nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
Analysis for the reliability of the intrinsic base ion implantation of a 3 Ghz I2L bipolar process from the measure of integrated resistances: From the results, setting of rules for an expert system
|
Loheac, J.-L. |
|
1997 |
37 |
1 |
p. 179-186 8 p. |
artikel |
2 |
CMOS VLSI reliability test model
|
Lisenker, Boris |
|
1997 |
37 |
1 |
p. 115-120 6 p. |
artikel |
3 |
Comparison of self-heating effect in GAA and SOI mosfets
|
Francis, P. |
|
1997 |
37 |
1 |
p. 61-75 15 p. |
artikel |
4 |
Criteria to reduce failures induced from conveyed electromagnetic interferences on CMOS operational amplifiers
|
Graffi, S. |
|
1997 |
37 |
1 |
p. 95-113 19 p. |
artikel |
5 |
Editorial
|
Stojadinović, Ninoslav |
|
1997 |
37 |
1 |
p. iii-v nvt p. |
artikel |
6 |
Editorial Board
|
|
|
1997 |
37 |
1 |
p. IFC- 1 p. |
artikel |
7 |
Effect of deposition conditions on stability of sputtered oxide in MOS structures
|
Jelenkovic, Emil V. |
|
1997 |
37 |
1 |
p. 159-169 11 p. |
artikel |
8 |
Failure analysis in halfmicron and quartermicron eras
|
Nakajima, Shigeru |
|
1997 |
37 |
1 |
p. 39-52 14 p. |
artikel |
9 |
Improved understanding of physical defect mechanisms using fault simulation
|
Garyet, Terry C. |
|
1997 |
37 |
1 |
p. 121-135 15 p. |
artikel |
10 |
Observation of DC currents induced in MOS capacitors during NBTS aging
|
Lu, Deren |
|
1997 |
37 |
1 |
p. 171-177 7 p. |
artikel |
11 |
Publisher's announcement
|
|
|
1997 |
37 |
1 |
p. 1- 1 p. |
artikel |
12 |
Resistance noise measurement: A better diagnostic tool to detect stress and current induced degradation
|
Vandamme, L.K.J. |
|
1997 |
37 |
1 |
p. 87-93 7 p. |
artikel |
13 |
Scaling down and reliability problems of gigabit CMOS circuits
|
Krautschneider, W.H. |
|
1997 |
37 |
1 |
p. 19-37 19 p. |
artikel |
14 |
Symbolic fault modelling of MOS combinational circuits
|
Petković, Predrag M. |
|
1997 |
37 |
1 |
p. 137-157 21 p. |
artikel |
15 |
Temperature coefficient of resistance fluctuations during electromigration in Al lines
|
Ciofi, C. |
|
1997 |
37 |
1 |
p. 77-85 9 p. |
artikel |
16 |
The impact of the substrate preamorphisation on the electrical performances of p+/n silicon junction diodes
|
Minondo, M. |
|
1997 |
37 |
1 |
p. 53-60 8 p. |
artikel |
17 |
Toward a building-in reliability approach
|
Schafft, Harry A. |
|
1997 |
37 |
1 |
p. 3-18 16 p. |
artikel |