| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A.C. behaviour of damaged surface layers on CdS crystals
|
|
|
1965
|
4 |
3 |
p. 304-
1 p.
|
artikel
|
| 2 |
Active R-C filters for tantalum thin film circuitry
|
|
|
1965
|
4 |
3 |
p. 311-
1 p.
|
artikel
|
| 3 |
A manufacturer's approach to high reliability
|
|
|
1965
|
4 |
3 |
p. 301-302
2 p.
|
artikel
|
| 4 |
An analysis of physical adsorption isotherms in ultra-high-vacuum range
|
|
|
1965
|
4 |
3 |
p. 313-314
2 p.
|
artikel
|
| 5 |
An analysis of the CdSe thin-film triode as a current limiter
|
|
|
1965
|
4 |
3 |
p. 311-
1 p.
|
artikel
|
| 6 |
An equipment manufacturer's problems in the application of microelectronics
|
Lawton, A.T.
|
|
1965
|
4 |
3 |
p. 275-278
4 p.
|
artikel
|
| 7 |
A new concept for microminiature interconnections
|
|
|
1965
|
4 |
3 |
p. 302-
1 p.
|
artikel
|
| 8 |
An investigation into the reliability of planar transistors
|
Young, M.R.P.
|
|
1965
|
4 |
3 |
p. 245-266
22 p.
|
artikel
|
| 9 |
Application of low energy sputtering for thin film deposition
|
|
|
1965
|
4 |
3 |
p. 311-312
2 p.
|
artikel
|
| 10 |
A review of step-stress testing
|
|
|
1965
|
4 |
3 |
p. 302-
1 p.
|
artikel
|
| 11 |
A study of “tunnel” conduction between two metallic layers separated by a thin oxide layer
|
|
|
1965
|
4 |
3 |
p. 312-
1 p.
|
artikel
|
| 12 |
A technique for measuring the temperature of nickel-chromium films in thin film circuits
|
Parmee, J.L.
|
|
1965
|
4 |
3 |
p. 295-296
2 p.
|
artikel
|
| 13 |
A tuned microelectronic amplifier using thin films
|
Windle, D.J.
|
|
1965
|
4 |
3 |
p. 241-242
2 p.
|
artikel
|
| 14 |
Basic considerations in integrated circuit design
|
|
|
1965
|
4 |
3 |
p. 306-
1 p.
|
artikel
|
| 15 |
Built-in reliability
|
|
|
1965
|
4 |
3 |
p. 301-
1 p.
|
artikel
|
| 16 |
Calculation of the capacitance of a semiconductor surface, with application to silicon
|
|
|
1965
|
4 |
3 |
p. 309-
1 p.
|
artikel
|
| 17 |
Capacitance-voltage dependence on zinc-diffused GaAs p-n junctions
|
|
|
1965
|
4 |
3 |
p. 309-
1 p.
|
artikel
|
| 18 |
Carrier surface scattering in silicon inversion layers
|
|
|
1965
|
4 |
3 |
p. 307-
1 p.
|
artikel
|
| 19 |
Cathodic pulverization, its mechanisms, its means of operation, its original applications in the field of thin layers
|
|
|
1965
|
4 |
3 |
p. 312-
1 p.
|
artikel
|
| 20 |
Chemical and ambient effects on surface conduction is passivated silicon semiconductor
|
|
|
1965
|
4 |
3 |
p. 308-
1 p.
|
artikel
|
| 21 |
Correlation between cyclic strain range and low-cycle fatigue life of metals
|
|
|
1965
|
4 |
3 |
p. 303-
1 p.
|
artikel
|
| 22 |
Cost: a reliability factor
|
|
|
1965
|
4 |
3 |
p. 301-
1 p.
|
artikel
|
| 23 |
Depositing active and passive thin-film elements on one chip
|
|
|
1965
|
4 |
3 |
p. 310-311
2 p.
|
artikel
|
| 24 |
Designing with low-noise MOS FETs: a little different but no harder
|
|
|
1965
|
4 |
3 |
p. 312-
1 p.
|
artikel
|
| 25 |
Effect of low temperature annealing on the surface conductivity of Si in the Si-SiO2-Al system
|
|
|
1965
|
4 |
3 |
p. 307-308
2 p.
|
artikel
|
| 26 |
Effect of physio-chemical parameters upon electromagnetic properties of thin Fe-Ni layers
|
|
|
1965
|
4 |
3 |
p. 312-
1 p.
|
artikel
|
| 27 |
Effect of temperature and bias on glass-silicon interfaces
|
|
|
1965
|
4 |
3 |
p. 306-307
2 p.
|
artikel
|
| 28 |
Effect of vacuum environment on thin film component reliability
|
|
|
1965
|
4 |
3 |
p. 313-
1 p.
|
artikel
|
| 29 |
Electrical conduction in thin aggregated metal films
|
|
|
1965
|
4 |
3 |
p. 311-
1 p.
|
artikel
|
| 30 |
Electric properties of thin films of Germanium with relation to their structure
|
|
|
1965
|
4 |
3 |
p. 313-
1 p.
|
artikel
|
| 31 |
Electrochemical phenomena in thin films of silicon dioxide on silicon
|
|
|
1965
|
4 |
3 |
p. 307-
1 p.
|
artikel
|
| 32 |
Electrode control of SiO2-passivated planar junctions
|
|
|
1965
|
4 |
3 |
p. 307-
1 p.
|
artikel
|
| 33 |
Electronic solid-substance component parts (Part 1)
|
|
|
1965
|
4 |
3 |
p. 304-
1 p.
|
artikel
|
| 34 |
Etching polished depressions in glass plates
|
|
|
1965
|
4 |
3 |
p. 311-
1 p.
|
artikel
|
| 35 |
Extension of the theory of thin-film transistors
|
|
|
1965
|
4 |
3 |
p. 310-
1 p.
|
artikel
|
| 36 |
Factors influencing the selection and use of integrated circuit packages
|
|
|
1965
|
4 |
3 |
p. 303-
1 p.
|
artikel
|
| 37 |
General considerations on some properties of thin layers in electronic applications
|
|
|
1965
|
4 |
3 |
p. 312-
1 p.
|
artikel
|
| 38 |
Growth and structure of electrodeposited thin metal films
|
|
|
1965
|
4 |
3 |
p. 314-
1 p.
|
artikel
|
| 39 |
Integrated-circuit makers are ready for the big buying boom to start
|
|
|
1965
|
4 |
3 |
p. 305-
1 p.
|
artikel
|
| 40 |
Integrated-circuit system keeps costs down to earth
|
|
|
1965
|
4 |
3 |
p. 304-
1 p.
|
artikel
|
| 41 |
Investigation of thermally oxidised silicon surfaces using metal-oxide-semiconductor structure
|
|
|
1965
|
4 |
3 |
p. 309-
1 p.
|
artikel
|
| 42 |
Investigations into the life of silicon-planar transistors
|
|
|
1965
|
4 |
3 |
p. 302-
1 p.
|
artikel
|
| 43 |
Leak detection and detectors
|
|
|
1965
|
4 |
3 |
p. 313-
1 p.
|
artikel
|
| 44 |
Linear microcircuits scarce? Now you can breadboard your own
|
|
|
1965
|
4 |
3 |
p. 303-
1 p.
|
artikel
|
| 45 |
Logical circuit for microelectronics
|
|
|
1965
|
4 |
3 |
p. 304-
1 p.
|
artikel
|
| 46 |
Measurement of resistivity of silicon epitaxial layers by the three-point probe technique
|
|
|
1965
|
4 |
3 |
p. 310-
1 p.
|
artikel
|
| 47 |
Metastable alloy films
|
|
|
1965
|
4 |
3 |
p. 314-
1 p.
|
artikel
|
| 48 |
Microcircuits
|
|
|
1965
|
4 |
3 |
p. 305-
1 p.
|
artikel
|
| 49 |
Microelectronics for every circuit engineer—the cermet-semiconductor hybrid module
|
|
|
1965
|
4 |
3 |
p. 305-
1 p.
|
artikel
|
| 50 |
Miniaturizing mobile radio equipment
|
|
|
1965
|
4 |
3 |
p. 304-
1 p.
|
artikel
|
| 51 |
Multiple faults and confidence levels
|
Briggs, N.H.
|
|
1965
|
4 |
3 |
p. 235-240
6 p.
|
artikel
|
| 52 |
On Si-C contamination of silicon epitaxial wafer
|
|
|
1965
|
4 |
3 |
p. 308-
1 p.
|
artikel
|
| 53 |
Optical and structural properties of oxidized titanium films
|
|
|
1965
|
4 |
3 |
p. 314-
1 p.
|
artikel
|
| 54 |
Permanent degradation of GaAs tunnel diodes
|
|
|
1965
|
4 |
3 |
p. 302-
1 p.
|
artikel
|
| 55 |
p-n heterojunctions
|
|
|
1965
|
4 |
3 |
p. 309-
1 p.
|
artikel
|
| 56 |
Progress in the continuous observation of thin-film nucleation and growth processes by electron microscopy
|
|
|
1965
|
4 |
3 |
p. 314-
1 p.
|
artikel
|
| 57 |
Proton space charge in anodic oxide films
|
|
|
1965
|
4 |
3 |
p. 313-
1 p.
|
artikel
|
| 58 |
Rationalized packaging—a new approach to equipment design and assembly
|
|
|
1965
|
4 |
3 |
p. 303-304
2 p.
|
artikel
|
| 59 |
Reliability
|
|
|
1965
|
4 |
3 |
p. 302-
1 p.
|
artikel
|
| 60 |
Reliability and maintenance of electronic register-translators
|
|
|
1965
|
4 |
3 |
p. 303-
1 p.
|
artikel
|
| 61 |
Reliability of an electronic process control system
|
|
|
1965
|
4 |
3 |
p. 303-
1 p.
|
artikel
|
| 62 |
R.F. Connectors—achievement of reliability through standardization and testing
|
|
|
1965
|
4 |
3 |
p. 303-
1 p.
|
artikel
|
| 63 |
R.F. Connectors—electrical and mechanical factors affecting their selection
|
|
|
1965
|
4 |
3 |
p. 303-
1 p.
|
artikel
|
| 64 |
Shallow acceptor level in GaAs crystals resulting from Cu diffusion
|
|
|
1965
|
4 |
3 |
p. 305-
1 p.
|
artikel
|
| 65 |
SiO2 masking against phosphorus diffusion using a P2O5 source
|
|
|
1965
|
4 |
3 |
p. 308-
1 p.
|
artikel
|
| 66 |
Source contamination effects on the epitaxy of Ge films on Ge
|
|
|
1965
|
4 |
3 |
p. 310-
1 p.
|
artikel
|
| 67 |
Space charge injection into impurity semiconductors—II
|
|
|
1965
|
4 |
3 |
p. 305-
1 p.
|
artikel
|
| 68 |
Space-charge model for surface potential shifts in silicon passivated with thin insulating layers
|
|
|
1965
|
4 |
3 |
p. 306-
1 p.
|
artikel
|
| 69 |
Stabilization of SiO2 passivation layers with P2O5
|
|
|
1965
|
4 |
3 |
p. 306-
1 p.
|
artikel
|
| 70 |
Structure and annealing behaviour of metal films deposited on substrates near 80°K: 1. Copper films on glass
|
|
|
1965
|
4 |
3 |
p. 314-
1 p.
|
artikel
|
| 71 |
Studies of transparent electrically conductive tin dioxide layers
|
|
|
1965
|
4 |
3 |
p. 311-
1 p.
|
artikel
|
| 72 |
System considerations in the application of microcircuitry
|
|
|
1965
|
4 |
3 |
p. 304-
1 p.
|
artikel
|
| 73 |
Systems criteria for thin film welding
|
|
|
1965
|
4 |
3 |
p. 310-
1 p.
|
artikel
|
| 74 |
The design of silicon frequency selective RC networks
|
Benes̆, O.
|
|
1965
|
4 |
3 |
p. 267-268
2 p.
|
artikel
|
| 75 |
The established reliability specification
|
|
|
1965
|
4 |
3 |
p. 301-
1 p.
|
artikel
|
| 76 |
The heating in vacuum of silicon substrates to temperatures greater than 800°C
|
|
|
1965
|
4 |
3 |
p. 306-
1 p.
|
artikel
|
| 77 |
The junction depth of concentration-dependent diffusion. Zinc in III–V compounds
|
|
|
1965
|
4 |
3 |
p. 308-
1 p.
|
artikel
|
| 78 |
The meaning of reliability
|
|
|
1965
|
4 |
3 |
p. 301-
1 p.
|
artikel
|
| 79 |
Thermal desorption of attached gas from surface sites possessing a uniform distribution of activation energies
|
|
|
1965
|
4 |
3 |
p. 313-
1 p.
|
artikel
|
| 80 |
Thickness measurement of silicon dioxide layers by the ultraviolet-visible interference method
|
|
|
1965
|
4 |
3 |
p. 308-
1 p.
|
artikel
|
| 81 |
Thickness measurements of thin layers obtained by the method of evaporation in a vacuum
|
|
|
1965
|
4 |
3 |
p. 313-
1 p.
|
artikel
|
| 82 |
Thin dielectric layers
|
|
|
1965
|
4 |
3 |
p. 312-
1 p.
|
artikel
|
| 83 |
Thin ferromagnetic films
|
|
|
1965
|
4 |
3 |
p. 312-
1 p.
|
artikel
|
| 84 |
Thin films of titanium and titanium oxide for microminiaturization
|
Huber, F.
|
|
1965
|
4 |
3 |
p. 283-293
11 p.
|
artikel
|
| 85 |
Troubleshooting performance as a function of presentation technique and equipment characteristics
|
|
|
1965
|
4 |
3 |
p. 301-
1 p.
|
artikel
|
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