nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
A Bayes explanation of an apparent failure rate paradox
|
|
|
1986 |
26 |
4 |
p. 789- 1 p. |
artikel |
2 |
Acceleration factors for thin gate oxide stressing
|
|
|
1986 |
26 |
4 |
p. 796- 1 p. |
artikel |
3 |
A comparison of three methods for calculating lower confidence limits on system reliability using Binomial component data
|
|
|
1986 |
26 |
4 |
p. 788- 1 p. |
artikel |
4 |
A computerised system for deriving symbolic unreliability expression
|
Jamil, A.T.M. |
|
1986 |
26 |
4 |
p. 753-762 10 p. |
artikel |
5 |
A conditional probability approach to reliability with common-cause failures
|
|
|
1986 |
26 |
4 |
p. 785- 1 p. |
artikel |
6 |
A critical review of VLSI die-attachment in high reliability applications
|
|
|
1986 |
26 |
4 |
p. 783- 1 p. |
artikel |
7 |
4551672 Active probe
|
Hadley, Russell |
|
1986 |
26 |
4 |
p. 799- 1 p. |
artikel |
8 |
Addressable inverter matrix for process and device characterization
|
|
|
1986 |
26 |
4 |
p. 784- 1 p. |
artikel |
9 |
Advanced methods of ion implant monitoring using optical dosimetry
|
|
|
1986 |
26 |
4 |
p. 798- 1 p. |
artikel |
10 |
Advanced step and repeat aligner for VLSI
|
|
|
1986 |
26 |
4 |
p. 793- 1 p. |
artikel |
11 |
Advances in data management for implantation process control
|
|
|
1986 |
26 |
4 |
p. 797- 1 p. |
artikel |
12 |
Advances in diffusion furnace technology
|
|
|
1986 |
26 |
4 |
p. 791- 1 p. |
artikel |
13 |
Advances in sheet resistance measurements for ion implant monitoring
|
|
|
1986 |
26 |
4 |
p. 798- 1 p. |
artikel |
14 |
Advantages of magnetron etching
|
|
|
1986 |
26 |
4 |
p. 793- 1 p. |
artikel |
15 |
A full-scaled NMOS technology for VLSI circuits
|
|
|
1986 |
26 |
4 |
p. 793- 1 p. |
artikel |
16 |
Amorphous-crystalline silicon isotype heterojunction: electrostatic potential distribution and C(V) curves
|
|
|
1986 |
26 |
4 |
p. 796- 1 p. |
artikel |
17 |
An algorithm to determine wafer flatness
|
|
|
1986 |
26 |
4 |
p. 791- 1 p. |
artikel |
18 |
Analysis of long term reliability of plated-through holes in multilayer interconnection boards Part A: Stress analyses and material characterization
|
Vecchio, K.S. |
|
1986 |
26 |
4 |
p. 715-732 18 p. |
artikel |
19 |
Analysis of long term reliability of plated-through holes in multilayer interconnection boards Part B: Fatigue results and fracture mechanisms
|
Vecchio, K.S. |
|
1986 |
26 |
4 |
p. 733-751 19 p. |
artikel |
20 |
Analysis of one-server n-unit parallel system subject to random service
|
Gopalan, M.N. |
|
1986 |
26 |
4 |
p. 651-655 5 p. |
artikel |
21 |
Analysis of one-server two-unit parallel system subject to degradation
|
Gopalan, M.N. |
|
1986 |
26 |
4 |
p. 657-664 8 p. |
artikel |
22 |
Analytical solutions for high-dose shallow arsenic profiles in silicon
|
|
|
1986 |
26 |
4 |
p. 796- 1 p. |
artikel |
23 |
An empirical procedure for estimating the parameters of a mixed exponential life testing model
|
|
|
1986 |
26 |
4 |
p. 786- 1 p. |
artikel |
24 |
A new generalization of the class of NBU distributions
|
|
|
1986 |
26 |
4 |
p. 787-788 2 p. |
artikel |
25 |
A new set of semiconductor equations for computer simulation of submicron devices
|
|
|
1986 |
26 |
4 |
p. 792- 1 p. |
artikel |
26 |
A new technique in minimal path and cut-set evaluation
|
|
|
1986 |
26 |
4 |
p. 789- 1 p. |
artikel |
27 |
An improved technique for the preparation of thin films of compound semiconductors
|
Arora, R.K. |
|
1986 |
26 |
4 |
p. 625-626 2 p. |
artikel |
28 |
A non-aging screen to prevent wearout of ultra-thin dielectrics
|
|
|
1986 |
26 |
4 |
p. 782- 1 p. |
artikel |
29 |
A philosophy for allocating component reliabilities in a network
|
|
|
1986 |
26 |
4 |
p. 781- 1 p. |
artikel |
30 |
Applications of plasma enhanced chemical vapor deposition in VLSI
|
|
|
1986 |
26 |
4 |
p. 790- 1 p. |
artikel |
31 |
A precise scaling length for depleted regions
|
|
|
1986 |
26 |
4 |
p. 796- 1 p. |
artikel |
32 |
A quantitative physical model for time-dependent breakdown in SiO2
|
|
|
1986 |
26 |
4 |
p. 796- 1 p. |
artikel |
33 |
A review of plasma processing fundamentals
|
|
|
1986 |
26 |
4 |
p. 792- 1 p. |
artikel |
34 |
A system reliability model with classes of failures
|
|
|
1986 |
26 |
4 |
p. 784- 1 p. |
artikel |
35 |
A thick film conductive microline fabrication technique
|
|
|
1986 |
26 |
4 |
p. 796-797 2 p. |
artikel |
36 |
Automatic process control for VLSI linewidth
|
|
|
1986 |
26 |
4 |
p. 792-793 2 p. |
artikel |
37 |
Automatic x-ray alignment system for submicron VLSI lithography
|
|
|
1986 |
26 |
4 |
p. 793- 1 p. |
artikel |
38 |
Automating inter-equipment transport
|
|
|
1986 |
26 |
4 |
p. 793- 1 p. |
artikel |
39 |
Availability analysis for RP-10 nuclear reactor trip module
|
Roca, JoséLuis |
|
1986 |
26 |
4 |
p. 611-617 7 p. |
artikel |
40 |
Availability analysis of 3-state systems
|
|
|
1986 |
26 |
4 |
p. 785- 1 p. |
artikel |
41 |
Bayesian reliability evaluation of computer systems
|
|
|
1986 |
26 |
4 |
p. 787- 1 p. |
artikel |
42 |
Bayes nonparametric estimation of time-dependent failure rate
|
|
|
1986 |
26 |
4 |
p. 784- 1 p. |
artikel |
43 |
Boolean difference techniques for time-sequence and common-cause analysis of fault-trees
|
|
|
1986 |
26 |
4 |
p. 786- 1 p. |
artikel |
44 |
Borophosphosilicate glasses for integrated circuits
|
|
|
1986 |
26 |
4 |
p. 792- 1 p. |
artikel |
45 |
British standard BS 5760
|
G.W.A.D., |
|
1986 |
26 |
4 |
p. 780- 1 p. |
artikel |
46 |
Calendar of International Conferences, Symposia, Lectures and Meetings of Interest
|
|
|
1986 |
26 |
4 |
p. 605-607 3 p. |
artikel |
47 |
4552267 Ceramic semiconductor package chip prevention structure and method
|
Layher, FrancisW |
|
1986 |
26 |
4 |
p. 800- 1 p. |
artikel |
48 |
Characterization of heteroepitaxial silicon on sapphire by UV reffectometry
|
|
|
1986 |
26 |
4 |
p. 795- 1 p. |
artikel |
49 |
Chemical analysis of electronic gases and volatile reagents for device processing
|
|
|
1986 |
26 |
4 |
p. 791- 1 p. |
artikel |
50 |
Chromatography as a tool in the characterization and quality control of resist materials
|
|
|
1986 |
26 |
4 |
p. 793- 1 p. |
artikel |
51 |
Clean rooms for VLSI fabrication
|
|
|
1986 |
26 |
4 |
p. 791- 1 p. |
artikel |
52 |
Complete exploration of the silicon gap at the Si-SiO2 interface of MIS tunnel diodes using the conductance technique at various temperatures and illumination levels
|
|
|
1986 |
26 |
4 |
p. 795- 1 p. |
artikel |
53 |
Computer aided stress modeling for optimizing plastic package reliability
|
|
|
1986 |
26 |
4 |
p. 782- 1 p. |
artikel |
54 |
Confidence intervals for system failure rates; a literature review
|
|
|
1986 |
26 |
4 |
p. 785- 1 p. |
artikel |
55 |
Consecutive- k-out-of-n:F system with sequential failures
|
|
|
1986 |
26 |
4 |
p. 787- 1 p. |
artikel |
56 |
Contamination study of plasma etching
|
|
|
1986 |
26 |
4 |
p. 791- 1 p. |
artikel |
57 |
Contrast enhanced lithography
|
|
|
1986 |
26 |
4 |
p. 794- 1 p. |
artikel |
58 |
Cosmic ray effects in microelectronics
|
|
|
1986 |
26 |
4 |
p. 790- 1 p. |
artikel |
59 |
Cut-set intersections and node partitions
|
|
|
1986 |
26 |
4 |
p. 789- 1 p. |
artikel |
60 |
CVD tungsten and tungsten silicide for VLSI applications
|
|
|
1986 |
26 |
4 |
p. 790- 1 p. |
artikel |
61 |
Deep trapping of implanted Na+ and Li+ ions near the Si/SiO2 interface in metal-oxide-silicon structures
|
|
|
1986 |
26 |
4 |
p. 797- 1 p. |
artikel |
62 |
Defect test structures for characterization of VLSI technologies
|
|
|
1986 |
26 |
4 |
p. 788- 1 p. |
artikel |
63 |
Design and performance of “1.25-μm” CMOS for digital applications
|
|
|
1986 |
26 |
4 |
p. 791- 1 p. |
artikel |
64 |
Determining electromigration kinetics of thin film interconnects
|
|
|
1986 |
26 |
4 |
p. 796- 1 p. |
artikel |
65 |
Diamon blade technology in die separation
|
|
|
1986 |
26 |
4 |
p. 793- 1 p. |
artikel |
66 |
Dissolution rate measurements
|
|
|
1986 |
26 |
4 |
p. 794- 1 p. |
artikel |
67 |
Distribution of LRT for testing the equality of several 2-parameter exponential distributions
|
|
|
1986 |
26 |
4 |
p. 783- 1 p. |
artikel |
68 |
Double-crystal x-ray diffraction analysis of low-temperature ion implanted silicon
|
|
|
1986 |
26 |
4 |
p. 797- 1 p. |
artikel |
69 |
Dry etch resistance of metal-free and halogen-substituted resist materials
|
|
|
1986 |
26 |
4 |
p. 797- 1 p. |
artikel |
70 |
Effects of heavy metal contamination from corrosive gas and dopant handling equipment in silicon wafer processing
|
|
|
1986 |
26 |
4 |
p. 795- 1 p. |
artikel |
71 |
Elastic light scattering techniques for semiconductor technology
|
|
|
1986 |
26 |
4 |
p. 793- 1 p. |
artikel |
72 |
Electrical reliability of silver filled epoxies for die attach
|
|
|
1986 |
26 |
4 |
p. 783- 1 p. |
artikel |
73 |
Electromigration-induced short circuit failure
|
|
|
1986 |
26 |
4 |
p. 781- 1 p. |
artikel |
74 |
Electron beam processing for MOS devices with shallow junctions
|
|
|
1986 |
26 |
4 |
p. 798- 1 p. |
artikel |
75 |
4553435 Elevated transient temperature leak test for unstable microelectronic packages
|
Goldfarb, Harold |
|
1986 |
26 |
4 |
p. 801- 1 p. |
artikel |
76 |
Estimation of Weibull shape-parameters for two independent competing risks
|
|
|
1986 |
26 |
4 |
p. 786- 1 p. |
artikel |
77 |
Evaluation of reliability and M.T.T.F. of a complex system by Boolean Function technique
|
Gupta, P.P. |
|
1986 |
26 |
4 |
p. 627-631 5 p. |
artikel |
78 |
Exact reliability formulas for linear and circular consecutive-k-out-of-n:F systems
|
|
|
1986 |
26 |
4 |
p. 789- 1 p. |
artikel |
79 |
Exotic materials for integrated circuits
|
|
|
1986 |
26 |
4 |
p. 790- 1 p. |
artikel |
80 |
Extension of the Duane plotting technique
|
|
|
1986 |
26 |
4 |
p. 788- 1 p. |
artikel |
81 |
Failure analysis of ECL memories by means of voltage contrast measurements and advanced preparation techniques
|
|
|
1986 |
26 |
4 |
p. 784- 1 p. |
artikel |
82 |
Failure mechanism study of GaAs MODFET devices and integrated circuits
|
|
|
1986 |
26 |
4 |
p. 782- 1 p. |
artikel |
83 |
Fault diagnosis of analog circuits
|
|
|
1986 |
26 |
4 |
p. 785-786 2 p. |
artikel |
84 |
FEDSS—A 2D semiconductor fabrication process simulator
|
|
|
1986 |
26 |
4 |
p. 794- 1 p. |
artikel |
85 |
Formation of droplets on Si surfaces bombarded by In from a capillary type liquid metal ion source
|
|
|
1986 |
26 |
4 |
p. 798- 1 p. |
artikel |
86 |
FTANS—a computer program for probabilistic analysis of non-coherent structures
|
|
|
1986 |
26 |
4 |
p. 790- 1 p. |
artikel |
87 |
Gate-array design. A hierarchical development trend
|
|
|
1986 |
26 |
4 |
p. 791- 1 p. |
artikel |
88 |
Generating continuous random variates from a hazard rate function
|
|
|
1986 |
26 |
4 |
p. 787- 1 p. |
artikel |
89 |
Guest editorial
|
Verwey, J.F. |
|
1986 |
26 |
4 |
p. 609- 1 p. |
artikel |
90 |
Hafnium-n type silicon Schottky barriers
|
|
|
1986 |
26 |
4 |
p. 795- 1 p. |
artikel |
91 |
Hazard model for repaired system
|
|
|
1986 |
26 |
4 |
p. 789- 1 p. |
artikel |
92 |
4553192 High density planar interconnected integrated circuit package
|
Babuka, Robert |
|
1986 |
26 |
4 |
p. 800- 1 p. |
artikel |
93 |
High performance packaging
|
|
|
1986 |
26 |
4 |
p. 791- 1 p. |
artikel |
94 |
High voltage screening of GaAs power FETs: effect on burn-in yield and modes of catastrophic device failure
|
|
|
1986 |
26 |
4 |
p. 781- 1 p. |
artikel |
95 |
HPD prediction intervals for Rayleigh distribution
|
|
|
1986 |
26 |
4 |
p. 788- 1 p. |
artikel |
96 |
Hybrid circuit manufacturing update
|
|
|
1986 |
26 |
4 |
p. 796- 1 p. |
artikel |
97 |
Hybrid reliability modeling of fault-tolerant computer systems
|
|
|
1986 |
26 |
4 |
p. 785- 1 p. |
artikel |
98 |
IC-design automation strides into silicon-compilation era
|
|
|
1986 |
26 |
4 |
p. 792- 1 p. |
artikel |
99 |
IC production lines move closer to full automation
|
|
|
1986 |
26 |
4 |
p. 792- 1 p. |
artikel |
100 |
ID slicing technology for large diameters
|
|
|
1986 |
26 |
4 |
p. 794- 1 p. |
artikel |
101 |
Improvements in reliability of VLSI integrated circuits
|
|
|
1986 |
26 |
4 |
p. 782- 1 p. |
artikel |
102 |
Integration of reliability and capacity in performance measure of a telecommunication network
|
|
|
1986 |
26 |
4 |
p. 784- 1 p. |
artikel |
103 |
Introducing dependency into IC yield models
|
|
|
1986 |
26 |
4 |
p. 783- 1 p. |
artikel |
104 |
Introduction to VLSI systems
|
G.W.A.D., |
|
1986 |
26 |
4 |
p. 779- 1 p. |
artikel |
105 |
Investigation into GaAs power MESFET surface degradation
|
|
|
1986 |
26 |
4 |
p. 783- 1 p. |
artikel |
106 |
Ion distribution near a mask edge with arbitrary shape for VLSI IC applications
|
|
|
1986 |
26 |
4 |
p. 798- 1 p. |
artikel |
107 |
Iterative method for steady state reliability analysis of complex Markov systems
|
|
|
1986 |
26 |
4 |
p. 786- 1 p. |
artikel |
108 |
Kerf test structure designs for process and device characterization
|
|
|
1986 |
26 |
4 |
p. 781- 1 p. |
artikel |
109 |
Laser-induced chemical vapor deposition
|
|
|
1986 |
26 |
4 |
p. 797- 1 p. |
artikel |
110 |
Low pressure plasma etching with magnetic confinement
|
|
|
1986 |
26 |
4 |
p. 793- 1 p. |
artikel |
111 |
Materials and technology of wafering
|
|
|
1986 |
26 |
4 |
p. 793- 1 p. |
artikel |
112 |
Maximum likelihood estimation for the 2-parameter Weibull distribution based in interval-data
|
|
|
1986 |
26 |
4 |
p. 787- 1 p. |
artikel |
113 |
Mean time to achieve a failure-free requirement with imperfect repair
|
|
|
1986 |
26 |
4 |
p. 786- 1 p. |
artikel |
114 |
Measuring and modeling minority carrier transport in heavily doped silicon
|
|
|
1986 |
26 |
4 |
p. 795-796 2 p. |
artikel |
115 |
4556840 Method for testing electronic assemblies
|
Russell, RobertJ |
|
1986 |
26 |
4 |
p. 801-802 2 p. |
artikel |
116 |
4553225 Method of testing IC memories
|
Ohe, Yoshikazu |
|
1986 |
26 |
4 |
p. 801- 1 p. |
artikel |
117 |
Microscopic models of Hg+, Auo and Pt− isoelectronic interstitial impurities in silicon
|
|
|
1986 |
26 |
4 |
p. 795- 1 p. |
artikel |
118 |
4554506 Modular test probe
|
Faure, LouisH |
|
1986 |
26 |
4 |
p. 801- 1 p. |
artikel |
119 |
Moisture resistance degradation of plastic LSIs by reflow soldering
|
|
|
1986 |
26 |
4 |
p. 781-782 2 p. |
artikel |
120 |
Moisture resistance of polyimide multilevel interconnect LSIs
|
|
|
1986 |
26 |
4 |
p. 783- 1 p. |
artikel |
121 |
Monte Carlo study of two-dimensional electron gas transport in Si-MOS devices
|
|
|
1986 |
26 |
4 |
p. 796- 1 p. |
artikel |
122 |
M.T.T.F. and availability evaluation of a two-unit, two-state, standby redundant complex system with constant human failure
|
Gupta, P.P. |
|
1986 |
26 |
4 |
p. 647-650 4 p. |
artikel |
123 |
4551788 Multi-chip carrier array
|
Daniel, RobertP |
|
1986 |
26 |
4 |
p. 799- 1 p. |
artikel |
124 |
New filler-induced failure mechanism in plastic encapsulated VLSI dynamic MOS memories
|
|
|
1986 |
26 |
4 |
p. 781- 1 p. |
artikel |
125 |
Numerical solution of integral equations for reliability quantification
|
|
|
1986 |
26 |
4 |
p. 786-787 2 p. |
artikel |
126 |
On-chip testing of embedded p.l.a.s.
|
|
|
1986 |
26 |
4 |
p. 784- 1 p. |
artikel |
127 |
On reliability evaluation by network decomposition
|
|
|
1986 |
26 |
4 |
p. 784- 1 p. |
artikel |
128 |
On shallow-deep instability of impurity level in semiconductors
|
|
|
1986 |
26 |
4 |
p. 795- 1 p. |
artikel |
129 |
On the availability of 1-out-of-2 standby systems
|
|
|
1986 |
26 |
4 |
p. 787- 1 p. |
artikel |
130 |
On yield-optimizing design rules
|
|
|
1986 |
26 |
4 |
p. 787- 1 p. |
artikel |
131 |
Operational behaviour of a power plant consisting of three generators by B.F. technique
|
Gupta, P.P. |
|
1986 |
26 |
4 |
p. 633-640 8 p. |
artikel |
132 |
Operational life testing of integrated circuits
|
|
|
1986 |
26 |
4 |
p. 782- 1 p. |
artikel |
133 |
Optimal age-replacement policy for equipment monitored by a stochastically failing indicator
|
|
|
1986 |
26 |
4 |
p. 785- 1 p. |
artikel |
134 |
Optimal consecutive-k-out-of-n:F component sequencing
|
|
|
1986 |
26 |
4 |
p. 787- 1 p. |
artikel |
135 |
Optimal consecutive-2-out-of-n:F component sequencing
|
|
|
1986 |
26 |
4 |
p. 785- 1 p. |
artikel |
136 |
Optimal repair of a 2-component series-system with partially repairable components
|
|
|
1986 |
26 |
4 |
p. 789-790 2 p. |
artikel |
137 |
Optimal selection methods for failure and repair rates using nomographs
|
|
|
1986 |
26 |
4 |
p. 789- 1 p. |
artikel |
138 |
Optimal software release policies for a non-homogeneous software error detection rate model
|
Yamada, Shigeru |
|
1986 |
26 |
4 |
p. 691-702 12 p. |
artikel |
139 |
4553049 Oscillation prevention during testing of integrated circuit logic chips
|
Cha, Charles |
|
1986 |
26 |
4 |
p. 800- 1 p. |
artikel |
140 |
Overlay accuracy for VLSI devices
|
|
|
1986 |
26 |
4 |
p. 792- 1 p. |
artikel |
141 |
Oxygen behaviour in liquid phase expitaxial GaAs
|
|
|
1986 |
26 |
4 |
p. 795- 1 p. |
artikel |
142 |
4551745 Package for semiconductor device
|
Watanabe, Hisashi |
|
1986 |
26 |
4 |
p. 799- 1 p. |
artikel |
143 |
Packages for ultra-high speed GaAs ICs
|
|
|
1986 |
26 |
4 |
p. 794- 1 p. |
artikel |
144 |
Packaging changes make automatic testing tougher, more costly
|
|
|
1986 |
26 |
4 |
p. 791- 1 p. |
artikel |
145 |
Parametric programming applied to reliability optimization problems
|
|
|
1986 |
26 |
4 |
p. 788- 1 p. |
artikel |
146 |
Part 2b—deposited dielectrics for VLSI
|
|
|
1986 |
26 |
4 |
p. 794- 1 p. |
artikel |
147 |
Physical problems in microelectronics
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G.W.A.D., |
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1986 |
26 |
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p. 778- 1 p. |
artikel |
148 |
Polycide etching for VLSI applications
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1986 |
26 |
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p. 790- 1 p. |
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149 |
Positive resist development model for linewidth control
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1986 |
26 |
4 |
p. 790- 1 p. |
artikel |
150 |
Power devices are in the chips
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1986 |
26 |
4 |
p. 794- 1 p. |
artikel |
151 |
Predicting the data retention lifetime of a lithium carbon mono-fluoride battery connected to a ZEROPOWER ™
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1986 |
26 |
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p. 783- 1 p. |
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152 |
Present status of arsenic planar diffusion sources
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1986 |
26 |
4 |
p. 795- 1 p. |
artikel |
153 |
4551908 Process of forming electrodes and interconnections on silicon semiconductor devices
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Nagasawa, Eij |
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1986 |
26 |
4 |
p. 800- 1 p. |
artikel |
154 |
Production RIE-II
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1986 |
26 |
4 |
p. 791- 1 p. |
artikel |
155 |
4556975 Programmable redundancy circuit
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Smith, TeresaB |
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1986 |
26 |
4 |
p. 802- 1 p. |
artikel |
156 |
Progress in materials and packaging
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1986 |
26 |
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p. 794- 1 p. |
artikel |
157 |
Proportional hazards models and MIL-HDBK-217
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Landers, Thomas L. |
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1986 |
26 |
4 |
p. 763-771 9 p. |
artikel |
158 |
Qualification of integrated circuits
|
Wurnik, Franz |
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1986 |
26 |
4 |
p. 665-677 13 p. |
artikel |
159 |
Random variate generation for Monte Carlo experiments
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1986 |
26 |
4 |
p. 786- 1 p. |
artikel |
160 |
Rapid annealing technology for future VLSI
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1986 |
26 |
4 |
p. 792- 1 p. |
artikel |
161 |
Recursive algorithm for reliability evaluation of k-out-of-n: G system
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1986 |
26 |
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p. 789- 1 p. |
artikel |
162 |
Refractory metals silicides
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1986 |
26 |
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p. 791- 1 p. |
artikel |
163 |
Relationship between tearing strength and electrical resistance in welded microjoints
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1986 |
26 |
4 |
p. 781- 1 p. |
artikel |
164 |
Reliability and failure analyses of computing systems
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1986 |
26 |
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p. 787- 1 p. |
artikel |
165 |
Reliability and M.T.T.F. analysis of a power plant consisting of three generators by Boolean Function technique
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Gupta, P.P. |
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1986 |
26 |
4 |
p. 641-645 5 p. |
artikel |
166 |
Reliability assurance during the production of telecommunications equipment
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1986 |
26 |
4 |
p. 784- 1 p. |
artikel |
167 |
Reliability-equivalent-separation of a node
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1986 |
26 |
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p. 788-789 2 p. |
artikel |
168 |
Reliability evaluation and optimization of redundant dynamic systems
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1986 |
26 |
4 |
p. 789- 1 p. |
artikel |
169 |
Reliability evaluation of electric power systems in alternating environment
|
Dhillon, B.S. |
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1986 |
26 |
4 |
p. 679-690 12 p. |
artikel |
170 |
Resist modeling and profile simulation
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1986 |
26 |
4 |
p. 790- 1 p. |
artikel |
171 |
Review of single wafer reactor technology for device processing
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1986 |
26 |
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p. 792- 1 p. |
artikel |
172 |
RIE of GaAs in chlorinated plasma
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1986 |
26 |
4 |
p. 791- 1 p. |
artikel |
173 |
Robot transfer system for wafer processing
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1986 |
26 |
4 |
p. 790-791 2 p. |
artikel |
174 |
Role of miniaturization in the improvement of reliability
|
Arora, R.K. |
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1986 |
26 |
4 |
p. 773-775 3 p. |
artikel |
175 |
Silicon epitaxial processing techniques for ultra-low defect densities
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1986 |
26 |
4 |
p. 782- 1 p. |
artikel |
176 |
Silicon wafers engineered for ULSI circuits
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1986 |
26 |
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p. 794- 1 p. |
artikel |
177 |
Smart power ICs move from promise to production
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1986 |
26 |
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p. 794- 1 p. |
artikel |
178 |
Software reliability—theory and practice
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1986 |
26 |
4 |
p. 787- 1 p. |
artikel |
179 |
SOI-CMOS 4K SRAM via oxygen implants
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1986 |
26 |
4 |
p. 797- 1 p. |
artikel |
180 |
Some general measures for a complex n-unit standby redundant system
|
Natarajan, R. |
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1986 |
26 |
4 |
p. 619-623 5 p. |
artikel |
181 |
Some graphical techniques for estimating Weibull confidence intervals
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1986 |
26 |
4 |
p. 787- 1 p. |
artikel |
182 |
Stress induced voids in aluminum interconnects during IC processing
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1986 |
26 |
4 |
p. 782- 1 p. |
artikel |
183 |
Strict consecutive-k-out-of-n:F systems
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1986 |
26 |
4 |
p. 786- 1 p. |
artikel |
184 |
Techniques of wafer lapping and polishing
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1986 |
26 |
4 |
p. 794- 1 p. |
artikel |
185 |
Testing equality of binomial parameters based on inverse sampling
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1986 |
26 |
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p. 786- 1 p. |
artikel |
186 |
Testing particle generation by a wafer handling robot
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1986 |
26 |
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p. 791- 1 p. |
artikel |
187 |
The annealing of 1 MeV implantations of boron in silicon
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1986 |
26 |
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p. 797- 1 p. |
artikel |
188 |
The application of statistical regression to yield modeling
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1986 |
26 |
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p. 789- 1 p. |
artikel |
189 |
The CAE workstation in semicustom design
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1986 |
26 |
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p. 791- 1 p. |
artikel |
190 |
The dependency model: a tool for calculating system effectiveness
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1986 |
26 |
4 |
p. 788- 1 p. |
artikel |
191 |
The design and analysis of VLSI circuits
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G.W.A.D., |
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1986 |
26 |
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p. 777- 1 p. |
artikel |
192 |
The DIP may take its final bows
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1986 |
26 |
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p. 790- 1 p. |
artikel |
193 |
The far infrared absorption spectra of bound excitons in silicon
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1986 |
26 |
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p. 795- 1 p. |
artikel |
194 |
The gases of plasma etching: silicon-based technology
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1986 |
26 |
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p. 792- 1 p. |
artikel |
195 |
The identification and elimination of human contamination in the manufacture of ICs
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1986 |
26 |
4 |
p. 782- 1 p. |
artikel |
196 |
The influence of stress on aluminum conductor life
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1986 |
26 |
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p. 783- 1 p. |
artikel |
197 |
The linear software reliability model and uniform testing
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1986 |
26 |
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p. 784-785 2 p. |
artikel |
198 |
The submicron lithography labyrinth
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1986 |
26 |
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p. 791-792 2 p. |
artikel |
199 |
Thin film technology for advanced semiconductors—Part I. Silicon epitaxy: a critical technology
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1986 |
26 |
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p. 796- 1 p. |
artikel |
200 |
Tighter VLSI geometries create problems with hot carriers
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1986 |
26 |
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p. 790- 1 p. |
artikel |
201 |
Transconductance degradation in VLSI devices
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1986 |
26 |
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p. 783- 1 p. |
artikel |
202 |
Two-dimensional device simulation program: 2DP
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1986 |
26 |
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p. 792- 1 p. |
artikel |
203 |
Undersea transmission-system reliability with laser-diode standby-redundant optical repeaters
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1986 |
26 |
4 |
p. 785- 1 p. |
artikel |
204 |
Units of equipment available using cannibalization for repair-part support
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1986 |
26 |
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p. 784- 1 p. |
artikel |
205 |
Upper management and quality—some experiences
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1986 |
26 |
4 |
p. 786- 1 p. |
artikel |
206 |
Using Petri nets for performance analysis of two-terminal parallel-series communication networks
|
Hura, Gurdeep S. |
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1986 |
26 |
4 |
p. 703-714 12 p. |
artikel |
207 |
Using the decomposition tree for directed-network reliability computation
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1986 |
26 |
4 |
p. 785- 1 p. |
artikel |
208 |
VLSI-chip test system tests itself at board level
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1986 |
26 |
4 |
p. 794- 1 p. |
artikel |
209 |
VLSI wiring capacitance
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1986 |
26 |
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p. 794- 1 p. |
artikel |
210 |
Wafer charging and beam interactions in ion implantation
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1986 |
26 |
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p. 797- 1 p. |
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211 |
Wafer dicing: on the threshold of automation
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1986 |
26 |
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p. 792- 1 p. |
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212 |
Wafer inspection for defects
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1986 |
26 |
4 |
p. 794- 1 p. |
artikel |
213 |
Warranty policies for non-repairable items under risk aversion
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1986 |
26 |
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p. 781- 1 p. |
artikel |
214 |
XPS analysis of GaAs-surface quality affecting interelectrode material migration
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1986 |
26 |
4 |
p. 790- 1 p. |
artikel |
215 |
X-ray lithography with negative resists
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1986 |
26 |
4 |
p. 790- 1 p. |
artikel |