| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A comprehensive model for PMOS NBTI degradation: Recent progress
|
Alam, M.A.
|
|
2007
|
47 |
6 |
p. 853-862
10 p.
|
artikel
|
| 2 |
An investigation on the influence of electromagnetic interference induced in conducting wire of universal LEDs
|
Tsai, Han-Chang
|
|
2007
|
47 |
6 |
p. 959-966
8 p.
|
artikel
|
| 3 |
A reliability study of the lead-free solder connections of miniature chip components on hybrid circuits
|
Ročak, D.
|
|
2007
|
47 |
6 |
p. 986-995
10 p.
|
artikel
|
| 4 |
Challenges of Ta2O5 as high-k dielectric for nanoscale DRAMs
|
Atanassova, E.
|
|
2007
|
47 |
6 |
p. 913-923
11 p.
|
artikel
|
| 5 |
Circuit level prediction of device performance degradation due to negative bias temperature stress
|
Kuroda, Rihito
|
|
2007
|
47 |
6 |
p. 930-936
7 p.
|
artikel
|
| 6 |
Deep level defects involved in MOS device instabilities
|
Lenahan, P.M.
|
|
2007
|
47 |
6 |
p. 890-898
9 p.
|
artikel
|
| 7 |
Dynamic NBTI characteristics of PMOSFETs with PE-SiN capping
|
Lu, C.Y.
|
|
2007
|
47 |
6 |
p. 924-929
6 p.
|
artikel
|
| 8 |
Editorial
|
Grasser, Tibor
|
|
2007
|
47 |
6 |
p. 839-840
2 p.
|
artikel
|
| 9 |
Gate leakage properties of MOS devices with tri-layer high-k gate dielectric
|
Chen, W.B.
|
|
2007
|
47 |
6 |
p. 937-943
7 p.
|
artikel
|
| 10 |
Hydrogen in MOSFETs – A primary agent of reliability issues
|
Pantelides, Sokrates T.
|
|
2007
|
47 |
6 |
p. 903-911
9 p.
|
artikel
|
| 11 |
Hydrogen transport in doped and undoped polycrystalline silicon
|
Nickel, N.H.
|
|
2007
|
47 |
6 |
p. 899-902
4 p.
|
artikel
|
| 12 |
Iterative algorithm for automatic alignment by object transformation
|
Kim, Hyong Tae
|
|
2007
|
47 |
6 |
p. 972-985
14 p.
|
artikel
|
| 13 |
NBTI product level reliability for a low-power SRAM technology
|
Puchner, Helmut
|
|
2007
|
47 |
6 |
p. 873-879
7 p.
|
artikel
|
| 14 |
Negative bias temperature instabilities in HfSiO(N)-based MOSFETs: Electrical characterization and modeling
|
Houssa, M.
|
|
2007
|
47 |
6 |
p. 880-889
10 p.
|
artikel
|
| 15 |
Negative bias temperature instability: What do we understand?
|
Schroder, Dieter K.
|
|
2007
|
47 |
6 |
p. 841-852
12 p.
|
artikel
|
| 16 |
[No title]
|
Stojcev, Mile
|
|
2007
|
47 |
6 |
p. 996-997
2 p.
|
artikel
|
| 17 |
Performance and reliability improvement of flash device by a novel programming method
|
Ho, Chia-Huai
|
|
2007
|
47 |
6 |
p. 967-971
5 p.
|
artikel
|
| 18 |
Performance comparison of channel engineered deep sub-micrometer pseudo SOI n-MOSFETs
|
Sarkar, Partha
|
|
2007
|
47 |
6 |
p. 953-958
6 p.
|
artikel
|
| 19 |
Probing negative bias temperature instability using a continuum numerical framework: Physics to real world operation
|
Chakravarthi, S.
|
|
2007
|
47 |
6 |
p. 863-872
10 p.
|
artikel
|
| 20 |
The impacts of high tensile stress CESL and geometry design on device performance and reliability for 90nm SOI nMOSFETs
|
Lai, Chieh-Ming
|
|
2007
|
47 |
6 |
p. 944-952
9 p.
|
artikel
|
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