| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A Bayes explanation of an apparent failure rate paradox
|
|
|
1986
|
26 |
4 |
p. 789-
1 p.
|
artikel
|
| 2 |
Acceleration factors for thin gate oxide stressing
|
|
|
1986
|
26 |
4 |
p. 796-
1 p.
|
artikel
|
| 3 |
A comparison of three methods for calculating lower confidence limits on system reliability using Binomial component data
|
|
|
1986
|
26 |
4 |
p. 788-
1 p.
|
artikel
|
| 4 |
A computerised system for deriving symbolic unreliability expression
|
Jamil, A.T.M.
|
|
1986
|
26 |
4 |
p. 753-762
10 p.
|
artikel
|
| 5 |
A conditional probability approach to reliability with common-cause failures
|
|
|
1986
|
26 |
4 |
p. 785-
1 p.
|
artikel
|
| 6 |
A critical review of VLSI die-attachment in high reliability applications
|
|
|
1986
|
26 |
4 |
p. 783-
1 p.
|
artikel
|
| 7 |
4551672 Active probe
|
Hadley, Russell
|
|
1986
|
26 |
4 |
p. 799-
1 p.
|
artikel
|
| 8 |
Addressable inverter matrix for process and device characterization
|
|
|
1986
|
26 |
4 |
p. 784-
1 p.
|
artikel
|
| 9 |
Advanced methods of ion implant monitoring using optical dosimetry
|
|
|
1986
|
26 |
4 |
p. 798-
1 p.
|
artikel
|
| 10 |
Advanced step and repeat aligner for VLSI
|
|
|
1986
|
26 |
4 |
p. 793-
1 p.
|
artikel
|
| 11 |
Advances in data management for implantation process control
|
|
|
1986
|
26 |
4 |
p. 797-
1 p.
|
artikel
|
| 12 |
Advances in diffusion furnace technology
|
|
|
1986
|
26 |
4 |
p. 791-
1 p.
|
artikel
|
| 13 |
Advances in sheet resistance measurements for ion implant monitoring
|
|
|
1986
|
26 |
4 |
p. 798-
1 p.
|
artikel
|
| 14 |
Advantages of magnetron etching
|
|
|
1986
|
26 |
4 |
p. 793-
1 p.
|
artikel
|
| 15 |
A full-scaled NMOS technology for VLSI circuits
|
|
|
1986
|
26 |
4 |
p. 793-
1 p.
|
artikel
|
| 16 |
Amorphous-crystalline silicon isotype heterojunction: electrostatic potential distribution and C(V) curves
|
|
|
1986
|
26 |
4 |
p. 796-
1 p.
|
artikel
|
| 17 |
An algorithm to determine wafer flatness
|
|
|
1986
|
26 |
4 |
p. 791-
1 p.
|
artikel
|
| 18 |
Analysis of long term reliability of plated-through holes in multilayer interconnection boards Part A: Stress analyses and material characterization
|
Vecchio, K.S.
|
|
1986
|
26 |
4 |
p. 715-732
18 p.
|
artikel
|
| 19 |
Analysis of long term reliability of plated-through holes in multilayer interconnection boards Part B: Fatigue results and fracture mechanisms
|
Vecchio, K.S.
|
|
1986
|
26 |
4 |
p. 733-751
19 p.
|
artikel
|
| 20 |
Analysis of one-server n-unit parallel system subject to random service
|
Gopalan, M.N.
|
|
1986
|
26 |
4 |
p. 651-655
5 p.
|
artikel
|
| 21 |
Analysis of one-server two-unit parallel system subject to degradation
|
Gopalan, M.N.
|
|
1986
|
26 |
4 |
p. 657-664
8 p.
|
artikel
|
| 22 |
Analytical solutions for high-dose shallow arsenic profiles in silicon
|
|
|
1986
|
26 |
4 |
p. 796-
1 p.
|
artikel
|
| 23 |
An empirical procedure for estimating the parameters of a mixed exponential life testing model
|
|
|
1986
|
26 |
4 |
p. 786-
1 p.
|
artikel
|
| 24 |
A new generalization of the class of NBU distributions
|
|
|
1986
|
26 |
4 |
p. 787-788
2 p.
|
artikel
|
| 25 |
A new set of semiconductor equations for computer simulation of submicron devices
|
|
|
1986
|
26 |
4 |
p. 792-
1 p.
|
artikel
|
| 26 |
A new technique in minimal path and cut-set evaluation
|
|
|
1986
|
26 |
4 |
p. 789-
1 p.
|
artikel
|
| 27 |
An improved technique for the preparation of thin films of compound semiconductors
|
Arora, R.K.
|
|
1986
|
26 |
4 |
p. 625-626
2 p.
|
artikel
|
| 28 |
A non-aging screen to prevent wearout of ultra-thin dielectrics
|
|
|
1986
|
26 |
4 |
p. 782-
1 p.
|
artikel
|
| 29 |
A philosophy for allocating component reliabilities in a network
|
|
|
1986
|
26 |
4 |
p. 781-
1 p.
|
artikel
|
| 30 |
Applications of plasma enhanced chemical vapor deposition in VLSI
|
|
|
1986
|
26 |
4 |
p. 790-
1 p.
|
artikel
|
| 31 |
A precise scaling length for depleted regions
|
|
|
1986
|
26 |
4 |
p. 796-
1 p.
|
artikel
|
| 32 |
A quantitative physical model for time-dependent breakdown in SiO2
|
|
|
1986
|
26 |
4 |
p. 796-
1 p.
|
artikel
|
| 33 |
A review of plasma processing fundamentals
|
|
|
1986
|
26 |
4 |
p. 792-
1 p.
|
artikel
|
| 34 |
A system reliability model with classes of failures
|
|
|
1986
|
26 |
4 |
p. 784-
1 p.
|
artikel
|
| 35 |
A thick film conductive microline fabrication technique
|
|
|
1986
|
26 |
4 |
p. 796-797
2 p.
|
artikel
|
| 36 |
Automatic process control for VLSI linewidth
|
|
|
1986
|
26 |
4 |
p. 792-793
2 p.
|
artikel
|
| 37 |
Automatic x-ray alignment system for submicron VLSI lithography
|
|
|
1986
|
26 |
4 |
p. 793-
1 p.
|
artikel
|
| 38 |
Automating inter-equipment transport
|
|
|
1986
|
26 |
4 |
p. 793-
1 p.
|
artikel
|
| 39 |
Availability analysis for RP-10 nuclear reactor trip module
|
Roca, JoséLuis
|
|
1986
|
26 |
4 |
p. 611-617
7 p.
|
artikel
|
| 40 |
Availability analysis of 3-state systems
|
|
|
1986
|
26 |
4 |
p. 785-
1 p.
|
artikel
|
| 41 |
Bayesian reliability evaluation of computer systems
|
|
|
1986
|
26 |
4 |
p. 787-
1 p.
|
artikel
|
| 42 |
Bayes nonparametric estimation of time-dependent failure rate
|
|
|
1986
|
26 |
4 |
p. 784-
1 p.
|
artikel
|
| 43 |
Boolean difference techniques for time-sequence and common-cause analysis of fault-trees
|
|
|
1986
|
26 |
4 |
p. 786-
1 p.
|
artikel
|
| 44 |
Borophosphosilicate glasses for integrated circuits
|
|
|
1986
|
26 |
4 |
p. 792-
1 p.
|
artikel
|
| 45 |
British standard BS 5760
|
G.W.A.D.,
|
|
1986
|
26 |
4 |
p. 780-
1 p.
|
artikel
|
| 46 |
Calendar of International Conferences, Symposia, Lectures and Meetings of Interest
|
|
|
1986
|
26 |
4 |
p. 605-607
3 p.
|
artikel
|
| 47 |
4552267 Ceramic semiconductor package chip prevention structure and method
|
Layher, FrancisW
|
|
1986
|
26 |
4 |
p. 800-
1 p.
|
artikel
|
| 48 |
Characterization of heteroepitaxial silicon on sapphire by UV reffectometry
|
|
|
1986
|
26 |
4 |
p. 795-
1 p.
|
artikel
|
| 49 |
Chemical analysis of electronic gases and volatile reagents for device processing
|
|
|
1986
|
26 |
4 |
p. 791-
1 p.
|
artikel
|
| 50 |
Chromatography as a tool in the characterization and quality control of resist materials
|
|
|
1986
|
26 |
4 |
p. 793-
1 p.
|
artikel
|
| 51 |
Clean rooms for VLSI fabrication
|
|
|
1986
|
26 |
4 |
p. 791-
1 p.
|
artikel
|
| 52 |
Complete exploration of the silicon gap at the Si-SiO2 interface of MIS tunnel diodes using the conductance technique at various temperatures and illumination levels
|
|
|
1986
|
26 |
4 |
p. 795-
1 p.
|
artikel
|
| 53 |
Computer aided stress modeling for optimizing plastic package reliability
|
|
|
1986
|
26 |
4 |
p. 782-
1 p.
|
artikel
|
| 54 |
Confidence intervals for system failure rates; a literature review
|
|
|
1986
|
26 |
4 |
p. 785-
1 p.
|
artikel
|
| 55 |
Consecutive- k-out-of-n:F system with sequential failures
|
|
|
1986
|
26 |
4 |
p. 787-
1 p.
|
artikel
|
| 56 |
Contamination study of plasma etching
|
|
|
1986
|
26 |
4 |
p. 791-
1 p.
|
artikel
|
| 57 |
Contrast enhanced lithography
|
|
|
1986
|
26 |
4 |
p. 794-
1 p.
|
artikel
|
| 58 |
Cosmic ray effects in microelectronics
|
|
|
1986
|
26 |
4 |
p. 790-
1 p.
|
artikel
|
| 59 |
Cut-set intersections and node partitions
|
|
|
1986
|
26 |
4 |
p. 789-
1 p.
|
artikel
|
| 60 |
CVD tungsten and tungsten silicide for VLSI applications
|
|
|
1986
|
26 |
4 |
p. 790-
1 p.
|
artikel
|
| 61 |
Deep trapping of implanted Na+ and Li+ ions near the Si/SiO2 interface in metal-oxide-silicon structures
|
|
|
1986
|
26 |
4 |
p. 797-
1 p.
|
artikel
|
| 62 |
Defect test structures for characterization of VLSI technologies
|
|
|
1986
|
26 |
4 |
p. 788-
1 p.
|
artikel
|
| 63 |
Design and performance of “1.25-μm” CMOS for digital applications
|
|
|
1986
|
26 |
4 |
p. 791-
1 p.
|
artikel
|
| 64 |
Determining electromigration kinetics of thin film interconnects
|
|
|
1986
|
26 |
4 |
p. 796-
1 p.
|
artikel
|
| 65 |
Diamon blade technology in die separation
|
|
|
1986
|
26 |
4 |
p. 793-
1 p.
|
artikel
|
| 66 |
Dissolution rate measurements
|
|
|
1986
|
26 |
4 |
p. 794-
1 p.
|
artikel
|
| 67 |
Distribution of LRT for testing the equality of several 2-parameter exponential distributions
|
|
|
1986
|
26 |
4 |
p. 783-
1 p.
|
artikel
|
| 68 |
Double-crystal x-ray diffraction analysis of low-temperature ion implanted silicon
|
|
|
1986
|
26 |
4 |
p. 797-
1 p.
|
artikel
|
| 69 |
Dry etch resistance of metal-free and halogen-substituted resist materials
|
|
|
1986
|
26 |
4 |
p. 797-
1 p.
|
artikel
|
| 70 |
Effects of heavy metal contamination from corrosive gas and dopant handling equipment in silicon wafer processing
|
|
|
1986
|
26 |
4 |
p. 795-
1 p.
|
artikel
|
| 71 |
Elastic light scattering techniques for semiconductor technology
|
|
|
1986
|
26 |
4 |
p. 793-
1 p.
|
artikel
|
| 72 |
Electrical reliability of silver filled epoxies for die attach
|
|
|
1986
|
26 |
4 |
p. 783-
1 p.
|
artikel
|
| 73 |
Electromigration-induced short circuit failure
|
|
|
1986
|
26 |
4 |
p. 781-
1 p.
|
artikel
|
| 74 |
Electron beam processing for MOS devices with shallow junctions
|
|
|
1986
|
26 |
4 |
p. 798-
1 p.
|
artikel
|
| 75 |
4553435 Elevated transient temperature leak test for unstable microelectronic packages
|
Goldfarb, Harold
|
|
1986
|
26 |
4 |
p. 801-
1 p.
|
artikel
|
| 76 |
Estimation of Weibull shape-parameters for two independent competing risks
|
|
|
1986
|
26 |
4 |
p. 786-
1 p.
|
artikel
|
| 77 |
Evaluation of reliability and M.T.T.F. of a complex system by Boolean Function technique
|
Gupta, P.P.
|
|
1986
|
26 |
4 |
p. 627-631
5 p.
|
artikel
|
| 78 |
Exact reliability formulas for linear and circular consecutive-k-out-of-n:F systems
|
|
|
1986
|
26 |
4 |
p. 789-
1 p.
|
artikel
|
| 79 |
Exotic materials for integrated circuits
|
|
|
1986
|
26 |
4 |
p. 790-
1 p.
|
artikel
|
| 80 |
Extension of the Duane plotting technique
|
|
|
1986
|
26 |
4 |
p. 788-
1 p.
|
artikel
|
| 81 |
Failure analysis of ECL memories by means of voltage contrast measurements and advanced preparation techniques
|
|
|
1986
|
26 |
4 |
p. 784-
1 p.
|
artikel
|
| 82 |
Failure mechanism study of GaAs MODFET devices and integrated circuits
|
|
|
1986
|
26 |
4 |
p. 782-
1 p.
|
artikel
|
| 83 |
Fault diagnosis of analog circuits
|
|
|
1986
|
26 |
4 |
p. 785-786
2 p.
|
artikel
|
| 84 |
FEDSS—A 2D semiconductor fabrication process simulator
|
|
|
1986
|
26 |
4 |
p. 794-
1 p.
|
artikel
|
| 85 |
Formation of droplets on Si surfaces bombarded by In from a capillary type liquid metal ion source
|
|
|
1986
|
26 |
4 |
p. 798-
1 p.
|
artikel
|
| 86 |
FTANS—a computer program for probabilistic analysis of non-coherent structures
|
|
|
1986
|
26 |
4 |
p. 790-
1 p.
|
artikel
|
| 87 |
Gate-array design. A hierarchical development trend
|
|
|
1986
|
26 |
4 |
p. 791-
1 p.
|
artikel
|
| 88 |
Generating continuous random variates from a hazard rate function
|
|
|
1986
|
26 |
4 |
p. 787-
1 p.
|
artikel
|
| 89 |
Guest editorial
|
Verwey, J.F.
|
|
1986
|
26 |
4 |
p. 609-
1 p.
|
artikel
|
| 90 |
Hafnium-n type silicon Schottky barriers
|
|
|
1986
|
26 |
4 |
p. 795-
1 p.
|
artikel
|
| 91 |
Hazard model for repaired system
|
|
|
1986
|
26 |
4 |
p. 789-
1 p.
|
artikel
|
| 92 |
4553192 High density planar interconnected integrated circuit package
|
Babuka, Robert
|
|
1986
|
26 |
4 |
p. 800-
1 p.
|
artikel
|
| 93 |
High performance packaging
|
|
|
1986
|
26 |
4 |
p. 791-
1 p.
|
artikel
|
| 94 |
High voltage screening of GaAs power FETs: effect on burn-in yield and modes of catastrophic device failure
|
|
|
1986
|
26 |
4 |
p. 781-
1 p.
|
artikel
|
| 95 |
HPD prediction intervals for Rayleigh distribution
|
|
|
1986
|
26 |
4 |
p. 788-
1 p.
|
artikel
|
| 96 |
Hybrid circuit manufacturing update
|
|
|
1986
|
26 |
4 |
p. 796-
1 p.
|
artikel
|
| 97 |
Hybrid reliability modeling of fault-tolerant computer systems
|
|
|
1986
|
26 |
4 |
p. 785-
1 p.
|
artikel
|
| 98 |
IC-design automation strides into silicon-compilation era
|
|
|
1986
|
26 |
4 |
p. 792-
1 p.
|
artikel
|
| 99 |
IC production lines move closer to full automation
|
|
|
1986
|
26 |
4 |
p. 792-
1 p.
|
artikel
|
| 100 |
ID slicing technology for large diameters
|
|
|
1986
|
26 |
4 |
p. 794-
1 p.
|
artikel
|
| 101 |
Improvements in reliability of VLSI integrated circuits
|
|
|
1986
|
26 |
4 |
p. 782-
1 p.
|
artikel
|
| 102 |
Integration of reliability and capacity in performance measure of a telecommunication network
|
|
|
1986
|
26 |
4 |
p. 784-
1 p.
|
artikel
|
| 103 |
Introducing dependency into IC yield models
|
|
|
1986
|
26 |
4 |
p. 783-
1 p.
|
artikel
|
| 104 |
Introduction to VLSI systems
|
G.W.A.D.,
|
|
1986
|
26 |
4 |
p. 779-
1 p.
|
artikel
|
| 105 |
Investigation into GaAs power MESFET surface degradation
|
|
|
1986
|
26 |
4 |
p. 783-
1 p.
|
artikel
|
| 106 |
Ion distribution near a mask edge with arbitrary shape for VLSI IC applications
|
|
|
1986
|
26 |
4 |
p. 798-
1 p.
|
artikel
|
| 107 |
Iterative method for steady state reliability analysis of complex Markov systems
|
|
|
1986
|
26 |
4 |
p. 786-
1 p.
|
artikel
|
| 108 |
Kerf test structure designs for process and device characterization
|
|
|
1986
|
26 |
4 |
p. 781-
1 p.
|
artikel
|
| 109 |
Laser-induced chemical vapor deposition
|
|
|
1986
|
26 |
4 |
p. 797-
1 p.
|
artikel
|
| 110 |
Low pressure plasma etching with magnetic confinement
|
|
|
1986
|
26 |
4 |
p. 793-
1 p.
|
artikel
|
| 111 |
Materials and technology of wafering
|
|
|
1986
|
26 |
4 |
p. 793-
1 p.
|
artikel
|
| 112 |
Maximum likelihood estimation for the 2-parameter Weibull distribution based in interval-data
|
|
|
1986
|
26 |
4 |
p. 787-
1 p.
|
artikel
|
| 113 |
Mean time to achieve a failure-free requirement with imperfect repair
|
|
|
1986
|
26 |
4 |
p. 786-
1 p.
|
artikel
|
| 114 |
Measuring and modeling minority carrier transport in heavily doped silicon
|
|
|
1986
|
26 |
4 |
p. 795-796
2 p.
|
artikel
|
| 115 |
4556840 Method for testing electronic assemblies
|
Russell, RobertJ
|
|
1986
|
26 |
4 |
p. 801-802
2 p.
|
artikel
|
| 116 |
4553225 Method of testing IC memories
|
Ohe, Yoshikazu
|
|
1986
|
26 |
4 |
p. 801-
1 p.
|
artikel
|
| 117 |
Microscopic models of Hg+, Auo and Pt− isoelectronic interstitial impurities in silicon
|
|
|
1986
|
26 |
4 |
p. 795-
1 p.
|
artikel
|
| 118 |
4554506 Modular test probe
|
Faure, LouisH
|
|
1986
|
26 |
4 |
p. 801-
1 p.
|
artikel
|
| 119 |
Moisture resistance degradation of plastic LSIs by reflow soldering
|
|
|
1986
|
26 |
4 |
p. 781-782
2 p.
|
artikel
|
| 120 |
Moisture resistance of polyimide multilevel interconnect LSIs
|
|
|
1986
|
26 |
4 |
p. 783-
1 p.
|
artikel
|
| 121 |
Monte Carlo study of two-dimensional electron gas transport in Si-MOS devices
|
|
|
1986
|
26 |
4 |
p. 796-
1 p.
|
artikel
|
| 122 |
M.T.T.F. and availability evaluation of a two-unit, two-state, standby redundant complex system with constant human failure
|
Gupta, P.P.
|
|
1986
|
26 |
4 |
p. 647-650
4 p.
|
artikel
|
| 123 |
4551788 Multi-chip carrier array
|
Daniel, RobertP
|
|
1986
|
26 |
4 |
p. 799-
1 p.
|
artikel
|
| 124 |
New filler-induced failure mechanism in plastic encapsulated VLSI dynamic MOS memories
|
|
|
1986
|
26 |
4 |
p. 781-
1 p.
|
artikel
|
| 125 |
Numerical solution of integral equations for reliability quantification
|
|
|
1986
|
26 |
4 |
p. 786-787
2 p.
|
artikel
|
| 126 |
On-chip testing of embedded p.l.a.s.
|
|
|
1986
|
26 |
4 |
p. 784-
1 p.
|
artikel
|
| 127 |
On reliability evaluation by network decomposition
|
|
|
1986
|
26 |
4 |
p. 784-
1 p.
|
artikel
|
| 128 |
On shallow-deep instability of impurity level in semiconductors
|
|
|
1986
|
26 |
4 |
p. 795-
1 p.
|
artikel
|
| 129 |
On the availability of 1-out-of-2 standby systems
|
|
|
1986
|
26 |
4 |
p. 787-
1 p.
|
artikel
|
| 130 |
On yield-optimizing design rules
|
|
|
1986
|
26 |
4 |
p. 787-
1 p.
|
artikel
|
| 131 |
Operational behaviour of a power plant consisting of three generators by B.F. technique
|
Gupta, P.P.
|
|
1986
|
26 |
4 |
p. 633-640
8 p.
|
artikel
|
| 132 |
Operational life testing of integrated circuits
|
|
|
1986
|
26 |
4 |
p. 782-
1 p.
|
artikel
|
| 133 |
Optimal age-replacement policy for equipment monitored by a stochastically failing indicator
|
|
|
1986
|
26 |
4 |
p. 785-
1 p.
|
artikel
|
| 134 |
Optimal consecutive-k-out-of-n:F component sequencing
|
|
|
1986
|
26 |
4 |
p. 787-
1 p.
|
artikel
|
| 135 |
Optimal consecutive-2-out-of-n:F component sequencing
|
|
|
1986
|
26 |
4 |
p. 785-
1 p.
|
artikel
|
| 136 |
Optimal repair of a 2-component series-system with partially repairable components
|
|
|
1986
|
26 |
4 |
p. 789-790
2 p.
|
artikel
|
| 137 |
Optimal selection methods for failure and repair rates using nomographs
|
|
|
1986
|
26 |
4 |
p. 789-
1 p.
|
artikel
|
| 138 |
Optimal software release policies for a non-homogeneous software error detection rate model
|
Yamada, Shigeru
|
|
1986
|
26 |
4 |
p. 691-702
12 p.
|
artikel
|
| 139 |
4553049 Oscillation prevention during testing of integrated circuit logic chips
|
Cha, Charles
|
|
1986
|
26 |
4 |
p. 800-
1 p.
|
artikel
|
| 140 |
Overlay accuracy for VLSI devices
|
|
|
1986
|
26 |
4 |
p. 792-
1 p.
|
artikel
|
| 141 |
Oxygen behaviour in liquid phase expitaxial GaAs
|
|
|
1986
|
26 |
4 |
p. 795-
1 p.
|
artikel
|
| 142 |
4551745 Package for semiconductor device
|
Watanabe, Hisashi
|
|
1986
|
26 |
4 |
p. 799-
1 p.
|
artikel
|
| 143 |
Packages for ultra-high speed GaAs ICs
|
|
|
1986
|
26 |
4 |
p. 794-
1 p.
|
artikel
|
| 144 |
Packaging changes make automatic testing tougher, more costly
|
|
|
1986
|
26 |
4 |
p. 791-
1 p.
|
artikel
|
| 145 |
Parametric programming applied to reliability optimization problems
|
|
|
1986
|
26 |
4 |
p. 788-
1 p.
|
artikel
|
| 146 |
Part 2b—deposited dielectrics for VLSI
|
|
|
1986
|
26 |
4 |
p. 794-
1 p.
|
artikel
|
| 147 |
Physical problems in microelectronics
|
G.W.A.D.,
|
|
1986
|
26 |
4 |
p. 778-
1 p.
|
artikel
|
| 148 |
Polycide etching for VLSI applications
|
|
|
1986
|
26 |
4 |
p. 790-
1 p.
|
artikel
|
| 149 |
Positive resist development model for linewidth control
|
|
|
1986
|
26 |
4 |
p. 790-
1 p.
|
artikel
|
| 150 |
Power devices are in the chips
|
|
|
1986
|
26 |
4 |
p. 794-
1 p.
|
artikel
|
| 151 |
Predicting the data retention lifetime of a lithium carbon mono-fluoride battery connected to a ZEROPOWER ™
|
|
|
1986
|
26 |
4 |
p. 783-
1 p.
|
artikel
|
| 152 |
Present status of arsenic planar diffusion sources
|
|
|
1986
|
26 |
4 |
p. 795-
1 p.
|
artikel
|
| 153 |
4551908 Process of forming electrodes and interconnections on silicon semiconductor devices
|
Nagasawa, Eij
|
|
1986
|
26 |
4 |
p. 800-
1 p.
|
artikel
|
| 154 |
Production RIE-II
|
|
|
1986
|
26 |
4 |
p. 791-
1 p.
|
artikel
|
| 155 |
4556975 Programmable redundancy circuit
|
Smith, TeresaB
|
|
1986
|
26 |
4 |
p. 802-
1 p.
|
artikel
|
| 156 |
Progress in materials and packaging
|
|
|
1986
|
26 |
4 |
p. 794-
1 p.
|
artikel
|
| 157 |
Proportional hazards models and MIL-HDBK-217
|
Landers, Thomas L.
|
|
1986
|
26 |
4 |
p. 763-771
9 p.
|
artikel
|
| 158 |
Qualification of integrated circuits
|
Wurnik, Franz
|
|
1986
|
26 |
4 |
p. 665-677
13 p.
|
artikel
|
| 159 |
Random variate generation for Monte Carlo experiments
|
|
|
1986
|
26 |
4 |
p. 786-
1 p.
|
artikel
|
| 160 |
Rapid annealing technology for future VLSI
|
|
|
1986
|
26 |
4 |
p. 792-
1 p.
|
artikel
|
| 161 |
Recursive algorithm for reliability evaluation of k-out-of-n: G system
|
|
|
1986
|
26 |
4 |
p. 789-
1 p.
|
artikel
|
| 162 |
Refractory metals silicides
|
|
|
1986
|
26 |
4 |
p. 791-
1 p.
|
artikel
|
| 163 |
Relationship between tearing strength and electrical resistance in welded microjoints
|
|
|
1986
|
26 |
4 |
p. 781-
1 p.
|
artikel
|
| 164 |
Reliability and failure analyses of computing systems
|
|
|
1986
|
26 |
4 |
p. 787-
1 p.
|
artikel
|
| 165 |
Reliability and M.T.T.F. analysis of a power plant consisting of three generators by Boolean Function technique
|
Gupta, P.P.
|
|
1986
|
26 |
4 |
p. 641-645
5 p.
|
artikel
|
| 166 |
Reliability assurance during the production of telecommunications equipment
|
|
|
1986
|
26 |
4 |
p. 784-
1 p.
|
artikel
|
| 167 |
Reliability-equivalent-separation of a node
|
|
|
1986
|
26 |
4 |
p. 788-789
2 p.
|
artikel
|
| 168 |
Reliability evaluation and optimization of redundant dynamic systems
|
|
|
1986
|
26 |
4 |
p. 789-
1 p.
|
artikel
|
| 169 |
Reliability evaluation of electric power systems in alternating environment
|
Dhillon, B.S.
|
|
1986
|
26 |
4 |
p. 679-690
12 p.
|
artikel
|
| 170 |
Resist modeling and profile simulation
|
|
|
1986
|
26 |
4 |
p. 790-
1 p.
|
artikel
|
| 171 |
Review of single wafer reactor technology for device processing
|
|
|
1986
|
26 |
4 |
p. 792-
1 p.
|
artikel
|
| 172 |
RIE of GaAs in chlorinated plasma
|
|
|
1986
|
26 |
4 |
p. 791-
1 p.
|
artikel
|
| 173 |
Robot transfer system for wafer processing
|
|
|
1986
|
26 |
4 |
p. 790-791
2 p.
|
artikel
|
| 174 |
Role of miniaturization in the improvement of reliability
|
Arora, R.K.
|
|
1986
|
26 |
4 |
p. 773-775
3 p.
|
artikel
|
| 175 |
Silicon epitaxial processing techniques for ultra-low defect densities
|
|
|
1986
|
26 |
4 |
p. 782-
1 p.
|
artikel
|
| 176 |
Silicon wafers engineered for ULSI circuits
|
|
|
1986
|
26 |
4 |
p. 794-
1 p.
|
artikel
|
| 177 |
Smart power ICs move from promise to production
|
|
|
1986
|
26 |
4 |
p. 794-
1 p.
|
artikel
|
| 178 |
Software reliability—theory and practice
|
|
|
1986
|
26 |
4 |
p. 787-
1 p.
|
artikel
|
| 179 |
SOI-CMOS 4K SRAM via oxygen implants
|
|
|
1986
|
26 |
4 |
p. 797-
1 p.
|
artikel
|
| 180 |
Some general measures for a complex n-unit standby redundant system
|
Natarajan, R.
|
|
1986
|
26 |
4 |
p. 619-623
5 p.
|
artikel
|
| 181 |
Some graphical techniques for estimating Weibull confidence intervals
|
|
|
1986
|
26 |
4 |
p. 787-
1 p.
|
artikel
|
| 182 |
Stress induced voids in aluminum interconnects during IC processing
|
|
|
1986
|
26 |
4 |
p. 782-
1 p.
|
artikel
|
| 183 |
Strict consecutive-k-out-of-n:F systems
|
|
|
1986
|
26 |
4 |
p. 786-
1 p.
|
artikel
|
| 184 |
Techniques of wafer lapping and polishing
|
|
|
1986
|
26 |
4 |
p. 794-
1 p.
|
artikel
|
| 185 |
Testing equality of binomial parameters based on inverse sampling
|
|
|
1986
|
26 |
4 |
p. 786-
1 p.
|
artikel
|
| 186 |
Testing particle generation by a wafer handling robot
|
|
|
1986
|
26 |
4 |
p. 791-
1 p.
|
artikel
|
| 187 |
The annealing of 1 MeV implantations of boron in silicon
|
|
|
1986
|
26 |
4 |
p. 797-
1 p.
|
artikel
|
| 188 |
The application of statistical regression to yield modeling
|
|
|
1986
|
26 |
4 |
p. 789-
1 p.
|
artikel
|
| 189 |
The CAE workstation in semicustom design
|
|
|
1986
|
26 |
4 |
p. 791-
1 p.
|
artikel
|
| 190 |
The dependency model: a tool for calculating system effectiveness
|
|
|
1986
|
26 |
4 |
p. 788-
1 p.
|
artikel
|
| 191 |
The design and analysis of VLSI circuits
|
G.W.A.D.,
|
|
1986
|
26 |
4 |
p. 777-
1 p.
|
artikel
|
| 192 |
The DIP may take its final bows
|
|
|
1986
|
26 |
4 |
p. 790-
1 p.
|
artikel
|
| 193 |
The far infrared absorption spectra of bound excitons in silicon
|
|
|
1986
|
26 |
4 |
p. 795-
1 p.
|
artikel
|
| 194 |
The gases of plasma etching: silicon-based technology
|
|
|
1986
|
26 |
4 |
p. 792-
1 p.
|
artikel
|
| 195 |
The identification and elimination of human contamination in the manufacture of ICs
|
|
|
1986
|
26 |
4 |
p. 782-
1 p.
|
artikel
|
| 196 |
The influence of stress on aluminum conductor life
|
|
|
1986
|
26 |
4 |
p. 783-
1 p.
|
artikel
|
| 197 |
The linear software reliability model and uniform testing
|
|
|
1986
|
26 |
4 |
p. 784-785
2 p.
|
artikel
|
| 198 |
The submicron lithography labyrinth
|
|
|
1986
|
26 |
4 |
p. 791-792
2 p.
|
artikel
|
| 199 |
Thin film technology for advanced semiconductors—Part I. Silicon epitaxy: a critical technology
|
|
|
1986
|
26 |
4 |
p. 796-
1 p.
|
artikel
|
| 200 |
Tighter VLSI geometries create problems with hot carriers
|
|
|
1986
|
26 |
4 |
p. 790-
1 p.
|
artikel
|
| 201 |
Transconductance degradation in VLSI devices
|
|
|
1986
|
26 |
4 |
p. 783-
1 p.
|
artikel
|
| 202 |
Two-dimensional device simulation program: 2DP
|
|
|
1986
|
26 |
4 |
p. 792-
1 p.
|
artikel
|
| 203 |
Undersea transmission-system reliability with laser-diode standby-redundant optical repeaters
|
|
|
1986
|
26 |
4 |
p. 785-
1 p.
|
artikel
|
| 204 |
Units of equipment available using cannibalization for repair-part support
|
|
|
1986
|
26 |
4 |
p. 784-
1 p.
|
artikel
|
| 205 |
Upper management and quality—some experiences
|
|
|
1986
|
26 |
4 |
p. 786-
1 p.
|
artikel
|
| 206 |
Using Petri nets for performance analysis of two-terminal parallel-series communication networks
|
Hura, Gurdeep S.
|
|
1986
|
26 |
4 |
p. 703-714
12 p.
|
artikel
|
| 207 |
Using the decomposition tree for directed-network reliability computation
|
|
|
1986
|
26 |
4 |
p. 785-
1 p.
|
artikel
|
| 208 |
VLSI-chip test system tests itself at board level
|
|
|
1986
|
26 |
4 |
p. 794-
1 p.
|
artikel
|
| 209 |
VLSI wiring capacitance
|
|
|
1986
|
26 |
4 |
p. 794-
1 p.
|
artikel
|
| 210 |
Wafer charging and beam interactions in ion implantation
|
|
|
1986
|
26 |
4 |
p. 797-
1 p.
|
artikel
|
| 211 |
Wafer dicing: on the threshold of automation
|
|
|
1986
|
26 |
4 |
p. 792-
1 p.
|
artikel
|
| 212 |
Wafer inspection for defects
|
|
|
1986
|
26 |
4 |
p. 794-
1 p.
|
artikel
|
| 213 |
Warranty policies for non-repairable items under risk aversion
|
|
|
1986
|
26 |
4 |
p. 781-
1 p.
|
artikel
|
| 214 |
XPS analysis of GaAs-surface quality affecting interelectrode material migration
|
|
|
1986
|
26 |
4 |
p. 790-
1 p.
|
artikel
|
| 215 |
X-ray lithography with negative resists
|
|
|
1986
|
26 |
4 |
p. 790-
1 p.
|
artikel
|
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