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                             163 results found
no title author magazine year volume issue page(s) type
1 A case study of C.mmp, Cm∗, and C.vmp: Part II—Predicting and calibrating reliability of multiprocessor systems 1979
 19 4 p. 307-308
2 p.
 article
2 Accurate two-port model of the metal-oxide semiconductor transistor 1979
 19 4 p. 305-
1 p.
 article
3 Advances in ion beam milling 1979
 19 4 p. 318-
1 p.
 article
4 A high resolution study of the excitation spectrum of phosphorus donors introduced in silicon by neutron transmutation 1979
 19 4 p. 316-
1 p.
 article
5 Aluminium alloy as an interconnecting material in the fabrication of integrated circuits Gupta, Tapan Kumar
 1979
 19 4 p. 337-343
7 p.
 article
6 A matrix approach to calculate the failure frequency and related indices Singh, C.
 1979
 19 4 p. 395-398
4 p.
 article
7 An algorithm for enumerating all simple paths in a communication network Misra, R.B.
 1979
 19 4 p. 363-366
4 p.
 article
8 An algorithm for minimum length fault tests for combinational circuits 1979
 19 4 p. 306-
1 p.
 article
9 Analysis of a two-unit maintained series system with imperfect detection of failures Kumar, Ashok
 1979
 19 4 p. 329-331
3 p.
 article
10 Analysis of a 2-unit standby redundant system with two types of failures 1979
 19 4 p. 306-
1 p.
 article
11 A new approach to optimal redundancy allocation for complex networks Gopal, Krishna
 1979
 19 4 p. 387-390
4 p.
 article
12 A new approach to reliability optimization in general modular redundant systems 1979
 19 4 p. 306-
1 p.
 article
13 A new electroless method for low-loss microwave integrated circuits 1979
 19 4 p. 309-
1 p.
 article
14 Anodic oxides on GaAs II. Anodic Al2O3 and composite oxides on GaAs 1979
 19 4 p. 311-
1 p.
 article
15 An uhv system for in situ preparation and analysis of thin films and surfaces 1979
 19 4 p. 317-
1 p.
 article
16 A n-unit redundant system with common-cause failures Chung, Who Kee
 1979
 19 4 p. 377-378
2 p.
 article
17 Approximate calculation of block replacement with Weibull failure times 1979
 19 4 p. 306-
1 p.
 article
18 A rapid algorithm for reliability optimization of parallel redundant systems 1979
 19 4 p. 307-
1 p.
 article
19 Architectures for fault-tolerant spacecraft computers 1979
 19 4 p. 308-
1 p.
 article
20 A Review of electronics reliability engineering practice 1979
 19 4 p. 303-
1 p.
 article
21 A small scale silicon epitaxial film deposition system 1979
 19 4 p. 312-313
2 p.
 article
22 Availability of a special 2-unit series system 1979
 19 4 p. 307-
1 p.
 article
23 Breakdown in ceramic capacitors under pulsed high-voltage stress 1979
 19 4 p. 305-
1 p.
 article
24 Calendar of international conferences, symposia, lectures and meetings of interest 1979
 19 4 p. 287-289
3 p.
 article
25 Carrier density dependence of Auger recombination 1979
 19 4 p. 312-
1 p.
 article
26 Characterization and morphology of chemical vapour deposition of silicon 1979
 19 4 p. 315-
1 p.
 article
27 Chemical vapour deposition of indium phosphide 1979
 19 4 p. 315-
1 p.
 article
28 C-MOS on sapphire sparks small computer's performance 1979
 19 4 p. 309-
1 p.
 article
29 C-MOS op amp offsets errors with continuous sampling technique 1979
 19 4 p. 309-
1 p.
 article
30 Common-cause failure analysis of a three-state device system Dhillon, Balbir S.
 1979
 19 4 p. 345-348
4 p.
 article
31 Comparison of the McClure and Mcllraith type ion sources 1979
 19 4 p. 318-
1 p.
 article
32 Computerized approach for matrix-form FMEA 1979
 19 4 p. 308-
1 p.
 article
33 Contributions to the design of highly integrated MOS circuits 1979
 19 4 p. 309-
1 p.
 article
34 Crystal growth mechanisms of semiconductors by chemical vapour deposition 1979
 19 4 p. 315-
1 p.
 article
35 Design forethought promotes easier testing of microcomputer boards 1979
 19 4 p. 309-
1 p.
 article
36 Designing a serviceman's needs into microprocessor-based systems 1979
 19 4 p. 309-
1 p.
 article
37 Designing fail-safe microprocessor systems 1979
 19 4 p. 306-
1 p.
 article
38 Designing reliable computer systems—the fault-tolerant approach—1 1979
 19 4 p. 308-
1 p.
 article
39 Designing reliable computer systems—the fault-tolerant approach—2 1979
 19 4 p. 308-309
2 p.
 article
40 Detection and diagnosis of software malfunctions 1979
 19 4 p. 306-
1 p.
 article
41 Determination of surface state distribution from pulsed MOS capacitor transients 1979
 19 4 p. 314-
1 p.
 article
42 Determination of the exciton energy from electron beam excited luminescence in direct gap semiconductors 1979
 19 4 p. 314-
1 p.
 article
43 Devices meeting focuses on VLSI, GaAs, and sensors 1979
 19 4 p. 309-
1 p.
 article
44 Direct gap recombination in germanium at high excitation level and low temperature 1979
 19 4 p. 313-
1 p.
 article
45 Discharge of m.n.o.s. structures 1979
 19 4 p. 314-
1 p.
 article
46 Doping and annealing effects on ESR in chemically vapor deposited amorphous silicon 1979
 19 4 p. 314-
1 p.
 article
47 Effective exciton-exciton interaction in polar semiconductors 1979
 19 4 p. 315-
1 p.
 article
48 Electrical overstress failure modeling for bipolar semiconductor components 1979
 19 4 p. 304-
1 p.
 article
49 Electronic states on the relaxed (110) surface of GaAs 1979
 19 4 p. 316-
1 p.
 article
50 Eliminating a numerical accuracy problem in mean life calculations 1979
 19 4 p. 306-
1 p.
 article
51 Ellipsometry—a versatile and non-destructive testing technique 1979
 19 4 p. 310-
1 p.
 article
52 Epitaxial growth of III-V semiconductors using organometallies and hybrides 1979
 19 4 p. 316-
1 p.
 article
53 Epitaxial silicon, state of the art 1979
 19 4 p. 314-
1 p.
 article
54 Equilibrium and non-equilibrium response of an m.o.s. system containing interface traps to a linear voltage ramp. 1979
 19 4 p. 310-
1 p.
 article
55 Error prediction in software 1979
 19 4 p. 305-
1 p.
 article
56 Evaluation of adhesives for hybrid microcircuit package sealing 1979
 19 4 p. 317-318
2 p.
 article
57 Evaluation of a U.K. specification for the procurement of plastic encapsulated semiconductor devices for military use 1979
 19 4 p. 304-
1 p.
 article
58 Experimental analysis of a vapour-solid interface 1979
 19 4 p. 315-
1 p.
 article
59 Experimental comparison of localized and free carrier Auger recombination in silicon 1979
 19 4 p. 312-
1 p.
 article
60 Extreme temperature range microelectronics 1979
 19 4 p. 310-
1 p.
 article
61 Failure mechanisms and analysis procedures for semiconductor devices 1979
 19 4 p. 304-
1 p.
 article
62 FATRAM—A core efficient cut-set algorithm 1979
 19 4 p. 307-
1 p.
 article
63 Fault detection in combinational circuits using Boolean matrices 1979
 19 4 p. 306-
1 p.
 article
64 Fault-tolerance: The survival attribute of digital systems 1979
 19 4 p. 308-
1 p.
 article
65 Fault-tolerant computer system with three symmetric computers 1979
 19 4 p. 307-
1 p.
 article
66 Five-year life test data on pressure (10,000 lbf/in2) tolerant electronic components 1979
 19 4 p. 304-
1 p.
 article
67 Flicker noise in MOSFETs made by the DMOS process. 1979
 19 4 p. 315-
1 p.
 article
68 Frequency dependent propagation delay in silicon-on-sapphire digital integrated circuits 1979
 19 4 p. 309-
1 p.
 article
69 Gallium arsenide vapour phase epitaxy 1979
 19 4 p. 315-
1 p.
 article
70 Gallium nitride epitaxial growth 1979
 19 4 p. 314-
1 p.
 article
71 Generation-recombination noise at 77°K in silicon bars and JFETs 1979
 19 4 p. 316-
1 p.
 article
72 Graphical procedure for the easy execution of double three class attributes sampling plans: Uncurtailed as well as curtailed 1979
 19 4 p. 309-
1 p.
 article
73 Hall effect measurements on flash evaporated cadmium sulphide thin films 1979
 19 4 p. 316-
1 p.
 article
74 High density raises sights of ECL design 1979
 19 4 p. 310-
1 p.
 article
75 Highly insulating silicon nitride films 1979
 19 4 p. 316-
1 p.
 article
76 Hot time in store for ICs 1979
 19 4 p. 310-
1 p.
 article
77 Impurity band for sereened impurities in many-valley semiconductors 1979
 19 4 p. 316-
1 p.
 article
78 Influence of an impurity profile on the determination of interface states 1979
 19 4 p. 312-
1 p.
 article
79 InP/Langmuir-film m.i.s.f.e.t. 1979
 19 4 p. 313-
1 p.
 article
80 Integrated optical spectrum analyzer: an imminent “chip” 1979
 19 4 p. 309-
1 p.
 article
81 Interactive optimization of system reliability under multiple objectives 1979
 19 4 p. 306-
1 p.
 article
82 Internal conformal coatings for microcircuits 1979
 19 4 p. 317-
1 p.
 article
83 Japanese and Western quality—A contrast 1979
 19 4 p. 303-
1 p.
 article
84 k-out-of-n: G system with simultaneous failure and three repair policies Adachi, Kouichi
 1979
 19 4 p. 351-361
11 p.
 article
85 Lattice mismatch effects in the vapour phase pitaxial growth of ternary III-V semiconductors 1979
 19 4 p. 315-
1 p.
 article
86 Lead forming and outer lead bond pattern design for tapebonded hybrids 1979
 19 4 p. 316-317
2 p.
 article
87 Life data analysis for units inspected once for failure (quantal-response data) 1979
 19 4 p. 307-
1 p.
 article
88 Low temperature recombination into shallow donors in germanium: Transient case 1979
 19 4 p. 311-
1 p.
 article
89 Material characterization of thick film-resistor pastes 1979
 19 4 p. 317-
1 p.
 article
90 Microelectronics on the road to VLSI technique. Part 1: Procedural steps 1979
 19 4 p. 310-
1 p.
 article
91 Microwave heating and evaporating of a large electron-hole drop in pure Ge. 1979
 19 4 p. 311-
1 p.
 article
92 Minimum expected loss estimators of reliability and parameters of certain lifetime distributions 1979
 19 4 p. 307-
1 p.
 article
93 Model for failure rate curves Bosch, G.
 1979
 19 4 p. 371-375
5 p.
 article
94 Molecular beam epitaxy 1979
 19 4 p. 318-
1 p.
 article
95 Monte Carlo studies of transitions between excited donor states—resolution. Some open questions in electron-donor recombination 1979
 19 4 p. 314-
1 p.
 article
96 Multiphonon recombination processes 1979
 19 4 p. 312-
1 p.
 article
97 On a basic equation of reliability theory Beichelt, F.
 1979
 19 4 p. 367-369
3 p.
 article
98 On product reliability under random field loads 1979
 19 4 p. 307-
1 p.
 article
99 On the multiphonon capture rate in semiconductors 1979
 19 4 p. 313-314
2 p.
 article
100 Optimum ordering policies with lead time for an operating unit in preventive maintenance 1979
 19 4 p. 307-
1 p.
 article
101 Oxide isolation builds a better Schottky TTL 1979
 19 4 p. 309-
1 p.
 article
102 Partial and catastrophic failure analysis of a complex system Dhillon, Balbir S.
 1979
 19 4 p. 349-350
2 p.
 article
103 Path enumeration using flow graphs Rai, Suresh
 1979
 19 4 p. 391-393
3 p.
 article
104 Phonon replicas of the electron-hole liquid luminescence line in intrinsic silicon 1979
 19 4 p. 311-
1 p.
 article
105 Plastic encapsulated semiconductor devices—Bibliography III 1979
 19 4 p. 403-405
3 p.
 article
106 Plastics in microcircuit fabrication—Bibliography I 1979
 19 4 p. 399-401
3 p.
 article
107 Practical applications of accelerated testing of electronic devices 1979
 19 4 p. 308-
1 p.
 article
108 Practical troubleshooting of vacuum deposition processes and equipment for aluminum metalization 1979
 19 4 p. 318-
1 p.
 article
109 Probabilistic analysis of a two-unit parallel redundant system Subramanian, R.
 1979
 19 4 p. 321-323
3 p.
 article
110 Publications, notices, calls for papers, etc. 1979
 19 4 p. 291-302
12 p.
 article
111 Quality control in products liability 1979
 19 4 p. 305-
1 p.
 article
112 Radiation effects on silicon charge-coupled devices 1979
 19 4 p. 310-
1 p.
 article
113 Reactive sputter etching of thin films for pattern delineation 1979
 19 4 p. 318-
1 p.
 article
114 Recombination: A survey 1979
 19 4 p. 314-
1 p.
 article
115 Recombination at dislocations 1979
 19 4 p. 311-
1 p.
 article
116 Recombination beneath OHMIC contacts and adjacent oxide covered regions 1979
 19 4 p. 311-
1 p.
 article
117 Recombination effects in p-type silicon S.B.S.C.'s 1979
 19 4 p. 311-
1 p.
 article
118 Recombination of hot-electrons 1979
 19 4 p. 311-312
2 p.
 article
119 Reducing post-trim drift of thin-film resistors by optimizing YAG laser output characteristics 1979
 19 4 p. 318-
1 p.
 article
120 Reliability analysis for redundancy of industrial power distribution systems 1979
 19 4 p. 308-
1 p.
 article
121 Reliability assurance program of TESLA Communications Transmission Systems 1979
 19 4 p. 309-
1 p.
 article
122 Reliability of two dissimilar devices degrading in a periodic alternating sequence—Application to opto-isolators 1979
 19 4 p. 305-
1 p.
 article
123 Reliability optimization in systems with many failure modes 1979
 19 4 p. 305-306
2 p.
 article
124 Resonant tunneling via localized impurity states in metal-insulator-metal junctions 1979
 19 4 p. 313-
1 p.
 article
125 Silicon epitaxy 1979
 19 4 p. 313-
1 p.
 article
126 Silicon growth mechanisms 1979
 19 4 p. 310-
1 p.
 article
127 Simulation comparisons of point estimation methods in the 2-parameter weibull distribution Kuchii, Shoji
 1979
 19 4 p. 333-336
4 p.
 article
128 Single-chip n-MOS microcomputer processes signals in real time 1979
 19 4 p. 310-
1 p.
 article
129 Some aspects of reliable software packages Soi, Inder M.
 1979
 19 4 p. 379-386
8 p.
 article
130 Some considerations in the formulation of IC yield statistics 1979
 19 4 p. 305-
1 p.
 article
131 Spectroscopic determination of the position of the Fermilevel in doped amorphous hydrogenated silicon 1979
 19 4 p. 315-316
2 p.
 article
132 Study of Pt-GaAs interface states 1979
 19 4 p. 312-
1 p.
 article
133 Surface-induced valley-splitting in n-Channel (001) Silicon-MOS charge layer 1979
 19 4 p. 313-
1 p.
 article
134 Systematics of bound excitons and bound multiexciton complexes for shallow donors in silicon 1979
 19 4 p. 311-
1 p.
 article
135 System reliability analysis: A tutorial 1979
 19 4 p. 303-
1 p.
 article
136 Tests for “New Different than Repaired” 1979
 19 4 p. 308-
1 p.
 article
137 The detrimental influence of stacking faults on the refresh time of MOS memories 1979
 19 4 p. 305-
1 p.
 article
138 The effect of surface states on the characteristics of MIS field effect transistors 1979
 19 4 p. 312-
1 p.
 article
139 The first 70 semiconductor Auger processes 1979
 19 4 p. 313-
1 p.
 article
140 The generation of point defects in GaAs by electron-hole recombination at dislocations 1979
 19 4 p. 312-
1 p.
 article
141 The 64-K RAM: which way to refresh? 1979
 19 4 p. 310-
1 p.
 article
142 Theory of nonequilibrium properties of MIS capacitors including charge exchange of interface states with both bands. 1979
 19 4 p. 315-
1 p.
 article
143 Theory of Switching in p-n-insulator (tunnel)-metal devices. Part 1: Punchthrough mode 1979
 19 4 p. 316-
1 p.
 article
144 Thermal conductivity variation of silicon with temperature 1979
 19 4 p. 314-
1 p.
 article
145 Thermal oxidation of silicon using trichloroethylene 1979
 19 4 p. 313-
1 p.
 article
146 Thermistors G.W.A.D.,
 1979
 19 4 p. 319-
1 p.
 article
147 Thermocompression bondability of bare copper leads 1979
 19 4 p. 317-
1 p.
 article
148 The use of infra-red techniques in integrated circuit failure analysis 1979
 19 4 p. 304-
1 p.
 article
149 Thin anodic oxides on GaAs 1979
 19 4 p. 317-
1 p.
 article
150 Thin-film layers shrink rf inductors to chip size 1979
 19 4 p. 318-
1 p.
 article
151 Threshold voltage of m.o.s. transistors doped nonuniformly near the surface 1979
 19 4 p. 313-
1 p.
 article
152 Top-down algorithm for obtaining prime implicant sets of non-coherent fault trees 1979
 19 4 p. 307-
1 p.
 article
153 Two chips, two processes combine in per-channel coder-decoder 1979
 19 4 p. 309-
1 p.
 article
154 Two criteria for preventive maintenance 1979
 19 4 p. 307-
1 p.
 article
155 Two-unit redundant system with random switchover time and two types of repair Singh, S.P.
 1979
 19 4 p. 325-328
4 p.
 article
156 Unified approach to breakdown phenomena in silicon p-n junction 1979
 19 4 p. 304-
1 p.
 article
157 Use of microprocessors in multiple-processor systems 1979
 19 4 p. 310-
1 p.
 article
158 Vacuum systems for plasma etching, plasma deposition, and low pressure CVD 1979
 19 4 p. 316-
1 p.
 article
159 Variance and approximate confidence limits for probability and frequency of system failure 1979
 19 4 p. 308-
1 p.
 article
160 Voltage measurements on integrated circuits using the scanning electron microscope 1979
 19 4 p. 304-
1 p.
 article
161 Wafer flatness measurement considerations and equipment correlation 1979
 19 4 p. 318-
1 p.
 article
162 X-bandhigh-burnout silicon-Schottky mixer diodes 1979
 19 4 p. 304-
1 p.
 article
163 ZBA-10 electron beam pattern generator made by VEB Carl Zeiss JENA 1979
 19 4 p. 318-
1 p.
 article
                             163 results found
 
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