nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
Accelerated ageing of IMPATT diodes
|
Sinnadurai, F.N |
|
1981 |
21 |
2 |
p. 209-219 11 p. |
artikel |
2 |
A complex two-unit parallel system
|
Subramanian, R |
|
1981 |
21 |
2 |
p. 273-275 3 p. |
artikel |
3 |
A computer algorithm for the analysis of maintained standby redundant systems
|
Kumar, Ashok |
|
1981 |
21 |
2 |
p. 175-182 8 p. |
artikel |
4 |
Adhesion of thin film circuits
|
|
|
1981 |
21 |
2 |
p. 287- 1 p. |
artikel |
5 |
Adsorption effects on ESR and conductance of rf sputtered a-Si films
|
|
|
1981 |
21 |
2 |
p. 288- 1 p. |
artikel |
6 |
An algebraic technique for reliability evaluation
|
|
|
1981 |
21 |
2 |
p. 278- 1 p. |
artikel |
7 |
An alternative fault-tree algebra
|
|
|
1981 |
21 |
2 |
p. 280- 1 p. |
artikel |
8 |
Analysis of a repairable redundant system with delayed replacement
|
Agarwal, Manju |
|
1981 |
21 |
2 |
p. 165-171 7 p. |
artikel |
9 |
An approach to high speed laser trimming of thick film resistors
|
|
|
1981 |
21 |
2 |
p. 290- 1 p. |
artikel |
10 |
A new approach to the topological design of hybrid circuits
|
|
|
1981 |
21 |
2 |
p. 289- 1 p. |
artikel |
11 |
A new bad data detection and identification algorithm
|
|
|
1981 |
21 |
2 |
p. 279- 1 p. |
artikel |
12 |
A new band-reject filter configuration of three-layer thin-film exponential R-C-KR micro-system
|
Ahmed, Kamal U |
|
1981 |
21 |
2 |
p. 241-242 2 p. |
artikel |
13 |
A new process for printing fine conductor lines and spaces on large area substrates
|
|
|
1981 |
21 |
2 |
p. 282- 1 p. |
artikel |
14 |
A new production technique: ion milling
|
|
|
1981 |
21 |
2 |
p. 289- 1 p. |
artikel |
15 |
An installed tape automated bonding unit
|
|
|
1981 |
21 |
2 |
p. 282- 1 p. |
artikel |
16 |
An integrated FM receiver
|
Kasperkovitz, D |
|
1981 |
21 |
2 |
p. 183-189 7 p. |
artikel |
17 |
An introduction to the Navy Manufacturing Technology Program for Computerized Thick-Film Printing
|
|
|
1981 |
21 |
2 |
p. 288- 1 p. |
artikel |
18 |
Annealing of SiSiO2 interface states using Ar-ion-implant-damage-gettering
|
|
|
1981 |
21 |
2 |
p. 290- 1 p. |
artikel |
19 |
Application of conductive adhesives in microcircuits for “long-life” equipment
|
|
|
1981 |
21 |
2 |
p. 280- 1 p. |
artikel |
20 |
Application of microelectronics in optical precision instrument manufacture
|
|
|
1981 |
21 |
2 |
p. 283- 1 p. |
artikel |
21 |
A programmable pseudo-random noise generator
|
|
|
1981 |
21 |
2 |
p. 283- 1 p. |
artikel |
22 |
A rating criterion for film resistors
|
|
|
1981 |
21 |
2 |
p. 286- 1 p. |
artikel |
23 |
A reparable multistate device with arbitrarily distributed repair times
|
Chung, Who Kee |
|
1981 |
21 |
2 |
p. 255-256 2 p. |
artikel |
24 |
A review of standby redundant systems
|
|
|
1981 |
21 |
2 |
p. 279-280 2 p. |
artikel |
25 |
A solution of the core-exciton issue for silicon and germanium
|
|
|
1981 |
21 |
2 |
p. 285- 1 p. |
artikel |
26 |
A thick-film hybrid laser target board
|
|
|
1981 |
21 |
2 |
p. 286- 1 p. |
artikel |
27 |
Automatic control of large-scale integrated circuit fabrication processes—process control algorithms
|
|
|
1981 |
21 |
2 |
p. 282-283 2 p. |
artikel |
28 |
Availability analysis of a fault-tolerant computer system
|
|
|
1981 |
21 |
2 |
p. 279- 1 p. |
artikel |
29 |
4096 bit and larger bipolar static random access memories
|
|
|
1981 |
21 |
2 |
p. 283- 1 p. |
artikel |
30 |
Bonding-failure analysis with electron beam and nuclear scattering techniques
|
|
|
1981 |
21 |
2 |
p. 290- 1 p. |
artikel |
31 |
Bonding wire microelectronic interconnections
|
|
|
1981 |
21 |
2 |
p. 281- 1 p. |
artikel |
32 |
Calendar of international conferences, symposia, lectures and meetings of interest
|
|
|
1981 |
21 |
2 |
p. 145-146 2 p. |
artikel |
33 |
Chip controls floppy-disk drives
|
|
|
1981 |
21 |
2 |
p. 284- 1 p. |
artikel |
34 |
Chip detects errors in 25 ns
|
|
|
1981 |
21 |
2 |
p. 283- 1 p. |
artikel |
35 |
C-MOS microprocessor wakes itself up
|
|
|
1981 |
21 |
2 |
p. 283- 1 p. |
artikel |
36 |
C-MOS read-only memory mates with a host of processors
|
|
|
1981 |
21 |
2 |
p. 283- 1 p. |
artikel |
37 |
Cmos reliability: A useful case history to revise extrapolation effectiveness, length and slope of the learning curve
|
Brambilla, P |
|
1981 |
21 |
2 |
p. 191-201 11 p. |
artikel |
38 |
Comparison of enameled steel substrate properties for thick film use
|
|
|
1981 |
21 |
2 |
p. 285- 1 p. |
artikel |
39 |
Comparison of Monte Carlo techniques for obtaining system-reliability confidence limits
|
|
|
1981 |
21 |
2 |
p. 279- 1 p. |
artikel |
40 |
Comparison of Thai's theory with experimental boron doping profiles in silicon, diffused from boron nitride sources
|
|
|
1981 |
21 |
2 |
p. 284- 1 p. |
artikel |
41 |
Component verification system
|
|
|
1981 |
21 |
2 |
p. 278- 1 p. |
artikel |
42 |
Computer aided design of adjustable thin film resistors
|
|
|
1981 |
21 |
2 |
p. 286- 1 p. |
artikel |
43 |
Computer controlled imaging system for automatic hybrid inspection
|
|
|
1981 |
21 |
2 |
p. 286- 1 p. |
artikel |
44 |
Concepts for calculating frequency of system failure
|
|
|
1981 |
21 |
2 |
p. 278- 1 p. |
artikel |
45 |
Copper thick film materials: a perspective
|
|
|
1981 |
21 |
2 |
p. 286- 1 p. |
artikel |
46 |
Critical temperatures for the observation of valley-splitting in Si-MOSFETS
|
|
|
1981 |
21 |
2 |
p. 285- 1 p. |
artikel |
47 |
Current noise of resin type and cermet type thick film resistors
|
|
|
1981 |
21 |
2 |
p. 287- 1 p. |
artikel |
48 |
D.C. sputtering process: its characterization and its problems when applied to tin-dioxide thin-films
|
|
|
1981 |
21 |
2 |
p. 289- 1 p. |
artikel |
49 |
Design and development of a 68-lead nonhermetic leaded chip carrier
|
|
|
1981 |
21 |
2 |
p. 287- 1 p. |
artikel |
50 |
Design and production of hybrid circuit artwork
|
|
|
1981 |
21 |
2 |
p. 289- 1 p. |
artikel |
51 |
Design limitations in large bipolar PROMs
|
|
|
1981 |
21 |
2 |
p. 281- 1 p. |
artikel |
52 |
Different chip interconnecting techniques
|
|
|
1981 |
21 |
2 |
p. 282- 1 p. |
artikel |
53 |
Diffusion of boron into silicon from doped oxide source
|
|
|
1981 |
21 |
2 |
p. 284- 1 p. |
artikel |
54 |
Economical failure analysis for microprocessors
|
|
|
1981 |
21 |
2 |
p. 280- 1 p. |
artikel |
55 |
Effect of the Model Uniform Product Liability Act in Quality Assurance
|
Jacobs, Richard M |
|
1981 |
21 |
2 |
p. 263-268 6 p. |
artikel |
56 |
Electrical testing for process evaluations
|
Wada, Yasuo |
|
1981 |
21 |
2 |
p. 159-163 5 p. |
artikel |
57 |
Electrical transport in thick film resistors
|
|
|
1981 |
21 |
2 |
p. 288- 1 p. |
artikel |
58 |
Electric measurement of impurity concentration in p-type epitaxially grown and ion-implanted base regions
|
|
|
1981 |
21 |
2 |
p. 291- 1 p. |
artikel |
59 |
Electron-beam resists for lift-off processing with potential application to Josephson integrated circuits
|
|
|
1981 |
21 |
2 |
p. 291- 1 p. |
artikel |
60 |
Errors in life prediction due to temperature inaccuracies
|
Stanley, I.W |
|
1981 |
21 |
2 |
p. 173-174 2 p. |
artikel |
61 |
Fabrication of thick film circuits on cofired ceramic substrates
|
|
|
1981 |
21 |
2 |
p. 286- 1 p. |
artikel |
62 |
Final-state effects in the excitation spectra of deep impurities in semiconductors
|
|
|
1981 |
21 |
2 |
p. 284- 1 p. |
artikel |
63 |
Foil circuits
|
|
|
1981 |
21 |
2 |
p. 281- 1 p. |
artikel |
64 |
Functional trimming of thick-film active filters for consumer and industrial applications
|
|
|
1981 |
21 |
2 |
p. 285- 1 p. |
artikel |
65 |
GaAs FET failure mechanisms due to high humidity and ionic contamination
|
|
|
1981 |
21 |
2 |
p. 277- 1 p. |
artikel |
66 |
GaAs LSI chips aim at supplanting fastest silicon ICs
|
|
|
1981 |
21 |
2 |
p. 283- 1 p. |
artikel |
67 |
Gate arrays—a special report
|
|
|
1981 |
21 |
2 |
p. 284- 1 p. |
artikel |
68 |
Generalized theory of electrical conductivity and current noise for discontinuous metal films over a wide range of temperatures
|
|
|
1981 |
21 |
2 |
p. 288-289 2 p. |
artikel |
69 |
Hardware approach for generating spanning trees in reliability studies
|
Bansal, V.K |
|
1981 |
21 |
2 |
p. 243-253 11 p. |
artikel |
70 |
Hazard modification techniques for repair and multiple operating conditions
|
|
|
1981 |
21 |
2 |
p. 279- 1 p. |
artikel |
71 |
Heat transfer correlations for use in naturally cooled enclosures with high-power integrated circuits
|
|
|
1981 |
21 |
2 |
p. 282- 1 p. |
artikel |
72 |
Heat transfer of modified silicon surfaces
|
|
|
1981 |
21 |
2 |
p. 284- 1 p. |
artikel |
73 |
Human error considerations in determining the optimum test interval for periodically inspected standby systems
|
|
|
1981 |
21 |
2 |
p. 279- 1 p. |
artikel |
74 |
Hybrid integrated circuit manufacturing process as controlled by shop information systems
|
|
|
1981 |
21 |
2 |
p. 287-288 2 p. |
artikel |
75 |
Hybrids with TAB—at the threshold of production
|
|
|
1981 |
21 |
2 |
p. 286- 1 p. |
artikel |
76 |
IC alignment and layout considerations
|
|
|
1981 |
21 |
2 |
p. 282- 1 p. |
artikel |
77 |
Influence of evaporation-deposition geometry on conductive thin films
|
|
|
1981 |
21 |
2 |
p. 288- 1 p. |
artikel |
78 |
Integrated bandsplit filter system for a dual-tone-multifrequency receiver
|
|
|
1981 |
21 |
2 |
p. 283- 1 p. |
artikel |
79 |
Ion implantation of sulfur and silicon in GaAs
|
|
|
1981 |
21 |
2 |
p. 290- 1 p. |
artikel |
80 |
ISSCC opens era of ultra LSI
|
|
|
1981 |
21 |
2 |
p. 280- 1 p. |
artikel |
81 |
64-K static RAM surrounds n-MOS cells with C-MOS circuits
|
|
|
1981 |
21 |
2 |
p. 283- 1 p. |
artikel |
82 |
Laser projection printing
|
|
|
1981 |
21 |
2 |
p. 289- 1 p. |
artikel |
83 |
Limits to the size of semiconductor devices
|
|
|
1981 |
21 |
2 |
p. 280- 1 p. |
artikel |
84 |
Local and quasi-local vibrational modes of Si in Ge
|
|
|
1981 |
21 |
2 |
p. 285- 1 p. |
artikel |
85 |
Low-field time-dependent dielectric integrity
|
|
|
1981 |
21 |
2 |
p. 278- 1 p. |
artikel |
86 |
Macro generation algorithms for LSI custom chip design
|
|
|
1981 |
21 |
2 |
p. 282- 1 p. |
artikel |
87 |
Microelectronics takes to the road in a big way: a special report
|
|
|
1981 |
21 |
2 |
p. 280- 1 p. |
artikel |
88 |
Microprocessor and LSI microcircuit reliability-prediction model
|
|
|
1981 |
21 |
2 |
p. 280- 1 p. |
artikel |
89 |
Modeling the repairability function by the first passage time distribution of Brownian motion
|
Sherif, Yosef S |
|
1981 |
21 |
2 |
p. 257-258 2 p. |
artikel |
90 |
Network reliability evaluation of three-state devices using transformation technique
|
Gadani, J.P |
|
1981 |
21 |
2 |
p. 231-234 4 p. |
artikel |
91 |
New applications open up for silicon sensors: a special report
|
|
|
1981 |
21 |
2 |
p. 280- 1 p. |
artikel |
92 |
Noise in phosphorus-implanted buried channel MOS transistors
|
|
|
1981 |
21 |
2 |
p. 290- 1 p. |
artikel |
93 |
Noise measurement analysis of NPN transistors after gamma irradiation—An investigation for reliability
|
Khobare, S.K |
|
1981 |
21 |
2 |
p. 221-224 4 p. |
artikel |
94 |
Numerical analysis of the resistance of interference-fit pin connections
|
|
|
1981 |
21 |
2 |
p. 282- 1 p. |
artikel |
95 |
On trends in automatic testing of analog circuits
|
Soi, Inder M |
|
1981 |
21 |
2 |
p. 151-157 7 p. |
artikel |
96 |
Operational availability of a multi-component sequential system with imperfect switching and opportunistic repair under preemptive resume repair policy
|
|
|
1981 |
21 |
2 |
p. 279- 1 p. |
artikel |
97 |
Optical lithography in the 1-μm limit
|
|
|
1981 |
21 |
2 |
p. 283- 1 p. |
artikel |
98 |
Optimization of thick film resistors for low drift
|
|
|
1981 |
21 |
2 |
p. 289- 1 p. |
artikel |
99 |
Pattern partitioning for enhanced proximity-effect corrections in electron-beam lithography
|
|
|
1981 |
21 |
2 |
p. 289- 1 p. |
artikel |
100 |
Planar plasma etching of polycrystalline silicon
|
|
|
1981 |
21 |
2 |
p. 281- 1 p. |
artikel |
101 |
Plasma sprayed resistors
|
|
|
1981 |
21 |
2 |
p. 285-286 2 p. |
artikel |
102 |
Precision thick film active RC filters
|
|
|
1981 |
21 |
2 |
p. 289- 1 p. |
artikel |
103 |
Preparation and properties of thick film resistors containing cadmium glasses and cadmium oxide
|
|
|
1981 |
21 |
2 |
p. 288- 1 p. |
artikel |
104 |
Procedure for weighting failure rates in Markov reliability models for automation systems
|
|
|
1981 |
21 |
2 |
p. 280- 1 p. |
artikel |
105 |
Properties of nickel films prepared by r.f. sputtering and interdiffusion analysis of Ta2NNi films
|
|
|
1981 |
21 |
2 |
p. 285- 1 p. |
artikel |
106 |
Protection system reliability modeling: unreadiness probability and mean duration of undetected faults
|
|
|
1981 |
21 |
2 |
p. 279- 1 p. |
artikel |
107 |
Proximity correction enhancements for 1-μm dense circuits
|
|
|
1981 |
21 |
2 |
p. 289-290 2 p. |
artikel |
108 |
Publications, notices, calls for papers, etc.
|
|
|
1981 |
21 |
2 |
p. 147-149 3 p. |
artikel |
109 |
QA aspects of silicon-on-sapphire and gallium arsenide integrated circuit devices
|
|
|
1981 |
21 |
2 |
p. 277- 1 p. |
artikel |
110 |
Quality and reliability in hybrid circuits
|
|
|
1981 |
21 |
2 |
p. 289- 1 p. |
artikel |
111 |
Quality and reliability of avionic equipment
|
|
|
1981 |
21 |
2 |
p. 278- 1 p. |
artikel |
112 |
Quantum well model of hydrogenated amorphous silicon
|
|
|
1981 |
21 |
2 |
p. 284- 1 p. |
artikel |
113 |
Quasistatic and nonequilibrium phenomena in m.o.s. structures under the influence of a constant gate-current bias
|
|
|
1981 |
21 |
2 |
p. 283-284 2 p. |
artikel |
114 |
Reactive ion etching in chlorinated plasmas
|
|
|
1981 |
21 |
2 |
p. 290- 1 p. |
artikel |
115 |
Reactive sputter etching and its applications
|
|
|
1981 |
21 |
2 |
p. 282- 1 p. |
artikel |
116 |
Registration mark detection for electron-beam lithography—EL1 system
|
|
|
1981 |
21 |
2 |
p. 290-291 2 p. |
artikel |
117 |
Reliability evaluation and prediction for discrete semiconductors
|
|
|
1981 |
21 |
2 |
p. 277-278 2 p. |
artikel |
118 |
Reliability modeling of TMR computer systems with repair and common mode failures
|
Singh, C |
|
1981 |
21 |
2 |
p. 259-262 4 p. |
artikel |
119 |
Reliability of all possible series-parallel redundant structures of M.I.I.D. units with two failure modes
|
|
|
1981 |
21 |
2 |
p. 278- 1 p. |
artikel |
120 |
Reliability of a stand-by system with common-cause failures and scheduled maintenance
|
Govil, A.K |
|
1981 |
21 |
2 |
p. 269-271 3 p. |
artikel |
121 |
Resistivity changes of heavily-boron-doped CVD-prepared polycrystalline silicon caused by thermal annealing
|
|
|
1981 |
21 |
2 |
p. 284- 1 p. |
artikel |
122 |
Resolution of the gold wire grain growth failure mechanism in plastic encapsulated microelectronic devices
|
|
|
1981 |
21 |
2 |
p. 281- 1 p. |
artikel |
123 |
Roundup: 16-K byte-wide RAMs abound
|
|
|
1981 |
21 |
2 |
p. 283- 1 p. |
artikel |
124 |
Semiconductor instability failure mechanisms review
|
|
|
1981 |
21 |
2 |
p. 277- 1 p. |
artikel |
125 |
Sequence test method for reliability evaluation of semiconductor devices
|
Candade, Vittal S |
|
1981 |
21 |
2 |
p. 225-229 5 p. |
artikel |
126 |
Silicone resin and elastomer protection of hybrid circuits
|
|
|
1981 |
21 |
2 |
p. 289- 1 p. |
artikel |
127 |
Software reliability of programs with network structure
|
Suri, P.K |
|
1981 |
21 |
2 |
p. 203-207 5 p. |
artikel |
128 |
State of the art in thin film transistor: a review of the used insulator-semiconductor combinations
|
|
|
1981 |
21 |
2 |
p. 286- 1 p. |
artikel |
129 |
Status of copper thick film hybrids
|
|
|
1981 |
21 |
2 |
p. 286-287 2 p. |
artikel |
130 |
Stencil screens for fine-line printing
|
|
|
1981 |
21 |
2 |
p. 287- 1 p. |
artikel |
131 |
Strain sensitivity in thick-film resistors
|
|
|
1981 |
21 |
2 |
p. 288- 1 p. |
artikel |
132 |
Stress distributions around an interference-fit pin connection in a plated through hole
|
|
|
1981 |
21 |
2 |
p. 282- 1 p. |
artikel |
133 |
Substrate influence on the structure of thin films
|
|
|
1981 |
21 |
2 |
p. 285- 1 p. |
artikel |
134 |
Synthesis and number of all series-parallel structures with n components
|
|
|
1981 |
21 |
2 |
p. 278- 1 p. |
artikel |
135 |
System effectiveness models: an annotated bibliography
|
|
|
1981 |
21 |
2 |
p. 279- 1 p. |
artikel |
136 |
Tape automated bonding meets VLSI challenge
|
|
|
1981 |
21 |
2 |
p. 281- 1 p. |
artikel |
137 |
Techniques for ultra-fine pattern generation
|
|
|
1981 |
21 |
2 |
p. 281- 1 p. |
artikel |
138 |
The influence of VLSI circuitry on the progress of microlithographic equipment
|
|
|
1981 |
21 |
2 |
p. 283- 1 p. |
artikel |
139 |
The longitudinal diffusion coefficient and the mobility of hot electrons in silicon
|
|
|
1981 |
21 |
2 |
p. 284- 1 p. |
artikel |
140 |
The measurement of deep centers in float zone silicon by photovoltage spectroscopy
|
|
|
1981 |
21 |
2 |
p. 284-285 2 p. |
artikel |
141 |
Theoretical considerations regarding pulsed CO2 laser annealing of silicon
|
|
|
1981 |
21 |
2 |
p. 289- 1 p. |
artikel |
142 |
The rf diode co-deposition of refractory metal silicides
|
|
|
1981 |
21 |
2 |
p. 285- 1 p. |
artikel |
143 |
Thermal management techniques keep semiconductors cool
|
|
|
1981 |
21 |
2 |
p. 281- 1 p. |
artikel |
144 |
The solution of two-dimensional heat conduction problems for predicting operating temperature and power handling capabilities of hybrid circuits
|
|
|
1981 |
21 |
2 |
p. 287- 1 p. |
artikel |
145 |
Thick-film circuits for high-reliability applications
|
|
|
1981 |
21 |
2 |
p. 288- 1 p. |
artikel |
146 |
Thick film thermal print heads
|
|
|
1981 |
21 |
2 |
p. 285- 1 p. |
artikel |
147 |
Thin film with surface disorder in the average t-matrix approximation
|
|
|
1981 |
21 |
2 |
p. 287- 1 p. |
artikel |
148 |
Tough control tasks take 16 bits
|
|
|
1981 |
21 |
2 |
p. 283- 1 p. |
artikel |
149 |
Training quality control technicians
|
|
|
1981 |
21 |
2 |
p. 277- 1 p. |
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150 |
Two-port subnetworks of exponential distributed parameter Z-Y-KZ and Y-Z-KY micro-circuits with similar transfer functions
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1981 |
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1981 |
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1981 |
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1981 |
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