| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A comparative study of charge pumping circuits for flash memory applications
|
Wong, O.Y.
|
|
2012
|
52 |
4 |
p. 670-687
18 p.
|
artikel
|
| 2 |
Advances in non-volatile memory technology
|
Wong, Hei
|
|
2012
|
52 |
4 |
p. 611-612
2 p.
|
artikel
|
| 3 |
Analysis of thermal characteristics and mechanism of degradation of flip-chip high power LEDs
|
Wang, Chien-Ping
|
|
2012
|
52 |
4 |
p. 698-703
6 p.
|
artikel
|
| 4 |
A novel decapsulation technique for failure analysis of epoxy molded IC packages with Cu wire bonds
|
Liu, Chien-Pan
|
|
2012
|
52 |
4 |
p. 725-734
10 p.
|
artikel
|
| 5 |
Application of flexible printed circuit board (FPCB) in personal computer motherboards: Focusing on mechanical performance
|
Leong, W.C.
|
|
2012
|
52 |
4 |
p. 744-756
13 p.
|
artikel
|
| 6 |
Characterization of fatigued Al lines by means of SThM and XRD: Analysis using fast Fourier transform
|
Szeloch, R.F.
|
|
2012
|
52 |
4 |
p. 711-717
7 p.
|
artikel
|
| 7 |
Chip warpage model for reliability prediction of delamination failures
|
Yang, Se Young
|
|
2012
|
52 |
4 |
p. 718-724
7 p.
|
artikel
|
| 8 |
Doped Ta2O5 and mixed HfO2–Ta2O5 films for dynamic memories applications at the nanoscale
|
Atanassova, E.
|
|
2012
|
52 |
4 |
p. 642-650
9 p.
|
artikel
|
| 9 |
Efficient statistical capacitance extraction of nanometer interconnects considering the on-chip line edge roughness
|
Yu, Wenjian
|
|
2012
|
52 |
4 |
p. 704-710
7 p.
|
artikel
|
| 10 |
Emerging memory technologies: Trends, challenges, and modeling methods
|
Makarov, A.
|
|
2012
|
52 |
4 |
p. 628-634
7 p.
|
artikel
|
| 11 |
Failure mechanism of FBGA solder joints in memory module subjected to harmonic excitation
|
Cinar, Yusuf
|
|
2012
|
52 |
4 |
p. 735-743
9 p.
|
artikel
|
| 12 |
Gadolinium-based metal oxide for nonvolatile memory applications
|
Wang, Jer-Chyi
|
|
2012
|
52 |
4 |
p. 635-641
7 p.
|
artikel
|
| 13 |
Inside front cover - Editorial board
|
|
|
2012
|
52 |
4 |
p. IFC-
1 p.
|
artikel
|
| 14 |
NAND flash memory technology utilizing fringing electric field
|
Lee, Jong-Ho
|
|
2012
|
52 |
4 |
p. 662-669
8 p.
|
artikel
|
| 15 |
Perspective of flash memory realized on vertical Si nanowires
|
Yu, HongYu
|
|
2012
|
52 |
4 |
p. 651-661
11 p.
|
artikel
|
| 16 |
Realizing high breakdown voltage for a novel interface charges islands structure based on partial-SOI substrate
|
Hu, Shengdong
|
|
2012
|
52 |
4 |
p. 692-697
6 p.
|
artikel
|
| 17 |
Resistive switching behavior of a CeO2 based ReRAM cell incorporated with Si buffer layer
|
Dou, C.
|
|
2012
|
52 |
4 |
p. 688-691
4 p.
|
artikel
|
| 18 |
Spin-transfer torque RAM technology: Review and prospect
|
Kawahara, T.
|
|
2012
|
52 |
4 |
p. 613-627
15 p.
|
artikel
|
| 19 |
The influence of ferroelectric–electrode interface layer on the electrical characteristics of negative-capacitance ferroelectric double-gate field-effect transistors
|
Xiao, Yongguang
|
|
2012
|
52 |
4 |
p. 757-760
4 p.
|
artikel
|
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