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                             37 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 Body effect induced wear-out acceleration in ultra-thin oxides Bruyère, S.
 2001
 41 7 p. 1031-1034
4 p.
 artikel
2 Characterising the surface roughness of AFM grown SiO2 on Si Hill, D.
 2001
 41 7 p. 1077-1079
3 p.
 artikel
3 Chemical and physical limits on the performance of metal silicate high-k gate dielectrics Lucovsky, G.
 2001
 41 7 p. 937-945
9 p.
 artikel
4 Dielectric breakdown distributions for void containing silicon substrates Falster, R.
 2001
 41 7 p. 967-971
5 p.
 artikel
5 Direct tunnelling models for circuit simulation O'Sullivan, P.
 2001
 41 7 p. 951-957
7 p.
 artikel
6 Electrical characterization and quantum modeling of MOS capacitors with ultra-thin oxides (1.4–3 nm) Clerc, R.
 2001
 41 7 p. 1027-1030
4 p.
 artikel
7 Electrical reliability aspects of through the gate implanted MOS structures with thin oxides Jank, M.P.M
 2001
 41 7 p. 987-990
4 p.
 artikel
8 Epitaxial, high-K dielectrics on silicon: the example of praseodymium oxide Osten, H.J.
 2001
 41 7 p. 991-994
4 p.
 artikel
9 FeRAM technology for high density applications Mikolajick, T.
 2001
 41 7 p. 947-950
4 p.
 artikel
10 Flat band voltage shift and oxide properties after rapid thermal annealing O'Sullivan, B.J.
 2001
 41 7 p. 1053-1056
4 p.
 artikel
11 High field stress at and above room temperature in 2.3 nm thick oxides Zander, D.
 2001
 41 7 p. 1023-1026
4 p.
 artikel
12 Impact of substituting SiO2 ILD by low k materials into AlCu RIE metallization Weber, D
 2001
 41 7 p. 1081-1083
3 p.
 artikel
13 Impact of the As dose in 0.35 μ m EEPROM technology: characterization and modeling Galbiati, N.
 2001
 41 7 p. 999-1002
4 p.
 artikel
14 Influence of a low field with opposite polarity to the stress on the degradation of 4.5 nm thick SiO2 films Rodrı́guez, R.
 2001
 41 7 p. 1011-1013
3 p.
 artikel
15 In memory of Pierre Rossel Charitat, Georges
 2001
 41 7 p. 933-934
2 p.
 artikel
16 In situ crystallisation in ZrO2 thin films during high temperature X-ray diffraction Zhao, C.
 2001
 41 7 p. 995-998
4 p.
 artikel
17 Local current fluctuations before and after breakdown of thin SiO2 films observed with conductive atomic force microscope Porti, M
 2001
 41 7 p. 1041-1044
4 p.
 artikel
18 Multi-frequency transconductance technique for interface characterization of deep sub-micron SOI–MOSFETs Kumar, A.
 2001
 41 7 p. 1049-1051
3 p.
 artikel
19 Nitrogen implantations for rapid thermal oxinitride layers Stadler, A.
 2001
 41 7 p. 977-980
4 p.
 artikel
20 [No title] Martin, Andreas
 2001
 41 7 p. 935-
1 p.
 artikel
21 On the influence of the variation of measurement conditions on the FNT characteristics of stressed thin silicon oxides Zahlmann-Nowitzki, J.-W
 2001
 41 7 p. 1067-1069
3 p.
 artikel
22 Optical and electrical characterization of the electron beam gun evaporated TiO2 film Mikhelashvili, V
 2001
 41 7 p. 1057-1061
5 p.
 artikel
23 Optimization of WSi2 by SiH4 CVD: impact on oxide quality Brazzelli, D.
 2001
 41 7 p. 1003-1006
4 p.
 artikel
24 Oxide reliability: influence of interface roughness, structure layout, and depletion layer formation Lanchava, B.
 2001
 41 7 p. 1097-1100
4 p.
 artikel
25 Plasma charging damage mechanisms and impact on new technologies Reimbold, G.
 2001
 41 7 p. 959-965
7 p.
 artikel
26 Pseudopotential study of PrO2 and HfO2 in fluorite phase Da̧browski, J.
 2001
 41 7 p. 1093-1096
4 p.
 artikel
27 Quality assessment of thin oxides using constant and ramped stress measurements Diestel, Gunnar
 2001
 41 7 p. 1019-1022
4 p.
 artikel
28 Reduction of boron penetration through thin silicon oxide with a nitrogen doped silicon layer Jalabert, L.
 2001
 41 7 p. 981-985
5 p.
 artikel
29 Reliability of ultrathin nitrided oxides grown in low pressure N2O ambient Beichele, M.
 2001
 41 7 p. 1089-1092
4 p.
 artikel
30 Sub-100 nm CMOS circuit performance with high-K gate dielectrics Mohapatra, N.R.
 2001
 41 7 p. 1045-1048
4 p.
 artikel
31 Suppression of boron penetration through thin gate oxides by nitrogen implantation into the gate electrode in PMOS devices Strobel, S
 2001
 41 7 p. 1085-1088
4 p.
 artikel
32 The electron irradiation effects on silicon gate dioxide used for power MOS devices Badila, M.
 2001
 41 7 p. 1015-1018
4 p.
 artikel
33 The influence of p-polysilicon gate doping on the dielectric breakdown of PMOS devices Innertsberger, G
 2001
 41 7 p. 973-975
3 p.
 artikel
34 Threshold energies in the light emission characteristics of silicon MOS tunnel diodes Asli, N.
 2001
 41 7 p. 1071-1076
6 p.
 artikel
35 Ultra-thick gate oxides: charge generation and its impact on reliability Schwalke, Udo
 2001
 41 7 p. 1007-1010
4 p.
 artikel
36 Ultra-thin oxides on silicon fabricated using ultra-slow multicharged ion beams Borsoni, G.
 2001
 41 7 p. 1063-1066
4 p.
 artikel
37 Wear-out, breakdown occurrence and failure detection in 18–25 Å ultrathin oxides Monsieur, F.
 2001
 41 7 p. 1035-1039
5 p.
 artikel
                             37 gevonden resultaten
 
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