| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Accurate two-port models for distributed-RC notch filters
|
|
|
1978
|
18 |
3 |
p. 227-
1 p.
|
artikel
|
| 2 |
A channel conductance measuring technique for determining the interface properties of a SiO-InSb thin film transistor
|
|
|
1978
|
18 |
3 |
p. 234-
1 p.
|
artikel
|
| 3 |
A comprehensive review of the lognormal failure distribution with application to LED reliability
|
Jordan, A.S.
|
|
1978
|
18 |
3 |
p. 267-279
13 p.
|
artikel
|
| 4 |
Advanced operations and maintenance facilities for telephone networks
|
|
|
1978
|
18 |
3 |
p. 228-229
2 p.
|
artikel
|
| 5 |
A hybrid thin-film logic circuit using gallium arsenide field effect transistors
|
|
|
1978
|
18 |
3 |
p. 234-
1 p.
|
artikel
|
| 6 |
A model of charge injection at metal-insulator contacts
|
|
|
1978
|
18 |
3 |
p. 231-
1 p.
|
artikel
|
| 7 |
Analysis of static and dynamic characteristics in v.i.l.
|
|
|
1978
|
18 |
3 |
p. 231-
1 p.
|
artikel
|
| 8 |
Analysis of the deep depletion MOSFET and the use of the d.c. characteristics for determining bulk-channel chargecoupled device parameters
|
|
|
1978
|
18 |
3 |
p. 232-
1 p.
|
artikel
|
| 9 |
An analytical model for the low-emitter-impurity-concentration transistor
|
|
|
1978
|
18 |
3 |
p. 233-
1 p.
|
artikel
|
| 10 |
An exact derivation of contact resistance to planar devices
|
|
|
1978
|
18 |
3 |
p. 232-
1 p.
|
artikel
|
| 11 |
An introduction to plasma processing
|
|
|
1978
|
18 |
3 |
p. 235-
1 p.
|
artikel
|
| 12 |
An optical scanning system for semiconductor junction examination
|
|
|
1978
|
18 |
3 |
p. 228-
1 p.
|
artikel
|
| 13 |
An update: CCD and bubble memories
|
|
|
1978
|
18 |
3 |
p. 229-
1 p.
|
artikel
|
| 14 |
An X-Ray technique for evaluating the structure of films for device applications
|
|
|
1978
|
18 |
3 |
p. 234-
1 p.
|
artikel
|
| 15 |
Applications of reactive plasma practical microelectronic processing systems
|
|
|
1978
|
18 |
3 |
p. 234-
1 p.
|
artikel
|
| 16 |
A screening technique for establishing the stability of metal film resistors
|
|
|
1978
|
18 |
3 |
p. 234-
1 p.
|
artikel
|
| 17 |
A two failure modes system with cold stand-by units
|
Dhillon, Balbir S.
|
|
1978
|
18 |
3 |
p. 251-252
2 p.
|
artikel
|
| 18 |
Automated tape carrier bonding for hybrids
|
|
|
1978
|
18 |
3 |
p. 230-
1 p.
|
artikel
|
| 19 |
Beam tape plus automated handling cuts IC manufacturing costs
|
|
|
1978
|
18 |
3 |
p. 230-
1 p.
|
artikel
|
| 20 |
Board inventories mount
|
|
|
1978
|
18 |
3 |
p. 229-
1 p.
|
artikel
|
| 21 |
Bonding systems for microinterconnect tape technology
|
|
|
1978
|
18 |
3 |
p. 229-
1 p.
|
artikel
|
| 22 |
Breakdown walkout in planar p-n junctions
|
|
|
1978
|
18 |
3 |
p. 227-
1 p.
|
artikel
|
| 23 |
Calendar of international conferences, symposia, lectures and meetings of interest
|
|
|
1978
|
18 |
3 |
p. 205-209
5 p.
|
artikel
|
| 24 |
Carrier fluctuation noise in a MOSFET channel due to traps in the oxide
|
|
|
1978
|
18 |
3 |
p. 233-
1 p.
|
artikel
|
| 25 |
CCD and bubble memories: System implications
|
|
|
1978
|
18 |
3 |
p. 229-
1 p.
|
artikel
|
| 26 |
CCDs bring solid-state benefits to bulk storage for computers
|
|
|
1978
|
18 |
3 |
p. 230-
1 p.
|
artikel
|
| 27 |
Chemically selective, anisotropic plasma etching
|
|
|
1978
|
18 |
3 |
p. 235-
1 p.
|
artikel
|
| 28 |
Computerized fault tree analyses at Duke Power Company
|
|
|
1978
|
18 |
3 |
p. 229-
1 p.
|
artikel
|
| 29 |
Conductivity increase of amorphous Si and Ge by Mn
|
|
|
1978
|
18 |
3 |
p. 231-
1 p.
|
artikel
|
| 30 |
Crystal damage and the properties of implanted p-n junctions in silicon
|
|
|
1978
|
18 |
3 |
p. 235-
1 p.
|
artikel
|
| 31 |
C-V characteristics of metal-titanium dioxide-silicon capacitors
|
|
|
1978
|
18 |
3 |
p. 234-
1 p.
|
artikel
|
| 32 |
Data-link control chips: Bringing order to data protocols
|
|
|
1978
|
18 |
3 |
p. 230-
1 p.
|
artikel
|
| 33 |
Design assurance practices and procedures—A product liability prevention tool
|
|
|
1978
|
18 |
3 |
p. 227-
1 p.
|
artikel
|
| 34 |
Determining a production plasma etch cycle
|
|
|
1978
|
18 |
3 |
p. 235-
1 p.
|
artikel
|
| 35 |
Development of vendor quality control
|
|
|
1978
|
18 |
3 |
p. 229-
1 p.
|
artikel
|
| 36 |
Effects of annealing on gap states in amorphous Si films
|
|
|
1978
|
18 |
3 |
p. 234-
1 p.
|
artikel
|
| 37 |
Energy spectrum particularities of gapless semiconductors with impurities
|
|
|
1978
|
18 |
3 |
p. 231-
1 p.
|
artikel
|
| 38 |
Entirely diffused vertical channel JFET: Theory and experiment
|
|
|
1978
|
18 |
3 |
p. 232-
1 p.
|
artikel
|
| 39 |
Entrasim: A real-time traffic environment simulator for SPC switching systems
|
|
|
1978
|
18 |
3 |
p. 230-
1 p.
|
artikel
|
| 40 |
Environmental tests for connectors and contact materials: An evaluation of a method involving sulfur dioxide
|
|
|
1978
|
18 |
3 |
p. 228-
1 p.
|
artikel
|
| 41 |
Expanded package speeds design with new, one-chip microcomputer
|
|
|
1978
|
18 |
3 |
p. 230-
1 p.
|
artikel
|
| 42 |
Experimental comparison of lifetime-measurement techniques for m.o.s. capacitors
|
|
|
1978
|
18 |
3 |
p. 231-
1 p.
|
artikel
|
| 43 |
Fixed-interface-charge model for isotype heterojunctions
|
|
|
1978
|
18 |
3 |
p. 231-232
2 p.
|
artikel
|
| 44 |
Frequency limitations of transferred electron devices related to quality of contacts
|
|
|
1978
|
18 |
3 |
p. 229-
1 p.
|
artikel
|
| 45 |
Functional and deterministic tuning of hybrid integrated active filters
|
|
|
1978
|
18 |
3 |
p. 233-
1 p.
|
artikel
|
| 46 |
GaAs enhancement/depletion n-channel MOSFET
|
|
|
1978
|
18 |
3 |
p. 233-
1 p.
|
artikel
|
| 47 |
Hartree calculations for n-inversion layers on stressed silicon surfaces
|
|
|
1978
|
18 |
3 |
p. 231-
1 p.
|
artikel
|
| 48 |
Higher power ratings extend V-MOS FETs' dominion
|
|
|
1978
|
18 |
3 |
p. 230-
1 p.
|
artikel
|
| 49 |
How the bi-FET process benefits linear circuits
|
|
|
1978
|
18 |
3 |
p. 230-
1 p.
|
artikel
|
| 50 |
How VLSI impacts computer architecture
|
|
|
1978
|
18 |
3 |
p. 230-
1 p.
|
artikel
|
| 51 |
Hybrid circuit includes transformer
|
|
|
1978
|
18 |
3 |
p. 234-
1 p.
|
artikel
|
| 52 |
Influence of plasma treatment on the surface properties and coating behaviour of silicon dioxide and glass surfaces
|
|
|
1978
|
18 |
3 |
p. 235-
1 p.
|
artikel
|
| 53 |
Inorganic dielectric films for III–V compounds
|
|
|
1978
|
18 |
3 |
p. 235-
1 p.
|
artikel
|
| 54 |
Ion implantation damage in GaAs: A TEM study of the variation with ion species and stoichiometry
|
|
|
1978
|
18 |
3 |
p. 236-
1 p.
|
artikel
|
| 55 |
La macrolithographie: Principes generaux, outils, tendances
|
|
|
1978
|
18 |
3 |
p. 229-230
2 p.
|
artikel
|
| 56 |
Lifetime control by palladium diffusion in silicon
|
|
|
1978
|
18 |
3 |
p. 232-233
2 p.
|
artikel
|
| 57 |
Limitations and extended applications of Arrhenius equation in reliability engineering
|
Bora, J.S.
|
|
1978
|
18 |
3 |
p. 241-242
2 p.
|
artikel
|
| 58 |
Logic-state and signature analysis combine for fast, easy testing
|
|
|
1978
|
18 |
3 |
p. 229-
1 p.
|
artikel
|
| 59 |
LSI tester gets microprocessors to generate their own test patterns
|
|
|
1978
|
18 |
3 |
p. 228-
1 p.
|
artikel
|
| 60 |
Managing the flow of data is easy with programmable multiplexer
|
|
|
1978
|
18 |
3 |
p. 231-
1 p.
|
artikel
|
| 61 |
Measurement of charge-carrier behaviour in PiN diodes using a laser technique
|
|
|
1978
|
18 |
3 |
p. 236-
1 p.
|
artikel
|
| 62 |
Measurement of mobility profiles in GaAs at room temperature by the corbino effect
|
|
|
1978
|
18 |
3 |
p. 232-
1 p.
|
artikel
|
| 63 |
Measuring thermal resistance is the key to a cool semiconductor
|
|
|
1978
|
18 |
3 |
p. 228-
1 p.
|
artikel
|
| 64 |
Metallurgical considerations for beam tape assembly
|
|
|
1978
|
18 |
3 |
p. 230-
1 p.
|
artikel
|
| 65 |
Microcontroller includes a-d converter for lowest-cost analog interfacing
|
|
|
1978
|
18 |
3 |
p. 230-
1 p.
|
artikel
|
| 66 |
Microprocessor device reliability
|
|
|
1978
|
18 |
3 |
p. 228-
1 p.
|
artikel
|
| 67 |
Morphological stability analysis of growth from the vapour
|
|
|
1978
|
18 |
3 |
p. 230-
1 p.
|
artikel
|
| 68 |
Nanoelectronics as a technological revolution
|
|
|
1978
|
18 |
3 |
p. 229-
1 p.
|
artikel
|
| 69 |
One chip controls keyboard and display
|
|
|
1978
|
18 |
3 |
p. 231-
1 p.
|
artikel
|
| 70 |
On the ion implantation of the group VI impurities into GaAs
|
|
|
1978
|
18 |
3 |
p. 235-236
2 p.
|
artikel
|
| 71 |
Optimum inspection-ordering policies with salvage cost
|
Kaio, Naoto
|
|
1978
|
18 |
3 |
p. 253-257
5 p.
|
artikel
|
| 72 |
Plasma etching of films at high rates
|
|
|
1978
|
18 |
3 |
p. 235-
1 p.
|
artikel
|
| 73 |
Plastic encapsulated semiconductor devices—Bibliography II
|
|
|
1978
|
18 |
3 |
p. 291-292
2 p.
|
artikel
|
| 74 |
Polycrystalline silicon p-n junctions
|
|
|
1978
|
18 |
3 |
p. 232-
1 p.
|
artikel
|
| 75 |
Processor-based tester goes on site to isolate board faults automatically
|
|
|
1978
|
18 |
3 |
p. 229-
1 p.
|
artikel
|
| 76 |
Publications, notices, calls for papers, etc.
|
|
|
1978
|
18 |
3 |
p. 211-220
10 p.
|
artikel
|
| 77 |
Recent patents on microelectronics
|
|
|
1978
|
18 |
3 |
p. 221-225
5 p.
|
artikel
|
| 78 |
Reliability analysis for redundancy of industrial power distribution systems
|
Yu, Luke
|
|
1978
|
18 |
3 |
p. 259-265
7 p.
|
artikel
|
| 79 |
Reliability analysis of telecommunication networks using cutset approach
|
Livni, H.
|
|
1978
|
18 |
3 |
p. 285-289
5 p.
|
artikel
|
| 80 |
Reliability testing and screening: A general review paper
|
|
|
1978
|
18 |
3 |
p. 227-
1 p.
|
artikel
|
| 81 |
Short-term and long-term performance of electrolytic capacitors
|
Bora, J.S.
|
|
1978
|
18 |
3 |
p. 237-240
4 p.
|
artikel
|
| 82 |
Single-chip microcomputer expands its memory
|
|
|
1978
|
18 |
3 |
p. 231-
1 p.
|
artikel
|
| 83 |
Single hybrid package houses 12-bit data-acquisition system
|
|
|
1978
|
18 |
3 |
p. 234-
1 p.
|
artikel
|
| 84 |
Single-supply erasable PROM saves power with C-MOS process
|
|
|
1978
|
18 |
3 |
p. 230-
1 p.
|
artikel
|
| 85 |
Size and grain-boundary effects in the electrical conductivity of thin monocrystalline films
|
|
|
1978
|
18 |
3 |
p. 234-
1 p.
|
artikel
|
| 86 |
Size effects in metallic films
|
|
|
1978
|
18 |
3 |
p. 233-234
2 p.
|
artikel
|
| 87 |
Small signal equivalent circuit model for the metal-insulator-semiconductor tunnel diode
|
|
|
1978
|
18 |
3 |
p. 233-
1 p.
|
artikel
|
| 88 |
Spectroscopic analysis of r.f. plasmas
|
|
|
1978
|
18 |
3 |
p. 234-235
2 p.
|
artikel
|
| 89 |
Speech network maintenance by fault observation and evaluation
|
|
|
1978
|
18 |
3 |
p. 228-
1 p.
|
artikel
|
| 90 |
Stochastic analysis of temperature spikes contribution towards the damage in a component exposed to nuclear radiation environment
|
Lal, Krishan
|
|
1978
|
18 |
3 |
p. 281-284
4 p.
|
artikel
|
| 91 |
Switching phenomena in metal—insulator-n/p structures: Theory, experiment and applications
|
|
|
1978
|
18 |
3 |
p. 233-
1 p.
|
artikel
|
| 92 |
The assessment of the formal semiconductor device theory
|
|
|
1978
|
18 |
3 |
p. 231-
1 p.
|
artikel
|
| 93 |
The dependence of CGD dark current upon power dissipation
|
|
|
1978
|
18 |
3 |
p. 227-
1 p.
|
artikel
|
| 94 |
The design of a solid state trip system for nuclear power plants
|
Ozkaynak, A.I.
|
|
1978
|
18 |
3 |
p. 243-249
7 p.
|
artikel
|
| 95 |
The effect of hot spots on the noise characteristic of large-area bipolar transistors
|
|
|
1978
|
18 |
3 |
p. 228-
1 p.
|
artikel
|
| 96 |
The effects of high uniaxial stress on the far infra-red impurity spectra of high purity n- and p-type silicon
|
|
|
1978
|
18 |
3 |
p. 233-
1 p.
|
artikel
|
| 97 |
Thermal evolution of gas from a solid following detrapping and diffusion during a linear tempering schedule
|
|
|
1978
|
18 |
3 |
p. 232-
1 p.
|
artikel
|
| 98 |
The role of distributed parameters in the analysis of technological processes of semiconductor technique
|
|
|
1978
|
18 |
3 |
p. 231-
1 p.
|
artikel
|
| 99 |
The temperature stability of punch-through diodes
|
|
|
1978
|
18 |
3 |
p. 228-
1 p.
|
artikel
|
| 100 |
The versatile technique of r.f. plasma etching
|
|
|
1978
|
18 |
3 |
p. 235-
1 p.
|
artikel
|
| 101 |
Thickness and field dependence of defects in silicon dioxide
|
|
|
1978
|
18 |
3 |
p. 232-
1 p.
|
artikel
|
| 102 |
US Army Panama field test of plastic encapsulated devices
|
|
|
1978
|
18 |
3 |
p. 227-
1 p.
|
artikel
|
| 103 |
Variable microelectronics inductors
|
|
|
1978
|
18 |
3 |
p. 234-
1 p.
|
artikel
|
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