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                             215 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 A Bayes explanation of an apparent failure rate paradox 1986
26 4 p. 789-
1 p.
artikel
2 Acceleration factors for thin gate oxide stressing 1986
26 4 p. 796-
1 p.
artikel
3 A comparison of three methods for calculating lower confidence limits on system reliability using Binomial component data 1986
26 4 p. 788-
1 p.
artikel
4 A computerised system for deriving symbolic unreliability expression Jamil, A.T.M.
1986
26 4 p. 753-762
10 p.
artikel
5 A conditional probability approach to reliability with common-cause failures 1986
26 4 p. 785-
1 p.
artikel
6 A critical review of VLSI die-attachment in high reliability applications 1986
26 4 p. 783-
1 p.
artikel
7 4551672 Active probe Hadley, Russell
1986
26 4 p. 799-
1 p.
artikel
8 Addressable inverter matrix for process and device characterization 1986
26 4 p. 784-
1 p.
artikel
9 Advanced methods of ion implant monitoring using optical dosimetry 1986
26 4 p. 798-
1 p.
artikel
10 Advanced step and repeat aligner for VLSI 1986
26 4 p. 793-
1 p.
artikel
11 Advances in data management for implantation process control 1986
26 4 p. 797-
1 p.
artikel
12 Advances in diffusion furnace technology 1986
26 4 p. 791-
1 p.
artikel
13 Advances in sheet resistance measurements for ion implant monitoring 1986
26 4 p. 798-
1 p.
artikel
14 Advantages of magnetron etching 1986
26 4 p. 793-
1 p.
artikel
15 A full-scaled NMOS technology for VLSI circuits 1986
26 4 p. 793-
1 p.
artikel
16 Amorphous-crystalline silicon isotype heterojunction: electrostatic potential distribution and C(V) curves 1986
26 4 p. 796-
1 p.
artikel
17 An algorithm to determine wafer flatness 1986
26 4 p. 791-
1 p.
artikel
18 Analysis of long term reliability of plated-through holes in multilayer interconnection boards Part A: Stress analyses and material characterization Vecchio, K.S.
1986
26 4 p. 715-732
18 p.
artikel
19 Analysis of long term reliability of plated-through holes in multilayer interconnection boards Part B: Fatigue results and fracture mechanisms Vecchio, K.S.
1986
26 4 p. 733-751
19 p.
artikel
20 Analysis of one-server n-unit parallel system subject to random service Gopalan, M.N.
1986
26 4 p. 651-655
5 p.
artikel
21 Analysis of one-server two-unit parallel system subject to degradation Gopalan, M.N.
1986
26 4 p. 657-664
8 p.
artikel
22 Analytical solutions for high-dose shallow arsenic profiles in silicon 1986
26 4 p. 796-
1 p.
artikel
23 An empirical procedure for estimating the parameters of a mixed exponential life testing model 1986
26 4 p. 786-
1 p.
artikel
24 A new generalization of the class of NBU distributions 1986
26 4 p. 787-788
2 p.
artikel
25 A new set of semiconductor equations for computer simulation of submicron devices 1986
26 4 p. 792-
1 p.
artikel
26 A new technique in minimal path and cut-set evaluation 1986
26 4 p. 789-
1 p.
artikel
27 An improved technique for the preparation of thin films of compound semiconductors Arora, R.K.
1986
26 4 p. 625-626
2 p.
artikel
28 A non-aging screen to prevent wearout of ultra-thin dielectrics 1986
26 4 p. 782-
1 p.
artikel
29 A philosophy for allocating component reliabilities in a network 1986
26 4 p. 781-
1 p.
artikel
30 Applications of plasma enhanced chemical vapor deposition in VLSI 1986
26 4 p. 790-
1 p.
artikel
31 A precise scaling length for depleted regions 1986
26 4 p. 796-
1 p.
artikel
32 A quantitative physical model for time-dependent breakdown in SiO2 1986
26 4 p. 796-
1 p.
artikel
33 A review of plasma processing fundamentals 1986
26 4 p. 792-
1 p.
artikel
34 A system reliability model with classes of failures 1986
26 4 p. 784-
1 p.
artikel
35 A thick film conductive microline fabrication technique 1986
26 4 p. 796-797
2 p.
artikel
36 Automatic process control for VLSI linewidth 1986
26 4 p. 792-793
2 p.
artikel
37 Automatic x-ray alignment system for submicron VLSI lithography 1986
26 4 p. 793-
1 p.
artikel
38 Automating inter-equipment transport 1986
26 4 p. 793-
1 p.
artikel
39 Availability analysis for RP-10 nuclear reactor trip module Roca, JoséLuis
1986
26 4 p. 611-617
7 p.
artikel
40 Availability analysis of 3-state systems 1986
26 4 p. 785-
1 p.
artikel
41 Bayesian reliability evaluation of computer systems 1986
26 4 p. 787-
1 p.
artikel
42 Bayes nonparametric estimation of time-dependent failure rate 1986
26 4 p. 784-
1 p.
artikel
43 Boolean difference techniques for time-sequence and common-cause analysis of fault-trees 1986
26 4 p. 786-
1 p.
artikel
44 Borophosphosilicate glasses for integrated circuits 1986
26 4 p. 792-
1 p.
artikel
45 British standard BS 5760 G.W.A.D.,
1986
26 4 p. 780-
1 p.
artikel
46 Calendar of International Conferences, Symposia, Lectures and Meetings of Interest 1986
26 4 p. 605-607
3 p.
artikel
47 4552267 Ceramic semiconductor package chip prevention structure and method Layher, FrancisW
1986
26 4 p. 800-
1 p.
artikel
48 Characterization of heteroepitaxial silicon on sapphire by UV reffectometry 1986
26 4 p. 795-
1 p.
artikel
49 Chemical analysis of electronic gases and volatile reagents for device processing 1986
26 4 p. 791-
1 p.
artikel
50 Chromatography as a tool in the characterization and quality control of resist materials 1986
26 4 p. 793-
1 p.
artikel
51 Clean rooms for VLSI fabrication 1986
26 4 p. 791-
1 p.
artikel
52 Complete exploration of the silicon gap at the Si-SiO2 interface of MIS tunnel diodes using the conductance technique at various temperatures and illumination levels 1986
26 4 p. 795-
1 p.
artikel
53 Computer aided stress modeling for optimizing plastic package reliability 1986
26 4 p. 782-
1 p.
artikel
54 Confidence intervals for system failure rates; a literature review 1986
26 4 p. 785-
1 p.
artikel
55 Consecutive- k-out-of-n:F system with sequential failures 1986
26 4 p. 787-
1 p.
artikel
56 Contamination study of plasma etching 1986
26 4 p. 791-
1 p.
artikel
57 Contrast enhanced lithography 1986
26 4 p. 794-
1 p.
artikel
58 Cosmic ray effects in microelectronics 1986
26 4 p. 790-
1 p.
artikel
59 Cut-set intersections and node partitions 1986
26 4 p. 789-
1 p.
artikel
60 CVD tungsten and tungsten silicide for VLSI applications 1986
26 4 p. 790-
1 p.
artikel
61 Deep trapping of implanted Na+ and Li+ ions near the Si/SiO2 interface in metal-oxide-silicon structures 1986
26 4 p. 797-
1 p.
artikel
62 Defect test structures for characterization of VLSI technologies 1986
26 4 p. 788-
1 p.
artikel
63 Design and performance of “1.25-μm” CMOS for digital applications 1986
26 4 p. 791-
1 p.
artikel
64 Determining electromigration kinetics of thin film interconnects 1986
26 4 p. 796-
1 p.
artikel
65 Diamon blade technology in die separation 1986
26 4 p. 793-
1 p.
artikel
66 Dissolution rate measurements 1986
26 4 p. 794-
1 p.
artikel
67 Distribution of LRT for testing the equality of several 2-parameter exponential distributions 1986
26 4 p. 783-
1 p.
artikel
68 Double-crystal x-ray diffraction analysis of low-temperature ion implanted silicon 1986
26 4 p. 797-
1 p.
artikel
69 Dry etch resistance of metal-free and halogen-substituted resist materials 1986
26 4 p. 797-
1 p.
artikel
70 Effects of heavy metal contamination from corrosive gas and dopant handling equipment in silicon wafer processing 1986
26 4 p. 795-
1 p.
artikel
71 Elastic light scattering techniques for semiconductor technology 1986
26 4 p. 793-
1 p.
artikel
72 Electrical reliability of silver filled epoxies for die attach 1986
26 4 p. 783-
1 p.
artikel
73 Electromigration-induced short circuit failure 1986
26 4 p. 781-
1 p.
artikel
74 Electron beam processing for MOS devices with shallow junctions 1986
26 4 p. 798-
1 p.
artikel
75 4553435 Elevated transient temperature leak test for unstable microelectronic packages Goldfarb, Harold
1986
26 4 p. 801-
1 p.
artikel
76 Estimation of Weibull shape-parameters for two independent competing risks 1986
26 4 p. 786-
1 p.
artikel
77 Evaluation of reliability and M.T.T.F. of a complex system by Boolean Function technique Gupta, P.P.
1986
26 4 p. 627-631
5 p.
artikel
78 Exact reliability formulas for linear and circular consecutive-k-out-of-n:F systems 1986
26 4 p. 789-
1 p.
artikel
79 Exotic materials for integrated circuits 1986
26 4 p. 790-
1 p.
artikel
80 Extension of the Duane plotting technique 1986
26 4 p. 788-
1 p.
artikel
81 Failure analysis of ECL memories by means of voltage contrast measurements and advanced preparation techniques 1986
26 4 p. 784-
1 p.
artikel
82 Failure mechanism study of GaAs MODFET devices and integrated circuits 1986
26 4 p. 782-
1 p.
artikel
83 Fault diagnosis of analog circuits 1986
26 4 p. 785-786
2 p.
artikel
84 FEDSS—A 2D semiconductor fabrication process simulator 1986
26 4 p. 794-
1 p.
artikel
85 Formation of droplets on Si surfaces bombarded by In from a capillary type liquid metal ion source 1986
26 4 p. 798-
1 p.
artikel
86 FTANS—a computer program for probabilistic analysis of non-coherent structures 1986
26 4 p. 790-
1 p.
artikel
87 Gate-array design. A hierarchical development trend 1986
26 4 p. 791-
1 p.
artikel
88 Generating continuous random variates from a hazard rate function 1986
26 4 p. 787-
1 p.
artikel
89 Guest editorial Verwey, J.F.
1986
26 4 p. 609-
1 p.
artikel
90 Hafnium-n type silicon Schottky barriers 1986
26 4 p. 795-
1 p.
artikel
91 Hazard model for repaired system 1986
26 4 p. 789-
1 p.
artikel
92 4553192 High density planar interconnected integrated circuit package Babuka, Robert
1986
26 4 p. 800-
1 p.
artikel
93 High performance packaging 1986
26 4 p. 791-
1 p.
artikel
94 High voltage screening of GaAs power FETs: effect on burn-in yield and modes of catastrophic device failure 1986
26 4 p. 781-
1 p.
artikel
95 HPD prediction intervals for Rayleigh distribution 1986
26 4 p. 788-
1 p.
artikel
96 Hybrid circuit manufacturing update 1986
26 4 p. 796-
1 p.
artikel
97 Hybrid reliability modeling of fault-tolerant computer systems 1986
26 4 p. 785-
1 p.
artikel
98 IC-design automation strides into silicon-compilation era 1986
26 4 p. 792-
1 p.
artikel
99 IC production lines move closer to full automation 1986
26 4 p. 792-
1 p.
artikel
100 ID slicing technology for large diameters 1986
26 4 p. 794-
1 p.
artikel
101 Improvements in reliability of VLSI integrated circuits 1986
26 4 p. 782-
1 p.
artikel
102 Integration of reliability and capacity in performance measure of a telecommunication network 1986
26 4 p. 784-
1 p.
artikel
103 Introducing dependency into IC yield models 1986
26 4 p. 783-
1 p.
artikel
104 Introduction to VLSI systems G.W.A.D.,
1986
26 4 p. 779-
1 p.
artikel
105 Investigation into GaAs power MESFET surface degradation 1986
26 4 p. 783-
1 p.
artikel
106 Ion distribution near a mask edge with arbitrary shape for VLSI IC applications 1986
26 4 p. 798-
1 p.
artikel
107 Iterative method for steady state reliability analysis of complex Markov systems 1986
26 4 p. 786-
1 p.
artikel
108 Kerf test structure designs for process and device characterization 1986
26 4 p. 781-
1 p.
artikel
109 Laser-induced chemical vapor deposition 1986
26 4 p. 797-
1 p.
artikel
110 Low pressure plasma etching with magnetic confinement 1986
26 4 p. 793-
1 p.
artikel
111 Materials and technology of wafering 1986
26 4 p. 793-
1 p.
artikel
112 Maximum likelihood estimation for the 2-parameter Weibull distribution based in interval-data 1986
26 4 p. 787-
1 p.
artikel
113 Mean time to achieve a failure-free requirement with imperfect repair 1986
26 4 p. 786-
1 p.
artikel
114 Measuring and modeling minority carrier transport in heavily doped silicon 1986
26 4 p. 795-796
2 p.
artikel
115 4556840 Method for testing electronic assemblies Russell, RobertJ
1986
26 4 p. 801-802
2 p.
artikel
116 4553225 Method of testing IC memories Ohe, Yoshikazu
1986
26 4 p. 801-
1 p.
artikel
117 Microscopic models of Hg+, Auo and Pt− isoelectronic interstitial impurities in silicon 1986
26 4 p. 795-
1 p.
artikel
118 4554506 Modular test probe Faure, LouisH
1986
26 4 p. 801-
1 p.
artikel
119 Moisture resistance degradation of plastic LSIs by reflow soldering 1986
26 4 p. 781-782
2 p.
artikel
120 Moisture resistance of polyimide multilevel interconnect LSIs 1986
26 4 p. 783-
1 p.
artikel
121 Monte Carlo study of two-dimensional electron gas transport in Si-MOS devices 1986
26 4 p. 796-
1 p.
artikel
122 M.T.T.F. and availability evaluation of a two-unit, two-state, standby redundant complex system with constant human failure Gupta, P.P.
1986
26 4 p. 647-650
4 p.
artikel
123 4551788 Multi-chip carrier array Daniel, RobertP
1986
26 4 p. 799-
1 p.
artikel
124 New filler-induced failure mechanism in plastic encapsulated VLSI dynamic MOS memories 1986
26 4 p. 781-
1 p.
artikel
125 Numerical solution of integral equations for reliability quantification 1986
26 4 p. 786-787
2 p.
artikel
126 On-chip testing of embedded p.l.a.s. 1986
26 4 p. 784-
1 p.
artikel
127 On reliability evaluation by network decomposition 1986
26 4 p. 784-
1 p.
artikel
128 On shallow-deep instability of impurity level in semiconductors 1986
26 4 p. 795-
1 p.
artikel
129 On the availability of 1-out-of-2 standby systems 1986
26 4 p. 787-
1 p.
artikel
130 On yield-optimizing design rules 1986
26 4 p. 787-
1 p.
artikel
131 Operational behaviour of a power plant consisting of three generators by B.F. technique Gupta, P.P.
1986
26 4 p. 633-640
8 p.
artikel
132 Operational life testing of integrated circuits 1986
26 4 p. 782-
1 p.
artikel
133 Optimal age-replacement policy for equipment monitored by a stochastically failing indicator 1986
26 4 p. 785-
1 p.
artikel
134 Optimal consecutive-k-out-of-n:F component sequencing 1986
26 4 p. 787-
1 p.
artikel
135 Optimal consecutive-2-out-of-n:F component sequencing 1986
26 4 p. 785-
1 p.
artikel
136 Optimal repair of a 2-component series-system with partially repairable components 1986
26 4 p. 789-790
2 p.
artikel
137 Optimal selection methods for failure and repair rates using nomographs 1986
26 4 p. 789-
1 p.
artikel
138 Optimal software release policies for a non-homogeneous software error detection rate model Yamada, Shigeru
1986
26 4 p. 691-702
12 p.
artikel
139 4553049 Oscillation prevention during testing of integrated circuit logic chips Cha, Charles
1986
26 4 p. 800-
1 p.
artikel
140 Overlay accuracy for VLSI devices 1986
26 4 p. 792-
1 p.
artikel
141 Oxygen behaviour in liquid phase expitaxial GaAs 1986
26 4 p. 795-
1 p.
artikel
142 4551745 Package for semiconductor device Watanabe, Hisashi
1986
26 4 p. 799-
1 p.
artikel
143 Packages for ultra-high speed GaAs ICs 1986
26 4 p. 794-
1 p.
artikel
144 Packaging changes make automatic testing tougher, more costly 1986
26 4 p. 791-
1 p.
artikel
145 Parametric programming applied to reliability optimization problems 1986
26 4 p. 788-
1 p.
artikel
146 Part 2b—deposited dielectrics for VLSI 1986
26 4 p. 794-
1 p.
artikel
147 Physical problems in microelectronics G.W.A.D.,
1986
26 4 p. 778-
1 p.
artikel
148 Polycide etching for VLSI applications 1986
26 4 p. 790-
1 p.
artikel
149 Positive resist development model for linewidth control 1986
26 4 p. 790-
1 p.
artikel
150 Power devices are in the chips 1986
26 4 p. 794-
1 p.
artikel
151 Predicting the data retention lifetime of a lithium carbon mono-fluoride battery connected to a ZEROPOWER ™ 1986
26 4 p. 783-
1 p.
artikel
152 Present status of arsenic planar diffusion sources 1986
26 4 p. 795-
1 p.
artikel
153 4551908 Process of forming electrodes and interconnections on silicon semiconductor devices Nagasawa, Eij
1986
26 4 p. 800-
1 p.
artikel
154 Production RIE-II 1986
26 4 p. 791-
1 p.
artikel
155 4556975 Programmable redundancy circuit Smith, TeresaB
1986
26 4 p. 802-
1 p.
artikel
156 Progress in materials and packaging 1986
26 4 p. 794-
1 p.
artikel
157 Proportional hazards models and MIL-HDBK-217 Landers, Thomas L.
1986
26 4 p. 763-771
9 p.
artikel
158 Qualification of integrated circuits Wurnik, Franz
1986
26 4 p. 665-677
13 p.
artikel
159 Random variate generation for Monte Carlo experiments 1986
26 4 p. 786-
1 p.
artikel
160 Rapid annealing technology for future VLSI 1986
26 4 p. 792-
1 p.
artikel
161 Recursive algorithm for reliability evaluation of k-out-of-n: G system 1986
26 4 p. 789-
1 p.
artikel
162 Refractory metals silicides 1986
26 4 p. 791-
1 p.
artikel
163 Relationship between tearing strength and electrical resistance in welded microjoints 1986
26 4 p. 781-
1 p.
artikel
164 Reliability and failure analyses of computing systems 1986
26 4 p. 787-
1 p.
artikel
165 Reliability and M.T.T.F. analysis of a power plant consisting of three generators by Boolean Function technique Gupta, P.P.
1986
26 4 p. 641-645
5 p.
artikel
166 Reliability assurance during the production of telecommunications equipment 1986
26 4 p. 784-
1 p.
artikel
167 Reliability-equivalent-separation of a node 1986
26 4 p. 788-789
2 p.
artikel
168 Reliability evaluation and optimization of redundant dynamic systems 1986
26 4 p. 789-
1 p.
artikel
169 Reliability evaluation of electric power systems in alternating environment Dhillon, B.S.
1986
26 4 p. 679-690
12 p.
artikel
170 Resist modeling and profile simulation 1986
26 4 p. 790-
1 p.
artikel
171 Review of single wafer reactor technology for device processing 1986
26 4 p. 792-
1 p.
artikel
172 RIE of GaAs in chlorinated plasma 1986
26 4 p. 791-
1 p.
artikel
173 Robot transfer system for wafer processing 1986
26 4 p. 790-791
2 p.
artikel
174 Role of miniaturization in the improvement of reliability Arora, R.K.
1986
26 4 p. 773-775
3 p.
artikel
175 Silicon epitaxial processing techniques for ultra-low defect densities 1986
26 4 p. 782-
1 p.
artikel
176 Silicon wafers engineered for ULSI circuits 1986
26 4 p. 794-
1 p.
artikel
177 Smart power ICs move from promise to production 1986
26 4 p. 794-
1 p.
artikel
178 Software reliability—theory and practice 1986
26 4 p. 787-
1 p.
artikel
179 SOI-CMOS 4K SRAM via oxygen implants 1986
26 4 p. 797-
1 p.
artikel
180 Some general measures for a complex n-unit standby redundant system Natarajan, R.
1986
26 4 p. 619-623
5 p.
artikel
181 Some graphical techniques for estimating Weibull confidence intervals 1986
26 4 p. 787-
1 p.
artikel
182 Stress induced voids in aluminum interconnects during IC processing 1986
26 4 p. 782-
1 p.
artikel
183 Strict consecutive-k-out-of-n:F systems 1986
26 4 p. 786-
1 p.
artikel
184 Techniques of wafer lapping and polishing 1986
26 4 p. 794-
1 p.
artikel
185 Testing equality of binomial parameters based on inverse sampling 1986
26 4 p. 786-
1 p.
artikel
186 Testing particle generation by a wafer handling robot 1986
26 4 p. 791-
1 p.
artikel
187 The annealing of 1 MeV implantations of boron in silicon 1986
26 4 p. 797-
1 p.
artikel
188 The application of statistical regression to yield modeling 1986
26 4 p. 789-
1 p.
artikel
189 The CAE workstation in semicustom design 1986
26 4 p. 791-
1 p.
artikel
190 The dependency model: a tool for calculating system effectiveness 1986
26 4 p. 788-
1 p.
artikel
191 The design and analysis of VLSI circuits G.W.A.D.,
1986
26 4 p. 777-
1 p.
artikel
192 The DIP may take its final bows 1986
26 4 p. 790-
1 p.
artikel
193 The far infrared absorption spectra of bound excitons in silicon 1986
26 4 p. 795-
1 p.
artikel
194 The gases of plasma etching: silicon-based technology 1986
26 4 p. 792-
1 p.
artikel
195 The identification and elimination of human contamination in the manufacture of ICs 1986
26 4 p. 782-
1 p.
artikel
196 The influence of stress on aluminum conductor life 1986
26 4 p. 783-
1 p.
artikel
197 The linear software reliability model and uniform testing 1986
26 4 p. 784-785
2 p.
artikel
198 The submicron lithography labyrinth 1986
26 4 p. 791-792
2 p.
artikel
199 Thin film technology for advanced semiconductors—Part I. Silicon epitaxy: a critical technology 1986
26 4 p. 796-
1 p.
artikel
200 Tighter VLSI geometries create problems with hot carriers 1986
26 4 p. 790-
1 p.
artikel
201 Transconductance degradation in VLSI devices 1986
26 4 p. 783-
1 p.
artikel
202 Two-dimensional device simulation program: 2DP 1986
26 4 p. 792-
1 p.
artikel
203 Undersea transmission-system reliability with laser-diode standby-redundant optical repeaters 1986
26 4 p. 785-
1 p.
artikel
204 Units of equipment available using cannibalization for repair-part support 1986
26 4 p. 784-
1 p.
artikel
205 Upper management and quality—some experiences 1986
26 4 p. 786-
1 p.
artikel
206 Using Petri nets for performance analysis of two-terminal parallel-series communication networks Hura, Gurdeep S.
1986
26 4 p. 703-714
12 p.
artikel
207 Using the decomposition tree for directed-network reliability computation 1986
26 4 p. 785-
1 p.
artikel
208 VLSI-chip test system tests itself at board level 1986
26 4 p. 794-
1 p.
artikel
209 VLSI wiring capacitance 1986
26 4 p. 794-
1 p.
artikel
210 Wafer charging and beam interactions in ion implantation 1986
26 4 p. 797-
1 p.
artikel
211 Wafer dicing: on the threshold of automation 1986
26 4 p. 792-
1 p.
artikel
212 Wafer inspection for defects 1986
26 4 p. 794-
1 p.
artikel
213 Warranty policies for non-repairable items under risk aversion 1986
26 4 p. 781-
1 p.
artikel
214 XPS analysis of GaAs-surface quality affecting interelectrode material migration 1986
26 4 p. 790-
1 p.
artikel
215 X-ray lithography with negative resists 1986
26 4 p. 790-
1 p.
artikel
                             215 gevonden resultaten
 
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