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                             226 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 A Bayes reliability growth model for a development testing program 1989
29 4 p. 650-651
2 p.
artikel
2 Accelerated thermal fatigue cycling of surface mounted PWB assemblies in Telecom equipment 1989
29 4 p. 646-
1 p.
artikel
3 A comparison of several component-testing plans for a parallel system 1989
29 4 p. 649-
1 p.
artikel
4 A comparison of the prediction of future order statistics for the 2-parameter gamma distribution 1989
29 4 p. 650-
1 p.
artikel
5 A comparison of the reliability of copper and palladium-silver thick-film crossovers 1989
29 4 p. 660-
1 p.
artikel
6 A conditional probability treatment of strict consecutive-k-out-of-n:F systems Rushdi, Ali M.
1989
29 4 p. 581-586
6 p.
artikel
7 A consideration on spare allocation for a multi-echelon repair system 1989
29 4 p. 649-
1 p.
artikel
8 A k-out-of-n:G redundant vehicle transit system Chung, Who Kee
1989
29 4 p. 555-558
4 p.
artikel
9 A liftoff process using edge detection (LOPED) 1989
29 4 p. 656-
1 p.
artikel
10 A mechanism for two-electron capture at deep level defects in semiconductors 1989
29 4 p. 663-
1 p.
artikel
11 A method for evaluating all the minimal cuts of a graph 1989
29 4 p. 648-
1 p.
artikel
12 A minimizing algorithm for sum of disjoint products 1989
29 4 p. 650-
1 p.
artikel
13 An age-wear dependant model of failure 1989
29 4 p. 650-
1 p.
artikel
14 An analysis of hardware and software availability exemplified on the IBM 3725 communication controller 1989
29 4 p. 652-
1 p.
artikel
15 A new boron implantation model suitable for analytical modeling of threshold voltage of MOSFETS 1989
29 4 p. 658-
1 p.
artikel
16 A new heuristic algorithm for constrained redundancy-optimization in complex systems 1989
29 4 p. 651-
1 p.
artikel
17 A new nonparametric growth model 1989
29 4 p. 650-
1 p.
artikel
18 An inside view of Air Force ground electronic equipment maintenance 1989
29 4 p. 651-
1 p.
artikel
19 A novel technique for detecting lithographic defects 1989
29 4 p. 657-
1 p.
artikel
20 An overview of IC failure analysis 1989
29 4 p. 648-
1 p.
artikel
21 Application of Kikuchi maps for the indexing of electron diffraction patterns from silicon 1989
29 4 p. 661-662
2 p.
artikel
22 Applying photoresist for optimal coatings 1989
29 4 p. 656-
1 p.
artikel
23 A preliminary test estimator of reliability in a life-testing model 1989
29 4 p. 649-
1 p.
artikel
24 Argon plasma treatment effects on SiSiO2 structures 1989
29 4 p. 663-
1 p.
artikel
25 A satellite failure database system 1989
29 4 p. 652-
1 p.
artikel
26 A simple inexpensive method for thickness measurement of thin films 1989
29 4 p. 660-
1 p.
artikel
27 A structured methodology for IC photolithography synthesis in semiconductor manufacturing 1989
29 4 p. 656-657
2 p.
artikel
28 Audio IC circuits manual G.W.A.D.,
1989
29 4 p. 644-
1 p.
artikel
29 4763066 Automatic test equipment for integrated circuits Yeung, PaulK.K.
1989
29 4 p. 666-
1 p.
artikel
30 Bayesian inference on parameter of exponential distribution and its characteristics 1989
29 4 p. 648-
1 p.
artikel
31 Bi-CMOS: combination circuit offers economy and power 1989
29 4 p. 658-
1 p.
artikel
32 Bidirectional blocking junctions in SOI 1989
29 4 p. 658-
1 p.
artikel
33 Buried injector logic, a vertical IIL using deep ion implantation 1989
29 4 p. 659-
1 p.
artikel
34 Calendar of international conferences, symposia, lectures and meetings of interest 1989
29 4 p. 461-465
5 p.
artikel
35 4768195 Chip tester Stoner, DonaldW
1989
29 4 p. 669-
1 p.
artikel
36 Choosing between parametric test instruments and systems 1989
29 4 p. 653-
1 p.
artikel
37 Class 10 robots in PECVD processing 1989
29 4 p. 654-
1 p.
artikel
38 Closed-loop job release control for VLSI circuit manufacturing 1989
29 4 p. 656-
1 p.
artikel
39 Closely packed microstrip lines as very high-speed chip-to-chip interconnects 1989
29 4 p. 656-
1 p.
artikel
40 CMOS active and field device fabrication 1989
29 4 p. 656-
1 p.
artikel
41 CMOS contacts and interconnects 1989
29 4 p. 653-
1 p.
artikel
42 CMOS hot carrier protection with LDD 1989
29 4 p. 663-
1 p.
artikel
43 Comment on “study of acceleration factor on moisture resistance test of plastic encapsulated semiconductor devices” Fokkens, K.
1989
29 4 p. 481-
1 p.
artikel
44 Common-cause failures in repairable systems 1989
29 4 p. 651-
1 p.
artikel
45 Comparative studies of vibrational reliability of electron-conductive adhesive and soldered microjoints 1989
29 4 p. 656-
1 p.
artikel
46 Comparison of two wafer inspection methods for particle monitoring in semiconductor manufacturing 1989
29 4 p. 657-
1 p.
artikel
47 Considerations for the design of an SRAM with SOI technology 1989
29 4 p. 653-
1 p.
artikel
48 Cooperative spirit guides European chipmakers 1989
29 4 p. 653-
1 p.
artikel
49 Correlation between fabrication processes and thermal distribution in medium power MESFETs Canali, C.
1989
29 4 p. 499-504
6 p.
artikel
50 Creep and stress relaxation in solder joints of surface-mounted chip carriers 1989
29 4 p. 647-
1 p.
artikel
51 CSCC for the mean and standard deviation of non-normally distributed life test data Singh, H.R.
1989
29 4 p. 639-641
3 p.
artikel
52 Currents trends in VLSI materials. Part 2: dielectrics 1989
29 4 p. 653-
1 p.
artikel
53 Current trends in VLSI materials. Part 1: conductor systems 1989
29 4 p. 653-
1 p.
artikel
54 Curve tracers advance MOSFET technology 1989
29 4 p. 658-
1 p.
artikel
55 Defect structure of (Ba, Pb)TiO3 positive temperature coefficient ceramics and its influence on electrical properties 1989
29 4 p. 647-
1 p.
artikel
56 Delamination and fracture of thin films 1989
29 4 p. 660-
1 p.
artikel
57 Dependability evaluation of integrated hardware/software systems 1989
29 4 p. 649-
1 p.
artikel
58 Dependence of breakdown voltage on molar concentration of 1,1,1, trichloroethane (TCA) in thermal SiO2 Bhan, R.K.
1989
29 4 p. 537-541
5 p.
artikel
59 Design and performance of a system for VLSI packaging: thermal modeling and characterization 1989
29 4 p. 654-
1 p.
artikel
60 Design automation standards development 1989
29 4 p. 646-
1 p.
artikel
61 Determination of doping profiles for low boron ion implantations in silicon 1989
29 4 p. 659-
1 p.
artikel
62 Diagnosability and distinguishability analysis and its applications 1989
29 4 p. 650-
1 p.
artikel
63 Durability of floppy disks 1989
29 4 p. 646-647
2 p.
artikel
64 Effect of electron-electron collisions on properties of hot electrons 1989
29 4 p. 663-
1 p.
artikel
65 Electrical and microstructural investigation of polysilicon emitter contacts for high-performance bipolar VLSI 1989
29 4 p. 646-
1 p.
artikel
66 Electrical properties of SiSiO2 structures treated in helium plasma 1989
29 4 p. 662-
1 p.
artikel
67 Electrical size effects of thin C54-TiSi2 films grown on silicon substrates 1989
29 4 p. 663-664
2 p.
artikel
68 4779046 Electron beam integrated circuit tester Rouberoi, Jean-Miche
1989
29 4 p. 670-
1 p.
artikel
69 4766372 Electron beam tester Rao, ValluriRM
1989
29 4 p. 666-
1 p.
artikel
70 Electronic structure of strained Si n/Ge n(001) superlattices 1989
29 4 p. 662-
1 p.
artikel
71 Electronic warfare coordination module (EWCM): integrating design, R&M, and logistic support analysis 1989
29 4 p. 652-
1 p.
artikel
72 Estimating integrated-circuit failure rates from field performance 1989
29 4 p. 646-
1 p.
artikel
73 Estimation of probability in strength-stress relationship and its use in structural reliability 1989
29 4 p. 651-
1 p.
artikel
74 Etching of phosphorous doped polysilicon films 1989
29 4 p. 656-
1 p.
artikel
75 Evidence for thermal defect creation in amorphous silicon 1989
29 4 p. 664-
1 p.
artikel
76 Examining competitive submicron lithography 1989
29 4 p. 655-
1 p.
artikel
77 Failure probability of strict consecutive-k-out-of-n:F systems 1989
29 4 p. 648-
1 p.
artikel
78 Failure-time distribution of electronic components 1989
29 4 p. 647-
1 p.
artikel
79 Fast turn around for ASIC photomasks 1989
29 4 p. 656-
1 p.
artikel
80 Fault diagnosis assistant 1989
29 4 p. 645-646
2 p.
artikel
81 Fault-tolerant ICs: the reliability of TMR yield-enhanced ICs 1989
29 4 p. 649-
1 p.
artikel
82 Field acceleration factor for dielectric breakdown of MOS devices Patrikar, R.M.
1989
29 4 p. 603-607
5 p.
artikel
83 First-generation electronic R&M CAE 1989
29 4 p. 652-
1 p.
artikel
84 First uptime and downtime joint distribution of a duplication system with random switching time Mahmoud, M.A.W.
1989
29 4 p. 505-507
3 p.
artikel
85 Fitting and optimal grouping on gamma reliability data 1989
29 4 p. 650-
1 p.
artikel
86 4766670 Full panel electronic packaging structure and method of making same Gazdik, CharlesE
1989
29 4 p. 668-
1 p.
artikel
87 Functional testing of LSI/VLSI chips—a survey 1989
29 4 p. 645-
1 p.
artikel
88 Gallium arsenide ICs promising as fast ICs in the high-frequency range 1989
29 4 p. 658-
1 p.
artikel
89 Gate array playing a main role in ASIC 1989
29 4 p. 657-658
2 p.
artikel
90 Generation currents from interface states in selectively implanted MOS structures 1989
29 4 p. 659-
1 p.
artikel
91 Heavy doping effects in silicon 1989
29 4 p. 662-663
2 p.
artikel
92 Helium leak detection in vacuum systems and IC packages 1989
29 4 p. 657-
1 p.
artikel
93 hFE shift on the reverse bias test for emitter-base junction 1989
29 4 p. 663-
1 p.
artikel
94 4776695 High accuracy film thickness measurement system van Pham, Hung
1989
29 4 p. 669-
1 p.
artikel
95 High density packaging. Connecting the third dimension 1989
29 4 p. 652-
1 p.
artikel
96 High-field drift velocity of electrons in silicon inversion layers 1989
29 4 p. 663-
1 p.
artikel
97 4761767 High reliability integrated circuit memory Ferrant, Richard
1989
29 4 p. 666-
1 p.
artikel
98 High vacuum production in the microelectronics industry G.W.A.D.,
1989
29 4 p. 643-
1 p.
artikel
99 Horizontal die cracking as a yield and reliability problem in integrated circuit devices 1989
29 4 p. 648-
1 p.
artikel
100 4777355 IC card and system for checking the functionality thereof Takahira, Kenichi
1989
29 4 p. 669-670
2 p.
artikel
101 4760575 IC card having fault checking function Watanabe, Hirosh
1989
29 4 p. 665-
1 p.
artikel
102 In-process wafer test and measurement 1989
29 4 p. 655-
1 p.
artikel
103 4764926 Integrated circuits Knight, WilliamL
1989
29 4 p. 666-
1 p.
artikel
104 Inverted gamma as a life distribution Lin, C.T.
1989
29 4 p. 619-626
8 p.
artikel
105 Investigation of the reliability of copper ball bonds to aluminium electrodes 1989
29 4 p. 655-
1 p.
artikel
106 Investigation of thick film technology for microwave applications 1989
29 4 p. 660-
1 p.
artikel
107 Large-scale hybrid integrated circuitry: a case study 1989
29 4 p. 659-660
2 p.
artikel
108 4760335 Large scale integrated circuit test system Lindberg, FrankA
1989
29 4 p. 665-
1 p.
artikel
109 Laser annealing of GaAs implanted with low doses of selenium ions 1989
29 4 p. 658-
1 p.
artikel
110 Life characteristics of systems with dependent failures Bhattacharya, A.
1989
29 4 p. 517-521
5 p.
artikel
111 Life estimation for IC plastic packages under temperature cycling based on fracture mechanics 1989
29 4 p. 646-
1 p.
artikel
112 Low temperature annealing of He+ implanted optical wave-guides in LiNbO3 1989
29 4 p. 659-
1 p.
artikel
113 Mask-making equipment/process drives IBM's IM chips 1989
29 4 p. 656-
1 p.
artikel
114 Materials testing to avoid static problems with microelectronics 1989
29 4 p. 657-
1 p.
artikel
115 Mean time to achieve a failure-free requirement under provisions of spare and repair 1989
29 4 p. 651-
1 p.
artikel
116 Measurement of generation lifetime in thin silicon layers 1989
29 4 p. 662-
1 p.
artikel
117 Mechanical stress reliability factors for packaging GaAs MMIC and LSIC components 1989
29 4 p. 653-654
2 p.
artikel
118 Memo to all Indian authors G.W.A.D.,
1989
29 4 p. 479-
1 p.
artikel
119 4777434 Microelectronic burn-in system Miller, Vernon
1989
29 4 p. 670-
1 p.
artikel
120 Microfluorescence analysis of photoresists and contaminants in LSI processing 1989
29 4 p. 654-
1 p.
artikel
121 MIL-STD-718C fixed time test: effect of redundancy 1989
29 4 p. 651-
1 p.
artikel
122 Miniaturization of electronics and its limits 1989
29 4 p. 653-
1 p.
artikel
123 Modelling of minority-carrier transport in heavily doped silicon emitters 1989
29 4 p. 661-
1 p.
artikel
124 Modelling of the MOS integrated circuit yield associated with random defects of dielectric layers 1989
29 4 p. 646-
1 p.
artikel
125 Monitoring and diagnosis of plasma etch processes 1989
29 4 p. 654-
1 p.
artikel
126 Multichip packaging design for VLSI-based systems 1989
29 4 p. 655-656
2 p.
artikel
127 4771236 Multilayered printed circuit board type resistor isolated tray for stress testing integrated circuits and method of making same Banks, ShermanM
1989
29 4 p. 667-
1 p.
artikel
128 Multiple-threshold-voltage CMOS/SOS by focused ion beams 1989
29 4 p. 659-
1 p.
artikel
129 Neuron-like transient phenomena in silicon p-i-n structures 1989
29 4 p. 662-
1 p.
artikel
130 New directions in CMOS processing 1989
29 4 p. 654-
1 p.
artikel
131 New integral representations of circuit models and elements for the circuit technique for semiconductor device analysis 1989
29 4 p. 657-
1 p.
artikel
132 New profile of ultra low stress resin encapsulants for large chip semiconductor devices 1989
29 4 p. 654-655
2 p.
artikel
133 Nitrogen-fireable resistors; emerging technology for thick-film hybrids 1989
29 4 p. 660-
1 p.
artikel
134 N-type SIPOS and poly-silicon emitters 1989
29 4 p. 662-
1 p.
artikel
135 Off the bathtub onto the roller-coaster curve 1989
29 4 p. 645-
1 p.
artikel
136 On a two-dissimilar-unit standby system with three modes and administrative delay in repair Mokaddis, G.S.
1989
29 4 p. 511-515
5 p.
artikel
137 On Bayes estimation for mixtures of two Weibull distributions under type I censoring Chen, Keh-Wei
1989
29 4 p. 609-617
9 p.
artikel
138 One-chip microcomputer creates new features in the consumer electronic industry 1989
29 4 p. 658-
1 p.
artikel
139 On estimating component reliability for systems with random redundancy levels 1989
29 4 p. 649-
1 p.
artikel
140 On the evaluation of the reliability of k-out-of-n systems 1989
29 4 p. 649-
1 p.
artikel
141 Optical characterization of heavily doped silicon 1989
29 4 p. 662-
1 p.
artikel
142 Optimum ordering policies with random lead times and salvage cost Subramanian, R.
1989
29 4 p. 523-527
5 p.
artikel
143 Optimum policies for a system with imperfect maintenance 1989
29 4 p. 650-
1 p.
artikel
144 Optimum single-sample inspection plans for products sold under free and rebate warranty 1989
29 4 p. 645-
1 p.
artikel
145 Overall reliability evaluation of hierarchical computer networks with dynamic behaviour Kontoleon, J.M.
1989
29 4 p. 483-487
5 p.
artikel
146 Percolation network for thick resistive films 1989
29 4 p. 661-
1 p.
artikel
147 Photomask and reticle blanks 1989
29 4 p. 656-
1 p.
artikel
148 Polyimides in microelectronics 1989
29 4 p. 656-
1 p.
artikel
149 Practical Markov modeling for reliability analysis 1989
29 4 p. 651-652
2 p.
artikel
150 4758785 Pressure control apparatus for use in an integrated circuit testing station Rath, Dale
1989
29 4 p. 665-
1 p.
artikel
151 Pressure dependence of donor levels in GaP: electronic Raman scattering experiments 1989
29 4 p. 661-
1 p.
artikel
152 Process simulation of submicron technologies 1989
29 4 p. 653-
1 p.
artikel
153 Publications, notices, calls for papers, etc. 1989
29 4 p. 467-475
9 p.
artikel
154 Purposes of three-dimensional circuits 1989
29 4 p. 653-
1 p.
artikel
155 Quality across the boards 1989
29 4 p. 646-
1 p.
artikel
156 R&D of three dimensional circuit device getting to the final stage 1989
29 4 p. 658-
1 p.
artikel
157 Reactive and chemically assisted ion beam etching of Si and SiO2 1989
29 4 p. 659-
1 p.
artikel
158 Reliability analysis for a real non-coherent system 1989
29 4 p. 649-
1 p.
artikel
159 Reliability analysis of a k-out-of-n:G vehicle fleet Chung, Who Keé
1989
29 4 p. 549-553
5 p.
artikel
160 Reliability analysis of repairable and non-repairable systems with common-cause failures Chung, Who Kee
1989
29 4 p. 545-547
3 p.
artikel
161 Reliability and quality data in court 1989
29 4 p. 645-
1 p.
artikel
162 Reliability assurance on purchased electronic components 1989
29 4 p. 647-
1 p.
artikel
163 Reliability modeling and evaluation for networks under multiple and fluctuating operational conditions 1989
29 4 p. 648-
1 p.
artikel
164 Reliability modelling and analysis of multiprocessor systems Prasad, E.V.
1989
29 4 p. 533-536
4 p.
artikel
165 Reliability of redundant systems with unreliable switches 1989
29 4 p. 649-
1 p.
artikel
166 Reliability of systems with consecutive minimal cutsets 1989
29 4 p. 648-
1 p.
artikel
167 Reliability of two dependent paralleled devices with application to the electromigration failure phenomenon Wanchoo, Anna-Karin M.
1989
29 4 p. 587-602
16 p.
artikel
168 Reliability optimization with the Lagrange multiplier and branch-and-bound technique 1989
29 4 p. 651-
1 p.
artikel
169 Reliability, thermal and thermochemical characteristics of polymer-on-metal multilayer boards 1989
29 4 p. 661-
1 p.
artikel
170 Reliable high speed bipolar ICs for long distance transmission 1989
29 4 p. 657-
1 p.
artikel
171 Removal processes for damage and contamination after CF4/40%H2 reactive ion etching of silicon 1989
29 4 p. 658-
1 p.
artikel
172 Rheology of silver-filled glass die attach adhesive for high-speed automatic processing 1989
29 4 p. 655-
1 p.
artikel
173 Résines pour microlithographie 1989
29 4 p. 654-
1 p.
artikel
174 SEM and EMPA analysis of impurities related to GaAs substrates and MBE grown GaAs layers 1989
29 4 p. 661-
1 p.
artikel
175 4769744 Semiconductor chip packages having solder layers of enhanced durability Neugebauer, ConstantineA
1989
29 4 p. 667-
1 p.
artikel
176 4768193 Semiconductor memory device having error correction function and incorporating redundancy configuration Takemae, Yoshihiro
1989
29 4 p. 668-
1 p.
artikel
177 4780851 Semiconductor memory device having improved redundant structure Kurakami, Osamu
1989
29 4 p. 670-
1 p.
artikel
178 Sensitivity study of the cumulant method for evaluating reliability measures of two interconnected systems 1989
29 4 p. 648-649
2 p.
artikel
179 Sequential test for the ratio of two constant failure rates 1989
29 4 p. 652-
1 p.
artikel
180 Signal degradation through module pins in VLSI packaging 1989
29 4 p. 657-
1 p.
artikel
181 Silicon dioxide removal in anhydrous HF gas 1989
29 4 p. 657-
1 p.
artikel
182 Silicon heterojunction bipolar transistors with amorphous and microcrystalline emitters 1989
29 4 p. 662-
1 p.
artikel
183 Silicon nitride film as GaAs annealing encapsulant 1989
29 4 p. 659-
1 p.
artikel
184 Simple Bayes test of equality of exponential means 1989
29 4 p. 652-
1 p.
artikel
185 Simple enumeration of minimal tiesets of undirected graph Hasanuddin Ahmad, S.
1989
29 4 p. 509-510
2 p.
artikel
186 SMT: today and tomorrow 1989
29 4 p. 653-
1 p.
artikel
187 Society of reliability engineers newsletter 1989
29 4 p. 477-478
2 p.
artikel
188 Some optimal designs for grouped data in reliability demonstration tests 1989
29 4 p. 649-650
2 p.
artikel
189 Some properties of thin-film SOI MOSFETs 1989
29 4 p. 660-
1 p.
artikel
190 Special series on irradiation enhanced adhesion. Ion beam bombardment effects during film deposition 1989
29 4 p. 659-
1 p.
artikel
191 Stochastic analysis of a parallel system with common-cause failures and critical human errors Dhillon, B.S.
1989
29 4 p. 627-637
11 p.
artikel
192 Stochastic analysis of a two-unit priority cold standby redundant system with administrative delay in repair Singh Joorel, J.P.
1989
29 4 p. 489-491
3 p.
artikel
193 Stochastic analysis of a 2-unit standby system with two failure modes and slow switch Goel, L.R.
1989
29 4 p. 493-498
6 p.
artikel
194 Stochastic behaviour of a man-machine system operating under changing environment subject to a Markov process with two states Cao, Jinhua
1989
29 4 p. 529-531
3 p.
artikel
195 Surface vibrational study of acetylene adsorption on cleaved silicon 1989
29 4 p. 661-
1 p.
artikel
196 4774461 System for inspecting exposure pattern data of semiconductor integrated circuit device Matsui, Shogo
1989
29 4 p. 669-
1 p.
artikel
197 System reliability using binomial failure rate 1989
29 4 p. 650-
1 p.
artikel
198 4766371 Test board for semiconductor packages Moriya, Tadashi
1989
29 4 p. 666-
1 p.
artikel
199 Testing against a change in the NBUE property Klefsjö, Bengt
1989
29 4 p. 559-570
12 p.
artikel
200 Testing high speed VLSI ICs 1989
29 4 p. 646-
1 p.
artikel
201 4768073 Testing integrated circuits Adams, GarryA
1989
29 4 p. 668-
1 p.
artikel
202 The beauty of ‘almost standard’ VLSI 1989
29 4 p. 653-
1 p.
artikel
203 The effects of heat sinking on THB testing of ICs 1989
29 4 p. 647-648
2 p.
artikel
204 The electrical effect of single-chip CMOS packages 1989
29 4 p. 654-
1 p.
artikel
205 The kinetics of thin film resistor stabilisation 1989
29 4 p. 660-661
2 p.
artikel
206 The mechanisms that provide corrosion protection for silicone gel encapsulated chips 1989
29 4 p. 647-
1 p.
artikel
207 The power of certain NBU tests Green, Jack
1989
29 4 p. 571-580
10 p.
artikel
208 Thermal degradation of hydrogenated amorphous silicon (a-Si:H ) solar cells used in consumer appliances 1989
29 4 p. 663-
1 p.
artikel
209 The role of the interfacial layer in bipolar (poly-Si)-emitter transistors 1989
29 4 p. 663-
1 p.
artikel
210 The stability of polycrystalline silicon thin film resistors measured using excess noise Jones, B.K.
1989
29 4 p. 543-544
2 p.
artikel
211 The United States Air Force R&M 2000 process 1989
29 4 p. 651-
1 p.
artikel
212 Thickness and doping dependence of the optical gap in amorphous hydrogenated silicon films 1989
29 4 p. 663-
1 p.
artikel
213 Today's plasma etch chemistries 1989
29 4 p. 653-
1 p.
artikel
214 Total-dose effects of gamma-ray irradiation on CMOS/SIMOX devices 1989
29 4 p. 658-659
2 p.
artikel
215 Transport equations for highly doped devices and hetero-structures 1989
29 4 p. 661-
1 p.
artikel
216 Trends in channel-less gate arrays 1989
29 4 p. 657-
1 p.
artikel
217 Triple diffused transistor for digital IC applications 1989
29 4 p. 657-
1 p.
artikel
218 Using internal testing program in testing the telephone subset integrated circuit 1989
29 4 p. 652-
1 p.
artikel
219 Very sensitive detection for LSI's hot spot using liquid crystal 1989
29 4 p. 657-
1 p.
artikel
220 VLSI and AI are getting closer 1989
29 4 p. 653-
1 p.
artikel
221 VLSI chip interconnection technology using stacked solder bumps 1989
29 4 p. 655-
1 p.
artikel
222 VLSI packaging and assembly 1989
29 4 p. 655-
1 p.
artikel
223 4772846 Wafer alignment and positioning apparatus for chip testing by voltage contrast electron microscopy Reeds, John
1989
29 4 p. 667-
1 p.
artikel
224 Wafer processing and materials 1989
29 4 p. 656-
1 p.
artikel
225 World class contamination control practices 1989
29 4 p. 652-
1 p.
artikel
226 Yield model for in-line integrated circuit production control 1989
29 4 p. 656-
1 p.
artikel
                             226 gevonden resultaten
 
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