| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Analysis and synthesis of logical structures on a reliability criterion. A method of synthesis special to sequential logics
|
|
|
1966
|
5 |
2 |
p. 180-
1 p.
|
artikel
|
| 2 |
Analysis of the impurity atom distribution near the diffusion mask for a planar p-n junction
|
|
|
1966
|
5 |
2 |
p. 185-
1 p.
|
artikel
|
| 3 |
An engineered package for microminiature elements
|
|
|
1966
|
5 |
2 |
p. 180-
1 p.
|
artikel
|
| 4 |
A new thin film transmission line
|
|
|
1966
|
5 |
2 |
p. 186-
1 p.
|
artikel
|
| 5 |
Apparatus for the preparation of passive micro-circuits
|
|
|
1966
|
5 |
2 |
p. 186-
1 p.
|
artikel
|
| 6 |
Application of noise measurements to the reliability analysis of semiconductor devices
|
|
|
1966
|
5 |
2 |
p. 179-
1 p.
|
artikel
|
| 7 |
Automatic positioning of device electrodes using the scanning electron microscope
|
|
|
1966
|
5 |
2 |
p. 181-
1 p.
|
artikel
|
| 8 |
A voltage controlled oscillator using a standard integrated circuit
|
|
|
1966
|
5 |
2 |
p. 180-
1 p.
|
artikel
|
| 9 |
Computer simulation and analysis techniques for reliable circuit design
|
Hochwald, W.
|
|
1966
|
5 |
2 |
p. 97-128
32 p.
|
artikel
|
| 10 |
Crystal oscillator using integrated circuit amplifiers
|
|
|
1966
|
5 |
2 |
p. 180-
1 p.
|
artikel
|
| 11 |
Design charts for transient response of thin-film networks
|
|
|
1966
|
5 |
2 |
p. 188-
1 p.
|
artikel
|
| 12 |
Determination of stress in films on single crystalline silicon substrates
|
|
|
1966
|
5 |
2 |
p. 182-
1 p.
|
artikel
|
| 13 |
Dielectric Properties of thin insulating films of photoresist material
|
|
|
1966
|
5 |
2 |
p. 189-
1 p.
|
artikel
|
| 14 |
Electromechanical switching devices—Reliability, life and the relevance of circuit design
|
Leighton, A.G.
|
|
1966
|
5 |
2 |
p. 161-173
13 p.
|
artikel
|
| 15 |
Electronic interconnection at room temperature with gallium alloy
|
|
|
1966
|
5 |
2 |
p. 181-
1 p.
|
artikel
|
| 16 |
Eutectic bonding semiconductor dice to metallized ceramic substrates
|
|
|
1966
|
5 |
2 |
p. 184-185
2 p.
|
artikel
|
| 17 |
Evaporated single element metal film resistors
|
|
|
1966
|
5 |
2 |
p. 188-189
2 p.
|
artikel
|
| 18 |
Formation and properties of oxides on silicon
|
|
|
1966
|
5 |
2 |
p. 182-
1 p.
|
artikel
|
| 19 |
Generation of openings in vacuum deposited SiO diffusion masking films
|
|
|
1966
|
5 |
2 |
p. 185-
1 p.
|
artikel
|
| 20 |
Integrated high figure of merit monolithic thin-film compatible logic circuits for data processing
|
Fuschillo, N.
|
|
1966
|
5 |
2 |
p. 145-148
4 p.
|
artikel
|
| 21 |
Interconnection investigation for a planar packaging concept
|
|
|
1966
|
5 |
2 |
p. 181-
1 p.
|
artikel
|
| 22 |
Ion-beam deposition of metal films
|
|
|
1966
|
5 |
2 |
p. 188-
1 p.
|
artikel
|
| 23 |
Ion trapping and gas release phenomena
|
|
|
1966
|
5 |
2 |
p. 187-
1 p.
|
artikel
|
| 24 |
Lambda and the question of confidence
|
Groocock, J.M.
|
|
1966
|
5 |
2 |
p. 191-192
2 p.
|
artikel
|
| 25 |
Measuring the properties of semiconductor grade materials
|
|
|
1966
|
5 |
2 |
p. 186-
1 p.
|
artikel
|
| 26 |
New developments in semiconductor materials
|
|
|
1966
|
5 |
2 |
p. 186-
1 p.
|
artikel
|
| 27 |
New techniques for reduction of parasitic resistance and capacitance in integrated circuits
|
|
|
1966
|
5 |
2 |
p. 182-
1 p.
|
artikel
|
| 28 |
Next generation in molecular electronics
|
|
|
1966
|
5 |
2 |
p. 181-
1 p.
|
artikel
|
| 29 |
Observations of “clean” surfaces of Si, Ge, and GaAs by low-energy electron diffraction
|
|
|
1966
|
5 |
2 |
p. 184-
1 p.
|
artikel
|
| 30 |
Opto-electric effects in Ge-GaAs p-n heterojunctions
|
|
|
1966
|
5 |
2 |
p. 185-
1 p.
|
artikel
|
| 31 |
Organizing for product reliability
|
|
|
1966
|
5 |
2 |
p. 180-
1 p.
|
artikel
|
| 32 |
Passive and process materials for semiconductor device fabrication
|
|
|
1966
|
5 |
2 |
p. 183-
1 p.
|
artikel
|
| 33 |
P-N Junction electroluminescence and diode lasers
|
|
|
1966
|
5 |
2 |
p. 184-
1 p.
|
artikel
|
| 34 |
“Power off” time impact on reliability estimates
|
|
|
1966
|
5 |
2 |
p. 180-
1 p.
|
artikel
|
| 35 |
Prediction and engineering assessment in early design
|
Cole, W.P.
|
|
1966
|
5 |
2 |
p. 129-144
16 p.
|
artikel
|
| 36 |
Quality and Reliability Assurance from Common National Standards
|
|
|
1966
|
5 |
2 |
p. 179-
1 p.
|
artikel
|
| 37 |
Rare earth oxide dielectrics
|
|
|
1966
|
5 |
2 |
p. 188-
1 p.
|
artikel
|
| 38 |
Relay contact contamination by silicon compounds
|
Coates, D.G.
|
|
1966
|
5 |
2 |
p. 178-IN8
nvt p.
|
artikel
|
| 39 |
Reliability of a system having standby spare plus multiple-repair capability
|
|
|
1966
|
5 |
2 |
p. 179-
1 p.
|
artikel
|
| 40 |
Reliability supervision and improvement in French telecommunication equipment
|
|
|
1966
|
5 |
2 |
p. 179-
1 p.
|
artikel
|
| 41 |
Residual-gas analysis of a DC-705 oil-diffusion-pumped uhv system
|
|
|
1966
|
5 |
2 |
p. 189-
1 p.
|
artikel
|
| 42 |
Resistor tolerances
|
Reiche, H.
|
|
1966
|
5 |
2 |
p. 175-177
3 p.
|
artikel
|
| 43 |
Role of surface states in contributing to p-type carrier concentration of vacuum deposited thin germanium films
|
|
|
1966
|
5 |
2 |
p. 188-
1 p.
|
artikel
|
| 44 |
Sampling choice method with equal producers and consumer's risks
|
|
|
1966
|
5 |
2 |
p. 180-
1 p.
|
artikel
|
| 45 |
Sandwich-type resistors offer space savings
|
|
|
1966
|
5 |
2 |
p. 181-
1 p.
|
artikel
|
| 46 |
Semiconductive properties of molybdenium ditelluride
|
|
|
1966
|
5 |
2 |
p. 184-
1 p.
|
artikel
|
| 47 |
Silicon integrated device theory
|
|
|
1966
|
5 |
2 |
p. 182-
1 p.
|
artikel
|
| 48 |
Simultaneous diffusion of oppositely charged impurities in semiconductors
|
|
|
1966
|
5 |
2 |
p. 183-
1 p.
|
artikel
|
| 49 |
Size dependence of the Hall effect in aluminium films
|
|
|
1966
|
5 |
2 |
p. 187-
1 p.
|
artikel
|
| 50 |
Some practical considerations in the use of low-energy sputtering
|
|
|
1966
|
5 |
2 |
p. 187-
1 p.
|
artikel
|
| 51 |
Specifying resistor reliability
|
|
|
1966
|
5 |
2 |
p. 179-
1 p.
|
artikel
|
| 52 |
Studies of anomalous diffusion of impurities in silicon
|
|
|
1966
|
5 |
2 |
p. 185-
1 p.
|
artikel
|
| 53 |
Surface defects in silicon epitaxial wafers
|
|
|
1966
|
5 |
2 |
p. 183-
1 p.
|
artikel
|
| 54 |
Temperature coefficient of vacuum deposited thin film resistors patterned with abrasive-jet and electron-beam milling
|
|
|
1966
|
5 |
2 |
p. 189-
1 p.
|
artikel
|
| 55 |
Temperature-gradient effects during heat treatments of oxidised silicon
|
|
|
1966
|
5 |
2 |
p. 182-
1 p.
|
artikel
|
| 56 |
The mass spectrographic analysis of a residual atmosphere above silicon-705 in a 6-inch pump
|
|
|
1966
|
5 |
2 |
p. 188-
1 p.
|
artikel
|
| 57 |
Theory of carrier mobility in polar-semiconductors
|
|
|
1966
|
5 |
2 |
p. 184-
1 p.
|
artikel
|
| 58 |
The radio-frequency initiated vapour deposition of glassy layers
|
|
|
1966
|
5 |
2 |
p. 187-
1 p.
|
artikel
|
| 59 |
The realization of monomorphic thin film distributed RC networks
|
|
|
1966
|
5 |
2 |
p. 186-
1 p.
|
artikel
|
| 60 |
Thermal release of gas trapped in sites with a continuum of activation energies
|
|
|
1966
|
5 |
2 |
p. 189-
1 p.
|
artikel
|
| 61 |
Thin films deposited by bias sputtering
|
|
|
1966
|
5 |
2 |
p. 187-
1 p.
|
artikel
|
| 62 |
Thin layer integrated circuits
|
|
|
1966
|
5 |
2 |
p. 186-
1 p.
|
artikel
|
| 63 |
Transient ionizing radiation effects on semiconductor integrated circuits
|
|
|
1966
|
5 |
2 |
p. 183-
1 p.
|
artikel
|
| 64 |
Two-dimensional distribution of carriers in a semiconductor space charge region with current flow
|
|
|
1966
|
5 |
2 |
p. 185-186
2 p.
|
artikel
|
| 65 |
Vacuum leak detection
|
|
|
1966
|
5 |
2 |
p. 187-
1 p.
|
artikel
|
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