nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
Amorphous silicon technology for large area digital X-ray and optical imaging
|
Nathan, Arokia |
|
2002 |
42 |
4-5 |
p. 735-746 12 p. |
artikel |
2 |
Analysis and modeling of a digital CMOS circuit operation and reliability after gate oxide breakdown: a case study
|
Kaczer, B. |
|
2002 |
42 |
4-5 |
p. 555-564 10 p. |
artikel |
3 |
Application of adhesive bonding techniques in hard disk drive head assembly
|
Luk, C.F. |
|
2002 |
42 |
4-5 |
p. 767-777 11 p. |
artikel |
4 |
A review of recent MOSFET threshold voltage extraction methods
|
Ortiz-Conde, A. |
|
2002 |
42 |
4-5 |
p. 583-596 14 p. |
artikel |
5 |
A thermodynamic limit for digital electronics
|
De Mey, Gilbert |
|
2002 |
42 |
4-5 |
p. 507-510 4 p. |
artikel |
6 |
Construction of a cost-effective failure analysis service network––microelectronic failure analysis service in Japan
|
Nakajima, S |
|
2002 |
42 |
4-5 |
p. 511-521 11 p. |
artikel |
7 |
Defects in silicon oxynitride gate dielectric films
|
Wong, Hei |
|
2002 |
42 |
4-5 |
p. 597-605 9 p. |
artikel |
8 |
DRAM reliability
|
Kim, Kinam |
|
2002 |
42 |
4-5 |
p. 543-553 11 p. |
artikel |
9 |
Effects of high electric field and elevated-temperature bias stressing on radiation response in power VDMOSFETs
|
Stojadinovic, N. |
|
2002 |
42 |
4-5 |
p. 669-677 9 p. |
artikel |
10 |
Effects of hydrogen transport and reactions on microelectronics radiation response and reliability
|
Fleetwood, D.M. |
|
2002 |
42 |
4-5 |
p. 523-541 19 p. |
artikel |
11 |
Electrical and structural investigations in reliability characterisation of modern passives and passive integrated components
|
Dziedzic, Andrzej |
|
2002 |
42 |
4-5 |
p. 709-719 11 p. |
artikel |
12 |
Electrical noise and RTS fluctuations in advanced CMOS devices
|
Ghibaudo, G. |
|
2002 |
42 |
4-5 |
p. 573-582 10 p. |
artikel |
13 |
Enhancing reliability with thermal transient testing
|
Székely, V. |
|
2002 |
42 |
4-5 |
p. 629-640 12 p. |
artikel |
14 |
Failure modes and mechanisms of InP-based and metamorphic high electron mobility transistors
|
Meneghesso, Gaudenzio |
|
2002 |
42 |
4-5 |
p. 685-708 24 p. |
artikel |
15 |
Logarithmic distributions in reliability analysis
|
Jones, B.K. |
|
2002 |
42 |
4-5 |
p. 779-786 8 p. |
artikel |
16 |
Mechanical reliability in electronic packaging
|
Amagai, Masazumi |
|
2002 |
42 |
4-5 |
p. 607-627 21 p. |
artikel |
17 |
[No title]
|
Stojadinovic, Ninoslav |
|
2002 |
42 |
4-5 |
p. 463- 1 p. |
artikel |
18 |
Optical semiconductor device reliability
|
Fukuda, Mitsuo |
|
2002 |
42 |
4-5 |
p. 679-683 5 p. |
artikel |
19 |
Physical analysis of hard and soft breakdown failures in ultrathin gate oxides
|
Radhakrishnan, M.K. |
|
2002 |
42 |
4-5 |
p. 565-571 7 p. |
artikel |
20 |
Reliability issues of silicon LSIs facing 100-nm technology node
|
Takeda, Eiji |
|
2002 |
42 |
4-5 |
p. 493-506 14 p. |
artikel |
21 |
RF CMOS technology for MMIC
|
Chang, Chun-Yen |
|
2002 |
42 |
4-5 |
p. 721-733 13 p. |
artikel |
22 |
Selected failure mechanisms of modern power modules
|
Ciappa, Mauro |
|
2002 |
42 |
4-5 |
p. 653-667 15 p. |
artikel |
23 |
Silicon integrated circuit technology from past to future
|
Iwai, Hiroshi |
|
2002 |
42 |
4-5 |
p. 465-491 27 p. |
artikel |
24 |
Statistical modeling of MOS devices for parametric yield prediction
|
Liou, Juin J. |
|
2002 |
42 |
4-5 |
p. 787-795 9 p. |
artikel |
25 |
The “trouble not identified” phenomenon in automotive electronics
|
Thomas, Dawn A. |
|
2002 |
42 |
4-5 |
p. 641-651 11 p. |
artikel |
26 |
Use of preliminary ultraviolet and infrared illumination for diagnostics of MOS and bipolar devices radiation response
|
Pershenkov, V.S. |
|
2002 |
42 |
4-5 |
p. 797-804 8 p. |
artikel |
27 |
Zapping thin film transistors
|
Tošić Golo, N. |
|
2002 |
42 |
4-5 |
p. 747-765 19 p. |
artikel |