| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Accelerated active ageing test on SiC JFETs power module with silver joining technology for high temperature application
|
Dupont, L.
|
|
2009
|
49 |
9-11 |
p. 1375-1380
6 p.
|
artikel
|
| 2 |
Accelerated lifetime test of RF-MEMS switches under ESD stress
|
Ruan, J.
|
|
2009
|
49 |
9-11 |
p. 1256-1259
4 p.
|
artikel
|
| 3 |
A methodology to extract failure rates for low-k dielectric breakdown with multiple geometries and in the presence of die-to-die linewidth variation
|
Bashir, Muhammad
|
|
2009
|
49 |
9-11 |
p. 1096-1102
7 p.
|
artikel
|
| 4 |
A Modelisation of the temperature dependence of the Fowler–Nordheim current in EEPROM memories
|
Roca, M.
|
|
2009
|
49 |
9-11 |
p. 1070-1073
4 p.
|
artikel
|
| 5 |
An advanced quality and reliability assessment approach applied to thermal stress issues in electronic components and assemblies
|
Hertl, Michael
|
|
2009
|
49 |
9-11 |
p. 1148-1152
5 p.
|
artikel
|
| 6 |
Analysis of deep submicron VLSI technological risks: A new qualification process for professional electronics
|
Molière, F.
|
|
2009
|
49 |
9-11 |
p. 1381-1385
5 p.
|
artikel
|
| 7 |
Analysis of humidity effects on the degradation of high-power white LEDs
|
Tan, Cher Ming
|
|
2009
|
49 |
9-11 |
p. 1226-1230
5 p.
|
artikel
|
| 8 |
Analysis of the dynamic behavior changes of supercapacitors during calendar life test under several voltages and temperatures conditions
|
El Brouji, H.
|
|
2009
|
49 |
9-11 |
p. 1391-1397
7 p.
|
artikel
|
| 9 |
A new built-in screening methodology to achieve zero defects in the automotive environment
|
Malandruccolo, Vezio
|
|
2009
|
49 |
9-11 |
p. 1334-1340
7 p.
|
artikel
|
| 10 |
A new methodology for the identification of ball bond degradation during high-temperature aging tests on devices in standard plastic packages
|
Auguste, Bahi Manoubi
|
|
2009
|
49 |
9-11 |
p. 1273-1277
5 p.
|
artikel
|
| 11 |
An investigation into the reliability of power modules considering baseplate solders thermal fatigue in aeronautical applications
|
Micol, A.
|
|
2009
|
49 |
9-11 |
p. 1370-1374
5 p.
|
artikel
|
| 12 |
A novel accelerated test technique for assessment of mechanical reliability of solder interconnects
|
Khatibi, G.
|
|
2009
|
49 |
9-11 |
p. 1283-1287
5 p.
|
artikel
|
| 13 |
A study of electrical characteristic changes in MOSFET by electron beam irradiation
|
Mitsui, Yasuhiro
|
|
2009
|
49 |
9-11 |
p. 1182-1187
6 p.
|
artikel
|
| 14 |
Behavior of hot carrier generation in power SOI LDNMOS with shallow trench isolation (STI)
|
Liao, Jie
|
|
2009
|
49 |
9-11 |
p. 1038-1043
6 p.
|
artikel
|
| 15 |
Breakdown characterization of gate oxides in 35 and 70Å BCD8 smart power technology
|
Tazzoli, A.
|
|
2009
|
49 |
9-11 |
p. 1111-1115
5 p.
|
artikel
|
| 16 |
Capacitive RF MEMS analytical predictive reliability and lifetime characterization
|
Matmat, Mohamed
|
|
2009
|
49 |
9-11 |
p. 1304-1308
5 p.
|
artikel
|
| 17 |
Characterisation and modelling of parasitic effects and failure mechanisms in AlGaN/GaN HEMTs
|
Malbert, N.
|
|
2009
|
49 |
9-11 |
p. 1216-1221
6 p.
|
artikel
|
| 18 |
Characterisation of power modules ceramic substrates for reliability aspects
|
Pietranico, S.
|
|
2009
|
49 |
9-11 |
p. 1260-1266
7 p.
|
artikel
|
| 19 |
Characterization of ageing failures on power MOSFET devices by electron and ion microscopies
|
Martineau, D.
|
|
2009
|
49 |
9-11 |
p. 1330-1333
4 p.
|
artikel
|
| 20 |
Characterization of stress degradation effects and thermal properties of AlGaN/GaN HEMTs with photon emission spectral signatures
|
Glowacki, A.
|
|
2009
|
49 |
9-11 |
p. 1211-1215
5 p.
|
artikel
|
| 21 |
CMOS logic gate performance variability related to transistor network arrangements
|
da Silva, Digeorgia N.
|
|
2009
|
49 |
9-11 |
p. 977-981
5 p.
|
artikel
|
| 22 |
Comparing drop impact test method using strain gauge measurements
|
Liu, Y.
|
|
2009
|
49 |
9-11 |
p. 1299-1303
5 p.
|
artikel
|
| 23 |
Comparison and evaluation of newest failure rate prediction models: FIDES and RIAC 217Plus
|
Held, Marcel
|
|
2009
|
49 |
9-11 |
p. 967-971
5 p.
|
artikel
|
| 24 |
Correlation between EOS customer return failure cases and Over Voltage Stress (OVS) test method
|
Lefebvre, Jean Luc
|
|
2009
|
49 |
9-11 |
p. 952-957
6 p.
|
artikel
|
| 25 |
Degradation of TiAlNiAu as ohmic contact metal for GaN HEMTs
|
Piazza, Michele
|
|
2009
|
49 |
9-11 |
p. 1222-1225
4 p.
|
artikel
|
| 26 |
Design for reliability of power electronics modules
|
Lu, Hua
|
|
2009
|
49 |
9-11 |
p. 1250-1255
6 p.
|
artikel
|
| 27 |
Dielectric charging in silicon nitride films for MEMS capacitive switches: Effect of film thickness and deposition conditions
|
Zaghloul, U.
|
|
2009
|
49 |
9-11 |
p. 1309-1314
6 p.
|
artikel
|
| 28 |
Displacement current sensor for contact and intermittent contact scanning capacitance microscopy
|
Biberger, Roland
|
|
2009
|
49 |
9-11 |
p. 1192-1195
4 p.
|
artikel
|
| 29 |
Do ESD fails in systems correlate with IC ESD robustness?
|
Stadler, Wolfgang
|
|
2009
|
49 |
9-11 |
p. 1079-1085
7 p.
|
artikel
|
| 30 |
Editorial
|
Lewis, Dean
|
|
2009
|
49 |
9-11 |
p. 935-936
2 p.
|
artikel
|
| 31 |
Effects of electromagnetic near-field stress on SiGe HBT’s reliability
|
Alaeddine, A.
|
|
2009
|
49 |
9-11 |
p. 1029-1032
4 p.
|
artikel
|
| 32 |
Effects of low gate bias annealing in NBT stressed p-channel power VDMOSFETs
|
Manić, I.
|
|
2009
|
49 |
9-11 |
p. 1003-1007
5 p.
|
artikel
|
| 33 |
Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks
|
Miranda, E.
|
|
2009
|
49 |
9-11 |
p. 1052-1055
4 p.
|
artikel
|
| 34 |
Electrical aging behavioral modeling for reliability analyses of ionizing dose effects on an n-MOS simple current mirror
|
Bestory, C.
|
|
2009
|
49 |
9-11 |
p. 946-951
6 p.
|
artikel
|
| 35 |
Electrical modeling of the effect of beam profile for pulsed laser fault injection
|
Godlewski, C.
|
|
2009
|
49 |
9-11 |
p. 1143-1147
5 p.
|
artikel
|
| 36 |
Electromagnetic immunity model of an ADC for microcontroller’s reliability improvement
|
Gros, Jean-Baptiste
|
|
2009
|
49 |
9-11 |
p. 963-966
4 p.
|
artikel
|
| 37 |
Electromigration in width transition copper interconnect
|
Roy, Arijit
|
|
2009
|
49 |
9-11 |
p. 1086-1089
4 p.
|
artikel
|
| 38 |
Ensuring the reliability of electron beam crosslinked electric cables by the optimization of the dose depth distribution with Monte Carlo simulation
|
Ciappa, Mauro
|
|
2009
|
49 |
9-11 |
p. 972-976
5 p.
|
artikel
|
| 39 |
ESD testing of devices, ICs and systems
|
Smedes, T.
|
|
2009
|
49 |
9-11 |
p. 941-945
5 p.
|
artikel
|
| 40 |
Estimation of SiC JFET temperature during short-circuit operations
|
Berkani, Mounira
|
|
2009
|
49 |
9-11 |
p. 1358-1362
5 p.
|
artikel
|
| 41 |
Evaluation of AlGaInP LEDs reliability based on accelerated tests
|
Nogueira, E.
|
|
2009
|
49 |
9-11 |
p. 1240-1243
4 p.
|
artikel
|
| 42 |
Experimental study about gate oxide damages in patterned MOS capacitor irradiated with heavy ions
|
Busatto, G.
|
|
2009
|
49 |
9-11 |
p. 1033-1037
5 p.
|
artikel
|
| 43 |
Extraction of 3D parasitic capacitances in 90nm and 22nm NAND flash memories
|
Postel-Pellerin, J.
|
|
2009
|
49 |
9-11 |
p. 1056-1059
4 p.
|
artikel
|
| 44 |
Fabrication process simulation and reliability improvement of high-brightness LEDs
|
Chou, Tsung-Lin
|
|
2009
|
49 |
9-11 |
p. 1244-1249
6 p.
|
artikel
|
| 45 |
Failure analysis of video processor defined as No Fault Found (NFF): Reproduction in system level and advanced analysis technique in IC level
|
Jeong, Jae-Seong
|
|
2009
|
49 |
9-11 |
p. 1153-1157
5 p.
|
artikel
|
| 46 |
Failure mechanisms of discrete protection device subjected to repetitive electrostatic discharges (ESD)
|
Diatta, M.
|
|
2009
|
49 |
9-11 |
p. 1103-1106
4 p.
|
artikel
|
| 47 |
Fast reliability qualification of SiP products
|
Regard, Charles
|
|
2009
|
49 |
9-11 |
p. 958-962
5 p.
|
artikel
|
| 48 |
Finite element analyses assisted Scanning Joule Expansion Microscopy on interconnects for failure analysis and reliability investigations
|
Tiedemann, A.-K.
|
|
2009
|
49 |
9-11 |
p. 1165-1168
4 p.
|
artikel
|
| 49 |
GaN HEMT reliability
|
del Alamo, J.A.
|
|
2009
|
49 |
9-11 |
p. 1200-1206
7 p.
|
artikel
|
| 50 |
Heat management for power converters in sealed enclosures: A numerical study
|
Bernardoni, Mirko
|
|
2009
|
49 |
9-11 |
p. 1293-1298
6 p.
|
artikel
|
| 51 |
Impact and damage on deep sub-micron CMOS technology induced by substrate current due to ESD stress
|
Galy, Ph.
|
|
2009
|
49 |
9-11 |
p. 1107-1110
4 p.
|
artikel
|
| 52 |
Impact of O–Si–O bond angle fluctuations on the Si–O bond-breakage rate
|
Tyaginov, Stanislav
|
|
2009
|
49 |
9-11 |
p. 998-1002
5 p.
|
artikel
|
| 53 |
Influence of various process steps on the reliability of PMOSFETs submitted to negative bias temperature instabilities
|
Bénard, Christelle
|
|
2009
|
49 |
9-11 |
p. 1008-1012
5 p.
|
artikel
|
| 54 |
Inside front cover - Editorial board
|
|
|
2009
|
49 |
9-11 |
p. IFC-
1 p.
|
artikel
|
| 55 |
Instable mechanisms during unclamped operation of high power IGBT modules
|
Busatto, G.
|
|
2009
|
49 |
9-11 |
p. 1363-1369
7 p.
|
artikel
|
| 56 |
Investigation of defects introduced by static and dynamic hot carrier stress on SOI partially depleted body-contact MOSFETs
|
Exarchos, M.A.
|
|
2009
|
49 |
9-11 |
p. 1018-1023
6 p.
|
artikel
|
| 57 |
Investigation of stress distribution in via bottom of Cu-via structures with different via form by means of submodeling
|
Ciptokusumo, Johar
|
|
2009
|
49 |
9-11 |
p. 1090-1095
6 p.
|
artikel
|
| 58 |
Investigation on marginal failure characteristics and related defects analysed by soft defect localization
|
Hartmann, C.
|
|
2009
|
49 |
9-11 |
p. 1137-1142
6 p.
|
artikel
|
| 59 |
IR thermography and FEM simulation analysis of on-chip temperature during thermal-cycling power-metal reliability testing using in situ heated structures
|
Köck, Helmut
|
|
2009
|
49 |
9-11 |
p. 1132-1136
5 p.
|
artikel
|
| 60 |
Jitter analysis of PLL-generated clock propagation using Jitter Mitigation techniques with laser voltage probing
|
Liao, Joy Y.
|
|
2009
|
49 |
9-11 |
p. 1127-1131
5 p.
|
artikel
|
| 61 |
Laser THz emission microscope as a novel tool for LSI failure analysis
|
Yamashita, Masatsugu
|
|
2009
|
49 |
9-11 |
p. 1116-1126
11 p.
|
artikel
|
| 62 |
Life-time estimation of high-power blue light-emitting diode chips
|
Kang, Jeung-Mo
|
|
2009
|
49 |
9-11 |
p. 1231-1235
5 p.
|
artikel
|
| 63 |
Lot reliability issues in commercial off the shelf (COTS) microelectronic devices
|
Mura, G.
|
|
2009
|
49 |
9-11 |
p. 1196-1199
4 p.
|
artikel
|
| 64 |
Magnetic microscopy for 3D devices: Defect localization with high resolution and long working distance on complex system in package
|
Infante, F.
|
|
2009
|
49 |
9-11 |
p. 1169-1174
6 p.
|
artikel
|
| 65 |
MEMS reliability: Where are we now?
|
Tanner, D.M.
|
|
2009
|
49 |
9-11 |
p. 937-940
4 p.
|
artikel
|
| 66 |
Microstructure evolution observation for SAC solder joint: Comparison between thermal cycling and thermal storage
|
Berthou, M.
|
|
2009
|
49 |
9-11 |
p. 1267-1272
6 p.
|
artikel
|
| 67 |
Modeling charge variation during data retention of MLC Flash memories
|
Postel-Pellerin, J.
|
|
2009
|
49 |
9-11 |
p. 1060-1063
4 p.
|
artikel
|
| 68 |
Modelling and experimental verification of the impact of negative bias temperature instability on CMOS inverter
|
Berbel, N.
|
|
2009
|
49 |
9-11 |
p. 1048-1051
4 p.
|
artikel
|
| 69 |
Multiscale simulation of aluminum thin films for the design of highly-reliable MEMS devices
|
Kubo, Haruka
|
|
2009
|
49 |
9-11 |
p. 1278-1282
5 p.
|
artikel
|
| 70 |
NBTI and hot carrier effect of SOI p-MOSFETs fabricated in strained Si SOI wafer
|
Jeon, Yong Woo
|
|
2009
|
49 |
9-11 |
p. 994-997
4 p.
|
artikel
|
| 71 |
NBTI and hot-carrier effects in accumulation-mode Pi-gate pMOSFETs
|
Lee, Chi-Woo
|
|
2009
|
49 |
9-11 |
p. 1044-1047
4 p.
|
artikel
|
| 72 |
Net integrity checking by optical localization techniques
|
Haller, G.
|
|
2009
|
49 |
9-11 |
p. 1175-1181
7 p.
|
artikel
|
| 73 |
Numerical prediction of failure paths at a roughened metal/polymer interface
|
Noijen, S.P.M.
|
|
2009
|
49 |
9-11 |
p. 1315-1318
4 p.
|
artikel
|
| 74 |
On the temperature and voltage dependence of short-term negative bias temperature stress
|
Hehenberger, Ph.
|
|
2009
|
49 |
9-11 |
p. 1013-1017
5 p.
|
artikel
|
| 75 |
Percolation theory applied to PZT thin films capacitors breakdown mechanisms
|
Chentir, M.T.
|
|
2009
|
49 |
9-11 |
p. 1074-1078
5 p.
|
artikel
|
| 76 |
Physical analysis, trimming and editing of nanoscale IC function with backside FIB processing
|
Schlangen, R.
|
|
2009
|
49 |
9-11 |
p. 1158-1164
7 p.
|
artikel
|
| 77 |
Process dependence of BTI reliability in advanced HK MG stacks
|
Garros, X.
|
|
2009
|
49 |
9-11 |
p. 982-988
7 p.
|
artikel
|
| 78 |
Quasi hermetic packaging for new generation of spaceborn microwave equipment
|
Monfraix, Philippe
|
|
2009
|
49 |
9-11 |
p. 1326-1329
4 p.
|
artikel
|
| 79 |
Reading distance degradation mechanisms of near-field RFID devices
|
Jacob, Peter
|
|
2009
|
49 |
9-11 |
p. 1288-1292
5 p.
|
artikel
|
| 80 |
Reliability analysis of AlGaN/GaN HEMT on SopSiC composite substrate under long-term DC-life test
|
Ronchi, N.
|
|
2009
|
49 |
9-11 |
p. 1207-1210
4 p.
|
artikel
|
| 81 |
Reliability analysis of InGaN Blu-Ray laser diode
|
Trivellin, Nicola
|
|
2009
|
49 |
9-11 |
p. 1236-1239
4 p.
|
artikel
|
| 82 |
Reliability challenges of automotive power electronics
|
Scheuermann, U.
|
|
2009
|
49 |
9-11 |
p. 1319-1325
7 p.
|
artikel
|
| 83 |
Reliability considerations in pulsed power resonant conversion
|
Carastro, F.
|
|
2009
|
49 |
9-11 |
p. 1352-1357
6 p.
|
artikel
|
| 84 |
Reversible dielectric breakdown in ultrathin Hf based high-k stacks under current-limited stresses
|
Crespo-Yepes, A.
|
|
2009
|
49 |
9-11 |
p. 1024-1028
5 p.
|
artikel
|
| 85 |
Source electrode evolution of a low voltage power MOSFET under avalanche cycling
|
Bernoux, B.
|
|
2009
|
49 |
9-11 |
p. 1341-1345
5 p.
|
artikel
|
| 86 |
Statistical RTS model for digital circuits
|
Brusamarello, Lucas
|
|
2009
|
49 |
9-11 |
p. 1064-1069
6 p.
|
artikel
|
| 87 |
Study for pulse stress NBTI characteristics degradation stress
|
Kawai, Nozomu
|
|
2009
|
49 |
9-11 |
p. 989-993
5 p.
|
artikel
|
| 88 |
Thermal imaging of smart power DMOS transistors in the thermally unstable regime using a compact transient interferometric mapping system
|
Haberfehlner, G.
|
|
2009
|
49 |
9-11 |
p. 1346-1351
6 p.
|
artikel
|
| 89 |
Trapped charge and stress induced leakage current (SILC) in tunnel SiO2 layers of de-processed MOS non-volatile memory devices observed at the nanoscale
|
Lanza, M.
|
|
2009
|
49 |
9-11 |
p. 1188-1191
4 p.
|
artikel
|
| 90 |
Uni-axial mechanical stress effect on Trench Punch through IGBT under short-circuit operation
|
Belmehdi, Y.
|
|
2009
|
49 |
9-11 |
p. 1398-1403
6 p.
|
artikel
|
| 91 |
1300V, 2ms pulse inductive load switching test circuit with 20ns selectable crowbar intervention
|
Rossi, Lucio
|
|
2009
|
49 |
9-11 |
p. 1386-1390
5 p.
|
artikel
|
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