nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
Accurate measurement of the work function of electron-hole drops in germanium
|
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|
1974 |
13 |
2 |
p. 81- 1 p. |
artikel |
2 |
A depletion load self-aligned technology
|
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|
1974 |
13 |
2 |
p. 79- 1 p. |
artikel |
3 |
A fast method for redundancy allocation
|
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|
1974 |
13 |
2 |
p. 77- 1 p. |
artikel |
4 |
A method of redundancy allocation
|
|
|
1974 |
13 |
2 |
p. 77- 1 p. |
artikel |
5 |
Analytic study of a stand-by redundant equipment with switching and shelf life failures
|
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|
1974 |
13 |
2 |
p. 77- 1 p. |
artikel |
6 |
A new interpretation of the valence band density of states of amorphous group IV-semiconductors
|
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|
1974 |
13 |
2 |
p. 82- 1 p. |
artikel |
7 |
Application of Low-Power current mode logic
|
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|
1974 |
13 |
2 |
p. 78- 1 p. |
artikel |
8 |
A production reactor for continuous deposition of silicon dioxide
|
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|
1974 |
13 |
2 |
p. 78- 1 p. |
artikel |
9 |
A review of new methods and attitudes in reliability engineering
|
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|
1974 |
13 |
2 |
p. 75- 1 p. |
artikel |
10 |
A test structure for controlling the process of manufacturing MOS circuits
|
|
|
1974 |
13 |
2 |
p. 78- 1 p. |
artikel |
11 |
Build power amplifiers with IC drivers
|
|
|
1974 |
13 |
2 |
p. 79-80 2 p. |
artikel |
12 |
Built-in getter-ion pumps
|
|
|
1974 |
13 |
2 |
p. 83- 1 p. |
artikel |
13 |
Burn-in programs for repairable systems
|
|
|
1974 |
13 |
2 |
p. 76- 1 p. |
artikel |
14 |
Calendar of international conferences, symposia, lectures and meetings of interest
|
|
|
1974 |
13 |
2 |
p. 61-62 2 p. |
artikel |
15 |
Complex system reliability with general repair time distributions under preemptive resume repair discipline
|
|
|
1974 |
13 |
2 |
p. 76-77 2 p. |
artikel |
16 |
Control of resistivity, microstructure, and stress in electron beam evaporated tungsten films
|
|
|
1974 |
13 |
2 |
p. 84- 1 p. |
artikel |
17 |
Cooperative effects between arsenic and boron in silicon during simultaneous diffusions from ion implanted and chemical source predepositions
|
|
|
1974 |
13 |
2 |
p. 83-84 2 p. |
artikel |
18 |
Courses
|
|
|
1974 |
13 |
2 |
p. 65- 1 p. |
artikel |
19 |
Cr-Cu and Cr-Cu-Cr thin film metallization
|
|
|
1974 |
13 |
2 |
p. 83- 1 p. |
artikel |
20 |
Custom LSI fades into background
|
|
|
1974 |
13 |
2 |
p. 77- 1 p. |
artikel |
21 |
Cylindrical diode continuous vacuum sputtering equipment for laboratory and high volume production
|
|
|
1974 |
13 |
2 |
p. 82-83 2 p. |
artikel |
22 |
Data processing, LSI will help to bring sight to the blind
|
|
|
1974 |
13 |
2 |
p. 80- 1 p. |
artikel |
23 |
Deionized water for integrated circuit fabrication
|
|
|
1974 |
13 |
2 |
p. 78- 1 p. |
artikel |
24 |
Development of generalized theory of floating-emitter potential based on studies of germanium and silicon transistors
|
|
|
1974 |
13 |
2 |
p. 81- 1 p. |
artikel |
25 |
Digital-IC models for computer-aided design. Part 2: TTL flip-flops
|
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|
1974 |
13 |
2 |
p. 77- 1 p. |
artikel |
26 |
Distribution of time to non-availability of a reliability system
|
|
|
1974 |
13 |
2 |
p. 77- 1 p. |
artikel |
27 |
Double diffused MOSFETs
|
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|
1974 |
13 |
2 |
p. 79- 1 p. |
artikel |
28 |
Effects of bulk trapping on the memory characteristics of thick-oxide MNOS variable-threshold capacitors
|
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|
1974 |
13 |
2 |
p. 78-79 2 p. |
artikel |
29 |
Effects of diffused nickel on the silicon-silicon dioxide interface
|
|
|
1974 |
13 |
2 |
p. 81- 1 p. |
artikel |
30 |
Effects of temperature on current instabilities caused by recombination centers in semiconductors
|
|
|
1974 |
13 |
2 |
p. 80- 1 p. |
artikel |
31 |
Encapsulation of high reliability devices
|
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|
1974 |
13 |
2 |
p. 76- 1 p. |
artikel |
32 |
Evaporation, sputtering and ion-plating; pros and cons
|
|
|
1974 |
13 |
2 |
p. 82- 1 p. |
artikel |
33 |
Exchange and dipolar fields in phosphorus-doped silicon measured by electron spin echoes
|
|
|
1974 |
13 |
2 |
p. 81- 1 p. |
artikel |
34 |
Failure analysis of linear ICs
|
|
|
1974 |
13 |
2 |
p. 75- 1 p. |
artikel |
35 |
Faulty-contact detection in communications systems
|
|
|
1974 |
13 |
2 |
p. 75- 1 p. |
artikel |
36 |
First oxide-isolated C-MOS circuits cut chip area by one-third
|
|
|
1974 |
13 |
2 |
p. 78- 1 p. |
artikel |
37 |
Formation kinetics and structure of Pd2Si films on Si
|
|
|
1974 |
13 |
2 |
p. 81-82 2 p. |
artikel |
38 |
High frequency small signal characteristics of the SCL heterojunction transistor
|
|
|
1974 |
13 |
2 |
p. 79- 1 p. |
artikel |
39 |
High resolution fabrication by ion beam sputtering
|
|
|
1974 |
13 |
2 |
p. 84- 1 p. |
artikel |
40 |
Hybrid microelectronic circuits the thick film
|
G.W.A.D., |
|
1974 |
13 |
2 |
p. 85- 1 p. |
artikel |
41 |
Hybrid microelectronics
|
|
|
1974 |
13 |
2 |
p. 69-72 4 p. |
artikel |
42 |
IC monostable SN74121 for easier detection of IR pulsed lasers
|
|
|
1974 |
13 |
2 |
p. 80- 1 p. |
artikel |
43 |
IC simulates power transistor
|
|
|
1974 |
13 |
2 |
p. 79- 1 p. |
artikel |
44 |
IC with load protection simulates power transistor
|
|
|
1974 |
13 |
2 |
p. 79- 1 p. |
artikel |
45 |
IEEE Reliability & Maintainability Symposium 1974
|
|
|
1974 |
13 |
2 |
p. 72-73 2 p. |
artikel |
46 |
Improve CRT-display systems with NMOS
|
|
|
1974 |
13 |
2 |
p. 79- 1 p. |
artikel |
47 |
Is there a reliable screen for VHF power transistors?
|
|
|
1974 |
13 |
2 |
p. 76- 1 p. |
artikel |
48 |
Life tests of SSI integrated circuits
|
Kemény, A.P. |
|
1974 |
13 |
2 |
p. 119-120 2 p. |
artikel |
49 |
Logic tester uses single trial procedure to troubleshoot digital IC boards
|
|
|
1974 |
13 |
2 |
p. 75- 1 p. |
artikel |
50 |
Low-power current mode logic
|
|
|
1974 |
13 |
2 |
p. 78- 1 p. |
artikel |
51 |
Low-temperature photocapacity measurement in MOS structure
|
|
|
1974 |
13 |
2 |
p. 81- 1 p. |
artikel |
52 |
Measurement of low densities of surface states at the Si-SiO2-interface
|
|
|
1974 |
13 |
2 |
p. 82- 1 p. |
artikel |
53 |
Measuring semi-conductor properties of thermoelectric materials
|
|
|
1974 |
13 |
2 |
p. 80- 1 p. |
artikel |
54 |
Metal-germanium Schottky barriers
|
|
|
1974 |
13 |
2 |
p. 80- 1 p. |
artikel |
55 |
Metal semiconductor contact: resistivity and noise
|
|
|
1974 |
13 |
2 |
p. 80- 1 p. |
artikel |
56 |
Method for fast-switching the ion beam in an ion-implantation facility
|
|
|
1974 |
13 |
2 |
p. 84- 1 p. |
artikel |
57 |
MIS capacitance and derivative of capacitance, with application to non-parabolic band semiconductors
|
|
|
1974 |
13 |
2 |
p. 82- 1 p. |
artikel |
58 |
New geometry in Sputtering technology
|
|
|
1974 |
13 |
2 |
p. 83- 1 p. |
artikel |
59 |
Nitride Makes its mark
|
|
|
1974 |
13 |
2 |
p. 78- 1 p. |
artikel |
60 |
No. 1 ESS Processors: How dependable have they been?
|
|
|
1974 |
13 |
2 |
p. 76- 1 p. |
artikel |
61 |
Notice
|
|
|
1974 |
13 |
2 |
p. 63- 1 p. |
artikel |
62 |
Notices and calls for papers
|
|
|
1974 |
13 |
2 |
p. 67-68 2 p. |
artikel |
63 |
On phosphorus diffusion in silicon under oxidizing atmospheres
|
|
|
1974 |
13 |
2 |
p. 81- 1 p. |
artikel |
64 |
On the effect of gate oxide thickness upon the hall mobility and other magneto-electrical characteristics in most structures
|
|
|
1974 |
13 |
2 |
p. 82- 1 p. |
artikel |
65 |
Operational behaviour of a complex system having shelf-life of the components under preemptive resume repair discipline
|
Govil, A.K. |
|
1974 |
13 |
2 |
p. 97-101 5 p. |
artikel |
66 |
Optimal reliability design of a system: A new look
|
|
|
1974 |
13 |
2 |
p. 76- 1 p. |
artikel |
67 |
Optimization of a reliability growth problem
|
Sen, P. |
|
1974 |
13 |
2 |
p. 87-89 3 p. |
artikel |
68 |
Oxygen vacancy model for the E1 ′ center in SiO2
|
|
|
1974 |
13 |
2 |
p. 81- 1 p. |
artikel |
69 |
Papers to be published in future issues
|
|
|
1974 |
13 |
2 |
p. 86- 1 p. |
artikel |
70 |
Peak temperature during turnover and the volumetric degradation of switching transistors and IC-s
|
Kemény, A.P. |
|
1974 |
13 |
2 |
p. 103-110 8 p. |
artikel |
71 |
PLAs replace ROMs for logic designs
|
|
|
1974 |
13 |
2 |
p. 78- 1 p. |
artikel |
72 |
Probabilistic analysis of a 2-unit cold-standby system with a single repair facility
|
|
|
1974 |
13 |
2 |
p. 77- 1 p. |
artikel |
73 |
Quad-linear ICs racing up the pike, paced by automotive applications
|
|
|
1974 |
13 |
2 |
p. 80- 1 p. |
artikel |
74 |
Redistribution and anisotropic diffusion of boron in (100) and (111) oriented silicon
|
|
|
1974 |
13 |
2 |
p. 80-81 2 p. |
artikel |
75 |
Relating factory test failure results to field reliability, required field maintenance, and to total life cycle costs
|
|
|
1974 |
13 |
2 |
p. 75- 1 p. |
artikel |
76 |
Reliability and maintenance aspects
|
|
|
1974 |
13 |
2 |
p. 76- 1 p. |
artikel |
77 |
Reliability of a laser communication system
|
Kamal, A.K. |
|
1974 |
13 |
2 |
p. 91-95 5 p. |
artikel |
78 |
Reliability of a Quasi-Redundant electronic system with “Standby” in the main unit
|
|
|
1974 |
13 |
2 |
p. 77- 1 p. |
artikel |
79 |
Reliability of redundant systems with dependent failures
|
|
|
1974 |
13 |
2 |
p. 76- 1 p. |
artikel |
80 |
Screening of metallization step coverage on integrated circuits
|
|
|
1974 |
13 |
2 |
p. 82- 1 p. |
artikel |
81 |
Semiconductor devices in hostile electrical environments
|
|
|
1974 |
13 |
2 |
p. 81- 1 p. |
artikel |
82 |
Semiconductor memories—an electronics revolution
|
|
|
1974 |
13 |
2 |
p. 79- 1 p. |
artikel |
83 |
Significance of strength for the reliability of selder joints in electronics
|
|
|
1974 |
13 |
2 |
p. 75- 1 p. |
artikel |
84 |
Silicon single crystals of extreme perfection
|
|
|
1974 |
13 |
2 |
p. 149- 1 p. |
artikel |
85 |
Silicon wafer processing by application of spun-on doped and undoped silica layers
|
|
|
1974 |
13 |
2 |
p. 78- 1 p. |
artikel |
86 |
Simplify minicomputer maintenance
|
|
|
1974 |
13 |
2 |
p. 76- 1 p. |
artikel |
87 |
Stand-by redundancy complex system's reliability
|
|
|
1974 |
13 |
2 |
p. 77- 1 p. |
artikel |
88 |
Stochastic behavior of a two-dissimilar-unit standby redundant system with repair maintenance
|
Nakagawa, T. |
|
1974 |
13 |
2 |
p. 143-148 6 p. |
artikel |
89 |
Surface charge and stress in the Si/SiO2 system
|
|
|
1974 |
13 |
2 |
p. 80- 1 p. |
artikel |
90 |
Testing ICs at high temperatures
|
|
|
1974 |
13 |
2 |
p. 77- 1 p. |
artikel |
91 |
The application of ion implantation to CMOS
|
|
|
1974 |
13 |
2 |
p. 84- 1 p. |
artikel |
92 |
The production of intense atomic beams
|
|
|
1974 |
13 |
2 |
p. 84- 1 p. |
artikel |
93 |
Thermal properties of amular and array geometry semiconductor devices on composite heat sinks
|
|
|
1974 |
13 |
2 |
p. 79- 1 p. |
artikel |
94 |
Thin-film laser switch
|
|
|
1974 |
13 |
2 |
p. 83- 1 p. |
artikel |
95 |
Thin-film thermoelectric transducer for measurements of low-level power between 0 and 11 GHz
|
|
|
1974 |
13 |
2 |
p. 83- 1 p. |
artikel |
96 |
Thin film vacuum equipment
|
|
|
1974 |
13 |
2 |
p. 82- 1 p. |
artikel |