| no |
title |
author |
magazine |
year |
volume |
issue |
page(s) |
type |
| 1 |
A comparison of resistivity measurement techniques on epitaxial silicon
|
|
|
1964
|
3 |
4 |
p. 312-
1 p.
|
article
|
| 2 |
Alloys for GaAs devices
|
|
|
1964
|
3 |
4 |
p. 314-
1 p.
|
article
|
| 3 |
A method for the continuous measurement of thickness and deposition rate of conducting films during a vacuum evaporation
|
|
|
1964
|
3 |
4 |
p. 316-
1 p.
|
article
|
| 4 |
An electronic ear for certifying reliability
|
|
|
1964
|
3 |
4 |
p. 308-
1 p.
|
article
|
| 5 |
A practical approach to thin-film circuits, Part 1
|
|
|
1964
|
3 |
4 |
p. 319-
1 p.
|
article
|
| 6 |
A simple method for the single or repeated replication of selected areas of surfaces in electron microscopy
|
|
|
1964
|
3 |
4 |
p. 320-
1 p.
|
article
|
| 7 |
A survey of methods of measuring thin film thicknesses and surface irregularities
|
|
|
1964
|
3 |
4 |
p. 316-
1 p.
|
article
|
| 8 |
A Ti getter pump with evaporation source of TiC on the optimum evaporation condition of titanium
|
|
|
1964
|
3 |
4 |
p. 316-
1 p.
|
article
|
| 9 |
A tunable solid-circuit filter suitable for an i.f. amplifier
|
|
|
1964
|
3 |
4 |
p. 312-
1 p.
|
article
|
| 10 |
Behaviour of CdS thin-film transistors
|
|
|
1964
|
3 |
4 |
p. 318-
1 p.
|
article
|
| 11 |
Behaviour of lattice defects in GaAs
|
|
|
1964
|
3 |
4 |
p. 314-
1 p.
|
article
|
| 12 |
Behaviour of selenium in gallium arsenide
|
|
|
1964
|
3 |
4 |
p. 309-
1 p.
|
article
|
| 13 |
Case histories in the field of microelectronic packaging
|
|
|
1964
|
3 |
4 |
p. 309-
1 p.
|
article
|
| 14 |
Characteristics of insulator diodes determined by space-charge and diffusion
|
|
|
1964
|
3 |
4 |
p. 311-
1 p.
|
article
|
| 15 |
Characteristics of the dielectric diode and triode at very high frequencies
|
|
|
1964
|
3 |
4 |
p. 319-
1 p.
|
article
|
| 16 |
Circuit redundancy as an aid to making functioning cryotron circuits
|
Longden, Maureen
|
|
1964
|
3 |
4 |
p. 239-251
13 p.
|
article
|
| 17 |
Deposition of tantalum films with an open-ended vacuum system
|
|
|
1964
|
3 |
4 |
p. 317-
1 p.
|
article
|
| 18 |
Distributed device applications of the superconducting tunnel junction
|
|
|
1964
|
3 |
4 |
p. 318-
1 p.
|
article
|
| 19 |
Electrical activity of copper in GaAs
|
|
|
1964
|
3 |
4 |
p. 314-
1 p.
|
article
|
| 20 |
Electrical evaluation of thin film CdS diodes and transistors
|
|
|
1964
|
3 |
4 |
p. 315-
1 p.
|
article
|
| 21 |
Electrical properties of surface layers on CdTe crystals
|
|
|
1964
|
3 |
4 |
p. 318-
1 p.
|
article
|
| 22 |
Electron beam machining
|
|
|
1964
|
3 |
4 |
p. 319-
1 p.
|
article
|
| 23 |
Epitaxy: a fresh approach to semicon circuit design
|
|
|
1964
|
3 |
4 |
p. 311-
1 p.
|
article
|
| 24 |
Equipment makers push thin-film microcircuits
|
|
|
1964
|
3 |
4 |
p. 317-318
2 p.
|
article
|
| 25 |
Equivalent circuit parameters for functional electronic blocks
|
|
|
1964
|
3 |
4 |
p. 313-
1 p.
|
article
|
| 26 |
Erhöhung der zuverlässigkeit von nachrichtenanlagen durch redundanzeine kritische betrachtung
|
Koppehele, F.
|
|
1964
|
3 |
4 |
p. 293-301
9 p.
|
article
|
| 27 |
Evaporated film strain gauges for high-temperature applications
|
Maclachlan, D.F.A.
|
|
1964
|
3 |
4 |
p. 227-232
6 p.
|
article
|
| 28 |
Evaporation from barium nickel matrix cathodes
|
|
|
1964
|
3 |
4 |
p. 315-
1 p.
|
article
|
| 29 |
Exciton emission and energy transport in cadmium sulfide crystals
|
|
|
1964
|
3 |
4 |
p. 319-
1 p.
|
article
|
| 30 |
Ferrites: can they be deposited as thin films?
|
|
|
1964
|
3 |
4 |
p. 317-
1 p.
|
article
|
| 31 |
Fiabilités des matériels électroniques. Essai de classification suivant les besoins des utilisateurs
|
Eldin, J.
|
|
1964
|
3 |
4 |
p. 263-269
7 p.
|
article
|
| 32 |
Flat cable shrinks microcircuit modules
|
|
|
1964
|
3 |
4 |
p. 311-
1 p.
|
article
|
| 33 |
Formation and dissolution of platinum oxide film: Mechanism and kinetics
|
|
|
1964
|
3 |
4 |
p. 315-
1 p.
|
article
|
| 34 |
Forward step in microcircuits: thin-film transistors form scanning generator
|
|
|
1964
|
3 |
4 |
p. 318-
1 p.
|
article
|
| 35 |
Four-wire terminating unit uses “thin-film” pads
|
|
|
1964
|
3 |
4 |
p. 317-
1 p.
|
article
|
| 36 |
Gold-epitaxial silicon h.f. diodes
|
|
|
1964
|
3 |
4 |
p. 310-311
2 p.
|
article
|
| 37 |
Hot-electron emission from n-silicon
|
|
|
1964
|
3 |
4 |
p. 314-
1 p.
|
article
|
| 38 |
Ideal active elements: a contribution to the problem of their physical realizability
|
|
|
1964
|
3 |
4 |
p. 310-
1 p.
|
article
|
| 39 |
Inclusion of the rate of manifold outgassing in the vacuum pumping equation
|
|
|
1964
|
3 |
4 |
p. 317-
1 p.
|
article
|
| 40 |
Interconnection of integrated circuit flat packs in Autonetics improved Minuteman programme
|
|
|
1964
|
3 |
4 |
p. 312-
1 p.
|
article
|
| 41 |
Interface states in abrupt semiconductor heterojunctions
|
|
|
1964
|
3 |
4 |
p. 313-314
2 p.
|
article
|
| 42 |
La fiabilité opérationnelle dans le cas d'un matériel militaire aperçu sur l'établissement d'un devis de fiabilité previsionnelle
|
Fafeur, J.
|
|
1964
|
3 |
4 |
p. 271-291
21 p.
|
article
|
| 43 |
Laser beam trims resistors
|
|
|
1964
|
3 |
4 |
p. 318-
1 p.
|
article
|
| 44 |
Mechanical and electrical properties of thermocompression bonds
|
|
|
1964
|
3 |
4 |
p. 312-
1 p.
|
article
|
| 45 |
Mesoplasmas and “second breakdown” in silicon junctions
|
|
|
1964
|
3 |
4 |
p. 313-
1 p.
|
article
|
| 46 |
Metal base transistor pushes back the frequency barrier
|
|
|
1964
|
3 |
4 |
p. 311-
1 p.
|
article
|
| 47 |
Microelectronic devices
|
|
|
1964
|
3 |
4 |
p. 310-
1 p.
|
article
|
| 48 |
Microwave tube repair
|
|
|
1964
|
3 |
4 |
p. 308-
1 p.
|
article
|
| 49 |
Miniaturization in electrical communications
|
|
|
1964
|
3 |
4 |
p. 309-
1 p.
|
article
|
| 50 |
Molecular blocks simplify microcircuits
|
|
|
1964
|
3 |
4 |
p. 313-
1 p.
|
article
|
| 51 |
New ternary semiconducting compounds, Cd4(P, As)2-(Cl, Br, 1)3
|
|
|
1964
|
3 |
4 |
p. 312-
1 p.
|
article
|
| 52 |
On the reliability evaluation based on the time space transformation
|
|
|
1964
|
3 |
4 |
p. 307-308
2 p.
|
article
|
| 53 |
Partial pressure measurements in high and ultra-high vacuum systems, Part 1
|
|
|
1964
|
3 |
4 |
p. 316-
1 p.
|
article
|
| 54 |
Partial pressure measurements in high and ultra-high vacuum systems, Part II
|
|
|
1964
|
3 |
4 |
p. 316-
1 p.
|
article
|
| 55 |
Precision electron welder uses low beam voltage
|
|
|
1964
|
3 |
4 |
p. 320-
1 p.
|
article
|
| 56 |
Prenucleation of lead films with copper, gold and silver
|
|
|
1964
|
3 |
4 |
p. 316-
1 p.
|
article
|
| 57 |
Preparation of epitaxial layers of silicon—III Heavy doping
|
Nielsen, S.
|
|
1964
|
3 |
4 |
p. 233-234
2 p.
|
article
|
| 58 |
Problems in establishing standards for vacuum measurements and in calibrating vacuum gauges
|
|
|
1964
|
3 |
4 |
p. 317-
1 p.
|
article
|
| 59 |
Rearrangement of a flat surface without altering the number of broken bonds
|
|
|
1964
|
3 |
4 |
p. 310-
1 p.
|
article
|
| 60 |
Reliability and redundancy considerations in selecting spacecraft batteries
|
|
|
1964
|
3 |
4 |
p. 308-
1 p.
|
article
|
| 61 |
Reliability—a practical approach
|
|
|
1964
|
3 |
4 |
p. 308-
1 p.
|
article
|
| 62 |
Reliability—a product of AGREE-3 testing
|
|
|
1964
|
3 |
4 |
p. 307-
1 p.
|
article
|
| 63 |
Reliability management—a challenge
|
|
|
1964
|
3 |
4 |
p. 307-
1 p.
|
article
|
| 64 |
Reliability vs. component tolerances in microelectronic circuits
|
|
|
1964
|
3 |
4 |
p. 310-
1 p.
|
article
|
| 65 |
Research at R.R.E.—No. 7. Fabrication techniques for a diffused planar pnp transistor
|
|
|
1964
|
3 |
4 |
p. 313-
1 p.
|
article
|
| 66 |
Research at R.R.E.—No. 5. High-speed programming of an electron beam machine
|
|
|
1964
|
3 |
4 |
p. 319-
1 p.
|
article
|
| 67 |
Single-crystal germanium films by microzone melting
|
|
|
1964
|
3 |
4 |
p. 309-
1 p.
|
article
|
| 68 |
Stress in thin dielectric films
|
|
|
1964
|
3 |
4 |
p. 315-316
2 p.
|
article
|
| 69 |
Study of gallium arsenide surfaces
|
|
|
1964
|
3 |
4 |
p. 311-
1 p.
|
article
|
| 70 |
The bombardment of gold films by inert gas ions
|
|
|
1964
|
3 |
4 |
p. 315-
1 p.
|
article
|
| 71 |
The cost of establishing reliability
|
Yarnell, J.
|
|
1964
|
3 |
4 |
p. 303-305
3 p.
|
article
|
| 72 |
The design of an experimental electron beam machine
|
|
|
1964
|
3 |
4 |
p. 319-
1 p.
|
article
|
| 73 |
The diffusion of tin and selenium in gallium arsenide
|
|
|
1964
|
3 |
4 |
p. 312-313
2 p.
|
article
|
| 74 |
The effect of circuit and component redundancy on the reliability of cryotron circuits
|
Longden, Maureen
|
|
1964
|
3 |
4 |
p. 253-261
9 p.
|
article
|
| 75 |
The frustrating problem of inductors in integrated circuits
|
|
|
1964
|
3 |
4 |
p. 311-
1 p.
|
article
|
| 76 |
Theory of the space-charge-limited surface-channel dielectric triode
|
|
|
1964
|
3 |
4 |
p. 312-
1 p.
|
article
|
| 77 |
Theory of thin-film transistor operation
|
|
|
1964
|
3 |
4 |
p. 318-
1 p.
|
article
|
| 78 |
The preparation of very flat surfaces of silicon by electro-polishing
|
|
|
1964
|
3 |
4 |
p. 313-
1 p.
|
article
|
| 79 |
The silicon insulated-gate field-effect transistor
|
|
|
1964
|
3 |
4 |
p. 309-310
2 p.
|
article
|
| 80 |
The solubilities and distribution coefficients of Zn in GaAs and GaP
|
|
|
1964
|
3 |
4 |
p. 314-
1 p.
|
article
|
| 81 |
Time to failure and availability of paralleled systems with repair
|
|
|
1964
|
3 |
4 |
p. 307-
1 p.
|
article
|
| 82 |
Transient analysis of thin-film structures
|
Lindholm, F.A.
|
|
1964
|
3 |
4 |
p. 209-226
18 p.
|
article
|
| 83 |
Vacuum-deposited thin-film thermocouples for accurate measurement of substrate surface temperature
|
|
|
1964
|
3 |
4 |
p. 316-317
2 p.
|
article
|
| 84 |
Vacuum deposition of resistors
|
|
|
1964
|
3 |
4 |
p. 315-
1 p.
|
article
|
Journal description