| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A current pulse screening test for metal step coverage—final report
|
|
|
1975
|
14 |
3 |
p. 263-
1 p.
|
artikel
|
| 2 |
Advances in low temperature die bonding techniques
|
|
|
1975
|
14 |
3 |
p. 272-
1 p.
|
artikel
|
| 3 |
A few examples of applying laser microspectral analysis in semiconductor engineering
|
|
|
1975
|
14 |
3 |
p. 285-
1 p.
|
artikel
|
| 4 |
Ake 13—Software reliability aspects
|
|
|
1975
|
14 |
3 |
p. 270-
1 p.
|
artikel
|
| 5 |
A life-test study of electromigration in microwave power transistors
|
|
|
1975
|
14 |
3 |
p. 265-
1 p.
|
artikel
|
| 6 |
A low power RC-coupled VHF amplifier designed for fabrication by hybrid microcircuit techniques. Technical memo
|
|
|
1975
|
14 |
3 |
p. 284-
1 p.
|
artikel
|
| 7 |
A model for the failure of bipolar silicon integrated circuits subjected to electrostatic discharge
|
|
|
1975
|
14 |
3 |
p. 264-
1 p.
|
artikel
|
| 8 |
An accurate computer analysis of relaxation effects in MOS capacitors
|
|
|
1975
|
14 |
3 |
p. 274-
1 p.
|
artikel
|
| 9 |
An alternative approach to a reliability problem
|
|
|
1975
|
14 |
3 |
p. 268-
1 p.
|
artikel
|
| 10 |
Analysis and improvement of a static shift register
|
|
|
1975
|
14 |
3 |
p. 275-
1 p.
|
artikel
|
| 11 |
Analyzing the interface of reliability and economics of unmanned satellites
|
|
|
1975
|
14 |
3 |
p. 267-268
2 p.
|
artikel
|
| 12 |
An application of Markov chains for the evaluation of the operating characteristics of chain sampling inspection plans
|
|
|
1975
|
14 |
3 |
p. 262-
1 p.
|
artikel
|
| 13 |
An approach for evaluating Polymer materials as protective coatings on hybrid microcircuits
|
|
|
1975
|
14 |
3 |
p. 284-285
2 p.
|
artikel
|
| 14 |
A new approach to reliability prediction
|
|
|
1975
|
14 |
3 |
p. 262-
1 p.
|
artikel
|
| 15 |
An integrated circuit two-tone generator
|
|
|
1975
|
14 |
3 |
p. 274-275
2 p.
|
artikel
|
| 16 |
An investigation into the use of computer aided design in thick film circuits
|
|
|
1975
|
14 |
3 |
p. 283-
1 p.
|
artikel
|
| 17 |
A note on reliability prediction of electronic equipment (MIL-HDBK-217B)
|
Reiche, H.
|
|
1975
|
14 |
3 |
p. 252-
1 p.
|
artikel
|
| 18 |
A personal view of some reliability activities in the United Kingdom
|
|
|
1975
|
14 |
3 |
p. 261-
1 p.
|
artikel
|
| 19 |
Application de la gravure ionique a la microelectronique
|
|
|
1975
|
14 |
3 |
p. 286-
1 p.
|
artikel
|
| 20 |
A program system for safeguarding the availability of the Siemens system EDS
|
|
|
1975
|
14 |
3 |
p. 269-
1 p.
|
artikel
|
| 21 |
Arinc research corporation five-day courses reliability and maintainability techniques
|
|
|
1975
|
14 |
3 |
p. 259-
1 p.
|
artikel
|
| 22 |
As clipper, IC comparator is improved by feedback
|
|
|
1975
|
14 |
3 |
p. 274-
1 p.
|
artikel
|
| 23 |
A self-consistent calculation of effective intrinsic concentration in heavily-doped silicon
|
|
|
1975
|
14 |
3 |
p. 280-
1 p.
|
artikel
|
| 24 |
A special type of reliable circuit
|
|
|
1975
|
14 |
3 |
p. 267-
1 p.
|
artikel
|
| 25 |
A stable delay multivibrator using a linear IC chip
|
|
|
1975
|
14 |
3 |
p. 274-
1 p.
|
artikel
|
| 26 |
A systems approach to the design of MOS memory components
|
|
|
1975
|
14 |
3 |
p. 275-
1 p.
|
artikel
|
| 27 |
A thin-film/semiconductor thermocouple for microwave power measurements
|
|
|
1975
|
14 |
3 |
p. 282-
1 p.
|
artikel
|
| 28 |
A treatment of impurity diffusion in oxidizing ambients
|
|
|
1975
|
14 |
3 |
p. 280-281
2 p.
|
artikel
|
| 29 |
A UHF thick film tuner
|
|
|
1975
|
14 |
3 |
p. 283-
1 p.
|
artikel
|
| 30 |
Automating the epitaxial process
|
|
|
1975
|
14 |
3 |
p. 271-
1 p.
|
artikel
|
| 31 |
Automation applied to repair and maintenance of electronic systems
|
|
|
1975
|
14 |
3 |
p. 269-
1 p.
|
artikel
|
| 32 |
Availibility as a criterion of system performance
|
|
|
1975
|
14 |
3 |
p. 269-270
2 p.
|
artikel
|
| 33 |
Avalanche-injected electron currents in SiO2 at high injection densities
|
|
|
1975
|
14 |
3 |
p. 279-
1 p.
|
artikel
|
| 34 |
Bayes estimation in life testing and reliability: a multivariate case
|
|
|
1975
|
14 |
3 |
p. 267-
1 p.
|
artikel
|
| 35 |
Better Bipolar-MOS process yields linear ICs with good ac and dc specs
|
|
|
1975
|
14 |
3 |
p. 271-
1 p.
|
artikel
|
| 36 |
Bipolar LSI computing elements usher in new era of digital design
|
|
|
1975
|
14 |
3 |
p. 274-
1 p.
|
artikel
|
| 37 |
Bipolar memories
|
|
|
1975
|
14 |
3 |
p. 276-
1 p.
|
artikel
|
| 38 |
Bi-polar technology. A re-evaluation
|
|
|
1975
|
14 |
3 |
p. 277-
1 p.
|
artikel
|
| 39 |
Bi-polar technology. Integrated injection logic—present and future
|
|
|
1975
|
14 |
3 |
p. 276-
1 p.
|
artikel
|
| 40 |
Calendar of international conferences, symposia, lectures and meetings of interest
|
|
|
1975
|
14 |
3 |
p. 251-252
2 p.
|
artikel
|
| 41 |
Characterisation of silicon metallization systems using energetic ion backscattering
|
|
|
1975
|
14 |
3 |
p. 278-
1 p.
|
artikel
|
| 42 |
Characterization of a chromium-gold deposition process for the production of thin film hybrid microcircuits
|
|
|
1975
|
14 |
3 |
p. 284-
1 p.
|
artikel
|
| 43 |
Charge-transfer devices filter complex communications signals
|
|
|
1975
|
14 |
3 |
p. 274-
1 p.
|
artikel
|
| 44 |
C-MOS—a status report
|
|
|
1975
|
14 |
3 |
p. 276-
1 p.
|
artikel
|
| 45 |
C-MOS specifications: Don't take them for granted
|
|
|
1975
|
14 |
3 |
p. 270-
1 p.
|
artikel
|
| 46 |
Comparative advantages of in-house custom design of MOS LSI
|
|
|
1975
|
14 |
3 |
p. 271-
1 p.
|
artikel
|
| 47 |
Comparison of the structure of amorphous Ge and GaAs
|
|
|
1975
|
14 |
3 |
p. 280-
1 p.
|
artikel
|
| 48 |
Compliant beam lead bonding
|
|
|
1975
|
14 |
3 |
p. 271-272
2 p.
|
artikel
|
| 49 |
Component reliability under environmental stress
|
|
|
1975
|
14 |
3 |
p. 266-
1 p.
|
artikel
|
| 50 |
Component reliability under nuclear radiation environment
|
|
|
1975
|
14 |
3 |
p. 263-
1 p.
|
artikel
|
| 51 |
Computer-aided sequential testing for equipment reliability
|
|
|
1975
|
14 |
3 |
p. 268-
1 p.
|
artikel
|
| 52 |
Computer controlled electron-beam projection mask aligner
|
|
|
1975
|
14 |
3 |
p. 285-
1 p.
|
artikel
|
| 53 |
Conduction mechanisms in thick film microcircuits. Semiannual technical report
|
|
|
1975
|
14 |
3 |
p. 285-
1 p.
|
artikel
|
| 54 |
Control of electrostatic discharge damage to semiconductors
|
|
|
1975
|
14 |
3 |
p. 265-
1 p.
|
artikel
|
| 55 |
Critical parameters in glass sealed ceramic packages
|
|
|
1975
|
14 |
3 |
p. 282-
1 p.
|
artikel
|
| 56 |
Current-voltage characteristics, dielectric breakdown and potential distribution measurements in Au-SiOx-Au thin film diodes and triodes
|
|
|
1975
|
14 |
3 |
p. 282-
1 p.
|
artikel
|
| 57 |
Decision theoretic approach to the design of reliability systems
|
Singh, N.
|
|
1975
|
14 |
3 |
p. 315-318
4 p.
|
artikel
|
| 58 |
Defect creation in electronic materials
|
|
|
1975
|
14 |
3 |
p. 263-
1 p.
|
artikel
|
| 59 |
Degradation of gold-germanium ohmic contact to n-GaAs
|
|
|
1975
|
14 |
3 |
p. 265-
1 p.
|
artikel
|
| 60 |
Degradation of oxide films due to radiation effects in exposure to plasmas in sputter deposition and backsputtering
|
|
|
1975
|
14 |
3 |
p. 278-
1 p.
|
artikel
|
| 61 |
Design of polymer resists for electron lithography
|
|
|
1975
|
14 |
3 |
p. 271-
1 p.
|
artikel
|
| 62 |
design of systems and circuits for maximum reliability or maximum production Yield
|
|
|
1975
|
14 |
3 |
p. 260-
1 p.
|
artikel
|
| 63 |
Design validation for reliable LSI circuits
|
|
|
1975
|
14 |
3 |
p. 266-
1 p.
|
artikel
|
| 64 |
Detection by Auger electron spectroscopy and removal by ozonization of photoresist residues
|
|
|
1975
|
14 |
3 |
p. 272-
1 p.
|
artikel
|
| 65 |
Determination of the semiconductor doping profile right up to its surface using the MIS capacitor
|
|
|
1975
|
14 |
3 |
p. 281-
1 p.
|
artikel
|
| 66 |
Diagnosis of equipment failures by pattern recognition
|
|
|
1975
|
14 |
3 |
p. 268-
1 p.
|
artikel
|
| 67 |
Die bond failure modes
|
|
|
1975
|
14 |
3 |
p. 264-
1 p.
|
artikel
|
| 68 |
Dielectric thin-film branching waveguide
|
|
|
1975
|
14 |
3 |
p. 282-
1 p.
|
artikel
|
| 69 |
Diffusion near an absorbing boundary
|
|
|
1975
|
14 |
3 |
p. 280-
1 p.
|
artikel
|
| 70 |
Diverse industry users clamber aboard the micropressor bandwagon
|
|
|
1975
|
14 |
3 |
p. 275-
1 p.
|
artikel
|
| 71 |
Effect of disorder on direct and indirect band gaps of semiconductor alloys
|
|
|
1975
|
14 |
3 |
p. 277-
1 p.
|
artikel
|
| 72 |
Effect of temperature and voltage sweep rate on C-V characteristics of MIS capacitors
|
|
|
1975
|
14 |
3 |
p. 273-
1 p.
|
artikel
|
| 73 |
Electrical characterization of complex microcircuits. Final technical report
|
|
|
1975
|
14 |
3 |
p. 270-
1 p.
|
artikel
|
| 74 |
Electromigration failure in Al thin films under constant and reversed d.c. powering
|
|
|
1975
|
14 |
3 |
p. 262-263
2 p.
|
artikel
|
| 75 |
Electron bombarded semiconductor devices
|
|
|
1975
|
14 |
3 |
p. 285-
1 p.
|
artikel
|
| 76 |
Electron irradiation damage in silicon containing carbon and diffused 18O
|
|
|
1975
|
14 |
3 |
p. 285-
1 p.
|
artikel
|
| 77 |
Erratum
|
|
|
1975
|
14 |
3 |
p. 319-
1 p.
|
artikel
|
| 78 |
Establishment of reliability data for power plant components by means of an information system
|
|
|
1975
|
14 |
3 |
p. 268-
1 p.
|
artikel
|
| 79 |
Extreme value characteristics of distributions of cumulative processes
|
|
|
1975
|
14 |
3 |
p. 261-
1 p.
|
artikel
|
| 80 |
Fabrication techniques for surface-acoustic-wave and thin-film optical devices
|
|
|
1975
|
14 |
3 |
p. 272-
1 p.
|
artikel
|
| 81 |
Failure analysis of AUTODIN microelectronics, technical rept.
|
|
|
1975
|
14 |
3 |
p. 265-
1 p.
|
artikel
|
| 82 |
Failure mechanisms in gold and aluminum microwave power transistors
|
|
|
1975
|
14 |
3 |
p. 264-265
2 p.
|
artikel
|
| 83 |
Failure mode effects and criticality analysis (FMECA) and planned maintenance applied to TXE 4 electronic switching system
|
|
|
1975
|
14 |
3 |
p. 270-
1 p.
|
artikel
|
| 84 |
Fault clearance in the periphery of stored-program controlled telephone switching systems with the aid of a central service computer (SC)
|
|
|
1975
|
14 |
3 |
p. 269-
1 p.
|
artikel
|
| 85 |
FCL: key partner in integrated-circuit design
|
|
|
1975
|
14 |
3 |
p. 271-
1 p.
|
artikel
|
| 86 |
Field-enhanced carrier generation in MOS capacitors
|
|
|
1975
|
14 |
3 |
p. 273-
1 p.
|
artikel
|
| 87 |
For solid-state watches the time is at hand
|
|
|
1975
|
14 |
3 |
p. 275-
1 p.
|
artikel
|
| 88 |
Frequency dependence of ΔV/Δ (C−2 ) of MOS capacitors
|
|
|
1975
|
14 |
3 |
p. 273-
1 p.
|
artikel
|
| 89 |
Fundamental physical limitations in integrated circuits
|
|
|
1975
|
14 |
3 |
p. 270-
1 p.
|
artikel
|
| 90 |
Further studies on thin film structures of metal-borosilicate glass-metal
|
|
|
1975
|
14 |
3 |
p. 282-
1 p.
|
artikel
|
| 91 |
Gas and smoke detector uses low-leakage MOS transistor
|
|
|
1975
|
14 |
3 |
p. 274-
1 p.
|
artikel
|
| 92 |
GEISHA semiconductor reliability studies. A portion of CHAIR-GEISHA—Final Report
|
|
|
1975
|
14 |
3 |
p. 266-
1 p.
|
artikel
|
| 93 |
Gold scavenging characteristics of bonding alloys
|
|
|
1975
|
14 |
3 |
p. 281-
1 p.
|
artikel
|
| 94 |
High reliability photodiodes for space applications
|
Brilman, M.
|
|
1975
|
14 |
3 |
p. 305-306
2 p.
|
artikel
|
| 95 |
High resolution Fourier transform spectroscopy of shallow acceptors in ultra-pure germanium
|
|
|
1975
|
14 |
3 |
p. 278-
1 p.
|
artikel
|
| 96 |
Hot hole anisotropic effect in silicon and germanium
|
|
|
1975
|
14 |
3 |
p. 278-
1 p.
|
artikel
|
| 97 |
Hybrid microcircuit reliability data
|
|
|
1975
|
14 |
3 |
p. 253-
1 p.
|
artikel
|
| 98 |
Hybrid passive components—packaging
|
|
|
1975
|
14 |
3 |
p. 284-
1 p.
|
artikel
|
| 99 |
IC op amp has C-MOS output
|
|
|
1975
|
14 |
3 |
p. 274-
1 p.
|
artikel
|
| 100 |
IC voltage regulators
|
|
|
1975
|
14 |
3 |
p. 276-
1 p.
|
artikel
|
| 101 |
I2L takes bipolar integration a significant step forward
|
|
|
1975
|
14 |
3 |
p. 273-
1 p.
|
artikel
|
| 102 |
Improved conventional photolithography by relief mask processing
|
|
|
1975
|
14 |
3 |
p. 281-
1 p.
|
artikel
|
| 103 |
Influence of carriers on the capacitance of p-n junctions with deep donors
|
|
|
1975
|
14 |
3 |
p. 278-279
2 p.
|
artikel
|
| 104 |
Integrated temperature transducers
|
|
|
1975
|
14 |
3 |
p. 274-
1 p.
|
artikel
|
| 105 |
Interfacing a source utilizing low perveance ion beam extraction to a beam transport system suitable for ion implantation
|
|
|
1975
|
14 |
3 |
p. 286-
1 p.
|
artikel
|
| 106 |
Ion implantation boosts threshold of JFET breakdown
|
|
|
1975
|
14 |
3 |
p. 285-
1 p.
|
artikel
|
| 107 |
Ion-implanted semiconductor devices
|
|
|
1975
|
14 |
3 |
p. 285-286
2 p.
|
artikel
|
| 108 |
Ionizable materials to produce ions for implantation
|
|
|
1975
|
14 |
3 |
p. 286-
1 p.
|
artikel
|
| 109 |
Large-area uniform evaporated thin films
|
|
|
1975
|
14 |
3 |
p. 283-
1 p.
|
artikel
|
| 110 |
Laser trimming of thick film resistors
|
|
|
1975
|
14 |
3 |
p. 285-
1 p.
|
artikel
|
| 111 |
LIC technology
|
|
|
1975
|
14 |
3 |
p. 276-
1 p.
|
artikel
|
| 112 |
Linear and interface circuits
|
|
|
1975
|
14 |
3 |
p. 276-
1 p.
|
artikel
|
| 113 |
Literature survey on structural reliability
|
|
|
1975
|
14 |
3 |
p. 262-
1 p.
|
artikel
|
| 114 |
Low firing temperature resistors for use on glass
|
|
|
1975
|
14 |
3 |
p. 283-
1 p.
|
artikel
|
| 115 |
Low-speed counter uses low-priced calculator chip
|
|
|
1975
|
14 |
3 |
p. 275-
1 p.
|
artikel
|
| 116 |
Low voltage dynamic MOS memory
|
|
|
1975
|
14 |
3 |
p. 275-
1 p.
|
artikel
|
| 117 |
LSI yield projections based upon test pattern results: an application to multilevel metal structures
|
|
|
1975
|
14 |
3 |
p. 272-273
2 p.
|
artikel
|
| 118 |
Marketing hybrid integrated circuits
|
|
|
1975
|
14 |
3 |
p. 282-
1 p.
|
artikel
|
| 119 |
Median-time-to-failure (MTF) of an L-Band power transistor under RF conditions
|
|
|
1975
|
14 |
3 |
p. 264-
1 p.
|
artikel
|
| 120 |
Metallization corrosion in silicon devices by moisture-induced electrolysis
|
|
|
1975
|
14 |
3 |
p. 263-264
2 p.
|
artikel
|
| 121 |
Metal-semiconductor contacts prepared by ion implantation
|
|
|
1975
|
14 |
3 |
p. 285-
1 p.
|
artikel
|
| 122 |
Method of calculation of the impurity obtained by a multiple diffusion process
|
|
|
1975
|
14 |
3 |
p. 277-278
2 p.
|
artikel
|
| 123 |
Method of predicting the reliability during the development of a switching system
|
|
|
1975
|
14 |
3 |
p. 269-
1 p.
|
artikel
|
| 124 |
Methods and procedures for computer based handling of components reliability data at FTL (The Swedish Military Electronics Laboratory)
|
|
|
1975
|
14 |
3 |
p. 263-
1 p.
|
artikel
|
| 125 |
Microcircuit device malfunction report
|
|
|
1975
|
14 |
3 |
p. 253-
1 p.
|
artikel
|
| 126 |
Microprocessor directs wafer-prober
|
|
|
1975
|
14 |
3 |
p. 272-
1 p.
|
artikel
|
| 127 |
Microprocessors expand industry applications of data acquisition
|
|
|
1975
|
14 |
3 |
p. 270-
1 p.
|
artikel
|
| 128 |
Millimeter-wave integrated circuits
|
|
|
1975
|
14 |
3 |
p. 275-
1 p.
|
artikel
|
| 129 |
Mixed-discipline monolithic integrated circuits—bipolar, MOS and COS/MOS technologies and future trends
|
|
|
1975
|
14 |
3 |
p. 276-
1 p.
|
artikel
|
| 130 |
Model of doped-oxide-source diffusion in silicon
|
|
|
1975
|
14 |
3 |
p. 278-
1 p.
|
artikel
|
| 131 |
Moisture in SC packages
|
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1975
|
14 |
3 |
p. 272-
1 p.
|
artikel
|
| 132 |
Molecular bonding conductive films
|
|
|
1975
|
14 |
3 |
p. 272-
1 p.
|
artikel
|
| 133 |
Monte-Carlo calculation of electron transport in polar semiconductors
|
|
|
1975
|
14 |
3 |
p. 279-
1 p.
|
artikel
|
| 134 |
MOS and bipolar ICs in consumer applications
|
|
|
1975
|
14 |
3 |
p. 275-276
2 p.
|
artikel
|
| 135 |
MOS in the telephone exchange
|
|
|
1975
|
14 |
3 |
p. 274-
1 p.
|
artikel
|
| 136 |
MOS technology—MOS a major factor
|
|
|
1975
|
14 |
3 |
p. 276-
1 p.
|
artikel
|
| 137 |
MOS technology. Opening statement
|
|
|
1975
|
14 |
3 |
p. 276-277
2 p.
|
artikel
|
| 138 |
N. Channel MOS memories—new possibilities for microprocessor memory design
|
|
|
1975
|
14 |
3 |
p. 275-
1 p.
|
artikel
|
| 139 |
New alumina substrate for hybrid integrated circuits
|
|
|
1975
|
14 |
3 |
p. 284-
1 p.
|
artikel
|
| 140 |
New applications of linear integrated circuits in the entertainment industry
|
|
|
1975
|
14 |
3 |
p. 275-
1 p.
|
artikel
|
| 141 |
New move towards electronic parts reliability standards
|
|
|
1975
|
14 |
3 |
p. 262-
1 p.
|
artikel
|
| 142 |
Non-ionic room temperature instabilities in MOS devices
|
|
|
1975
|
14 |
3 |
p. 280-
1 p.
|
artikel
|
| 143 |
Ohmic hole mobility in cubic semiconductors
|
|
|
1975
|
14 |
3 |
p. 277-
1 p.
|
artikel
|
| 144 |
On the software reliability
|
|
|
1975
|
14 |
3 |
p. 268-269
2 p.
|
artikel
|
| 145 |
Operational behaviour of a complex system having shelf-life of the components under preemptive resume repair discipline
|
|
|
1975
|
14 |
3 |
p. 264-
1 p.
|
artikel
|
| 146 |
Parametric effects in thin film niobium Josephson junctions
|
|
|
1975
|
14 |
3 |
p. 282-
1 p.
|
artikel
|
| 147 |
Photosensitive thick film paste
|
|
|
1975
|
14 |
3 |
p. 283-
1 p.
|
artikel
|
| 148 |
Physical and thermodynamic properties of semiconductor industry chemical materials
|
|
|
1975
|
14 |
3 |
p. 273-
1 p.
|
artikel
|
| 149 |
Plasma etching as applied to failure analysis
|
|
|
1975
|
14 |
3 |
p. 266-
1 p.
|
artikel
|
| 150 |
Plasma etching PROMS and other problems
|
|
|
1975
|
14 |
3 |
p. 273-
1 p.
|
artikel
|
| 151 |
Prediction of avalanche breakdown voltage in silicon step junctions
|
|
|
1975
|
14 |
3 |
p. 279-
1 p.
|
artikel
|
| 152 |
Principal component analysis of production data
|
|
|
1975
|
14 |
3 |
p. 267-
1 p.
|
artikel
|
| 153 |
Problems in the analysis of semiconductor device materials exposed to ionizing radiation
|
|
|
1975
|
14 |
3 |
p. 278-
1 p.
|
artikel
|
| 154 |
Process III—A new high performance bipolar process
|
|
|
1975
|
14 |
3 |
p. 271-
1 p.
|
artikel
|
| 155 |
Programmable surface acoustic wave devices utilizing hybrid microelectronic techniques
|
|
|
1975
|
14 |
3 |
p. 281-
1 p.
|
artikel
|
| 156 |
Projection mask alignment—problems and solutions
|
|
|
1975
|
14 |
3 |
p. 273-
1 p.
|
artikel
|
| 157 |
Properties of Au, Pt, Pd and Rh levels in silicon measured with a constant capacitance technique
|
|
|
1975
|
14 |
3 |
p. 279-
1 p.
|
artikel
|
| 158 |
Quality assurance and the large customer the modern concept
|
|
|
1975
|
14 |
3 |
p. 262-
1 p.
|
artikel
|
| 159 |
Radiation effects on semiconductor devices
|
|
|
1975
|
14 |
3 |
p. 270-
1 p.
|
artikel
|
| 160 |
Range and standard deviation of ion-implanted phosphorus and boron in silicon
|
|
|
1975
|
14 |
3 |
p. 286-
1 p.
|
artikel
|
| 161 |
Recent development in silicon-device technology at “LAMEL”
|
|
|
1975
|
14 |
3 |
p. 270-271
2 p.
|
artikel
|
| 162 |
Regulating voltage with just one quad IC and one supply
|
|
|
1975
|
14 |
3 |
p. 274-
1 p.
|
artikel
|
| 163 |
Reliabile software for SPC systems
|
|
|
1975
|
14 |
3 |
p. 269-
1 p.
|
artikel
|
| 164 |
Reliability achievement in the IBM 3750
|
|
|
1975
|
14 |
3 |
p. 269-
1 p.
|
artikel
|
| 165 |
Reliability analysis of a 2-dissimilar units redundant system with Erlang-failure and general repair distributions
|
|
|
1975
|
14 |
3 |
p. 269-
1 p.
|
artikel
|
| 166 |
Reliability analysis of large repairable systems
|
|
|
1975
|
14 |
3 |
p. 268-
1 p.
|
artikel
|
| 167 |
1975 reliability and maintainability symposium
|
|
|
1975
|
14 |
3 |
p. 253-259
7 p.
|
artikel
|
| 168 |
Reliability assessment of a semiconductor memory by design analysis
|
|
|
1975
|
14 |
3 |
p. 268-
1 p.
|
artikel
|
| 169 |
Reliability considerations in the design and fabrication of polysilicon fusable link PROM's
|
|
|
1975
|
14 |
3 |
p. 269-
1 p.
|
artikel
|
| 170 |
Reliability design of a maintained system
|
|
|
1975
|
14 |
3 |
p. 268-
1 p.
|
artikel
|
| 171 |
Reliability efforts in large European programs for military and commercial aircraft development
|
|
|
1975
|
14 |
3 |
p. 266-267
2 p.
|
artikel
|
| 172 |
Reliability evaluation of communication systems using flow graphs
|
|
|
1975
|
14 |
3 |
p. 268-
1 p.
|
artikel
|
| 173 |
Reliability of nondeteriorating devices
|
|
|
1975
|
14 |
3 |
p. 267-
1 p.
|
artikel
|
| 174 |
Reliability of silicon and gallium arsenide K a -bandIMPATT diodes
|
|
|
1975
|
14 |
3 |
p. 266-
1 p.
|
artikel
|
| 175 |
Reliability of statically controlled drives
|
Kohli, D.R.
|
|
1975
|
14 |
3 |
p. 287-292
6 p.
|
artikel
|
| 176 |
Reliability optimization through random search algorithm
|
|
|
1975
|
14 |
3 |
p. 267-
1 p.
|
artikel
|
| 177 |
Reliability prediction of silicon bipolar transistors by means of noise measurements
|
|
|
1975
|
14 |
3 |
p. 264-
1 p.
|
artikel
|
| 178 |
Reliability studies of Gunn diodes
|
|
|
1975
|
14 |
3 |
p. 264-
1 p.
|
artikel
|
| 179 |
Reliability study of an N-channel silicon gate FET with field shield
|
|
|
1975
|
14 |
3 |
p. 265-
1 p.
|
artikel
|
| 180 |
Reliability targets—are they valid and can they be specified
|
|
|
1975
|
14 |
3 |
p. 262-
1 p.
|
artikel
|
| 181 |
Results of production thermal cycle screening
|
|
|
1975
|
14 |
3 |
p. 266-
1 p.
|
artikel
|
| 182 |
Schottky components are byte-sized
|
|
|
1975
|
14 |
3 |
p. 274-
1 p.
|
artikel
|
| 183 |
Screenability and Rheology
|
|
|
1975
|
14 |
3 |
p. 284-
1 p.
|
artikel
|
| 184 |
Screen: Essential tool for thick film printing
|
|
|
1975
|
14 |
3 |
p. 284-
1 p.
|
artikel
|
| 185 |
Scribing and breaking of semiconductor wafers
|
|
|
1975
|
14 |
3 |
p. 272-
1 p.
|
artikel
|
| 186 |
See-through masks aid semiconductor device manufacturing
|
|
|
1975
|
14 |
3 |
p. 273-
1 p.
|
artikel
|
| 187 |
Semiconductor measurement technology: ARPA/NBS workshop I. Measurement problems in integrated circuit processing and assembly. Special publication
|
|
|
1975
|
14 |
3 |
p. 272-
1 p.
|
artikel
|
| 188 |
Semiconductor measurement technology: microelectronic ultrasonic bonding. Special publication
|
|
|
1975
|
14 |
3 |
p. 272-
1 p.
|
artikel
|
| 189 |
Sequential life tests
|
|
|
1975
|
14 |
3 |
p. 268-
1 p.
|
artikel
|
| 190 |
Signal-flow graphs in reliability theory
|
|
|
1975
|
14 |
3 |
p. 262-
1 p.
|
artikel
|
| 191 |
Silicone resins for semiconductor protection
|
|
|
1975
|
14 |
3 |
p. 270-
1 p.
|
artikel
|
| 192 |
Simple radiation defects in semiconductors and their temperature transformations
|
|
|
1975
|
14 |
3 |
p. 263-
1 p.
|
artikel
|
| 193 |
Simplification method of fault detection making monoterm degeneration compatible with functional completeness
|
|
|
1975
|
14 |
3 |
p. 268-
1 p.
|
artikel
|
| 194 |
Single-chip micro processor employs minicomputer word length
|
|
|
1975
|
14 |
3 |
p. 275-
1 p.
|
artikel
|
| 195 |
Some applications of regenerative stochastic processes to Reliability Theory—Part 1: Tutorial Introduction
|
|
|
1975
|
14 |
3 |
p. 261-262
2 p.
|
artikel
|
| 196 |
Some aspects of damage models
|
|
|
1975
|
14 |
3 |
p. 267-
1 p.
|
artikel
|
| 197 |
Some characteristics of ion implanted resistors
|
|
|
1975
|
14 |
3 |
p. 286-
1 p.
|
artikel
|
| 198 |
Some reliability aspects of electron bombarded semiconductor power devices
|
|
|
1975
|
14 |
3 |
p. 263-
1 p.
|
artikel
|
| 199 |
Some reliability characteristics of CRT cathode assemblies
|
|
|
1975
|
14 |
3 |
p. 264-
1 p.
|
artikel
|
| 200 |
Some thoughts on the reliability of telecommunication networks
|
|
|
1975
|
14 |
3 |
p. 269-
1 p.
|
artikel
|
| 201 |
Stability and deterioration mechanism of thick film resistors
|
|
|
1975
|
14 |
3 |
p. 281-
1 p.
|
artikel
|
| 202 |
State of reliability effort in Europe
|
|
|
1975
|
14 |
3 |
p. 261-
1 p.
|
artikel
|
| 203 |
Static electrificatio hazards in microelectronics production
|
|
|
1975
|
14 |
3 |
p. 270-
1 p.
|
artikel
|
| 204 |
Stationary room temperature MOS-C deep-depletion characteristics
|
|
|
1975
|
14 |
3 |
p. 280-
1 p.
|
artikel
|
| 205 |
Step-stress failure rate models for electronic components
|
|
|
1975
|
14 |
3 |
p. 263-
1 p.
|
artikel
|
| 206 |
Stochastic behaviour of a two-unit priority standby redundant system with repair
|
Nakagawa, Toshio
|
|
1975
|
14 |
3 |
p. 309-313
5 p.
|
artikel
|
| 207 |
Surface breakdown in silicon planar junctions—a computer-aided experimental determination of the critical field
|
|
|
1975
|
14 |
3 |
p. 279-
1 p.
|
artikel
|
| 208 |
Surface states in the conduction band region of Si
|
|
|
1975
|
14 |
3 |
p. 280-
1 p.
|
artikel
|
| 209 |
Surface-state spectra from thick-oxide MOS tunnel junctions
|
|
|
1975
|
14 |
3 |
p. 279-
1 p.
|
artikel
|
| 210 |
Susceptibility of semiconductor devices to thermal second breakdown
|
|
|
1975
|
14 |
3 |
p. 265-
1 p.
|
artikel
|
| 211 |
Technology teamwork—MOS and bipolar
|
|
|
1975
|
14 |
3 |
p. 275-
1 p.
|
artikel
|
| 212 |
The accelerated testing of plastic encapsulated semiconductor components
|
|
|
1975
|
14 |
3 |
p. 265-
1 p.
|
artikel
|
| 213 |
The advantages of thin film hybrids in instruments
|
|
|
1975
|
14 |
3 |
p. 282-
1 p.
|
artikel
|
| 214 |
The application of reliability and mainatainability techniques
|
|
|
1975
|
14 |
3 |
p. 259-260
2 p.
|
artikel
|
| 215 |
The case for component burn-in: the gain is well worth the price
|
|
|
1975
|
14 |
3 |
p. 266-
1 p.
|
artikel
|
| 216 |
The comparison of RF sputtering systems
|
|
|
1975
|
14 |
3 |
p. 281-
1 p.
|
artikel
|
| 217 |
The confusion in the quality field
|
|
|
1975
|
14 |
3 |
p. 262-
1 p.
|
artikel
|
| 218 |
The corrosive activity of fluxes
|
Bochenek, Andrzej
|
|
1975
|
14 |
3 |
p. 295-303
9 p.
|
artikel
|
| 219 |
The evaluation of radiation damaged epitaxial silicon
|
|
|
1975
|
14 |
3 |
p. 279-280
2 p.
|
artikel
|
| 220 |
The Ferranti CDI process and its achievements
|
|
|
1975
|
14 |
3 |
p. 271-
1 p.
|
artikel
|
| 221 |
The gate-controlled diode so measurement and steady-state lateral current flow in deeply depleted MOS structures
|
|
|
1975
|
14 |
3 |
p. 277-
1 p.
|
artikel
|
| 222 |
The impact of technological change in the semiconductor industry
|
|
|
1975
|
14 |
3 |
p. 277-
1 p.
|
artikel
|
| 223 |
The long-term reliability of plastics encapsulated microelectronic devices—corrosion and the role of adhesion
|
|
|
1975
|
14 |
3 |
p. 262-
1 p.
|
artikel
|
| 224 |
Thermal characteristics of ICs gain in importance
|
|
|
1975
|
14 |
3 |
p. 273-
1 p.
|
artikel
|
| 225 |
Thermally stimulated current measurements on silicon junctions produced by implantation of low energy boron ions
|
|
|
1975
|
14 |
3 |
p. 286-
1 p.
|
artikel
|
| 226 |
Thermally stimulated currents in thin films of silicon monoxide doped with metallic impurities
|
|
|
1975
|
14 |
3 |
p. 280-
1 p.
|
artikel
|
| 227 |
The systems reliability service and its generic techniques
|
|
|
1975
|
14 |
3 |
p. 261-
1 p.
|
artikel
|
| 228 |
Thick film hybrid audio amplifier circuits for low noise applications
|
|
|
1975
|
14 |
3 |
p. 283-
1 p.
|
artikel
|
| 229 |
Thick film hybrid circuits in medical applications
|
|
|
1975
|
14 |
3 |
p. 282-
1 p.
|
artikel
|
| 230 |
Thick-film hybrids in low-noise audio applications
|
|
|
1975
|
14 |
3 |
p. 282-
1 p.
|
artikel
|
| 231 |
Thick film techniques for hybrid integrated microwave circuits
|
|
|
1975
|
14 |
3 |
p. 282-
1 p.
|
artikel
|
| 232 |
Thin film circuit element production
|
|
|
1975
|
14 |
3 |
p. 283-
1 p.
|
artikel
|
| 233 |
Thin-film circuit processing on dielectric substrates
|
|
|
1975
|
14 |
3 |
p. 281-
1 p.
|
artikel
|
| 234 |
Thin film evaporation using the hot leading channel method. Part One—Calculation of the distribution of the density of particles falling on the substrate
|
|
|
1975
|
14 |
3 |
p. 282-283
2 p.
|
artikel
|
| 235 |
Thin film 7 GH z Non-degenerate paramp
|
|
|
1975
|
14 |
3 |
p. 284-
1 p.
|
artikel
|
| 236 |
Thin film structures with a gap width comparable to the film thickness fabricated by sputter etching
|
|
|
1975
|
14 |
3 |
p. 284-
1 p.
|
artikel
|
| 237 |
Tie set approach to determine the frequency of system failure
|
Singh, C.
|
|
1975
|
14 |
3 |
p. 293-294
2 p.
|
artikel
|
| 238 |
Time dependent breakdown in silicon dioxide films
|
|
|
1975
|
14 |
3 |
p. 264-
1 p.
|
artikel
|
| 239 |
Titanium-gold: high-reliability transistor metallisation
|
|
|
1975
|
14 |
3 |
p. 263-
1 p.
|
artikel
|
| 240 |
Towards a better understanding of screen print thickness control
|
|
|
1975
|
14 |
3 |
p. 284-
1 p.
|
artikel
|
| 241 |
Ultra-reliable voter switches, with a bibliography of mechanization
|
|
|
1975
|
14 |
3 |
p. 267-
1 p.
|
artikel
|
| 242 |
University research on microelectronics and on reliability
|
|
|
1975
|
14 |
3 |
p. 249-250
2 p.
|
artikel
|
| 243 |
Vacuum deposition rate measurements on thin polymer films
|
|
|
1975
|
14 |
3 |
p. 281-
1 p.
|
artikel
|
| 244 |
Vacuum systems for ion implantation equipment
|
|
|
1975
|
14 |
3 |
p. 286-
1 p.
|
artikel
|
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