| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A method for separating the effects of interface from border and oxide trapped charge densities in mos transistors
|
Savić, Zoran
|
|
1997
|
37 |
7 |
p. 1147-1150
4 p.
|
artikel
|
| 2 |
A study of hot-electron degradation effects in pseudomorphic HEMTs
|
Cova, Paolo
|
|
1997
|
37 |
7 |
p. 1131-1135
5 p.
|
artikel
|
| 3 |
Calendar of forthcoming events
|
|
|
1997
|
37 |
7 |
p. 1153-1160
8 p.
|
artikel
|
| 4 |
Challenges for giga-scale integration
|
Takeda, Eiji
|
|
1997
|
37 |
7 |
p. 985-1001
17 p.
|
artikel
|
| 5 |
Characterization of Al-Si-Cu metal lines by means of tem analysis and the sarf technique
|
Ciofi, C.
|
|
1997
|
37 |
7 |
p. 1079-1085
7 p.
|
artikel
|
| 6 |
Characterizing wearout, breakdown and trap generation in thin silicon oxide
|
Dumin, David J.
|
|
1997
|
37 |
7 |
p. 1029-1038
10 p.
|
artikel
|
| 7 |
Circuit and process design considerations for ESD protection in advanced CMOS processes
|
Anderson, Warren R.
|
|
1997
|
37 |
7 |
p. 1087-1103
17 p.
|
artikel
|
| 8 |
Editorial
|
Stojadinović, Ninoslav
|
|
1997
|
37 |
7 |
p. 983-984
2 p.
|
artikel
|
| 9 |
Electromigration: A review
|
Pierce, D.G.
|
|
1997
|
37 |
7 |
p. 1053-1072
20 p.
|
artikel
|
| 10 |
ESD tester parasitics and stress conditions and their impact on device failure levels and failure mechanisms
|
Daniel, S.
|
|
1997
|
37 |
7 |
p. 1105-1110
6 p.
|
artikel
|
| 11 |
Failure mechanisms of AlGaAs/InGaAs pseudomorphic hemt's: Effects due to hot electrons and modulation of trapped charge
|
Meneghesso, Gaudenzio
|
|
1997
|
37 |
7 |
p. 1121-1129
9 p.
|
artikel
|
| 12 |
Hot-carrier degradation mechanisms in silicon-On-Insulator MOSFETS
|
Cristoloveanu, Sorin
|
|
1997
|
37 |
7 |
p. 1003-1013
11 p.
|
artikel
|
| 13 |
Hot-carrier stress effects on the amplitude of Random Telegraph Signals in small area Si p-MOSFETS
|
Simoen, E.
|
|
1997
|
37 |
7 |
p. 1015-1019
5 p.
|
artikel
|
| 14 |
List of reviewers
|
|
|
1997
|
37 |
7 |
p. 1151-1152
2 p.
|
artikel
|
| 15 |
Physical limitation on drain voltage of power PM HEMT
|
Vashchenko, V.A.
|
|
1997
|
37 |
7 |
p. 1137-1141
5 p.
|
artikel
|
| 16 |
Shape effect on electromigration in VLSI interconnects
|
Gonzalez, J.L.
|
|
1997
|
37 |
7 |
p. 1073-1078
6 p.
|
artikel
|
| 17 |
Slow state characterization by measurements of current-voltage characteristics of MOS capacitors
|
Dimitrijev, Sima
|
|
1997
|
37 |
7 |
p. 1143-1146
4 p.
|
artikel
|
| 18 |
Small-signal gate-to-drain capacitance of MOSFET as a diagnostic tool for hot-carrier induced degradation
|
Ghodsi, R.
|
|
1997
|
37 |
7 |
p. 1021-1028
8 p.
|
artikel
|
| 19 |
Structures for ESD protection in CMOS processes
|
Fried, Rafael
|
|
1997
|
37 |
7 |
p. 1111-1120
10 p.
|
artikel
|
| 20 |
Study of unipolar pulsed ramp and combined ramped/constant voltage stress on mos gate oxides
|
Martin, A.
|
|
1997
|
37 |
7 |
p. 1045-1051
7 p.
|
artikel
|
| 21 |
Thin oxide mos damage generated after treatment in a merie reactor
|
Atanassova, E.
|
|
1997
|
37 |
7 |
p. 1039-1043
5 p.
|
artikel
|
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