| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
An accurate MOSFET aging model for 28nm integrated circuit simulation
|
Tudor, Bogdan
|
|
2012
|
52 |
8 |
p. 1565-1570
6 p.
|
artikel
|
| 2 |
A novel gate-suppression technique for ESD protection
|
Miao, Meng
|
|
2012
|
52 |
8 |
p. 1598-1601
4 p.
|
artikel
|
| 3 |
A novel power-clamp assisted complementary MOSFET for robust ESD protection
|
Wu, Jian
|
|
2012
|
52 |
8 |
p. 1593-1597
5 p.
|
artikel
|
| 4 |
Applications of finite element methods for reliability study of ULSI interconnections
|
Tan, Cher Ming
|
|
2012
|
52 |
8 |
p. 1539-1545
7 p.
|
artikel
|
| 5 |
A study on MIS Schottky diode based hydrogen sensor using La2O3 as gate insulator
|
Chen, Gang
|
|
2012
|
52 |
8 |
p. 1660-1664
5 p.
|
artikel
|
| 6 |
Characterization of the viscoelastic properties of an epoxy molding compound during cure
|
Sadeghinia, M.
|
|
2012
|
52 |
8 |
p. 1711-1718
8 p.
|
artikel
|
| 7 |
Charge storage and data retention characteristics of forming gas-annealed Gd2O3-nanocrystal nonvolatile memory cell
|
Wang, Jer-Chyi
|
|
2012
|
52 |
8 |
p. 1627-1631
5 p.
|
artikel
|
| 8 |
Comparative analysis of yield optimized pulsed flip-flops
|
Lanuzza, Marco
|
|
2012
|
52 |
8 |
p. 1679-1689
11 p.
|
artikel
|
| 9 |
Crystal size and direction dependence of the elastic properties of Cu3Sn through molecular dynamics simulation and nanoindentation testing
|
Chen, Wen-Hwa
|
|
2012
|
52 |
8 |
p. 1699-1710
12 p.
|
artikel
|
| 10 |
Degradation behaviors of GaN light-emitting diodes under high-temperature and high-current stressing
|
Liu, J.
|
|
2012
|
52 |
8 |
p. 1636-1639
4 p.
|
artikel
|
| 11 |
Effect of IC layout on the reliability of CMOS amplifiers
|
He, Feifei
|
|
2012
|
52 |
8 |
p. 1575-1580
6 p.
|
artikel
|
| 12 |
Efficiently analyzing the impact of aging effects on large integrated circuits
|
Lorenz, Dominik
|
|
2012
|
52 |
8 |
p. 1546-1552
7 p.
|
artikel
|
| 13 |
Ensuring accuracy in optical and electrical measurement of ultra-bright LEDs during reliability test
|
Chen, Sihan Joseph
|
|
2012
|
52 |
8 |
p. 1632-1635
4 p.
|
artikel
|
| 14 |
Experimental characterization and modelling of electromigration lifetime under unipolar pulsed current stress
|
Lim, Meng Keong
|
|
2012
|
52 |
8 |
p. 1553-1558
6 p.
|
artikel
|
| 15 |
Fault detection in resistive ladder network with minimal measurements
|
Shashank, S.B.
|
|
2012
|
52 |
8 |
p. 1586-1592
7 p.
|
artikel
|
| 16 |
Fluid–solid coupling thermo-mechanical analysis of high power LED package during thermal shock testing
|
Chen, Zhaohui
|
|
2012
|
52 |
8 |
p. 1726-1734
9 p.
|
artikel
|
| 17 |
ICMAT 2011 – Reliability and variability of semiconductor devices and ICs
|
Asenov, Asen
|
|
2012
|
52 |
8 |
p. 1531-
1 p.
|
artikel
|
| 18 |
Immunity against temperature variability and bias point invariability in double gate tunnel field effect transistor
|
Narang, Rakhi
|
|
2012
|
52 |
8 |
p. 1617-1620
4 p.
|
artikel
|
| 19 |
Impacts of NBTI/PBTI on performance of domino logic circuits with high-k metal-gate devices in nanoscale CMOS
|
Houshmand Kaffashian, Masaoud
|
|
2012
|
52 |
8 |
p. 1655-1659
5 p.
|
artikel
|
| 20 |
Improving the electrical characteristics of MOS transistors with CeO2/La2O3 stacked gate dielectric
|
Yang, B.L.
|
|
2012
|
52 |
8 |
p. 1613-1616
4 p.
|
artikel
|
| 21 |
Including spatial correlations of channel length and threshold voltage variation in circuit simulations
|
Watts, Josef
|
|
2012
|
52 |
8 |
p. 1571-1574
4 p.
|
artikel
|
| 22 |
Influence of multi-finger layout on the subthreshold behavior of nanometer MOS transistors
|
Siu, S.-L.
|
|
2012
|
52 |
8 |
p. 1606-1609
4 p.
|
artikel
|
| 23 |
Inside front cover - Editorial board
|
|
|
2012
|
52 |
8 |
p. IFC-
1 p.
|
artikel
|
| 24 |
Interconnect reliability dependence on fast diffusivity paths
|
Ceric, Hajdin
|
|
2012
|
52 |
8 |
p. 1532-1538
7 p.
|
artikel
|
| 25 |
Investigation of ESD protection strategy in high voltage Bipolar–CMOS–DMOS process
|
Ma, Fei
|
|
2012
|
52 |
8 |
p. 1640-1644
5 p.
|
artikel
|
| 26 |
Modeling of terminal ring structures for high-voltage power MOSFETs
|
Tam, Wing-Shan
|
|
2012
|
52 |
8 |
p. 1645-1650
6 p.
|
artikel
|
| 27 |
Modular sensor chip design for package stress evaluation and reliability characterisation
|
Trigg, A.D.
|
|
2012
|
52 |
8 |
p. 1581-1585
5 p.
|
artikel
|
| 28 |
[No title]
|
Williard, Nicholas
|
|
2012
|
52 |
8 |
p. 1749-
1 p.
|
artikel
|
| 29 |
Optimizing the fabrication process for high performance graphene field effect transistors
|
Wang, Yanjie
|
|
2012
|
52 |
8 |
p. 1602-1605
4 p.
|
artikel
|
| 30 |
pH sensing reliability of flexible ITO/PET electrodes on EGFETs prepared by a roll-to-roll process
|
Lue, Cheng-En
|
|
2012
|
52 |
8 |
p. 1651-1654
4 p.
|
artikel
|
| 31 |
Preliminary assessment of the stability of thin- and polymer thick-film resistors embedded into printed wiring boards
|
Stęplewski, Wojciech
|
|
2012
|
52 |
8 |
p. 1719-1725
7 p.
|
artikel
|
| 32 |
Reliability issues in GaN-based light-emitting diodes: Effect of dc and PWM stress
|
Meneghini, M.
|
|
2012
|
52 |
8 |
p. 1621-1626
6 p.
|
artikel
|
| 33 |
Reliability optimization of analog integrated circuits considering the trade-off between lifetime and area
|
Pan, Xin
|
|
2012
|
52 |
8 |
p. 1559-1564
6 p.
|
artikel
|
| 34 |
Simulation study of Insulated Shallow Extension Silicon On Nothing (ISESON) MOSFET for high temperature applications
|
Kumari, Vandana
|
|
2012
|
52 |
8 |
p. 1610-1612
3 p.
|
artikel
|
| 35 |
Synthesis and characterization of sub-micron sized copper–ruthenium–tantalum composites for interconnection application
|
Sule, R.
|
|
2012
|
52 |
8 |
p. 1690-1698
9 p.
|
artikel
|
| 36 |
System-level design optimization of reliable and low power multiprocessor system-on-chip
|
Shafik, Rishad A.
|
|
2012
|
52 |
8 |
p. 1735-1748
14 p.
|
artikel
|
| 37 |
Thermal fatigue life estimation and delamination mechanics studies of multilayered MEMS structures
|
Maligno, A.R.
|
|
2012
|
52 |
8 |
p. 1665-1678
14 p.
|
artikel
|
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