| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Access resistor modelling for EEPROM’s retention test vehicle
|
Canet, P.
|
|
2013
|
53 |
9-11 |
p. 1218-1223
6 p.
|
artikel
|
| 2 |
A comparative study on device degradation under a positive gate stress and hot carrier stress in InGaZnO thin film transistors
|
Jang, Hyun Jun
|
|
2013
|
53 |
9-11 |
p. 1814-1817
4 p.
|
artikel
|
| 3 |
A defect-tolerant area-efficient multiplexer for basic blocks in SRAM-based FPGAs
|
Ben Dhia, A.
|
|
2013
|
53 |
9-11 |
p. 1189-1193
5 p.
|
artikel
|
| 4 |
A low-cost built-in error correction circuit design for STT-MRAM reliability improvement
|
Kang, Wang
|
|
2013
|
53 |
9-11 |
p. 1224-1229
6 p.
|
artikel
|
| 5 |
Analysis of Schottky gate degradation evolution in AlGaN/GaN HEMTs during HTRB stress
|
Brunel, L.
|
|
2013
|
53 |
9-11 |
p. 1450-1455
6 p.
|
artikel
|
| 6 |
Analysis of the UIS behavior of power devices by means of SPICE-based electrothermal simulations
|
d’Alessandro, Vincenzo
|
|
2013
|
53 |
9-11 |
p. 1713-1718
6 p.
|
artikel
|
| 7 |
Analysis of ultracapacitors ageing in automotive application
|
Catelani, M.
|
|
2013
|
53 |
9-11 |
p. 1676-1680
5 p.
|
artikel
|
| 8 |
A new two-dimensional TCAD model for threshold instability in silicon carbide MOSFETs
|
Kikuchi, Takuo
|
|
2013
|
53 |
9-11 |
p. 1730-1734
5 p.
|
artikel
|
| 9 |
A nonlinear degradation path dependent end-of-life estimation framework from noisy observations
|
Cucu Laurenciu, N.
|
|
2013
|
53 |
9-11 |
p. 1213-1217
5 p.
|
artikel
|
| 10 |
A novel method to measure the internal pressure of MEMS thin-film packages
|
Wang, B.
|
|
2013
|
53 |
9-11 |
p. 1663-1666
4 p.
|
artikel
|
| 11 |
A novel soldering method to evaluate PCB pad cratering for pin-pull testing
|
Cai, M.
|
|
2013
|
53 |
9-11 |
p. 1568-1574
7 p.
|
artikel
|
| 12 |
A novel test structure for OxRRAM process variability evaluation
|
Aziza, H.
|
|
2013
|
53 |
9-11 |
p. 1208-1212
5 p.
|
artikel
|
| 13 |
Application of quantitative modal analysis for investigation of thermal degradation of microelectronic packages
|
Rafiee, P.
|
|
2013
|
53 |
9-11 |
p. 1563-1567
5 p.
|
artikel
|
| 14 |
Approach of a physically based lifetime model for solder layers in power modules
|
Steinhorst, P.
|
|
2013
|
53 |
9-11 |
p. 1199-1202
4 p.
|
artikel
|
| 15 |
Avoiding misleading artefacts in metallurgical preparation of die attach solder joints in high power modules
|
Dugal, Franc
|
|
2013
|
53 |
9-11 |
p. 1403-1408
6 p.
|
artikel
|
| 16 |
Benefits of field failure distribution modeling to the failure analysis
|
Bergès, C.
|
|
2013
|
53 |
9-11 |
p. 1194-1198
5 p.
|
artikel
|
| 17 |
Bidirectional electromigration failure
|
Lim, M.K.
|
|
2013
|
53 |
9-11 |
p. 1261-1265
5 p.
|
artikel
|
| 18 |
Breakdown mechanisms in MgO based magnetic tunnel junctions and correlation with low frequency noise
|
Amara-Dababi, S.
|
|
2013
|
53 |
9-11 |
p. 1239-1242
4 p.
|
artikel
|
| 19 |
BTI and HCI first-order aging estimation for early use in standard cell technology mapping
|
Butzen, P.F.
|
|
2013
|
53 |
9-11 |
p. 1360-1364
5 p.
|
artikel
|
| 20 |
BTI, HCI and TDDB aging impact in flip–flops
|
Nunes, Cícero
|
|
2013
|
53 |
9-11 |
p. 1355-1359
5 p.
|
artikel
|
| 21 |
Characterization and modeling of laser-induced single-event burn-out in SiC power diodes
|
Mbaye, N.
|
|
2013
|
53 |
9-11 |
p. 1315-1319
5 p.
|
artikel
|
| 22 |
Comparison between positive and negative constant current stress on dye-sensitized solar cells
|
Bari, D.
|
|
2013
|
53 |
9-11 |
p. 1804-1808
5 p.
|
artikel
|
| 23 |
Comparison of the performances of an InAlN/GaN HEMT with a Mo/Au gate or a Ni/Pt/Au gate
|
Rossetto, I.
|
|
2013
|
53 |
9-11 |
p. 1476-1480
5 p.
|
artikel
|
| 24 |
Conclusion of the accelerated stress conditions affecting phosphor-converted LEDs using the fractional factorial design method
|
Yoon, Y.G.
|
|
2013
|
53 |
9-11 |
p. 1519-1523
5 p.
|
artikel
|
| 25 |
Conducted and radiated EMI evolution of power RF N-LDMOS after accelerated ageing tests
|
Tlig, M.
|
|
2013
|
53 |
9-11 |
p. 1793-1797
5 p.
|
artikel
|
| 26 |
Conductive adhesive joint for extreme temperature applications
|
Jullien, J.B.
|
|
2013
|
53 |
9-11 |
p. 1597-1601
5 p.
|
artikel
|
| 27 |
Contoured device sample preparation technique for ±5μm remaining silicon thicknesses that meets solid immersion lens requirements
|
Richardson, Chris
|
|
2013
|
53 |
9-11 |
p. 1434-1438
5 p.
|
artikel
|
| 28 |
Defect signatures in degraded high power laser diodes
|
Hortelano, V.
|
|
2013
|
53 |
9-11 |
p. 1501-1505
5 p.
|
artikel
|
| 29 |
Design issues of a thin-film p-channel SOI power MOSFET for high-temperature applications
|
Yoshimura, Masayuki
|
|
2013
|
53 |
9-11 |
p. 1778-1782
5 p.
|
artikel
|
| 30 |
Detectability of automotive power MOSFET on-resistance failure at high current induced by Wafer Fab process excursion
|
Weber, Y.
|
|
2013
|
53 |
9-11 |
p. 1393-1398
6 p.
|
artikel
|
| 31 |
Direct observation of the generation of breakdown spots in MIM structures under constant voltage stress
|
Saura, X.
|
|
2013
|
53 |
9-11 |
p. 1257-1260
4 p.
|
artikel
|
| 32 |
Distributed electro-thermal model of IGBT chip – Application to top-metal ageing effects in short circuit conditions
|
Moussodji, J.
|
|
2013
|
53 |
9-11 |
p. 1725-1729
5 p.
|
artikel
|
| 33 |
Durability study of a fluorescent optical memory in glass studied by luminescence spectroscopy
|
Royon, A.
|
|
2013
|
53 |
9-11 |
p. 1514-1518
5 p.
|
artikel
|
| 34 |
Dynamic Near-Field Scanning Thermal Microscopy on thin films
|
Heiderhoff, R.
|
|
2013
|
53 |
9-11 |
p. 1413-1417
5 p.
|
artikel
|
| 35 |
Dynamic simulation of migration induced failure mechanism in integrated circuit interconnects
|
Moujbani, Aymen
|
|
2013
|
53 |
9-11 |
p. 1365-1369
5 p.
|
artikel
|
| 36 |
Dynamic simulation of octahedron slotted metal structures
|
Kludt, J.
|
|
2013
|
53 |
9-11 |
p. 1606-1610
5 p.
|
artikel
|
| 37 |
Editorial
|
Labat, Nathalie
|
|
2013
|
53 |
9-11 |
p. 1169-1170
2 p.
|
artikel
|
| 38 |
Effective and reliable heat management for power devices exposed to cyclic short overload pulses
|
Nelhiebel, M.
|
|
2013
|
53 |
9-11 |
p. 1745-1749
5 p.
|
artikel
|
| 39 |
Effect of moisture swelling on MEMS packaging and integrated sensors
|
Keller, J.
|
|
2013
|
53 |
9-11 |
p. 1648-1654
7 p.
|
artikel
|
| 40 |
Effect of negative bias temperature instability induced by a low stress voltage on nanoscale high-k/metal gate pMOSFETs
|
Lee, Seonhaeng
|
|
2013
|
53 |
9-11 |
p. 1351-1354
4 p.
|
artikel
|
| 41 |
Effects of constant voltage stress on p- and n-type organic thin film transistors with poly(methyl methacrylate) gate dielectric
|
Wrachien, N.
|
|
2013
|
53 |
9-11 |
p. 1798-1803
6 p.
|
artikel
|
| 42 |
Electrical behavior of Au–Ge eutectic solder under aging for solder bump application in high temperature Electronics
|
Lau, F.L.
|
|
2013
|
53 |
9-11 |
p. 1581-1586
6 p.
|
artikel
|
| 43 |
Electrical characterization under mechanical stress at various temperatures of PiN power diodes in a health monitoring approach
|
Baccar, F.
|
|
2013
|
53 |
9-11 |
p. 1719-1724
6 p.
|
artikel
|
| 44 |
Electrical modeling of the photoelectric effect induced by a pulsed laser applied to an SRAM cell
|
Sarafianos, A.
|
|
2013
|
53 |
9-11 |
p. 1300-1305
6 p.
|
artikel
|
| 45 |
Electro- and thermomigration-induced IMC formation in SnAg3.0Cu0.5 solder joints on nickel gold pads
|
Meinshausen, L.
|
|
2013
|
53 |
9-11 |
p. 1575-1580
6 p.
|
artikel
|
| 46 |
Embedded packaging and assembly; Reliability and supply chain implications
|
Bauer, Charles E.
|
|
2013
|
53 |
9-11 |
p. 1179-1182
4 p.
|
artikel
|
| 47 |
ESD characterization of multi-chip RGB LEDs
|
Vaccari, S.
|
|
2013
|
53 |
9-11 |
p. 1510-1513
4 p.
|
artikel
|
| 48 |
Estimation of power MOSFET junction temperature during avalanche mode: Experimental tests and modelling
|
Azoui, T.
|
|
2013
|
53 |
9-11 |
p. 1750-1754
5 p.
|
artikel
|
| 49 |
Evaluation of thermal balancing techniques in InGaP/GaAs HBT power arrays for wireless handset power amplifiers
|
Metzger, A.G.
|
|
2013
|
53 |
9-11 |
p. 1471-1475
5 p.
|
artikel
|
| 50 |
Experimental analysis of electro-thermal instability in SiC Power MOSFETs
|
Riccio, M.
|
|
2013
|
53 |
9-11 |
p. 1739-1744
6 p.
|
artikel
|
| 51 |
Experimental and analytical study of geometry effects on the fatigue life of Al bond wire interconnects
|
Czerny, B.
|
|
2013
|
53 |
9-11 |
p. 1558-1562
5 p.
|
artikel
|
| 52 |
Experimental investigation of Zener diode reliability under pulsed Electrical Overstress (EOS)
|
Zhu, F.
|
|
2013
|
53 |
9-11 |
p. 1288-1292
5 p.
|
artikel
|
| 53 |
Extending the lifetime of power electronic assemblies by increased cooling temperatures
|
Hutzler, Aaron
|
|
2013
|
53 |
9-11 |
p. 1774-1777
4 p.
|
artikel
|
| 54 |
Failure analysis and detection methodology for capacitive RF-MEMS switches based on BEOL BiCMOS process
|
Torres Matabosch, N.
|
|
2013
|
53 |
9-11 |
p. 1659-1662
4 p.
|
artikel
|
| 55 |
Failure analysis of GaAs microwave devices with plastic encapsulation by electro-optical techniques
|
Ben Naceur, W.
|
|
2013
|
53 |
9-11 |
p. 1375-1380
6 p.
|
artikel
|
| 56 |
Failure analysis techniques for a 3D world
|
Henderson, Christopher L.
|
|
2013
|
53 |
9-11 |
p. 1171-1178
8 p.
|
artikel
|
| 57 |
Failure causes generating aluminium protrusion/extrusion
|
Jacob, Peter
|
|
2013
|
53 |
9-11 |
p. 1553-1557
5 p.
|
artikel
|
| 58 |
Fatigue life evaluation of aluminum bonding wire in silicone gel under random vibration testing
|
Sasaki, K.
|
|
2013
|
53 |
9-11 |
p. 1766-1770
5 p.
|
artikel
|
| 59 |
Field-effect control of breakdown paths in HfO2 based MIM structures
|
Saura, X.
|
|
2013
|
53 |
9-11 |
p. 1346-1350
5 p.
|
artikel
|
| 60 |
Field failure mechanism and reproduction due to moisture for low-voltage ZnO varistors
|
Jeong, Jae-Seong
|
|
2013
|
53 |
9-11 |
p. 1632-1637
6 p.
|
artikel
|
| 61 |
Finite element modeling and characterization of lead-free solder joints fatigue life during power cycling of surface mounting power devices
|
Delmonte, N.
|
|
2013
|
53 |
9-11 |
p. 1611-1616
6 p.
|
artikel
|
| 62 |
Frequency mapping in dynamic light emission with wavelet transform
|
Chef, S.
|
|
2013
|
53 |
9-11 |
p. 1387-1392
6 p.
|
artikel
|
| 63 |
GaAs P-HEMT MMIC processes behavior under multiple heavy ion radiation stress conditions combined with DC and RF biasing
|
Bensoussan, A.
|
|
2013
|
53 |
9-11 |
p. 1466-1470
5 p.
|
artikel
|
| 64 |
High optical strength GaAs-based laser structures
|
Bettiati, Mauro A.
|
|
2013
|
53 |
9-11 |
p. 1496-1500
5 p.
|
artikel
|
| 65 |
High temperature gate-bias and reverse-bias tests on SiC MOSFETs
|
Yang, L.
|
|
2013
|
53 |
9-11 |
p. 1771-1773
3 p.
|
artikel
|
| 66 |
“Hot-plugging” of LED modules: Electrical characterization and device degradation
|
Dal Lago, M.
|
|
2013
|
53 |
9-11 |
p. 1524-1528
5 p.
|
artikel
|
| 67 |
IGBT chip current imaging system by scanning local magnetic field
|
Shiratsuchi, Hiroaki
|
|
2013
|
53 |
9-11 |
p. 1409-1412
4 p.
|
artikel
|
| 68 |
Impact of back gate biases on hot carrier effects in multiple gate junctionless transistors
|
Lee, Seung Min
|
|
2013
|
53 |
9-11 |
p. 1329-1332
4 p.
|
artikel
|
| 69 |
Impact of field-plate geometry on the reliability of GaN-on-SiC HEMTs
|
Chini, A.
|
|
2013
|
53 |
9-11 |
p. 1461-1465
5 p.
|
artikel
|
| 70 |
Impact of high frequency current ripple on supercapacitors ageing through floating ageing tests
|
German, R.
|
|
2013
|
53 |
9-11 |
p. 1643-1647
5 p.
|
artikel
|
| 71 |
Impact of load pulse duration on power cycling lifetime of Al wire bonds
|
Scheuermann, U.
|
|
2013
|
53 |
9-11 |
p. 1687-1691
5 p.
|
artikel
|
| 72 |
Impact of NBTI/PBTIon SRAMs within microprocessor systems: Modeling, simulation, and analysis
|
Chen, Chang-Chih
|
|
2013
|
53 |
9-11 |
p. 1183-1188
6 p.
|
artikel
|
| 73 |
Impact of negative bias temperature instability on the single-event upset threshold of a 65nm SRAM cell
|
El Moukhtari, I.
|
|
2013
|
53 |
9-11 |
p. 1325-1328
4 p.
|
artikel
|
| 74 |
Impact of the forming conditions and electrode metals on read disturb in HfO2-based RRAM
|
Lorenzi, P.
|
|
2013
|
53 |
9-11 |
p. 1203-1207
5 p.
|
artikel
|
| 75 |
Improved bending fatigue life of single crystal silicon micro-beam by phosphorus doping
|
Tao, Jun-Yong
|
|
2013
|
53 |
9-11 |
p. 1667-1671
5 p.
|
artikel
|
| 76 |
Influence of copper on the diffusion length of the minority carriers in devices based on n-type Si/SiO2
|
Kolkovsky, Vl.
|
|
2013
|
53 |
9-11 |
p. 1342-1345
4 p.
|
artikel
|
| 77 |
Influence of gate leakage current on AlGaN/GaN HEMTs evidenced by low frequency noise and pulsed electrical measurements
|
Karboyan, S.
|
|
2013
|
53 |
9-11 |
p. 1491-1495
5 p.
|
artikel
|
| 78 |
Influence of the clamping pressure on the electrical, thermal and mechanical behaviour of press-pack IGBTs
|
Poller, T.
|
|
2013
|
53 |
9-11 |
p. 1755-1759
5 p.
|
artikel
|
| 79 |
Influence of the interface trap location on the performance and variability of ultra-scaled MOSFETs
|
Velayudhan, V.
|
|
2013
|
53 |
9-11 |
p. 1243-1246
4 p.
|
artikel
|
| 80 |
Inside front cover - Editorial board
|
|
|
2013
|
53 |
9-11 |
p. IFC-
1 p.
|
artikel
|
| 81 |
LDO regulator DC characteristic and susceptibility prediction after electrical stress ageing
|
Wu, J.
|
|
2013
|
53 |
9-11 |
p. 1273-1277
5 p.
|
artikel
|
| 82 |
Long-term Electro-Magnetic Robustness of Integrated Circuits: EMRIC research project
|
Ben Dhia, S.
|
|
2013
|
53 |
9-11 |
p. 1266-1272
7 p.
|
artikel
|
| 83 |
MEMS packaging reliability assessment: Residual Gas Analysis of gaseous species trapped inside MEMS cavities
|
Charvet, P.-L.
|
|
2013
|
53 |
9-11 |
p. 1622-1627
6 p.
|
artikel
|
| 84 |
Methodology for improvement of data retention in floating gate flash memory using leakage current estimation
|
Moon, Pyung
|
|
2013
|
53 |
9-11 |
p. 1338-1341
4 p.
|
artikel
|
| 85 |
2MeV electron irradiation effects on the electrical characteristics of MOS capacitors with ALD Al2O3 dielectrics of different thickness
|
Rafí, J.M.
|
|
2013
|
53 |
9-11 |
p. 1333-1337
5 p.
|
artikel
|
| 86 |
Micro-sectioning approach for quality and reliability assessment of wire bonding interfaces in IGBT modules
|
Pedersen, Kristian Bonderup
|
|
2013
|
53 |
9-11 |
p. 1422-1426
5 p.
|
artikel
|
| 87 |
Migration issues in sintered-silver die attaches operating at high temperature
|
Riva, R.
|
|
2013
|
53 |
9-11 |
p. 1592-1596
5 p.
|
artikel
|
| 88 |
Modeling dose effects in electronics devices: Dose and temperature dependence of power MOSFET
|
Michez, A.
|
|
2013
|
53 |
9-11 |
p. 1306-1310
5 p.
|
artikel
|
| 89 |
Observation of impurity diffusion defect in IGBT using a laser terahertz emission microscope technique
|
Goto, Yasunori
|
|
2013
|
53 |
9-11 |
p. 1370-1374
5 p.
|
artikel
|
| 90 |
On-chip circuit to monitor long-term NBTI and PBTI degradation
|
Jenkins, Keith A.
|
|
2013
|
53 |
9-11 |
p. 1252-1256
5 p.
|
artikel
|
| 91 |
On-chip measurement to analyze failure mechanisms of ICs under system level ESD stress
|
Caigneť, F.
|
|
2013
|
53 |
9-11 |
p. 1278-1283
6 p.
|
artikel
|
| 92 |
Opens localization on silicon level in a Chip Scale Package using space domain reflectometry
|
Gaudestad, J.
|
|
2013
|
53 |
9-11 |
p. 1418-1421
4 p.
|
artikel
|
| 93 |
Optical losses in single-mode laser diodes
|
Vanzi, M.
|
|
2013
|
53 |
9-11 |
p. 1529-1533
5 p.
|
artikel
|
| 94 |
Overview of catastrophic failures of freewheeling diodes in power electronic circuits
|
Wu, R.
|
|
2013
|
53 |
9-11 |
p. 1788-1792
5 p.
|
artikel
|
| 95 |
Physically based analytical model of the blocking I–V curve of Trench IGBTs
|
Maresca, L.
|
|
2013
|
53 |
9-11 |
p. 1783-1787
5 p.
|
artikel
|
| 96 |
Power MOSFET active power cycling for medical system reliability assessment
|
Sow, Amadou
|
|
2013
|
53 |
9-11 |
p. 1697-1702
6 p.
|
artikel
|
| 97 |
Properties of contactless and contacted charging in MEMS capacitive switches
|
Koutsoureli, M.
|
|
2013
|
53 |
9-11 |
p. 1655-1658
4 p.
|
artikel
|
| 98 |
Qualification of 50V GaN on SiC technology for RF power amplifiers
|
Wel, P.J. van der
|
|
2013
|
53 |
9-11 |
p. 1439-1443
5 p.
|
artikel
|
| 99 |
Real time degradation monitoring system for high power IGBT module under power cycling test
|
Watanabe, Akihiko
|
|
2013
|
53 |
9-11 |
p. 1692-1696
5 p.
|
artikel
|
| 100 |
Reliability improvement of automotive electronics based on environmental stress screen methodology
|
Chan, S.I.
|
|
2013
|
53 |
9-11 |
p. 1235-1238
4 p.
|
artikel
|
| 101 |
Reliability of power MOSFET-based smart switches under normal and extreme conditions for 24V battery system applications
|
Rostaing, G.
|
|
2013
|
53 |
9-11 |
p. 1703-1706
4 p.
|
artikel
|
| 102 |
Repairing bonding wire connections using a microsoldering unit inside an SEM
|
Rummel, Andreas
|
|
2013
|
53 |
9-11 |
p. 1427-1429
3 p.
|
artikel
|
| 103 |
Resistive switching like-behavior in MOSFETs with ultra-thin HfSiON dielectric gate stack: pMOS and nMOS comparison and reliability implications
|
Crespo-Yepes, A.
|
|
2013
|
53 |
9-11 |
p. 1247-1251
5 p.
|
artikel
|
| 104 |
Reverse-bias stress of high electron mobility transistors: Correlation between leakage current, current collapse and trap characteristics
|
Rossetto, I.
|
|
2013
|
53 |
9-11 |
p. 1456-1460
5 p.
|
artikel
|
| 105 |
Robustness of 1.2kV SiC MOSFET devices
|
Othman, D.
|
|
2013
|
53 |
9-11 |
p. 1735-1738
4 p.
|
artikel
|
| 106 |
Saint-Venant’s principle and the minimum length of a dual-coated optical fiber specimen in reliability (proof) testing
|
Suhir, E.
|
|
2013
|
53 |
9-11 |
p. 1506-1509
4 p.
|
artikel
|
| 107 |
Scanning probe microscopy based electrical characterization of thin dielectric and organic semiconductor films
|
Hofer, Alexander
|
|
2013
|
53 |
9-11 |
p. 1430-1433
4 p.
|
artikel
|
| 108 |
Scattering parameter approach applied to the stability analysis of power IGBTs in short circuit
|
Abbate, C.
|
|
2013
|
53 |
9-11 |
p. 1707-1712
6 p.
|
artikel
|
| 109 |
SEL-UP: A CAD tool for the sensitivity analysis of radiation-induced Single Event Latch-Up
|
Sterpone, L.
|
|
2013
|
53 |
9-11 |
p. 1311-1314
4 p.
|
artikel
|
| 110 |
Sensitivity tuning of a bulk built-in current sensor for optimal transient-fault detection
|
Dutertre, J.M.
|
|
2013
|
53 |
9-11 |
p. 1320-1324
5 p.
|
artikel
|
| 111 |
SNaP: A novel hybrid method for circuit reliability assessment under multiple faults
|
Pagliarini, S.N.
|
|
2013
|
53 |
9-11 |
p. 1230-1234
5 p.
|
artikel
|
| 112 |
Solder joint reliability under realistic service conditions
|
Borgesen, P.
|
|
2013
|
53 |
9-11 |
p. 1587-1591
5 p.
|
artikel
|
| 113 |
Statistics and localisation of vertical breakdown in AlGaN/GaN HEMTs on SiC and Si substrates for power applications
|
Fleury, Clément
|
|
2013
|
53 |
9-11 |
p. 1444-1449
6 p.
|
artikel
|
| 114 |
Stress evolution in the metal layers of TSVs with Bosch scallops
|
Singulani, A.P.
|
|
2013
|
53 |
9-11 |
p. 1602-1605
4 p.
|
artikel
|
| 115 |
Study of die attach technologies for high temperature power electronics: Silver sintering and gold–germanium alloy
|
Sabbah, Wissam
|
|
2013
|
53 |
9-11 |
p. 1617-1621
5 p.
|
artikel
|
| 116 |
Supercapacitors aging diagnosis using least square algorithm
|
Oukaour, A.
|
|
2013
|
53 |
9-11 |
p. 1638-1642
5 p.
|
artikel
|
| 117 |
Surface roughness effect on copper–alumina adhesion
|
Lim, Ju Dy
|
|
2013
|
53 |
9-11 |
p. 1548-1552
5 p.
|
artikel
|
| 118 |
Symmetrical ESD protection for advanced CMOS technology dedicated to 100GHz RF application
|
Galy, Ph.
|
|
2013
|
53 |
9-11 |
p. 1284-1287
4 p.
|
artikel
|
| 119 |
Temperature-dependent reverse-bias stress of normally-off GaN power FETs
|
Giuliani, F.
|
|
2013
|
53 |
9-11 |
p. 1486-1490
5 p.
|
artikel
|
| 120 |
The effect of encapsulant discoloration and delamination on the electrical characteristics of photovoltaic module
|
Park, N.C.
|
|
2013
|
53 |
9-11 |
p. 1818-1822
5 p.
|
artikel
|
| 121 |
The effect of moisture on the degradation mechanism of multi-crystalline silicon photovoltaic module
|
Kim, T.H.
|
|
2013
|
53 |
9-11 |
p. 1823-1827
5 p.
|
artikel
|
| 122 |
The effect of water on the mechanical properties of native oxide coated silicon structure in MEMS
|
Zhang, Yun-An
|
|
2013
|
53 |
9-11 |
p. 1672-1675
4 p.
|
artikel
|
| 123 |
Thermal and electrical investigation of the reverse bias degradation of silicon solar cells
|
Compagnin, Alessandro
|
|
2013
|
53 |
9-11 |
p. 1809-1813
5 p.
|
artikel
|
| 124 |
Thermal characterizations of Cu nanoparticle joints for power semiconductor devices
|
Ishizaki, T.
|
|
2013
|
53 |
9-11 |
p. 1543-1547
5 p.
|
artikel
|
| 125 |
Thermal cycling impacts on supercapacitor performances during calendar ageing
|
Ayadi, M.
|
|
2013
|
53 |
9-11 |
p. 1628-1631
4 p.
|
artikel
|
| 126 |
Thermal instability during short circuit of normally-off AlGaN/GaN HFETs
|
Abbate, C.
|
|
2013
|
53 |
9-11 |
p. 1481-1485
5 p.
|
artikel
|
| 127 |
Thermal optimization of water heat sink for power converters with tight thermal constraints
|
Cova, P.
|
|
2013
|
53 |
9-11 |
p. 1760-1765
6 p.
|
artikel
|
| 128 |
The role of the optical trans-characteristics in laser diode analysis
|
Mura, G.
|
|
2013
|
53 |
9-11 |
p. 1538-1542
5 p.
|
artikel
|
| 129 |
Transient device simulation of neutron-induced failure in IGBT: A first step for developing a compact predictive model
|
Guetarni, K.
|
|
2013
|
53 |
9-11 |
p. 1293-1299
7 p.
|
artikel
|
| 130 |
Trends in automotive power semiconductor packaging
|
Dietrich, Peter
|
|
2013
|
53 |
9-11 |
p. 1681-1686
6 p.
|
artikel
|
| 131 |
Unstructured tetrahedric meshes for the description of complex three-dimensional sample geometries in Monte Carlo simulation of scanning electron microscopy images for metrology applications
|
Ilgünsatiroglu, Emre
|
|
2013
|
53 |
9-11 |
p. 1381-1386
6 p.
|
artikel
|
| 132 |
Variations in junction capacitance and doping activation associated with electrical stress of InGaN/GaN laser diodes
|
de Santi, C.
|
|
2013
|
53 |
9-11 |
p. 1534-1537
4 p.
|
artikel
|
| 133 |
XEBIC at the Dual Beam
|
Vanzi, M.
|
|
2013
|
53 |
9-11 |
p. 1399-1402
4 p.
|
artikel
|
Tijdschrift beschrijving