nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
A chemical polish method for the preparation of silicon substrates for epitaxial deposition
|
Fairhurst, K.M. |
|
1966 |
5 |
1 |
p. 15-16 2 p. |
artikel |
2 |
Advances in crystal growing technology
|
|
|
1966 |
5 |
1 |
p. 90- 1 p. |
artikel |
3 |
An assessment of the value of triplicated redundancy in digital systems
|
Longden, M. |
|
1966 |
5 |
1 |
p. 39-55 17 p. |
artikel |
4 |
A new approach to the attainment of the highest possible reliability in tantalum capacitors
|
|
|
1966 |
5 |
1 |
p. 85- 1 p. |
artikel |
5 |
Application of the Eyring Model to capacitor aging data
|
|
|
1966 |
5 |
1 |
p. 85-86 2 p. |
artikel |
6 |
A simple method for determining the impurity distribution near a p-n junction
|
|
|
1966 |
5 |
1 |
p. 88- 1 p. |
artikel |
7 |
A study of evaporated nickel chromium films as potentiometer tracks
|
McIntyre, D.A. |
|
1966 |
5 |
1 |
p. 7-8 2 p. |
artikel |
8 |
A study of thermal transpiration using ultrahigh-vacuum techniques
|
|
|
1966 |
5 |
1 |
p. 93-94 2 p. |
artikel |
9 |
Automated epitaxy improves microcircuit uniformity
|
|
|
1966 |
5 |
1 |
p. 90- 1 p. |
artikel |
10 |
Back-up support plates for silicon wafers
|
|
|
1966 |
5 |
1 |
p. 90- 1 p. |
artikel |
11 |
Cathode/heater-insulation failure in oxide-cathode valves
|
|
|
1966 |
5 |
1 |
p. 85- 1 p. |
artikel |
12 |
Cold crucible for the processing of silicon and allied reactive materials
|
|
|
1966 |
5 |
1 |
p. 90- 1 p. |
artikel |
13 |
Controlled phosphorus diffusion into silicon from P2O5 vpaour using a red phosphorous source
|
|
|
1966 |
5 |
1 |
p. 88- 1 p. |
artikel |
14 |
Controlling part dimensions during fabrication and heat treatment
|
|
|
1966 |
5 |
1 |
p. 85- 1 p. |
artikel |
15 |
Cubic β-silicon carbide films on silicon substrates
|
|
|
1966 |
5 |
1 |
p. 88- 1 p. |
artikel |
16 |
Cylindrical geometry sputtering apparatus
|
|
|
1966 |
5 |
1 |
p. 93- 1 p. |
artikel |
17 |
Density of thin evaporated aluminium films
|
|
|
1966 |
5 |
1 |
p. 96- 1 p. |
artikel |
18 |
Design considerations for an integrated low-noise preamplifier
|
|
|
1966 |
5 |
1 |
p. 86-87 2 p. |
artikel |
19 |
Development problems of microelectronic circuits
|
|
|
1966 |
5 |
1 |
p. 86- 1 p. |
artikel |
20 |
Dielectric properties of thin insulating films of photoresist material
|
|
|
1966 |
5 |
1 |
p. 95- 1 p. |
artikel |
21 |
Economic problems connected with the introduction of integrated circuits
|
|
|
1966 |
5 |
1 |
p. 86- 1 p. |
artikel |
22 |
Editorial Board
|
|
|
1966 |
5 |
1 |
p. IFC- 1 p. |
artikel |
23 |
Electron and hole mobilities in inversion layers on thermally oxidized silicon surfaces
|
|
|
1966 |
5 |
1 |
p. 92- 1 p. |
artikel |
24 |
Electron-beam welding
|
|
|
1966 |
5 |
1 |
p. 96- 1 p. |
artikel |
25 |
Electron tunneling in thin films
|
|
|
1966 |
5 |
1 |
p. 95- 1 p. |
artikel |
26 |
Epitaxial deposition of silicon using ultra-thin alloy zone crystallisation
|
Filby, J.D. |
|
1966 |
5 |
1 |
p. 11-12 2 p. |
artikel |
27 |
Evaporation in an evacuated container
|
|
|
1966 |
5 |
1 |
p. 95- 1 p. |
artikel |
28 |
Excitation spectra of Group III impurities in germanium
|
|
|
1966 |
5 |
1 |
p. 89- 1 p. |
artikel |
29 |
Graphics sampling plans for consumer acceptance of electronic components
|
|
|
1966 |
5 |
1 |
p. 85- 1 p. |
artikel |
30 |
Hall-effect and resistivity measurements at room temperature and -165°C on chromiumnickel alloys
|
|
|
1966 |
5 |
1 |
p. 93- 1 p. |
artikel |
31 |
Integrierte resonanzverstärker ohne induktivitäten
|
Offner, M. |
|
1966 |
5 |
1 |
p. 57-71 15 p. |
artikel |
32 |
Investigation of quenched-in defects in Ge and Si by means of 64Cu
|
|
|
1966 |
5 |
1 |
p. 92- 1 p. |
artikel |
33 |
Maintenance of electronic equipment
|
|
|
1966 |
5 |
1 |
p. 86- 1 p. |
artikel |
34 |
Mass filter studies of gases in a 90-litre getter-ion vacuum system
|
|
|
1966 |
5 |
1 |
p. 94- 1 p. |
artikel |
35 |
Massive heterovalent substitutions in octahedrally coordinated semiconductors
|
|
|
1966 |
5 |
1 |
p. 88-89 2 p. |
artikel |
36 |
Microelectronics, a new method of circuitry
|
|
|
1966 |
5 |
1 |
p. 86- 1 p. |
artikel |
37 |
Microelectronics based on the thin-film technique
|
|
|
1966 |
5 |
1 |
p. 94- 1 p. |
artikel |
38 |
Nanowatt devices
|
|
|
1966 |
5 |
1 |
p. 87-88 2 p. |
artikel |
39 |
Nonlinear coupling with silicon tunnel junctions in integrated logic
|
|
|
1966 |
5 |
1 |
p. 92- 1 p. |
artikel |
40 |
Optical phenomena in GeGaP heterojunctions
|
|
|
1966 |
5 |
1 |
p. 89- 1 p. |
artikel |
41 |
Percussive welding of metal-semiconductor contacts
|
|
|
1966 |
5 |
1 |
p. 91- 1 p. |
artikel |
42 |
Polymer insulating films for cryotron fabrication
|
Allam, D.S. |
|
1966 |
5 |
1 |
p. 19-25 7 p. |
artikel |
43 |
Possibilities of realizing inductances for microelectronic systems
|
|
|
1966 |
5 |
1 |
p. 89- 1 p. |
artikel |
44 |
Practical aspects of vacuum leak detection and location
|
|
|
1966 |
5 |
1 |
p. 93- 1 p. |
artikel |
45 |
Pressure fluctuations in systems evacuated by diffusion pumps
|
|
|
1966 |
5 |
1 |
p. 93- 1 p. |
artikel |
46 |
Properties of high vacuum pumps
|
|
|
1966 |
5 |
1 |
p. 95- 1 p. |
artikel |
47 |
Proprietes de jonctions epitaxiales au germanium preparees a partir d'une phase liquide
|
|
|
1966 |
5 |
1 |
p. 89- 1 p. |
artikel |
48 |
Reliability with standby units
|
|
|
1966 |
5 |
1 |
p. 86- 1 p. |
artikel |
49 |
Scribing and breaking semiconductor material
|
|
|
1966 |
5 |
1 |
p. 90- 1 p. |
artikel |
50 |
Slow surface states and chemisorption
|
|
|
1966 |
5 |
1 |
p. 90- 1 p. |
artikel |
51 |
Solid state inductors
|
|
|
1966 |
5 |
1 |
p. 91- 1 p. |
artikel |
52 |
Special technological equipment for manufacturing thin-film components
|
|
|
1966 |
5 |
1 |
p. 94- 1 p. |
artikel |
53 |
Structure and annealing behavior of metal films deposited on substrates near 80°K. II. gold films on glass
|
|
|
1966 |
5 |
1 |
p. 96- 1 p. |
artikel |
54 |
Study of the metal-oxide-semiconductor field-effect with insulating grid
|
|
|
1966 |
5 |
1 |
p. 91- 1 p. |
artikel |
55 |
Temperature dependence of conductivity of silicon-silicon dioxide interface
|
|
|
1966 |
5 |
1 |
p. 91-92 2 p. |
artikel |
56 |
Textural characteristics and electrical properties of vacuum evaporated silicon films
|
|
|
1966 |
5 |
1 |
p. 94- 1 p. |
artikel |
57 |
The behaviour of electronic components at low operating stress levels
|
Reiche, H. |
|
1966 |
5 |
1 |
p. 1-6 6 p. |
artikel |
58 |
The conduction properties of GeGaAs1z.sbnd;xPx n-n heterojunctions
|
|
|
1966 |
5 |
1 |
p. 91- 1 p. |
artikel |
59 |
The economics of microelectronic construction units in industrial electronics
|
|
|
1966 |
5 |
1 |
p. 86- 1 p. |
artikel |
60 |
The impact of electronics on the Army's repair organization
|
|
|
1966 |
5 |
1 |
p. 86- 1 p. |
artikel |
61 |
The impact of microelectronics on industry
|
|
|
1966 |
5 |
1 |
p. 87- 1 p. |
artikel |
62 |
The importance of automatic reset in diffusion furnaces
|
|
|
1966 |
5 |
1 |
p. 90-91 2 p. |
artikel |
63 |
The measurement of the speed of pumps
|
|
|
1966 |
5 |
1 |
p. 94-95 2 p. |
artikel |
64 |
The oxidation of silicon in dry oxygen
|
|
|
1966 |
5 |
1 |
p. 91- 1 p. |
artikel |
65 |
The performance of a high-speed getter pump using a cooled titanium film
|
|
|
1966 |
5 |
1 |
p. 92-93 2 p. |
artikel |
66 |
The production of precision masks for vacuum deposition of thin films
|
|
|
1966 |
5 |
1 |
p. 93- 1 p. |
artikel |
67 |
The reliability of integrated circuits
|
Mackintosh, I.M. |
|
1966 |
5 |
1 |
p. 27-37 11 p. |
artikel |
68 |
The solubility of sodium in silicon
|
|
|
1966 |
5 |
1 |
p. 89- 1 p. |
artikel |
69 |
Thin-film titanium dioxide capacitors for microelectronic applications
|
|
|
1966 |
5 |
1 |
p. 95- 1 p. |
artikel |
70 |
Thin tantalum layer resistors and capacitors
|
|
|
1966 |
5 |
1 |
p. 95- 1 p. |
artikel |
71 |
“Tuning forks” sound a hopeful note
|
|
|
1966 |
5 |
1 |
p. 87- 1 p. |
artikel |
72 |
Vacuum equipment in microelectronics
|
|
|
1966 |
5 |
1 |
p. 87- 1 p. |
artikel |
73 |
Vacuum evaporation of Polythene
|
|
|
1966 |
5 |
1 |
p. 92- 1 p. |
artikel |
74 |
Welded and bonded connexions for microelectronics
|
Clarke, D.J. |
|
1966 |
5 |
1 |
p. 73-74 2 p. |
artikel |