nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
A case study of defects due to process marginalities in deep sub-micron technology
|
Lin, Hung-Sung |
|
2007 |
47 |
9-11 |
p. 1604-1608 5 p. |
artikel |
2 |
Accelerated testing for time dependent dielectric breakdown (TDDB) evaluation of embedded DRAM capacitors using tantalum pentoxide
|
Inani, Anand |
|
2007 |
47 |
9-11 |
p. 1429-1433 5 p. |
artikel |
3 |
A comprehensive study of stress induced leakage current using a floating gate structure for direct applications in EEPROM memories
|
Pic, D. |
|
2007 |
47 |
9-11 |
p. 1373-1377 5 p. |
artikel |
4 |
Active ESD protection circuit design against charged-device-model ESD event in CMOS integrated circuits
|
Chen, Shih-Hung |
|
2007 |
47 |
9-11 |
p. 1502-1505 4 p. |
artikel |
5 |
Advanced backside failure analysis in 65nm CMOS technology
|
Bianic, Stephane |
|
2007 |
47 |
9-11 |
p. 1550-1554 5 p. |
artikel |
6 |
Analysis of ESD protection structure behaviour after ageing as new approach for system level reliability of automotive power devices
|
Goroll, Michael |
|
2007 |
47 |
9-11 |
p. 1512-1516 5 p. |
artikel |
7 |
Analysis of hot carrier effects in a 0.35μm high voltage n-channel LDMOS transistor
|
Enichlmair, H. |
|
2007 |
47 |
9-11 |
p. 1439-1443 5 p. |
artikel |
8 |
An approach to statistical analysis of gate oxide breakdown mechanisms
|
Tan, Cher Ming |
|
2007 |
47 |
9-11 |
p. 1336-1342 7 p. |
artikel |
9 |
A new method to quantify retention-failed cells of an EEPROM CAST
|
Le Roux, C. |
|
2007 |
47 |
9-11 |
p. 1609-1613 5 p. |
artikel |
10 |
A novel SIMS based approach to the characterization of the channel doping profile of a trench MOSFET
|
Zelsacher, R. |
|
2007 |
47 |
9-11 |
p. 1585-1589 5 p. |
artikel |
11 |
Application of time resolved emission techniques within the failure analysis flow
|
Egger, Peter |
|
2007 |
47 |
9-11 |
p. 1545-1549 5 p. |
artikel |
12 |
Applications of DCIV method to NBTI characterization
|
Neugroschel, A. |
|
2007 |
47 |
9-11 |
p. 1366-1372 7 p. |
artikel |
13 |
A step by step methodology to analyze the IGBT failure mechanisms under short circuit and turn-off inductive conditions using 2D physically based device simulation
|
Benmansour, A. |
|
2007 |
47 |
9-11 |
p. 1800-1805 6 p. |
artikel |
14 |
A study of metamorphic HEMT technological improvements: Impact on parasitic effect electrical models
|
Pajona, O. |
|
2007 |
47 |
9-11 |
p. 1643-1648 6 p. |
artikel |
15 |
A study of the threshold-voltage suitability as an application-related reliability indicator for planar-gate non-punch-through IGBTs
|
Castellazzi, A. |
|
2007 |
47 |
9-11 |
p. 1713-1718 6 p. |
artikel |
16 |
Backend dielectric breakdown dependence on linewidth and pattern density
|
Milor, Linda |
|
2007 |
47 |
9-11 |
p. 1473-1477 5 p. |
artikel |
17 |
Backside interferometric methods for localization of ESD-induced leakage current and metal shorts
|
Dubec, V. |
|
2007 |
47 |
9-11 |
p. 1539-1544 6 p. |
artikel |
18 |
Black’s law revisited—Nucleation and growth in electromigration failure
|
Lloyd, J.R. |
|
2007 |
47 |
9-11 |
p. 1468-1472 5 p. |
artikel |
19 |
Characterization and analysis of trap-related effects in AlGaN–GaN HEMTs
|
Faqir, M. |
|
2007 |
47 |
9-11 |
p. 1639-1642 4 p. |
artikel |
20 |
Characterization and modelling of ageing failures on power MOSFET devices
|
Khong, B. |
|
2007 |
47 |
9-11 |
p. 1735-1740 6 p. |
artikel |
21 |
Characterization of moisture properties of polymers for IC packaging
|
Ma, Xiaosong |
|
2007 |
47 |
9-11 |
p. 1685-1689 5 p. |
artikel |
22 |
Comparative study of NBTI as a function of Si film orientation and thickness in SOI pMOSFETs
|
Jang, Sung Jun |
|
2007 |
47 |
9-11 |
p. 1411-1415 5 p. |
artikel |
23 |
Configuration errors analysis in SRAM-based FPGAs: Software tool and practical results
|
Maingot, V. |
|
2007 |
47 |
9-11 |
p. 1836-1840 5 p. |
artikel |
24 |
Degradation behavior of 600V–200A IGBT modules under power cycling and high temperature environment conditions
|
Bouarroudj, M. |
|
2007 |
47 |
9-11 |
p. 1719-1724 6 p. |
artikel |
25 |
Degradation mechanism understanding of NLDEMOS SOI in RF applications
|
Lachenal, D. |
|
2007 |
47 |
9-11 |
p. 1634-1638 5 p. |
artikel |
26 |
Degradation of double-gate polycrystalline silicon TFTs due to hot carrier stress
|
Farmakis, F.V. |
|
2007 |
47 |
9-11 |
p. 1434-1438 5 p. |
artikel |
27 |
Device decapsulated (and/or depassivated) – Retest ok – What happened?
|
Jacob, Peter |
|
2007 |
47 |
9-11 |
p. 1574-1579 6 p. |
artikel |
28 |
3D failure analysis in depth profiles of sequentially made FIB cuts
|
Mc Auley, C.N. |
|
2007 |
47 |
9-11 |
p. 1595-1598 4 p. |
artikel |
29 |
Dynamic laser stimulation techniques for advanced failure analysis and design debug applications
|
Beaudoin, F. |
|
2007 |
47 |
9-11 |
p. 1517-1522 6 p. |
artikel |
30 |
Editorial
|
Labat, Nathalie |
|
2007 |
47 |
9-11 |
p. 1311-1312 2 p. |
artikel |
31 |
Effects of atmospheric neutrons on devices, at sea level and in avionics embedded systems
|
Leray, J.L. |
|
2007 |
47 |
9-11 |
p. 1827-1835 9 p. |
artikel |
32 |
Electrostatic discharge failure analysis of capacitive RF MEMS switches
|
Ruan, J. |
|
2007 |
47 |
9-11 |
p. 1818-1822 5 p. |
artikel |
33 |
Enhanced finite element modelling of Cu electromigration using ANSYS and matlab
|
Li, Wei |
|
2007 |
47 |
9-11 |
p. 1497-1501 5 p. |
artikel |
34 |
ESD protection strategies in advanced CMOS SOI ICs
|
Khazhinsky, M.G. |
|
2007 |
47 |
9-11 |
p. 1313-1321 9 p. |
artikel |
35 |
Exceptional operative gate voltage induces negative bias temperature instability (NBTI) on n-type trench DMOS transistors
|
Aresu, S. |
|
2007 |
47 |
9-11 |
p. 1416-1418 3 p. |
artikel |
36 |
Experimental and numerical analysis of current flow homogeneity in low voltage SOI multi-finger gg-NMOS and NPN ESD protection devices
|
Heer, M. |
|
2007 |
47 |
9-11 |
p. 1450-1455 6 p. |
artikel |
37 |
Failure modes on low voltage power MOSFETs under high temperature application
|
Dupont, L. |
|
2007 |
47 |
9-11 |
p. 1767-1772 6 p. |
artikel |
38 |
Failure-relevant abnormal events in power inverters considering measured IGBT module temperature inhomogeneities
|
Perpiñà, X. |
|
2007 |
47 |
9-11 |
p. 1784-1789 6 p. |
artikel |
39 |
Fault localization at high voltage devices using thermally induced voltage alteration (TIVA)
|
Reissner, M. |
|
2007 |
47 |
9-11 |
p. 1561-1564 4 p. |
artikel |
40 |
Field failure mechanism and improvement of EOS failure of integrated IGBT inverter modules
|
Jeong, Jae-Seong |
|
2007 |
47 |
9-11 |
p. 1795-1799 5 p. |
artikel |
41 |
Finite element modeling of capacitive coupling voltage contrast
|
Tan, Cher Ming |
|
2007 |
47 |
9-11 |
p. 1555-1560 6 p. |
artikel |
42 |
Flexible active cycle stress testing of smart power switches
|
Glavanovics, Michael |
|
2007 |
47 |
9-11 |
p. 1790-1794 5 p. |
artikel |
43 |
Gate charge behaviors in N-channel power VDMOSFETs during HEF and PBT stresses
|
Alwan, M. |
|
2007 |
47 |
9-11 |
p. 1406-1410 5 p. |
artikel |
44 |
High temperature electro-optical degradation of InGaN/GaN HBLEDs
|
Meneghini, M. |
|
2007 |
47 |
9-11 |
p. 1625-1629 5 p. |
artikel |
45 |
High voltage transistor degradation in NVM pump application
|
Bottini, R. |
|
2007 |
47 |
9-11 |
p. 1384-1388 5 p. |
artikel |
46 |
Holding voltage investigation of advanced SCR-based protection structures for CMOS technology
|
Tazzoli, A. |
|
2007 |
47 |
9-11 |
p. 1444-1449 6 p. |
artikel |
47 |
Identification of the physical signatures of CDM induced latent defects into a DC–DC converter using low frequency noise measurements
|
Gao, Y. |
|
2007 |
47 |
9-11 |
p. 1456-1461 6 p. |
artikel |
48 |
Importance of multi-temp testing in automotive qualification and zero defects program
|
Wang, Z. |
|
2007 |
47 |
9-11 |
p. 1358-1361 4 p. |
artikel |
49 |
Influence of polysilicon film thickness on radiation response of advanced excimer laser annealed polycrystalline silicon thin film transistors
|
Davidović, V. |
|
2007 |
47 |
9-11 |
p. 1841-1845 5 p. |
artikel |
50 |
Influence of the manufacturing process on the electrical properties of thin (<4nm) Hafnium based high-k stacks observed with CAFM
|
Lanza, M. |
|
2007 |
47 |
9-11 |
p. 1424-1428 5 p. |
artikel |
51 |
Investigation of a new method for dopant characterization
|
Adrian, J. |
|
2007 |
47 |
9-11 |
p. 1599-1603 5 p. |
artikel |
52 |
Investigation of low temperature SRAM and ROM failures to enable the replacement of cold test insertion by room temperature test
|
Müller, Stefan |
|
2007 |
47 |
9-11 |
p. 1362-1365 4 p. |
artikel |
53 |
Investigation of moisture-induced failures of stacked-die package
|
Kim, Hak Sung |
|
2007 |
47 |
9-11 |
p. 1673-1679 7 p. |
artikel |
54 |
Lifetime estimation of analog circuits from the electrical characteristics of stressed MOSFETs
|
Martín-Martínez, J. |
|
2007 |
47 |
9-11 |
p. 1349-1352 4 p. |
artikel |
55 |
Lifetime modeling of intrinsic gate oxide breakdown at high temperature
|
Moonen, R. |
|
2007 |
47 |
9-11 |
p. 1389-1393 5 p. |
artikel |
56 |
Localization of sensitive areas of power AC switch under thermal laser stimulation
|
Debleds, S. |
|
2007 |
47 |
9-11 |
p. 1569-1573 5 p. |
artikel |
57 |
Local thermal cycles determination in thermosyphon-cooled traction IGBT modules reproducing mission profiles
|
Perpiñà, X. |
|
2007 |
47 |
9-11 |
p. 1701-1706 6 p. |
artikel |
58 |
Long-term reliability of silicon bipolar transistors subjected to low constraints
|
Crosson, A. |
|
2007 |
47 |
9-11 |
p. 1590-1594 5 p. |
artikel |
59 |
Measurement of the transient junction temperature in MOSFET devices under operating conditions
|
Barlini, D. |
|
2007 |
47 |
9-11 |
p. 1707-1712 6 p. |
artikel |
60 |
Mechanical reliability challenges for MEMS packages: Capping
|
van Driel, W.D. |
|
2007 |
47 |
9-11 |
p. 1823-1826 4 p. |
artikel |
61 |
Modeling of the breakdown mechanisms for porous copper/low-k process flows
|
Hong, Changsoo |
|
2007 |
47 |
9-11 |
p. 1478-1482 5 p. |
artikel |
62 |
Molecular simulation on the material/interfacial strength of the low-dielectric materials
|
Yuan, Cadmus A. |
|
2007 |
47 |
9-11 |
p. 1483-1491 9 p. |
artikel |
63 |
Monitoring fading rate of ultracapacitors using online characterization during power cycling
|
Lajnef, W. |
|
2007 |
47 |
9-11 |
p. 1751-1755 5 p. |
artikel |
64 |
Near-field EMC study to improve electronic component reliability
|
Duchamp, G. |
|
2007 |
47 |
9-11 |
p. 1668-1672 5 p. |
artikel |
65 |
Negative bias temperature instabilities in sequentially stressed and annealed p-channel power VDMOSFETs
|
Danković, D. |
|
2007 |
47 |
9-11 |
p. 1400-1405 6 p. |
artikel |
66 |
New developments of THERMOS3, a tool for 3D electro-thermal simulation of smart power MOSFETs
|
Irace, Andrea |
|
2007 |
47 |
9-11 |
p. 1696-1700 5 p. |
artikel |
67 |
Non destructive 3D chip inspection with nano scale potential by use of backside FIB and backscattered electron microscopy
|
Schlangen, R. |
|
2007 |
47 |
9-11 |
p. 1523-1528 6 p. |
artikel |
68 |
Numerical analysis and comparative study of short circuit stress in IGBTs devices (IR, IXYS)
|
Benbahouche, Ly. |
|
2007 |
47 |
9-11 |
p. 1773-1778 6 p. |
artikel |
69 |
OBIRCH analysis of electrically stressed advanced graphic ICs
|
Liao, J.Y. |
|
2007 |
47 |
9-11 |
p. 1565-1568 4 p. |
artikel |
70 |
Oxide reliability below 3nm for advanced CMOS: Issues, characterization, and solutions
|
Goguenheim, D. |
|
2007 |
47 |
9-11 |
p. 1322-1329 8 p. |
artikel |
71 |
Performance and reliability of SLS ELA polysilicon TFTs fabricated with novel crystallization techniques
|
Moschou, D.C. |
|
2007 |
47 |
9-11 |
p. 1378-1383 6 p. |
artikel |
72 |
Preliminary reliability assessment and failure physical analysis on AlGaN/GaN HEMTs COTS
|
Burgaud, P. |
|
2007 |
47 |
9-11 |
p. 1653-1657 5 p. |
artikel |
73 |
Reliability assessment for solders with a stress buffer layer using ball shear strength test and board-level finite element analysis
|
Yew, Ming-Chih |
|
2007 |
47 |
9-11 |
p. 1658-1662 5 p. |
artikel |
74 |
Reliability assessment of multi-via Cu-damascene structures by wafer-level isothermal electromigration tests
|
Marras, A. |
|
2007 |
47 |
9-11 |
p. 1492-1496 5 p. |
artikel |
75 |
Reliability considerations for recent Infineon SiC diode releases
|
Holz, M. |
|
2007 |
47 |
9-11 |
p. 1741-1745 5 p. |
artikel |
76 |
Reliability methods and standards
|
Bisschop, J. |
|
2007 |
47 |
9-11 |
p. 1330-1335 6 p. |
artikel |
77 |
Reliability of interfacial adhesion in a multi-level copper/low-k interconnect structure
|
Chiu, C.C. |
|
2007 |
47 |
9-11 |
p. 1506-1511 6 p. |
artikel |
78 |
Reliability of semiconductor lasers used in current communication systems and sensing equipment
|
Fukuda, Mitsuo |
|
2007 |
47 |
9-11 |
p. 1619-1624 6 p. |
artikel |
79 |
Reliability of spring pressure contacts under environmental stress
|
Lang, F. |
|
2007 |
47 |
9-11 |
p. 1761-1766 6 p. |
artikel |
80 |
Revisiting power cycling test for better life-time prediction in traction
|
Mermet-Guyennet, M. |
|
2007 |
47 |
9-11 |
p. 1690-1695 6 p. |
artikel |
81 |
Robustness test and failure analysis of IGBT modules during turn-off
|
Urresti-Ibañez, J. |
|
2007 |
47 |
9-11 |
p. 1725-1729 5 p. |
artikel |
82 |
Room temperature observation of point defect on gold surface using thermovoltage mapping
|
Roy, Arijit |
|
2007 |
47 |
9-11 |
p. 1580-1584 5 p. |
artikel |
83 |
Science-based MEMS reliability methodology
|
Tanner, D.M. |
|
2007 |
47 |
9-11 |
p. 1806-1811 6 p. |
artikel |
84 |
Sequential environmental stresses tests qualification for automotive components
|
Bahi, M.A. |
|
2007 |
47 |
9-11 |
p. 1680-1684 5 p. |
artikel |
85 |
Statistical analysis during the reliability simulation
|
Bestory, C. |
|
2007 |
47 |
9-11 |
p. 1353-1357 5 p. |
artikel |
86 |
Structure dependent charging process in RF MEMS capacitive switches
|
Papandreou, E. |
|
2007 |
47 |
9-11 |
p. 1812-1817 6 p. |
artikel |
87 |
Study of a failure mechanism during UIS switching of planar PT-IGBT with current sense cell
|
Breglio, G. |
|
2007 |
47 |
9-11 |
p. 1756-1760 5 p. |
artikel |
88 |
Study of hot-carrier effects on power RF LDMOS device reliability
|
Gares, M. |
|
2007 |
47 |
9-11 |
p. 1394-1399 6 p. |
artikel |
89 |
Study of passivation defects by electroluminescence in AlGaN/GaN HEMTS on SiC
|
Bouya, M. |
|
2007 |
47 |
9-11 |
p. 1630-1633 4 p. |
artikel |
90 |
Thermal analysis of InGaN/GaN (GaN substrate) laser diodes using transient interferometric mapping
|
Bychikhin, S. |
|
2007 |
47 |
9-11 |
p. 1649-1652 4 p. |
artikel |
91 |
Thermal approach of defects generation on copper/organic dielectric interface due to SEM inspections
|
de Morais, L. Dantas |
|
2007 |
47 |
9-11 |
p. 1614-1618 5 p. |
artikel |
92 |
Thermal fatigue effects on the temperature distribution inside IGBT modules for zone engine aeronautical applications
|
Lhommeau, T. |
|
2007 |
47 |
9-11 |
p. 1779-1783 5 p. |
artikel |
93 |
The robustness of series-connected high power IGBT modules
|
Abbate, C. |
|
2007 |
47 |
9-11 |
p. 1746-1750 5 p. |
artikel |
94 |
Three-dimensional nanometric sub-surface imaging of a silicon flip-chip using the two-photon optical beam induced current method
|
Ramsay, E. |
|
2007 |
47 |
9-11 |
p. 1534-1538 5 p. |
artikel |
95 |
Time resolved determination of electrical field distributions within dynamically biased power devices by spectral EBIC investigations
|
Pugatschow, A. |
|
2007 |
47 |
9-11 |
p. 1529-1533 5 p. |
artikel |
96 |
TLP Characterization of large gate width devices
|
Coppens, P. |
|
2007 |
47 |
9-11 |
p. 1462-1467 6 p. |
artikel |
97 |
Torsion test applied for reballing and solder paste volume evaluation
|
Maia Filho, W.C. |
|
2007 |
47 |
9-11 |
p. 1663-1667 5 p. |
artikel |
98 |
Trench IGBT failure mechanisms evolution with temperature and gate resistance under various short-circuit conditions
|
Benmansour, A. |
|
2007 |
47 |
9-11 |
p. 1730-1734 5 p. |
artikel |
99 |
Two-dimensional numerical simulations of 1/f noise by GR mechanisms in thin film transistors: Effects of induced defect technology
|
Boukhenoufa, A. |
|
2007 |
47 |
9-11 |
p. 1419-1423 5 p. |
artikel |
100 |
Virtual reliability assessment of integrated power switches based on multi-domain simulation approach
|
Solomalala, P. |
|
2007 |
47 |
9-11 |
p. 1343-1348 6 p. |
artikel |