| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A comparison of MOSFETs aging under d.c., a.c. and alternating stress conditions
|
Revil, Nathalie
|
|
1993
|
33 |
11-12 |
p. 1909-1919
11 p.
|
artikel
|
| 2 |
An investigation of hot carrier effects in submicron CMOS integrated circuits
|
Fang, Peng
|
|
1993
|
33 |
11-12 |
p. 1713-1727
15 p.
|
artikel
|
| 3 |
Application of the atomic force microscope to integrated circuit failure analysis
|
Rodgers, Mark R.
|
|
1993
|
33 |
11-12 |
p. 1947-1956
10 p.
|
artikel
|
| 4 |
Characterisation of electromigration damage by multiple electrical measurements
|
Jones, B.K.
|
|
1993
|
33 |
11-12 |
p. 1829-1840
12 p.
|
artikel
|
| 5 |
Dielectric integrity of thin thermal oxides on silicon
|
Brożek, Tomasz
|
|
1993
|
33 |
11-12 |
p. 1637-1656
20 p.
|
artikel
|
| 6 |
Dynamic effects in hot-carrier degradation relevant for CMOS operation
|
Weber, W.
|
|
1993
|
33 |
11-12 |
p. 1729-1736
8 p.
|
artikel
|
| 7 |
Editorial
|
Stojadinović, N.D.
|
|
1993
|
33 |
11-12 |
p. 1635-1636
2 p.
|
artikel
|
| 8 |
Electromigration in thin-films for microelectronics
|
Baldini, G.L.
|
|
1993
|
33 |
11-12 |
p. 1779-1805
27 p.
|
artikel
|
| 9 |
Hot-carrier effects in scaled MOS devices
|
Takeda, Eiji
|
|
1993
|
33 |
11-12 |
p. 1687-1711
25 p.
|
artikel
|
| 10 |
Hot-carrier effects on leakage currents in MOSFETs—Modelling and experiment
|
Oualid, J.
|
|
1993
|
33 |
11-12 |
p. 1759-1777
19 p.
|
artikel
|
| 11 |
Implications of a localised defect model for wafer level reliability measurements of thin dielectrics
|
O'Sullivan, Paula
|
|
1993
|
33 |
11-12 |
p. 1679-1685
7 p.
|
artikel
|
| 12 |
Influence of series resistance in oxide parameter extraction data from accelerated tests
|
Pio, F.
|
|
1993
|
33 |
11-12 |
p. 1657-1663
7 p.
|
artikel
|
| 13 |
On the status of wafer-level metal integrity testing
|
Dion, Michael J.
|
|
1993
|
33 |
11-12 |
p. 1807-1827
21 p.
|
artikel
|
| 14 |
Reliability issues in submicron MOSFETs with oxynitride gate dielectrics
|
Joshi, Aniruddha B.
|
|
1993
|
33 |
11-12 |
p. 1845-1866
22 p.
|
artikel
|
| 15 |
Reliability issues of offset drain transistors after different modes of static electrical stress
|
Papadas, C.
|
|
1993
|
33 |
11-12 |
p. 1921-1933
13 p.
|
artikel
|
| 16 |
Reliability issues of silicon-dioxide structures—Application to FLOTOX EEPROM cells
|
Papadas, C.
|
|
1993
|
33 |
11-12 |
p. 1867-1908
42 p.
|
artikel
|
| 17 |
Resistance decay after electromigration as the effect of mechanical stress relaxation
|
Baldini, G.L.
|
|
1993
|
33 |
11-12 |
p. 1841-1844
4 p.
|
artikel
|
| 18 |
Statistical modelling of time dependent oxide breakdown distributions
|
Vollertsen, R.-P.
|
|
1993
|
33 |
11-12 |
p. 1665-1677
13 p.
|
artikel
|
| 19 |
The in-process bond shear test: Its relationship to ball bond reliability and its application to the reduction of wirebond process variation
|
Guzman, Melissa Shell-De
|
|
1993
|
33 |
11-12 |
p. 1935-1946
12 p.
|
artikel
|
| 20 |
Transient hot-electron effect and its impact on circuit reliability
|
Wang, Hai
|
|
1993
|
33 |
11-12 |
p. 1737-1758
22 p.
|
artikel
|
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