| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A new approach to the dynamic thermal modelling of semiconductor packages
|
Masana, F.N
|
|
2001
|
41 |
6 |
p. 901-912
12 p.
|
artikel
|
| 2 |
A new finite element approach to stress analysis in microfabrication technology
|
Mijalković, Slobodan
|
|
2001
|
41 |
6 |
p. 837-845
9 p.
|
artikel
|
| 3 |
A simplified yield modeling method for design rule trade-off in interconnection substrates
|
Scheffler, Michael
|
|
2001
|
41 |
6 |
p. 861-869
9 p.
|
artikel
|
| 4 |
A technique for transparent fault injection and simulation in VHDL
|
Zwolinski, Mark
|
|
2001
|
41 |
6 |
p. 797-804
8 p.
|
artikel
|
| 5 |
Characterisation of embedded filters in advanced printed wiring boards
|
O'Reilly, Stephen
|
|
2001
|
41 |
6 |
p. 781-788
8 p.
|
artikel
|
| 6 |
Effects of electron beam generated in vacuum photo-thermal processing on metal–silicon contacts
|
Golan, G
|
|
2001
|
41 |
6 |
p. 871-879
9 p.
|
artikel
|
| 7 |
Electro-thermal simulation of microsystems with mixed abstraction modelling
|
Jakovljevic, Mirko
|
|
2001
|
41 |
6 |
p. 823-835
13 p.
|
artikel
|
| 8 |
Generation–recombination noise in bipolar transistors
|
Dai, Yisong
|
|
2001
|
41 |
6 |
p. 919-925
7 p.
|
artikel
|
| 9 |
High injection effects on noise characteristics of Si BJTs and SiGe HBTs
|
Martı́n-Martı́nez, M.J.
|
|
2001
|
41 |
6 |
p. 847-854
8 p.
|
artikel
|
| 10 |
Improved analysis of low frequency noise in dynamic threshold MOS/SOI transistors
|
Haendler, S
|
|
2001
|
41 |
6 |
p. 855-860
6 p.
|
artikel
|
| 11 |
Improved understanding of metal ion reservoirs within barrier-metal systems
|
Dion, Michael J
|
|
2001
|
41 |
6 |
p. 805-814
10 p.
|
artikel
|
| 12 |
In the memory of Yisong Dai
|
Jones, Brian K
|
|
2001
|
41 |
6 |
p. 779-
1 p.
|
artikel
|
| 13 |
Lateral base design rules for optimized low-frequency noise of differentially grown SiGe heterojunction bipolar transistors
|
Sandén, Martin
|
|
2001
|
41 |
6 |
p. 881-886
6 p.
|
artikel
|
| 14 |
Recombination current measurements in the space charge region of MOS field-induced pn junctions
|
Sorge, R
|
|
2001
|
41 |
6 |
p. 789-795
7 p.
|
artikel
|
| 15 |
Reliability evaluation of a silicon-on-silicon MCM-D package
|
Barton, J
|
|
2001
|
41 |
6 |
p. 887-899
13 p.
|
artikel
|
| 16 |
Study of light-induced annealing effects in a-Si:H thin films
|
Ho, W.Y.
|
|
2001
|
41 |
6 |
p. 913-917
5 p.
|
artikel
|
| 17 |
Substrate potential shift due to parasitic minority carrier injection in smart-power ICs: measurements and full-chip 3D device simulation
|
Schenkel, M
|
|
2001
|
41 |
6 |
p. 815-822
8 p.
|
artikel
|
| 18 |
The effect of image potential on electron transmission and electric current in the direct tunneling regime of ultra-thin MOS structures
|
Mao, Lingfeng
|
|
2001
|
41 |
6 |
p. 927-931
5 p.
|
artikel
|
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