| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Accelerated lifetesting and failure modes of thin film W contacts on SiGe Thermoelectric alloys
|
|
|
1975
|
14 |
4 |
p. 337-
1 p.
|
artikel
|
| 2 |
A doped oxide diffusion source
|
|
|
1975
|
14 |
4 |
p. 346-
1 p.
|
artikel
|
| 3 |
Advanced linear circuits
|
Henderson, R.S.
|
|
1975
|
14 |
4 |
p. 353-
1 p.
|
artikel
|
| 4 |
Advances in solid planar dopant sources for silicon
|
|
|
1975
|
14 |
4 |
p. 346-
1 p.
|
artikel
|
| 5 |
A failure analysis technique for locating the fail site in MOSFET (LSI) logic chips with sputtered SIO2 passivation
|
|
|
1975
|
14 |
4 |
p. 340-
1 p.
|
artikel
|
| 6 |
A fast algorithm for reliability evaluation
|
|
|
1975
|
14 |
4 |
p. 335-
1 p.
|
artikel
|
| 7 |
A high density thick film multilayer process for LSI circuits
|
|
|
1975
|
14 |
4 |
p. 341-
1 p.
|
artikel
|
| 8 |
A metallurgical analysis of stress-corrosion cracking of Kovar package lead
|
|
|
1975
|
14 |
4 |
p. 337-
1 p.
|
artikel
|
| 9 |
A metallurgical basis for the non-destructive wire-bond pull-test
|
|
|
1975
|
14 |
4 |
p. 342-
1 p.
|
artikel
|
| 10 |
An electronic digital clock using integrated circuits for the data logger scanner and recording annunciator system of a nuclear power reactor
|
|
|
1975
|
14 |
4 |
p. 343-344
2 p.
|
artikel
|
| 11 |
An elementary guide to reliability
|
A.G.O.,
|
|
1975
|
14 |
4 |
p. 351-
1 p.
|
artikel
|
| 12 |
A new approach to fault locating T1 repeatered lines
|
|
|
1975
|
14 |
4 |
p. 340-
1 p.
|
artikel
|
| 13 |
A new method to determine the failure frequency of a complex system
|
|
|
1975
|
14 |
4 |
p. 338-
1 p.
|
artikel
|
| 14 |
An investigation of RF sputter etched silicon surfaces using helium ion backscatter
|
|
|
1975
|
14 |
4 |
p. 345-
1 p.
|
artikel
|
| 15 |
Application of engineering in micro-electronic industries
|
G.W.A.D.,
|
|
1975
|
14 |
4 |
p. 351-
1 p.
|
artikel
|
| 16 |
Applications of MOS microprogrammable products
|
Shenton, G.D.
|
|
1975
|
14 |
4 |
p. 361-
1 p.
|
artikel
|
| 17 |
Approximately optimum confidence bounds on series- and parallel-system reliability for systems with binomial subsystem data
|
|
|
1975
|
14 |
4 |
p. 340-
1 p.
|
artikel
|
| 18 |
A proposed numerical solution for the diffusion equation
|
|
|
1975
|
14 |
4 |
p. 346-
1 p.
|
artikel
|
| 19 |
A reliability problem treated by the additional event method
|
|
|
1975
|
14 |
4 |
p. 338-339
2 p.
|
artikel
|
| 20 |
A review of the theory and technology for OHMIC contacts to Group III–V compound semiconductors
|
|
|
1975
|
14 |
4 |
p. 347-
1 p.
|
artikel
|
| 21 |
A saddle field ion source of spherical configuration for etching and thinning applications
|
|
|
1975
|
14 |
4 |
p. 348-
1 p.
|
artikel
|
| 22 |
A sealed two-level metal system using tungsten
|
|
|
1975
|
14 |
4 |
p. 342-
1 p.
|
artikel
|
| 23 |
A sequential testing procedure for a system's state identification
|
|
|
1975
|
14 |
4 |
p. 339-
1 p.
|
artikel
|
| 24 |
A single chip 16-bit microprocessor for general application
|
Fox, W.A.
|
|
1975
|
14 |
4 |
p. 389-397
9 p.
|
artikel
|
| 25 |
A solution for melt-level control when growing Czochralski silicon crystals in hemispherical quartz crucibles
|
|
|
1975
|
14 |
4 |
p. 347-
1 p.
|
artikel
|
| 26 |
A theoretical and experimental study of recombination in silicon p-n Junctions
|
|
|
1975
|
14 |
4 |
p. 346-
1 p.
|
artikel
|
| 27 |
A truncated sequential test for constant failure rate
|
|
|
1975
|
14 |
4 |
p. 340-
1 p.
|
artikel
|
| 28 |
Automation in CVD wafer processing
|
|
|
1975
|
14 |
4 |
p. 342-
1 p.
|
artikel
|
| 29 |
Availability models of maintained systems
|
|
|
1975
|
14 |
4 |
p. 340-
1 p.
|
artikel
|
| 30 |
Avalanche injection into the oxide in silicon gatecontrolled devices—II. Experimental results
|
|
|
1975
|
14 |
4 |
p. 348-
1 p.
|
artikel
|
| 31 |
Avalanche injection into the oxide in silicon gatecontrolled devices—I. Theory
|
|
|
1975
|
14 |
4 |
p. 346-
1 p.
|
artikel
|
| 32 |
Base retardation in implanted-diffused transistors
|
|
|
1975
|
14 |
4 |
p. 349-
1 p.
|
artikel
|
| 33 |
Bayesian confidence bounds for the Weibull failure model
|
|
|
1975
|
14 |
4 |
p. 335-
1 p.
|
artikel
|
| 34 |
Boron diffusion in polycrystalline silicon layers
|
|
|
1975
|
14 |
4 |
p. 347-
1 p.
|
artikel
|
| 35 |
Boron tribromide as a diffusion source
|
|
|
1975
|
14 |
4 |
p. 345-
1 p.
|
artikel
|
| 36 |
Calendar of international conferences, symposia, lectures and meetings of interest
|
|
|
1975
|
14 |
4 |
p. 325-326
2 p.
|
artikel
|
| 37 |
CDI—its capability and application
|
|
|
1975
|
14 |
4 |
p. 343-
1 p.
|
artikel
|
| 38 |
CDI, the bipolar LSI technology with total systems integration capability
|
Krebs, P.
|
|
1975
|
14 |
4 |
p. 385-386
2 p.
|
artikel
|
| 39 |
Charge coupled devices and analogue signal processing
|
Vanstone, G.F.
|
|
1975
|
14 |
4 |
p. 367-
1 p.
|
artikel
|
| 40 |
Charge coupled devices, today and for the future
|
Burt, D.J.
|
|
1975
|
14 |
4 |
p. 379-381
3 p.
|
artikel
|
| 41 |
Chemically vapor deposited polycrystalline-silicon films
|
|
|
1975
|
14 |
4 |
p. 344-345
2 p.
|
artikel
|
| 42 |
CMOS an alternative to TTL?
|
Compton, J.
|
|
1975
|
14 |
4 |
p. 357-
1 p.
|
artikel
|
| 43 |
CMOS in today's economic climate
|
Henderson, R.S.
|
|
1975
|
14 |
4 |
p. 355-
1 p.
|
artikel
|
| 44 |
CMOS multiplex data communication offers advantages in different applications
|
|
|
1975
|
14 |
4 |
p. 343-
1 p.
|
artikel
|
| 45 |
Controlling data communication systems
|
|
|
1975
|
14 |
4 |
p. 343-
1 p.
|
artikel
|
| 46 |
Cooling integrated circuits in computers
|
|
|
1975
|
14 |
4 |
p. 341-
1 p.
|
artikel
|
| 47 |
Crystal growth
|
|
|
1975
|
14 |
4 |
p. 351-352
2 p.
|
artikel
|
| 48 |
Current-voltage characteristics of silicon metallic-silicide interfaces
|
|
|
1975
|
14 |
4 |
p. 344-
1 p.
|
artikel
|
| 49 |
Custom design perspectives
|
Pickvance, E.
|
|
1975
|
14 |
4 |
p. 383-
1 p.
|
artikel
|
| 50 |
Czochralski silicon crystal growth at reduced pressures
|
|
|
1975
|
14 |
4 |
p. 344-
1 p.
|
artikel
|
| 51 |
Damage profiles in silicon and their impact on device reliability. Technical rept. No. 3
|
|
|
1975
|
14 |
4 |
p. 342-
1 p.
|
artikel
|
| 52 |
Degradation studies in GaAs0·6P0·4 Light-emitting diodes
|
|
|
1975
|
14 |
4 |
p. 336-
1 p.
|
artikel
|
| 53 |
Design of high reliability Mica capacitor for submarine cable repeaters
|
|
|
1975
|
14 |
4 |
p. 336-
1 p.
|
artikel
|
| 54 |
Destructive D.C. breakdown in “built-up” barium stearate films
|
|
|
1975
|
14 |
4 |
p. 336-
1 p.
|
artikel
|
| 55 |
Determination of reliability using event-based Monte Carlo simulation
|
|
|
1975
|
14 |
4 |
p. 340-
1 p.
|
artikel
|
| 56 |
Determination of Si-metal work function differences by MOS capacitance technique
|
|
|
1975
|
14 |
4 |
p. 345-
1 p.
|
artikel
|
| 57 |
Developments in monolithic FET-input amplifiers
|
Fullagar, D.
|
|
1975
|
14 |
4 |
p. 375-
1 p.
|
artikel
|
| 58 |
Diagnostic testing of MOS random acess memories
|
|
|
1975
|
14 |
4 |
p. 343-
1 p.
|
artikel
|
| 59 |
Diffusion pumps and their operation
|
|
|
1975
|
14 |
4 |
p. 348-349
2 p.
|
artikel
|
| 60 |
Digital IC applications—hybrid interconnection of digital circuits
|
|
|
1975
|
14 |
4 |
p. 342-
1 p.
|
artikel
|
| 61 |
Editorial: Special seminex '75 edition
|
Dummer, G.W.A.
|
|
1975
|
14 |
4 |
p. 321-
1 p.
|
artikel
|
| 62 |
Effect of deep impurity levels on Schottky barrier diode characteristics
|
|
|
1975
|
14 |
4 |
p. 344-
1 p.
|
artikel
|
| 63 |
Electron-hole drops in silicon
|
|
|
1975
|
14 |
4 |
p. 348-
1 p.
|
artikel
|
| 64 |
Energy levels and concentration for platinum in silicon
|
|
|
1975
|
14 |
4 |
p. 347-
1 p.
|
artikel
|
| 65 |
EPR evidence of the self-interstitials in neutronirradiated silicon
|
|
|
1975
|
14 |
4 |
p. 344-
1 p.
|
artikel
|
| 66 |
Evaluation of maintenance policies using Markov Chains and fault free analysis
|
|
|
1975
|
14 |
4 |
p. 338-
1 p.
|
artikel
|
| 67 |
Facilities, equipment and manufacturing operations for circuit deposition and testing
|
|
|
1975
|
14 |
4 |
p. 342-
1 p.
|
artikel
|
| 68 |
Failure mechanism on accelerated A.C. test for high voltage capacitors
|
|
|
1975
|
14 |
4 |
p. 336-
1 p.
|
artikel
|
| 69 |
Failure mechanisms in gold metallized sealed junction devices
|
|
|
1975
|
14 |
4 |
p. 337-
1 p.
|
artikel
|
| 70 |
Finding the better of two similar designs by Monte Carlo techniques
|
|
|
1975
|
14 |
4 |
p. 339-
1 p.
|
artikel
|
| 71 |
Fine structures of indirect exciton absorption in phosphorus-doped silicon
|
|
|
1975
|
14 |
4 |
p. 347-348
2 p.
|
artikel
|
| 72 |
Forbidden band width change in semiconductor substitution alloys
|
|
|
1975
|
14 |
4 |
p. 345-
1 p.
|
artikel
|
| 73 |
Four-chip microprocessor family reduces system parts count
|
|
|
1975
|
14 |
4 |
p. 343-
1 p.
|
artikel
|
| 74 |
Frequency and duration concepts in system reliability evaluation
|
|
|
1975
|
14 |
4 |
p. 338-
1 p.
|
artikel
|
| 75 |
Graphical method for determining the flat band voltage for silicon on sapphire
|
|
|
1975
|
14 |
4 |
p. 345-
1 p.
|
artikel
|
| 76 |
Graph representation and diagnosis for multiunit faults
|
|
|
1975
|
14 |
4 |
p. 340-
1 p.
|
artikel
|
| 77 |
High speed bipolar monolithic memories
|
|
|
1975
|
14 |
4 |
p. 343-
1 p.
|
artikel
|
| 78 |
Hybrid technology applied to the chip interconnection problem
|
Kirby, P.L.
|
|
1975
|
14 |
4 |
p. 369-
1 p.
|
artikel
|
| 79 |
Improved confidence bounds applied to reliability
|
|
|
1975
|
14 |
4 |
p. 335-
1 p.
|
artikel
|
| 80 |
Impurity profile in silicon epitaxial wafer with buried layers
|
|
|
1975
|
14 |
4 |
p. 344-
1 p.
|
artikel
|
| 81 |
Insight into standby redundancy via unreliability
|
|
|
1975
|
14 |
4 |
p. 338-
1 p.
|
artikel
|
| 82 |
Instabilities in double dielectric structures
|
|
|
1975
|
14 |
4 |
p. 339-
1 p.
|
artikel
|
| 83 |
Interdiffusion in electroplated tin-nickel on gold
|
|
|
1975
|
14 |
4 |
p. 336-
1 p.
|
artikel
|
| 84 |
Interface instabilities
|
|
|
1975
|
14 |
4 |
p. 337-
1 p.
|
artikel
|
| 85 |
Interpretation de certaines proprietes de films granulaires de nickel
|
|
|
1975
|
14 |
4 |
p. 348-
1 p.
|
artikel
|
| 86 |
Intrinsic safety foils explosive situations
|
|
|
1975
|
14 |
4 |
p. 339-
1 p.
|
artikel
|
| 87 |
Ion-implanted-base-transistor h FE dispersion and low frequency noise performance
|
|
|
1975
|
14 |
4 |
p. 349-
1 p.
|
artikel
|
| 88 |
ION instabilities in MOS structures
|
|
|
1975
|
14 |
4 |
p. 339-
1 p.
|
artikel
|
| 89 |
ISSCC special report: Bipolar moves up to LSI
|
|
|
1975
|
14 |
4 |
p. 335-
1 p.
|
artikel
|
| 90 |
Leak detection of integrated circuits and other semiconductor devices on multilayer circuit boards
|
|
|
1975
|
14 |
4 |
p. 339-340
2 p.
|
artikel
|
| 91 |
Letter to the Editor
|
Shove, Miss P.L.
|
|
1975
|
14 |
4 |
p. 323-
1 p.
|
artikel
|
| 92 |
Lifetime measurements in silicon epitaxial materials
|
|
|
1975
|
14 |
4 |
p. 335-336
2 p.
|
artikel
|
| 93 |
Looking inside semiconductor devices
|
|
|
1975
|
14 |
4 |
p. 346-
1 p.
|
artikel
|
| 94 |
Measurements on depletion-mode field effect transistors and buried channel MOS capacitors for the characterization of bulk transfer charge-coupled devices
|
|
|
1975
|
14 |
4 |
p. 345-
1 p.
|
artikel
|
| 95 |
Methods for calculating the reliability function for systems subjected to random stresses
|
|
|
1975
|
14 |
4 |
p. 339-
1 p.
|
artikel
|
| 96 |
Microprocessors for everyday applications
|
Kirk, B.R.
|
|
1975
|
14 |
4 |
p. 377-378
2 p.
|
artikel
|
| 97 |
Minimizing downtime for electronics switching systems
|
|
|
1975
|
14 |
4 |
p. 343-
1 p.
|
artikel
|
| 98 |
Mission reliability for a redundant repairable system with two dissimilar units
|
|
|
1975
|
14 |
4 |
p. 338-
1 p.
|
artikel
|
| 99 |
MNOS technology and non-volatile logic
|
Bostock, D.
|
|
1975
|
14 |
4 |
p. 359-
1 p.
|
artikel
|
| 100 |
Monolithic dual darlington in plastic
|
Romano, A.
|
|
1975
|
14 |
4 |
p. 398-
1 p.
|
artikel
|
| 101 |
Multilayer interconnection techniques applied to high speed computer systems
|
|
|
1975
|
14 |
4 |
p. 343-
1 p.
|
artikel
|
| 102 |
Nichrome resistor failures as studied by X-ray photoelectron spectroscopy (XPS or ESCA)
|
|
|
1975
|
14 |
4 |
p. 337-
1 p.
|
artikel
|
| 103 |
Numerical solution and inference for interval-reliability of repairable components
|
|
|
1975
|
14 |
4 |
p. 340-
1 p.
|
artikel
|
| 104 |
Observations of sputtering damage using the field-ion microscope
|
|
|
1975
|
14 |
4 |
p. 348-
1 p.
|
artikel
|
| 105 |
On prediction of survival time for individual systems
|
|
|
1975
|
14 |
4 |
p. 339-
1 p.
|
artikel
|
| 106 |
On the design of fault diagnostic networks for combinational logic circuits
|
|
|
1975
|
14 |
4 |
p. 339-
1 p.
|
artikel
|
| 107 |
On the experimental electron distribution in silicon
|
|
|
1975
|
14 |
4 |
p. 345-
1 p.
|
artikel
|
| 108 |
On the time dependency of the avalanche process in semiconductors
|
|
|
1975
|
14 |
4 |
p. 347-
1 p.
|
artikel
|
| 109 |
Operational availability and reliability model
|
|
|
1975
|
14 |
4 |
p. 338-
1 p.
|
artikel
|
| 110 |
Optimization of system reliability by a new nonlinear integer programming procedure
|
|
|
1975
|
14 |
4 |
p. 341-
1 p.
|
artikel
|
| 111 |
Pooling life-test data by means of the Empirical Bayes method
|
|
|
1975
|
14 |
4 |
p. 335-
1 p.
|
artikel
|
| 112 |
Practical interference microscopical surface measurements particularly in semiconductor technology and microelectronics
|
|
|
1975
|
14 |
4 |
p. 341-
1 p.
|
artikel
|
| 113 |
Pre-secondary breakdown behaviour of silicon epitaxial diodes
|
|
|
1975
|
14 |
4 |
p. 347-
1 p.
|
artikel
|
| 114 |
Problems and trends in the manufacture of thin layers for electrical engineering
|
|
|
1975
|
14 |
4 |
p. 348-
1 p.
|
artikel
|
| 115 |
Process monitoring in transistor production
|
|
|
1975
|
14 |
4 |
p. 341-
1 p.
|
artikel
|
| 116 |
Publications, notices, call for papers, Etc.
|
|
|
1975
|
14 |
4 |
p. 327-328
2 p.
|
artikel
|
| 117 |
Purity of chemicals for semiconductor processing
|
|
|
1975
|
14 |
4 |
p. 342-343
2 p.
|
artikel
|
| 118 |
Radiation-stimulated failure mechanism in a dielectrically isolated integrated circuit
|
|
|
1975
|
14 |
4 |
p. 337-338
2 p.
|
artikel
|
| 119 |
RC active filters for microelectronic realization
|
|
|
1975
|
14 |
4 |
p. 343-
1 p.
|
artikel
|
| 120 |
Reaction of sputtered Pt films on GaAs
|
|
|
1975
|
14 |
4 |
p. 347-
1 p.
|
artikel
|
| 121 |
Recent developments in digital electronics
|
Dean, K.J.
|
|
1975
|
14 |
4 |
p. 373-
1 p.
|
artikel
|
| 122 |
Recent developments in pumping methods increase production capability
|
|
|
1975
|
14 |
4 |
p. 348-
1 p.
|
artikel
|
| 123 |
Reliability analysis of logic circuits
|
|
|
1975
|
14 |
4 |
p. 341-
1 p.
|
artikel
|
| 124 |
Reliability aspects of nichrome fusible link prom's (programmable read only memories)
|
|
|
1975
|
14 |
4 |
p. 338-
1 p.
|
artikel
|
| 125 |
Sample size for selecting the better of two Weibull populations
|
|
|
1975
|
14 |
4 |
p. 335-
1 p.
|
artikel
|
| 126 |
Scanning electron microscopy and related electron beam techniques in IC technology
|
|
|
1975
|
14 |
4 |
p. 349-
1 p.
|
artikel
|
| 127 |
SEM evaluation of metallization on semiconductors
|
|
|
1975
|
14 |
4 |
p. 342-
1 p.
|
artikel
|
| 128 |
Semiconductor heterojunctions
|
Hampshire, M.J.
|
|
1975
|
14 |
4 |
p. 351-
1 p.
|
artikel
|
| 129 |
Sensitivity of current pulse burn-out testing to the geometry of defects in aluminium metallization
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1975
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14 |
4 |
p. 337-
1 p.
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artikel
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| 130 |
Shallow impurity states in semiconductors: absorption cross-sections, excitation rates and capture cross-sections
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1975
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14 |
4 |
p. 346-
1 p.
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artikel
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| 131 |
Silicon dioxide masking of phosphorus diffucion in silicon
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1975
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14 |
4 |
p. 345-
1 p.
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artikel
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| 132 |
SOAR—the basis for reliable power circuit design. Part I: Power transistor limitations and ratings
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1975
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14 |
4 |
p. 337-
1 p.
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artikel
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| 133 |
Specialized scanning electron microscopy voltage contrast techniques for LSI failure analysis
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1975
|
14 |
4 |
p. 339-
1 p.
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artikel
|
| 134 |
Studies in cascade reliability I
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1975
|
14 |
4 |
p. 341-
1 p.
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artikel
|
| 135 |
Substrate choice and resultant hybrid construction techniques
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Freeman, G.S.
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1975
|
14 |
4 |
p. 371-
1 p.
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artikel
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| 136 |
Techniques in failure analysis of MOS devices
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1975
|
14 |
4 |
p. 336-337
2 p.
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artikel
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| 137 |
The defect structure of silver-doped CdS
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1975
|
14 |
4 |
p. 346-347
2 p.
|
artikel
|
| 138 |
The mechanism of r.f. spike burn-out in Schottky barrier microwave mixers
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1975
|
14 |
4 |
p. 337-
1 p.
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artikel
|
| 139 |
Theory of core excitons in semiconductors
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1975
|
14 |
4 |
p. 344-
1 p.
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artikel
|
| 140 |
The reliability of Epoxy as a die-attach in digital and linear integrated circuits
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1975
|
14 |
4 |
p. 342-
1 p.
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artikel
|
| 141 |
Thermal equilibrium noise of space charge limited current in silicon for holes with field-dependent mobility
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1975
|
14 |
4 |
p. 344-
1 p.
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artikel
|
| 142 |
Thermal noise in ion-implanted MOSFETs
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1975
|
14 |
4 |
p. 349-
1 p.
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artikel
|
| 143 |
The role of crystal defects in transistor operation at high power levels
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1975
|
14 |
4 |
p. 336-
1 p.
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artikel
|
| 144 |
Thin oxide film effect on silicon N+P diodes breakdown voltage
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1975
|
14 |
4 |
p. 336-
1 p.
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artikel
|
| 145 |
Threshold energy effect on avalanche breakdown voltage in semiconductor junctions
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1975
|
14 |
4 |
p. 337-
1 p.
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artikel
|
| 146 |
Time dependent solution of a complex standby redundant system under preemptive repeat repair discipline
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1975
|
14 |
4 |
p. 338-
1 p.
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artikel
|
| 147 |
Tracer investigations on the diffusion of phosphorus from doped oxide sources
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1975
|
14 |
4 |
p. 345-346
2 p.
|
artikel
|
| 148 |
Transfer circuitry module technology
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1975
|
14 |
4 |
p. 341-342
2 p.
|
artikel
|
| 149 |
What can CCD do for you!
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Ross, M.
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1975
|
14 |
4 |
p. 363-365
3 p.
|
artikel
|
| 150 |
Worldwide wafer standardisation—fact or fancy
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1975
|
14 |
4 |
p. 341-
1 p.
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artikel
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