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                             99 results found
no title author magazine year volume issue page(s) type
1 A 3-D Circuit Model to evaluate CDM performance of ICs Sowariraj, M.S.B.
 2005
 45 9-11 p. 1425-1429
5 p.
 article
2 A Dedicated TLP Set-Up to Investigate the ESD Robustness of RF Elements and Circuits Wolf, Heinrich
 2005
 45 9-11 p. 1421-1424
4 p.
 article
3 Advanced electrical analysis of embedded memory cells using atomic force probing Grützner, M.
 2005
 45 9-11 p. 1509-1513
5 p.
 article
4 A 3000 hours DC Life Test on AlGaN/GaN HEMT for RF and microwave applications Sozza, A.
 2005
 45 9-11 p. 1617-1621
5 p.
 article
5 A novel fast and versatile temperature measurement system for LDMOS transistors Tazzoli, A.
 2005
 45 9-11 p. 1742-1745
4 p.
 article
6 A simple moisture diffusion model for the prediction of optimal baking schedules for plastic SMD packages Lee, K.C.
 2005
 45 9-11 p. 1668-1671
4 p.
 article
7 Assessment of the Analytical Capabilities of Scanning Capacitance and Scanning Spreading Resistance Microscopy Applied to Semiconductor Devices Stangoni, Maria
 2005
 45 9-11 p. 1532-1537
6 p.
 article
8 Assessment of the Trench IGBT reliability: low temperature experimental characterization Azzopardi, S.
 2005
 45 9-11 p. 1700-1705
6 p.
 article
9 Author index (Generate from contents) 2005
 45 9-11 p. I-III
nvt p.
 article
10 Automated setup for thermal imaging and electrical degradation study of power DMOS devices Heer, M.
 2005
 45 9-11 p. 1688-1693
6 p.
 article
11 Basic Principles for Managing Foundry Programs London, A.
 2005
 45 9-11 p. 1285-1292
8 p.
 article
12 Biaxial initial stress characterization of bilayer gold RF-switches Yacine, K.
 2005
 45 9-11 p. 1776-1781
6 p.
 article
13 Characterisation of dopants distribution using electron holography and FIB-based lift-off preparation Muehle, U.
 2005
 45 9-11 p. 1558-1561
4 p.
 article
14 Characterization of a 0.13 μm CMOS Link Chip using Time Resolved Emission (TRE) Stellari, Franco
 2005
 45 9-11 p. 1550-1553
4 p.
 article
15 Circuit-internal signal measurements with a needle sensor Hartmann, C.
 2005
 45 9-11 p. 1505-1508
4 p.
 article
16 Comparative analysis of accelerated ageing effects on power RF LDMOS reliability Belaïd, M.A.
 2005
 45 9-11 p. 1732-1737
6 p.
 article
17 Correlation between Experimental Results and FE Simulations to Evaluate Lead-Free BGA Assembly Reliability Guédon-Gracia, A.
 2005
 45 9-11 p. 1652-1657
6 p.
 article
18 Dc and low frequency noise analysis of hot-carrier induced degradation of low complexity 0.13 μm CMOS bipolar transistors Benoit, P.
 2005
 45 9-11 p. 1800-1806
7 p.
 article
19 DC-to-RF dispersion effects in GaAs- and GaN-based heterostructure FETs: performance and reliability issues Verzellesi, G.
 2005
 45 9-11 p. 1585-1592
8 p.
 article
20 Degradation of high-K LA2O3 gate dielectrics using progressive electrical stress Miranda, E.
 2005
 45 9-11 p. 1365-1369
5 p.
 article
21 Dielectric reliability of stacked Al2O3–HfO2 MIS capacitors with cylinder type for improving DRAM data retention characteristics Seo, J.Y.
 2005
 45 9-11 p. 1360-1364
5 p.
 article
22 Die repackaging for failure analysis Barberan, S.
 2005
 45 9-11 p. 1576-1580
5 p.
 article
23 Different Failure signatures of multiple TLP and HBM Stresses in an ESD robust protection structure Guitard, N.
 2005
 45 9-11 p. 1415-1420
6 p.
 article
24 Dynamic Laser Stimulation Case Studies Beaudoin, F.
 2005
 45 9-11 p. 1538-1543
6 p.
 article
25 Dynamic stress-induced high-frequency noise degradations in nMOSFETs Yu, Chuanzhao
 2005
 45 9-11 p. 1794-1799
6 p.
 article
26 Effect of test condition and stress free temperature on the electromigration failure of Cu dual damascene submicron interconnect line-via test structures Roy, Arijit
 2005
 45 9-11 p. 1443-1448
6 p.
 article
27 Effect of vacuum break after the barrier layer deposition on the electromigration performance of aluminum based line interconnects Tan, Cher Ming
 2005
 45 9-11 p. 1449-1454
6 p.
 article
28 Effects of uni-axial mechanical stress on IGBT characteristics Usui, Masanori
 2005
 45 9-11 p. 1682-1687
6 p.
 article
29 Electrical Performance Evaluation of FIB Edited Circuits through Chip Backside Exposing Shallow Trench Isolations Schlangen, R.
 2005
 45 9-11 p. 1544-1549
6 p.
 article
30 Electroluminescence spectroscopy for reliability investigations of 1.55 μm bulk semiconductor optical amplifier Huyghe, S.
 2005
 45 9-11 p. 1593-1599
7 p.
 article
31 ElectroStatic Discharge Fault Localization by Laser Probing Grauby, S.
 2005
 45 9-11 p. 1482-1486
5 p.
 article
32 Elimination of surface state induced edge transistors in high voltage NMOSFETs for flash memory devices Lee, Jin-Wook
 2005
 45 9-11 p. 1394-1397
4 p.
 article
33 ESD circuit model based protection network optimisation for extended-voltage NMOS drivers Vassilev, V.
 2005
 45 9-11 p. 1430-1435
6 p.
 article
34 Experimental and Numerical investigation about SEB/SEGR of Power MOSFET Busatto, G.
 2005
 45 9-11 p. 1711-1716
6 p.
 article
35 Extraction of Accurate Thermal Compact Models for Fast Electro-Thermal Simulation of IGBT Modules in Hybrid Electric Vehicles Ciappa, M.
 2005
 45 9-11 p. 1694-1699
6 p.
 article
36 Failure Analysis Issues in Microelectromechanical Systems (MEMS) Walraven, J.A.
 2005
 45 9-11 p. 1750-1757
8 p.
 article
37 Failure analysis of micro-heating elements suspended on thin membranes Briand, D.
 2005
 45 9-11 p. 1786-1789
4 p.
 article
38 Failure mechanisms and qualification testing of passive components Post, H.A.
 2005
 45 9-11 p. 1626-1632
7 p.
 article
39 Failure predictive model of capacitive RF-MEMS Mellé, S.
 2005
 45 9-11 p. 1770-1775
6 p.
 article
40 FTIR spectroscopy for the hermeticity assessment of micro-cavities Veyrié, D.
 2005
 45 9-11 p. 1764-1769
6 p.
 article
41 Gate stress effect on low temperature data retention characteristics of split-gate flash memories Hu, Ling-Chang
 2005
 45 9-11 p. 1331-1336
6 p.
 article
42 Hot carrier and soft breakdown effects on LNA performance for ultra wideband communications Xiao, E.
 2005
 45 9-11 p. 1382-1385
4 p.
 article
43 Hot-carrier reliability of 20V MOS transistors in 0.13 μm CMOS technology Rey-Tauriac, Y.
 2005
 45 9-11 p. 1349-1354
6 p.
 article
44 Hydrogen-related influence of the metallization stack on characteristics and reliability of a trench gate oxide Nelhiebel, M.
 2005
 45 9-11 p. 1355-1359
5 p.
 article
45 Image alignment for 3D reconstruction in a SEM Pintus, Ruggero
 2005
 45 9-11 p. 1581-1584
4 p.
 article
46 Impact of semiconductors material on IR Laser Stimulation signal Firiti, A.
 2005
 45 9-11 p. 1465-1470
6 p.
 article
47 Impacts of the recovery phenomena on the worst-case of damage in DC/AC stressed ultra-thin NO gate-oxide MOSFETs Bravaix, A.
 2005
 45 9-11 p. 1370-1375
6 p.
 article
48 Innovative Methodology for Predictive Reliability of Intelligent Power Devices Using Extreme Electro-thermal Fatigue Khong, B.
 2005
 45 9-11 p. 1717-1722
6 p.
 article
49 Innovative packaging technique for backside optical testing of wire-bonded chips Tosi, A.
 2005
 45 9-11 p. 1493-1498
6 p.
 article
50 Intermittent contact scanning capacitance microscopy-An improved method for 2D doping profiling Breitschopf, Peter
 2005
 45 9-11 p. 1568-1571
4 p.
 article
51 Investigation of charging mechanisms in metal-insulator-metal structures Exarchos, M.
 2005
 45 9-11 p. 1782-1785
4 p.
 article
52 Investigation on seal-ring rules for IC product reliability in 0.25-μm CMOS technology Chen, Shih-Hung
 2005
 45 9-11 p. 1311-1316
6 p.
 article
53 Isolating failing sites in IC packages using time domain reflectometry: Case studies Abessolo-Bidzo, D.
 2005
 45 9-11 p. 1639-1644
6 p.
 article
54 Issues in electromagnetic compatibility of integrated circuits: emission and susceptibility Sicard, E.
 2005
 45 9-11 p. 1277-1284
8 p.
 article
55 Layout dependency induced deviation from Poisson area scaling in BEOL dielectric reliability Li, Y.-L.
 2005
 45 9-11 p. 1299-1304
6 p.
 article
56 Lifetime prediction on the base of mission profiles Ciappa, Mauro
 2005
 45 9-11 p. 1293-1298
6 p.
 article
57 Light Emission to Time Resolved Emission For IC Debug and Failure Analysis Remmach, M.
 2005
 45 9-11 p. 1476-1481
6 p.
 article
58 Localization and physical analysis of dielectric weaknesses for state-of-the-art deep trench based DRAM products Neumann, G.
 2005
 45 9-11 p. 1520-1525
6 p.
 article
59 Localization of Marginal Circuits for Yield Diagnostics Utilizing a Dynamic Laser Stimulation Probing System Liao, J.Y.
 2005
 45 9-11 p. 1554-1557
4 p.
 article
60 Moisture diffusion in Printed Circuit Boards: Measurements and Finite- Element- Simulations Weide-Zaage, Kirsten
 2005
 45 9-11 p. 1662-1667
6 p.
 article
61 Negative bias temperature instability mechanisms in p-channel power VDMOSFETs Stojadinović, N.
 2005
 45 9-11 p. 1343-1348
6 p.
 article
62 New experimental approach for failure prediction in electronics: Topography and deformation measurement complemented with acoustic microscopy Richard, Isaline
 2005
 45 9-11 p. 1645-1651
7 p.
 article
63 NIR laser stimulation for dynamic timing analysis Sanchez, K.
 2005
 45 9-11 p. 1459-1464
6 p.
 article
64 Non-destructive identification of open circuit in wiring on organic substrate with high wiring density covered with solder resist Tan, Cher Ming
 2005
 45 9-11 p. 1572-1575
4 p.
 article
65 Non-destructive Testing Technique for MOSFET’s Characterisation during Soft-Switching ZVS Operations Iannuzzo, Francesco
 2005
 45 9-11 p. 1738-1741
4 p.
 article
66 [No title] Labat, N.
 2005
 45 9-11 p. 1275-1276
2 p.
 article
67 On state breakdown in PHEMTs and its temperature dependence Cova, P.
 2005
 45 9-11 p. 1605-1610
6 p.
 article
68 Out of plane vs in plane flexural behaviour of thin polysilicon films: Mechanical characterization and application of the Weibull approach Cacchione, F.
 2005
 45 9-11 p. 1758-1763
6 p.
 article
69 Oxide charge measurements in EEPROM devices De Nardi, C.
 2005
 45 9-11 p. 1514-1519
6 p.
 article
70 Performances and limitations analyses of PHEMT and MHEMT for applications in high bit rate fiber-optic systems Pajona, O.
 2005
 45 9-11 p. 1622-1625
4 p.
 article
71 Photon emission microscopy of inter/intra chip device performance variations Polonsky, S.
 2005
 45 9-11 p. 1471-1475
5 p.
 article
72 Pre- and post-BD electrical conduction of stressed HfO2/SiO2 MOS gate stacks observed at the nanoscale Aguilera, L.
 2005
 45 9-11 p. 1390-1393
4 p.
 article
73 Prediction of Delamination Related IC & Packaging Reliability Problems van Driel, W.D.
 2005
 45 9-11 p. 1633-1638
6 p.
 article
74 Radiation source dependence of performance degradation in thin gate oxide fully-depleted SOI n-MOSFETs Hayama, K.
 2005
 45 9-11 p. 1376-1381
6 p.
 article
75 Reliability challenges for copper low-k dielectrics and copper diffusion barriers Tökei, Zs.
 2005
 45 9-11 p. 1436-1442
7 p.
 article
76 Reliability enhancement with the aid of transient infrared thermal analysis of smart Power MOSFETs during short circuit operation Irace, A.
 2005
 45 9-11 p. 1706-1710
5 p.
 article
77 Reliability for Recessed Channel Structure n-MOSFET Seo, J.Y.
 2005
 45 9-11 p. 1317-1320
4 p.
 article
78 Reliability improvement by the suppression of keyhole generation in W-plug vias Kim, Jong Hun
 2005
 45 9-11 p. 1455-1458
4 p.
 article
79 Reliability investigations on LTG-GaAs photomixers for THz generation based on optical heterodyning Sydlo, C.
 2005
 45 9-11 p. 1600-1604
5 p.
 article
80 Reliability of Contacts for Press-Pack High-Power Devices Vobecký, J.
 2005
 45 9-11 p. 1676-1681
6 p.
 article
81 Reliability Potential Of Epoxy Based Encapsulants For Automotive Applications Braun, T.
 2005
 45 9-11 p. 1672-1675
4 p.
 article
82 Reliability predictions in electronic industrial applications Cassanelli, G.
 2005
 45 9-11 p. 1321-1326
6 p.
 article
83 Reliability screening through electrical testing for press-fit alternator power diode in automotive application Tan, Cher Ming
 2005
 45 9-11 p. 1723-1727
5 p.
 article
84 Robust, versatile, direct low-frequency noise characterization method for material/process quality control using cross-shaped 4-terminal devices Kerlain, A.
 2005
 45 9-11 p. 1327-1330
4 p.
 article
85 Safe operating area of GaAs MESFET and PHEMT for amplification in overdrive operating conditions Ismail, N.
 2005
 45 9-11 p. 1611-1616
6 p.
 article
86 Seebeck Effect Detection on Biased Device without OBIRCH Distortion Using FET Readout Brahma, Sanjib Kumar
 2005
 45 9-11 p. 1487-1492
6 p.
 article
87 Specification and use of pulsed current profiles for ultracapacitors power cycling Lajnef, W.
 2005
 45 9-11 p. 1746-1749
4 p.
 article
88 SRAM cell defect isolation methodology by sub micron probing technique Sibileau, F.
 2005
 45 9-11 p. 1562-1567
6 p.
 article
89 STEM role in failure analysis Iannello, M.-A.
 2005
 45 9-11 p. 1526-1531
6 p.
 article
90 Stress Mechanism about Field Lightning Surge of High Voltage BJT Based Line Driver for ADSL System Jeong, Jae-Seong
 2005
 45 9-11 p. 1398-1401
4 p.
 article
91 Study of Area Scaling Effect on Integrated Circuit Reliability Based on Yield Models Hong, Changsoo
 2005
 45 9-11 p. 1305-1310
6 p.
 article
92 The impact of static and dynamic degradation on SOI “smart-cut” floating body MOSFETs Exarchos, M.A.
 2005
 45 9-11 p. 1386-1389
4 p.
 article
93 Thermal and electrostatic reliability characterization in RF MEMS switches Duong, Q.-H.
 2005
 45 9-11 p. 1790-1793
4 p.
 article
94 Trench insulated gate bipolar transistors submitted to high temperature bias stress Maïga, C.O.
 2005
 45 9-11 p. 1728-1731
4 p.
 article
95 Trends and challenges to ESD and Latch-up designs for nanometer CMOS technologies Boselli, G.
 2005
 45 9-11 p. 1406-1414
9 p.
 article
96 Tunnel oxide degradation under pulsed stress Ghidini, G.
 2005
 45 9-11 p. 1337-1342
6 p.
 article
97 Two-dimensional Dopant Profiling and Imaging of 4H Silicon Carbide Devices by Secondary Electron Potential Contrast Buzzo, M.
 2005
 45 9-11 p. 1499-1504
6 p.
 article
98 Vibration lifetime modelling of PCB assemblies using steinberg model Dehbi, A.
 2005
 45 9-11 p. 1658-1661
4 p.
 article
99 Voltage stress-induced hot carrier effects on SiGe HBT VCO Yu, Chuanzhao
 2005
 45 9-11 p. 1402-1405
4 p.
 article
                             99 results found
 
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