 Impact of high frequency current ripple on supercapacitors ageing through floating ageing tests German, R.
 2013
 53 9-11 p. 1643-1647
5 p.
 article
71 Impact of load pulse duration on power cycling lifetime of Al wire bonds Scheuermann, U.
 2013
 53 9-11 p. 1687-1691
5 p.
 article
72 Impact of NBTI/PBTIon SRAMs within microprocessor systems: Modeling, simulation, and analysis Chen, Chang-Chih
 2013
 53 9-11 p. 1183-1188
6 p.
 article
73 Impact of negative bias temperature instability on the single-event upset threshold of a 65nm SRAM cell El Moukhtari, I.
 2013
 53 9-11 p. 1325-1328
4 p.
 article
74 Impact of the forming conditions and electrode metals on read disturb in HfO2-based RRAM Lorenzi, P.
 2013
 53 9-11 p. 1203-1207
5 p.
 article
75 Improved bending fatigue life of single crystal silicon micro-beam by phosphorus doping Tao, Jun-Yong
 2013
 53 9-11 p. 1667-1671
5 p.
 article
76 Influence of copper on the diffusion length of the minority carriers in devices based on n-type Si/SiO2 Kolkovsky, Vl.
 2013
 53 9-11 p. 1342-1345
4 p.
 article
77 Influence of gate leakage current on AlGaN/GaN HEMTs evidenced by low frequency noise and pulsed electrical measurements Karboyan, S.
 2013
 53 9-11 p. 1491-1495
5 p.
 article
78 Influence of the clamping pressure on the electrical, thermal and mechanical behaviour of press-pack IGBTs Poller, T.
 2013
 53 9-11 p. 1755-1759
5 p.
 article
79 Influence of the interface trap location on the performance and variability of ultra-scaled MOSFETs Velayudhan, V.
 2013
 53 9-11 p. 1243-1246
4 p.
 article
80 Inside front cover - Editorial board 2013
 53 9-11 p. IFC-
1 p.
 article
81 LDO regulator DC characteristic and susceptibility prediction after electrical stress ageing Wu, J.
 2013
 53 9-11 p. 1273-1277
5 p.
 article
82 Long-term Electro-Magnetic Robustness of Integrated Circuits: EMRIC research project Ben Dhia, S.
 2013
 53 9-11 p. 1266-1272
7 p.
 article
83 MEMS packaging reliability assessment: Residual Gas Analysis of gaseous species trapped inside MEMS cavities Charvet, P.-L.
 2013
 53 9-11 p. 1622-1627
6 p.
 article
84 Methodology for improvement of data retention in floating gate flash memory using leakage current estimation Moon, Pyung
 2013
 53 9-11 p. 1338-1341
4 p.
 article
85 2MeV electron irradiation effects on the electrical characteristics of MOS capacitors with ALD Al2O3 dielectrics of different thickness Rafí, J.M.
 2013
 53 9-11 p. 1333-1337
5 p.
 article
86 Micro-sectioning approach for quality and reliability assessment of wire bonding interfaces in IGBT modules Pedersen, Kristian Bonderup
 2013
 53 9-11 p. 1422-1426
5 p.
 article
87 Migration issues in sintered-silver die attaches operating at high temperature Riva, R.
 2013
 53 9-11 p. 1592-1596
5 p.
 article
88 Modeling dose effects in electronics devices: Dose and temperature dependence of power MOSFET Michez, A.
 2013
 53 9-11 p. 1306-1310
5 p.
 article
89 Observation of impurity diffusion defect in IGBT using a laser terahertz emission microscope technique Goto, Yasunori
 2013
 53 9-11 p. 1370-1374
5 p.
 article
90 On-chip circuit to monitor long-term NBTI and PBTI degradation Jenkins, Keith A.
 2013
 53 9-11 p. 1252-1256
5 p.
 article
91 On-chip measurement to analyze failure mechanisms of ICs under system level ESD stress Caigneť, F.
 2013
 53 9-11 p. 1278-1283
6 p.
 article
92 Opens localization on silicon level in a Chip Scale Package using space domain reflectometry Gaudestad, J.
 2013
 53 9-11 p. 1418-1421
4 p.
 article
93 Optical losses in single-mode laser diodes Vanzi, M.
 2013
 53 9-11 p. 1529-1533
5 p.
 article
94 Overview of catastrophic failures of freewheeling diodes in power electronic circuits Wu, R.
 2013
 53 9-11 p. 1788-1792
5 p.
 article
95 Physically based analytical model of the blocking I–V curve of Trench IGBTs Maresca, L.
 2013
 53 9-11 p. 1783-1787
5 p.
 article
96 Power MOSFET active power cycling for medical system reliability assessment Sow, Amadou
 2013
 53 9-11 p. 1697-1702
6 p.
 article
97 Properties of contactless and contacted charging in MEMS capacitive switches Koutsoureli, M.
 2013
 53 9-11 p. 1655-1658
4 p.
 article
98 Qualification of 50V GaN on SiC technology for RF power amplifiers Wel, P.J. van der
 2013
 53 9-11 p. 1439-1443
5 p.
 article
99 Real time degradation monitoring system for high power IGBT module under power cycling test Watanabe, Akihiko
 2013
 53 9-11 p. 1692-1696
5 p.
 article
100 Reliability improvement of automotive electronics based on environmental stress screen methodology Chan, S.I.
 2013
 53 9-11 p. 1235-1238
4 p.
 article
101 Reliability of power MOSFET-based smart switches under normal and extreme conditions for 24V battery system applications Rostaing, G.
 2013
 53 9-11 p. 1703-1706
4 p.
 article
102 Repairing bonding wire connections using a microsoldering unit inside an SEM Rummel, Andreas
 2013
 53 9-11 p. 1427-1429
3 p.
 article
103 Resistive switching like-behavior in MOSFETs with ultra-thin HfSiON dielectric gate stack: pMOS and nMOS comparison and reliability implications Crespo-Yepes, A.
 2013
 53 9-11 p. 1247-1251
5 p.
 article
104 Reverse-bias stress of high electron mobility transistors: Correlation between leakage current, current collapse and trap characteristics Rossetto, I.
 2013
 53 9-11 p. 1456-1460
5 p.
 article
105 Robustness of 1.2kV SiC MOSFET devices Othman, D.
 2013
 53 9-11 p. 1735-1738
4 p.
 article
106 Saint-Venant’s principle and the minimum length of a dual-coated optical fiber specimen in reliability (proof) testing Suhir, E.
 2013
 53 9-11 p. 1506-1509
4 p.
 article
107 Scanning probe microscopy based electrical characterization of thin dielectric and organic semiconductor films Hofer, Alexander
 2013
 53 9-11 p. 1430-1433
4 p.
 article
108 Scattering parameter approach applied to the stability analysis of power IGBTs in short circuit Abbate, C.
 2013
 53 9-11 p. 1707-1712
6 p.
 article
109 SEL-UP: A CAD tool for the sensitivity analysis of radiation-induced Single Event Latch-Up Sterpone, L.
 2013
 53 9-11 p. 1311-1314
4 p.
 article
110 Sensitivity tuning of a bulk built-in current sensor for optimal transient-fault detection Dutertre, J.M.
 2013
 53 9-11 p. 1320-1324
5 p.
 article
111 SNaP: A novel hybrid method for circuit reliability assessment under multiple faults Pagliarini, S.N.
 2013
 53 9-11 p. 1230-1234
5 p.
 article
112 Solder joint reliability under realistic service conditions Borgesen, P.
 2013
 53 9-11 p. 1587-1591
5 p.
 article
113 Statistics and localisation of vertical breakdown in AlGaN/GaN HEMTs on SiC and Si substrates for power applications Fleury, Clément
 2013
 53 9-11 p. 1444-1449
6 p.
 article
114 Stress evolution in the metal layers of TSVs with Bosch scallops Singulani, A.P.
 2013
 53 9-11 p. 1602-1605
4 p.
 article
115 Study of die attach technologies for high temperature power electronics: Silver sintering and gold–germanium alloy Sabbah, Wissam
 2013
 53 9-11 p. 1617-1621
5 p.
 article
116 Supercapacitors aging diagnosis using least square algorithm Oukaour, A.
 2013
 53 9-11 p. 1638-1642
5 p.
 article
117 Surface roughness effect on copper–alumina adhesion Lim, Ju Dy
 2013
 53 9-11 p. 1548-1552
5 p.
 article
118 Symmetrical ESD protection for advanced CMOS technology dedicated to 100GHz RF application Galy, Ph.
 2013
 53 9-11 p. 1284-1287
4 p.
 article
119 Temperature-dependent reverse-bias stress of normally-off GaN power FETs Giuliani, F.
 2013
 53 9-11 p. 1486-1490
5 p.
 article
120 The effect of encapsulant discoloration and delamination on the electrical characteristics of photovoltaic module Park, N.C.
 2013
 53 9-11 p. 1818-1822
5 p.
 article
121 The effect of moisture on the degradation mechanism of multi-crystalline silicon photovoltaic module Kim, T.H.
 2013
 53 9-11 p. 1823-1827
5 p.
 article
122 The effect of water on the mechanical properties of native oxide coated silicon structure in MEMS Zhang, Yun-An
 2013
 53 9-11 p. 1672-1675
4 p.
 article
123 Thermal and electrical investigation of the reverse bias degradation of silicon solar cells Compagnin, Alessandro
 2013
 53 9-11 p. 1809-1813
5 p.
 article
124 Thermal characterizations of Cu nanoparticle joints for power semiconductor devices Ishizaki, T.
 2013
 53 9-11 p. 1543-1547
5 p.
 article
125 Thermal cycling impacts on supercapacitor performances during calendar ageing Ayadi, M.
 2013
 53 9-11 p. 1628-1631
4 p.
 article
126 Thermal instability during short circuit of normally-off AlGaN/GaN HFETs Abbate, C.
 2013
 53 9-11 p. 1481-1485
5 p.
 article
127 Thermal optimization of water heat sink for power converters with tight thermal constraints Cova, P.
 2013
 53 9-11 p. 1760-1765
6 p.
 article
128 The role of the optical trans-characteristics in laser diode analysis Mura, G.
 2013
 53 9-11 p. 1538-1542
5 p.
 article
129 Transient device simulation of neutron-induced failure in IGBT: A first step for developing a compact predictive model Guetarni, K.
 2013
 53 9-11 p. 1293-1299
7 p.
 article
130 Trends in automotive power semiconductor packaging Dietrich, Peter
 2013
 53 9-11 p. 1681-1686
6 p.
 article
131 Unstructured tetrahedric meshes for the description of complex three-dimensional sample geometries in Monte Carlo simulation of scanning electron microscopy images for metrology applications Ilgünsatiroglu, Emre
 2013
 53 9-11 p. 1381-1386
6 p.
 article
132 Variations in junction capacitance and doping activation associated with electrical stress of InGaN/GaN laser diodes de Santi, C.
 2013
 53 9-11 p. 1534-1537
4 p.
 article
133 XEBIC at the Dual Beam Vanzi, M.
 2013
 53 9-11 p. 1399-1402
4 p.
 article
                             133 results found
 
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